TWI811725B - Light-emitting device - Google Patents

Abstract

A light-emitting device comprises sequentially in a stacking order a supporting substrate, a metal reflecting layer, a transparent conductive non-oxide layer, a transparent conductive oxide layer, a first conductivity-type semiconductor layer, a semiconductor active structure and a second conductivity-type semiconductor layer. The first conductivity-type semiconductor layer has a first work function. The metal reflecting layer has a second work function. The transparent conductive oxide layer has a third work function smaller than the first work function. The transparent conductive non-oxide layer has a fourth work function smaller than the first work function wherein a difference between the third work function and the fourth work function is smaller than 0.5 eV.

Description

Light emitting element

The present invention relates to a light-emitting element, and in particular to a light-emitting element having a reflective layer.

The luminous efficiency of the light-emitting element depends on the internal quantum efficiency (Internal Quantum Efficiency; IQE) and the light extraction efficiency (Light Extraction Efficiency; LEE). Light-emitting elements usually contain metal reflective layers to improve light extraction efficiency. The present disclosure proposes a novel light-emitting element to improve the reliability of the metal reflective layer in the light-emitting element and thereby improve the reliability of the light-emitting element.

The present disclosure provides a light-emitting element, which includes a supporting substrate, a metal reflective layer, a transparent non-oxide conductive layer, a transparent oxide conductive layer, and a semiconductor stack. The semiconductor stack is disposed on the supporting substrate and includes a first conductive type semiconductor layer, a second conductive type semiconductor layer and a semiconductor active structure located on the first conductive type semiconductor layer and the second conductive type semiconductor layer. The semiconductor layers are used to emit light, wherein the first conductive type semiconductor layer has a first work function. The metal reflective layer is disposed between the first conductive semiconductor layer and the supporting substrate and has a second work function. The transparent oxide conductive layer is disposed between the first conductive type semiconductor layer and the metal reflective layer, and has a third work function smaller than the first work function. The transparent non-oxide conductive layer is disposed between the transparent oxide conductive layer and the metal reflective layer, and has a fourth work function smaller than the first work function, wherein the third work function is smaller than the first work function. The difference between the three work functions and the fourth work function is less than 0.5 eV.

The following description will describe exemplary embodiments of the present invention in detail with reference to the drawings, so that those skilled in the art can fully understand the spirit of the present invention. The present invention is not limited to the following embodiments, but can be implemented in other forms.

Please refer to the first and second figures. The first figure is a schematic top view showing a light-emitting element 10 according to an embodiment of the present disclosure; the second figure is a schematic cross-sectional view along the section line AA' of the first figure. . The light-emitting element 10 includes a support substrate 100, a metal reflective layer 103, a transparent non-oxide conductive layer 104, a transparent oxide conductive layer 105, a patterned electrical insulating layer 106, a first electrode layer 108, and an insulating protective layer 109. The support substrate 100 includes an upper surface 100s, in which a horizontal direction X is parallel to the upper surface 100s and a vertical direction Y is perpendicular to the upper surface 100s. The semiconductor stack 107 is disposed on the upper surface 100s of the supporting substrate 100 and includes a first conductive type semiconductor layer 107a, a second conductive type semiconductor layer 107c, and a semiconductor active structure 107b located on the first conductive type semiconductor layer 107a and the second conductive type semiconductor. The space between the layers 107c is used to emit a light, wherein the first conductive type semiconductor layer 107a is closer to the supporting substrate 100 than the second conductive type semiconductor layer 107c. In one embodiment, the surface of the second conductive semiconductor layer 107c away from the semiconductor active structure 107b includes a roughened surface to increase light extraction efficiency, wherein the roughened surface includes regular concave and convex patterns or irregular or random patterns. Distribution pattern.

