CN103003966B - There is light emitting diode chip and the manufacture method thereof of wavelength conversion layer, and include its packaging part and manufacture method thereof - Google Patents

There is light emitting diode chip and the manufacture method thereof of wavelength conversion layer, and include its packaging part and manufacture method thereof Download PDF

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Publication number
CN103003966B
CN103003966B CN201080068136.6A CN201080068136A CN103003966B CN 103003966 B CN103003966 B CN 103003966B CN 201080068136 A CN201080068136 A CN 201080068136A CN 103003966 B CN103003966 B CN 103003966B
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China
Prior art keywords
described
electrode
light
layer
emitting diode
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CN201080068136.6A
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Chinese (zh)
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CN103003966A (en
Inventor
郑井和
金枋显
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首尔半导体株式会社
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Priority to KR10-2010-0046423 priority Critical
Priority to KR20100046423 priority
Priority to KR1020100090352A priority patent/KR101719642B1/en
Priority to KR10-2010-0090352 priority
Priority to KR10-2010-0096682 priority
Priority to KR20100096682 priority
Priority to KR10-2010-0110149 priority
Priority to KR1020100110149A priority patent/KR101230619B1/en
Application filed by 首尔半导体株式会社 filed Critical 首尔半导体株式会社
Priority to PCT/KR2010/008647 priority patent/WO2011145794A1/en
Publication of CN103003966A publication Critical patent/CN103003966A/en
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Publication of CN103003966B publication Critical patent/CN103003966B/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/06102Disposition the bonding areas being at different heights
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401Structure
    • H01L2224/1403Bump connectors having different sizes, e.g. different diameters, heights or widths
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Abstract

Open light-emitting diode chip for backlight unit, the method manufacturing this with wavelength conversion layer and possess this packaging part.According to a form, described light-emitting diode chip for backlight unit, including: substrate;Semiconductor stacked structure body, this semiconductor stacked structure body is the gallium nitride system compound semiconductor layer stack structure being positioned at described thereon, including the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer;Electrode, is electrically connected to described semiconductor stacked structure body;Supplemantary electrode, is formed on described electrode;Wavelength conversion layer, covers the top of described semiconductor stacked structure body.And then, described supplemantary electrode runs through described wavelength conversion layer.Accordingly, it is possible to provide be able to carry out converting the wavelength of light, and can the light-emitting diode chip for backlight unit of easily bonding wire.

Description

There is light emitting diode chip and the manufacture method thereof of wavelength conversion layer, and include its packaging part and Manufacture method

Technical field

The present invention relates to light emitting diode chip and manufacture method thereof, and include its packaging part and system thereof Make method, particularly relate to light-emitting diode chip for backlight unit and the manufacture method thereof with wavelength conversion layer, and bag Include its packaging part and manufacture method thereof.

Background technology

It is capable of compactization owing to current Light-Emitting Diode has, saves the energy and tie up for a long time The advantage holding the life-span, the back side light source of the various display devices being just used as including mobile phone, And owing to the light-emitting component (that is, Light-Emitting Diode encapsulation) of attachment Light-Emitting Diode is capable of having height The white light of color rendering, thus wait in expectation and replace the white light source of such as fluorescent lamp and be applied to common photograph Among bright.

It addition, there is the various method utilizing Light-Emitting Diode to realize white light, but generally use by group Close the InGaN Light-Emitting Diode of the blue light of release 430nm~470nm and described blue light can be become The method being changed to the fluorophor of long wavelength and realize white light.Such as, white light can pass through blue-light-emitting two Pole is managed and is excited by described blue LED and discharge the combination of the yellow fluorophor of yellow and realize, Or can be realized by blue LED and green-emitting phosphor and the combination of red-emitting phosphors.

In the past, resin-coated in being pasted with Light-Emitting Diode by by containing fluorophor of white-light luminescent component Packaging part sunk area in and formed.But, along with coating resin in packaging part, there is fluorescence Body cannot be evenly distributed in resin, and the problem that cannot form resin with homogeneous thickness.

Accordingly, the mode pasting wavelength conversion sheet (sheet) on Light-Emitting Diode is being studied.Ripple Fluorophor such as can be mixed among glass etc. and be formed by long conversion sheet.By by this wavelength conversion Sheet is pasted onto the upper surface of light emitting diode such that it is able to realize white light in chip-scale (chip level).

But, owing to wavelength conversion sheet is pasted on the upper surface of Light-Emitting Diode, therefore it is confined to have The Light-Emitting Diode of the structure that light mainly discharges towards the upper surface of Light-Emitting Diode realizes the feelings of white light Shape.In the side of Light-Emitting Diode, such as, there is the considerable amount of light of side release towards growth substrate In the Light-Emitting Diode of structure, the improper wavelength conversion utilizing wavelength conversion sheet.

During it addition, coating is containing the resin of fluorophor in an enclosure, due to by wire bonding to luminescence Coating resin after diode, therefore the electrode of Light-Emitting Diode is covered the most not by the resin containing fluorophor Problem can be become.But, when forming wavelength conversion layer in chip-scale, it is desirable to forming wavelength conversion layer Afterwards by wire bonding to Light-Emitting Diode.Accordingly, in order to by wavelength conversion layer bonding wire, having must Electrode to be exposed, and require to be formed as wavelength conversion layer can the technology of easily bonding wire.

Summary of the invention

Technical problem

To be solved by this invention haveing a problem in that provides one can perform the light changes such as wavelength conversion in chip-scale The light-emitting diode chip for backlight unit changed and manufacture method thereof.

To be solved by this invention another problem is that provides a kind of for being gone out by the side release of substrate Light also is able to perform light-emitting diode chip for backlight unit and the manufacture method thereof of wavelength conversion.

To be solved by this invention another is problematic in that offer is a kind of and is being able to carry out the light changes such as wavelength conversion Easily light emitting diode chip and the manufacture method thereof being bonded can be carried out by para-linkage lead-in wire while changing.

To be solved by this invention another is problematic in that offer one to be prevented from wavelength conversion layer and converts Light be again incident on light-emitting diode chip for backlight unit internal time the light-emitting diode chip for backlight unit of loss that produces.

To be solved by this invention another is problematic in that offer one can relax wavelength conversion layer by light loss The light emitting diode chip of wound.

Technical scheme

Light-emitting diode chip for backlight unit according to the present invention one form includes: substrate;Semiconductor stacked structure body, This semiconductor stacked structure body is the gallium nitride system compound semiconductor layer stack structure being positioned on described substrate, Including the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer;Electrode, electrical connection In described semiconductor stacked structure body;Supplemantary electrode, is formed on described electrode;Wavelength conversion layer, covers Cover the top of described semiconductor stacked structure body.And then, described supplemantary electrode runs through described wavelength conversion layer. By using described supplemantary electrode, it is possible to provide performing while wavelength conversion can easily bonding wire Light-emitting diode chip for backlight unit.

And, described light-emitting diode chip for backlight unit can also include getting involved in described wavelength conversion layer and described half Separate layer between conductor laminate structure.Described separate layer is formed by insulating barrier.And then, described separation Layer can include distributed Bragg reflector, but also can include getting involved in described distributed Bragg reflector And the stress relaxation layer between described semiconductor stacked structure body.

Described separate layer is got involved between described wavelength conversion layer and described semiconductor stacked structure body, makes institute State wavelength conversion layer to separate from described semiconductor stacked structure body.Described separate layer prevent likely because of because of from The light of semiconductor stacked structure body release and the xanthochromia of the fluorophor in the described wavelength conversion layer that causes.

(such as, described distributed Bragg reflector can be by being alternately arranged the different multiple insulating barriers of refractive index SiO2/TiO2Or SiO2/Nb2O5) and formed.Described distributed Bragg reflector is by adjusting these insulation The optical thickness of layer, makes the light transmission generated at described active layer, and is reflected in the change of described wavelength conversion layer The light changed.

It addition, described stress relaxation layer relaxes the stress caused in described distributed Bragg reflector, anti- Only described distributed Bragg reflector is peeled off from layer (such as, semiconductor stacked structure body) below. Described stress relaxation layer can be formed by spin-on glasses layer (SOG) or porous silicon oxide film.

It addition, highly hard transparent resins can cover described wavelength conversion layer.Here, highly hard transparent resins Refer to the transparent resin that Shore durometer number is more than 60A.

In several embodiments, described light-emitting diode chip for backlight unit can also include being positioned at below described substrate Bottom distributed Bragg reflector.Described bottom distributed Bragg reflector produces not only in active layer Raw light, for the almost all region in visible light region, all can have relatively high reflectance.Such as, Described bottom distributed Bragg reflector is for the light of blue region, the light of green area and red area Light have more than 90% reflectance.And, described bottom distributed Bragg reflector can be provided with Metal level.Metal level can be formed by reflective metals.

It addition, described supplemantary electrode can have compares the width that described electrode is narrower, and from described electrode more Far, variable-width must be the narrowest.Accordingly, described supplemantary electrode stably can be pasted on described electrode, The reliability of the technique of bonding wire after can ensureing.

In several embodiments, the upper side of described wavelength conversion layer the most smooth (flat).Real at other Execute in example, the upper side of described wavelength conversion layer surface texture based on semiconductor stacked structure body (topology) it is formed uniformly.

In several embodiments, the electrode being electrically connected to described semiconductor stacked structure body can include electrical connection In described first conductive-type semiconductor layer the first electrode, be electrically connected to described second conductive-type semiconductor layer The second electrode.And, it is attached that described supplemantary electrode can include being formed at first on described first electrode Add electrode;It is formed at the second supplemantary electrode on described second electrode.Described first supplemantary electrode and second Supplemantary electrode runs through described wavelength conversion layer and is exposed to outside.And, described first supplemantary electrode and The upper side of two supplemantary electrodes can be consistent with the upper side of described wavelength conversion layer.

Unlike this, the electrode being electrically connected to described semiconductor stacked structure body can be electrically connected to described First conductive-type semiconductor layer.Described second conductive-type semiconductor layer is positioned at described substrate and described first leads Between electricity type semiconductor layer.Now, it is connected on the electrode of described second conductive-type semiconductor layer likely It is formed without supplemantary electrode.

And then, described wavelength conversion layer can cover the side of described substrate.Accordingly, for from the side of substrate The light of face release also is able to perform wavelength conversion.The thickness of the wavelength conversion layer of described substrate side surfaces is substantially Can be identical with the thickness of the wavelength conversion layer on described semiconductor stacked structure body top.

According to the light-emitting diode chip for backlight unit of the another form of the present invention, including: substrate;Multiple semiconductor multilayers Structure, is positioned on described substrate, includes the first conductive-type semiconductor layer, active layer and second respectively Conductive-type semiconductor layer;First electrode, is electrically connected to a semiconductor stacked structure body;Second electrode, It is electrically connected to second half conductor laminate structure;First supplemantary electrode, is formed on described first electrode; Second supplemantary electrode, is formed on described second electrode;Wavelength conversion layer, covers the plurality of quasiconductor The top of laminate structure.And, described first supplemantary electrode and described second supplemantary electrode run through described Wavelength conversion layer.

And then, it is also possible to include the distribution being electrically connected to each other the plurality of semiconductor stacked structure body.

It addition, described light-emitting diode chip for backlight unit can also include getting involved in described wavelength conversion layer and described many Separate layer between individual semiconductor stacked structure body.Described separate layer is formed by insulating barrier.And then, described Separate layer can include further getting involved in described wavelength conversion layer and the plurality of semiconductor stacked structure body it Between distributed Bragg reflector.And, stress relaxation layer can be got involved in described distributed Bragg reflector And between the plurality of semiconductor stacked structure body.

Described first supplemantary electrode and the second supplemantary electrode can have respectively than described first electrode and the second electricity The most narrower width, and, described first supplemantary electrode and the second supplemantary electrode are respectively from described first electricity Pole and the second electrode are the most remote, and width becomes the narrowest.

It addition, described first electrode is electrically coupleable to the first conduction of one semiconductor stacked structure body Type semiconductor layer, described second electrode is electrically coupleable to the second of another semiconductor stacked structure body described Conductive-type semiconductor layer.

