JP5745250B2 - Light emitting device - Google Patents
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- JP5745250B2 JP5745250B2 JP2010234051A JP2010234051A JP5745250B2 JP 5745250 B2 JP5745250 B2 JP 5745250B2 JP 2010234051 A JP2010234051 A JP 2010234051A JP 2010234051 A JP2010234051 A JP 2010234051A JP 5745250 B2 JP5745250 B2 JP 5745250B2
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- 239000010410 layer Substances 0.000 claims description 103
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012790 adhesive layer Substances 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000889 atomisation Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
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Description
本発明は、発光デバイスに関し、特に分布ブラッグ反射構造（Distributed Bragg Reflector、ＤＢＲ）を有する発光デバイスに関する。 The present invention relates to a light emitting device, and more particularly to a light emitting device having a distributed Bragg reflector (DBR).
現在、発光ダイオードなどのような発光デバイスは、例えば、表示装置、交通信号装置、照明装置、医療装置および通信装置などに広く使われている。 Currently, light emitting devices such as light emitting diodes are widely used in, for example, display devices, traffic signal devices, lighting devices, medical devices, and communication devices.
図１の従来の発光デバイス１０は、導光板１１と、前記導光板１１の上に形成される接着層１３と、前記接着層１３の上に形成される金属反射層１５と、前記金属反射層１５の上に形成される透明導電層１７と、前記透明導電層１７の上に形成される半導体積層１９と、を含む。前記半導体積層１９は、前記透明導電層１７の上に形成されるＰ型窒化ガリウム層１９２と、前記Ｐ型窒化ガリウム層１９２の上に形成されるＮ型窒化ガリウム層１９６と、前記Ｐ型窒化ガリウム層１９２と前記Ｎ型窒化ガリウム層１９６との間に位置する活性層１９４と、を含む。 1 includes a light guide plate 11, an adhesive layer 13 formed on the light guide plate 11, a metal reflective layer 15 formed on the adhesive layer 13, and the metal reflective layer. 15, a transparent conductive layer 17 formed on the transparent conductive layer 17, and a semiconductor laminate 19 formed on the transparent conductive layer 17. The semiconductor stack 19 includes a P-type gallium nitride layer 192 formed on the transparent conductive layer 17, an N-type gallium nitride layer 196 formed on the P-type gallium nitride layer 192, and the P-type nitride. And an active layer 194 positioned between the gallium layer 192 and the N-type gallium nitride layer 196.
前記発光デバイス１０において、前記透明導電層１７は、直接に前記Ｐ型窒化ガリウム層１９２に接続されてオーム性接続機能を実現し、且つ前記透明導電層１７の高透過特性を通して前記金属反射層１５の高反射機能を実現することができる。 In the light emitting device 10, the transparent conductive layer 17 is directly connected to the P-type gallium nitride layer 192 to realize an ohmic connection function, and the metal reflective layer 15 is formed through the high transmission characteristics of the transparent conductive layer 17. High reflection function can be realized.
しかし、前記発光デバイス１０の製造過程において加熱工程を実施する必要があるので、前記透明導電層１７と前記金属反射層１５との間にディフュージョン現象（Diffusion）が生じる可能性がある。即ち、前記発光デバイス１０を製造する過程に前記金属反射層１５の表面に霧化現象が生じる可能性がある。従って、前記金属反射層１５の反射率が悪くなり、前記発光デバイス１０の発光効率に影響を与える。 However, since it is necessary to perform a heating process in the manufacturing process of the light emitting device 10, a diffusion phenomenon may occur between the transparent conductive layer 17 and the metal reflective layer 15. That is, an atomization phenomenon may occur on the surface of the metal reflection layer 15 in the process of manufacturing the light emitting device 10. Therefore, the reflectance of the metal reflective layer 15 is deteriorated, which affects the light emission efficiency of the light emitting device 10.
発光デバイス１０の製造過程に反射構造の反射率が低くなる問題は、解決すべき問題になっている。 The problem that the reflectance of the reflecting structure is lowered during the manufacturing process of the light emitting device 10 is a problem to be solved.
本発明の主な目的は、発光効率を向上させることができる発光デバイスを提供することにある。 A main object of the present invention is to provide a light emitting device capable of improving luminous efficiency.
