CN103003966A - Light emitting diode chip having wavelength conversion layer and manufacturing method thereof, and package including same and manufacturing method thereof - Google Patents

Light emitting diode chip having wavelength conversion layer and manufacturing method thereof, and package including same and manufacturing method thereof Download PDF

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Publication number
CN103003966A
CN103003966A CN2010800681366A CN201080068136A CN103003966A CN 103003966 A CN103003966 A CN 103003966A CN 2010800681366 A CN2010800681366 A CN 2010800681366A CN 201080068136 A CN201080068136 A CN 201080068136A CN 103003966 A CN103003966 A CN 103003966A
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China
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electrode
light
emitting diode
layer
stacked structure
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CN2010800681366A
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CN103003966B (en
Inventor
郑井和
金枋显
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Seoul Semiconductor Co Ltd
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Seoul Semiconductor Co Ltd
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Priority claimed from KR1020100090352A external-priority patent/KR101719642B1/en
Priority claimed from KR1020100110149A external-priority patent/KR101230619B1/en
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Priority claimed from PCT/KR2010/008647 external-priority patent/WO2011145794A1/en
Publication of CN103003966A publication Critical patent/CN103003966A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401—Structure
    • H01L2224/1403—Bump connectors having different sizes, e.g. different diameters, heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Abstract

Disclosed are a light emitting diode chip having a wavelength conversion layer, a method for manufacturing the same, and a package having the same. According to one aspect, the light emitting diode chip comprises: a substrate; a semiconductor stacked structure, which is located on an upper surface of the substrate and a gallium nitride-based compound semiconductor stacked structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an electrode which is electrically connected to the semiconductor stacked structure; an additional electrode which is formed on said electrode; and a wavelength conversion layer which covers the upper part of the semiconductor stacked structure. Further, said additional electrode passes through the wavelength conversion layer. Thus, the invention is capable of performing wavelength conversion of light, and providing a light emitting diode chip which can easily bond a wire.

Description

Have light-emitting diode die and the manufacture method thereof of wavelength conversion layer, and the packaging part and the manufacture method thereof that comprise it
Technical field
The present invention relates to light-emitting diode die and manufacture method thereof, and the packaging part and the manufacture method thereof that comprise it, relate in particular to light-emitting diode chip for backlight unit and manufacture method thereof with wavelength conversion layer, and the packaging part and the manufacture method thereof that comprise it.
Background technology
Can realize compactization, save the energy and keep for a long time the advantage in life-span because current Light-Emitting Diode has, just be used as comprising the back side light source of the various display unit of mobile phone, and because the light-emitting component that mounts Light-Emitting Diode (namely, Light-Emitting Diode encapsulation) can realize having the white light of high color rendering, thereby wait in expectation to replace such as the white light source of fluorescent lamp and be applied among the common illumination.
In addition, the various methods of utilizing Light-Emitting Diode realization white light are arranged, yet usually use the method that realizes white light by the InGaN Light-Emitting Diode that makes up the blue light that discharges 430nm～470nm and the fluorophor that described blue light can be transformed to the long wavelength.For example, white light can excite the combination that discharges yellow yellow fluorophor to realize by blue LED with by described blue LED, perhaps can realize by the combination of blue LED and green-emitting phosphor and red-emitting phosphors.
In the past, formed in the sunk area of the resin-coated packaging part in being pasted with Light-Emitting Diode of white-light luminescent component by will containing fluorophor.But along with coating resin in packaging part, having fluorophor can't distribute in resin equably, and can't form with the thickness of homogeneous the problem of resin.
Accordingly, studying the mode of on Light-Emitting Diode, pasting wavelength conversion sheet (sheet).The wavelength conversion sheet is such as fluorophor being mixed among glass etc. and form.By this wavelength conversion sheet being sticked on the upper surface of light-emitting diode, thereby can realize white light in chip-scale (chip level).
But, because the wavelength conversion sheet is pasted on the upper surface of Light-Emitting Diode, therefore be confined in the Light-Emitting Diode with structure that light mainly discharges towards the upper surface of Light-Emitting Diode, realize the situation of white light.In the side of Light-Emitting Diode, for example has in the Light-Emitting Diode of the structure of the light of the side release a great deal of of growth substrate the improper wavelength conversion that utilizes the wavelength conversion sheet.
In addition, coating when containing the resin of fluorophor in packaging part, because with Bonding coating resin after the Light-Emitting Diode, so the electrode of the Light-Emitting Diode resin that contained fluorophor covers and also can not become problem.But, when when chip-scale forms wavelength conversion layer, require after forming wavelength conversion layer, Bonding to be arrived Light-Emitting Diode.Accordingly, for by the wavelength conversion layer bonding wire, be necessary to expose electrode, and require wavelength conversion layer is formed the easily technology of bonding wire.
Summary of the invention
Technical problem
Problem to be solved by this invention is to provide a kind of light-emitting diode chip for backlight unit and the manufacture method thereof that can carry out in chip-scale the light conversion such as wavelength conversion.
Another problem to be solved by this invention is to provide a kind of light that goes out for the side release by substrate also can carry out light-emitting diode chip for backlight unit and the manufacture method thereof of wavelength conversion.
To be solved by this invention another be problematic in that provide a kind of when can carrying out the light conversion such as wavelength conversion easily the para-linkage lead-in wire carry out light-emitting diode die and the manufacture method thereof of bonding.
To be solved by this invention another is problematic in that provides a kind of light-emitting diode chip for backlight unit that can prevent the loss of generation when the light of wavelength conversion layer conversion incides light-emitting diode chip for backlight unit inside again.
To be solved by this invention another is problematic in that provides a kind of wavelength conversion layer that can relax by the light-emitting diode die of light injury.
Technical scheme
The light-emitting diode chip for backlight unit of one form comprises according to the present invention: substrate; The semiconductor stacked structure body, this semiconductor stacked structure body is the gallium nitride system compound semiconductor layer stack structure that is positioned on the described substrate, comprises the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer; Electrode is electrically connected on described semiconductor stacked structure body; Supplemantary electrode is formed on the described electrode; Wavelength conversion layer covers the top of described semiconductor stacked structure body.And then described supplemantary electrode runs through described wavelength conversion layer.By adopting described supplemantary electrode, can provide when carrying out wavelength conversion the easily light-emitting diode chip for backlight unit of bonding wire.
And described light-emitting diode chip for backlight unit can also comprise the separate layer of getting involved between described wavelength conversion layer and described semiconductor stacked structure body.Described separate layer is formed by insulating barrier.And then described separate layer can comprise distributed Bragg reflector, but also can comprise the stress relaxation layer of getting involved between described distributed Bragg reflector and described semiconductor stacked structure body.
Described separate layer is got involved between described wavelength conversion layer and described semiconductor stacked structure body, and described wavelength conversion layer is separated from described semiconductor stacked structure body.Described separate layer prevents might be because of the xanthochromia of the fluorophor in the described wavelength conversion layer that causes because of the light that discharges from the semiconductor stacked structure body.
Described distributed Bragg reflector can be by a plurality of insulating barriers (for example, the SiO that arranges that alternately refractive index is different 2/ TiO 2Or SiO 2/ Nb 2O 5) and form.Described distributed Bragg reflector makes the light transmission that generates at described active layer by adjusting the optical thickness of these insulating barriers, and is reflected in the light of described wavelength conversion layer conversion.
In addition, described stress relaxation layer relaxes the stress that causes in described distributed Bragg reflector, prevents that described distributed Bragg reflector from peeling off from the layer (for example, a semiconductor stacked structure body) of its below.Described stress relaxation layer can be formed by spin-on glasses layer (SOG) or porous silicon oxide film.
In addition, highly hard transparent resins can cover described wavelength conversion layer.At this, highly hard transparent resins refers to that Shore durometer number is the above transparent resin of 60A.
In some embodiment, described light-emitting diode chip for backlight unit can also comprise the bottom distributed Bragg reflector that is positioned at below the described substrate.Described bottom distributed Bragg reflector is not only for the light that produces in active layer, and the almost Zone Full for the visible light zone all can have relatively high reflectivity.For example, described bottom distributed Bragg reflector has reflectivity more than 90% for the light of the light of the light of blue region, green area and red area.And, can be provided with metal level on the distributed Bragg reflector of described bottom.Metal level can be formed by reflective metals.
In addition, described supplemantary electrode can have compares the narrower width of described electrode, and from described electrode more away from, variable-width must be narrower.Accordingly, described supplemantary electrode stably can be pasted on described electrode, the reliability of the technique of bonding wire after can guaranteeing.
In some embodiment, the upper side of described wavelength conversion layer in fact smooth (flat).In other embodiments, the surface texture (topology) of the upper side based semiconductor laminate structure of described wavelength conversion layer is formed uniformly.
In some embodiment, the electrode that is electrically connected on described semiconductor stacked structure body can comprise the first electrode that is electrically connected on described the first conductive-type semiconductor layer, the second electrode that is electrically connected on described the second conductive-type semiconductor layer.And described supplemantary electrode can comprise the first supplemantary electrode that is formed on described the first electrode; Be formed at the second supplemantary electrode on described the second electrode.Described the first supplemantary electrode and the second supplemantary electrode run through described wavelength conversion layer and are exposed to the outside.And the upper side of described the first supplemantary electrode and the second supplemantary electrode can be consistent with the upper side of described wavelength conversion layer.
Different therewith, the electrode that is electrically connected on described semiconductor stacked structure body can be to be electrically connected on described the first conductive-type semiconductor layer.Described the second conductive-type semiconductor layer is between described substrate and described the first conductive-type semiconductor layer.At this moment, be connected on the electrode of described the second conductive-type semiconductor layer and might do not form supplemantary electrode.
And then described wavelength conversion layer can cover the side of described substrate.Accordingly, also can carry out wavelength conversion for the light from the side release of substrate.The thickness of the wavelength conversion layer of described substrate side surfaces in fact can be identical with the thickness of the wavelength conversion layer on described semiconductor stacked structure body top.
The light-emitting diode chip for backlight unit of another form according to the present invention comprises: substrate; A plurality of semiconductor stacked structure bodies are positioned on the described substrate, comprise respectively the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer; The first electrode is electrically connected on a semiconductor stacked structure body; The second electrode is electrically connected on second half conductor layer lamination structural body; The first supplemantary electrode is formed on described the first electrode; The second supplemantary electrode is formed on described the second electrode; Wavelength conversion layer covers the top of described a plurality of semiconductor stacked structure bodies.And described the first supplemantary electrode and described the second supplemantary electrode run through described wavelength conversion layer.
And then, can also comprise the distribution of the described a plurality of semiconductor stacked structure bodies of mutual electrical connection.
In addition, described light-emitting diode chip for backlight unit can also comprise the separate layer of getting involved between described wavelength conversion layer and described a plurality of semiconductor stacked structure body.Described separate layer is formed by insulating barrier.And then described separate layer further can comprise the distributed Bragg reflector of getting involved between described wavelength conversion layer and described a plurality of semiconductor stacked structure body.And stress relaxation layer can be got involved between described distributed Bragg reflector and described a plurality of semiconductor stacked structure body.
Described the first supplemantary electrode and the second supplemantary electrode can have respectively than described the first electrode and the narrower width of the second electrode, and, described the first supplemantary electrode and the second supplemantary electrode divide take leave of described the first electrode and the second electrode far away, it is narrower that width becomes.
In addition, described the first electrode can be electrically connected on the first conductive-type semiconductor layer of a described semiconductor stacked structure body, and described the second electrode can be electrically connected on the second conductive-type semiconductor layer of described another semiconductor stacked structure body.
According to another form of the present invention, provide a kind of Light-Emitting Diode packaging part that is equipped with light-emitting diode chip for backlight unit.This packaging part comprises lead terminal, light-emitting diode chip for backlight unit and the bonding wire that connects described lead terminal and described light-emitting diode chip for backlight unit.Described bonding wire connects supplemantary electrode and the described lead terminal of described light-emitting diode chip for backlight unit.