Another form according to the present invention, it is provided that a kind of Light-Emitting Diode being equipped with light-emitting diode chip for backlight unit Packaging part.This packaging part include lead terminal, light-emitting diode chip for backlight unit and connect described lead terminal and The bonding wire of described light-emitting diode chip for backlight unit.Described bonding wire connects described light-emitting diode chip for backlight unit Supplemantary electrode and described lead terminal.

The method for manufacturing LED chip of the another form according to the present invention includes: supporting on substrate Arranging multiple bare chip, each described bare chip includes substrate, semiconductor stacked structure body, is electrically connected to The electrode of described semiconductor stacked structure body, this semiconductor stacked structure body is the nitrogen being positioned on described substrate Change gallium based compound semiconductor stepped construction, including the first conductive-type semiconductor layer, active layer and second Conductive-type semiconductor layer;;The electrode of bare chip each described is formed supplemantary electrode;In described support Formed on substrate and cover the plurality of bare chip and the clear coat of described supplemantary electrode;Remove described transparent The top of coating, exposes described supplemantary electrode;Remove described support substrate;Separate described clear coat, To be separated into single light-emitting diode chip for backlight unit.

Owing to forming uniform clear coat on the bare chip supported on substrate, therefore can also be at naked core The substrate side surfaces of sheet forms uniform clear coat.And, by using supplemantary electrode, can be at naked core Clear coat is formed with uniform thickness on sheet, and can easily bonding wire.And then, due to described Support group plate can be removed, and therefore can reduce the heat dissipation path of the light generated in active layer.

Described clear coat can comprise multiple material according to its application target.Such as, described coating not office It is limited to this, it may include fluorophor or diffusion material.Accordingly, described clear coat is applicable as wavelength conversion Layer or diffusion layer.

The electrode being electrically connected to described semiconductor stacked structure body can include being electrically connected to described first conductivity type First electrode of semiconductor layer and the second electrode being electrically connected to described second conductive-type semiconductor layer.And, Form the step of described supplemantary electrode to may be included in and form the first supplemantary electrode, in institute on described first electrode State and on the second electrode, form the second supplemantary electrode.

The upper side of described first supplemantary electrode and the second supplemantary electrode can be located at identical height.Accordingly, exist After eliminating the top of described clear coat, the upper side of clear coat and described first supplemantary electrode and The upper side of the second supplemantary electrode may be located on identical face.

In several embodiments, described bare chip can be arranged in by the step forming described supplemantary electrode First carry out in advance before supporting substrate.In other embodiments, the step forming described supplemantary electrode can be Perform after described bare chip is arranged in support substrate.

And then, described method may also include that to be formed before forming described clear coat and covers described support The separate layer of the multiple bare chips arranged on substrate.

Described separate layer can be formed by single insulating barrier or multiple insulating barrier, and can by transparent resin, Silicon oxide film or silicon nitride film are formed.And, described separate layer can also include stress relaxation layer, described Distributed Bragg reflector can be formed on described stress relaxation layer.

In several embodiments, described bare chip can also include being positioned on described semiconductor stacked structure body The distributed Bragg reflector in portion.And, described bare chip can also include getting involved in described distribution Bradley Stress relaxation layer between lattice reflector and described semiconductor stacked structure body.

It addition, the step removing described support substrate can perform before separating described clear coat, but It is not limited thereto, it is also possible to performed before removing the top of described clear coat, or is separating institute Perform after stating clear coat.

In several embodiments, described bare chip can include the multiple semiconductor layers being positioned on described substrate Lamination structural body.And then, described bare chip can also include being connected with each other the plurality of semiconductor stacked structure Multiple distributions of body.

And, described bare chip may also include the separation being positioned at the plurality of semiconductor stacked structure body top Layer.Described separate layer can be formed by insulating barrier, and can include distributed Bragg reflector.Further, institute State separate layer can farther include to get involved in described distributed Bragg reflector and described semiconductor stacked structure Stress relaxation layer between body.

The Light-Emitting Diode packaging part of the another form according to the present invention, including: sub-base substrate;Possess First conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer, and possess and be electrically connected to institute State the first electrode of the first conductive-type semiconductor layer and be electrically connected to the of described second conductive-type semiconductor layer Two electrodes, at least one in being arranged above with described first electrode and the second electrode, be mounted on described Bare chip on sub-base substrate;Expose described first electrode and second being formed at above described bare chip At least one in electrode, and the above of described bare chip and side are covered as one, and at least cover The wavelength conversion layer of an above part for described sub-base substrate.

Here, described sub-base substrate can include the multiple slits formed along the side of described bare chip.

And, the plurality of slit each can have opening shape.

And, described wavelength conversion layer can be by the described son of at least some of covering in the plurality of slit The inner side of base substrate.

It addition, described sub-base substrate and described bare chip can carry out metal bonding.

And, described Light-Emitting Diode packaging part also includes: be formed with the power supply substrate for application lead-in wire; Electrically connect described power supply for application lead-in wire and described first electrode and the bonding wire of described second electrode;Bag Seal the lens of described bare chip.

The manufacture method of the Light-Emitting Diode packaging part of the another form according to the present invention, comprises the steps: Prepare sub-base substrate;The first conductive-type semiconductor layer, active layer and the second conductivity type will be included respectively Multiple bare chips of semiconductor layer are mounted on described sub-base substrate;Formation is electrically connected to described first and leads Electricity type semiconductor layer the first electrode, and formed be electrically connected to the second of described second conductive-type semiconductor layer Electrode;Formed to expose and be formed in above described first electrode of described bare chip and the second electrode extremely Few one, the above of described bare chip and side are covered as one, and at least cover described sub-base base The wavelength conversion layer of an above part for plate.

Here, the step forming described first electrode and the second electrode can include step: by described first electricity At least one in pole and the second electrode is formed at above described bare chip.

It addition, the manufacture method of described Light-Emitting Diode packaging part can include step further: utilize mould Described first electrode and the second electrode are pressurizeed, to avoid described mould and described first electrode and the second electricity Gap is produced between pole.

Here, the step forming described wavelength conversion layer can include step: in the inner space of described mould Inject the resin containing fluorophor and solidify.

It addition, the step preparing described sub-base substrate can include step: along mounting described bare chip Region forms multiple slit.

Here, the plurality of slit can form opening shape respectively.

And, the step forming described wavelength conversion layer can include step: is formed by described wavelength conversion layer For being covered the inner side of described sub-base substrate by a part of slit in the plurality of slit.

And, the manufacture method of described light emission diode package member may further comprise the step of: and becomes at described wavelength Change formation transparent resin layer between layer and described bare chip.

It addition, the manufacture method of described Light-Emitting Diode packaging part further comprises the steps of: described sub-base base Plate cuts in units of single light emitting diode chip.

Here, the manufacture method of described Light-Emitting Diode packaging part can also include step: have lead-in wire Substrate on mount cut described single bare chip;By described first electrode and the second electrode difference Electrically connect with bonding wire;Form the lens encapsulating described single light-emitting diode chip for backlight unit.

Technique effect

In accordance with the invention it is possible to provide for also being able to perform wavelength change by the light of the side release of substrate The light-emitting diode chip for backlight unit changed.

And, using the teaching of the invention it is possible to provide by using supplemantary electrode, can also be easily while performing wavelength conversion Ground performs the light-emitting diode chip for backlight unit of wire bonding.

Further, according to the present invention, by using separate layer, it is possible to prevent the fluorophor in wavelength conversion layer Because of in semiconductor stacked structure body release light and sustain damage.

And, described separate layer includes distributed Bragg reflector, it is possible to prevent from converting at wavelength conversion layer Light be again incident on portion in semiconductor stacked structure body, hereby it is possible to improve light efficiency.

Accompanying drawing explanation

Fig. 1 is the sectional view for light-emitting diode chip for backlight unit that one embodiment of the invention provides is described.

The section view of the Fig. 2 light-emitting diode chip for backlight unit for providing according to another embodiment of the present invention for explanation Figure.

Fig. 3 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Fig. 4 is the sectional view for light-emitting diode chip for backlight unit that further embodiment of this invention provides is described.

Fig. 5 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Fig. 6 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Fig. 7 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Fig. 8 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Fig. 9 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Figure 10 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Figure 11 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Figure 12 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Figure 13 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Figure 14 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Figure 15 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Figure 16 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Figure 17 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Figure 18 is the sectional view for light emitting diode chip that further embodiment of this invention provides is described.

Figure 19 is for for illustrating to carry the luminescence two of the light-emitting diode chip for backlight unit that one embodiment of the invention provides The sectional view of pole pipe packaging part.

Figure 20 is for for illustrating that the method for manufacturing LED chip that one embodiment of the invention provides is many Individual sectional view.

Figure 21 is the upper plane figure for Light-Emitting Diode that further embodiment of this invention provides is described.

Figure 22 is the figure of the section illustrating the light emitting diode observing Figure 21 from C-C ' line.

Figure 23 is the sub-installation base plate illustrating and forming multiple light emitting diode according to one embodiment of the invention Figure.

Figure 24 is the figure amplifying the region represented in Figure 23 with circle.

Figure 25 is the manufacture method for light emission diode package member that one embodiment of the invention provides is described Flow chart.

Figure 26 for being shown respectively the Light-Emitting Diode packaging part of one embodiment of the invention offer according to step The figure of manufacture method.

Figure 27 is for for illustrating to carry the Light-Emitting Diode of the light emitting diode that one embodiment of the invention provides The sectional view of packaging part.

Figure 28 is the sectional view for light emitting diode that another embodiment of the present invention provides is described.

Detailed description of the invention

Hereinafter, each embodiment that present invention will be described in detail with reference to the accompanying.Embodiment introduced below is to make There is provided for example, so that the thought of the present invention is passed to those skilled in the art fully.Therefore, The invention is not limited in embodiment explained below, other forms can be embodied as.And, at figure In, the width of element, length, thickness etc. are also possible to be represented turgidly, to facilitate explanation. Throughout the specification, identical reference represents identical element.

Fig. 1 is the sectional view for light-emitting diode chip for backlight unit 101 that one embodiment of the invention provides is described.

Light-emitting diode chip for backlight unit 101 includes: substrate 21;Including the first conductive-type semiconductor layer 25, activity Layer 27 and the gallium nitride semiconductor stacked structure body 30 of the second conductive-type semiconductor layer 29;First electricity Pole 41;Second electrode 42;First supplemantary electrode 43;Second supplemantary electrode 44 and clear coat (example As, wavelength conversion layer 50).And, can be situated between the first conductive-type semiconductor layer 25 and substrate 21 Enter cushion 23.

The upper surface that substrate 21 has residing for semiconductor stacked structure body is in opposite direction with described upper surface Lower surface, the side of connection upper and lower surface.As long as substrate 21 transparency carrier is then the most particularly Limit, can be can substrate (such as, sapphire, carborundum, the point of growing nitride semiconductor layer Spar or silicon etc.).Substrate 21 can be thicker relative to semiconductor stacked structure body, semiconductor stacked structure A part for the light generated on body can be by the side release of substrate 21.

Described active layer 27, described first and second conductive-type semiconductor layers 25,29 can be by III-N system The compound semiconductor of row, such as, is formed by (Al, Ga, In) N quasiconductor.Described first and second conductions Type semiconductor layer 25,29 can be respectively single or multiple lift.Such as, described first conductive-type semiconductor layer 25 and/or second conductive-type semiconductor layer 29 can include contact layer and clad (Clad layer), and Superlattice layer can also be included.And, described active layer 27 can be single quantum or MQW Structure.Such as, described first conductive-type semiconductor layer can be N-shaped, described second conductive-type semiconductor Layer can be p-type, but is not limited thereto, can be in contrast.Cushion 23 is at substrate 21 and Relax lattice mismatch between one conductive-type semiconductor layer 25, reduce within semiconductor layer 25,27,29 The defect concentration produced.