In the vertical direction Y, as shown in the second figure, the metal reflective layer 103 is disposed between the first conductive type semiconductor layer 107a and the supporting substrate 100; the transparent oxide conductive layer 105 is disposed between the first conductive type semiconductor layer 107a and the metal between the reflective layers 103; the transparent non-oxide conductive layer 104 is disposed between the transparent oxide conductive layer 105 and the metal reflective layer 103. Among them, the first conductive semiconductor layer 107a has a first work function WF1, the metal reflective layer 103 has a second work function WF2; the transparent oxide conductive layer 105 has a third work function WF3, and the transparent non-oxide conductive layer 104 has a fourth work function WF3. The work function WF4 is, the third work function WF3 is smaller than the first work function WF1, and the fourth work function WF4 is smaller than the first work function WF1. In one embodiment, the difference between the third work function WF3 and the fourth work function WF4 is less than 0.5 eV. For example, the difference between the third work function WF3 and the fourth work function WF4 is less than 0.2 eV, so that the transparent oxide conductive layer 105 and the transparent non-conductive layer 105 The oxide conductive layer 104 forms a good electrical contact interface. In one embodiment, the difference between the second work function WF2 and the fourth work function WF4 is less than 0.5 eV. For example, the difference between the second work function WF2 and the fourth work function WF4 is less than 0.2 eV, so that the metal reflective layer 103 and the transparent non-oxide The conductive layer 104 forms a good electrical contact interface. Through the above structure, the light-emitting element 10 can obtain stable electrical properties without going through a high-temperature alloy process, which can reduce the thermal budget required for the manufacturing process of the light-emitting element 10 and improve the performance of the semiconductor stack 107 . crystal quality.

In one embodiment, in the vertical direction Y, as shown in the second figure, the transparent oxide conductive layer 105 is directly connected to the transparent non-oxide conductive layer 104 and the transparent non-oxide conductive layer 104 is directly connected to the metal reflective layer 103 . Among them, the first conductive type semiconductor layer 107a is directly connected to the transparent oxide conductive layer 105. Among them, the transparent non-oxide conductive layer 104 completely separates the transparent oxide conductive layer 105 and the metal reflective layer 103 to avoid the formation reaction between the constituent elements of the metal reflective layer 103 and the constituent elements of the transparent oxide conductive layer 105, such as oxygen, thereby reducing the metal reflection. The reflectivity and/or conductive properties of layer 103. In one embodiment, the transparent oxide conductive layer 105 does not cover the boundary of the light-emitting element 10 and is separated from the boundary of the light-emitting element 10 by a gap. Therefore, the transparent non-oxide conductive layer 104 completely covers under the transparent oxide conductive layer 105 The surface and sides are separated from the boundary of the light-emitting element 10 by a gap. In one embodiment, the metal reflective layer 103 completely covers the lower surface and sides of the transparent non-oxide conductive layer 104 . In one embodiment, the outer boundary of the transparent non-oxide conductive layer 104 is aligned with the outer boundary of the metal reflective layer 103 . Relative to the light emitted by the semiconductor active structure 107b, the transparent oxide conductive layer 105 and the transparent non-oxide conductive layer 104 have a light transmittance greater than 70%, for example. The thickness of the transparent non-oxide conductive layer 104 ranges from 10 angstroms to 100 angstroms, for example. In one embodiment, as described above, by selecting suitable work function materials for the transparent oxide conductive layer 105, the transparent non-oxide conductive layer 104, and the metal reflective layer 103, a good electrical contact interface is formed at their interfaces. In one embodiment, by selecting a suitable thickness of the transparent non-oxide conductive layer 104, there is a gap between the transparent oxide conductive layer 105 and the transparent non-oxide conductive layer 104, and/or between the transparent non-oxide conductive layer 104 and the metal. A good electrical contact interface is formed between the reflective layers 103 through the tunneling effect. If the thickness of the transparent non-oxide conductive layer 104 is too thick, for example, greater than 100 Angstroms, it may cause the light transmittance to decrease and affect the luminous efficiency, and it is not conducive to the tunneling effect of electrons in the transparent non-oxide conductive layer 104 during conduction. This further affects the conductivity of the light-emitting element 10 . The transparent oxide conductive layer 105 has a refractive index smaller than the refractive index of the first conductive type semiconductor layer 107a, and the transparent non-oxide conductive layer 104 has a refractive index smaller than the refractive index of the transparent oxide conductive layer 105, so that the first conductive type semiconductor The layer 107a, the transparent oxide conductive layer 105 and the transparent non-oxide conductive layer 104 form a gradient refractive index structure, which is beneficial to improving the extraction efficiency of light emitted downwardly by the semiconductor active structure 107b. Relative to the light emitted by the semiconductor active structure 107b, the metal reflective layer 103 has a reflectivity of, for example, greater than 90%.