Method for manufacturing LED chip according to another form of the present invention comprises: arrange a plurality of bare chips at supporting substrate, each described bare chip comprises substrate, semiconductor stacked structure body, is electrically connected on the electrode of described semiconductor stacked structure body, this semiconductor stacked structure body is the gallium nitride system compound semiconductor layer stack structure that is positioned on the described substrate, comprises the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer; Electrode at each described bare chip forms supplemantary electrode; Form the clear coat that covers described a plurality of bare chips and described supplemantary electrode at described supporting substrate; Remove the top of described clear coat, expose described supplemantary electrode; Remove described supporting substrate; Separate described clear coat, to be separated into independent light-emitting diode chip for backlight unit.
Because the bare chip on supporting substrate forms uniform clear coat, therefore can also form in the substrate side surfaces of bare chip uniform clear coat.And, by using supplemantary electrode, can on bare chip, form clear coat with uniform thickness, and bonding wire easily.And then, because described supporting substrate can be removed, therefore can reduce the heat dissipation path of the light that in active layer, generates.
Described clear coat can comprise multiple material according to its application target.For example, described coating is not limited to this, can comprise fluorophor or diffusion material.Accordingly, described clear coat is applicable as wavelength conversion layer or diffusion layer.
The electrode that is electrically connected on described semiconductor stacked structure body can comprise the first electrode that is electrically connected on described the first conductive-type semiconductor layer and the second electrode that is electrically connected on described the second conductive-type semiconductor layer.And the step that forms described supplemantary electrode can be included in and form the first supplemantary electrode on described the first electrode, forms the second supplemantary electrode at described the second electrode.
The upper side of described the first supplemantary electrode and the second supplemantary electrode can be positioned at equal height.Accordingly, after the top of having removed described clear coat, the upper side of clear coat can be positioned on the identical face with the upper side of described the first supplemantary electrode and the second supplemantary electrode.
In some embodiment, the step that forms described supplemantary electrode can be carried out before described bare chip is arranged in supporting substrate in advance.In other embodiments, the step that forms described supplemantary electrode can be carried out after described bare chip is arranged in supporting substrate.
And then described method also can comprise: formed the separate layer that covers a plurality of bare chips of arranging on the described supporting substrate before forming described clear coat.
Described separate layer can be formed by single insulating barrier or a plurality of insulating barrier, and can be formed by transparent resin, silicon oxide film or silicon nitride film.And described separate layer can also comprise stress relaxation layer, and described distributed Bragg reflector can be formed on the described stress relaxation layer.
In some embodiment, described bare chip can also comprise the distributed Bragg reflector that is positioned at described semiconductor stacked structure body top.And described bare chip can also comprise the stress relaxation layer of getting involved between described distributed Bragg reflector and described semiconductor stacked structure body.
In addition, remove the step of described supporting substrate and can before separating described clear coat, carry out, but be not limited to this, can also before the top of removing described clear coat, carry out, perhaps after separating described clear coat, carry out.
In some embodiment, described bare chip can comprise a plurality of semiconductor stacked structure bodies that are positioned on the described substrate.And then described bare chip can also comprise a plurality of distributions that interconnect described a plurality of semiconductor stacked structure bodies.
And described bare chip also can comprise the separate layer that is positioned at described a plurality of semiconductor stacked structure bodies top.Described separate layer can be formed by insulating barrier, and can comprise distributed Bragg reflector.And described separate layer can further comprise the stress relaxation layer of getting involved between described distributed Bragg reflector and described semiconductor stacked structure body.
Light-Emitting Diode packaging part according to another form of the present invention comprises: sub-base substrate; Possess the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer, and possess the first electrode that is electrically connected on described the first conductive-type semiconductor layer and the second electrode that is electrically connected on described the second conductive-type semiconductor layer, arrange in the above in described the first electrode and the second electrode at least one, be mounted on the bare chip on the described sub-base substrate; Expose described the first electrode of being formed at above the described bare chip and at least one in the second electrode, and the top and side of described bare chip is covered as one, and cover at least the wavelength conversion layer of the top part of described sub-base substrate.
At this, described sub-base substrate can comprise a plurality of slits that form along the side of described bare chip.
And each can have opening shape described a plurality of slits.
And described wavelength conversion layer can cover by at least a portion in described a plurality of slits the inner side of described sub-base substrate.
In addition, described sub-base substrate and described bare chip can carry out metal bonding.
And described Light-Emitting Diode packaging part also comprises: be formed with power supply for the substrate of using lead-in wire; Be electrically connected described power supply for using the bonding wire of lead-in wire with described the first electrode and described the second electrode; Seal the lens of described bare chip.
Manufacture method according to the Light-Emitting Diode packaging part of another form of the present invention comprises the steps: to prepare sub-base substrate; The a plurality of bare chips that comprise respectively the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer are mounted on the described sub-base substrate; Formation is electrically connected on the first electrode of described the first conductive-type semiconductor layer, and forms the second electrode that is electrically connected on described the second conductive-type semiconductor layer; Top described the first electrode of being formed at described bare chip and at least one in the second electrode are exposed in formation, the top and side of described bare chip is covered as one, and covers at least the wavelength conversion layer of the top part of described sub-base substrate.
At this, the step that forms described the first electrode and the second electrode can comprise step: in described the first electrode and the second electrode at least one is formed at above the described bare chip.
In addition, the manufacture method of described Light-Emitting Diode packaging part further can comprise step: utilize mould to described the first electrode and the pressurization of the second electrode, to avoid producing the slit between described mould and described the first electrode and the second electrode.
At this, the step that forms described wavelength conversion layer can comprise step: inject in the inner space of described mould and contain the resin of fluorophor and be cured.
In addition, the step of preparing described sub-base substrate can comprise step: form a plurality of slits along the zone that mounts described bare chip.
At this, described a plurality of slits can form respectively opening shape.
And the step that forms described wavelength conversion layer can comprise step: described wavelength conversion layer is formed the inner side that covers described sub-base substrate by a part of slit in described a plurality of slits.
And the manufacture method of described light emission diode package member also can comprise step: form transparent resin layer between described wavelength conversion layer and described bare chip.
In addition, the manufacture method of described Light-Emitting Diode packaging part also comprises step: described sub-base substrate is cut take independent light-emitting diode die as unit.
At this, the manufacture method of described Light-Emitting Diode packaging part can also comprise step: mount the described independent bare chip that is cut at the substrate with lead-in wire; Described the first electrode and the second electrode are electrically connected with bonding wire respectively; The lens of described independent light-emitting diode chip for backlight unit are sealed in formation.
Technique effect
According to the present invention, can provide the wavelength conversion of light-emitting diode chip for backlight unit also can carry out to(for) the light of the side release by substrate.
And, can provide by adopting supplemantary electrode, when carrying out wavelength conversion, can also easily carry out the light-emitting diode chip for backlight unit of Bonding.
And, according to the present invention, by adopting separate layer, can prevent that the fluorophor in the wavelength conversion layer from sustaining damage because of the light that discharges in the semiconductor stacked structure body.
And described separate layer comprises distributed Bragg reflector, can prevent from again inciding semiconductor stacked structure body inside at the light of wavelength conversion layer conversion, can improve optical efficiency accordingly.
Description of drawings
The cutaway view of the light-emitting diode chip for backlight unit that is used for explanation one embodiment of the invention and provides is provided Fig. 1.
Fig. 2 is for being used for illustrating the cutaway view of the light-emitting diode chip for backlight unit that provides according to another embodiment of the present invention.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Fig. 3.
The cutaway view of the light-emitting diode chip for backlight unit that is used for explanation further embodiment of this invention and provides is provided Fig. 4.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Fig. 5.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Fig. 6.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Fig. 7.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Fig. 8.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Fig. 9.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Figure 10.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Figure 11.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Figure 12.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Figure 13.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Figure 14.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Figure 15.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Figure 16.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Figure 17.
The cutaway view of the light-emitting diode die that is used for explanation further embodiment of this invention and provides is provided Figure 18.
Figure 19 is the cutaway view for the light emission diode package member that the light-emitting diode chip for backlight unit that lift-launch one embodiment of the invention provides is described.
A plurality of cutaway views of the method for manufacturing LED chip that is used for explanation one embodiment of the invention and provides are provided Figure 20.
The upper plane figure of the Light-Emitting Diode that is used for explanation further embodiment of this invention and provides is provided Figure 21.
Figure 22 illustrates the figure of section that observes the light-emitting diode of Figure 21 from C-C ' line.
Figure 23 illustrates the figure that forms the sub-installation base plate of a plurality of light-emitting diodes according to one embodiment of the invention.
Figure 24 is for amplifying the figure in the zone that represents with circle among Figure 23.
Figure 25 is the flow chart for the manufacture method that the light emission diode package member that one embodiment of the invention provides is described.
The figure of the manufacture method of the Light-Emitting Diode packaging part that one embodiment of the invention is shown respectively according to step provides is provided Figure 26.
Figure 27 is the cutaway view for the Light-Emitting Diode packaging part that the light-emitting diode that lift-launch one embodiment of the invention provides is described.
The cutaway view of the light-emitting diode that is used for the explanation another embodiment of the present invention and provides is provided Figure 28.
Embodiment
Below, each embodiment that present invention will be described in detail with reference to the accompanying.The embodiment that below introduces provides as example, so that thought of the present invention is passed to those skilled in the art fully.Therefore, the present invention is not limited to the embodiment of following explanation, can be embodied as other forms.And in the drawings, the width of inscape, length, thickness etc. also might be represented turgidly, with convenient explanation.In whole specification, identical Reference numeral represents identical inscape.
The cutaway view of the light-emitting diode chip for backlight unit 101 that is used for explanation one embodiment of the invention and provides is provided Fig. 1.
Light-emitting diode chip for backlight unit 101 comprises: substrate 21; The gallium nitride based semiconductor stacked structure body 30 that comprises the first conductive-type semiconductor layer 25, active layer 27 and the second conductive-type semiconductor layer 29; The first electrode 41; The second electrode 42; The first supplemantary electrode 43; The second supplemantary electrode 44 and clear coat (for example, wavelength conversion layer 50).And, can get involved resilient coating 23 between the first conductive-type semiconductor layer 25 and the substrate 21.
Substrate 21 has the residing upper surface of semiconductor stacked structure body, with the lower surface of described upper surface opposite direction, be connected the side of upper surface and lower surface.Substrate 21 so long as transparency carrier then have no particular limits, can be can the growing nitride semiconductor layer substrate (for example, sapphire, carborundum, spinelle or silicon etc.).Substrate 21 can be thicker with respect to the semiconductor stacked structure body, and the part of the light that generates on the semiconductor stacked structure body can be by the side release of substrate 21.
Described active layer 27, described the first and second conductive-type semiconductor layers 25,29 can by the compound semiconductor of III-N series, for example, be formed by (Al, Ga, In) N semiconductor.Described the first and second conductive-type semiconductor layers 25,29 can be respectively single or multiple lift.For example, described the first conductive-type semiconductor layer 25 and/or the second conductive-type semiconductor layer 29 can comprise contact layer and coating layer (Clad layer), but also can comprise superlattice layer.And described active layer 27 can be single quantum or multi-quantum pit structure.For example, described the first conductive-type semiconductor layer can be N-shaped, and described the second conductive-type semiconductor layer can be p-type, but is not limited to this, can be in contrast.Resilient coating 23 relaxes lattice mismatch between substrate 21 and the first conductive-type semiconductor layer 25, reduce the defect concentration that produces within semiconductor layer 25,27,29.
In addition, the first electrode 41 be contacted with the first conductive-type semiconductor layer 25 exposure the surface and be electrically connected with the first conductive-type semiconductor layer 25.And the second electrode 42 is positioned at the top of the second conductive-type semiconductor layer 29 and is electrically connected with the second conductive-type semiconductor layer 29.The first electrode 41 and the second electrode 42 for example can comprise Ti, Cu, Ni, Al, Au or Cr, also can be formed by the plural material among Ti, Cu, Ni, Al, Au or the Cr.And, for electric current disperses, can be formed on the second conductive-type semiconductor layer 29 such as the transparency conducting layer of Ni/Au, ITO, IZO, ZnO, the second electrode 42 can be connected in described transparency conducting layer.