It addition, the first electrode 41 is contacted with the surface of the exposure of the first conductive-type semiconductor layer 25 and with One conductive-type semiconductor layer 25 electrically connects.And, the second electrode 42 is positioned at the second conductive-type semiconductor layer The top of 29 and electrically connect with the second conductive-type semiconductor layer 29.First electrode 41 and the second electrode 42 Such as can include Ti, Cu, Ni, Al, Au or Cr, it is also possible to by Ti, Cu, Ni, Al, Au or Plural material in Cr is formed.And, for current dissipation, such as Ni/Au, ITO, IZO, The transparency conducting layer of ZnO can be formed on the second conductive-type semiconductor layer 29, and the second electrode 42 can connect It is connected to described transparency conducting layer.

First supplemantary electrode 43 and the second supplemantary electrode 44 lay respectively at the first electrode 41 and the second electrode On 42.First supplemantary electrode 43 has with the second supplemantary electrode 44 compares the first electrode 41 and second The width that the width of electrode 42 is narrower.That is, the first supplemantary electrode 43 is defined to the upper of the first electrode 41 Portion, the second supplemantary electrode 44 is defined to the top of the second electrode 42.And, the first supplemantary electrode 43 Can to have distance the first electrode 41 and the second electrode 42 respectively the most remote with the second supplemantary electrode 44, then width The narrowest shape.Based on this shape, the first supplemantary electrode 43 and the second supplemantary electrode 44 can be distinguished surely Surely it is pasted on the first electrode 41 and the second electrode 42 and keeps, beneficially the subsequent technique such as wire bonding. In order to make the first supplemantary electrode 43 and the second supplemantary electrode 44 can be stably maintained at the first electrode respectively 41 and second on electrode 42, the ratio of the height relative to bottom surface can be limited to preset range it In.

Wavelength conversion layer 50 can include at epoxy resin or silica gel and be formed into fluorophor, or can only by Fluorophor is formed.Such as, wavelength conversion layer 50 can be after epoxy resin or silica gel include fluorophor It is coated with and is formed.At this point it is possible to use mould, have uniformly to be formed in the side of substrate 21 The wavelength conversion layer 50 of thickness.At this point it is possible to be arranged to mould make the first supplemantary electrode 43 and second Whole or the local of the upper surface of supplemantary electrode 44 exposes, and is consequently formed wavelength conversion layer 50, or makes After resin-coated one-tenth containing fluorophor covers the first supplemantary electrode 43 and the second supplemantary electrode 44, right Resin carries out mechanical lapping, thus can expose the first supplemantary electrode 43 and upper table of the second supplemantary electrode 44 Face.Accordingly, the smooth wavelength conversion layer of upper surface 50, and the first supplemantary electrode 43 and second can be formed The through wavelength conversion layer of supplemantary electrode 44 50 and be exposed to outside.

And then, wavelength conversion layer 50 such as can have a refractive index within the scope of 1.4~2.0, and in order to Adjust refractive index, TiO can be mixed within wavelength conversion layer 502、SiO2、Y2O3In powder.

It addition, as it can be seen, the upper surface of the first supplemantary electrode 43 can be with the second supplemantary electrode 44 Upper surface is positioned at identical height.Accordingly, the second conductive-type semiconductor layer 29 and active layer 27 are being removed A part and when exposing the first conductive-type semiconductor layer 25, as it can be seen, the first supplemantary electrode 43 can More longer than the second supplemantary electrode 44.

Wavelength conversion layer 50 can cover side and the top of semiconductor stacked structure body 30 of substrate 21.According to This, it is provided that is not only for the light discharged by the upper surface of semiconductor stacked structure body 30, also for It also is able to carry out the light-emitting diode chip for backlight unit 101 of wavelength conversion by the light of the side release of substrate 21.

Fig. 2 is the section view for light-emitting diode chip for backlight unit 102 that another embodiment of the present invention provides is described Figure.

With reference to Fig. 2, the light-emitting diode chip for backlight unit 102 that the present embodiment provides generally with the luminescence two of Fig. 1 Pole die 101 is substantially similar, and it is anti-that difference is to farther include separate layer 33, bottom distribution bragg Emitter 45 and metal level 47.And, transparency conducting layer 31 is got involved in described separate layer 33 and described Between second conductive-type semiconductor layer 29 of semiconductor stacked structure body 30.Second electrode 42 may connect to Described transparency conducting layer 31.In order to avoid repeating, for the Light-Emitting Diode with the embodiment of preceding description Omission is described in detail by the element that chip 101 is identical.

Separate layer 33 can cover described semiconductor stacked structure body 30 and the top of transparency conducting layer 31.Root According to described separate layer 33, described wavelength conversion layer 50 separates from semiconductor stacked structure body 30.Separate layer 33 can be formed by such as silicon nitride or silicon oxide.And, described separate layer 33 can be by alternately stacking Insulating barrier (such as, the SiO that refractive index is different2/TiO2Or SiO2/Nb2O5) distributed Bragg reflector Formed.Now, by adjusting the optical thickness of the different insulating barrier of refractive index, described separate layer 33 can make At the light transmission that active layer 27 generates, and reflect from external incident or the light that converted by wavelength conversion layer 50. This distributed Bragg reflector has the light of the long wavelength region in reflection visible light region, and makes living Property short wavelength's visible light of generating of the layer 27 or reflection bandwidth that passes through of ultraviolet.Especially, owing to comparing TiO2, Nb2O5Absorptivity relatively small, therefore to prevent light loss, it is more preferred to utilize SiO2/Nb2O5Form distributed Bragg reflector.

It addition, be provided with bottom distributed Bragg reflector 45 in the bottom of described substrate 21.Under described Distributed Bragg reflector device 45 is to be formed by the mutually different insulating barrier of alternately stacking refractive index, Not only for the light (such as, the light generated in active layer 27) of blue wavelength region, also for yellow The light of wavelength region or the green and/or light of red wavelength region, it may have relatively high (preferably 90% with On) reflectance.And then, described bottom distributed Bragg reflector 45 can also be such as 400~700nm Wave-length coverage within have on the whole more than 90% emissivity.

The bottom distributed Bragg reflector 45 in wide wavelength region with relatively high reflectance is logical Cross the respective optical thickness of the material layer controlling stacking repeatedly and formed.Described bottom distribution bragg Reflector 45 the most alternately stacking is by SiO2Constitute ground floor and by TiO2Constitute the second layer and Formed, or alternately stacking is by SiO2Constitute ground floor and by Nb2O5Constitute the second layer and shape Become.Due to Nb2O5Absorptivity compare TiO2Relatively small, be the most more preferably alternately arranged by SiO2Constitute ground floor and by Nb2O5The second layer constituted.The stacking number of ground floor and the second layer is the most, The reflectance of distributed Bragg reflector 45 is the most stable, such as, and the stacking of distributed Bragg reflector 40 Number can be more than 50 layers, i.e. 25 to more than.

Alternately multiple ground floors of stacking or the second layer are without all having identical thickness, multiple ground floors It is chosen as not only for the light generated in active layer 27 with the thickness of the second layer, for visible light region Other wavelength also have relatively high reflectance.And, for specific wavelength bandwidth, can stacking reflectance Much higher distributed Bragg reflector and form described bottom distributed Bragg reflector 45.

By using described bottom distributed Bragg reflector 45, when the light converted at wavelength conversion layer 50 When being again incident on substrate 21 side, can again the light of this incidence of secondary reflection and be discharged into outside, hereby it is possible to Improve light efficiency.

It addition, the ground floor of described distributed Bragg reflector 45 and last layer can be SiO2.Logical Cross SiO2It is arranged in ground floor and last layer of distributed Bragg reflector 45, it is possible to cloth will be distributed Bragg reflector 45 is stably pasted on substrate 21, and available described last SiO2Under layer protection Distributed Bragg reflector device 45.

Metal level 47 is positioned at the bottom of described bottom distributed Bragg reflector 45.Described metal level 47 For reflectance-transmittance bottom distributed Bragg reflector 4 light and can be by the reflective metals shape of such as aluminum Become but it also may formed by the metal outside reflective metals.Especially, metal level 47 contributes to tying stacking The heat that structure body 30 produces is discharged into outside, therefore improves the exothermicity of light-emitting diode chip for backlight unit 102.

According to the present embodiment, by being had the distribution bragg of high reflectance by the visible light for long wavelength Reflector forms separate layer 33, and the light in wavelength conversion layer 50 conversion can be prevented to be again incident on quasiconductor Within laminate structure 30.And, by using bottom distributed Bragg reflector 45, when from outside Incide substrate 21 side or when the light of wavelength conversion layer 50 conversion incides substrate 21 side, Ke Yizai Secondary reflected such that it is able to improve light efficiency.

Fig. 3 is the section view for light-emitting diode chip for backlight unit 103 that another embodiment of the present invention provides is described Figure.

With reference to Fig. 3, light-emitting diode chip for backlight unit 103 and the light-emitting diode chip for backlight unit 102 with reference to Fig. 2 explanation Similar, difference is to arrange further on described separate layer 30 or replace described separate layer 30 at wavelength Stress relaxation layer 35 and described distribution bragg is got involved between transform layer 50 and semiconductor stacked structure body 30 Reflector 37.That is, stress relaxation layer 35 can be located at and (such as, divides on the upside of semiconductor stacked structure body 30 On interlayer 33), and top distributed Bragg reflector 37 is set in the upside of stress relaxation layer 35. Described stress relaxation layer 35 and described top distributed Bragg reflector 37 also function to the effect of separate layer.

Described top distributed Bragg reflector 37 can be by the different multiple insulation of alternately laminated refractive index Layer (such as, SiO2/TiO2Or SiO2/Nb2O5) and formed.Now, different by adjusting refractive index The optical thickness of multiple insulating barriers, described top distributed Bragg reflector 37 can make at active layer 27 raw Become light transmission, and reflection from external incident or wavelength conversion layer 50 conversion light.Described top is distributed Bragg reflector 37 has the light of the long wavelength region in reflection visible light region, and makes at active layer The reflection bandwidth that the 27 short wavelength's visible light generated or ultraviolet pass through.Especially, due to Nb2O5Light inhale Yield compares TiO2Relatively small, therefore to prevent light loss, it is more preferred to utilize SiO2/Nb2O5 Form distributed Bragg reflector.

It addition, stress relaxation layer 35 can be formed by spin-on glasses layer (SOG) or porous silicon oxide film. Described stress relaxation layer 35 relaxes the stress of described top distributed Bragg reflector 37, prevents upper part The stripping of cloth Bragg reflector 37.

As multiple insulating barriers (such as, SiO that alternately laminated refractive index is different2/TiO2Or SiO2/Nb2O5) When forming top distributed Bragg reflector 37, due to the layer of the multiple relative high density of stacking, therefore it is distributed The stress produced in Bragg reflector becomes big.Accordingly, distributed Bragg reflector is easily on the downside of it Layer (such as, separate layer 33) is peeled off.Therefore, by stress relaxation layer 35 being arranged in top distribution The downside of Bragg reflector 37, can prevent the stripping of top distributed Bragg reflector 37.

It addition, in the present embodiment, described separate layer 33 can be formed as monolayer (such as, by silicon nitride Or silicon oxide is formed), it is also possible to it is omitted.

Fig. 4 is the section view for light-emitting diode chip for backlight unit 104 that another embodiment of the present invention provides is described Figure.

With reference to Fig. 4, in Fig. 1 to Fig. 3 above with horizontal type light-emitting diode chip for backlight unit 101,102, It is illustrated as a example by 103, but described light-emitting diode chip for backlight unit 104 is vertical type light emitting diode chip. Described light-emitting diode chip for backlight unit 104 includes: substrate 51;Possess the first conductive-type semiconductor layer 25, activity Layer 27 and the semiconductor stacked structure 30 of the second conductive-type semiconductor layer 29;Upper electrode 41;Additional Electrode 43 and wavelength conversion layer 60.Described wavelength conversion layer 60 can be according to separate layer from semiconductor layer Lamination structural body 30 separates.Such as, described separate layer can include as with reference to the separate layer 33 described in Fig. 2, But also cloth can be distributed such as the explanation of Fig. 3 including separate layer 33, stress relaxation layer 35 and/or top Bragg reflector 37.And then, described light-emitting diode chip for backlight unit 104 can include reflective metal layer 55, barrier Metal level 57 and bond wire 53.

