CN109244218A - A kind of packaging technology of LED flip chip - Google Patents
A kind of packaging technology of LED flip chip Download PDFInfo
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- CN109244218A CN109244218A CN201811020979.3A CN201811020979A CN109244218A CN 109244218 A CN109244218 A CN 109244218A CN 201811020979 A CN201811020979 A CN 201811020979A CN 109244218 A CN109244218 A CN 109244218A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The present invention relates to technical field of semiconductors, and in particular to a kind of packaging technology of LED flip chip includes the following steps: that (1) is respectively arranged to the metal salient point of Flip chip in the N electrode and P electrode of LED flip chip；(2) chip substrate is provided, setting is respectively used to the metal bosses of the positive and negative electrode of connection external circuit on chip substrate；(3) by the progress eutectic connection corresponding with metal bosses corresponding on substrate respectively of the metal salient point in N electrode and the metal salient point in N electrode；(4) LED flip chip on chip substrate is coated with fluorescent glue, solidification obtains packaged LED flip chip；In the step (4), solidification is solidified using three-level.Packaging technology of the invention solidifies by using three-level, and solidification effect is good, does not influence the light extraction efficiency of LED flip chip, and the colloid surface hardness and strength with higher after solidifying, wear and shock-resistant.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of packaging technology of LED flip chip.
Background technique
LED is a kind of solid state semiconductor devices that can convert electrical energy into visible light.LED can finally be applied in day
Often in life, need to be packaged LED.For different LED chip structures, there are different packaged types, flip LED encapsulation
There is its specific encapsulation scheme,
The components such as the encapsulation of flip LED at present, including LED chip, substrate, interconnection material and glue are encapsulated in flip LED
During, the technique used is using fluorescent glue or glue cake, and full wafer is pressed together on the well laid chip surface of row, to glue curing
Product is cut using cutting machine afterwards, realizes single CSP product.However after coating fluorescent glue, condition of cure can be right
The performance of LED chip generates certain influence.
Summary of the invention
In order to overcome shortcoming and defect existing in the prior art, the purpose of the present invention is to provide a kind of LED upside-down mounting cores
The packaging technology of piece, the packaging technology solidify by using three-level, and solidification effect is good, and do not influence LED flip chip goes out light efficiency
Rate, and the colloid surface hardness and strength with higher after solidifying, wear and shock-resistant.
The purpose of the invention is achieved by the following technical solution: a kind of packaging technology of LED flip chip, including walks as follows
It is rapid:
(1) metal salient point of Flip chip is respectively arranged in the N electrode of LED flip chip and P electrode；
(2) chip substrate is provided, setting is respectively used to the gold of the positive and negative electrode of connection external circuit on chip substrate
Belong to boss；
(3) by the metal salient point in N electrode and the metal salient point in N electrode respectively with corresponding metal bosses pair on substrate
It should carry out eutectic connection；
(4) LED flip chip on chip substrate is coated with fluorescent glue, solidification obtains packaged LED upside-down mounting core
Piece；
In the step (4), solidification is solidified using three-level, level-one solidification: solidification temperature is 140-160 DEG C, 4-6min；Two
Grade solidification: solidification temperature is 120-140 DEG C, 1-3h；Three-level solidifies 100-120 DEG C, 40-60min.
Preferably, in the step (4), fluorescent glue by the silica gel of 75-85 parts by weight, 15-25 parts by weight fluorescent powder,
The diffusant of 0.5-1.5 parts by weight and the coupling agent composition of 0.8-1.2 parts by weight.Fluorescent glue of the invention is by using above-mentioned original
Material, and the weight proportion of each raw material of strict control, the chip high-low temperature resistant impact of fluorescent glue encapsulation obtained, for a long time using not
Aging.
Preferably, the fluorescent powder is by (BaCaMg)10(PO4)6Cl2:Eu2+ fluorescent powder, CeMgAl11O19:Ce3+,Tb3+
Fluorescent powder and (SrMg)3(PO4)2: the mixture that Sn fluorescent powder is formed with weight ratio 2-4:1-2:1.The present invention passes through strict control
Type, compounding and the proportion of fluorescent powder, can be improved the light extraction efficiency of flip LED chips, to promote the light of flip LED chips
Photoelectric transformation efficiency.