The first supplemantary electrode 43 and the second supplemantary electrode 44 lay respectively on the first electrode 41 and the second electrode 42.The first supplemantary electrode 43 has the narrower width of width of comparing the first electrode 41 and the second electrode 42 with the second supplemantary electrode 44.That is, the first supplemantary electrode 43 is defined to the top of the first electrode 41, and the second supplemantary electrode 44 is defined to the top of the second electrode 42.And the first supplemantary electrode 43 and the second supplemantary electrode 44 can have far away apart from the first electrode 41 and the second electrode 42 respectively, then the narrower shape of width.Based on this shape, the first supplemantary electrode 43 and the second supplemantary electrode 44 can stably be pasted on respectively the first electrode 41 and the second electrode 42 and keep, and are conducive to the subsequent techniques such as Bonding.For the first supplemantary electrode 43 and the second supplemantary electrode 44 can stably be remained on respectively on the first electrode 41 and the second electrode 42, the ratio with respect to the height of bottom surface can be limited within the preset range.
Wavelength conversion layer 50 can include into fluorophor at epoxy resin or silica gel and form, and perhaps can only be formed by fluorophor.For example, wavelength conversion layer 50 can form its coating after epoxy resin or silica gel include into fluorophor.At this moment, can use mould, form the wavelength conversion layer 50 with uniform thickness with the side at substrate 21.At this moment, mould can be arranged to make the whole or local exposure of the upper surface of the first supplemantary electrode 43 and the second supplemantary electrode 44, form thus wavelength conversion layer 50, the resin-coated one-tenth that contains fluorophor is covered after the first supplemantary electrode 43 and the second supplemantary electrode 44, resin is carried out mechanical lapping, can expose thus the upper surface of the first supplemantary electrode 43 and the second supplemantary electrode 44.Accordingly, can form the smooth wavelength conversion layer of upper surface 50, and the first supplemantary electrode 43 and the second supplemantary electrode 44 connect wavelength conversion layers 50 and are exposed to the outside.
And then wavelength conversion layer 50 for example can have the refractive index within 1.4～2.0 scopes, and in order to adjust refractive index, can sneak into TiO within wavelength conversion layer 50 2, SiO 2, Y 2O 3In powder.
In addition, as shown in the figure, the upper surface of the first supplemantary electrode 43 can be positioned at the upper surface of the second supplemantary electrode 44 identical height.Accordingly, when exposing the first conductive-type semiconductor layer 25 in a part of removing the second conductive-type semiconductor layer 29 and active layer 27, as shown in the figure, the first supplemantary electrode 43 comparable the second supplemantary electrodes 44 are longer.
But the side of wavelength conversion layer 50 covered substrates 21 and the top of semiconductor stacked structure body 30.Accordingly, can provide not only the light that discharges for the upper surface by semiconductor stacked structure body 30, still can carry out the light-emitting diode chip for backlight unit 101 of wavelength conversion for the light of the side release by substrate 21.
The cutaway view of the light-emitting diode chip for backlight unit 102 that is used for the explanation another embodiment of the present invention and provides is provided Fig. 2.
With reference to Fig. 2, the light-emitting diode chip for backlight unit 102 that present embodiment provides is roughly similar with the light-emitting diode chip for backlight unit 101 of Fig. 1 haply, and difference is further to comprise separate layer 33, bottom distributed Bragg reflector 45 and metal level 47.And transparency conducting layer 31 is got involved between the second conductive-type semiconductor layer 29 of described separate layer 33 and described semiconductor stacked structure body 30.The second electrode 42 can be connected in described transparency conducting layer 31.For fear of repetition, will omit detailed explanation for the inscape identical with the light-emitting diode die 101 of the embodiment of above stated specification.
Separate layer 33 can cover the top of described semiconductor stacked structure body 30 and transparency conducting layer 31.According to described separate layer 33, described wavelength conversion layer 50 separates from semiconductor stacked structure body 30.Separate layer 33 can be formed by for example silicon nitride or silica.And described separate layer 33 can be by insulating barrier (for example, the SiO that alternately stacked refractive index is different 2/ TiO 2Or SiO 2/ Nb 2O 5) distributed Bragg reflector form.At this moment, by adjusting the optical thickness of the different insulating barrier of refractive index, described separate layer 33 can make the light transmission that generates at active layer 27, and reflection is from outside incident or by the light of wavelength conversion layer 50 conversion.This distributed Bragg reflector has the light in the long wavelength zone in the reflection visible light zone, and makes short wavelength's visible light or the ultraviolet reflection bandwidth that sees through that generates at active layer 27.Especially, owing to compare TiO 2, Nb 2O 5The absorptivity less, therefore in order to prevent light loss, more preferably utilize SiO 2/ Nb 2O 5Form distributed Bragg reflector.
In addition, be provided with bottom distributed Bragg reflector 45 in the bottom of described substrate 21.Described bottom distributed Bragg reflector 45 is to form by the mutually different insulating barrier of stacked refractive index alternately, not only for the light of blue wavelength region (for example, the light that in active layer 27, generates), also for the light in yellow wavelengths zone or the light in green and/or red wavelength zone, also has the reflectivity of relatively high (being preferably more than 90%).And then described bottom distributed Bragg reflector 45 also can for example have the emissivity more than 90% on the whole within the wave-length coverage of 400～700nm.
The bottom distributed Bragg reflector 45 that has relatively high reflectivity in wide wavelength region may is to form by controlling repeatedly the optical thickness separately of stacked material layer.Described bottom distributed Bragg reflector 45 is for example alternately stacked by SiO 2The ground floor that consists of and by TiO 2The second layer that consists of and forming, perhaps alternately stacked by SiO 2The ground floor that consists of and by Nb 2O 5The second layer that consists of and forming.Because Nb 2O 5Absorptivity compare TiO 2Therefore less is more preferably alternately arranged by SiO 2The ground floor that consists of and by Nb 2O 5The second layer that consists of.The stacked number of ground floor and the second layer is more, and the reflectivity of distributed Bragg reflector 45 is more stable, and for example, the stacked number of distributed Bragg reflector 40 can be more than 50 layers, namely more than 25 pairs.
Alternately stacked a plurality of ground floors or the second layer need not all have identical thickness, and the thickness of a plurality of ground floors and the second layer is chosen as the light of being not only for generating in the active layer 27, also have relatively high reflectivity for other wavelength in visible light zone.And, for the specific wavelength bandwidth, can much higher distributed Bragg reflector of stacked reflectivity and form described bottom distributed Bragg reflector 45.
By adopting described bottom distributed Bragg reflector 45, when the light in wavelength conversion layer 50 conversion incided substrate 21 side again, the light of this incident of secondary reflection and be discharged into the outside can improve optical efficiency accordingly again.
In addition, the ground floor of described distributed Bragg reflector 45 and last one deck can be SiO 2By with SiO 2Be arranged in ground floor and last one deck of distributed Bragg reflector 45, distributed Bragg reflector 45 stably can be pasted on the substrate 21, and can utilize described last SiO 2Layer protection bottom distributed Bragg reflector 45.
Metal level 47 is positioned at the bottom of described bottom distributed Bragg reflector 45.Described metal level 47 can be formed by the reflective metals such as aluminium in order to reflect the light that has seen through bottom distributed Bragg reflector 4, but also can be formed by the metal outside the reflective metals.Especially, therefore the thermal release that metal level 47 helps laminate structure 30 is produced improves the exothermicity of light-emitting diode chip for backlight unit 102 to outside.
According to present embodiment, form separate layer 33 by the distributed Bragg reflector that is had high reflectance by the visible light for the long wavelength, can prevent from again inciding within the semiconductor stacked structure body 30 at the light of wavelength conversion layer 50 conversion.And, by adopting bottom distributed Bragg reflector 45, when inciding substrate 21 sides from the outside or when the light of wavelength conversion layer 50 conversion incides substrate 21 side, can be again with its reflection, thus can improve optical efficiency.
The cutaway view of the light-emitting diode chip for backlight unit 103 that is used for the explanation another embodiment of the present invention and provides is provided Fig. 3.
With reference to Fig. 3, light-emitting diode chip for backlight unit 103 is with similar with reference to the light-emitting diode chip for backlight unit 102 of Fig. 2 explanation, and difference is further arranging on the described separate layer 30 or replacing described separate layer 30 to get involved stress relaxation layer 35 and described distributed Bragg reflector 37 between wavelength conversion layer 50 and semiconductor stacked structure body 30.That is, stress relaxation layer 35 can be positioned at semiconductor stacked structure body 30 upsides (for example, on the separate layer 33), and at the upside of stress relaxation layer 35 top distributed Bragg reflector 37 is set.Described stress relaxation layer 35 and described top distributed Bragg reflector 37 also play the effect of separate layer.
Described top distributed Bragg reflector 37 can be by different a plurality of insulating barriers (for example, the SiO of alternately laminated refractive index 2/ TiO 2Or SiO 2/ Nb 2O 5) and form.At this moment, by adjusting the optical thickness of the different a plurality of insulating barriers of refractive index, described top distributed Bragg reflector 37 can make the light transmission that generates at active layer 27, and reflection is from outside incident or at the light of wavelength conversion layer 50 conversion.Described top distributed Bragg reflector 37 has the light in the long wavelength zone in the reflection visible light zone, and makes short wavelength's visible light or the ultraviolet reflection bandwidth that sees through that generates at active layer 27.Especially, because Nb 2O 5Absorptivity compare TiO 2Less therefore in order to prevent light loss, more preferably utilizes SiO 2/ Nb 2O 5Form distributed Bragg reflector.
In addition, stress relaxation layer 35 can be formed by spin-on glasses layer (SOG) or porous silicon oxide film.Described stress relaxation layer 35 relaxes the stress of described top distributed Bragg reflector 37, prevents peeling off of top distributed Bragg reflector 37.
As different a plurality of insulating barriers (for example, the SiO of alternately laminated refractive index 2/ TiO 2Or SiO 2/ Nb 2O 5) when forming top distributed Bragg reflector 37, because stacked a plurality of relatively highdensity layer, so the stress that produces in the distributed Bragg reflector becomes large.Accordingly, distributed Bragg reflector is peeled off from the layer (for example, separate layer 33) of its downside easily.Therefore, by stress relaxation layer 35 being arranged in the downside of top distributed Bragg reflector 37, can prevent peeling off of top distributed Bragg reflector 37.
In addition, in the present embodiment, described separate layer 33 can form individual layer (for example, being formed by silicon nitride or silica), also can be omitted.
The cutaway view of the light-emitting diode chip for backlight unit 104 that is used for the explanation another embodiment of the present invention and provides is provided Fig. 4.
With reference to Fig. 4, be illustrated as example take horizontal type light-emitting diode chip for backlight unit 101,102,103 among Fig. 1 to Fig. 3 in front, but described light-emitting diode chip for backlight unit 104 is the vertical type light emitting diode chip.Described light-emitting diode chip for backlight unit 104 comprises: substrate 51; The semiconductor stacked structure 30 that possesses the first conductive-type semiconductor layer 25, active layer 27 and the second conductive-type semiconductor layer 29; Upper electrode 41; Supplemantary electrode 43 and wavelength conversion layer 60.Described wavelength conversion layer 60 can separate from semiconductor stacked structure body 30 according to separate layer.For example, described separate layer can comprise the separate layer 33 such as reference Fig. 2 explanation, but also can such as the explanation of Fig. 3, comprise separate layer 33, stress relaxation layer 35 and/or top distributed Bragg reflector 37.And then described light-emitting diode chip for backlight unit 104 can comprise reflective metal layer 55, barrier metals layer 57 and bonding metal 53.
Substrate 51 is different from for grown semiconductor layer 25,27,29 growth substrate, is to be pasted on the compound semiconductor layer 25,27 of having grown, 29 secondary substrate.Described substrate 51 can be conductivity type substrate (for example, metal substrate or semiconductor substrate) but be not limited to this, also can be such as sapphire insulated substrate.
Semiconductor stacked structure body 30 is positioned on the substrate 51, comprises the first conductive-type semiconductor layer 25, active layer 27 and the second conductive-type semiconductor layer 29.At this, described semiconductor stacked structure body 30 is identical with general vertical type light emitting diode, and p-type compound semiconductor layer 29 is compared N-shaped compound semiconductor layer 25 more near substrate 51 sides.Described semiconductor stacked structure body 30 can be positioned on a part of zone of substrate 51.That is, substrate 51 has the area wider with respect to semiconductor stacked structure body 30, and semiconductor stacked structure body 30 can be positioned at by within the zone of the surrounded by edges of described substrate 51.
