CN103151442A - Light-emitting diode (LED) power source with inversed LED chip and method for producing LED power source with inversed LED chip - Google Patents
Light-emitting diode (LED) power source with inversed LED chip and method for producing LED power source with inversed LED chip Download PDFInfo
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- CN103151442A CN103151442A CN2013100482264A CN201310048226A CN103151442A CN 103151442 A CN103151442 A CN 103151442A CN 2013100482264 A CN2013100482264 A CN 2013100482264A CN 201310048226 A CN201310048226 A CN 201310048226A CN 103151442 A CN103151442 A CN 103151442A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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Abstract
The invention discloses a light-emitting diode (LED) power source with an inversed LED chip and a method for producing the LED power source with the inversed LED chip. The LED power source with the inversed LED chip provided by the invention comprises the LED chip and a base plate, wherein the LED chip comprises a transparent substrate, an N-type coating, an active layer, a P-type coating and a transparent conducting thin film which are sequentially superposed together; an N-type electrode pad is arranged in an exposed area of the N-type coating, and a metal salient point is arranged on the N-type electrode pad; a P-type electrode pad is arranged on the transparent conducting thin film, and a metal salient point is arranged on the P-type electrode pad; the base plate is a transparent base plate, and metal bosses, and a positive electrode and a negative electrode which are used for being connected with an external circuit are arranged on the base plate; and the metal salient points on the N-type electrode pad and the P-type electrode pad are respectively and correspondingly connected with the metal bosses on the base plate, and an encapsulation glue is also arranged on the base plate and covers the LED chip. The light-emitting efficiency of the chip is increased, the chip structure is simplified, and the production technological complexity of the chip is lowered.
Description
Technical field
The present invention relates to the LED technical field, specifically a kind of LED light source of LED chip upside-down mounting and manufacture method thereof.
Background technology
Galliumnitride base LED chip has been widely used in the fields such as many illuminations, indication, demonstration and backlight.To using the LED chip of Sapphire Substrate preparation, because sapphire is non-conductive insulator, make the positive and negative electrode of LED chip must prepare the same side at chip.See also Fig. 1, traditional forward LED chip structure is the semi-conducting material that the growing gallium nitride base contains quantum well 140 on Sapphire Substrate 110.Make N-type gallium nitride layer 130 form the zone of exposing by etching.Then, form transparent conductive film 160 as current extending and photic zone on P-type gallium nitride layer 150.
Galliumnitride base LED chip, its transparent conductive film 160 adopts the Ni/Au material.By at the N-type gallium nitride layer 130 that exposes and the surface of transparent conductive film 160, bonding electrode 200 and 190 being set respectively, described bonding electrode 200 and 190 forms the low resistance ohmic contact with transparent conductive film 160 and N-type gallium nitride layer 130 respectively again.
After the chip energising, the light that quantum well 140 is sent need to be by P-type gallium nitride layer 150 and transparent conductive film 160 (direction in figure shown in arrow is the light direction of LED chip).Although transparent conductive film 160 can form low-resistance Ohm contact with P-type gallium nitride layer 150,, the light transmission of LED chip can sharply descend along with the increase of transparent conductive film 160 thickness, thereby has a strong impact on the light emission rate of LED chip.
So for increasing the light emission rate of LED chip, the thickness of transparent conductive film 160 should not be too thick.But the conductivity of transparent conductive film 160 (or current expansion) can sharply descend along with the minimizing of transparent conductive film 160 thickness again on the other hand, then can affect the light-emitting uniformity of LED chip and the working life of LED chip.So, conflicting between the two, be difficult to take into account.
The LED chip of upside-down mounting can be alleviated the limitation of above-mentioned packed LED chip effectively.See also Fig. 2, the LED chip of upside-down mounting is compared with the LED chip of formal dress, its light direction (direction in figure shown in arrow is the light direction of LED chip) is in a side of transparent substrates 3, the problem that can effectively avoid light direction to be absorbed by transparent conductive film 33.
Also some propagates towards the direction opposite with light direction the light that quantum well 31 is sent, although, there is part light to be reflected back into light direction by transparent conductive film 33, but because the reflection of light rate that the transparent conductive film 33 of the Ni/Au material after annealed alloy is 470～520nm for wavelength generally only has 31%, so most of light all loses through the opposite direction of transparent conductive film 33 along light direction.