Preferably, the diffusant is perovskite quantum dot, nano silica and nano barium sulfate with weight ratio 2-4:
The mixture of 0.5-1.5:1 composition.The present invention passes through type, compounding and the proportion of strict control diffusant, can increase light
Scattering and transmission, while covering light emitting source and dazzling light source, and it is softer that entire fluorescent glue can be made to issue, beautiful, high
Refined light reaches the opaque comfortable effect of light transmission.
Preferably, the coupling agent is by vinyltriethoxysilane, vinyltrimethoxysilane and vinyl three
The mixture that (beta-methoxy ethyoxyl) silane is formed with weight ratio 0.8-1.2:1.4-2.2:1.The present invention passes through strict control idol
Join type, compounding and the proportion of agent, coupling effect is good, convenient for solidification, colloid surface hardness with higher after solidification and
Intensity, wear and shock-resistant.
Preferably, in the step (1), the manufacturing method of LED flip chip includes the following steps:
A, substrate is provided, the substrate is Sapphire Substrate, sequentially forms n type gallium nitride layer, volume over the substrate
Sub- well layer and p-type gallium nitride layer；Specifically, the n type gallium nitride layer, quantum well layer and p-type gallium nitride layer can use
The growing methods such as MOCVD/MBE molecular beam epitaxy sequentially form.
B, ohmic contact layer is formed on the substrate surface, and is patterned, and the p-type gallium nitride layer is exposed；
The material of the ohmic contact layer can be ITO (tin-doped indium oxide) and/or AZO (Al-Doped ZnO), can be by sputtering side
Formula or plasma assisted deposition mode are formed.
C, mirrors dielectric layer is formed on the ohmic contact layer, and is patterned, and the p-type gallium nitride is exposed
Layer and part ohmic contact layer；The refractive index of the mirrors dielectric layer is 2.4 hereinafter, the thickness of the mirrors dielectric layer can
Think 1nm-50 μm.The patterning of mirrors dielectric layer may be such that and ohmic contact layer is in same position (basic)
Same opening, and be spaced this opening and form another opening, expose part ohmic contact layer.
D, reflecting mirror metal layer, ohm that the reflecting mirror metal layer covers the mirrors dielectric layer and exposes are formed
Contact layer；The thickness of the reflecting mirror metal layer can be 50nm-10 μm.The reflecting mirror metal layer is equally patterned, shape
At with the identical opening of mirrors dielectric layer and ohmic contact layer position size (basic).Simultaneously in the another of mirrors dielectric layer
Opening is connected with ohmic contact layer, to realize the conducting of electric current.And the edge of the reflecting mirror metal layer slightly inside contracts,
Mirrors dielectric layer is exposed, so that the separation layer covering formed later.
E, the p-type gallium nitride layer exposed is etched, quantum well layer forms N electrode contact hole；ICP/RIE etching can be used to set
It is standby.After quantum well layer is etched completely, inevitably, the n type gallium nitride layer can also be etched, and therefore, it is necessary to quarter
Etching technique is checked on to reduce the etching to n type gallium nitride layer as far as possible.
F, form separation layer, the separation layer covers the side wall of the reflecting mirror metal layer and N electrode contact hole, it is described every
Absciss layer exposes the reflecting mirror metal layer for covering the ohmic contact layer；The material of the separation layer can be silica, pass through
PECVD, and photoetching, BOE lithographic technique is combined to be formed, to have the function that protection etching frame.
G, N electrode is formed in the N electrode contact hole, in the reflecting mirror metal layer for the ohmic contact layer that covering exposes
Upper formation P electrode；N electrode is used to be bonded with chip substrate with P electrode.
H, the Sapphire Substrate back side is carried out thinned, and forms coarse aluminium oxide at the Sapphire Substrate back side
Layer.The coarse alumina layer with a thickness of 1nm-50 μm, surface roughness Ra < 0.4 μm of the coarse alumina layer can be with
The Sapphire Substrate is thinned using CMP process.It is heavy that the coarse alumina layer can be assisted by electron beam, sputtering or ion
A kind of formation of product mode is also possible to by a variety of in electron beam, sputtering or ion assisted deposition mode, and layering is formed.
