CN104733572A - Flip led chip and manufacturing method thereof - Google Patents
Flip led chip and manufacturing method thereof Download PDFInfo
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- CN104733572A CN104733572A CN201510144432.4A CN201510144432A CN104733572A CN 104733572 A CN104733572 A CN 104733572A CN 201510144432 A CN201510144432 A CN 201510144432A CN 104733572 A CN104733572 A CN 104733572A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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Abstract
The invention discloses a flip LED chip and a manufacturing method of the flip LED chip. The flip LED chip comprises a front-end structure with a substrate, an N-type gallium nitride layer, a quantum well layer and a P-type gallium nitride layer, and the N-type gallium nitride layer, the quantum well layer and the P-type gallium nitride layer are formed on the substrate. An Ohmic contact layer, a mirror medium layer and a mirror metal layer are formed on the front-end structure, and a first electrode connected with the N-type gallium nitride layer and a second electrode connected with the mirror metal layer are formed. In the flip LED chip, incoming light outside the full reflecting angle of gallium nitride and the mirror medium layer can be fully reflected, the absorption proportion of a mirror on light is reduced, meanwhile, the average reflecting rate of the full incident angle of the mirror is improved, the light emitting efficiency of the chip is improved, and the photoelectric conversion efficiency of the LED chip is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of flip LED chips and manufacture method thereof.
Background technology
Traditional positive assembling structure led chip, P type GaN difficulty of adulterating causes hole low and not easily long thick and cause electric current not easily to spread, and currently generally adopts the method preparing super thin metal film or ito thin film on P type GaN surface to reach electric current to obtain and evenly spread.But metal film electrode layer want absorbent portion light splitting reduce light extraction efficiency, if reduced thickness conversely again Limited Current diffusion layer P type GaN layer surface realize all even reliable current spread.Although ITO light transmittance is up to 90%, conductivity is not as good as metal, and the diffusion effect of electric current is also limited.And exiting surface accomplished by the electrode of this structure and lead-in wire, can block some light during work.Therefore, this P type contact structures constrain the operating current size of LED chip.On the other hand, the PN junction heat of this structure is derived by Sapphire Substrate, in view of sapphire conductive coefficient is very low, longer concerning thermally conductive pathways large-sized power-type chip, and the thermal resistance of this LED chip is comparatively large, and operating current is also restricted.
In order to overcome these deficiencies of formal dress led chip, industry proposes a kind of flip LED chips (Flip chip) structure.As shown in Figure 1, Sapphire Substrate 1, epitaxial loayer 2 and weld layer 3 is comprised.First preparing the large scale flip LED chips with the welding of applicable eutectic when encapsulating, preparing the heat radiation carried base board 4 of corresponding size simultaneously, and make the golden conductive layer of eutectic welding electrode thereon and draw conductive layer, such as ultrasonic wave gold wire ball solder joint 5.Then, eutectic welding equipment is utilized large scale flip LED chips and heat radiation carried base board 4 to be welded together by ultrasonic wave gold wire ball solder joint 5.In such an embodiment, light takes out from Sapphire Substrate.Because light is not from current-diffusion layer outgoing, lighttight like this current-diffusion layer can thicken, can the electric current distribution of even flip LED chips.Simultaneously this structure can also by the heat of PN junction directly by golden conductive layer or metal salient point lead to higher than sapphire 3 ~ 5 times of thermal conductivity coefficient silicon substrate, radiating effect is more excellent; And between PN junction and P electrode, add a reflection layer, turn eliminate being in the light of electrode and lead-in wire, therefore this structure has the aspect preferably characteristics such as electricity, light, heat.Because it takes into account the advantage that light extraction efficiency is high and thermal diffusivity is good, current domestic and international many companies start to strengthen the Innovation Input to flip LED chips.
At present, the light-emitting layer that flip LED chips increases between PN junction and P electrode is metal structure, the high reflectance relying on the metals such as Ag, Al, Rh completes the reflection that quantum well layer is transmitted into the light of chip bottom, metallic reflection has a lot of shortcoming: each angle of light degree all exists light absorption in various degree, reflectivity exists the limit, and such as reflectance of reflector is lower than 90%.Therefore, still govern the quality of flip LED chips.