Substrate 51 is different from the growth substrate for grown semiconductor layer 25,27,29, is to be pasted on Secondary substrate through the compound semiconductor layer 25,27,29 of growth.Described substrate 51 can be conduction Type substrate (such as, metal basal board or semiconductor substrate) but be not limited to this, it is also possible to be such as sapphire Insulated substrate.

Semiconductor stacked structure body 30 is positioned on substrate 51, including the first conductive-type semiconductor layer 25, Active layer 27 and the second conductive-type semiconductor layer 29.Here, described semiconductor stacked structure body 30 with General vertical type light emitting diode is identical, and p-type compound semiconductor layer 29 is compared N-shaped compound and partly led Body layer 25 is closer to substrate 51 side.Described semiconductor stacked structure body 30 may be located at substrate 51 On a part of region.That is, substrate 51 has relative to the broader area of semiconductor stacked structure body 30, Within semiconductor stacked structure body 30 can be located at the region of the surrounded by edges by described substrate 51.

Due to described first conductive-type semiconductor layer 25, active layer 27 and the second conductive-type semiconductor layer 29 is similar with the semiconductor layer with reference to Fig. 1 explanation, therefore omits detailed description.It addition, by making electricity Hinder relatively small n-type compound semiconductor layer 25 and be positioned at the opposition side of substrate 51, can be at N-shaped compound Coarse surface is formed in the upper side of semiconductor layer 25.

Reflective metal layer 55, barrier can be got involved between described substrate 51 and semiconductor stacked structure body 30 Metal level 57 can be got involved and surround reflective metal layer 55 between substrate 51 and reflective metal layer 55. And then, described substrate 51 can be bonded on semiconductor stacked structure body 30 by bond wire 53.Described Reflective metal layer 55 and described barrier metal layer 57 can play and be electrically connected to described second conductive-type semiconductor The effect of the lower electrode of layer 29.

It addition, described semiconductor stacked structure body 30 top is provided with wavelength conversion layer 60.Described wavelength The position of transform layer 60 can be defined in described semiconductor stacked structure body 30 top, but is not limited thereto, The side of described semiconductor stacked structure body 30 can also be arranged on, and then cover the side of described substrate 51 Face.

Separate layer 33 covers the upper side of semiconductor stacked structure body 30, and can on separate layer 33 Set gradually stress relaxation layer 35 and top distributed Bragg reflector 37.Described insulating barrier 33, stress Relaxation layer 35 and top distributed Bragg reflector 37 can use exhausted with illustrate with reference to Fig. 3 The material that edge layer, stress relaxation layer and top distributed Bragg reflector are identical, therefore to avoid weight Multiple, omit detailed description.And, described separate layer 33 can also be omitted.Further, such as Fig. 2 In embodiment as explanation, described separate layer 33 can be distributed Bragg reflector, now, stress Relaxation layer 35 and top distributed Bragg reflector 37 can be omitted.

It addition, upper electrode 41 is positioned at semiconductor stacked structure body 30, such as the first conductive-type semiconductor Electrically connecting with the first conductive-type semiconductor layer 25 on 25, supplemantary electrode 43 is positioned at described upper electrode On 41.Described supplemantary electrode 43 can have with above with reference to Fig. 1 explanation the first supplemantary electrode 43 or Shape that second supplemantary electrode 44 is identical and structure.Described supplemantary electrode 43 is by described wavelength conversion layer 60 are externally exposed.

Fig. 5 is the sectional view for light-emitting diode chip for backlight unit 105 that further embodiment of this invention provides is described.

With reference to Fig. 5, Light-Emitting Diode 105 is with the light-emitting diode chip for backlight unit 101 with reference to Fig. 1 explanation substantially Similar, difference is that wavelength conversion layer 50 separates from semiconductor stacked structure body 30.That is, become at wavelength Change to get involved between layer 50 and semiconductor stacked structure body 30 and have separate layer 61.

Along with wavelength conversion layer 50 separates from semiconductor stacked structure body 30, it is possible to prevent wavelength conversion layer The resin of 50 or fluorophor deteriorate because of the light that generates in active layer 27.Separate layer 61 is all right Get involved between the side of substrate 21 and wavelength conversion layer 50.

Described separate layer 61 can be formed by transparent resin, silicon oxide film, silicon nitride film.In order to reduce to The heat of fluorophor transmission, the thermal conductivity of described separate layer 61 is the lowest more favourable, such as, can have and be less than The thermal conductivity of 3W/mK.And, when described separate layer 61 is formed by transparent resin, in order to adjust The refractive index of ming tree fat, can be mixed into TiO in transparent resin2、SiO2、Y2O3In powder.And then, Described separate layer 61 is possible not only to be formed as monolayer, it is also possible to be formed as multiple layer.Institute is constituted by adjusting State refractive index and the thickness of multiple layers of separate layer 61, can be formed as making at active layer by separate layer 61 27 light transmissions produced, and be reflected in wavelength conversion layer 50 and convert and incide light-emitting diode chip for backlight unit 105 Within light.Such as, multiple layers (such as, TiO that stacking refractive index repeatedly is different can be passed through2And SiO2), Formed optionally make active layer 27 generate light transmission or be reflected in wavelength conversion layer 43 conversion light Distributed Bragg reflector.And then, when described separate layer 61 includes distributed Bragg reflector, for The described distributed Bragg reflector is prevented to be stripped, can be semiconductor stacked structure body 30 and described point The stress relaxation layer of the example of the light emitting diode chip 106 such as Fig. 6 is got involved between cloth Bragg reflector 62。

Fig. 7 is the sectional view for light emitting diode chip 107 that further embodiment of this invention provides is described.

With reference to Fig. 7, light-emitting diode chip for backlight unit 106 and the light-emitting diode chip for backlight unit 105 with reference to Fig. 5 explanation Substantially similar, difference be to farther include separate layer 33, bottom distributed Bragg reflector 45 and Metal level 47.And, transparency conducting layer 31 is got involved and is tied in described separate layer 33 and described semiconductor multilayer Between second conductive-type semiconductor layer 29 of structure body 30.Second electrode 42 may connect to described electrically conducting transparent Layer 31.Described separate layer 61 covers separate layer 33, makes wavelength conversion layer 50 farther away from semiconductor multilayer Structure 30.And then, when described separate layer 61 is distributed Bragg reflector, described in order to prevent The stripping of separate layer 61, can get involved such as Fig. 6 between separate layer 61 and semiconductor stacked structure body 30 Shown stress relaxation layer 62.

Described separate layer 33, bottom distributed Bragg reflector 45 and metal level 47 enter with reference to Fig. 2 Separate layer, bottom distributed Bragg reflector and the metal level of row explanation are identical, therefore to avoid weight Multiple, omit detailed description.And then, as illustrate with reference to Fig. 3, top distributed Blatt reflective Device 37 and stress relaxation layer 35 can be located at the top of semiconductor stacked structure body 30, the most described wavelength Transform layer 50 can semiconductor stacked structure body 30 further away from each other.

Fig. 8 is the section view for light emitting diode chip 108 that another embodiment of the present invention provides is described Figure.

With reference to Fig. 8, light-emitting diode chip for backlight unit 107 and the light emitting diode chip 105 with reference to Fig. 5 explanation Substantially similar, difference is to add transparent resin 63 on wavelength conversion layer 50.That is, transparent resin 63 cover wavelength conversion layer 50.Transparent resin 63 protects fluorophor from the impact of outside moisture.In order to Preventing from absorbing dampness, described transparent resin 63 preferably has high rigidity, and (such as, Shore durometer number is More than 60A).Described highly hard transparent resins 63, when separate layer 61 is formed by transparent resin, can have Compare the higher hardness number of separate layer 61.

And then, in order to adjust the refractive index of described highly hard transparent resins 63, can be at transparent resin 63 Within be mixed into TiO2、SiO2、Y2O3In powder.

Fig. 9 is the sectional view for light-emitting diode chip for backlight unit 109 that further embodiment of this invention provides is described.

With reference to Fig. 9, described light emitting diode chip 109 and the light-emitting diode chip for backlight unit with reference to Fig. 8 explanation 108 is substantially similar, difference be to farther include separate layer 33, bottom distributed Bragg reflector 45, Metal level 47.And, in described separate layer 33 and the second conduction of described semiconductor stacked structure body 30 Get involved between type semiconductor layer 29 and have transparency conducting layer 31.Second electrode 42 may connect to described transparent lead Electric layer 31.Described separate layer 61 covers separate layer 33 so that wavelength conversion layer 50 is the most partly led Body laminate structure 30.

Described separate layer 33, bottom distributed Bragg reflector 45 and metal level 47 and above reference figure Separate layer, bottom distributed Bragg reflector and the metal level of 2 explanations are identical, therefore to avoid weight Multiple, omit detailed description.And then, as illustrate with reference to Fig. 3, top distributed Blatt reflective Device 37 and stress relaxation layer 35 can be located at the top of semiconductor stacked structure body 30, and the most described wavelength becomes Changing layer 50 can semiconductor stacked structure body 30 further away from each other.

Figure 10 is the section view for light-emitting diode chip for backlight unit 110 that further embodiment of this invention provides is described Figure.

With reference to Figure 10, described light-emitting diode chip for backlight unit 110 and the light-emitting diode chip for backlight unit with reference to Fig. 1 explanation 101 is roughly the same, and difference is that the upper surface of the first supplemantary electrode 43 is less than the second supplemantary electrode 44 Upper surface.

Accordingly, although the upper surface general planar of wavelength conversion layer 70, but at the first supplemantary electrode 43 Near to have ladder poor.The wavelength conversion layer 70 with this structure is available along semiconductor multilayer knot The Mold Making that the surface configuration of structure body is special.

Figure 11 is the section view for light-emitting diode chip for backlight unit 111 that further embodiment of this invention provides is described Figure.

With reference to Figure 11, described light-emitting diode chip for backlight unit 111 and the light-emitting diodes tube core with reference to Figure 10 explanation Sheet 110 is substantially similar, and difference is to farther include separate layer 33, bottom distributed Bragg reflector 45 And metal level 47.And, transparency conducting layer 31 is got involved in described insulating barrier 33 and described semiconductor layer Between second conductive-type semiconductor layer 29 of lamination structural body 30.Second electrode 42 may connect to described transparent Conductive layer 31.

Described separate layer 33, bottom distributed Bragg reflector 45 and metal level 47 and above reference figure Separate layer, bottom distributed Bragg reflector and the metal level of 2 explanations are identical, therefore to avoid weight Multiple, omit detailed description.And then, as illustrate with reference to Fig. 3, at described wavelength conversion layer 70 And stress relaxation layer 35 and top distributed Bragg reflector between semiconductor stacked structure body 30, can be got involved 37。

Figure 12 is the section view for light-emitting diode chip for backlight unit 112 that further embodiment of this invention provides is described Figure.

With reference to Figure 12, described light-emitting diode chip for backlight unit 112 and the light-emitting diodes tube core with reference to Figure 10 explanation Sheet 110 is substantially similar, and difference is that wavelength conversion layer 70 separates from semiconductor stacked structure body 30.That is, As illustrate with reference to Fig. 5, get involved between wavelength conversion layer 70 and semiconductor stacked structure body and have point Interlayer 71.Along with wavelength conversion layer 70 separates from semiconductor stacked structure body, it is possible to prevent wavelength conversion Resin or the fluorophor of layer 70 deteriorate because of the light that generates at active layer 27.Separate layer 71 is all right Get involved between the side of substrate 21 and wavelength conversion layer 70.

And, when described separate layer 71 includes distributed Bragg reflector, such as that described in reference Fig. 6 The stress relaxation layer 62 of sample can be got involved between separate layer 71 and semiconductor stacked structure body 30.

Figure 13 is the section view for light-emitting diode chip for backlight unit 113 that further embodiment of this invention provides is described Figure.

With reference to Figure 13, described light-emitting diode chip for backlight unit 113 and the light-emitting diodes tube core with reference to Figure 12 explanation Sheet 112 is substantially similar, and difference is to farther include separate layer 33, bottom distributed Bragg reflector 45 And metal level 47.And, transparency conducting layer 31 is got involved in described insulating barrier 33 and described semiconductor layer Between second conductive-type semiconductor layer 29 of lamination structural body 30.Second electrode 42 may connect to described transparent Conductive layer 31.Described separate layer 71 covers insulating barrier 33 makes wavelength conversion layer 70 the most partly lead Body laminate structure 30.