上記課題を解決するために本発明では、導電基板と、金属反射層と、異なる屈折率を有する二種或いは二種以上の材料が順に積層して形成される積層膜構造と、透明導電層と、半導体積層と、を含む発光デバイスを提供する。前記金属反射層は、前記導電基板の上に形成されている。前記積層膜構造は、前記金属反射層の上に形成されている。前記積層膜構造は、絶縁層と、積層膜構造を貫通して形成される少なくとも１つの穴構造とを含む。前記透明導電層は、前記前記積層膜構造の上に形成され、前記半導体積層は、前記積層膜構造の上に形成されている。 In order to solve the above problems, in the present invention, a conductive substrate, a metal reflective layer, a laminated film structure formed by sequentially laminating two or more materials having different refractive indexes, a transparent conductive layer, And a semiconductor stack. The metal reflective layer is formed on the conductive substrate. The laminated film structure is formed on the metal reflective layer. The laminated film structure includes an insulating layer and at least one hole structure formed through the laminated film structure. The transparent conductive layer is formed on the stacked film structure, and the semiconductor stack is formed on the stacked film structure.
上記課題を解決するために本発明では、導電基板と、金属反射層と、異なる屈折率を有する二種或いは二種以上の材料が順に積層して形成される積層膜構造と、透明導電層と、半導体積層とを含む発光デバイスを提供する。前記積層膜構造は、前記金属反射層の上に形成され、少なくともTiO2が混入されている導電材料で製造する。前記透明導電層は、前記積層膜構造の上に形成され、前記半導体積層は、前記透明導電層の上に形成されている。 In order to solve the above problems, in the present invention, a conductive substrate, a metal reflective layer, a laminated film structure formed by sequentially laminating two or more materials having different refractive indexes, a transparent conductive layer, A light emitting device including a semiconductor stack is provided. The laminated film structure is made of a conductive material formed on the metal reflective layer and mixed with at least TiO2. The transparent conductive layer is formed on the stacked film structure, and the semiconductor stack is formed on the transparent conductive layer.
上述したように、本発明の発光デバイスは、異なる屈折率を有する二種或いは二種以上の材料が順に積層される積層膜構造を通して光線を反射する。前記積層膜構造は、金属反射層と透明導電層を分離させるので、加熱工程により両者の間にディフュージョン現象（Diffusion）が生じ、金属反射層の表面に霧化現象が生じることを防ぐことができる。即ち、金属反射層の表面が霧化されることを防げるために、前記金属反射層の反射率が悪くなることを防ぎ、前記発光デバイスの発光効率を向上させることができる。 As described above, the light-emitting device of the present invention reflects light rays through a laminated film structure in which two or more materials having different refractive indexes are sequentially laminated. Since the laminated film structure separates the metal reflective layer and the transparent conductive layer, it is possible to prevent a diffusion phenomenon (Diffusion) between the two due to the heating process and an atomization phenomenon to occur on the surface of the metal reflective layer. . That is, since the surface of the metal reflection layer can be prevented from being atomized, the reflectance of the metal reflection layer can be prevented from being deteriorated, and the light emission efficiency of the light emitting device can be improved.
図２は、本発明の第一実施形態に係る発光デバイスを示す。図２の発光デバイス３０は、導電基板３１と、金属反射層３３と、異なる屈折率を有する二種或いは二種以上の材料が順に積層して形成される積層膜構造３５と、透明導電層３７と、半導体積層３９と、穴構造３５２と、電極４１と、を含む。 FIG. 2 shows a light emitting device according to the first embodiment of the present invention. The light emitting device 30 of FIG. 2 includes a conductive substrate 31, a metal reflective layer 33, a laminated film structure 35 formed by sequentially laminating two or more materials having different refractive indexes, and a transparent conductive layer 37. A semiconductor stack 39, a hole structure 352, and an electrode 41.