Summary of the invention
The object of the invention is to, a kind of flip LED chips and manufacture method thereof are provided, improve the light extraction efficiency of flip LED chips, thus promote the photoelectric conversion efficiency of flip LED chips.
For solving the problems of the technologies described above, the invention provides a kind of manufacture method of flip LED chips, comprising:
There is provided front-end architecture, described front-end architecture comprises substrate, is formed at the n type gallium nitride layer on described substrate, quantum well layer and P type gallium nitride layer successively;
Form ohmic contact layer on the surface at described front-end architecture, and carry out patterning, expose described P type gallium nitride layer;
Described ohmic contact layer is formed mirrors dielectric layer, and carries out patterning, expose described P type gallium nitride layer and part ohmic contact layer;
Form speculum metal level, the ohmic contact layer that described speculum metal level covers described mirrors dielectric layer and exposes;
The P type gallium nitride layer that etching exposes, quantum well layer form the first electrode contact hole; And
In described first electrode contact hole, form the first electrode, the speculum metal level covering the ohmic contact layer exposed forms the second electrode.
Optionally, for the manufacture method of described flip LED chips, described mirrors dielectric layer is that one or more layers in silicon oxide layer, titanium oxide layer, alumina layer, magnesium fluoride layer is stacking.
Optionally, for the manufacture method of described flip LED chips, the thickness of described mirrors dielectric layer is
Optionally, for the manufacture method of described flip LED chips, the material of described speculum metal level comprises silver, aluminium, rhodium.
Optionally, for the manufacture method of described flip LED chips, described speculum metal level has also been arranged in pairs or groups and has been comprised chromium, nickel as adhesiving metal; Also arrange in pairs or groups to have and comprise tungsten/titanium, titanium/platinum, nickel as protection metal.
Optionally, for the manufacture method of described flip LED chips, the thickness of described speculum metal level is
Optionally, for the manufacture method of described flip LED chips, after etching formation first electrode contact hole, before formation first electrode and the second electrode, also comprise:
Form separator, described separator covers the sidewall in described speculum metal level and the first electrode contact hole, and described separator exposes the speculum metal level covering described ohmic contact layer.
Accordingly, the invention provides a kind of flip LED chips obtained by the manufacture method of flip LED chips as above, comprising:
Substrate, is formed at the n type gallium nitride layer on described substrate, quantum well layer and P type gallium nitride layer successively;
Be formed at the ohmic contact layer on described P type gallium nitride layer;
Be formed at the mirrors dielectric layer on described ohmic contact layer and speculum metal level, a part for described speculum metal level runs through described mirrors dielectric layer and is connected with ohmic contact layer;
Run through the first electrode contact hole of described speculum metal level, mirrors dielectric layer, ohmic contact layer, P type gallium nitride layer and quantum well layer, the first electrode to be formed in described first electrode contact hole and to be connected with n type gallium nitride layer; And by the second electrode that speculum metal level is connected with ohmic contact layer.
Optionally, for described flip LED chips, also comprise separator, described separator covers the sidewall in described speculum metal level and the first electrode contact hole, and described second electrode runs through described separator.
In flip LED chips provided by the invention and manufacture method thereof, front-end architecture is formed mirrors dielectric layer, speculum metal level, and the two is combined into speculum.Compared to existing technology, incident ray outside gallium nitride and the mirrors dielectric layer angle of total reflection can complete total reflection, greatly reduce the assimilation ratio of speculum to light, improve the average reflectance of the full incident angle of speculum simultaneously, improve the light extraction efficiency of chip, greatly improve the photoelectric conversion efficiency of LED chip.
Accompanying drawing explanation
Fig. 1 is the structural representation of flip LED chips of the prior art;
Fig. 2 is the flow chart of the manufacture method of flip LED chips in the embodiment of the present invention;
Fig. 3-Fig. 9 is the schematic diagram of device architecture in the process of the manufacture method of flip LED chips in the embodiment of the present invention.