In addition, the coarse alumina layer can be and grow to be formed by the entire back side, or grow to be formed by subregion.
Mirrors dielectric layer and reflecting mirror metal has been formed on the substrate in the manufacturing method of LED flip chip of the invention
Layer, the two are combined into reflecting mirror.Compared with prior art, the incident ray outside gallium nitride and the mirrors dielectric layer angle of total reflection can
Total reflection is completed, greatly reduces reflecting mirror to the assimilation ratio of light, while improving the average anti-of the full incident angle of reflecting mirror
Rate is penetrated, the light extraction efficiency of chip is improved, greatly improves the photoelectric conversion efficiency of LED chip.
After the manufacturing method of LED flip chip of the invention be thinned at the back side (i.e. light-emitting surface) of Sapphire Substrate,
Form coarse alumina layer.Compared with prior art, the coarse consistent alumina layer of same substrate material of this layer of surface, reaches
The effect of roughing in surface improving extraction efficiency also overcomes and is easy the defects of having an impact to front, is at high cost in the prior art,
Therefore preparation cost is low, complex process degree is low, easily realizes scale of mass production.
The light extraction efficiency of flip LED chips can be improved in the manufacturing method of LED flip chip of the invention, to be promoted
The photoelectric conversion efficiency for filling LED chip, can also avoid the influence to chip front side, and reduce cost of manufacture.
LED flip chip light extraction efficiency with higher produced by the present invention, good heat dissipation effect are with higher to use the longevity
Life and reliability, structure is simple, at low cost.
Preferably, in the step C, mirrors dielectric layer is formed using ion beam assisted depositing coating process.This
Invention can be improved down by using ion beam assisted depositing coating process and negtive photoresist removal technology, the mirrors dielectric layer of formation
Fill the light extraction efficiency of LED chip.
Preferably, the mirrors dielectric layer is made of alternately stacked silica membrane and titanium deoxid film.This
By using alternately stacked silica membrane and titanium deoxid film, as mirrors dielectric layer, upside-down mounting can be improved in invention
The light extraction efficiency of LED chip.
Preferably, in the step D, reflecting mirror metal layer is that using plasma enhancing chemical vapor deposition process is formed
's.The present invention is by using plasma enhanced chemical vapor deposition technique and negtive photoresist removal technology, the reflecting mirror metal of formation
The light extraction efficiency of flip LED chips can be improved in layer, to promote the photoelectric conversion efficiency of flip LED chips.
Preferably, the material of the reflecting mirror metal layer is the combination of Ni/Ag/Ti/Pt/Au/W, and thickness ratio is (4-
8): (0.5-1.5): (2-6): (0.02-0.06): (0.04-0.08): 1.The present invention makees by using Ni/Ag/Ti/Pt/Au/W
For reflecting mirror metal layer, and the thickness ratio of each metal layer of strict control, the light extraction efficiency of flip LED chips can be improved, thus
Promote the photoelectric conversion efficiency of flip LED chips.
Preferably, in the step E, N electrode contact hole is formed using dry etch process.The present invention by using
Dry etch process, etching effect are good.
Preferably, in the step G, N electrode is to use electron beam evaporation plating or magnetron sputtering in the N electrode contact hole
Deposition filling metal layer is formed.The present invention removes skill using negtive photoresist by using the mode of electron beam evaporation plating or magnetron sputtering
The N electrode conductive effect of art, formation is good.
Preferably, the material of the N electrode is the combination of Cr/Al/Ti/Pt/Au/Sn/Ag, and thickness ratio is (3-5):
(2-4): 1:(0.01-0.05): (0.08-0.12): (0.8-1.2).The present invention is by using Cr/Al/Ti/Pt/Au/Sn/Ag
As N electrode, and the thickness ratio of each metal layer of strict control, conductive effect is good, and flip LED chips can be improved goes out light efficiency
Rate, to promote the photoelectric conversion efficiency of flip LED chips.
Preferably, the material of the P electrode is the combination of Ni/Au/Cr/Pt/Au/Sn/W, and thickness ratio is (2-4):
(0.04-0.08): (1-3): (0.03-0.07): (0.05-0.09): 1.The present invention is by using Ni/Au/Cr/Pt/Au/Sn/W
As P electrode, and the thickness ratio of each metal layer of strict control, conductive effect is good, and flip LED chips can be improved goes out light efficiency
Rate, to promote the photoelectric conversion efficiency of flip LED chips.
