CN114530532A - Prague reflector and LED with same - Google Patents
Prague reflector and LED with same Download PDFInfo
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- CN114530532A CN114530532A CN202210134791.1A CN202210134791A CN114530532A CN 114530532 A CN114530532 A CN 114530532A CN 202210134791 A CN202210134791 A CN 202210134791A CN 114530532 A CN114530532 A CN 114530532A
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- 239000010410 layer Substances 0.000 claims abstract description 346
- 239000000463 material Substances 0.000 claims abstract description 182
- 239000002131 composite material Substances 0.000 claims abstract description 173
- 239000002356 single layer Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 24
- 230000000903 blocking effect Effects 0.000 claims description 12
- 238000003892 spreading Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 9
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 230000011218 segmentation Effects 0.000 description 5
- 229910009815 Ti3O5 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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Abstract
The invention provides a Bragg reflector and a light-emitting diode with the Bragg reflector, wherein the Bragg reflector comprises a single material layer: a single layer of a low refractive index material; a first composite layer: a plurality of material groups in which high refractive index and low refractive index are alternately laminated; a second composite layer: a plurality of material groups in which high refractive index and low refractive index are alternately laminated; a third composite layer: a plurality of material groups in which high refractive index and low refractive index are alternately laminated; the thicknesses of each group of low-refractive-index materials of the first composite layer, the second composite layer and the third composite layer and the low-refractive-index materials of the single material layer are sequentially increased; the thicknesses of each group of high-refractive-index materials of the first composite layer, the second composite layer and the third composite layer are sequentially increased. According to the Bragg reflector and the light-emitting diode with the Bragg reflector, the Bragg reflector is formed by superposing four layers of high-refractive index materials and low-refractive index materials with different thicknesses, so that the Bragg reflector can reflect various light sources, and the process stability and the machine utilization rate are improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a Bragg reflector and a light-emitting diode with the Bragg reflector.
Background
A Light Emitting Diode (LED) is a solid Light Emitting device made of semiconductor material, and generally uses a combination of III-V chemical elements such as gallium phosphide, gallium arsenide, or gallium nitride, and a voltage is applied to the compound semiconductor, so that a large number of holes and electrons meet at a Light Emitting layer under the action of an electrode voltage to generate recombination, and at this time, the electrons fall to a lower energy level, and are released in a photon mode, so that electric energy is converted into Light, thereby achieving a Light Emitting effect.
Bragg reflector applied to light emitting diode chip among the prior art contains two-layerly, first layer and second floor all contain multiunit low refractive index material and high refractive index material group, in order to promote the reflectivity, the material group thickness on second floor is far greater than first layer material group thickness, bragg reflector through two-layer structure can only make the blue light that corresponds the wavelength, ruddiness, the reflectivity of one or two kinds of light types in the green glow is greater than 95%, can't realize that a section bragg reflector can reflect purple light simultaneously, the blue light, the green glow, ruddiness and white light, consequently, the bragg reflector technology of different procedures need be applied to the product of different light types, the board utilization rate is low.
Disclosure of Invention
Based on this, the present invention provides a bragg reflector and a light emitting diode having the bragg reflector, so as to solve the problem that the two-section bragg reflector in the background art cannot reflect various light types, which results in low utilization rate of the machine.
The invention provides a Bragg reflector, which comprises the following components in a stacked mode in sequence:
single material layer: a single layer of a low refractive index material;
a first composite layer: a plurality of material groups in which high refractive index and low refractive index are alternately laminated;
a second composite layer: a plurality of material groups in which high refractive index and low refractive index are alternately laminated;
a third composite layer: a plurality of material groups in which high refractive index and low refractive index are alternately laminated;
the thicknesses of each group of low-refractive-index materials of the first composite layer, the second composite layer and the third composite layer and the low-refractive-index materials of the single material layer are sequentially increased;
the thicknesses of each group of high-refractive-index materials of the first composite layer, the second composite layer and the third composite layer are sequentially increased.