Described separate layer 33, bottom distributed Bragg reflector 45 and metal level 47 and above reference figure Separate layer, bottom distributed Bragg reflector and the metal level of 2 explanations are identical, therefore to avoid weight Multiple, omit detailed description.And then, as illustrate with reference to Fig. 3, top distributed Blatt reflective Device 37 and stress relaxation layer 35 can be located at the top of semiconductor stacked structure body 30, and the most described wavelength becomes Changing layer 70 can semiconductor stacked structure body 30 further away from each other.

Figure 14 is the section view for light emitting diode chip 114 that another embodiment of the present invention provides is described Figure.

With reference to Figure 14, light-emitting diode chip for backlight unit 114 is big with the light emitting diode chip with reference to Figure 12 explanation Causing similar, difference is to add transparent resin 73 on wavelength conversion layer 70.That is, transparent resin 73 Cover wavelength conversion layer 70.Transparent resin 73 protects fluorophor from the impact of outside moisture.In order to anti- Only absorbing dampness, described transparent resin 73 preferably has high rigidity, and (such as, Shore durometer number is 60A Above).Described highly hard transparent resins 73, when separate layer 71 is formed by transparent resin, can have phase Hardness number more higher than separate layer 71.

And then, in order to adjust the refractive index of described highly hard transparent resins 73, can be at transparent resin 73 Within be mixed into TiO2、SiO2、Y2O3In powder.

Figure 15 is the section view for light-emitting diode chip for backlight unit 115 that further embodiment of this invention provides is described Figure.

With reference to Figure 15, described light-emitting diode chip for backlight unit 115 and the light-emitting diodes tube core with reference to Figure 14 explanation Sheet 114 is substantially similar, and difference is to farther include separate layer 33, bottom distributed Bragg reflector 45 And metal level 47.And, transparency conducting layer 31 is got involved in described separate layer 33 and described semiconductor layer Between second conductive-type semiconductor layer 29 of lamination structural body 30.Second electrode 42 may connect to described transparent Conductive layer 31.Described separate layer 71 covers separate layer 33 makes wavelength conversion layer 50 the most partly lead Body laminate structure 30.

Described separate layer 33, bottom distributed Bragg reflector 45 and metal level 47 and above reference figure Separate layer, bottom distributed Bragg reflector and the metal level of 2 explanations are identical, therefore to avoid weight Multiple, omit detailed description.And then, as illustrate with reference to Fig. 3, top distributed Blatt reflective Device 37 and stress relaxation layer 35 can be located at the top of semiconductor stacked structure body 30, and the most described wavelength becomes Changing layer 70 can semiconductor stacked structure body 30 further away from each other.

Figure 16 is for cuing open of the light-emitting diode chip for backlight unit 116 according to further embodiment of this invention manufacture is described View.

With reference to Figure 16, light-emitting diode chip for backlight unit 116 and the light-emitting diode chip for backlight unit 101 with reference to Fig. 1 explanation Substantially similar, difference is to be provided with multiple semiconductor stacked structure body 30 on the base plate (21.Multiple half Conductor laminate structure can be electrically connected to each other by multiple distributions 83.Multiple distributions 83 connect one and half leads First conductive-type semiconductor layer 25 of body laminate structure 30 and the semiconductor stacked structure body adjacent with this Second conductive-type semiconductor layer 29 of 30, thus can form join-matrix, and multiple this series connection square Battle array can in parallel or anti-parallel connection connection.

It addition, for the first conductive-type semiconductor layer 25 and the second conduction preventing semiconductor stacked structure body Type semiconductor layer 29 forms short circuit because of distribution 39, can semiconductor stacked structure body and distribution 83 it Between get involved insulating barrier 81.Described insulating barrier 81 also acts as and makes multiple semiconductor stacked structure body 30 and wavelength The function of transform layer 50 separate layer spaced apart from each other.

It addition, the first electrode 41 and the second electrode 42 can lay respectively at mutually different semiconductor multilayer knot On structure body 30.And, in the present embodiment, for the first electrode 41 and formation of the second electrode 42 Position is not particularly limited.Such as, the first electrode 41 and the second electrode 42 can be formed in base On plate 21, it is also possible to be formed at the first conductive-type semiconductor layer 25 or the second conductive-type semiconductor layer 29 On.Now, described first electrode 41 and the second electrode 42 can be connected to the most not by distribution 83 On identical semiconductor stacked structure body 30.Divide on described first electrode 41 and the second electrode 42 Do not arrange the first supplemantary electrode 43 and the second supplemantary electrode 44.

Wavelength conversion layer 50 covers the plurality of semiconductor stacked structure body 30.Wavelength conversion layer 50 also covers The side of lid substrate 21.As illustrate with reference to Fig. 5, wavelength conversion layer 50 is according to separate layer 61 Can separate from semiconductor stacked structure body.

Figure 17 is the section view for light-emitting diode chip for backlight unit 117 that further embodiment of this invention provides is described Figure.

With reference to Figure 17, light emitting diode chip 117 and the light-emitting diode chip for backlight unit 115 with reference to Figure 16 explanation Substantially similar, difference is to farther include the second insulating barrier 85, bottom distributed Bragg reflector 45 And metal level 47, for ease of forming distribution 81, incline in the side of described semiconductor stacked structure body 30 Tiltedly formed.And, it is provided with transparent between insulating barrier 81 and each semiconductor stacked structure body 30 Conductive layer 31, transparency conducting layer 31 Ohmic contact is in the second conductive-type semiconductor layer 29.Distribution 83 is by one First conductive-type semiconductor layer 25 of individual semiconductor stacked structure body 30 is connected to the quasiconductor adjacent with this On second conductive-type semiconductor layer 29 (or transparency conducting layer 31) of laminate structure 30, thus may be used Form join-matrix, and this join-matrix can in parallel or anti-parallel connection connection.

It addition, insulating barrier 81 can cover transparency conducting layer 31, and then semiconductor stacked structure can be covered The side of body 30.And, in order to protect semiconductor stacked structure body 30 and multiple distribution 83, second is exhausted Edge layer 85 can cover semiconductor stacked structure body 30 and multiple distribution 83, and the second insulating barrier 85 covers Lid insulating barrier 83.Described insulating barrier 81 can be by the material film (example of identical material with the second insulating barrier 85 As, silicon oxide film or silicon nitride film) formed, and monolayer can be respectively formed as.Now, in order to prevent Stating the second insulating barrier 85 to peel off from insulating barrier 81, described second insulating barrier 85 can be relative to insulating barrier 81 Thinner.

Unlike this, the separate layer that described insulating barrier 81 and/or the second insulating barrier 85 illustrate with reference Fig. 2 33 are similar to, and can be formed by the distributed Bragg reflector of the different insulating barrier of alternately laminated refractive index.As As Fig. 2 illustrates, this distributed Bragg reflector makes the light transmission generated at active layer 27, and It is reflected in the light of wavelength conversion layer 50 conversion.Preferably, described second insulating barrier 85 is by distribution bragg Reflector is formed, and described insulating barrier 81 can be by the stress relaxation layer shape of SOG or porous silicon oxide film etc. Become.

Described wavelength conversion layer 50 is positioned at the second insulating barrier 85 top, described insulating barrier 81 and the second insulation Layer 85 has the effect of separate layer.On this basis, the separate layer 61 as illustrate with reference to Fig. 5 Can get involved between multiple semiconductor stacked structure bodies 30 and wavelength conversion layer 50.And, such as reference As Fig. 8 explanation, highly hard transparent resins 63 can cover wavelength conversion layer 50.

Figure 18 is the section view for light-emitting diode chip for backlight unit 118 that further embodiment of this invention provides is described Figure.

With reference to Figure 18, described light-emitting diode chip for backlight unit 118 and the light-emitting diodes tube core with reference to Figure 17 explanation Sheet 118 is roughly the same, and difference is to farther include stress relaxation layer 87 and top distributed Blatt reflective Device 89.

That is, top distributed Bragg reflector 89 can be located at multiple semiconductor stacked structure body 30 and wavelength Between transform layer 50, on this basis, at top distributed Bragg reflector 89 and multiple semiconductor layer Stress relaxation layer 87 can be set between lamination structural body 30.Described top distributed Bragg reflector 89 and ginseng The top distributed Bragg reflector 37 illustrated according to Fig. 3 is similar to, can be with different exhausted of alternately laminated refractive index Edge layer and formed.And, described stress relaxation layer 87 is identical with the stress relaxation layer 35 of Fig. 3, permissible Formed by SOG or porous silicon oxide film.Described top distributed Bragg reflector 89 and stress relaxation layer 87 effects also with the separate layer making described wavelength conversion layer 50 separate from semiconductor stacked structure body 30.

In the present embodiment, described insulating barrier 81 and the second insulating barrier 85 can form monolayer, and second is exhausted Edge layer 85 can be omitted.

In embodiment described above, fluorophor can be the fluorophor of YAG or TAG series, silicon The fluorophor of fluorophor, nitride or the nitrous oxides series of hydrochlorate series.And then, wavelength conversion layer 50, 60 or 70 fluorophor that can include identical type, but be not limited thereto, it is also possible to include two kinds with On fluorophor.And, although it is shown with the wavelength conversion layer 50,60 or 70 of monolayer and says Bright, but multiple wavelength conversion layer can be used, multiple wavelength conversion layers can include mutually different glimmering Body of light.

Figure 19 is for for illustrating the luminescence carrying light-emitting diode chip for backlight unit 101 that one embodiment of the invention provides The sectional view of diode packaging part.

With reference to Figure 19, light emission diode package member include for carry light emitting diode chip 101 and for Carry the base 91 of light emitting diode chip 101.And, described light emission diode package member can also wrap Containing bonding wire 95 and lens 97.

Described base 91 can be such as tellite, lead frame, ceramic substrate, including multiple Lead terminal 93a, 93b.First supplemantary electrode (the 43 of Fig. 1) of light emitting diode chip 101 and Two supplemantary electrodes (the 44 of Fig. 1) respectively by bonding wire 95 be electrically connected to multiple lead terminal 93a, 93b。

It addition, lens 97 covering luminousing diode chip 101.Lens 97 adjust light-emitting diode chip for backlight unit The sensing angle of 101 light discharged, makes light discharge along desired direction.Due to light emitting diode chip Being formed with wavelength conversion layer 50 on 101, the most described lens 97 are without comprising fluorophor.

In the present embodiment, enter for being equipped with the light emission diode package member of light-emitting diode chip for backlight unit 101 Go explanation, but illustrated with reference to Fig. 2 to Figure 17 before can also carrying on described light emission diode package member Light-emitting diode chip for backlight unit 101 to 117.

Hereinafter, the manufacture method of the light-emitting diode chip for backlight unit provided for the embodiment of the present invention carries out detailed Explanation.

Figure 20 is the manufacture method for light-emitting diode chip for backlight unit 101 that one embodiment of the invention provides is described Sectional view.

With reference to (a) of Figure 20, arrange bare chip 150 on substrate 121 supporting.Multiple bare chips 150 Can be arranged on support substrate 121 with identical spacing.As it is shown in figure 1, multiple bare chips 150 Including: substrate 21;Possess the first conductive-type semiconductor layer 25, active layer 27 and the second conductivity type partly to lead The gallium nitride semiconductor stacked structure body 30 of body layer 29;First electrode 41;Second electrode 42.And, Cushion 23 can be got involved between first conductive-type semiconductor layer 25 and substrate 21.That is, described bare chip 150 are equivalent to remove the first supplemantary electrode 43 and second in the light-emitting diode chip for backlight unit 101 of Fig. 1 adds Electrode 44 and the part of wavelength conversion layer 50, in order to avoid repeating, omit for bare chip 150 The detailed description of each element.

Support substrate 121 and support multiple bare chip 150, and be supported for making multiple bare chip remain identical Spacing.Supporting substrate 121 can be such as the substrates such as glass, pottery, sapphire, GaN, Si.