The beneficial effects of the present invention are: packaging technology of the invention solidifies by using three-level, and each rank of strict control
The solidification temperature of section and curing time, solidification effect is good, does not influence the light extraction efficiency of LED flip chip, and the colloid after solidifying
Surface hardness and strength with higher, wear and shock-resistant.
Specific embodiment
For the ease of the understanding of those skilled in the art, below with reference to embodiment, the present invention is further illustrated, real
The content that the mode of applying refers to not is limitation of the invention.
Embodiment 1
A kind of packaging technology of LED flip chip, includes the following steps:
(1) metal salient point of Flip chip is respectively arranged in the N electrode of LED flip chip and P electrode；
(2) chip substrate is provided, setting is respectively used to the gold of the positive and negative electrode of connection external circuit on chip substrate
Belong to boss；
(3) by the metal salient point in N electrode and the metal salient point in N electrode respectively with corresponding metal bosses pair on substrate
It should carry out eutectic connection；
(4) LED flip chip on chip substrate is coated with fluorescent glue, solidification obtains packaged LED upside-down mounting core
Piece；
In the step (4), solidification is solidified using three-level, level-one solidification: solidification temperature is 140 DEG C, 6min；Second level is solid
Change: solidification temperature is 120 DEG C, 3h；Three-level solidifies 100 DEG C, 60min.
In the step (4), fluorescent glue by the silica gel of 75 parts by weight, the fluorescent powder, 0.5 parts by weight of 15 parts by weight diffusion
The coupling agent of agent and 0.8 parts by weight composition.
The fluorescent powder is by (BaCaMg)10(PO4)6Cl2:Eu2+ fluorescent powder, CeMgAl11O19:Ce3+,Tb3+ fluorescent powder
(SrMg)3(PO4)2: the mixture that Sn fluorescent powder is formed with weight ratio 2:1:1.
The diffusant is that perovskite quantum dot, nano silica and nano barium sulfate are formed with weight ratio 2:0.5:1
Mixture.
The coupling agent is by three (beta-methoxy of vinyltriethoxysilane, vinyltrimethoxysilane and vinyl
Ethyoxyl) mixture that is formed with weight ratio 0.8:1.4:1 of silane.
In the step (1), the manufacturing method of LED flip chip includes the following steps:
A, substrate is provided, the substrate is Sapphire Substrate, sequentially forms n type gallium nitride layer, volume over the substrate
Sub- well layer and p-type gallium nitride layer；
B, ohmic contact layer is formed on the substrate surface, and is patterned, and the p-type gallium nitride layer is exposed；
C, mirrors dielectric layer is formed on the ohmic contact layer, and is patterned, and the p-type gallium nitride is exposed
Layer and part ohmic contact layer；
D, reflecting mirror metal layer, ohm that the reflecting mirror metal layer covers the mirrors dielectric layer and exposes are formed
Contact layer；
E, the p-type gallium nitride layer exposed is etched, quantum well layer forms N electrode contact hole；
F, form separation layer, the separation layer covers the side wall of the reflecting mirror metal layer and N electrode contact hole, it is described every
Absciss layer exposes the reflecting mirror metal layer for covering the ohmic contact layer；
G, N electrode is formed in the N electrode contact hole, in the reflecting mirror metal layer for the ohmic contact layer that covering exposes
Upper formation P electrode；
H, the Sapphire Substrate back side is carried out thinned, and forms coarse aluminium oxide at the Sapphire Substrate back side
Layer.
In the step C, mirrors dielectric layer is formed using ion beam assisted depositing coating process；The reflecting mirror
Dielectric layer is made of alternately stacked silica membrane and titanium deoxid film.
In the step D, reflecting mirror metal layer is using plasma enhancing chemical vapor deposition process formation；It is described
The material of reflecting mirror metal layer is the combination of Ni/Ag/Ti/Pt/Au/W, and thickness ratio is 4:0.5:2:0.02:0.04:1.
In the step E, N electrode contact hole is formed using dry etch process；In the step G, N electrode is to adopt
Deposit what filling metal layer was formed in the N electrode contact hole with electron beam evaporation plating or magnetron sputtering.