The first electrode layer 108 is located on the second conductive semiconductor layer 107c such that the second conductive semiconductor layer 107c is located between the semiconductor active structure 107b and the first electrode layer 108. As shown in the first figure, the first electrode layer 108 includes a first base portion 108a and a first extension portion 108b extending from the first base portion 108a in a direction away from the first base portion 108a, wherein the width of the first extension portion 108b is smaller than the first extension portion 108b. The width of base 108a. The first base portion 108a serves, for example, as a soldering pad for connecting to external components, such as a packaging carrier or a circuit board, through package wires; the first extension portion 108b, for example, includes a plurality of extended electrodes for evenly distributing current to the light-emitting element 10 . In one embodiment, as shown in the first figure, the light-emitting element 10 has a first side L1 and a second side L2 opposite the first side L1, the first base 108a of the first electrode layer 108 is located on the first side L1, and the first extension The portion 108b includes a first extension electrode 108b1 that extends continuously from the first base portion 108a outward along the four boundaries of the light-emitting element 10; the first extension portion 108b further includes a second extension electrode 108b2 that extends from the first base portion 108a toward the second side L2. Extend, wherein the second extended electrode 108b2 intersects the first extended electrode 108b1 at the second side L2 and the second extended electrode 108b2 is surrounded by the first extended electrode 108b1. In one embodiment, the first base portion 108a and the first extension portion 108b are integrally formed and include the same material. In one embodiment, the first extended electrode 108b1 and the second extended electrode 108b2 are integrally formed and include the same material. In one embodiment, the first extended electrode 108b1 and the second extended electrode 108b2 have the same width, for example, 1 to 10 microns.