Embodiment
Below in conjunction with schematic diagram, flip LED chips of the present invention and manufacture method thereof are described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, a kind of flip LED chips and manufacture method thereof are provided, adopt ODR speculum, namely the combination of mirrors dielectric layer, speculum metal level is comprised, incident ray outside GaN and the mirrors dielectric layer angle of total reflection can complete total reflection, greatly reduces the assimilation ratio of speculum to light, improves the average reflectance of the full incident angle of speculum simultaneously, improve the light extraction efficiency of chip, greatly improve the photoelectric conversion efficiency of LED chip.
Below enumerate the preferred embodiment of described flip LED chips and manufacture method thereof, to clearly demonstrate content of the present invention, will be clear that, content of the present invention is not restricted to following examples, and other improvement by the routine techniques means of those of ordinary skill in the art are also within thought range of the present invention.
Please refer to Fig. 2, and composition graphs 3-Fig. 9, wherein Fig. 2 is the flow chart of the manufacture method of flip LED chips in the embodiment of the present invention; Fig. 3 ~ Fig. 9 is the schematic diagram of device architecture in the process of the manufacture method of flip LED chips in the embodiment of the present invention.
As shown in Figure 2, described flip LED chips and manufacture method thereof comprise:
First, please refer to Fig. 3, perform step S201, provide front-end architecture, described front-end architecture comprises substrate 10, preferably, chooses conventional Sapphire Substrate; Be formed at the n type gallium nitride layer (N-GaN) 11 on described substrate 10, quantum well layer (MQW) 12 and P type gallium nitride layer (P-GaN) 13 successively; Concrete, described n type gallium nitride layer 11, quantum well layer 12 and P type gallium nitride layer 13 can adopt the growing methods such as MOCVD/MBE molecular beam epitaxy to be formed successively.
Secondly, please refer to Fig. 4, perform step S202, form ohmic contact layer 14 on the surface at described front-end architecture, and carry out patterning, expose described P type gallium nitride layer 13; In embodiments of the present invention, the material of described ohmic contact layer 14 can be such as ITO (tin-doped indium oxide) and/or AZO (Al-Doped ZnO).Can be formed by sputtering (Sputter) mode or plasma assisted deposition (RPD) mode.
Then, please refer to Fig. 5, perform step S203, described ohmic contact layer 14 forms mirrors dielectric layer 15, and carries out patterning, expose described P type gallium nitride layer 13 and part ohmic contact layer 14; Can be wherein the opening making to have (substantially) same with ohmic contact layer 14 in same position to the patterning of mirrors dielectric layer 15, and this opening of interval form another opening, exposes part ohmic contact layer 14.Described mirrors dielectric layer 15 is silica (SiO
2) layer, titanium oxide (Ti
3o
5) layer, aluminium oxide (Al
2o
3) layer, magnesium fluoride (MgF
2) one or more layers in layer be stacking, can be formed by electron beam (E-beam), sputtering and ion assisted deposition mode.Illustrate, the Spaced being preferably silicon oxide layer and titanium oxide layer is stacked, or is preferably the silicon oxide layer of individual layer.In the present invention, the refractive index of described mirrors dielectric layer 15 is controlled below 2.4.Therefore, the material of described mirrors dielectric layer 15 is not limited to above-mentioned enumerated several.The difference of foundation selected materials and quantity, the thickness of described mirrors dielectric layer also can change to some extent, and in the present invention, this thickness can be
Then, please refer to Fig. 6, perform step S204, form speculum metal level 16, the ohmic contact layer 14 that described speculum metal level 16 covers described mirrors dielectric layer 15 and exposes; Described speculum metal level 16 can adopt negative glue to remove (lift-out) technology, is optionally formed at setting regions evaporation.The material of described speculum metal level 16 comprises silver (Ag), aluminium (Al), rhodium (Rh).Concrete, described speculum metal level 16 is also arranged in pairs or groups to have and is comprised chromium (Cr), nickel (Ni) as adhesiving metal; Also arrange in pairs or groups to have and comprise tungsten (W)/titanium (Ti), titanium (Ti)/platinum (Pt), nickel (Ni) as protection metal.In the present invention, the thickness of described speculum metal level 16 is
As shown in Figure 6, described speculum metal level 16 is patterned equally, forms the opening identical with ohmic contact layer 14 position size (substantially) with mirrors dielectric layer 15.Be connected with ohmic contact layer 14 at another opening part of mirrors dielectric layer 15, to realize the conducting of electric current simultaneously.And the edge of described speculum metal level 16 slightly inside contracts, and exposes mirrors dielectric layer 15, thus the separator formed after making covers.