The material of the N electrode is the combination of Cr/Al/Ti/Pt/Au/Sn/Ag, and thickness ratio is 3:2:1:0.01:
0.08:0.8；The material of the P electrode is the combination of Ni/Au/Cr/Pt/Au/Sn/W, and thickness ratio is 2:0.04:1:0.03:
0.05:1.
Embodiment 2
The present embodiment and above-described embodiment 1 the difference is that: in the step (4), solidification is solidified using three-level, one
Grade solidification: solidification temperature is 145 DEG C, 5.5min；Second level solidification: solidification temperature is 125 DEG C, 2.5h；Three-level solidifies 105 DEG C,
55min。
In the step (4), fluorescent glue by the silica gel of 78 parts by weight, the fluorescent powder, 0.8 parts by weight of 18 parts by weight diffusion
The coupling agent of agent and 0.9 parts by weight composition.
The fluorescent powder is by (BaCaMg)10(PO4)6Cl2:Eu2+ fluorescent powder, CeMgAl11O19:Ce3+,Tb3+ fluorescent powder
(SrMg)3(PO4)2: the mixture that Sn fluorescent powder is formed with weight ratio .5:1.2:1.
The diffusant is perovskite quantum dot, nano silica and nano barium sulfate with weight ratio 2.5:0.8:1 group
At mixture.
The coupling agent is by three (beta-methoxy of vinyltriethoxysilane, vinyltrimethoxysilane and vinyl
Ethyoxyl) mixture that is formed with weight ratio 0.9:1.6:1 of silane.
The material of the reflecting mirror metal layer is the combination of Ni/Ag/Ti/Pt/Au/W, and thickness ratio is 5:0.8:3:
0.03:0.05:1.
The material of the N electrode is the combination of Cr/Al/Ti/Pt/Au/Sn/Ag, and thickness ratio is 3.5:2.5:1:0.02:
0.09:0.9；The material of the P electrode is the combination of Ni/Au/Cr/Pt/Au/Sn/W, and thickness ratio is 2.5:0.05:1.5:
0.04:0.06:1.
Embodiment 3
The present embodiment and above-described embodiment 1 the difference is that: in the step (4), solidification is solidified using three-level, one
Grade solidification: solidification temperature is 150 DEG C, 5min；Second level solidification: solidification temperature is 130 DEG C, 2h；Three-level solidifies 110 DEG C, 50min.
In the step (4), fluorescent glue by the silica gel of 80 parts by weight, the fluorescent powder of 20 parts by weight, 1 parts by weight diffusant
It is formed with the coupling agent of 1 parts by weight.
The fluorescent powder is by (BaCaMg)10(PO4)6Cl2:Eu2+ fluorescent powder, CeMgAl11O19:Ce3+,Tb3+ fluorescent powder
(SrMg)3(PO4)2: the mixture that Sn fluorescent powder is formed with weight ratio 3:1.5:1.
The diffusant is perovskite quantum dot, nano silica and nano barium sulfate with weight ratio 2-4:0.5-1.5:
The mixture of 1 composition.
The coupling agent is by three (beta-methoxy of vinyltriethoxysilane, vinyltrimethoxysilane and vinyl
Ethyoxyl) mixture that is formed with weight ratio 1:1.8:1 of silane.
The material of the reflecting mirror metal layer is the combination of Ni/Ag/Ti/Pt/Au/W, and thickness ratio is 6:1:4:0.04:
0.06:1.
The material of the N electrode is the combination of Cr/Al/Ti/Pt/Au/Sn/Ag, and thickness ratio is 4:3:1:0.03:0.1:
1；The material of the P electrode is the combination of Ni/Au/Cr/Pt/Au/Sn/W, and thickness ratio is 3:0.06:2:0.05:0.07:1.
Embodiment 4
The present embodiment and above-described embodiment 1 the difference is that: in the step (4), solidification is solidified using three-level, one
Grade solidification: solidification temperature is 155 DEG C, 4.5min；Second level solidification: solidification temperature is 135 DEG C, 1.5h；Three-level solidifies 115 DEG C,
45min。
In the step (4), fluorescent glue by the silica gel of 82 parts by weight, the fluorescent powder, 1.2 parts by weight of 22 parts by weight diffusion
The coupling agent of agent and 1.1 parts by weight composition.