Further, the single layer of the single material layer has a thickness of the single layer of the low refractive index material of
Further, the first composite layer, the second composite layer and the third composite layer each include 5 to 15 sets of materials alternately stacked with a high refractive index and a low refractive index, wherein each set of materials includes one layer of a high refractive index material and one layer of a low refractive index material.
Further, each group of high refractive index materials of the first composite layer has a thickness of
Each group of low refractive index materials has a thickness of
Further, each group of high refractive index materials of the second composite layer has a thickness of
Each group of low refractive index materials has a thickness of
Further, the firstEach group of high refractive index materials of the three composite layers has the thickness of
Each group of low refractive index materials has a thickness of
The invention also provides a light-emitting diode with a Bragg reflector, wherein the light-emitting diode is a forward-mounted light-emitting diode and comprises a substrate, an epitaxial layer, a current blocking layer, a current expanding layer, a PAD conducting layer and the Bragg reflector in any one of claims 1 to 6;
wherein, the single material layer of the Bragg reflector is positioned on one side of the substrate departing from the epitaxial layer.
The invention also provides a light emitting diode with a Bragg reflector, wherein the light emitting diode is a flip light emitting diode and comprises a substrate, an epitaxial layer, a current blocking layer, a current expanding layer, a PAD conducting layer, a PAD layer and the Bragg reflector of any one of claims 1 to 6;
wherein the Bragg reflector is arranged between the epitaxial layer and the pad layer.
The invention also provides a light-emitting diode with a Bragg reflector, wherein the light-emitting diode is a vertical light-emitting diode and comprises a PAD conducting layer, an epitaxial layer, a current blocking layer, a current expanding layer, a bonding layer, a transfer substrate and the Bragg reflector in any one of claims 1 to 6;
wherein the Bragg mirror is between the epitaxial layer and the transfer substrate.
The invention also provides a light emitting diode with a Bragg reflector, wherein the light emitting diode is a vertical flip light emitting diode and comprises a connecting electrode layer, an epitaxial layer, a current blocking layer, a current expanding layer, a PAD conducting layer, a bonding layer, a transfer substrate and the Bragg reflector of any one of claims 1 to 6;
wherein the Bragg reflector is disposed between the epitaxial layer and the transfer substrate.
Drawings
FIG. 1 is a schematic thickness diagram of a Bragg reflector according to a first embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a Bragg reflector in accordance with a first embodiment of the present invention;
FIG. 3 is a schematic spectrum diagram of a Bragg reflector at an angle of 5 ° in accordance with a first embodiment of the present invention;
FIG. 4 is a diagram showing a spectrum of a Bragg reflector at a 65 DEG angle according to a first embodiment of the present invention;
FIG. 5 is a cross-sectional view of a second embodiment of an LED of the present invention;
FIG. 6 is a cross-sectional view of a third embodiment of an LED of the present invention;
FIG. 7 is a cross-sectional view of a fourth embodiment of an LED of the present invention;
FIG. 8 is a cross-sectional view of a fifth embodiment of an LED of the present invention;
the following detailed description will further illustrate the invention in conjunction with the above-described figures.
Description of the main element symbols:
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Several embodiments of the invention are presented in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Example one
The principle of bragg mirror reflection is that fresnel reflections occur at each interface of the two materials of the bragg mirror. At the operating wavelength, the optical path difference of the reflected light at two adjacent interfaces is half a wavelength, and in addition, the sign of the reflection coefficient at the interfaces is also changed. Thus, all reflected light at the interface undergoes destructive interference, resulting in a strong reflection. The reflectivity is determined by the number of layers of material and the difference in refractive index between the materials. The reflection bandwidth is mainly determined by the refractive index difference.