Because therefore described the first conductive-type semiconductor layer 25, active layer 27 and the second conductive-type semiconductor layer 29 omit detailed explanation with similar with reference to the semiconductor layer of Fig. 1 explanation.In addition, be positioned at the opposition side of substrate 51 by making the relatively little N-shaped compound semiconductor layer 25 of resistance, can form coarse surface in the upper side of N-shaped compound semiconductor layer 25.
Can get involved reflective metal layer 55 between described substrate 51 and the semiconductor stacked structure body 30, barrier metals layer 57 can be got involved between substrate 51 and reflective metal layer 55 and surround reflective metal layer 55.And then described substrate 51 can be bonded on the semiconductor stacked structure body 30 by bonding metal 53.Described reflective metal layer 55 and described barrier metals layer 57 can play the effect of the lower electrode that is electrically connected on described the second conductive-type semiconductor layer 29.
In addition, described semiconductor stacked structure body 30 tops are provided with wavelength conversion layer 60.The position of described wavelength conversion layer 60 can be defined in described semiconductor stacked structure body 30 tops, but is not limited to this, can also be arranged on the side of described semiconductor stacked structure body 30, and then covers the side of described substrate 51.
Separate layer 33 covers the upper side of semiconductor stacked structure body 30, and can set gradually stress relaxation layer 35 and top distributed Bragg reflector 37 on separate layer 33.Described insulating barrier 33, stress relaxation layer 35 and top distributed Bragg reflector 37 can adopt the material identical with the insulating barrier that describes with reference to Fig. 3, stress relaxation layer and top distributed Bragg reflector, therefore for fear of repetition, omit detailed explanation.And described separate layer 33 also can be omitted.And as illustrating among the embodiment of Fig. 2, described separate layer 33 can be distributed Bragg reflector, and at this moment, stress relaxation layer 35 and top distributed Bragg reflector 37 can be omitted.
In addition, upper electrode 41 is positioned at semiconductor stacked structure body 30, and for example on the first conductive-type semiconductor 25 and be electrically connected with the first conductive-type semiconductor layer 25, supplemantary electrode 43 is positioned on the described upper electrode 41.Described supplemantary electrode 43 can have with the front with reference to the first supplemantary electrode 43 of Fig. 1 explanation or the second supplemantary electrode 44 identical shape and structure.Described supplemantary electrode 43 is exposed to the outside by described wavelength conversion layer 60.
The cutaway view of the light-emitting diode chip for backlight unit 105 that is used for explanation further embodiment of this invention and provides is provided Fig. 5.
With reference to Fig. 5, Light-Emitting Diode 105 is with roughly similar with reference to the light-emitting diode chip for backlight unit 101 of Fig. 1 explanation, and difference is that wavelength conversion layer 50 separates from semiconductor stacked structure body 30.That is, intervention has separate layer 61 between wavelength conversion layer 50 and semiconductor stacked structure body 30.
Along with wavelength conversion layer 50 separates from semiconductor stacked structure body 30, can prevent that the resin of wavelength conversion layer 50 or fluorophor from occuring deteriorated because of the light that generates in active layer 27.Separate layer 61 can also be got involved between the side of substrate 21 and wavelength conversion layer 50.
Described separate layer 61 can be formed by transparent resin, silicon oxide film, silicon nitride film.In order to reduce the heat that transmits to fluorophor, the thermal conductivity of described separate layer 61 is more low more favourable, for example can have the thermal conductivity less than 3W/mK.And, when described separate layer 61 is formed by transparent resin, in order to adjust the refractive index of transparent resin, can in transparent resin, sneak into TiO 2, SiO 2, Y 2O 3In powder.And then described separate layer 61 not only can form individual layer, can also form a plurality of layers.Make the light transmission that produces at active layer 27 by adjust consisting of a plurality of layers refractive index and the thickness of described separate layer 61, separate layer 61 can being formed, and be reflected in wavelength conversion layer 50 conversion and incide light within the light-emitting diode chip for backlight unit 105.For example, can pass through repeatedly different a plurality of layer (for example, the TiO of stacked refractive index 2And SiO 2), form and optionally make the light transmission that generates at active layer 27 or the distributed Bragg reflector that is reflected in the light of wavelength conversion layer 43 conversion.And then, when described separate layer 61 comprises distributed Bragg reflector, in order to prevent that described distributed Bragg reflector is stripped from, can between semiconductor stacked structure body 30 and described distributed Bragg reflector, get involved the stress relaxation layer 62 as the example of the light-emitting diode die 106 of Fig. 6.
The cutaway view of the light-emitting diode die 107 that is used for explanation further embodiment of this invention and provides is provided Fig. 7.
With reference to Fig. 7, light-emitting diode chip for backlight unit 106 is with roughly similar with reference to the light-emitting diode chip for backlight unit 105 of Fig. 5 explanation, and difference is further to comprise separate layer 33, bottom distributed Bragg reflector 45 and metal level 47.And transparency conducting layer 31 is got involved between the second conductive-type semiconductor layer 29 of described separate layer 33 and described semiconductor stacked structure body 30.The second electrode 42 can be connected in described transparency conducting layer 31.Described separate layer 61 covers separate layer 33, makes wavelength conversion layer 50 more away from semiconductor stacked structure body 30.And then, when described separate layer 61 is distributed Bragg reflector, in order to prevent peeling off of described separate layer 61, can between separate layer 61 and semiconductor stacked structure body 30, get involved stress relaxation layer 62 as shown in Figure 6.
Described separate layer 33, bottom distributed Bragg reflector 45 and metal level 47 are identical with the separate layer that describes with reference to Fig. 2, bottom distributed Bragg reflector and metal level, therefore for fear of repetition, omit detailed explanation.And then as reference Fig. 3 explanation, top distributed Bragg reflector 37 and stress relaxation layer 35 can be positioned at the top of semiconductor stacked structure body 30, accordingly described wavelength conversion layer 50 semiconductor stacked structure body 30 further away from each other.
The cutaway view of the light-emitting diode die 108 that is used for the explanation another embodiment of the present invention and provides is provided Fig. 8.
With reference to Fig. 8, light-emitting diode chip for backlight unit 107 is with roughly similar with reference to the light-emitting diode die 105 of Fig. 5 explanation, and difference is to have increased transparent resin 63 at wavelength conversion layer 50.That is, transparent resin 63 covers wavelength conversion layer 50.Transparent resin 63 protection fluorophor are avoided the impact of outside moisture.In order to prevent absorbing moisture, described transparent resin 63 is preferably has high rigidity (for example, Shore durometer number is more than the 60A).When described highly hard transparent resins 63 is formed by transparent resin at separate layer 61, can have and compare the higher hardness number of separate layer 61.
And then, in order to adjust the refractive index of described highly hard transparent resins 63, can within transparent resin 63, sneak into TiO 2, SiO 2, Y 2O 3In powder.
The cutaway view of the light-emitting diode chip for backlight unit 109 that is used for explanation further embodiment of this invention and provides is provided Fig. 9.
With reference to Fig. 9, described light-emitting diode die 109 is with roughly similar with reference to the light-emitting diode chip for backlight unit 108 of Fig. 8 explanation, and difference is further to comprise separate layer 33, bottom distributed Bragg reflector 45, metal level 47.And getting involved between the second conductive-type semiconductor layer 29 of described separate layer 33 and described semiconductor stacked structure body 30 has transparency conducting layer 31.The second electrode 42 can be connected in described transparency conducting layer 31.Described separate layer 61 covers separate layers 33, so that wavelength conversion layer 50 semiconductor stacked structure body 30 further away from each other.
Described separate layer 33, bottom distributed Bragg reflector 45 and metal level 47 are identical with reference to separate layer, bottom distributed Bragg reflector and the metal level of Fig. 2 explanation with the front, therefore for fear of repetition, omit detailed explanation.And then as reference Fig. 3 explanation, top distributed Bragg reflector 37 and stress relaxation layer 35 can be positioned at the top of semiconductor stacked structure body 30, accordingly described wavelength conversion layer 50 semiconductor stacked structure body 30 further away from each other.
The cutaway view of the light-emitting diode chip for backlight unit 110 that is used for explanation further embodiment of this invention and provides is provided Figure 10.
With reference to Figure 10, described light-emitting diode chip for backlight unit 110 is with roughly the same with reference to the light-emitting diode chip for backlight unit 101 of Fig. 1 explanation, and difference is that the upper surface of the first supplemantary electrode 43 is lower than the upper surface of the second supplemantary electrode 44.
Accordingly, although the upper surface general planar of wavelength conversion layer 70, it is poor to have ladder near the first supplemantary electrode 43.Wavelength conversion layer 70 with this structure can utilize along the special Mold Making of the surface configuration of semiconductor stacked structure body.
The cutaway view of the light-emitting diode chip for backlight unit 111 that is used for explanation further embodiment of this invention and provides is provided Figure 11.
With reference to Figure 11, described light-emitting diode chip for backlight unit 111 is with roughly similar with reference to the light-emitting diode chip for backlight unit 110 of Figure 10 explanation, and difference is further to comprise separate layer 33, bottom distributed Bragg reflector 45 and metal level 47.And transparency conducting layer 31 is got involved between the second conductive-type semiconductor layer 29 of described insulating barrier 33 and described semiconductor stacked structure body 30.The second electrode 42 can be connected in described transparency conducting layer 31.
Described separate layer 33, bottom distributed Bragg reflector 45 and metal level 47 are identical with reference to separate layer, bottom distributed Bragg reflector and the metal level of Fig. 2 explanation with the front, therefore for fear of repetition, omit detailed explanation.And then, as reference Fig. 3 explanation, between described wavelength conversion layer 70 and semiconductor stacked structure body 30, can get involved stress relaxation layer 35 and top distributed Bragg reflector 37.
The cutaway view of the light-emitting diode chip for backlight unit 112 that is used for explanation further embodiment of this invention and provides is provided Figure 12.
With reference to Figure 12, described light-emitting diode chip for backlight unit 112 is with roughly similar with reference to the light-emitting diode chip for backlight unit 110 of Figure 10 explanation, and difference is that wavelength conversion layer 70 separates from semiconductor stacked structure body 30.That is, as reference Fig. 5 explanation, getting involved between wavelength conversion layer 70 and semiconductor stacked structure body has separate layer 71.Along with wavelength conversion layer 70 separates from the semiconductor stacked structure body, can prevent that the resin of wavelength conversion layer 70 or fluorophor from occuring deteriorated because of the light that generates at active layer 27.Separate layer 71 can also be got involved between the side of substrate 21 and wavelength conversion layer 70.
And when described separate layer 71 comprised distributed Bragg reflector, the stress relaxation layer 62 as reference Fig. 6 explanation can be got involved between separate layer 71 and semiconductor stacked structure body 30.
The cutaway view of the light-emitting diode chip for backlight unit 113 that is used for explanation further embodiment of this invention and provides is provided Figure 13.
With reference to Figure 13, described light-emitting diode chip for backlight unit 113 is with roughly similar with reference to the light-emitting diode chip for backlight unit 112 of Figure 12 explanation, and difference is further to comprise separate layer 33, bottom distributed Bragg reflector 45 and metal level 47.And transparency conducting layer 31 is got involved between the second conductive-type semiconductor layer 29 of described insulating barrier 33 and described semiconductor stacked structure body 30.The second electrode 42 can be connected in described transparency conducting layer 31.Described separate layer 71 covers insulating barrier 33 makes further away from each other semiconductor stacked structure body 30 of wavelength conversion layer 70.
Described separate layer 33, bottom distributed Bragg reflector 45 and metal level 47 are identical with reference to separate layer, bottom distributed Bragg reflector and the metal level of Fig. 2 explanation with the front, therefore for fear of repetition, omit detailed explanation.And then as reference Fig. 3 explanation, top distributed Bragg reflector 37 and stress relaxation layer 35 can be positioned at the top of semiconductor stacked structure body 30, accordingly described wavelength conversion layer 70 semiconductor stacked structure body 30 further away from each other.
The cutaway view of the light-emitting diode die 114 that is used for the explanation another embodiment of the present invention and provides is provided Figure 14.