The fluorescent powder is by (BaCaMg)10(PO4)6Cl2:Eu2+ fluorescent powder, CeMgAl11O19:Ce3+,Tb3+ fluorescent powder
(SrMg)3(PO4)2: the mixture that Sn fluorescent powder is formed with weight ratio 3.5:1.8:1.
The diffusant is perovskite quantum dot, nano silica and nano barium sulfate with weight ratio 3.5:1.2:1 group
At mixture.
The coupling agent is by three (beta-methoxy of vinyltriethoxysilane, vinyltrimethoxysilane and vinyl
Ethyoxyl) mixture that is formed with weight ratio 1.1:2:1 of silane.
The material of the reflecting mirror metal layer is the combination of Ni/Ag/Ti/Pt/Au/W, and thickness ratio is 7:1.2:5:
0.05:0.07:1.
The material of the N electrode is the combination of Cr/Al/Ti/Pt/Au/Sn/Ag, and thickness ratio is 4.5:3.5:1:0.04:
0.011:1.1；The material of the P electrode is the combination of Ni/Au/Cr/Pt/Au/Sn/W, and thickness ratio is 3.5:0.07:2.5:
0.06:0.08:1.
Embodiment 5
The present embodiment and above-described embodiment 1 the difference is that: in the step (4), solidification is solidified using three-level, one
Grade solidification: solidification temperature is 160 DEG C, 4min；Second level solidification: solidification temperature is 140 DEG C, 1h；Three-level solidifies 120 DEG C, 40min.
In the step (4), fluorescent glue by the silica gel of 85 parts by weight, the fluorescent powder, 1.5 parts by weight of 25 parts by weight diffusion
The coupling agent of agent and 1.2 parts by weight composition.
The fluorescent powder is by (BaCaMg)10(PO4)6Cl2:Eu2+ fluorescent powder, CeMgAl11O19:Ce3+,Tb3+ fluorescent powder
(SrMg)3(PO4)2: the mixture that Sn fluorescent powder is formed with weight ratio 4:2:1.
The diffusant is that perovskite quantum dot, nano silica and nano barium sulfate are formed with weight ratio 4:1.5:1
Mixture.
The coupling agent is by three (beta-methoxy of vinyltriethoxysilane, vinyltrimethoxysilane and vinyl
Ethyoxyl) mixture that is formed with weight ratio 1.2:2.2:1 of silane.
The material of the reflecting mirror metal layer is the combination of Ni/Ag/Ti/Pt/Au/W, and thickness ratio is 8:1.5:6:
0.06:0.08:1.
The material of the N electrode is the combination of Cr/Al/Ti/Pt/Au/Sn/Ag, and thickness ratio is 5:4:1:0.05:
0.12:1.2；The material of the P electrode is the combination of Ni/Au/Cr/Pt/Au/Sn/W, and thickness ratio is 4:0.08:3:0.07:
0.09:1.
Packaging technology of the invention solidifies by using three-level, and when the solidification temperature and solidification in strict control each stage
Between, solidification effect is good, do not influence the light extraction efficiency of LED flip chip, and colloid surface hardness with higher after solidifying and
Intensity, wear and shock-resistant.
Above-described embodiment is the preferable implementation of the present invention, and in addition to this, the present invention can be realized with other way,
Do not depart under the premise of present inventive concept it is any obviously replace it is within the scope of the present invention.
Claims (10)
1. a kind of packaging technology of LED flip chip, characterized by the following steps:
(1) metal salient point of Flip chip is respectively arranged in the N electrode of LED flip chip and P electrode；
(2) provide a chip substrate, on chip substrate setting be respectively used to connection external circuit positive and negative electrode metal it is convex
Platform；
(3) by the metal salient point in N electrode and the metal salient point in N electrode respectively it is corresponding with corresponding metal bosses on substrate into
The connection of row eutectic；
(4) LED flip chip on chip substrate is coated with fluorescent glue, solidification obtains packaged LED flip chip；
In the step (4), solidification is solidified using three-level, level-one solidification: solidification temperature is 140-160 DEG C, 4-6min；Second level is solid
Change: solidification temperature is 120-140 DEG C, 1-3h；Three-level solidifies 100-120 DEG C, 40-60min.