Referring to fig. 2, a schematic cross-sectional view of the bragg reflector in the present embodiment is shown, which includes a bragg reflector single material layer 61, a bragg reflector first composite layer 62, a bragg reflector second composite layer 63, and a bragg reflector third composite layer 64, wherein the bragg reflector first composite layer 62 includes a first composite layer high refractive index material 621 and a first composite layer low refractive index material 622, the bragg reflector second composite layer 63 includes a second composite layer high refractive index material 631 and a second composite layer low refractive index material 632, and the bragg reflector third composite layer 64 includes a third composite layer high refractive index material 641 and a third composite layer low refractive index material 642.
As shown in fig. 1, the thicknesses of each group of low refractive index materials of the first composite layer, the second composite layer, and the third composite layer and the low refractive index material of the single material layer are sequentially increased, and the low refractive index material of the single material layer is much larger than that of the first composite layer; the thicknesses of each group of high-refractive-index materials of the first composite layer, the second composite layer and the third composite layer are sequentially increased. Through setting up the superimposed material group of high refracting index of four layers of different thickness and low refracting index material for bragg reflector can reflect multiple light source, thereby promotes technology stability and board utilization.
Fig. 3 and 4 show the spectral diagrams of the bragg reflector of the prior art and the present embodiment at a small angle of 5 ° and a large angle of 65 °; in the prior art, a two-section Bragg reflector has poor reflection effect under partial wavelength, and can only obtain better effect in reflecting one or two light types of blue light, red light and green light. The Bragg reflector with the four-layer structure in the embodiment can reflect 380-800nm light at a small angle, and can reflect 380-700nm light at a large angle, wherein the reflectivity is more than 99%; the light type such as purple light, blue light, green light, ruddiness is included in this wavelength range to the bragg reflector in this embodiment can realize purple light, blue light, green light, ruddiness product with stove operation, promotes technology stability and board utilization.
Further, the single-layer low-refractive-index material of the Bragg reflector single-material layer has the thickness of
The first composite layer, the second composite layer and the third composite layer each include 5 to 15 sets of materials in which high refractive index and low refractive index materials are alternately laminated, each set of materials including one layer of the high refractive index material and one layer of the low refractive index material. Wherein each group of high refractive index materials of the first composite layer of the Bragg reflector has a thickness of
Each group of low refractive index materials has a thickness of
Each group of high refractive index materials of the second composite layer has a thickness of
Each group of low refractive index materials has a thickness of
Each group of high refractive index materials of the third composite layer has a thickness of
Each group of low refractive index materials has a thickness of
Wherein,
according to the thickness distribution of each layer of reflector, the Bragg reflector forms a short, medium and long stress buffer structure. After the bragg reflector is heated, compared with a two-layer structure in the prior art, the deformation of the second layer material is larger than that of the first layer material, so that the top layer material is broken and falls off.
It can be understood that the insulating protective layer is made of the single material layer of the Bragg reflector in the embodiment, and the chip can be completely coated by the single material layer due to the fact that the thickness of the low-refractive-index material of the single material layer is large, so that the failure of the chip caused by the fact that external water vapor enters along cracks after the Bragg reflector is broken is avoided, and the reliability of the chip is improved. In some other optional embodiments, the bragg reflector may be applied to optoelectronic devices such as a forward structure light emitting diode, a flip structure light emitting diode, a vertical flip structure light emitting diode, and the like, so as to improve the reliability of the optoelectronic devices.
In the bragg reflector in this embodiment, the high refractive index materials are TI3O5The low refractive index materials are all SiO2。SiO2Has a refractive index of 1.47, Ti3O5Has a refractive index of 2.53. In the preparation process, PECVD (physical chemical vapor deposition) process is firstly utilizedAnd preparing a single material layer single-layer low-refractive index material of the Bragg reflector, and then sequentially preparing material groups with alternately laminated high-refractive index and low-refractive index materials of the first composite layer, the second composite layer and the third composite layer by using an electron beam evaporation process.