Afterwards, please refer to Fig. 7, perform step S205, etch the P type gallium nitride layer 13, the quantum well layer 12 that expose, form the first electrode contact hole 17; Described etching preferably adopts dry etch process, such as, adopt ICP/RIE etching apparatus.Be etched completely at quantum well layer 12, inevitably, described n type gallium nitride layer 11 also can be etched, and therefore, needs to check on to reduce the etching to n type gallium nitride layer 11 as far as possible to etching technics.
Afterwards, please refer to Fig. 8, form separator 18, described separator 18 covers the sidewall in described speculum metal level 16 and the first electrode contact hole 17, and described separator 18 exposes the speculum metal level 16 covering described ohmic contact layer 14.The material of described separator 18 can be such as silica, through PECVD, and is formed in conjunction with photoetching, BOE lithographic technique, thus reaches the effect of protection etching frame.
Finally, please refer to Fig. 9, perform step S206, in described first electrode contact hole, form the first electrode 19, the speculum metal level 16 covering the ohmic contact layer 14 exposed forms the second electrode 20.Described first electrode 19 and the second electrode 20 can adopt the mode of electron beam/sputtering, use negative glue removal technology to be formed.Described first electrode 19 and the second electrode 20 are used as the bonding with base plate for packaging (not shown).
After formation first electrode 19 and the second electrode 20, also comprise: thinning described substrate 10 (not shown).Optionally can carry out surface coarsening, such as use the equipment such as E-beam, Sputter, RPD to carry out alumina preparation, use dry etching to add the method for mask, after at the bottom of peeling liner, use KOH wet method pattern n type gallium nitride layer 11 etc.
Please continue to refer to Fig. 9, through above-mentioned steps, obtain flip LED chips of the present invention, comprising:
Substrate 10, is formed at the n type gallium nitride layer 11 on described substrate 10, quantum well layer 12 and P type gallium nitride layer 13 successively; Be formed at the ohmic contact layer 14 on described P type gallium nitride layer 13; Be formed at the mirrors dielectric layer 15 on described ohmic contact layer 14 and speculum metal level 16, a part for described speculum metal level 16 runs through described mirrors dielectric layer 14 and is connected with ohmic contact layer 14; Run through the first electrode contact hole of described speculum metal level 16, mirrors dielectric layer 15, ohmic contact layer 14, P type gallium nitride layer 13, quantum well layer 12, first electrode 19 to be formed in described first electrode contact hole and to be connected with n type gallium nitride layer 11, the second electrode 20 be connected with ohmic contact layer 14 by speculum metal level 16.Also comprise separator 18, described separator 18 covers the sidewall in described speculum metal level 16 and the first electrode contact hole, and described second electrode 20 runs through described separator 18.
In flip LED chips provided by the invention and manufacture method thereof, front-end architecture is formed mirrors dielectric layer, speculum metal level, and the two is combined into speculum.Compared to existing technology, incident ray outside gallium nitride and the mirrors dielectric layer angle of total reflection can complete total reflection, greatly reduce the assimilation ratio of speculum to light, improve the average reflectance of the full incident angle of speculum simultaneously, improve the light extraction efficiency of chip, greatly improve the photoelectric conversion efficiency of LED chip.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (9)
1. a manufacture method for flip LED chips, comprising:
There is provided front-end architecture, described front-end architecture comprises substrate, is formed at the n type gallium nitride layer on described substrate, quantum well layer and P type gallium nitride layer successively;
Form ohmic contact layer on the surface at described front-end architecture, and carry out patterning, expose described P type gallium nitride layer;
Described ohmic contact layer is formed mirrors dielectric layer, and carries out patterning, expose described P type gallium nitride layer and part ohmic contact layer;
Form speculum metal level, the ohmic contact layer that described speculum metal level covers described mirrors dielectric layer and exposes;
The P type gallium nitride layer that etching exposes, quantum well layer form the first electrode contact hole; And
In described first electrode contact hole, form the first electrode, the speculum metal level covering the ohmic contact layer exposed forms the second electrode.