With reference to (b) of Figure 20, the plurality of bare chip 150 forms the first supplemantary electrode 43 respectively With the second supplemantary electrode 44.Each first supplemantary electrode 43 and the second supplemantary electrode 44 such as can utilize Chemical gas phase growth methods, sputtering, plating or soldered ball etc. are formed.Each the first supplemantary electrode 43 He described Second supplemantary electrode 44 can be had the material of electric conductivity by Au, Ag, Cu, W, Ni, Al etc. and be formed. Accordingly, multiple first supplemantary electrodes 43 and the second electrode 44 as shown in Figure 1 can be formed at multiple naked On chip 150.

With reference to (c) of Figure 20, described support substrate 121 is formed cover the plurality of bare chip 150, Multiple first supplemantary electrode 43 and wavelength conversion layers 50 of the second supplemantary electrode 44.Wavelength conversion layer 50 Fluorophor can be comprised, and in order to control refractive index, it may include TiO2、SiO2、Y2O3In powder.Described Wavelength conversion layer 50 is formed as sufficiently thick, to cover multiple first supplemantary electrode 43 and the second supplemantary electrode 44.It is multiple that wavelength conversion layer 50 can pass through injection moulding, Transfer molding, compression forming, printing etc. Coating process is formed.

With reference to (d) of Figure 20, after forming wavelength conversion layer 50, remove and support substrate 121.In order to It is readily removable support substrate 121, supporting, on substrate 121, stripping film (not shown) can be set. This stripping film can be such as the thin film being stripped according to light such as heat or ultraviolet.Accordingly, by This stripping film applies the light of heat or irradiation ultraviolet radiation etc. such that it is able to be readily removable support substrate 121。

Removing after supporting substrate 121, the plurality of bare chip 150 is according to wavelength conversion layer 50 mutually quilt Fix, and the plurality of bare chip 150 can be pasted on special supporter.

With reference to (e) of Figure 20, the top of described wavelength conversion layer 50 is removed and exposes multiple first attached Add electrode 43 and the second supplemantary electrode 44.The top of described wavelength conversion layer 50 can be by grinding, cutting Cut or utilize the physical method of laser to remove, or the chemical methodes such as etching can be used to remove.And then, The top of wavelength conversion layer 50 can be removed into and make described first supplemantary electrode 43 and the second supplemantary electrode 44 and the upper surface of wavelength conversion layer 50 form identical face.

With reference to (f) of Figure 20, fill the sky between multiple bare chip 150 by separating (sawing) Between wavelength conversion layer 50, thus complete single light-emitting diode chip for backlight unit 101 as shown in Figure 1.Institute State wavelength conversion layer 50 to may utilize blade or laser and separated.The plurality of single light-emitting diodes tube core Sheet 101 has makes the first supplemantary electrode 43 and the second supplemantary electrode 44 expose, and covers the side of substrate 21 The wavelength conversion layer 50 of the upper surface of face and semiconductor stacked structure body.

In the present embodiment, it is formed at support substrate 121 with the first supplemantary electrode 43 and the second supplemantary electrode 44 It is illustrated as a example by, but is not limited thereto, the first supplemantary electrode 43 and the second supplemantary electrode 44 can be formed on bare chip before arrangement bare chip on substrate 121 supporting.

Furthermore, it is possible to before forming the first supplemantary electrode 43 and the second supplemantary electrode 44, be arranged in Support and be initially formed separate layer (the 61 of Fig. 5) on the bare chip 150 on substrate 121, and can also be in shape Stress relaxation layer (the 62 of Fig. 6) is formed before becoming separate layer.Then, can be by described separate layer pattern Change and expose the first electrode 41 and the second electrode 42, and divide on the first electrode 41 and the second electrode 42 Do not form the first supplemantary electrode 43 and the second supplemantary electrode 44.

And, in the present embodiment, support substrate to remove before removing the top of wavelength conversion layer 50 Be illustrated as a example by 121, but support substrate can remove wavelength conversion layer 50 top after, or Person removes after utilizing blade or separation by laser wavelength conversion layer 50.

It addition, described bare chip 150 can include the separate layer 33 as illustrating, bottom with reference to Fig. 2 Distributed Bragg reflector 45 and metal level 47, and the top as illustrating can be included with reference to Fig. 3 Distributed Bragg reflector 37 and stress relaxation layer 35.And, described bare chip 150 can include as The single semiconductor stacked structure body 30 of Fig. 1, but be not limited thereto, as with reference to Figure 16 to Figure 18 As explanation, bare chip 150 can include multiple semiconductor stacked structure body 30, and can include absolutely Edge layer the 81, second insulating barrier 85, stress relaxation layer 87 and distributed Bragg reflector 89.Accordingly, may be used To produce the light-emitting diode chip for backlight unit 116 to 118 of Figure 16 to Figure 18.

In the present embodiment, light-emitting diodes is manufactured for forming wavelength conversion layer 50 on bare chip 150 The method of die is illustrated, but the method that present invention additionally comprises to be formed wavelength conversion layer 50 is similar to Method formed on bare chip 150 for changing the multiple clear coat of optical characteristics, be not limited to Wavelength conversion layer 50 is formed on bare chip 150.This clear coat could be included for improving optical characteristics Multiple material, such as can include diffusion material.

Hereinafter, with reference to Figure 21 to Figure 22, the Light-Emitting Diode that further embodiment of this invention provides is described.

Figure 21 is the upper plane figure for Light-Emitting Diode that further embodiment of this invention provides is described, schemes 22 for illustrating the figure of the section of the Light-Emitting Diode of C-C ' along the line viewing Figure 21.

With reference to Figure 21 and Figure 22, the Light-Emitting Diode that the present embodiment provides can include sub-base substrate 1000, Bare chip 200, adhering part 300, it is formed at first electrode 210 and on described bare chip 200 top Two electrode the 220, first supplemantary electrodes 410 and the second supplemantary electrode 420 and wavelength conversion layer 500.

Here, described sub-base substrate 1000 is used for mounting and move bare chip 200, it is different from described later For growing the growth substrate of the semiconductor stacked structure body of bare chip 200, and electrode or not can be formed Form electrode, although do not limit, but can be tellite, lead frame or ceramic substrate, And by above and below and connect above and below side and formed.And, on sub-base substrate 100 Surrounding along the region placing bare chip 200 can form the first slit 1110 and the second slit 1120.

Considering that described bare chip 200 will be mounted on the position on sub-base substrate 1000 and bare chip In the case of the size of 200, the first slit 1110 and the second slit 1120 attachment bare chip 200 it Before be previously formed on sub-base substrate 1000, and the first slit 1110 and the second slit 1120 and naked core Interval between sheet 200 keeps certain, by forming described slit 1110,1120, such as by bare chip 200 when mounting as will be described later in the way of metal bonding, according to described slit 1110,1120, molten The movement of the metal melted is limited, its result, and bare chip 200 will not form the arrangement of bigger mistake, Correct position can be arranged in.

And, the first slit 1110 and the second slit 1120 are not limited thereto, such as, can be formed as The opening shape of through sub-base substrate 1000, or according to embodiment, such as, can use with etching mode The shape of the recess patterns formed.

When first slit 1110 and the second slit 1120 are fabricated to opening shape, such as the region A of Figure 22 As shown in, the peristome of through first slit 1110 of wavelength conversion layer 500 and be not only formed at son The upper surface of base substrate 1000, is also formed into inner side, thus can be according to described wavelength conversion layer 500 stator base substrates 1000 and bare chip 200.

And, the opening shape of described first slit 1110 and the second slit 1120 can be identical or different, The form being similar to rectangle that corner as depicted can be used to be circular arc, but be not limited thereto, The shape of the side extension along bare chip 200 can be used.But, Figure 21 is by the second slit 1120 It is formed at the situation of the position overlapping with line of cut 1140 (with reference to Figure 24), it is shown that with independent chip be Unit carries out the sub-base substrate 1000 under the state cut off, therefore the second slit 1120 and the first slit 1110 is different, illustrate only the structure of half.Accordingly, when the position of line of cut 1140 is adjusted, Second slit 1120 is formed as similar with the first slit 1110.Described joint elements 300 play in institute State the effect of the above stickup bare chip 200 of sub-base substrate 1000, although be not defined, but example As described in bare chip 200 there is horizontal type structure time, the semiconductor layer of bare chip 200 can be by described Joint elements 300, make to be formed at lower surface and the son of the growth substrate (not shown) on semiconductor layer top The upper surface of base substrate 1000 is bonding.Described joint elements 300 such as may utilize silica gel, metal paste, Epoxy resin slurries etc. make.But, the present invention is not limited to the kind of specific joint elements, naked Chip 200 can also be mounted on sub-base substrate 1000 by utilizing the metal bonding of the metal of AuSn such as On.

In order to simplify, described bare chip 200 is omitted in the example shown, but can be to possess the first conduction The gallium nitride semiconductor stacked structure body of type semiconductor layer, active layer and the second conductive-type semiconductor layer LED chip.Specifically, described semiconductor stacked structure body such as can include by GaN film shape The n-layer and the p-type layer that become and get involved between n-layer and p-type layer, formed by InGaN film Active layer.This semiconductor stacked structure body generally grows at growth substrate (not shown), described growth Substrate can use sapphire (Al2O3) substrate, carborundum (SiC) substrate, silicon (Si) substrate, lead oxide (ZnO) Substrate, GaAs (GaAs) substrate or gallium phosphide (GaP) substrate etc. are formed.But, when described bare chip 200 During for vertical type structure, described growth substrate such as can pass through laser lift-off technique (LLO) and described half Conductor laminate structure separates.

The invention is not limited in the specific bare chip structures such as horizontal type structure or vertical type structure, but below Explanation based on horizontal type bare chip, and the structure of bare chip 200 and common gallium nitride luminous two The structure of level pipe is identical, therefore omits detailed description.

Described first electrode 210 and the second electrode 220 respectively with the first and second of described bare chip 200 Conductive-type semiconductor layer (not shown) electrically connects, and such as can include Ti, Cu, Ni, Al, Au or Cr, it is also possible to formed by plural material therein.And, described first electrode 210 and second Electrode 220 is formed as the thickness of about 10~200 μm.But, in fig. 22, it is shown that the first electrode 210 Two are formed respectively with the second electrode 220, but the first electrode 210 and quantity of formation of the second electrode 220 Or forming position is not limited to the situation of particular embodiment illustrated.That is, according to the kind of bare chip 200 Class, in the case of bare chip 200 uses horizontal type structure, the first electrode 210 and the second electrode 220 It is formed in above bare chip 200, in the case of bare chip 200 uses vertical type structure, first Some electrode in electrode 210 and the second electrode 220 can be omitted.And, the first electrode 210 When all being formed with the second electrode 220, can be different from diagram, the first electrode 210 and the second electrode are permissible Face each other on bare chip 200 and the most only form one.That is, along with bare chip 200 itself Tend to large area, as it can be seen, the first electrode 210 and the second electrode 220 can form two respectively, But in normal circumstances, the first electrode 210 and the second electrode 220 only form one, and these The position of one electrode 210 and the second electrode 220 can become not according to horizontal type structure or vertical type structure With.But, the following description is based on the structure of Figure 22.

Described first supplemantary electrode 410 and the second supplemantary electrode 420 are respectively at the first electrode 210 and second Form the thickness of more than about 100 μm on electrode 220, and such as can utilize Au, Cu, Ag, Al etc. Conductive metal material is formed.Moreover, it is also possible to by utilizing chemical gas phase growth methods, electron beam (e-beam) manufacture method of, sputtering, plating or soldered ball etc. is formed, according to embodiment, it is also possible in coating After sensitive material, being exposed and develop and manufacture, therefore the present invention is not formed by specific electrode The restriction of method.