The preparation method comprises the following steps of S1-S4:
s1, preparing a single material layer 61 of the Bragg reflector on the surface of the light emitting diode wafer needing to be made with the Bragg reflector, wherein the single material layer is a single-layer low-refractive-index material prepared by a PECVD (physical chemical deposition) process, and the thickness of the single-layer low-refractive-index material is
The material with low refractive index is SiO2. The single-layer low-refractive-index material is prepared by a PECVD (plasma enhanced chemical vapor deposition) process, so that the material has extremely high compactness and further plays an insulation protection role on a chip.
S2, preparing the first composite layer 62 of the Bragg reflector by an electron beam evaporation process, firstly evaporating a high-refractive-index material 621 in the first group of the first composite layer, then evaporating a low-refractive-index material 622 in the first group, and then alternately evaporating 8 groups of high-refractive-index materials 621 and low-refractive-index materials 622, wherein the high-refractive-index materials in each group of the first composite layer of the Bragg reflector have the same thickness and are all the same
The low refractive index materials in each group of the Bragg reflector first composite layer have the same thickness and are all
The high refractive index material in each group of the first composite layers of the LaG reflector is Ti3O5The low refractive index materials are all SiO2。
S3, continuing to prepare the second composite layer 63 of the Bragg reflector by the electron beam evaporation process, firstly evaporating the high refractive index material 631 in the first group of the second composite layer, then evaporating the low refractive index material 632 in the first group, and then alternately evaporating 9 groups of high refractive index materials 631 and a low refractive index material 632, the high refractive index material in each group of the bragg mirror second composite layer having the same thickness
The low refractive index materials in each group of the Bragg reflector second composite layer have the same thickness and are all
The high refractive index material in each group of the second composite layers of the LaG reflector is Ti3O5The low refractive index materials are all SiO2。
S4, continuing to prepare the third composite layer 64 of the Bragg reflector by using the electron beam evaporation process, firstly evaporating the high-refractive-index material 641 in the first group of the third composite layer, then evaporating the low-refractive-index material 642 in the first group, and then alternately evaporating 8 groups of the high-refractive-index material 641 and the low-refractive-index material 642, wherein the high-refractive-index materials in each group of the third composite layer of the Bragg reflector have the same thickness and are all the same as each other
The low refractive index materials in each group of the Bragg reflector third composite layer have the same thickness and are all
The high-refractive-index material in each group of the second composite layers of the LaG reflector is Ti3O5The low refractive index materials are all SiO2。
In summary, the bragg reflector in the above embodiments of the invention includes the single material layer, the first composite layer, the second composite layer, and the third composite layer, wherein the thicknesses of each group of the low refractive index material of the first composite layer, the second composite layer, and the third composite layer and the low refractive index material of the single material layer are sequentially increased; the thicknesses of each group of high-refractive-index materials of the first composite layer, the second composite layer and the third composite layer are sequentially increased. Through setting up the superimposed bragg reflector of the high low refractive index material of four layers of different thickness, realize that whole bragg reflector can reflect multiple light source to the unable multiple light type of reflection of two segmentation bragg reflectors has solved among the background art and has leaded to the problem that the board utilization is low.
Example two
Referring to fig. 5, a cross-sectional view of a light emitting diode of the present embodiment is shown, wherein the light emitting diode of the present embodiment includes a bragg reflector in the first embodiment.
The light emitting diode in this embodiment is a forward diode, and includes a bragg reflector third composite layer 64, a bragg reflector second composite layer 63, a bragg reflector first composite layer 62, a bragg reflector single material layer 61, a substrate 71, an epitaxial layer 72, a current blocking layer 73, a current spreading layer 74, and a PAD conductive layer 75; the epitaxial layer 61 includes an N-type semiconductor layer 721, an active light emitting layer 722, and a P-type semiconductor layer 723.