The patterned electrically insulating layer 106 is formed between the first conductive type semiconductor layer 107a and the transparent oxide conductive layer 105; relative to the light emitted by the semiconductor active structure 107b, the patterned electrically insulating layer 106 has, for example, greater than 70% of light penetration. The transmittance and the refractive index are smaller than the refractive index of the first conductive type semiconductor layer 107a. In the vertical direction Y, as shown in the second figure, the patterned electrical insulating layer 106 and the first electrode layer 108 are respectively located on two opposite sides of the semiconductor stack 107, wherein the patterned electrical insulating layer 106 is larger than the first electrode. The layer 108 is adjacent to the first conductive type semiconductor layer 107a; the first electrode layer 108 is adjacent to the second conductive type semiconductor layer 107c than the patterned electrical insulating layer 106. As shown in the first figure, the patterned electrical insulation layer 106 and the first electrode layer 108 have substantially the same pattern outline and substantially overlap each other in the vertical direction Y. The patterned electrical insulation layer 106 includes a second base portion 106a and a second extension portion 106b extending from the second base portion 106a in a direction away from the second base portion 106a, wherein the width of the second extension portion 106b is smaller than the width of the second base portion 106a. In the vertical direction Y, as shown in the second figure, the patterned electrical insulating layer 106 serves as a current blocking layer and is located directly below the first electrode layer 108 to reduce current flow through the semiconductor directly below the first electrode layer 108 The active structure 107b prevents the light emitted by the semiconductor active structure 107b directly below the first electrode layer 108 from being absorbed by the first electrode layer 108 to reduce the luminous efficiency. In one embodiment, as shown in the first figure, the second base 106a of the patterned electrical insulation layer 106 corresponds to the first base 108a of the first electrode layer 108 and is located directly below the first side L1 and the first base 108a. . In one embodiment, as shown in the first and second figures, the second base 106a is completely located within the area of the first base 108a in the vertical direction Y, and the width of the second base 106a is smaller than the width of the first base 108a. In one embodiment, the first base 108a is completely located within the area of the second base 106a in the vertical direction Y, and the width of the first base 108a is smaller than the width of the second base 106a. The second extension part 106b includes a first extension part 106b1 extending continuously from the second base part 106a outward along the four boundaries of the light-emitting element 10; the second extension part 106b further includes a second extension part 106b2 from the second base part 106a. Extending toward the second side L2, the second extension part 106b2 intersects the first extension part 106b1 at the second side L2 and the second extension part 106b2 is surrounded by the first extension part 106b1. In one embodiment, the second base portion 106a and the second extension portion 106b are integrally formed and include the same material. In one embodiment, the first extension part 106b1 and the second extension part 106b2 are integrally formed and contain the same material. In one embodiment, the width of the first extension part 106b1 is larger than the width of the second extension part 106b2. For example, the width of the first extension part 106b1 is 30~45 microns; the width of the second extension part 106b2 is is 2~17 microns. In one embodiment, the width of the first extended portion 106b1 is greater than the width of the first extended electrode 108b1; the width of the second extended portion 106b2 is greater than the width of the second extended electrode 108b2. In one embodiment, the width of the first extending portion 106b1 is greater than the width of the first extending electrode 108b1; the width of the second extending portion 106b2 is less than the width of the second extending electrode 108b2. Specifically, as shown in the first and second figures, the first base 108a includes a first region R1 overlapping the second base 106a and a second region R2 not overlapping the second base 106a, wherein the first region R1 is larger than The second area R2; the second area R2 surrounds the first area R1. In a cross-section of the light-emitting element 10, as shown in the second figure, the width of the first region R1 is greater than the width of the second region R2. The first extended electrode 108b1 includes a third region R3 overlapping the first extending portion 106b1 and a fourth region R4 not overlapping the first extending portion 106b1, wherein the third region R3 is larger than the fourth region R4; the third region R3 surrounds the first extending portion 106b1. Four regions R4; the width of the third region R3 is greater than the width of the fourth region R4. The first extension part 106b1 includes a fifth region R5 overlapping the first conductive type semiconductor layer 107a and a sixth region R6 not overlapping the first conductive type semiconductor layer 107a. The sixth region R6 surrounds the fifth region R5. The relative size relationship between the fifth region R5 and the sixth region R6 can be adjusted according to the requirements of the photoelectric characteristics of the product. In one embodiment, the fifth region R5 is smaller than the sixth region R6. By reducing the area of the fifth region R5, the area of the first extension 106b1 covering the first conductive type semiconductor layer 107a is reduced, thereby increasing the transparent oxide conductive layer. The contact area between 105 and the first conductive type semiconductor layer 107a increases the vertically conducted current to improve the forward voltage of the light-emitting element 10. In one embodiment, the fifth region R5 is larger than the sixth region R6, thereby increasing the area covering the first conductive type semiconductor layer 107a below the first extension 106b1, improving the current localization effect, reducing vertical conduction current, and increasing horizontal conduction. current, thereby increasing the brightness of the light-emitting element 10.