With reference to Figure 14, light-emitting diode chip for backlight unit 114 is with roughly similar with reference to the light-emitting diode die of Figure 12 explanation, and difference is to have increased transparent resin 73 at wavelength conversion layer 70.That is, transparent resin 73 covers wavelength conversion layer 70.Transparent resin 73 protection fluorophor are avoided the impact of outside moisture.In order to prevent absorbing moisture, described transparent resin 73 is preferably has high rigidity (for example, Shore durometer number is more than the 60A).When described highly hard transparent resins 73 is formed by transparent resin at separate layer 71, can have and compare the higher hardness number of separate layer 71.
And then, in order to adjust the refractive index of described highly hard transparent resins 73, can within transparent resin 73, sneak into TiO 2, SiO 2, Y 2O 3In powder.
The cutaway view of the light-emitting diode chip for backlight unit 115 that is used for explanation further embodiment of this invention and provides is provided Figure 15.
With reference to Figure 15, described light-emitting diode chip for backlight unit 115 is with roughly similar with reference to the light-emitting diode chip for backlight unit 114 of Figure 14 explanation, and difference is further to comprise separate layer 33, bottom distributed Bragg reflector 45 and metal level 47.And transparency conducting layer 31 is got involved between the second conductive-type semiconductor layer 29 of described separate layer 33 and described semiconductor stacked structure body 30.The second electrode 42 can be connected in described transparency conducting layer 31.Described separate layer 71 covers separate layer 33 makes further away from each other semiconductor stacked structure body 30 of wavelength conversion layer 50.
Described separate layer 33, bottom distributed Bragg reflector 45 and metal level 47 are identical with reference to separate layer, bottom distributed Bragg reflector and the metal level of Fig. 2 explanation with the front, therefore for fear of repetition, omit detailed explanation.And then as reference Fig. 3 explanation, top distributed Bragg reflector 37 and stress relaxation layer 35 can be positioned at the top of semiconductor stacked structure body 30, accordingly described wavelength conversion layer 70 semiconductor stacked structure body 30 further away from each other.
Figure 16 is for being used for explanation according to the cutaway view of the light-emitting diode chip for backlight unit 116 of further embodiment of this invention manufacturing.
With reference to Figure 16, light-emitting diode chip for backlight unit 116 is with roughly similar with reference to the light-emitting diode chip for backlight unit 101 of Fig. 1 explanation, and difference is to be provided with a plurality of semiconductor stacked structure bodies 30 at substrate 21.A plurality of semiconductor stacked structure bodies can be electrically connected to each other by a plurality of distributions 83.A plurality of distributions 83 connect the first conductive-type semiconductor layer 25 of a semiconductor stacked structure body 30 and the second conductive-type semiconductor layer 29 of adjacent semiconductor stacked structure body 30 therewith, can form join-matrix thus, and a plurality of this join-matrix can parallel connection or anti-parallel connection connection.
In addition, for the first conductive-type semiconductor layer 25 and the second conductive-type semiconductor layer 29 that prevents the semiconductor stacked structure body forms short circuit because of distribution 39, can between semiconductor stacked structure body and distribution 83, get involved insulating barrier 81.Described insulating barrier 81 also plays the function that makes a plurality of semiconductor stacked structure bodies 30 and wavelength conversion layer 50 separate layers spaced apart from each other.
In addition, the first electrode 41 and the second electrode 42 can lay respectively on the mutually different semiconductor stacked structure body 30.And, in the present embodiment, for the not special restriction in the formation position of the first electrode 41 and the second electrode 42.For example, the first electrode 41 and the second electrode 42 can all be formed on the substrate 21, also can be formed on the first conductive-type semiconductor layer 25 or the second conductive-type semiconductor layer 29.At this moment, described the first electrode 41 and the second electrode 42 can be connected on the mutually different semiconductor stacked structure body 30 by distribution 83.On described the first electrode 41 and the second electrode 42, arrange respectively the first supplemantary electrode 43 and the second supplemantary electrode 44.
Wavelength conversion layer 50 covers described a plurality of semiconductor stacked structure bodies 30.Wavelength conversion layer 50 is gone back the side of covered substrate 21.As reference Fig. 5 explanation, wavelength conversion layer 50 can separate from the semiconductor stacked structure body according to separate layer 61.
The cutaway view of the light-emitting diode chip for backlight unit 117 that is used for explanation further embodiment of this invention and provides is provided Figure 17.
With reference to Figure 17, light-emitting diode die 117 is with roughly similar with reference to the light-emitting diode chip for backlight unit 115 of Figure 16 explanation, difference is further to comprise the second insulating barrier 85, bottom distributed Bragg reflector 45 and metal level 47, in order to be easy to form distribution 81, the forming of described semiconductor stacked structure body 30 laterally inclinedly.And, between insulating barrier 81 and each semiconductor stacked structure body 30, being provided with transparency conducting layer 31, transparency conducting layer 31 ohmic contact are in the second conductive-type semiconductor layer 29.Distribution 83 is connected in the first conductive-type semiconductor layer 25 of a semiconductor stacked structure body 30 therewith on second conductive-type semiconductor layer 29 (perhaps transparency conducting layer 31) of adjacent semiconductor stacked structure body 30, can form join-matrix thus, and this join-matrix can parallel connection or anti-parallel connection connection.
In addition, insulating barrier 81 can cover transparency conducting layer 31, and then can cover the side of semiconductor stacked structure body 30.And, can cover semiconductor stacked structure body 30 and a plurality of distribution 83 in order to protect semiconductor stacked structure body 30 and a plurality of distribution 83, the second insulating barriers 85, and the second insulating barrier 85 covers insulating barrier 83.Described insulating barrier 81 can be formed by the material film (for example, silicon oxide film or silicon nitride film) of identical material with the second insulating barrier 85, and can form respectively individual layer.At this moment, peel off from insulating barrier 81 in order to prevent described the second insulating barrier 85, described the second insulating barrier 85 can be thinner with respect to insulating barrier 81.
Different therewith, described insulating barrier 81 and/or the second insulating barrier 85 can be formed by the distributed Bragg reflector of the different insulating barrier of alternately laminated refractive index with similar with reference to the separate layer 33 of Fig. 2 explanation.As in Fig. 2 explanation, this distributed Bragg reflector makes the light transmission that generates at active layer 27, and is reflected in the light of wavelength conversion layer 50 conversion.Preferably, described the second insulating barrier 85 is formed by distributed Bragg reflector, and described insulating barrier 81 can be formed by the stress relaxation layer of SOG or porous silicon oxide film etc.
Described wavelength conversion layer 50 is positioned at the second insulating barrier 85 tops, and described insulating barrier 81 and the second insulating barrier 85 have the effect of separate layer.On this basis, the separate layer 61 as reference Fig. 5 explanation can be got involved between a plurality of semiconductor stacked structure bodies 30 and wavelength conversion layer 50.And as reference Fig. 8 explanation, highly hard transparent resins 63 can cover wavelength conversion layer 50.
The cutaway view of the light-emitting diode chip for backlight unit 118 that is used for explanation further embodiment of this invention and provides is provided Figure 18.
With reference to Figure 18, described light-emitting diode chip for backlight unit 118 is with roughly the same with reference to the light-emitting diode chip for backlight unit 118 of Figure 17 explanation, and difference is further to comprise stress relaxation layer 87 and top distributed Bragg reflector 89.
That is, top distributed Bragg reflector 89 can between a plurality of semiconductor stacked structure bodies 30 and wavelength conversion layer 50, on this basis, can arrange stress relaxation layer 87 between top distributed Bragg reflector 89 and a plurality of semiconductor stacked structure body 30.Described top distributed Bragg reflector 89 is with similar with reference to the top distributed Bragg reflector 37 of Fig. 3 explanation, can the different insulating barrier of alternately laminated refractive index and form.And described stress relaxation layer 87 is identical with the stress relaxation layer 35 of Fig. 3, can be formed by SOG or porous silicon oxide film.Described top distributed Bragg reflector 89 and stress relaxation layer 87 also have the effect that makes the separate layer that described wavelength conversion layer 50 separates from semiconductor stacked structure body 30.
In the present embodiment, described insulating barrier 81 and the second insulating barrier 85 can form individual layer, and the second insulating barrier 85 can be omitted.
In front among the embodiment of explanation, fluorophor can be the fluorophor of fluorophor, nitride or nitrous oxides series of fluorophor, the silicate series of YAG or TAG series.And then wavelength conversion layer 50,60 or 70 can comprise the fluorophor of identical type, but is not limited to this, can also comprise two or more fluorophor.And, although illustrate and illustrate with the wavelength conversion layer 50,60 or 70 of individual layer, can use a plurality of wavelength conversion layers, can comprise mutually different fluorophor in a plurality of wavelength conversion layers.
Figure 19 is the cutaway view for the Light-Emitting Diode packaging part that the lift-launch light-emitting diode chip for backlight unit 101 that one embodiment of the invention provides is described.
With reference to Figure 19, light emission diode package member comprises for lift-launch light-emitting diode die 101 with for the base 91 that carries light-emitting diode die 101.And described light emission diode package member can also comprise bonding wire 95 and lens 97.
Described base 91 can be tellite, lead frame, ceramic substrate for example, comprises a plurality of lead terminal 93a, 93b.The first supplemantary electrode of light-emitting diode die 101 (Fig. 1 43) and the second supplemantary electrode (Fig. 1 44) are electrically connected on a plurality of lead terminal 93a, 93b by bonding wire 95 respectively.
In addition, lens 97 covering luminousing diode chips 101.The sensing angle of the light that lens 97 adjustment light-emitting diode chip for backlight unit 101 discharge makes light discharge along desired direction.Owing to be formed with wavelength conversion layer 50 on the light-emitting diode die 101, therefore described lens 97 need not to comprise fluorophor.
In the present embodiment, be illustrated for the light emission diode package member that has carried light-emitting diode chip for backlight unit 101, but can also carry the front on the described light emission diode package member with reference to the light-emitting diode chip for backlight unit 101 to 117 of Fig. 2 to Figure 17 explanation.
Below, the manufacture method of the light-emitting diode chip for backlight unit that provides for the embodiment of the invention is described in detail.
Figure 20 is the cutaway view for the manufacture method that the light-emitting diode chip for backlight unit 101 that one embodiment of the invention provides is described.
With reference to (a) of Figure 20, arrange bare chip 150 at supporting substrate 121.A plurality of bare chips 150 can be with identical arranged with interval on supporting substrate 121.As shown in Figure 1, a plurality of bare chips 150 comprise: substrate 21; The gallium nitride based semiconductor stacked structure body 30 that possesses the first conductive-type semiconductor layer 25, active layer 27 and the second conductive-type semiconductor layer 29; The first electrode 41; The second electrode 42.And, can get involved resilient coating 23 between the first conductive-type semiconductor layer 25 and the substrate 21.Namely, described bare chip 150 is equivalent to remove the part of the first supplemantary electrode 43 and the second supplemantary electrode 44 and wavelength conversion layer 50 in the light-emitting diode chip for backlight unit 101 of Fig. 1, for fear of repetition, omit the detailed explanation for each inscape of bare chip 150.
Supporting substrate 121 supports a plurality of bare chips 150, and is supported for and makes a plurality of bare chips keep identical spacing.Supporting substrate 121 is such as being the substrates such as glass, pottery, sapphire, GaN, Si.
With reference to (b) of Figure 20, on described a plurality of bare chips 150, form respectively the first supplemantary electrode 43 and the second supplemantary electrode 44.Each first supplemantary electrode 43 and the second supplemantary electrode 44 are such as utilizing the formation such as chemical vapor-phase growing method, sputter, plating or soldered ball.Described each first supplemantary electrode 43 and the second supplemantary electrode 44 can be formed by the material that Au, Ag, Cu, W, Ni, Al etc. have conductivity.Accordingly, as shown in Figure 1 a plurality of the first supplemantary electrodes 43 and the second electrode 44 can be formed on a plurality of bare chips 150.
With reference to (c) of Figure 20, form the wavelength conversion layer 50 that covers described a plurality of bare chips 150, a plurality of the first supplemantary electrode 43 and the second supplemantary electrode 44 at described supporting substrate 121.Wavelength conversion layer 50 can comprise fluorophor, and in order to control refractive index, can comprise TiO 2, SiO 2, Y 2O 3In powder.Described wavelength conversion layer 50 forms enough thick, to cover a plurality of the first supplemantary electrodes 43 and the second supplemantary electrode 44.Wavelength conversion layer 50 can form by the multiple coating process such as injection moulding, Transfer molding, compression forming, printing.