図２に示すように、前記発光デバイス３０は、垂直式発光ダイオードである。前記金属反射層３３は、前記導電基板３１の上に形成され、前記積層膜構造３５は、前記金属反射層３３の上に形成され、前記透明導電層３７は、前記積層膜構造３５の上に形成され、前記半導体積層３９は、前記透明導電層３７の上に形成され、前記電極４１は、前記半導体積層３９の上に形成されている。前記積層膜構造３５は、Ta2O5、SiNx、TiO2或いはSiO2から構成される少なくとも１つの絶縁層を含む。前記積層膜構造３５には、前記金属反射層３３と前記透明導電層３７との間の電気接続を実現するための穴構造３５２が形成されている。前記穴構造３５２は、積層膜構造３５を貫通して形成される穴構である。 As shown in FIG. 2, the light emitting device 30 is a vertical light emitting diode. The metal reflective layer 33 is formed on the conductive substrate 31, the laminated film structure 35 is formed on the metal reflective layer 33, and the transparent conductive layer 37 is formed on the laminated film structure 35. The semiconductor stack 39 is formed on the transparent conductive layer 37, and the electrode 41 is formed on the semiconductor stack 39. The laminated film structure 35 includes at least one insulating layer made of Ta 2 O 5 , SiNx, TiO 2, or SiO 2 . The laminated film structure 35 is provided with a hole structure 352 for realizing electrical connection between the metal reflective layer 33 and the transparent conductive layer 37. The hole structure 352 is a hole structure formed through the laminated film structure 35.
図２の実施形態において１つの穴構造３５２が形成されているが、他の実施形態で需要に従って複数の穴構造を形成してもよい。または、前記穴構造３５２を形成する材料として銀、アルミニウム、金或いはその合金などの高光反射材料を使って発光デバイス３０の光反射率を高くするか、チタン、アルミニウム、クロミウム或いはその合金などの高光反射材料を使って発光デバイス３０の強度を高くすることもできる。 Although one hole structure 352 is formed in the embodiment of FIG. 2, other hole structures may be formed according to demand in other embodiments. Alternatively, a high light reflection material such as silver, aluminum, gold, or an alloy thereof is used as a material for forming the hole structure 352, and the light reflectance of the light emitting device 30 is increased, or high light such as titanium, aluminum, chromium, or an alloy thereof is used. The intensity of the light emitting device 30 can be increased by using a reflective material.
前記積層膜構造３５は、Ta2O5、SiNx、TiO2或いはSiO2などから構成される複数な絶縁材料を積層させて製造することができる。本発明では、TiO2とSiO2を積層させて積層膜構造３５を製造する。 The laminated film structure 35 can be manufactured by laminating a plurality of insulating materials composed of Ta 2 O 5 , SiNx, TiO 2 or SiO 2 . In the present invention, the laminated film structure 35 is manufactured by laminating TiO 2 and SiO 2 .
異なる屈折率を有する二種或いは二種以上の材料を順に積層させて得る積層膜構造３５は、通常異なる屈折率を有する二種の材料を順に積層させて得る積層膜構造３５を言う。本発明の積層膜構造３５は、一層厚がλ/4である分布ブラッグ反射構造（Distributed Bragg Reflector、ＤＢＲ）である。前記λは、前記発光デバイス３０の主波長（dominant wavelength）である。 A laminated film structure 35 obtained by sequentially laminating two or more materials having different refractive indexes refers to a laminated film structure 35 obtained by sequentially laminating two kinds of materials having different refractive indexes. The laminated film structure 35 of the present invention is a distributed Bragg reflector (DBR) having a thickness of λ / 4. The λ is a dominant wavelength of the light emitting device 30.
前記半導体積層３９の材料として、窒化アルミニウムインジウムガリウム（AlInGaN）類或いはアルミニウムガリウムインジウムリン（AlGaInP）を使うことができる。前記半導体積層３９は、第一導電型半導体積層３９２と、活性層３９４と、第二導電型半導体積層３９６と、を含む。前記第一導電型半導体積層３９２は、前記透明導電層３７の上に形成され、前記活性層３９４は、前記第一導電型半導体積層３９２の上に形成され、前記第二導電型半導体積層３９６は、前記活性層３９４の上に形成されている。 As a material for the semiconductor stack 39, aluminum indium gallium nitride (AlInGaN) or aluminum gallium indium phosphide (AlGaInP) can be used. The semiconductor stack 39 includes a first conductive semiconductor stack 392, an active layer 394, and a second conductive semiconductor stack 396. The first conductive semiconductor stack 392 is formed on the transparent conductive layer 37, the active layer 394 is formed on the first conductive semiconductor stack 392, and the second conductive semiconductor stack 396 is , Formed on the active layer 394.