And, described first supplemantary electrode 410 can be respectively provided with the second supplemantary electrode 420 and compare first Electrode 210 and the narrower width of the second electrode 220.That is, the first supplemantary electrode 410 and the second additional electrical Pole 420 is defined to the first electrode 210 and top of the second electrode 220 respectively.And, first adds Electrode 410 and the second supplemantary electrode 420 can have further away from the first electrode 210 and the second electrode 220 Contact surface, the shape that width more narrows.According to this shape, the first supplemantary electrode 410 and second Supplemantary electrode 420 can stably be pasted onto respectively and keep on the first electrode 210 and the second electrode 220, Be conducive to the subsequent techniques such as wire bonding.Furthermore, it is possible to by the first supplemantary electrode 410 and the second additional electrical The rate control of the height relative to bottom surface of pole 420 is within preset range, so that the first supplemantary electrode 410 and second supplemantary electrode 420 can be stably maintained at the first electrode 210 and the second electrode 220 it On.

Described wavelength conversion layer 500 is to comprise fluorophor in epoxy resin or silica gel and formed, or only Formed by fluorophor, play the light generated by the active layer (not shown) at bare chip 200 as exciting Source and convert the effect of injection after wavelength.

Here, the kind for described fluorophor has no particular limits, known wavelength conversion material Can use, although do not limit, but can be such as by (Ba, Sr, Ca)2SiO4:Eu2+、 YAG((Y、Gd)3(Al、Ga)5O12:Ce3+) line fluorescent body, TAG ((Tb, Gd)3(Al, Ga)5O12:Ce3+) Line fluorescent body, (Ba, Sr, Ca)3SiO5:Eu2+、(Ba、Sr、Ca)MgSi2O6:Eu2+、Mn2+、(Ba、 Sr、Ca)3MgSi2O8:Eu2+、Mn2+And (Ba, Sr, Ca) MgSiO4:Eu2+、Mn2+The group constituted More than one fluorophor of middle selection.

And, with reference to one embodiment of the invention, wavelength conversion layer 500 is possible not only at bare chip 200 Top (region represented in dash-dot line in Figure 21), it is also possible to formed with uniform thickness in side. Now, as be described hereinafter, available mould is except the first supplemantary electrode 410 and the second supplemantary electrode 420 Form, on the region in (whole or local) region, the wavelength conversion layer 500 that upper surface is smooth above, and By the first supplemantary electrode 410 and the second supplemantary electrode 420 are run through wavelength conversion layer 500 and are exposed to Outside, thus when packaging operation, can easily carry out wire bonding, even if forming ripple in chip-scale Long transform layer 500, exposes the additional technique of electrode without for carrying out wire bonding.

And then, wavelength conversion layer 500 such as can have the refractive index within the scope of 1.4~2.0, in order to adjust Refractive index, TiO2、SiO2、Y2O3Within can be incorporated into wavelength conversion layer 500 in powder.

It addition, as it can be seen, the upper surface of the first supplemantary electrode 410 may be located at and the second supplemantary electrode The height that the upper surface of 420 is identical.Accordingly, in the situation that bare chip 200 is horizontal type Light-Emitting Diode Under, remove the second conductive-type semiconductor layer and a part for active layer and expose the first conductive-type semiconductor layer Time, the first supplemantary electrode 410 comparability electrically connected with the first conductive-type semiconductor and the second conductivity type half Second supplemantary electrode 420 of conductor layer electrical connection is longer.

According to the present embodiment, owing to wavelength conversion layer 500 not only covers above bare chip 200, also cover The side of lid bare chip 200, therefore provides not only for by the above release of semiconductor stacked structure body Light, additionally it is possible to sending out of wavelength conversion is carried out for the light of the side release by semiconductor stacked structure body Light diode.

Figure 23 is the sub-base substrate illustrating and being formed with multiple Light-Emitting Diode according to one embodiment of the invention Figure, Figure 24 is to amplify in Figure 23 with the figure justifying the region represented.

According to one embodiment of the invention, can mount with matrix structure on a sub-base substrate 1000 After multiple bare chips 200, utilize mould to concurrently form wavelength on these multiple bare chips 200 and become Change layer 500, and these are cut in units of single chip.And, now, when second is narrow When seam 1120 is formed at the position overlapping with line of cut 1140, this cutting work can be performed more easily Skill.

It addition, on the most sub-base substrate 1000, except aforesaid first slit 1110 and second outside slit 1120, it is also possible to be formed with chip separation slit 1130.That is, along Line of cut 1140 is time transversely (X-direction) cuts off sub-base substrate 1000, by sub-base substrate The chip separation slit 1130 that on 1000, the most vertically (Y-direction) is formed, luminous two Level pipe can be separated in units of single chip.

Accordingly, according to the present invention, after multiple bare chips being mounted on a substrate, by same work Skill forms wavelength conversion layer on the top of all bare chips, and cuts off in units of independent chip, from And multiple light-emitting component can be manufactured simultaneously, therefore, it is possible to shorten manufacturing time, logical undergone mass production can Realize the saving of manufacturing cost.

Hereinafter, with reference to Figure 25 and Figure 26 illustrate one embodiment of the invention provide Light-Emitting Diode and Manufacture method including this packaging part.

Figure 25 is the flow process of the manufacture method for Light-Emitting Diode that one embodiment of the invention provides is described Figure, Figure 26 for being shown respectively the manufacturing process of the Light-Emitting Diode that one embodiment of the invention provides according to step Figure.But, each step of Figure 25 can perform simultaneously or asynchronously, it is also possible to according to different feelings Condition order change, specific step can also be omitted.Accordingly, the invention is not limited in the suitable of diagram Sequence.

First, such as (a) of Figure 26, sub-base substrate 1000 (step S1) is prepared.As it was previously stated, Along will put can around the region of bare chip 200 on sub-base substrate 1000 (with reference to Figure 24) It is formed with multiple first slit 1110 and the second slit 1120, and is pre-formed with chip separation slit 1130, thus cutting technique later cuts off only along an X sub-base substrate 1000 also be able to Individually chip is unit separation Light-Emitting Diode.

Afterwards, such as (b) of Figure 26, can paste with matrix shape on the sub-base substrate 1000 prepared Fill multiple bare chip 200 (step S2).Glued here, bare chip 200 may utilize joint elements 300 It is affixed on above sub-base substrate 1000, it is also possible to by such as utilizing the metal bonding methods of AuSn etc. It is stuck.And, when mounting bare chip 200, due to the first slit 1110 and the second slit 1120, Bare chip 200 will not be arranged mistakenly and can be arranged in desired position.Now, bare chip 200 Above being formed be electrically connected in the first conductive-type semiconductor layer (not shown) and the second conductivity type First electrode 210 and the second electrode 220 of semiconductor layer (not shown).

Afterwards, as shown in (c) of Figure 26, upper at described first electrode 210 and the second electrode 220 Portion forms the first supplemantary electrode 410 and the second supplemantary electrode 420 (step S3) respectively.First additional electrical Pole 410 and the second supplemantary electrode 420 such as can utilize the conductive metal materials such as Au, Cu, Ag, Al Material is formed, and can be by utilizing chemical gas phase growth methods, electron beam (e-beam), sputtering, plating or weldering The manufacture method of ball etc. is formed, according to embodiment, it is also possible to after coating sensitive material, be exposed Manufacture with development.

Afterwards, on bare chip 200, wavelength conversion layer 500 (step S4) is formed with side.Root According to one embodiment of the invention, such as (d) of Figure 26, utilize mould 650 to clamp and be pasted with bare chip 200 Sub-base substrate 1000, upper for described first supplemantary electrode 410 and the second supplemantary electrode 420 While face applies pressure, the one side of mould 650 and the above of supplemantary electrode 410,420 is made mutually to be adjacent to And avoid under the state producing space, inject to mould inside space 600 fluorophor and resin compound it After, wavelength conversion layer 500 ((e) of Figure 26) can be formed by making described hardening of resin.Now, The power applied to supplemantary electrode 410,420 due to mould 650, the shape of supplemantary electrode 410,420 becomes Shape, even if the height of supplemantary electrode 410,420 is formed as slightly different situation accordingly, it is also possible to pass through Mould makes highly to become identical, and also will not produce gap between mould and supplemantary electrode 410,420.

And, in order to make mould 650 more efficiently supplemantary electrode be pressurizeed, according to embodiment, mould The height of frame is possible not only to be adjusted to and the whole height of the bare chip 200 possessing supplemantary electrode 410,420 Identical, it is also possible to be adjusted to the whole height less than the bare chip 200 possessing supplemantary electrode 410,420. And, in (e) of Figure 26, only illustrate using single bare chip 200 as benchmark, but shape in reality When becoming wavelength conversion layer 500, whole for multiple bare chips 200 with matrix arrangement in Figure 23 and Figure 24 Body, it is possible to use single mould concurrently forms wavelength conversion layer on these multiple bare chips 200 500。

Afterwards, the sub-base substrate 1000 forming wavelength conversion layer 500 is cut off along line of cut 1140, Multiple Light-Emitting Diode (step S5) is separated in units of independent chip.Now, as it was previously stated, at core Region between sheet and chip along Y direction longer be extended with the opening of chip separation slit 1130, Therefore cut off operation can only implement along one direction of X-axis such that it is able to simplify cutting technique, shorten work The skill time.

Afterwards, as shown in figure 27, single light emitting diode is mounted on base plate for packaging 1500, so After on the first supplemantary electrode 410 and the second supplemantary electrode 420, be electrically connected bonding wire 800, with Power supply can be applied to Light-Emitting Diode, and form the lens 700 encapsulating described Light-Emitting Diode, with energy Enough from Light-Emitting Diode described in outer protection (step S6).

That is, Figure 27 is for for illustrating the light-emitting diode carrying Light-Emitting Diode that one embodiment of the invention provides The sectional view of pipe packaging part.With reference to Figure 27, Light-Emitting Diode packaging part can include that stickup is equipped with bare chip The base plate for packaging 1500 of the sub-base substrate 1000 of 200 and be formed on described bare chip 200 One supplemantary electrode 410 and the second supplemantary electrode 420 electrical connection bonding wire 800, encapsulate described naked core The lens 700 of sheet 200.

Described base plate for packaging 1500 is different from sub-base substrate 1000, is in order to bare chip 200 The substrate supplying power supply and be equipped with, although do not limit, but can be such as tellite, lead-in wire Framework, ceramic substrate etc., it may include multiple power supplys are for application lead terminal (not shown).Accordingly, naked First supplemantary electrode 410 of chip 200 and the second supplemantary electrode 420 can pass through bonding wire 800 respectively It is electrically connected to described lead terminal.

It addition, lens 700 are formed as will be formed with the described sub-base substrate of described wavelength conversion layer 500 1000 encapsulatings are integrated, i.e. be formed as covering whole bare chip 200, such that it is able to adjust from bare chip The sensing angle of the light of 200 releases makes light discharge towards desired direction.According to the present embodiment, due to naked core Being formed with wavelength conversion layer 500 on sheet 200, the most described lens 700 are without comprising fluorophor, but root According to situation, it is also possible to comprise the fluorophor different from the fluorophor that wavelength conversion layer 500 is comprised.

Accordingly, according to one embodiment of the invention, along with utilizing the bare chip being mounted on sub-base substrate 1000 200 encapsulating light emitting diodes, it is possible to be more freely packaged part appearance design, packaging operation becomes Simply, it is possible to increase working performance.

Hereinafter, with reference to Figure 28, the Light-Emitting Diode provided for another embodiment of the present invention illustrates.

Different from previous embodiment, such as, the Light-Emitting Diode of Figure 22 is wavelength conversion layer 500 and naked core The structure that the semiconductor stacked structure body of sheet 200 connects, but in the Light-Emitting Diode shown in Figure 28, permissible Be formed as getting involved transparent resin 550 between wavelength conversion layer 500 and semiconductor stacked structure body, so that Wavelength conversion layer 500 separates from semiconductor stacked structure body.

So, along with wavelength conversion layer 500 separates from semiconductor stacked structure body, it is possible to prevent wavelength to become The resin or the fluorophor that change layer 500 deteriorate because of the middle light generated of active layer (not shown).And, Now, described transparent resin 550 can also get involved the first slit formed on sub-base substrate 1000 Between medial surface and the wavelength conversion layer 500 of 1110 (the region B of Figure 28).