And for the light of wavelength 470～520nm, the film of Ag and Al material has respectively 95% and 84% light reflectivity nearly, but they can not be directly and P-type gallium nitride layer 32 form low-resistance Ohm contacts.
For this problem, industry has proposed an improvement scheme, at first prepares Ni base film 35 on transparent conductive film 33, then prepares Ag film or the Al film 36 of high reflectance thereon; Perhaps, then preparation NiO/Au Quito layer film 35 on transparent conductive film 33 at first, then prepares Ag film or the Al film 36 of high reflectance thereon.
The structure that employing Ni base film is added Ag film or the Al film of high reflectance is because reverse bright dipping only is left about 30-40% reflection by Ni base film double absorption, so the reflecting effect of Ag film or Al film and not obvious.To adopting NiO/Au Quito layer film to add the structure of Ag film or the Al film of high reflectance, due to the low-transmittance of NiO/Au Quito layer film, most of reverberation is sponged too, make the raising of its reflecting effect equally also not obvious.
Summary of the invention
A wherein purpose of the present invention has been to provide a kind of LED light source of LED chip upside-down mounting.
Another object of the present invention is to provide a kind of LED light source manufacture method of LED chip upside-down mounting.
In order to achieve the above object, the present invention has adopted following technical scheme:
A kind of LED light source of LED chip upside-down mounting comprises LED chip and substrate, and described LED chip comprises transparent substrates, N-type coating, active layer, P-type coating, the transparent conductive film layer of stack successively; The zone of exposing in this N-type coating is provided with N-type electrode pad, and this N-type electrode pad is provided with metal salient point; Described transparent conductive film layer is provided with P-type electrode pad, and this P-type electrode pad is provided with metal salient point;
Described substrate is transparent substrate, is provided with the metal boss and reaches the positive and negative electrode that is used for connecting external circuit on this substrate; Metal salient point on metal salient point on this N-type electrode pad and this P-type electrode pad respectively with the corresponding connection of metal boss on this substrate, also be provided with packaging plastic on described substrate, this packaging plastic covers described LED chip.
As the preferred technical solution of the present invention: be provided with resilient coating between described transparent substrates and this N-type coating.
As the preferred technical solution of the present invention: described transparent substrates is the transparent substrates of sapphire, diamond dust, silicon or GaAs material.
As the preferred technical solution of the present invention: described active layer is individual layer or mqw layer structure.
As the preferred technical solution of the present invention: described transparent conductive film layer is the single or multiple lift structure, and thickness is between 1nm-1000nm, and this transparent conductive film layer adopts transparent conductive oxide or electrically conducting transparent nitride material.
As the preferred technical solution of the present invention: be respectively equipped with ohmic contact layer between described N-type coating and this N-type electrode pad and this transparent conductive film layer and this P-type electrode pad.
As the preferred technical solution of the present invention: described substrate is sapphire, transparent ceramic, clear glass or perspex material.
As the preferred technical solution of the present invention: described substrate is provided with one or more LED chips, and the packaging plastic that described packaging plastic is all LED chips of an integral coating or interval coats separately a LED chip.
A kind of LED light source manufacture method of LED chip upside-down mounting comprises the following steps:
A, provide a transparent substrates, the N-type of growing successively coating, active layer, P-type coating on this transparent substrates;
B, N-type coating, active layer and the P-type coating that generates carried out etching, make N-type coating form the zone of exposing;
C, prepare on the surface of P-type coating one with the transparent conductive film layer of its formation ohmic contact;
D, in zone that N-type coating exposes and the surface of transparent conductive film layer prepare respectively N-type electrode pad and P-type electrode pad, and be provided for respectively the metal salient point of Flip chip on N-type electrode pad and P-type electrode pad.
E, provide a transparent substrate, the metal boss is set on this substrate and is used for connecting the positive and negative electrode of external circuit;
F, with the metal salient point on the metal salient point on N-type electrode pad and P-type electrode pad respectively carry out eutectic corresponding to metal boss on substrate connect;
G, packaging plastic is set on substrate encapsulates this LED chip.
As the preferred technical solution of the present invention: in described a step, between this transparent substrates and this N-type coating, growth has a resilient coating.
As the preferred technical solution of the present invention: also comprise a step after described c step, in zone that N-type coating exposes and the surface of transparent conductive film layer one ohmic contact layer is set respectively.