前記活性層３９４は、歪多重量子井戸（multi-quantum well、MQW）構造に形成されている。前記第一導電型半導体積層３９２は、P型半導体層構造に形成され、前記第二導電型半導体積層３９６は、N型半導体層構造に形成されている。即ち、前記第一導電型半導体積層３９２は、P型窒化アルミニウムインジウムガリウム層に形成され、前記第二導電型半導体積層３９６は、N型窒化アルミニウムインジウムガリウム層に形成されている The active layer 394 is formed in a strained multi-quantum well (MQW) structure. The first conductive semiconductor stack 392 is formed in a P-type semiconductor layer structure, and the second conductive semiconductor stack 396 is formed in an N-type semiconductor layer structure. That is, the first conductive semiconductor stack 392 is formed on a P-type aluminum indium gallium nitride layer, and the second conductive semiconductor stack 396 is formed on an N-type aluminum indium gallium nitride layer.
前記半導体積層３９の表面は、粗い面に形成されている。これにより前記活性層で生じる光線が半導体層３９と外部環境の屈折率の差異によって生じる全反射の現象を減らし、発光デバイス３０の出光率を高くすることができる。 The surface of the semiconductor laminate 39 is formed on a rough surface. Thereby, the phenomenon of total reflection caused by the difference in refractive index between the semiconductor layer 39 and the external environment caused by the light rays generated in the active layer can be reduced, and the light emission rate of the light emitting device 30 can be increased.
前記透明導電層３７の材料として、透明な酸化金属材料を使うことができる。例えば、ITO、CTO、ZnO、In2O3、SnO2、CuAlO2、CuGaO2、SrCu2O2などを使うことができる。本実施形態では、ITOを選んで使う。 A transparent metal oxide material can be used as the material of the transparent conductive layer 37. For example, ITO, CTO, ZnO, In 2 O 3 , SnO 2 , CuAlO 2 , CuGaO 2 , SrCu 2 O 2 and the like can be used. In this embodiment, ITO is selected and used.
前記導電基板３１の材料として、酸化亜鉛、シリコン或いは金属などを使うことができる。前記導電基板３１の下表面に裏面電極（Back Electrode）３１２を形成してもよい。 As the material of the conductive substrate 31, zinc oxide, silicon, metal, or the like can be used. A back electrode 312 may be formed on the lower surface of the conductive substrate 31.
前記金属反射層３３の表面を接着層に形成して、前記導電基板３１と積層膜構造３５を金属反射層３３の両面に接着させることができる。前記金属反射層３３は、高光反射性を有する金属で製造する。例えば、銀、アルミニウム、金或いはその合金などの材料を使うことができる。且つ、金属共晶接合（Eutectic bonding）技術により金属反射層３３に接着層を形成することもできる。 The surface of the metal reflection layer 33 can be formed as an adhesive layer, and the conductive substrate 31 and the laminated film structure 35 can be bonded to both surfaces of the metal reflection layer 33. The metal reflective layer 33 is made of a metal having high light reflectivity. For example, a material such as silver, aluminum, gold, or an alloy thereof can be used. In addition, an adhesive layer can be formed on the metal reflective layer 33 by a metal eutectic bonding technique.
図３は、本発明の第二実施形態に係る発光デバイスの図である。図３の実施形態において、金属反射層３３と導電基板３１との間に接着層３４がさらに形成されている。前記接着層３４は、金属反射層３３と導電基板３１との間の接着力を高くする。前記接着層３４の材料として、金属或いは導電粒子を含む有機材料を使うことができる。 FIG. 3 is a diagram of a light emitting device according to the second embodiment of the present invention. In the embodiment of FIG. 3, an adhesive layer 34 is further formed between the metal reflective layer 33 and the conductive substrate 31. The adhesive layer 34 increases the adhesive force between the metal reflective layer 33 and the conductive substrate 31. As the material of the adhesive layer 34, an organic material containing metal or conductive particles can be used.