With reference to (d) of Figure 20, form after the wavelength conversion layer 50, remove supporting substrate 121.In order easily to remove supporting substrate 121, can stripping film (not shown) be set at supporting substrate 121.This stripping film is such as being the film of being stripped from according to heat or the light such as ultraviolet.Accordingly, by applying the light of heat or irradiation ultraviolet radiation etc. to this stripping film, thereby can easily remove supporting substrate 121.
Remove after the supporting substrate 121, described a plurality of bare chips 150 are fixed mutually according to wavelength conversion layer 50, and described a plurality of bare chip 150 can be pasted on the special supporter.
With reference to (e) of Figure 20, the top of described wavelength conversion layer 50 is removed and exposes a plurality of the first supplemantary electrodes 43 and the second supplemantary electrode 44.The top of described wavelength conversion layer 50 can be removed by the physical method that grinds, cuts or utilize laser, perhaps can use the chemical method removals such as etching.And then the top of wavelength conversion layer 50 can be removed into and make described the first supplemantary electrode 43 form identical face with the upper surface of the second supplemantary electrode 44 and wavelength conversion layer 50.
With reference to (f) of Figure 20, fill the wavelength conversion layer 50 in the space between a plurality of bare chips 150 by separating (sawing), thereby finish independent light-emitting diode chip for backlight unit 101 as shown in Figure 1.Described wavelength conversion layer 50 can utilize blade or laser and be separated.Described a plurality of independent light-emitting diode chip for backlight unit 101 has exposes the first supplemantary electrode 43 and the second supplemantary electrode 44, and the wavelength conversion layer 50 of the upper surface of the side of covered substrate 21 and semiconductor stacked structure body.
In the present embodiment, be formed on the supporting substrate 121 as example take the first supplemantary electrode 43 and the second supplemantary electrode 44 and be illustrated, but be not limited to this, the first supplemantary electrode 43 and the second supplemantary electrode 44 can be formed on the bare chip before supporting substrate 121 is arranged bare chip.
And, can be before forming the first supplemantary electrode 43 and the second supplemantary electrode 44, on the bare chip 150 that is arranged on the supporting substrate 121, form first separate layer (Fig. 5 61), and also can before forming separate layer, form stress relaxation layer (Fig. 6 62).Then, described separate layer patterning can be exposed the first electrode 41 and the second electrode 42, and on the first electrode 41 and the second electrode 42, form respectively the first supplemantary electrode 43 and the second supplemantary electrode 44.
And, in the present embodiment, be illustrated as an example of removal supporting substrate 121 before the top of removing wavelength conversion layer 50 example, but supporting substrate can after the top of removing wavelength conversion layer 50, perhaps utilize blade or separation by laser wavelength conversion layer 50 to remove afterwards.
In addition, described bare chip 150 can comprise such separate layer 33, bottom distributed Bragg reflector 45 and the metal level 47 with reference to Fig. 2 explanation, and can comprise such top distributed Bragg reflector 37 and stress relaxation layer 35 with reference to Fig. 3 explanation.And, described bare chip 150 can comprise the single semiconductor stacked structure body 30 such as Fig. 1, but be not limited to this, as reference Figure 16 to Figure 18 explanation, bare chip 150 can comprise a plurality of semiconductor stacked structure bodies 30, and can comprise insulating barrier 81, the second insulating barrier 85, stress relaxation layer 87 and distributed Bragg reflector 89.Accordingly, can produce the light-emitting diode chip for backlight unit 116 to 118 of Figure 16 to Figure 18.
In the present embodiment, the method of making light-emitting diode chip for backlight unit for forming wavelength conversion layer 50 at bare chip 150 is illustrated, but the similar method of method that the present invention also comprises forming wavelength conversion layer 50 is formed for changing the multiple clear coat of optical characteristics at bare chip 150, is not limited at bare chip 150 and forms wavelength conversion layers 50.This clear coat can comprise be used to the multiple material that improves optical characteristics, for example can comprise diffusion material.
Below, with reference to Figure 21 to Figure 22 the Light-Emitting Diode that further embodiment of this invention provides is described.
The upper plane figure of the Light-Emitting Diode that is used for explanation further embodiment of this invention and provides is provided Figure 21, and Figure 22 illustrates the figure of section that C-C ' along the line watches the Light-Emitting Diode of Figure 21.
With reference to Figure 21 and Figure 22, the Light-Emitting Diode that present embodiment provides can comprise sub-base substrate 1000, bare chip 200, adhering part 300, be formed at the first electrode 210 and the second electrode 220, the first supplemantary electrode 410 and the second supplemantary electrode 420 and the wavelength conversion layer 500 on described bare chip 200 tops.
At this, described sub-base substrate 1000 is used for mounting and mobile bare chip 200, be different from the growth substrate of semiconductor stacked structure body for growth bare chip 200 described later, and can form electrode or not form electrode, although unqualified, but can be tellite, lead frame or ceramic substrate, and be formed with being connected and connecting above and below side by top.And, around the zone of placing bare chip 200, can form the first slit 1110 and the second slit 1120 on the sub-base substrate 100.
Considering that described bare chip 200 will be mounted in the situation of size of position on the sub-base substrate 1000 and bare chip 200, the first slit 1110 and the second slit 1120 were pre-formed before mounting bare chip 200 on sub-base substrate 1000, and it is certain that the interval between the first slit 1110 and the second slit 1120 and the bare chip 200 keeps, by forming described slit 1110,1120, when for example such mode with metal bonding mounts as described later with bare chip 200, according to described slit 1110,1120, the movement of the metal of melting is limited, its result, bare chip 200 can not form the arrangement of larger mistake, can be arranged in correct position.
And the first slit 1110 and the second slit 1120 are not limited to this, for example can form the opening shape that connects sub-base substrate 1000, or according to embodiment, for example can adopt the shape of the recess patterns that forms with etching mode.
When the first slit 1110 and the second slit 1120 are fabricated to opening shape, as shown in the regional A of Figure 22, wavelength conversion layer 500 connects the peristome of the first slit 1110 and not only is formed at the upper surface of sub-base substrate 1000, also be formed at inner side, thus can be according to described wavelength conversion layer 500 stator base substrates 1000 and bare chip 200.
And, the opening shape of described the first slit 1110 and the second slit 1120 can be identical or different, can adopt corner as shown in the figure is the form that is similar to rectangle of circular arc, but is not limited to this, can adopt the shape of extending along the side of bare chip 200.But, Figure 21 is formed on situation with the overlapping position of line of cut 1140 (with reference to Figure 24) with the second slit 1120, show the sub-base substrate 1000 under the state that cuts off take independent chip as unit, therefore the second slit 1120 is different from the first slit 1110, only shows the structure of half.Accordingly, when the position of line of cut 1140 was adjusted, the second slit 1120 can form with the first slit 1110 similar.Described attachment 300 play the effect of stickup bare chip 200 on described sub-base substrate 1000, although do not limit, but for example when described bare chip 200 has the horizontal type structure, the semiconductor layer of bare chip 200 can pass through described attachment 300, makes the upper surface of the lower surface of the growth substrate (not shown) that is formed at semiconductor layer top and sub-base substrate 1000 bonding.Described attachment 300 are such as utilizing the making such as silica gel, metal paste, epoxy resin slurry.But the present invention is not limited to the kind of specific attachment, and bare chip 200 can also be mounted on the sub-base substrate 1000 by the metal bonding of utilization such as the metal of AuSn.
In order to simplify, described bare chip 200 is omitted in diagram, but can be the led chip that possesses the gallium nitride based semiconductor stacked structure body of the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer.Specifically, described semiconductor stacked structure style as can comprise by the film formed N-shaped layer of GaN and p-type layer and get involved between N-shaped layer and p-type layer, by the film formed active layer of InGaN.Usually in growth substrate (not shown) growth, described growth substrate can use sapphire (Al to this semiconductor stacked structure body 2O 3) formation such as substrate, carborundum (SiC) substrate, silicon (Si) substrate, lead oxide (ZnO) substrate, GaAs (GaAs) substrate or gallium phosphide (GaP) substrate.But when described bare chip 200 was the vertical-type structure, described growth substrate for example can separate with described semiconductor stacked structure body by laser lift-off technique (LLO).
The present invention is not limited to the specific bare chip structures such as horizontal type structure or vertical-type structure, but the following description is take the horizontal type bare chip as main, and the structure of bare chip 200 is identical with the structure of common gallium nitride luminous diode, therefore omits detailed explanation.
Described the first electrode 210 and the second electrode 220 are electrically connected with first and second conductive-type semiconductor layers (not shown) of described bare chip 200 respectively, and for example can comprise Ti, Cu, Ni, Al, Au or Cr also can be formed by plural material wherein.And described the first electrode 210 and the second electrode 220 can form the thickness of about 10～200 μ m.But, in Figure 22, the first electrode 210 is shown and the second electrode 220 forms respectively two, but the quantity of formation of the first electrode 210 and the second electrode 220 or form the situation that the position is not limited to illustrated specific embodiment.Namely, kind according to bare chip 200, adopt in the situation of horizontal type structure at bare chip 200, the first electrode 210 and the second electrode 220 all be formed at bare chip 200 above, adopt in the situation of vertical-type structure at bare chip 200, the some electrodes in the first electrode 210 and the second electrode 220 can be omitted.And, when the first electrode 210 and the second electrode 220 all form, can be different from diagram, the first electrode 210 and the second electrode can mutually be faced on bare chip 200 and only form respectively one.Namely, along with bare chip 200 itself is tending towards large tracts of land, as shown in the figure, the first electrode 210 and the second electrode 220 can form respectively two, but in normal circumstances, the first electrode 210 and the second electrode 220 only form one, and the position of these first electrodes 210 and the second electrode 220 can dissimilate according to horizontal type structure or vertical-type structure.But the following description is take the structure of Figure 22 as main.
Described the first supplemantary electrode 410 and the second supplemantary electrode 420 form thickness more than about 100 μ m at the first electrode 210 and the second electrode 220 respectively, and such as utilizing the conductive metal materials such as Au, Cu, Ag, Al to form.And, can also form by the manufacture method of utilizing chemical vapor-phase growing method, electron beam (e-beam), sputter, plating or soldered ball etc., according to embodiment, can also be after the coating photosensitive material, expose and develop and make, so the present invention is not subjected to the restriction of specific electrode forming method.
And described the first supplemantary electrode 410 and the second supplemantary electrode 420 can have respectively compares the first electrode 210 and the narrower width of the second electrode 220.That is, the first supplemantary electrode 410 and the second supplemantary electrode 420 are defined to respectively the top of the first electrode 210 and the second electrode 220.And, the first supplemantary electrode 410 and the second supplemantary electrode 420 can have more away from the contact-making surface of the first electrode 210 and the second electrode 220, the shape that width just more narrows down.According to this shape, the first supplemantary electrode 410 and the second supplemantary electrode 420 can stably stick on respectively on the first electrode 210 and the second electrode 220 and keep, and are conducive to the subsequent techniques such as Bonding.And, can with the first supplemantary electrode 410 and the second supplemantary electrode 420 with respect to the rate control of the height of bottom surface within preset range, so that the first supplemantary electrode 410 and the second supplemantary electrode 420 can stably remain on the first electrode 210 and the second electrode 220.
Described wavelength conversion layer 500 is to comprise fluorophor and form in epoxy resin or silica gel, is perhaps only formed by fluorophor, plays light that the active layer (not shown) at bare chip 200 is generated as excitaton source and the effect of the ejaculation conversion wavelength after.
At this, have no particular limits for the kind of described fluorophor, known wavelength conversion can use with material, although do not limit, for example can be by (Ba, Sr, Ca) 2SiO 4: Eu 2+, YAG ((Y, Gd) 3(Al, Ga) 5O 12: Ce 3+) serial fluorophor, TAG ((Tb, Gd) 3(Al, Ga) 5O 12: Ce 3+) serial fluorophor, (Ba, Sr, Ca) 3SiO 5: Eu 2+, (Ba, Sr, Ca) MgSi 2O 6: Eu 2+, Mn 2+, (Ba, Sr, Ca) 3MgSi 2O 8: Eu 2+, Mn 2+And (Ba, Sr, Ca) MgSiO 4: Eu 2+, Mn 2+The fluorophor of more than one that select among the group who consists of.