The bragg reflector single material layer 61 is located on one surface of the substrate 71 departing from the active light emitting region 722 in the epitaxial layer 61, the bragg reflector first composite layer 62 is located on one surface of the bragg reflector single material layer 61 departing from the substrate 71, the bragg reflector second composite layer 63 is located on one surface of the bragg reflector first composite layer 62 departing from the bragg reflector single material layer 61, and the bragg reflector third composite layer 64 is located on one surface of the bragg reflector second composite layer 63 departing from the bragg reflector first composite layer 62.
In summary, in the light emitting diode having the bragg reflector in the above embodiments of the invention, the bragg reflector includes the single material layer, the first composite layer, the second composite layer and the third composite layer, and the thicknesses of each of the low refractive index materials of the first composite layer, the second composite layer and the third composite layer and the low refractive index material of the single material layer are sequentially increased; the thicknesses of each group of high-refractive-index materials of the first composite layer, the second composite layer and the third composite layer are sequentially increased. Through setting up the superimposed bragg reflector of the high low refractive index material of four layers of different thickness for realize that whole bragg reflector can reflect multiple light source, thereby solved two segmentation bragg reflectors and can't reflect multiple light type among the background art and lead to the problem that the board utilization is low.
EXAMPLE III
Referring to fig. 6, a cross-sectional view of the light emitting diode of the present embodiment is shown, wherein the light emitting diode of the present embodiment includes the bragg reflector in the first embodiment.
The light emitting diode in this embodiment is a flip-chip light emitting diode, and includes a substrate 71, an epitaxial layer 72, a current blocking layer 73, a current spreading layer 74, a PAD conductive layer 75, a bragg reflector single material layer 61, a bragg reflector first composite layer 62, a bragg reflector second composite layer 63, a bragg reflector third composite layer 64, and a PAD layer 81; the epitaxial layer includes an N-type semiconductor layer 721, an active light emitting layer 722, and a P-type semiconductor layer 723.
The bragg reflection layer single material layer 61, the first composite layer 62, the second composite layer 63 and the third composite layer 64 are all arranged between the active light-emitting layer 722 and the pad layer 81; the bragg reflection layer single material layer 61 is close to the active light emitting layer 722 and departs from the pad layer 81; the bragg mirror first composite layer 62 is interposed between the bragg mirror single material layer 61 and the second composite layer 63, the bragg mirror second composite layer 63 is interposed between the bragg mirror first composite layer 62 and the third composite layer 64, and the bragg mirror third composite layer 64 is interposed between the bragg mirror second composite layer 63 and other layers of the light emitting diode.
In summary, in the light emitting diode having the bragg reflector in the above embodiments of the invention, the bragg reflector includes the single material layer, the first composite layer, the second composite layer and the third composite layer, and the thicknesses of each of the low refractive index materials of the first composite layer, the second composite layer and the third composite layer and the low refractive index material of the single material layer are sequentially increased; the thicknesses of each group of high-refractive-index materials of the first composite layer, the second composite layer and the third composite layer are sequentially increased. Through setting up the superimposed bragg reflector of the high low refractive index material of four layers of different thickness for realize that whole bragg reflector can reflect multiple light source, thereby solved two segmentation bragg reflectors and can't reflect multiple light type among the background art and lead to the problem that the board utilization is low.
Example four
Referring to fig. 7, a cross-sectional view of the light emitting diode of the present embodiment is shown, wherein the light emitting diode of the present embodiment includes the bragg reflector in the first embodiment.