Compared with prior art, LED light source in the present invention adopts flip LED chips and transparent substrate, like this LED chip emit beam can be from the chip top, bottom and the comprehensive bright dipping of surrounding, improve the light extraction efficiency of chip, and cancelled the reflector in LED chip, the facilitating chip structure reduces the complicated process of preparation degree of chip, makes the consistency of chip of batch production more secure.
Description of drawings
Fig. 1 is the LED light source structural representation of LED chip formal dress in known technology.
Fig. 2 is the LED light source structural representation of LED chip upside-down mounting in known technology.
Fig. 3 is LED light source structural representation in the present invention.
Fig. 4 be in the present invention on substrate a plurality of LED chips of upside-down mounting and apply packaging plastic after a wherein structural representation.
Fig. 5 be in the present invention on substrate a plurality of LED chips of upside-down mounting and apply packaging plastic after another structural representation.
Embodiment
See also Fig. 3, the LED light source described in figure comprises LED chip and substrate 19; Described LED chip comprises from top to down transparent substrates 11, N-type coating 13, active layer 14, P-type coating 15, the transparent conductive film layer 16 of stack successively.Wherein, this active layer 14 is individual layer or mqw layer structure.
The zone of exposing in this N-type coating 13 is provided with N-type electrode pad 111, and this N-type electrode pad 111 is provided with metal salient point 16; Described transparent conductive film layer 16 is provided with P-type electrode pad 112, and this P-type electrode pad 112 is provided with metal salient point 17.
Described substrate 19 is transparent substrate, is provided with metal boss 18 and reaches the positive and negative electrode (not shown) that is used for connecting external circuit on this substrate 19; Metal salient point 17 on metal salient point 16 on this N-type electrode pad 111 and this P-type electrode pad 112 respectively with this substrate 19 on the corresponding connection of metal boss 18.Also be provided with packaging plastic 51 (seeing also Fig. 4) on described substrate 19, this packaging plastic 51 covers described LED chip.
More excellent, for increasing the interlayer adhesion of 13 of transparent substrates 11 and N-type coating, be provided with resilient coating 12 between described transparent substrates 11 and this N-type coating 13.
More excellent, for the light that increases LED chip takes out efficient, described transparent substrates 11 can be selected sapphire, diamond dust, silicon or GaAs material.Described substrate 19 can be selected the organic materials such as the inorganic material such as sapphire, transparent ceramic, clear glass or perspex.
More excellent, for making LED chip have suitable light transmittance and conductance, described transparent conductive film layer 16 (for example can adopt the single or multiple lift structure, two-layer or two-layer above structure), thickness is between 1nm-1000nm, and this transparent conductive film layer can adopt transparent conductive oxide or electrically conducting transparent nitride material.
When adopting transparent conductive oxide, can select the oxide of the wherein a kind of metallic element in indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt) and lanthanum (La).
When adopting the electrically conducting transparent nitride, can select to have low sheet resistance and high transmission rate, and contain at least the nitride of titanium (Ti) and nitrogen (N).For example, can use titanium nitride (TiN) or titanium oxynitrides (Ti-N-O).
More excellent, form low resistance ohm between N-type coating 13 and this N-type electrode pad 111 and this transparent conductive film layer 16 and this P-type electrode pad 112 and be connected for making, be respectively equipped with the ohmic contact layer (not shown) between this N-type coating 13 and this N-type electrode pad 111 and this transparent conductive film layer 16 and this P-type electrode pad 112.
The ohmic contact layer that this N-type coating 13 and this N-type electrode pad are 111 can adopt titanium coating and the superimposed structure of aluminum metal layer in conventional art; The ohmic contact layer that this transparent conductive film layer 16 and this P-type electrode pad are 112 can adopt nickel metal layer and gold metal layer or silver metal layer and the superimposed structure of gold metal layer in conventional art.
See also and 4 and Fig. 5, on substrate 19, a plurality of LED chips can be set, and packaging plastic 51 can be an integral body all LED chips are coated, a packaging plastic 51 that also can the interval coats separately LED chips.When a packaging plastic 51 coats a LED chip separately, can reduce the consumption of packaging plastic, reduce accordingly manufacturing cost.