And with reference to one embodiment of the invention, wavelength conversion layer 500 not only can on the top (zone that represents with chain-dotted line among Figure 21) of bare chip 200, can also form with uniform thickness in the side.At this moment, as described later, can utilize mould to form the smooth wavelength conversion layer 500 of upper surface in the zone in (whole or local) zone except the first supplemantary electrode 410 with above the second supplemantary electrode 420, and by being run through wavelength conversion layer 500, the first supplemantary electrode 410 and the second supplemantary electrode 420 be exposed to the outside, thereby when packaging operation, can easily carry out Bonding, even if form wavelength conversion layer 500 on the chip-scale, also need not to expose for carrying out Bonding the technique of appending of electrode.
And then wavelength conversion layer 500 for example can have the refractive index within 1.4～2.0 scopes, in order to adjust refractive index, TiO 2, SiO 2, Y 2O 3Can be blended within the wavelength conversion layer 500 in powder.
In addition, as shown in the figure, the upper surface of the first supplemantary electrode 410 can be positioned at the height identical with the upper surface of the second supplemantary electrode 420.Accordingly, be in the situation of horizontal type Light-Emitting Diode at bare chip 200, remove the part of the second conductive-type semiconductor layer and active layer and when exposing the first conductive-type semiconductor layer, the second supplemantary electrode 420 that the first supplemantary electrode 410 comparabilities that are electrically connected with the first conductive-type semiconductor are electrically connected with the second conductive-type semiconductor layer is longer.
According to present embodiment, since wavelength conversion layer 500 not only cover bare chip 200 above, also cover the side of bare chip 200, therefore provide not only for the light that discharges above by the semiconductor stacked structure body, can also carry out for the light of the side release by the semiconductor stacked structure body Light-Emitting Diode of wavelength conversion.
Figure 23 illustrates the figure that is formed with the sub-base substrate of a plurality of Light-Emitting Diodes according to one embodiment of the invention, and Figure 24 is for amplifying the figure in the zone that represents with circle among Figure 23.
According to one embodiment of the invention, after can be on a sub-base substrate 1000 mounting a plurality of bare chips 200 with matrix structure, utilize mould to form simultaneously wavelength conversion layer 500 at these above a plurality of bare chips 200, and these are cut take independent chip as unit.And, at this moment, when the second slit 1120 is formed on the overlapping position of line of cut 1140, can carry out more easily this cutting technique.
In addition, on the sub-according to an embodiment of the invention base substrate 1000, except aforesaid the first slit 1110 and the second slit 1120, can also be formed with chip and separate with slit 1130.Namely, when line of cut 1140 cuts off sub-base substrate 1000 along horizontal (directions X), by separating with slit 1130 along the chip that vertical (Y-direction) forms with certain interval on sub-base substrate 1000, Light-Emitting Diode can be separated take independent chip as unit.
Accordingly, according to the present invention, after being mounted on a plurality of bare chips on the substrate, form wavelength conversion layer by same technique on the top of all bare chips, and cut off take independent chip as unit, thereby can make simultaneously a plurality of light-emitting components, therefore can shorten manufacturing time, can realize the saving of manufacturing cost by a large amount of productions.
Below, specify the Light-Emitting Diode that one embodiment of the invention provides and the manufacture method that comprises this packaging part with reference to Figure 25 and Figure 26.
Figure 25 be to be used for the flow chart of the manufacture method of the Light-Emitting Diode that explanation one embodiment of the invention provides, and the figure of the manufacturing process of the Light-Emitting Diode that one embodiment of the invention is shown respectively according to step provides is provided Figure 26.But each step of Figure 25 can be carried out simultaneously or not simultaneously, can also be according to different situation order changes, and specific step can also be omitted.Accordingly, the present invention is not limited to illustrated order.
At first, such as (a) of Figure 26, prepare sub-base substrate 1000 (step S1).As previously mentioned, upward around the zone that will put bare chip 200, can be formed with a plurality of the first slits 1110 and the second slit 1120 at sub-base substrate 1000 (with reference to Figure 24), and be pre-formed chip and separated with slit 1130, thus after cutting technique in only cut off sub-base substrate 1000 along directions X also can be take independent chip as the units separate Light-Emitting Diode.
Afterwards, such as (b) of Figure 26, can on the sub-base substrate 1000 of preparing, mount a plurality of bare chips 200 (step S2) with the matrix form.At this, bare chip 200 can utilize attachment 300 be glued to sub-base substrate 1000 above, can also be by being stuck such as the metal bonding method of utilizing AuSn etc.And when mounting bare chip 200, because the first slit 1110 and the second slit 1120, bare chip 200 can not arranged mistakenly and can be arranged in desired position.At this moment, top the first electrode 210 and second electrode 220 that is electrically connected on respectively the first conductive-type semiconductor layer (not shown) and the second conductive-type semiconductor layer (not shown) that be formed with of bare chip 200.
Afterwards, shown in Figure 26 (c), form respectively the first supplemantary electrode 410 and the second supplemantary electrode 420 (step S3) on the top of described the first electrode 210 and the second electrode 220.The first supplemantary electrode 410 and the second supplemantary electrode 420 are such as utilizing the conductive metal materials such as Au, Cu, Ag, Al to form, and can form by the manufacture method of utilizing chemical vapor-phase growing method, electron beam (e-beam), sputter, plating or soldered ball etc., according to embodiment, can also be after the coating photosensitive material, expose and develop and make.
Afterwards, on bare chip 200, form wavelength conversion layer 500 (step S4) with the side.According to one embodiment of the invention, (d) such as Figure 26, utilize mould 650 to clamp to be pasted with the sub-base substrate 1000 of bare chip 200, when on for described the first supplemantary electrode 410 and the second supplemantary electrode 420, exerting pressure, make the one side of mould 650 and supplemantary electrode 410,420 top mutually being adjacent to and avoid producing under the state in space, after fluorophor and resin compound are injected in mould inside space 600, can form wavelength conversion layer 500 (Figure 26 (e)) by making described hardening of resin.At this moment, because the power that mould 650 applies to supplemantary electrode 410,420, supplemantary electrode 410, the distortion of 420 shape, even if supplemantary electrode 410,420 height form slightly different situation accordingly, also can make by mould and highly become identical, and also can not produce the slit between mould and the supplemantary electrode 410,420.
And, for mould 650 is pressurizeed to supplemantary electrode more effectively, according to embodiment, it is identical with the whole height that possesses supplemantary electrode 410,420 bare chip 200 that the height of mould frame not only can be adjusted into, can also be adjusted into be lower than possess supplemantary electrode 410, the whole height of 420 bare chip 200.And, in (e) of Figure 26, only illustrate as benchmark with single bare chip 200, but when forming wavelength conversion layer 500 in the reality, for a plurality of bare chips 200 integral body of arranging with matrix among Figure 23 and Figure 24, can use single mould to form simultaneously wavelength conversion layer 500 at these above a plurality of bare chips 200.
Afterwards, the sub-base substrate 1000 that forms wavelength conversion layer 500 is cut off a plurality of Light-Emitting Diodes (step S5) take independent chip as units separate along line of cut 1140.At this moment, as previously mentioned, the zone between chip and chip is extended with more longways chip along Y direction and separates the opening of using slit 1130, therefore cuts off operation and can only implement along direction of X-axis, thereby can simplify cutting technique, shortens the process time.
Afterwards; as shown in figure 27; independent light-emitting diode is mounted on base plate for packaging 1500; then on the first supplemantary electrode 410 and the second supplemantary electrode 420, be electrically connected respectively bonding wire 800; applying power supply to Light-Emitting Diode; and form the lens 700 seal described Light-Emitting Diode, with can be from the described Light-Emitting Diode of outer protection (step S6).
That is, Figure 27 is the cutaway view for the Light-Emitting Diode packaging part that the lift-launch Light-Emitting Diode that one embodiment of the invention provides is described.With reference to Figure 27, the Light-Emitting Diode packaging part can comprise the base plate for packaging 1500 of pasting the sub-base substrate 1000 carried bare chip 200, be formed at described bare chip 200 on the first supplemantary electrode 410 and the bonding wire 800 that is electrically connected of the second supplemantary electrode 420, the lens 700 of sealing described bare chip 200.
Described base plate for packaging 1500 is different with substrate 1000 from sub-base, it is the substrate that is equipped with for to bare chip 200 supply power supplys, although without limits, but such as being tellite, lead frame, ceramic substrate etc., can comprise that a plurality of power supplys are for using lead terminal (not shown).Accordingly, the first supplemantary electrode 410 of bare chip 200 and the second supplemantary electrode 420 can be electrically connected on described lead terminal by bonding wire 800 respectively.
In addition, lens 700 form the described sub-base substrate 1000 that is formed with described wavelength conversion layer 500 sealed and are integrated, that is, form and cover whole bare chip 200, thereby the sensing angle that can adjust the light that discharges from bare chip 200 makes light discharge towards desired direction.According to present embodiment, owing to be formed with wavelength conversion layer 500 on the bare chip 200, therefore described lens 700 need not to comprise fluorophor, but according to circumstances, can also comprise the different fluorophor of fluorophor that comprises from wavelength conversion layer 500.
Accordingly, according to one embodiment of the invention, along with utilization is mounted on the bare chip 200 encapsulating light emitting diodes of sub-base substrate 1000, can more freely carry out the packaging part appearance design, packaging operation becomes simply, can improve operating efficiency.
Below, with reference to Figure 28, the Light-Emitting Diode that provides for another embodiment of the present invention describes.
Different from previous embodiment, for example, the Light-Emitting Diode of Figure 22 is the structure that the semiconductor stacked structure body of wavelength conversion layer 500 and bare chip 200 joins, but in the Light-Emitting Diode shown in Figure 28, can form and between wavelength conversion layer 500 and semiconductor stacked structure body, get involved transparent resin 550, so that wavelength conversion layer 500 separates from the semiconductor stacked structure body.
So, along with wavelength conversion layer 500 separates from the semiconductor stacked structure body, can prevent that the resin of wavelength conversion layer 500 or fluorophor from occuring deteriorated because of the light that generates in the active layer (not shown).And at this moment, described transparent resin 550 can also be got involved between the medial surface and wavelength conversion layer 500 of the first slit 1110 that forms on the sub-base substrate 1000 (the regional B of Figure 28).
At this, in order to reduce the heat that is passed to fluorophor, the thermal conductivity of described transparent resin 550 is more low more favourable, for example can be less than 3W/mK.And, in order to adjust the refractive index of transparent resin 550, TiO 2, SiO 2, Y 2O 3Can be blended in the transparent resin in powder.
Perhaps, although do not illustrate, for the highly hard transparent resins (not shown) that makes hardness be higher than described transparent resin 550 covers wavelength conversion layer 500, can also further form highly hard transparent resins on the top of described wavelength conversion layer 500.At this moment, described highly hard transparent resins can protect fluorophor to avoid the impact of outside moisture, and in order to prevent absorbing moisture, described highly hard transparent resins for example is preferably that Shore durometer number reaches more than the 60A.And then, in order to adjust the refractive index of described highly hard transparent resins, TiO 2, SiO 2, Y 2O 3Can be blended within the resin in powder.
Light-emitting diode chip for backlight unit provided by the invention described above and manufacture method thereof and comprise that its packaging part and manufacture method thereof are not limited to embodiment recited above, are applicable as the light-emitting component with various structures that comprises the wavelength conversion material.
The present invention implements after can making amendment within the scope that does not break away from purport of the present invention and be out of shape, scope of the present invention defines according to claims, rather than define according to above-mentioned detailed explanation, the meaning of accessory rights claim and scope with and equivalents all changes of deriving or all should be interpreted as being contained in scope of the present invention through the form of distortion.

Claims (54)

1. light-emitting diode chip for backlight unit comprises:
Substrate;
The semiconductor stacked structure body, this semiconductor stacked structure body is the gallium nitride system compound semiconductor layer stack structure that is positioned on the described substrate, comprises the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer;
Electrode is electrically connected on described semiconductor stacked structure body;
Supplemantary electrode is formed on the described electrode;
Wavelength conversion layer covers the top of described semiconductor stacked structure body,
Described supplemantary electrode runs through described wavelength conversion layer.