上述したように、本発明の発光デバイスは、異なる屈折率を有する二種或いは二種以上の材料が順に積層される積層膜構造を通して金属反射層と透明導電層を分離させる。従って、透明導電層と金属反射層との間に加熱工程によりディフュージョン現象（Diffusion）が生じ、金属反射層の表面に霧化現象が生じることを防ぐことができる。従って、前記発光デバイスの発光効率を改善することができる。 As described above, the light emitting device of the present invention separates the metal reflective layer and the transparent conductive layer through the laminated film structure in which two or more materials having different refractive indexes are sequentially laminated. Therefore, it is possible to prevent a diffusion phenomenon (Diffusion) from occurring between the transparent conductive layer and the metal reflective layer due to the heating process, and an atomization phenomenon to occur on the surface of the metal reflective layer. Accordingly, the light emission efficiency of the light emitting device can be improved.
前記積層膜構造３５が前記金属反射層３３と前記透明導電層３７との間に形成されているので、透明導電層３７と金属反射層３３との間に加熱工程によりディフュージョン現象が生じ、金属反射層３３の表面が霧化されることを防ぐことができる。従って、前記金属反射層３３の反射率に影響を与えることなく、発光デバイス３０の発光効率を改善することができる。また、積層膜構造３５と金属反射層３３により所定方向性の反射鏡を形成することができるので、発光デバイス３０の設計を容易にすることができる。 Since the laminated film structure 35 is formed between the metal reflective layer 33 and the transparent conductive layer 37, a diffusion phenomenon occurs between the transparent conductive layer 37 and the metal reflective layer 33 due to a heating process, and the metal reflection It is possible to prevent the surface of the layer 33 from being atomized. Therefore, the luminous efficiency of the light emitting device 30 can be improved without affecting the reflectance of the metal reflective layer 33. Moreover, since the reflecting mirror having a predetermined direction can be formed by the laminated film structure 35 and the metal reflecting layer 33, the design of the light emitting device 30 can be facilitated.
図４は、本発明の第三実施形態に係る発光デバイス５０を示す図である。前記発光デバイス５０と上述した発光デバイス３０が異なる所は、積層膜構造５５を導電性材料で製造したことである。前記積層膜構造５５を製造する導電性材料として、ITO、CTO、ZnO、In2O3、SnO2、CuAlO2、CuGaO2或いはSrCu2O2などを使うことができる。前記積層膜構造５５を導電材料で製造したので、前記積層膜構造５５により金属反射層３３と透明導電層３７を導電接続させることができる。 FIG. 4 is a diagram showing a light emitting device 50 according to the third embodiment of the present invention. The difference between the light emitting device 50 and the light emitting device 30 described above is that the laminated film structure 55 is made of a conductive material. ITO, CTO, ZnO, In 2 O 3 , SnO 2 , CuAlO 2 , CuGaO 2, SrCu 2 O 2 or the like can be used as the conductive material for manufacturing the laminated film structure 55. Since the laminated film structure 55 is made of a conductive material, the metal reflective layer 33 and the transparent conductive layer 37 can be conductively connected by the laminated film structure 55.
本実施形態の積層膜構造５５は、少なくともTiO2が混入される材料を含んでいる。本実施形態のTiO2が混入されている材料は、TixTa1-xO2或いはTixNb1-xO2である。即ち、本実施形態の積層膜構造５５は、Ti x Ta 1-x O 2 或いはTi x Nb 1-x O 2 と、ITOとが順に積層して形成されるものである。 The laminated film structure 55 of this embodiment includes at least a material mixed with TiO 2 . The material mixed with TiO 2 of this embodiment is Ti x Ta 1-x O 2 or Ti x Nb 1-x O 2 . That is, the laminated film structure 55 of the present embodiment is formed by sequentially laminating Ti x Ta 1-x O 2 or Ti x Nb 1-x O 2 and ITO.
本実施形態の発光デバイス５０は、積層膜構造５５を貫通して形成されて金属反射層３３と透明導電層３７との間の電気接続状態を向上させる少なくとも１つの穴構造（図に示しない）を含むことができる。且つ、前記穴構造を形成する材料として銀、アルミニウム、金或いはその合金などの高光反射材料を使って発光デバイス５０の光反射率を高くするか、チタン、アルミニウム、クロミウム或いはその合金などの高光反射材料を使って穴構造の強度を高くすることもできる。 The light emitting device 50 of the present embodiment is formed through the laminated film structure 55 and has at least one hole structure (not shown) that improves the electrical connection between the metal reflective layer 33 and the transparent conductive layer 37. Can be included. In addition, a high light reflection material such as silver, aluminum, gold, or an alloy thereof is used as a material for forming the hole structure to increase the light reflectance of the light emitting device 50, or a high light reflection such as titanium, aluminum, chromium, or an alloy thereof. It is also possible to increase the strength of the hole structure using materials.