Please continue to consult Fig. 3, the LED light source manufacture method of above-mentioned LED chip upside-down mounting comprises the following steps:
A, provide a transparent lining 11, the N-type of growing successively coating 13, active layer 14, P-type coating 15 on this transparent substrates 11.
B, N-type coating 13, active layer 14 and the P-type coating 15 that generates carried out etching, make N-type coating 13 form the zone of exposing.
C, prepare on the surface of P-type coating 15 one with the transparent conductive film layer 16 of its formation ohmic contact.
D, in zone that N-type coating 13 exposes and the surface of transparent conductive film layer 16 prepare respectively N-type electrode pad 111 and P-type electrode pad 112, and be provided for respectively the metal salient point 16,17 of Flip chip on N-type electrode pad 111 and P-type electrode pad 112.
E, provide a transparent substrate 19, metal boss 18 is set on this substrate 19 and is used for connecting the positive and negative electrode (not shown) of external circuit.
F, with the metal salient point 17 on the metal salient point 16 on N-type electrode pad 111 and P-type electrode pad 112 respectively carry out eutectic corresponding to metal boss 18 on substrate 19 connect.
G, these LED chips of packaging plastic 51 encapsulation are set on substrate 19.
More excellent, in described a step, between this transparent substrates 11 and this N-type coating 13, growth has a resilient coating 13.
More excellent, also comprise a step after described c step, in zone that N-type coating 13 exposes and the surface of transparent conductive film layer 16 an ohmic contact layer (not shown) is set respectively.
In this manufacture method, from resilient coating 12 to P-type coating 15, each layer is to select free general formula: AlxInyGazN (0=x=1,0=y=1,0=z=1,0=x+y+z=1) arbitrary compound in the III group-III nitride based compound of representative be basis formation.For example, when using gallium nitride-based compound semiconductor, resilient coating 12 is formed by GaN, N-type coating 13 is by adding n-type dopant in GaN, for example Si, Ge, Se and Te and form, active layer 14 is formed by InGaN/GaN MQW or AlGaN/GaN MQW, and P-type coating 15 is by adding P-type dopant in GaN, for example Mg, Zn, Ca, Sr and Ba and form.
In LED chip, the preparation technology of each layer adopts traditional handicraft to get final product.For example, can form each layer by using electron beam evaporation plating device, physical vapour deposition (PVD) (PVD), chemical vapour deposition (CVD) (CVD), plasmon deposition (PLD) or the hot evaporator sputter of dimorphism (Dua1-Type) etc.For example, transparent conductive film layer 16 adopts electron beam evaporation plating with under controlled oxygen atmosphere, and the direct evaporation of plasmaassisted sputter and thermal evaporation techniques is on P-type coating 15.The preparation process that it is detailed is just no longer given unnecessary details at this.
The above is only preferred embodiment of the present invention, is not to limit practical range of the present invention; Every equivalence of doing according to the present invention changes and revises, and is all covered by the scope of claims of the present invention.
Claims (11)
1. the LED light source of a LED chip upside-down mounting, comprise LED chip and substrate, it is characterized in that:
Described LED chip comprises transparent substrates, N-type coating, active layer, P-type coating, the transparent conductive film layer of stack successively; The zone of exposing in this N-type coating is provided with N-type electrode pad, and this N-type electrode pad is provided with metal salient point; Described transparent conductive film layer is provided with P-type electrode pad, and this P-type electrode pad is provided with metal salient point;
Described substrate is transparent substrate, is provided with the metal boss and reaches the positive and negative electrode that is used for connecting external circuit on this substrate; Metal salient point on metal salient point on this N-type electrode pad and this P-type electrode pad respectively with the corresponding connection of metal boss on this substrate, also be provided with packaging plastic on described substrate, this packaging plastic covers described LED chip.
2. the LED light source of a kind of LED chip upside-down mounting according to claim 1, is characterized in that: be provided with resilient coating between described transparent substrates and this N-type coating.
3. the LED light source of a kind of LED chip upside-down mounting according to claim 1 and 2, it is characterized in that: described transparent substrates is the transparent substrates of sapphire, diamond dust, silicon or GaAs material.
4. the LED light source of a kind of LED chip upside-down mounting according to claim 1, it is characterized in that: described active layer is individual layer or mqw layer structure.