2. the manufacture method of flip LED chips as claimed in claim 1, is characterized in that, described mirrors dielectric layer is that one or more layers in silicon oxide layer, titanium oxide layer, alumina layer, magnesium fluoride layer is stacking.
3. the manufacture method of flip LED chips as claimed in claim 2, it is characterized in that, the thickness of described mirrors dielectric layer is
4. the manufacture method of flip LED chips as claimed in claim 1, it is characterized in that, the material of described speculum metal level comprises silver, aluminium, rhodium.
5. the manufacture method of flip LED chips as claimed in claim 4, it is characterized in that, described speculum metal level has also been arranged in pairs or groups and has been comprised chromium, nickel as adhesiving metal; Also arrange in pairs or groups to have and comprise tungsten/titanium, titanium/platinum, nickel as protection metal.
6. the manufacture method of flip LED chips as claimed in claim 5, it is characterized in that, the thickness of described speculum metal level is
7. the manufacture method of flip LED chips as claimed in claim 1, is characterized in that, after etching formation first electrode contact hole, before formation first electrode and the second electrode, also comprises:
Form separator, described separator covers the sidewall in described speculum metal level and the first electrode contact hole, and described separator exposes the speculum metal level covering described ohmic contact layer.
8., by the flip LED chips that the manufacture method of the flip LED chips in claim 1-7 described in any one is obtained, it is characterized in that, comprising:
Substrate, is formed at the n type gallium nitride layer on described substrate, quantum well layer and P type gallium nitride layer successively;
Be formed at the ohmic contact layer on described P type gallium nitride layer;
Be formed at the mirrors dielectric layer on described ohmic contact layer and speculum metal level, a part for described speculum metal level runs through described mirrors dielectric layer and is connected with ohmic contact layer;
Run through the first electrode contact hole of described speculum metal level, mirrors dielectric layer, ohmic contact layer, P type gallium nitride layer and quantum well layer, the first electrode to be formed in described first electrode contact hole and to be connected with n type gallium nitride layer; And by the second electrode that speculum metal level is connected with ohmic contact layer.
9. flip LED chips as claimed in claim 8, it is characterized in that, also comprise separator, described separator covers the sidewall in described speculum metal level and the first electrode contact hole, and described second electrode runs through described separator.
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| CN201510144432.4A CN104733572A (en) | 2015-03-30 | 2015-03-30 | Flip led chip and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510144432.4A CN104733572A (en) | 2015-03-30 | 2015-03-30 | Flip led chip and manufacturing method thereof |
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| CN104733572A true CN104733572A (en) | 2015-06-24 |
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| CN201510144432.4A Pending CN104733572A (en) | 2015-03-30 | 2015-03-30 | Flip led chip and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109103316A (en) * | 2018-09-03 | 2018-12-28 | 东莞中之光电股份有限公司 | A kind of LED flip chip and its manufacturing method |
| CN109244218A (en) * | 2018-09-03 | 2019-01-18 | 东莞中之光电股份有限公司 | A kind of packaging technology of LED flip chip |
| CN110289554A (en) * | 2019-06-18 | 2019-09-27 | 威科赛乐微电子股份有限公司 | One kind simplifying extension upside-down mounting VCSEL chip and its manufacturing method |
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| CN109103316A (en) * | 2018-09-03 | 2018-12-28 | 东莞中之光电股份有限公司 | A kind of LED flip chip and its manufacturing method |
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Application publication date: 20150624 |