The light emitting diode in this embodiment is a vertical light emitting diode, and includes a PAD conductive layer 75, an epitaxial layer 72, a current blocking layer 73, a current spreading layer 74, a bragg mirror single material layer 61, a bragg mirror first composite layer 62, a bragg mirror second composite layer 63, a bragg mirror third composite layer 64, a bonding layer 91, and a transfer substrate 92, where the epitaxial layer includes an N-type semiconductor layer 721, an active light emitting layer 722, and a P-type semiconductor layer 723;
the bragg reflection layer single material layer 61, the first composite layer 62, the second composite layer 63 and the third composite layer 64 are all arranged between the active light emitting layer 722 and the transfer substrate 92; the bragg reflective layer single material layer 61 is close to the active light emitting layer 722 and away from the transfer substrate 92; the bragg mirror first composite layer 62 is interposed between the bragg mirror single material layer 61 and the second composite layer 63, the bragg mirror second composite layer 63 is interposed between the bragg mirror first composite layer 62 and the third composite layer 64, and the bragg mirror third composite layer 64 is interposed between the bragg mirror second composite layer 63 and other layers of the light emitting diode.
In summary, in the light emitting diode having the bragg reflector in the above embodiments of the invention, the bragg reflector includes the single material layer, the first composite layer, the second composite layer and the third composite layer, and the thicknesses of each of the low refractive index materials of the first composite layer, the second composite layer and the third composite layer and the low refractive index material of the single material layer are sequentially increased; the thicknesses of each group of high-refractive-index materials of the first composite layer, the second composite layer and the third composite layer are sequentially increased. Through setting up the superimposed bragg reflector of the high low refractive index material of four layers of different thickness for realize that whole bragg reflector can reflect multiple light source, thereby solved two segmentation bragg reflectors and can't reflect multiple light type among the background art and lead to the problem that the board utilization is low.
EXAMPLE five
Referring to fig. 8, a cross-sectional view of the light emitting diode of the present embodiment is shown, wherein the light emitting diode of the present embodiment includes the bragg reflector in the first embodiment.
The light emitting diode in this embodiment is a vertical flip-chip light emitting diode, and includes a connection electrode layer 101, an epitaxial layer 72, a current blocking layer 73, a current spreading layer 74, a PAD conductive layer 75, a bragg mirror single material layer 61, a bragg mirror first composite layer 62, a bragg mirror second composite layer 63, a bragg mirror third composite layer 64, a bonding layer 91, and a transfer substrate 92, where the epitaxial layer includes an N-type semiconductor layer 721, an active light emitting layer 722, and a P-type semiconductor layer 723;
the bragg reflection layer single material layer 61, the first composite layer 62, the second composite layer 63 and the third composite layer 64 are all arranged between the active light emitting layer 722 and the transfer substrate 92; the bragg reflective layer single material layer 61 is close to the active light emitting layer 722 and away from the transfer substrate 92; the bragg mirror first composite layer 62 is interposed between the bragg mirror single material layer 61 and the second composite layer 63, the bragg mirror second composite layer 63 is interposed between the bragg mirror first composite layer 62 and the third composite layer 64, and the bragg mirror third composite layer 64 is interposed between the bragg mirror second composite layer 63 and other layers of the light emitting diode.
In summary, in the light emitting diode having the bragg reflector in the above embodiments of the invention, the bragg reflector includes the single material layer, the first composite layer, the second composite layer and the third composite layer, and the thicknesses of each of the low refractive index materials of the first composite layer, the second composite layer and the third composite layer and the low refractive index material of the single material layer are sequentially increased; the thicknesses of each group of high-refractive-index materials of the first composite layer, the second composite layer and the third composite layer are sequentially increased. Through setting up the superimposed bragg reflector of the high low refractive index material of four layers of different thickness for realize that whole bragg reflector can reflect multiple light source, thereby solved two segmentation bragg reflectors and can't reflect multiple light type among the background art and lead to the problem that the board utilization is low.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A Bragg reflector comprising in sequential stacked arrangement:
single material layer: a single layer of a low refractive index material;
a first composite layer: a plurality of material groups in which high refractive indexes and low refractive indexes are alternately laminated;
a second composite layer: a plurality of material groups in which high refractive index and low refractive index are alternately laminated;
a third composite layer: a plurality of material groups in which high refractive index and low refractive index are alternately laminated;
wherein the thicknesses of each group of low refractive index materials of the first composite layer, the second composite layer and the third composite layer and the low refractive index materials of the single material layer are sequentially increased;
the thicknesses of each group of high refractive index materials of the first composite layer, the second composite layer and the third composite layer are increased in sequence.