The insulating protective layer 109 is located on the second conductive type semiconductor layer 107c such that the second conductive semiconductor layer 107c is located between the semiconductor active structure 107b and the insulating protective layer 109, wherein the insulating protective layer 109 further extends to cover the side of the semiconductor stack 107 And in direct contact with the patterned electrical insulation layer 106 . The material of the patterned electrically insulating layer 106 may include an insulating oxide, nitride, silicon oxide, titanium oxide, aluminum oxide, magnesium fluoride or silicon nitride. The material of the insulating protective layer 109 may include silicon nitride or silicon oxide. The material of the patterned electrically insulating layer 106 may be different from the material of the insulating protective layer 109 . In one embodiment, the material of the patterned electrical insulating layer 106 can be titanium dioxide (TiO ₂ ), and the material of the insulating protective layer 109 can be silicon dioxide (SiO ₂ ) or silicon nitride (SiN _x or Si ₃ N ₄ ). , since titanium dioxide has better etching resistance, the patterned electrical insulating layer 106 made of titanium dioxide can be used as an etching stop layer when etching the semiconductor stack 107 in the subsequent cutting process, while silicon dioxide or silicon nitride It has better light penetration, so the insulating protective layer 109 made of silicon dioxide or silicon nitride is less likely to absorb light. In one embodiment, the light emitted by the semiconductor active structure 107b of the light-emitting element 10 is mainly emitted toward the insulating protective layer 109, that is, the main light-emitting surface of the light-emitting element 10 is the upper surface of the insulating protective layer 109. In one embodiment, the first base portion 108a and/or the first extension portion 108b of the first electrode layer 108 cover a part of the insulating protective layer 109. In one embodiment, the first base portion 108a and/or the first extension portion 108b of the first electrode layer 108 do not cover the insulating protective layer 109. In one embodiment, the insulating protective layer 109 can conformally cover the roughened surface of the second conductive type semiconductor layer 107c away from the semiconductor active structure 107b, so the upper surface of the insulating protective layer 109 can include a concave and convex pattern.

The light-emitting element 10 further includes a conductive bonding layer 101 disposed between the metal reflective layer 103 and the supporting substrate 100 . In one embodiment, the support substrate 100 is a bonding substrate, which is not limited to the requirements of epitaxial conditions (such as lattice constants) for growing the semiconductor stack 107, and appropriate materials can be selected according to actual uses. Specifically, the semiconductor stack 107 is first grown on a growth substrate (not shown) by epitaxial growth, and then the conductive bonding layer 101 is formed on the semiconductor stack 107 and/or the support substrate 100, and is conductively bonded. Layer 101 connects semiconductor stack 107 to support substrate 100 before the growth substrate is removed.

The light-emitting element 10 further includes a diffusion barrier layer 102 disposed between the metal reflective layer 103 and the conductive joint layer 101 to prevent the material of the conductive joint layer 101 from diffusing to the metal reflective layer 103 and reacting with the metal reflective layer 103 to generate compounds or form The alloy affects the reflectivity and conductive properties of the metal reflective layer 103. In order to provide a better protective structure for the metal reflective layer 103, the metal reflective layer 103 does not cover the boundary of the light-emitting element 10 and is separated from the boundary of the light-emitting element by a gap. Therefore, the diffusion barrier layer 102 covers the lower surface of the metal reflective layer 103. and the sides and extends to cover the boundary of the light-emitting element 10 . In one embodiment, the diffusion barrier layer 102 covers both the sides of the transparent non-oxide conductive layer 104 and the side of the metal reflective layer 103, and the diffusion barrier layer 102 simultaneously covers the sides of the transparent non-oxide conductive layer 104 and the side of the metal reflective layer 103. The sides of the metal reflective layer 103 are in direct contact to obtain a better diffusion barrier effect. In one embodiment, the transparent oxide conductive layer 105 , the non-oxide conductive layer 104 and the metal reflective layer 103 do not cover the boundary of the light-emitting element 10 and are separated from the boundary of the light-emitting element 10 by a gap to expose the patterned electrical insulating layer. 106, so that the diffusion barrier layer 102 directly connects the patterned electrical insulation layer 106 to the edge of the light-emitting element.