2. light-emitting diode chip for backlight unit according to claim 1 wherein, also comprises the separate layer of getting involved between described wavelength conversion layer and described semiconductor stacked structure body.
3. light-emitting diode chip for backlight unit according to claim 2, wherein, described separate layer is formed by insulating barrier.
4. light-emitting diode chip for backlight unit according to claim 2, wherein, described separate layer comprises distributed Bragg reflector.
5. light-emitting diode chip for backlight unit according to claim 4, wherein, described separate layer also comprises the stress relaxation layer of getting involved between described distributed Bragg reflector and described semiconductor stacked structure body.
6. light-emitting diode chip for backlight unit according to claim 5, wherein, described stress relaxation layer is formed by spin-on glasses layer or porous silicon oxide film.
7. light-emitting diode chip for backlight unit according to claim 1, wherein, described supplemantary electrode has compares the narrower width of described electrode.
8. light-emitting diode chip for backlight unit according to claim 7, wherein, described supplemantary electrode from described electrode more away from, it is narrower that width becomes.
9. light-emitting diode chip for backlight unit according to claim 1, wherein, the electrode that is electrically connected on described semiconductor stacked structure body comprises:
The first electrode is electrically connected on described the first conductive-type semiconductor layer;
The second electrode is electrically connected on described the second conductive-type semiconductor layer,
Described supplemantary electrode comprises:
The first supplemantary electrode is formed on described the first electrode;
The second supplemantary electrode is formed on described the second electrode.
10. light-emitting diode chip for backlight unit according to claim 1, wherein, the upper side of described supplemantary electrode is consistent with the upper side of described wavelength conversion layer.
11. light-emitting diode chip for backlight unit according to claim 1, wherein, the electrode that is electrically connected on described semiconductor stacked structure body is electrically connected on described the first conductive-type semiconductor layer.
12. a light-emitting diode chip for backlight unit comprises:
Substrate;
A plurality of semiconductor stacked structure bodies are positioned on the described substrate, comprise respectively the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer;
The first electrode is electrically connected on a semiconductor stacked structure body;
The second electrode is electrically connected on second half conductor layer lamination structural body;
The first supplemantary electrode is formed on described the first electrode;
The second supplemantary electrode is formed on described the second electrode;
Wavelength conversion layer covers the top of described a plurality of semiconductor stacked structure bodies,
Described the first supplemantary electrode and described the second supplemantary electrode run through described wavelength conversion layer.
13. light-emitting diode chip for backlight unit according to claim 12 wherein, also comprises the distribution of the described a plurality of semiconductor stacked structure bodies of mutual electrical connection.
14. light-emitting diode chip for backlight unit according to claim 12 wherein, also comprises the separate layer of getting involved between described wavelength conversion layer and described a plurality of semiconductor stacked structure body.
15. light-emitting diode chip for backlight unit according to claim 14, wherein, described separate layer is formed by insulating barrier.
16. light-emitting diode chip for backlight unit according to claim 14, wherein, described separate layer further comprises the distributed Bragg reflector of getting involved between described wavelength conversion layer and described a plurality of semiconductor stacked structure body.
17. light-emitting diode chip for backlight unit according to claim 16 wherein, also comprises the stress relaxation layer of getting involved between described distributed Bragg reflector and described a plurality of semiconductor stacked structure body.
18. light-emitting diode chip for backlight unit according to claim 12, wherein, described the first supplemantary electrode and the second supplemantary electrode have respectively than described the first electrode and the narrower width of the second electrode.
19. light-emitting diode chip for backlight unit according to claim 18, wherein, described the first supplemantary electrode and the second supplemantary electrode divide take leave of described the first electrode and the second electrode far away, it is narrower that width becomes.
20. light-emitting diode chip for backlight unit according to claim 12, wherein, described the first electrode is electrically connected on the first conductive-type semiconductor layer of a described semiconductor stacked structure body, and described the second electrode is electrically connected on the second conductive-type semiconductor layer of described another semiconductor stacked structure body.
21. a Light-Emitting Diode packaging part comprises lead terminal, light-emitting diode chip for backlight unit and the bonding wire that connects described lead terminal and described light-emitting diode chip for backlight unit, wherein, described light-emitting diode chip for backlight unit comprises:
Substrate;
Semiconductor stacked structure body, this semiconductor stacked structure body are the top gallium nitride system compound semiconductor layer stack structure that is positioned at described substrate, comprise the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer;
Electrode is electrically connected on described semiconductor stacked structure body;
Supplemantary electrode is formed on the described electrode;
Wavelength conversion layer covers the top of described semiconductor stacked structure body,
Described supplemantary electrode runs through described wavelength conversion layer,
Described bonding wire connects described supplemantary electrode and described lead terminal.
22. a method for manufacturing LED chip comprises:
Arrange a plurality of bare chips at supporting substrate, each described bare chip comprises: substrate; The semiconductor stacked structure body, this semiconductor stacked structure body is the gallium nitride system compound semiconductor layer stack structure that is positioned on the described substrate, comprises the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer; Electrode is electrically connected on described semiconductor stacked structure body; :
Electrode at each described bare chip forms supplemantary electrode;
Form the clear coat that covers described a plurality of bare chips and described supplemantary electrode at described supporting substrate;
Remove the top of described clear coat, expose described supplemantary electrode;
Remove described supporting substrate;
Separate described clear coat, to be separated into independent light-emitting diode chip for backlight unit.
23. method for manufacturing LED chip according to claim 22, wherein, described clear coat comprises fluorophor or diffusion material.
24. method for manufacturing LED chip according to claim 22, wherein, the electrode that is electrically connected on described semiconductor stacked structure body comprises the first electrode that is electrically connected on described the first conductive-type semiconductor layer and the second electrode that is electrically connected on described the second conductive-type semiconductor layer
The step that forms described supplemantary electrode is included in and forms the first supplemantary electrode on described the first electrode, forms the second supplemantary electrode at the second electrode,
The upper side of described the first supplemantary electrode and the second supplemantary electrode is positioned at equal height.
25. method for manufacturing LED chip according to claim 22, wherein, the step that forms described supplemantary electrode was carried out before being arranged in described bare chip on the supporting substrate in advance.
26. method for manufacturing LED chip according to claim 22, wherein, the step that forms described supplemantary electrode is carried out after described bare chip is arranged in supporting substrate.
27. method for manufacturing LED chip according to claim 22 wherein, also comprises: before forming described clear coat, form the separate layer that covers described semiconductor stacked structure body.
28. method for manufacturing LED chip according to claim 27, wherein, described separate layer is formed by single insulating barrier or a plurality of insulating barrier.
29. method for manufacturing LED chip according to claim 27, wherein, described separate layer comprises distributed Bragg reflector.
30. method for manufacturing LED chip according to claim 29, wherein, described separate layer further comprises stress relaxation layer, and described distributed Bragg reflector is formed on the described stress relaxation layer.
31. method for manufacturing LED chip according to claim 22, wherein, described supplemantary electrode has compares the narrower width of described electrode.
32. method for manufacturing LED chip according to claim 31, wherein, described supplemantary electrode from described electrode more away from, it is narrower that width becomes.
33. method for manufacturing LED chip according to claim 22 wherein, is removed the step of described supporting substrate and was carried out before separating described clear coat.
34. method for manufacturing LED chip according to claim 22, wherein, described bare chip further comprises the separate layer that covers described semiconductor stacked structure body.
35. method for manufacturing LED chip according to claim 34, wherein, described separate layer further comprises distributed Bragg reflector.
36. method for manufacturing LED chip according to claim 35, wherein, described separate layer further comprises the stress relaxation layer of getting involved between described distributed Bragg reflector and described semiconductor stacked structure body.
37. method for manufacturing LED chip according to claim 22, wherein, described bare chip comprises a plurality of semiconductor stacked structure bodies that are positioned on the described substrate.
38. described method for manufacturing LED chip according to claim 37, wherein, described bare chip also comprises the separate layer that is positioned on described a plurality of semiconductor stacked structure body.
39. a Light-Emitting Diode packaging part comprises:
Sub-base substrate;
Possess the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer, and possess the first electrode that is electrically connected on described the first conductive-type semiconductor layer and the second electrode that is electrically connected on described the second conductive-type semiconductor layer, arrange in the above in described the first electrode and the second electrode at least one, be mounted on the bare chip on the described sub-base substrate;
Expose described the first electrode of being formed at above the described bare chip and at least one in the second electrode, and the top and side of described bare chip is covered as one, and cover at least the wavelength conversion layer of the top part of described sub-base substrate.
40. described Light-Emitting Diode packaging part according to claim 39, wherein, described sub-base substrate comprises a plurality of slits that form along the side of described bare chip.
41. described Light-Emitting Diode packaging part according to claim 40, wherein, each has opening shape described a plurality of slits.
42. described Light-Emitting Diode packaging part according to claim 41, wherein, described wavelength conversion layer covers the inner side of described sub-base substrate by at least a portion in described a plurality of slits.
43. described Light-Emitting Diode packaging part according to claim 39, wherein, described sub-base substrate and described bare chip carry out metal bonding.
44. described Light-Emitting Diode packaging part according to claim 39 wherein, also comprises:
Be formed with power supply for the substrate of using lead-in wire;
Be electrically connected described power supply for using the bonding wire of lead-in wire with described the first electrode and described the second electrode;
Seal the lens of described bare chip.
45. the manufacture method of a Light-Emitting Diode packaging part comprises the steps:
Prepare sub-base substrate;
The a plurality of bare chips that comprise respectively the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer are mounted on the described sub-base substrate;
Formation is electrically connected on the first electrode of described the first conductive-type semiconductor layer, and forms the second electrode that is electrically connected on described the second conductive-type semiconductor layer;
Top described the first electrode of being formed at described bare chip and at least one in the second electrode are exposed in formation, the top and side of described bare chip is covered as one, and covers at least the wavelength conversion layer of the top part of described sub-base substrate.
46. the manufacture method of described Light-Emitting Diode packaging part according to claim 45, wherein, the step that forms described the first electrode and the second electrode comprises step: with in described the first electrode and the second electrode at least one be formed at described bare chip above.
47. the manufacture method of described Light-Emitting Diode packaging part according to claim 45, wherein, the manufacture method of described Light-Emitting Diode packaging part further comprises step: utilize mould to described the first electrode and the pressurization of the second electrode, to avoid producing the slit between described mould and described the first electrode and the second electrode.
48. the manufacture method of described Light-Emitting Diode packaging part according to claim 47, wherein, the step that forms described wavelength conversion layer comprises step: inject in the inner space of described mould and contain the resin of fluorophor and be cured.
49. the manufacture method of described Light-Emitting Diode packaging part according to claim 45, wherein, the step of preparing described sub-base substrate comprises step: form a plurality of slits along the zone that mounts described bare chip.
50. the manufacture method of described Light-Emitting Diode packaging part according to claim 49, wherein, described a plurality of slits form respectively opening shape.
51. the manufacture method of described Light-Emitting Diode packaging part according to claim 50, wherein, the step that forms described wavelength conversion layer comprises step: described wavelength conversion layer is formed the inner side that covers described sub-base substrate by a part of slit in described a plurality of slits.
52. the manufacture method of described Light-Emitting Diode packaging part according to claim 45, wherein, the manufacture method of described light emission diode package member comprises and also comprises step: form transparent resin layer between described wavelength conversion layer and described bare chip.
53. the manufacture method of described Light-Emitting Diode packaging part according to claim 45, wherein, the manufacture method of described Light-Emitting Diode packaging part also comprises step: described sub-base substrate is cut take independent light-emitting diode die as unit.
54. the manufacture method of 3 described Light-Emitting Diode packaging parts according to claim 5, wherein, the manufacture method of described Light-Emitting Diode packaging part also comprises step:
Mount the described independent bare chip that is cut at the substrate with lead-in wire;
Described the first electrode and the second electrode are electrically connected with bonding wire respectively;
The lens of described independent light-emitting diode chip for backlight unit are sealed in formation.
CN201080068136.6A 2010-05-18 2010-12-03 There is light emitting diode chip and the manufacture method thereof of wavelength conversion layer, and include its packaging part and manufacture method thereof Active CN103003966B (en)

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