2. A Bragg reflector according to claim 1, wherein the single layer of the single material has a single layer low refractive index material thickness of
3. A Bragg reflector according to claim 1, wherein the first, second and third composite layers each comprise 5-15 sets of alternately high and low index materials, wherein each set comprises one layer of high index material and one layer of low index material.
4. A Bragg Reflector according to claim 3 wherein each group of high refractive index materials of the first composite layer has a thickness of
Each group of low refractive index materials has a thickness of
5. A Bragg Reflector according to claim 3 wherein each group of high refractive index materials of the second composite layer has a thickness of
Each group of low refractive index materials has a thickness of
6. A Bragg Reflector according to claim 3 wherein each group of high refractive index materials of the third composite layer has a thickness of
Each group of low refractive index materials has a thickness of
7. A light emitting diode having a bragg reflector, wherein the light emitting diode is a front-mount light emitting diode, and the light emitting diode comprises a substrate, an epitaxial layer, a current blocking layer, a current spreading layer, a PAD conductive layer, and the bragg reflector of any one of claims 1 to 6; wherein the single material layer of the Bragg reflector is positioned on one side of the substrate, which is far away from the epitaxial layer.
8. A light emitting diode having a bragg reflector, wherein the light emitting diode is a flip-chip light emitting diode, the light emitting diode comprising a substrate, an epitaxial layer, a current blocking layer, a current spreading layer, a PAD conductive layer, a PAD layer, and the bragg reflector of any one of claims 1 to 6; wherein the Bragg reflector is interposed between the epitaxial layer and the pad layer.
9. A light emitting diode having a bragg reflector, wherein the light emitting diode is a vertical light emitting diode, the light emitting diode comprising a PAD conductive layer, an epitaxial layer, a current blocking layer, a current spreading layer, a bonding layer, a transfer substrate, and the bragg reflector of any one of claims 1 to 6; wherein the Bragg mirror is between the epitaxial layer and the transfer substrate.
10. A light emitting diode having a bragg reflector, wherein the light emitting diode is a vertical flip-chip light emitting diode, the light emitting diode comprising a connection electrode layer, an epitaxial layer, a current blocking layer, a current spreading layer, a PAD conductive layer, a bonding layer, a transfer substrate, and the bragg reflector of any one of claims 1 to 6; wherein the Bragg mirror is between the epitaxial layer and the transfer substrate.
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| CN202210134791.1A CN114530532A (en) | 2022-02-14 | 2022-02-14 | Prague reflector and LED with same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115411160A (en) * | 2022-11-03 | 2022-11-29 | 江西兆驰半导体有限公司 | Full-color Micro-LED chip and preparation method thereof |
| CN115425127A (en) * | 2022-11-07 | 2022-12-02 | 江西兆驰半导体有限公司 | Inverted Micro-LED chip and preparation method thereof |
| CN115472641A (en) * | 2022-11-01 | 2022-12-13 | 镭昱光电科技(苏州)有限公司 | Micro display chip and preparation method thereof |
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2022
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115472641A (en) * | 2022-11-01 | 2022-12-13 | 镭昱光电科技(苏州)有限公司 | Micro display chip and preparation method thereof |
| CN115472641B (en) * | 2022-11-01 | 2023-03-24 | 镭昱光电科技(苏州)有限公司 | Micro display chip and preparation method thereof |
| CN115411160A (en) * | 2022-11-03 | 2022-11-29 | 江西兆驰半导体有限公司 | Full-color Micro-LED chip and preparation method thereof |
| CN115425127A (en) * | 2022-11-07 | 2022-12-02 | 江西兆驰半导体有限公司 | Inverted Micro-LED chip and preparation method thereof |
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