The light-emitting element 10 further includes a second electrode layer 110 disposed on the lower surface of the supporting substrate 100 for connecting to external components, such as a packaging carrier or a circuit board, through packaging wires.

Please refer to the first and third figures. The third figure is a schematic cross-sectional view along the section line BB' in the first figure. The transparent oxide conductive layer 105 further includes a plurality of openings 105a. The bottoms of the plurality of openings 105a expose the surface of the second extension part 106b2. The transparent non-oxide conductive layer 104 fills the plurality of openings 105a and communicates with the second extension part 106b2. The extension portion 106b2 is in contact. In one embodiment, as shown in the first figure, the width of each opening 105a is, for example, 2-15 microns; the pattern of each opening 105a is, for example, circular. In one embodiment, the transparent non-oxide conductive layer 104 may cover the opening 105a. In one embodiment, the transparent non-oxide conductive layer 104 may have openings corresponding to the openings 105a, so that the metal reflective layer 103 fills the plurality of openings 105a and then contacts the second extension 106b2 to increase adhesion. In one embodiment, the transparent oxide conductive layer 105 may not have openings 105a. The adhesion between the metal reflective layer 103 and the transparent oxide conductive layer 105 can be increased by selecting a suitable material for the transparent non-oxide conductive layer 104, such as titanium nitride, which also functions as an adhesive layer.

In one embodiment, the first conductive type semiconductor layer 107a has a first conductivity type and the second conductive type semiconductor layer 107c has a second conductivity type opposite to the first conductivity type to respectively provide electrons and holes to the semiconductor active structure 107b. Thereby, electrons and holes can be combined in the semiconductor active structure 107b to emit light of a specific wavelength. In one embodiment, the first conductivity type is, for example, p-type, and the second conductivity type, for example, is n-type. In another embodiment, the first conductivity type is, for example, n-type, and the second conductivity type, for example, is p-type. The first conductive type semiconductor layer 107a, the semiconductor active structure 107b, and the second conductive type semiconductor layer 107c all include the same series of III-V compound semiconductor materials, such as AlInGaAs series, AlGaInP series, InGaAsP series or AlInGaN series. Among them, the AlInGaAs series can be expressed as (Al _x1 In _(1-x1) ) _1-x2 Ga _x2 As, the AlInGaP series can be expressed as (Al _x1 In _(1-x1) ) _1-x2 Ga _x2 P, and the AlInGaN series can be expressed as is (Al _x1 In _(1-x1) ) _1-x2 Ga _x2 N, the InGaAsP series can represent In _x1 Ga _1-x1 As _x2 P _1-x2 , where 0≦x1≦1, 0≦x2≦1. The light-emitting element 10 is, for example, a light-emitting diode, and the wavelength of the light it emits depends on the material composition of the semiconductor active structure 107b. Specifically, the material of the semiconductor active structure 107b may include AlInGaAs, InGaAsP, AlGaInP, InGaN or AlGaN. For example, the light-emitting element 10 can emit infrared light with a peak wavelength between 700 nm and 1700 nm, red light with a peak wavelength between 610 nm and 700 nm, and a peak wavelength between 530 nm and 570 nm. Yellow light between 400 nm and 490 nm, blue or deep blue light with a peak wavelength between 400 nm and 490 nm, green light with a peak wavelength between 490 nm and 550 nm, or between 250 nm and 400 nm of ultraviolet light. In one embodiment, the semiconductor active structure 107b may be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or multiple quantum wells. (multi-quantum well; MQW). The material of the semiconductor active structure 107b may be i-type, p-type or n-type semiconductor.