2. a kind of packaging technology of LED flip chip according to claim 1, it is characterised in that: in the step (4),
Fluorescent glue by the silica gel of 75-85 parts by weight, the fluorescent powder of 15-25 parts by weight, 0.5-1.5 parts by weight diffusant and 0.8-1.2
The coupling agent of parts by weight forms.
3. a kind of packaging technology of LED flip chip according to claim 2, it is characterised in that: the fluorescent powder be by
(BaCaMg)10(PO4)6Cl2:Eu2+Fluorescent powder, CeMgAl11O19:Ce3+,Tb3+Fluorescent powder and (SrMg)3(PO4)2: Sn fluorescent powder
The mixture formed with weight ratio 2-4:1-2:1.
4. a kind of packaging technology of LED flip chip according to claim 2, it is characterised in that: the diffusant is calcium
The mixture that titanium ore quantum dot, nano silica and nano barium sulfate are formed with weight ratio 2-4:0.5-1.5:1.
5. a kind of packaging technology of LED flip chip according to claim 2, it is characterised in that: the coupling agent be by
Vinyltriethoxysilane, vinyltrimethoxysilane and vinyl three (beta-methoxy ethyoxyl) silane are with weight ratio 0.8-
1.2:1.4-2.2:1 the mixture of composition.
6. a kind of packaging technology of LED flip chip according to claim 1, it is characterised in that: in the step (1),
The manufacturing method of LED flip chip includes the following steps:
A, substrate is provided, the substrate is Sapphire Substrate, sequentially forms n type gallium nitride layer, multiple quantum wells over the substrate
Layer and p-type gallium nitride layer；
B, ohmic contact layer is formed on the substrate surface, and is patterned, and the p-type gallium nitride layer is exposed；
C, form mirrors dielectric layer on the ohmic contact layer, and patterned, expose the p-type gallium nitride layer and
Part ohmic contact layer；
D, reflecting mirror metal layer, the Ohmic contact that the reflecting mirror metal layer covers the mirrors dielectric layer and exposes are formed
Layer；
E, the p-type gallium nitride layer exposed is etched, quantum well layer forms N electrode contact hole；
F, separation layer is formed, the separation layer covers the side wall of the reflecting mirror metal layer and N electrode contact hole, the separation layer
Expose the reflecting mirror metal layer for covering the ohmic contact layer；
G, N electrode is formed in the N electrode contact hole, the shape on the reflecting mirror metal layer for the ohmic contact layer that covering exposes
At P electrode；
H, the Sapphire Substrate back side is carried out thinned, and forms coarse alumina layer at the Sapphire Substrate back side.
7. a kind of packaging technology of LED flip chip according to claim 6, it is characterised in that: in the step C, instead
Mirror dielectric layer is penetrated to be formed using ion beam assisted depositing coating process；The mirrors dielectric layer is by alternately stacked dioxy
SiClx film and titanium deoxid film are constituted.
8. a kind of packaging technology of LED flip chip according to claim 6, it is characterised in that: in the step D, instead
Penetrating mirror metal layer is using plasma enhancing chemical vapor deposition process formation；The material of the reflecting mirror metal layer is
The combination of Ni/Ag/Ti/Pt/Au/W, thickness ratio are (4-8): (0.5-1.5): (2-6): (0.02-0.06): (0.04-
0.08): 1.
9. a kind of packaging technology of LED flip chip according to claim 6, it is characterised in that: in the step E, N electricity
Pole contact hole is formed using dry etch process；In the step G, N electrode is using electron beam evaporation plating or magnetron sputtering
Deposition filling metal layer is formed in the N electrode contact hole.
10. a kind of packaging technology of LED flip chip according to claim 6, it is characterised in that: the material of the N electrode
Matter is the combination of Cr/Al/Ti/Pt/Au/Sn/Ag, and thickness ratio is (3-5): (2-4): 1:(0.01-0.05): (0.08-
0.12): (0.8-1.2)；The material of the P electrode is the combination of Ni/Au/Cr/Pt/Au/Sn/W, and thickness ratio is (2-4):
(0.04-0.08): (1-3): (0.03-0.07): (0.05-0.09): 1.
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