図５は、本発明の第四実施形態に係る発光デバイス５０を示す図である。図３の実施形態において、金属反射層３３と導電基板３１との間に接着層５４がさらに形成されている。前記接着層５４は、金属反射層３３と導電基板３１との間の接着力を高くする。前記接着層５４の材料として、金属材料或いは導電粒子を含む有機材料を使うことができる。 FIG. 5 is a diagram showing a light emitting device 50 according to the fourth embodiment of the present invention. In the embodiment of FIG. 3, an adhesive layer 54 is further formed between the metal reflective layer 33 and the conductive substrate 31. The adhesive layer 54 increases the adhesive force between the metal reflective layer 33 and the conductive substrate 31. As the material of the adhesive layer 54, a metal material or an organic material containing conductive particles can be used.
上述したように、本発明の発光デバイスは、異なる屈折率を有する二種或いは二種以上の材料が順に積層される積層膜構造を介して金属反射層と透明導電層を分離させる。従って、加熱工程により透明導電層と金属反射層との間にディフュージョン現象（Diffusion）が生じ、金属反射層の表面に霧化現象が生じることを防ぐことができる。金属反射層の表面が霧化されることを防げるために、前記金属反射層３３の反射率が悪くなることを防ぎ、前記発光デバイスの発光効率を向上させることができる。また、積層膜構造と金属反射層により所定方向性の反射鏡を形成することができるので、発光デバイスの設計を容易にすることができる。 As described above, the light-emitting device of the present invention separates the metal reflective layer and the transparent conductive layer through the laminated film structure in which two or more materials having different refractive indexes are sequentially laminated. Therefore, it is possible to prevent a diffusion phenomenon (Diffusion) from occurring between the transparent conductive layer and the metal reflective layer due to the heating process, and an atomization phenomenon to occur on the surface of the metal reflective layer. In order to prevent the surface of the metal reflection layer from being atomized, the reflectance of the metal reflection layer 33 can be prevented from being deteriorated, and the light emission efficiency of the light emitting device can be improved. In addition, since the reflecting mirror having a predetermined direction can be formed by the laminated film structure and the metal reflecting layer, the design of the light emitting device can be facilitated.
３０、５０ 発光デバイス
３１ 導電基板
３１２ 裏面電極
３３ 金属反射層
３４、５４ 接着層
３５、５５ 積層膜構造
３５２ 穴構造
３７ 透明導電層
３９ 半導体積層
３９２ 第一導電型半導体積層
３９４ 活性層
３９６ 第二導電型半導体積層
４１ 電極
30, 50 Light emitting device 31 Conductive substrate 312 Back electrode 33 Metal reflective layer 34, 54 Adhesive layer 35, 55 Laminated film structure 352 Hole structure 37 Transparent conductive layer 39 Semiconductor laminated layer 392 First conductive type semiconductor laminated layer 394 Active layer 396 Second conductive layer Type semiconductor laminate 41 electrode
Claims (6)
前記導電基板の上に形成される金属反射層と、
異なる屈折率を有する材料が前記金属反射層の上に順に積層されて形成される積層膜構造であって、Ti x Ta 1-x O 2 或いはTi x Nb 1-x O 2 と、ITOが順に積層されて構成される積層膜構造と、
前記積層膜構造の上に形成され、ITOを含む透明導電層と、
前記透明導電層の上に形成される半導体積層と、を含むことを特徴とする発光デバイス。 A conductive substrate;
A metal reflective layer formed on the conductive substrate;
A multilayer film structure material having a different refractive index Ru is formed by laminating in this order on the metal reflective layer, a Ti x Ta 1-x O 2 or Ti x Nb 1-x O 2 , ITO is sequentially A laminated film structure constituted by being laminated;
A transparent conductive layer formed on the laminated film structure and containing ITO;
A light emitting device comprising: a semiconductor laminate formed on the transparent conductive layer.
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