In one embodiment, the support substrate 100 includes conductive materials, such as gallium arsenide (GaAs), indium phosphide (InP), silicon carbide (SiC), gallium phosphide (GaP), and zinc oxide (ZnO). ), gallium nitride (GaN), aluminum nitride (AlN), copper (Cu), tungsten (W), germanium (Ge), or silicon (Si), or alloys or laminates of the above materials. The conductive bonding layer 101 may include metal materials such as copper (Cu), aluminum (Al), tin (Sn), gold (Au), silver (Ag), lead (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten (W), or alloys or laminates of the above materials. The material of the diffusion barrier layer 102 includes chromium (Cr), platinum (Pt), titanium (Ti), tungsten (W), zinc (Zn) or alloys or laminates of the above materials. In one embodiment, when the diffusion barrier layer 102 is a metal stack, the diffusion barrier layer 102 is formed by alternately stacking two or more layers of metal, such as Cr/Pt, Cr/Ti, Cr/ TiW, Cr/W, Cr/Zn, Ti/Pt, Ti/W, Ti/TiW, Ti/Zn, Pt/TiW, Pt/W, Pt/Zn, TiW/W, TiW/Zn, or W/Zn wait. The materials of the metal reflective layer 103 include silver (Ag), gold (Au), aluminum (Al), titanium (Ti), chromium (Cr), copper (Cu), nickel (Ni), platinum (Pt), ruthenium (Ru). ) or alloys or laminates of the above materials. The material of the transparent non-oxide conductive layer 104 includes conductive metal nitride, wherein the conductive metal nitride includes, for example, a transition metal nitride, such as titanium nitride. The material of the transparent oxide conductive layer 105 includes indium tin oxide (ITO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), zinc oxide (ZnO) or indium zinc oxide (IZO). The materials of the patterned electrical insulating layer 106 and the insulating protective layer 109 include dielectric materials, such as tantalum oxide (TaO _x ), aluminum oxide (AlO _x ), silicon dioxide (SiO _x ), oxide Titanium (TiO _x ), silicon nitride (SiN _x ) or spin-on glass (SOG). In this embodiment, the material of the patterned electrical insulation layer 106 includes titanium dioxide (TiOx); the material of the insulating protective layer 109 includes silicon dioxide (SiOx) or silicon nitride (SiNx).

In one embodiment, the first electrode layer 108 and the second electrode layer 110 respectively include a single layer or a multi-layer structure. The first electrode layer 108 and the second electrode layer 110 include at least one material selected from nickel (Ni), titanium (Ti), platinum (Pt), palladium (Pd), silver (Ag), gold (Au), aluminum ( A group consisting of Al), tin (Sn) and copper (Cu).

The above are only preferred embodiments of the present invention, and all equivalent changes and modifications made in accordance with the patentable scope of the present invention shall fall within the scope of the present invention.

10:Light-emitting components 100:Support base plate 100s: upper surface 101: Conductive bonding layer 102: Diffusion barrier layer 103: Metal reflective layer 104: Transparent non-oxide conductive layer 105:Transparent oxide conductive layer 105a:Opening 106: Patterned electrical insulation layer 106a: Second base 106b: Second extension 106b1: First extension 106b2: Second extension 107: Semiconductor stack 107a: First conductivity type semiconductor layer 107b: Semiconductor active structures 107c: Second conductivity type semiconductor layer 108: First electrode layer 108a: first base 108b: First extension 108b1: First extension electrode 108b2: Second extension electrode 109: Insulating protective layer 110: Second electrode layer L1: first side L2: Second side R1: first area R2: Second area R3: The third area R4: The fourth area R5: The fifth area R6: The sixth area X: horizontal direction Y: vertical direction

The first figure is a schematic top view showing an embodiment of a light-emitting element according to the present disclosure.

The second figure is a schematic cross-sectional view along the section line A-A’ in the first figure.

The third figure is a schematic cross-sectional view along the section line B-B' of the first figure.