5. the LED light source of a kind of LED chip upside-down mounting according to claim 1, it is characterized in that: described transparent conductive film layer is the single or multiple lift structure, thickness is between 1nm-1000nm, and this transparent conductive film layer adopts transparent conductive oxide or electrically conducting transparent nitride material.
6. the LED light source of a kind of LED chip upside-down mounting according to claim 1, is characterized in that: be respectively equipped with ohmic contact layer between described N-type coating and this N-type electrode pad and this transparent conductive film layer and this P-type electrode pad.
7. the LED light source of a kind of LED chip upside-down mounting according to claim 1, it is characterized in that: described substrate is sapphire, transparent ceramic, clear glass or perspex material.
8. the LED light source of a kind of LED chip upside-down mounting according to claim 1, it is characterized in that: described substrate is provided with one or more LED chips, and the packaging plastic that described packaging plastic is all LED chips of an integral coating or interval coats separately a LED chip.
9. the LED light source manufacture method of a LED chip upside-down mounting, is characterized in that, comprises the following steps:
A, provide a transparent substrates, the N-type of growing successively coating, active layer, P-type coating on this transparent substrates;
B, N-type coating, active layer and the P-type coating that generates carried out etching, make N-type coating form the zone of exposing;
C, prepare on the surface of P-type coating one with the transparent conductive film layer of its formation ohmic contact;
D, in zone that N-type coating exposes and the surface of transparent conductive film layer prepare respectively N-type electrode pad and P-type electrode pad, and be provided for respectively the metal salient point of Flip chip on N-type electrode pad and P-type electrode pad.
E, provide a transparent substrate, the metal boss is set on this substrate and is used for connecting the positive and negative electrode of external circuit;
F, with the metal salient point on the metal salient point on N-type electrode pad and P-type electrode pad respectively carry out eutectic corresponding to metal boss on substrate connect;
G, packaging plastic is set on substrate encapsulates this LED chip.
10. the LED light source manufacture method of a kind of LED chip upside-down mounting according to claim 9 is characterized in that: in described a step, between this transparent substrates and this N-type coating, growth has a resilient coating.
11. the LED light source manufacture method of a kind of LED chip upside-down mounting according to claim 9 is characterized in that: also comprise a step after described c step, in zone that N-type coating exposes and the surface of transparent conductive film layer one ohmic contact layer is set respectively.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100482264A CN103151442A (en) | 2013-02-06 | 2013-02-06 | Light-emitting diode (LED) power source with inversed LED chip and method for producing LED power source with inversed LED chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013100482264A CN103151442A (en) | 2013-02-06 | 2013-02-06 | Light-emitting diode (LED) power source with inversed LED chip and method for producing LED power source with inversed LED chip |
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| CN103151442A true CN103151442A (en) | 2013-06-12 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112809A (en) * | 2014-06-26 | 2014-10-22 | 山西飞虹微纳米光电科技有限公司 | Flip LED chip and packaging method thereof |
| CN104425657A (en) * | 2013-09-11 | 2015-03-18 | 广镓光电股份有限公司 | Light emitting diode assembly and related lighting device |
| CN109244218A (en) * | 2018-09-03 | 2019-01-18 | 东莞中之光电股份有限公司 | A kind of packaging technology of LED flip chip |
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| CN202487656U (en) * | 2012-03-28 | 2012-10-10 | 深圳市斯迈得光电子有限公司 | All-dimensional lighting LED packaging structure |
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| WO2002090825A1 (en) * | 2001-04-23 | 2002-11-14 | Lab. Sphere Corporation | Lighting device using light-emitting diode |
| CN2754213Y (en) * | 2004-12-08 | 2006-01-25 | 方大集团股份有限公司 | Base board for upside-down mounting LED chip |
| CN201007995Y (en) * | 2006-09-29 | 2008-01-16 | 厦门市三安光电股份有限公司 | 360 degree light-emitting LED lamp |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104425657A (en) * | 2013-09-11 | 2015-03-18 | 广镓光电股份有限公司 | Light emitting diode assembly and related lighting device |
| CN104112809A (en) * | 2014-06-26 | 2014-10-22 | 山西飞虹微纳米光电科技有限公司 | Flip LED chip and packaging method thereof |
| CN109244218A (en) * | 2018-09-03 | 2019-01-18 | 东莞中之光电股份有限公司 | A kind of packaging technology of LED flip chip |
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Application publication date: 20130612 |