10:Light-emitting components

100:Support base plate

100s: upper surface

101: Conductive bonding layer

102:Diffusion barrier layer

103: Metal reflective layer

104: Transparent non-oxide conductive layer

105:Transparent oxide conductive layer

106: Patterned electrical insulation layer

106a: Second base

106b: Second extension

106b1: First extension

106b2: Second extension

107: Semiconductor stack

107a: First conductivity type semiconductor layer

107b: Semiconductor active structures

107c: Second conductivity type semiconductor layer

108: First electrode layer

108a: first base

108b: First extension

108b1: First extension electrode

108b2: Second extension electrode

109: Insulating protective layer

110: Second electrode layer

L1: first side

L2: Second side

R1: first area

Claims (9)

A light-emitting element includes: a support substrate including a surface; a semiconductor stack is disposed on the surface of the support substrate, including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a semiconductor active structure located on the A light is emitted between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer has a first work function; a metal reflective layer is disposed on the first conductive type semiconductor layer and the support substrate, wherein the metal reflective layer has a second work function; a transparent oxide conductive layer is disposed between the first conductive type semiconductor layer and the metal reflective layer and has a third work function smaller than the a first work function; and a transparent non-oxide conductive layer disposed between the transparent oxide conductive layer and the metal reflective layer, having a fourth work function smaller than the first work function, wherein the third work function and the The difference in the fourth work function is less than 0.5 eV; wherein the transparent oxide conductive layer is directly connected to the transparent non-oxide conductive layer and the transparent non-oxide conductive layer is directly connected to the metal reflective layer. A light-emitting element includes: a support substrate including a surface; a semiconductor stack is disposed on the surface of the support substrate, including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a semiconductor active structure located on the The space between the first conductive type semiconductor layer and the second conductive type semiconductor layer is used to emit a light, wherein the first conductive type semiconductor layer has a first work function; A metal reflective layer is disposed between the first conductive type semiconductor layer and the support substrate, wherein the metal reflective layer has a second work function; a transparent oxide conductive layer is disposed between the first conductive type semiconductor layer and the metal between the reflective layers, a third work function is smaller than the first work function; and a transparent non-oxide conductive layer is disposed between the transparent oxide conductive layer and the metal reflective layer, having a fourth work function smaller than the first work function; A first work function, wherein the difference between the third work function and the fourth work function is less than 0.5eV; wherein the transparent non-oxide conductive layer completely separates the transparent oxide conductive layer and the metal reflective layer to avoid the transparent oxidation The physical conductive layer contacts the metal reflective layer. The light-emitting element according to claim 1 or 2, wherein the difference between the second work function and the fourth work function is less than 0.5 eV. The light-emitting element of claim 1 or 2, wherein the transparent oxide conductive layer has a refractive index smaller than that of the first conductive type semiconductor layer, and the transparent non-oxide conductive layer has a refractive index smaller than the transparent The refractive index of the oxide conductive layer. The light-emitting element of claim 1 or 2, further comprising a patterned electrical insulating layer formed between the first conductive type semiconductor layer and the transparent oxide conductive layer, the patterned electrical insulating layer having a refractive index The refractive index is smaller than the refractive index of the first conductive type semiconductor layer. The light-emitting element of claim 5, further comprising an electrode layer located on the second conductive type semiconductor layer such that the second conductive type semiconductor layer is located between the semiconductor active structure and the electrode layer, wherein the electrode layer includes A first base is located on a first side of the semiconductor stack, and the patterned electrically insulating layer includes a second base located on a second side of the semiconductor stack opposite to the first side and corresponding to the first base. The light-emitting element of claim 5, further comprising an insulating protective layer located on the second conductive type semiconductor layer such that the second conductive type semiconductor layer is located between the semiconductor active structure and the insulating protective layer, wherein the insulating protective layer The layer further extends to cover the side of the semiconductor stack and is in direct contact with the patterned electrically insulating layer. The light-emitting element of claim 5, wherein the transparent oxide conductive layer includes an opening, and the bottom of the opening exposes the surface of the patterned electrical insulating layer. The light-emitting element of claim 8, wherein the transparent non-oxide conductive layer fills the opening.

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