Here, in order to reduce the heat being transferred to fluorophor, the thermal conductivity of described transparent resin 550 the lowest more Favorably, 3W/mK can be such as less than.And, in order to adjust the refractive index of transparent resin 550, TiO2、 SiO2、Y2O3Can be incorporated in transparent resin in powder.

Or, although not diagram, in order to make hardness be higher than the high-hard, transparent of described transparent resin 550 Resin (not shown) covers wavelength conversion layer 500, all right on the top of described wavelength conversion layer 500 Form highly hard transparent resins further.Now, described highly hard transparent resins can protect fluorophor to exempt from Being affected by outside moisture, in order to prevent absorbing dampness, described highly hard transparent resins is preferably such as Shao Family name's hardness number reaches more than 60A.And then, in order to adjust the refractive index of described highly hard transparent resins, TiO2、 SiO2、Y2O3Within can be incorporated into resin in powder.

Light-emitting diode chip for backlight unit and manufacture method thereof that present invention mentioned above provides and include its envelope Piece installing and manufacture method thereof are not limited to embodiment described above, are applicable as comprising wavelength conversion thing The light-emitting component with various structures of matter.

The present invention can be without departing from real after modifying within the scope of the purport of the present invention and deforming Executing, the scope of the present invention defines according to claims rather than the circle according to above-mentioned detailed description All of change or deformed that is fixed, that derive from the meaning of claims and scope and its equivalents Form all should be interpreted that and be contained in the scope of the present invention.

Claims (35)

1. a light-emitting diode chip for backlight unit, including:
Substrate;
Semiconductor stacked structure body, this semiconductor stacked structure body is be positioned on described substrate gallium nitride Compound semiconductor lamination structure, including the first conductive-type semiconductor layer, active layer and the second conductivity type Semiconductor layer;
Electrode, is electrically connected to described semiconductor stacked structure body;
Supplemantary electrode, is formed on described electrode;
Wavelength conversion layer, for realizing white light and covering the top of described semiconductor stacked structure body;
Separate layer, gets involved the chien shih in described wavelength conversion layer and described semiconductor stacked structure body in activity Light transmission that layer generates also reflects from external incident or the light that converted by wavelength conversion layer,
Wherein, described supplemantary electrode runs through described wavelength conversion layer.
Light-emitting diode chip for backlight unit the most according to claim 1, wherein, described separate layer is by insulating barrier Formed.
Light-emitting diode chip for backlight unit the most according to claim 1, wherein, described separate layer includes distribution Bragg reflector.
Light-emitting diode chip for backlight unit the most according to claim 3, wherein, described separate layer also includes being situated between Enter the stress relaxation layer between described distributed Bragg reflector and described semiconductor stacked structure body.
Light-emitting diode chip for backlight unit the most according to claim 4, wherein, described stress relaxation layer is by revolving Painting formula glassy layer or porous silicon oxide film are formed.
Light-emitting diode chip for backlight unit the most according to claim 1, wherein, described supplemantary electrode has phase The width more narrower than described electrode.
Light-emitting diode chip for backlight unit the most according to claim 6, wherein, described supplemantary electrode is from described Electrode is the most remote, and width becomes the narrowest.
Light-emitting diode chip for backlight unit the most according to claim 1, wherein, is electrically connected to described quasiconductor The electrode of laminate structure includes:
First electrode, is electrically connected to described first conductive-type semiconductor layer;
Second electrode, is electrically connected to described second conductive-type semiconductor layer,
Described supplemantary electrode includes:
First supplemantary electrode, is formed on described first electrode;
Second supplemantary electrode, is formed on described second electrode.
Light-emitting diode chip for backlight unit the most according to claim 1, wherein, the top of described supplemantary electrode Face is consistent with the upper side of described wavelength conversion layer.
Light-emitting diode chip for backlight unit the most according to claim 1, wherein, is electrically connected to described partly lead The electrode of body laminate structure is electrically connected to described first conductive-type semiconductor layer.
11. 1 kinds of light-emitting diode chip for backlight unit, including:
Substrate;
Multiple semiconductor stacked structure bodies, are positioned on described substrate, include the first conductive-type semiconductor respectively Layer, active layer and the second conductive-type semiconductor layer;
First electrode, is electrically connected to a semiconductor stacked structure body;
Second electrode, is electrically connected to second half conductor laminate structure;
First supplemantary electrode, is formed on described first electrode;
Second supplemantary electrode, is formed on described second electrode;
Wavelength conversion layer, for realizing white light and covering the top of the plurality of semiconductor stacked structure body,
Separate layer, gets involved the chien shih in described wavelength conversion layer and the plurality of semiconductor stacked structure body and exists Light transmission that active layer generates also reflects from external incident or the light that converted by wavelength conversion layer,
Wherein, described first supplemantary electrode and described second supplemantary electrode run through described wavelength conversion layer.
12. light-emitting diode chip for backlight unit according to claim 11, wherein, also include being electrically connected to each other The distribution of the plurality of semiconductor stacked structure body.
13. light-emitting diode chip for backlight unit according to claim 11, wherein, described separate layer is by insulating Layer is formed.
14. light-emitting diode chip for backlight unit according to claim 11, wherein, described separate layer is further Including the distribution bragg got involved between described wavelength conversion layer and the plurality of semiconductor stacked structure body Reflector.
15. light-emitting diode chip for backlight unit according to claim 14, wherein, also include getting involved in described Stress relaxation layer between distributed Bragg reflector and the plurality of semiconductor stacked structure body.
16. light-emitting diode chip for backlight unit according to claim 11, wherein, described first supplemantary electrode With the second supplemantary electrode, there is width more narrower than described first electrode and the second electrode respectively.
17. light-emitting diode chip for backlight unit according to claim 16, wherein, described first supplemantary electrode With the second supplemantary electrode respectively from described first electrode and the second electrode more away from, width becomes the narrowest.
18. light-emitting diode chip for backlight unit according to claim 11, wherein, described first electrode is electrically connected Being connected to the first conductive-type semiconductor layer of one semiconductor stacked structure body, described second electrode is electrically connected It is connected to the second conductive-type semiconductor layer of another semiconductor stacked structure body described.
19. 1 kinds of Light-Emitting Diode packaging parts, including lead terminal, light-emitting diode chip for backlight unit and connection Described lead terminal and the bonding wire of described light-emitting diode chip for backlight unit, wherein, described light-emitting diodes tube core Sheet includes:
Substrate;
Semiconductor stacked structure body, this semiconductor stacked structure body is the above nitridation being positioned at described substrate Gallium based compound semiconductor stepped construction, leads including the first conductive-type semiconductor layer, active layer and second Electricity type semiconductor layer;
Electrode, is electrically connected to described semiconductor stacked structure body;
Supplemantary electrode, is formed on described electrode;
Wavelength conversion layer, for realizing white light and covering the top of described semiconductor stacked structure body;
Separate layer, gets involved the chien shih in described wavelength conversion layer and described semiconductor stacked structure body in activity Light transmission that layer generates also reflects from external incident or the light that converted by wavelength conversion layer,
Wherein, described supplemantary electrode runs through described wavelength conversion layer,
Described bonding wire connects described supplemantary electrode and described lead terminal.
20. 1 kinds of Light-Emitting Diode packaging parts, including:
Sub-base substrate;
Possess the first conductive-type semiconductor layer, active layer, the second conductive-type semiconductor layer and separate layer, and Possess and be electrically connected to the first electrode of described first conductive-type semiconductor layer and be electrically connected to described second conduction Second electrode of type semiconductor layer, at least one in being arranged above with described first electrode and the second electrode , the bare chip being mounted on described sub-base substrate;
Expose and be formed at described first electrode above described bare chip and at least one in the second electrode, And the above of described bare chip and side are covered as one, and at least cover the upper of described sub-base substrate The wavelength conversion layer of the part in face,
Wherein, described wavelength conversion layer is used for realizing white light, and separate layer makes in active layer generation Light transmission also reflects from external incident or the light that converted by wavelength conversion layer.
21. Light-Emitting Diode packaging parts according to claim 20, wherein, described sub-base substrate The multiple slits formed including the side along described bare chip.
22. Light-Emitting Diode packaging parts according to claim 21, wherein, the plurality of slit is every One has opening shape.
23. Light-Emitting Diode packaging parts according to claim 22, wherein, described wavelength conversion layer By at least some of inner side covering described sub-base substrate in the plurality of slit.
24. Light-Emitting Diode packaging parts according to claim 20, wherein, described sub-base substrate Metal bonding is carried out with described bare chip.
25. Light-Emitting Diode packaging parts according to claim 20, wherein, also include:
It is formed with the power supply substrate for application lead-in wire;
Electrically connect described power supply to draw with described first electrode and described being bonded of second electrode for application lead-in wire Line;
Encapsulate the lens of described bare chip.
The manufacture method of 26. 1 kinds of Light-Emitting Diode packaging parts, comprises the steps:
Prepare sub-base substrate;
The first conductive-type semiconductor layer, active layer, the second conductive-type semiconductor layer and separation will be included respectively Multiple bare chips of layer are mounted on described sub-base substrate;
Form the first electrode being electrically connected to described first conductive-type semiconductor layer, and formation is electrically connected to institute State the second electrode of the second conductive-type semiconductor layer;
Formed to expose and be formed in above described first electrode of described bare chip and the second electrode at least One, the above of described bare chip and side are covered as one, and at least cover described sub-base substrate An above part and for realizing the wavelength conversion layer of white light,
Wherein, described separate layer make active layer generate light transmission and reflect from external incident or by wavelength The light of transform layer conversion.
The manufacture method of 27. Light-Emitting Diode packaging parts according to claim 26, wherein, is formed The step of described first electrode and the second electrode includes step: by described first electrode and the second electrode At least one is formed at above described bare chip.
The manufacture method of 28. Light-Emitting Diode packaging parts according to claim 26, wherein, described The manufacture method of Light-Emitting Diode packaging part farther includes step: utilize mould to described first electrode and Second electrode pressurization, to avoid producing between described mould and described first electrode and the second electrode gap.
The manufacture method of 29. Light-Emitting Diode packaging parts according to claim 28, wherein, is formed The step of described wavelength conversion layer includes step: inject containing fluorophor in the inner space of described mould Resin and solidify.
The manufacture method of 30. Light-Emitting Diode packaging parts according to claim 26, wherein, prepares The step of described sub-base substrate includes step: form multiple slit along the region mounting described bare chip.
The manufacture method of 31. Light-Emitting Diode packaging parts according to claim 30, wherein, described Multiple slits form opening shape respectively.
The manufacture method of 32. Light-Emitting Diode packaging parts according to claim 31, wherein, is formed The step of described wavelength conversion layer includes step: be formed through by described wavelength conversion layer the plurality of narrow A part of slit in seam covers the inner side of described sub-base substrate.
The manufacture method of 33. Light-Emitting Diode packaging parts according to claim 26, wherein, described The manufacture method of light emission diode package member includes further comprising the steps of: at described wavelength conversion layer and described naked Transparent resin layer is formed between chip.
The manufacture method of 34. Light-Emitting Diode packaging parts according to claim 26, wherein, described The manufacture method of Light-Emitting Diode packaging part further comprises the steps of: described sub-base substrate with the most luminous Diode chip is that unit is cut.
The manufacture method of 35. Light-Emitting Diode packaging parts according to claim 34, wherein, described The manufacture method of Light-Emitting Diode packaging part further comprises the steps of:
The substrate have lead-in wire mounts cut described single bare chip;
Described first electrode and the second electrode are electrically connected with bonding wire respectively;
Form the lens encapsulating described single light-emitting diode chip for backlight unit.
CN201080068136.6A 2010-05-18 2010-12-03 There is light emitting diode chip and the manufacture method thereof of wavelength conversion layer, and include its packaging part and manufacture method thereof CN103003966B (en)

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KR10-2010-0046423 2010-05-18
KR20100046423 2010-05-18
KR1020100090352A KR101719642B1 (en) 2010-09-15 2010-09-15 Light-emitting diode package and method of manufacturing the same
KR10-2010-0090352 2010-09-15
KR10-2010-0096682 2010-10-05
KR20100096682 2010-10-05
KR10-2010-0110149 2010-11-08
KR1020100110149A KR101230619B1 (en) 2010-05-18 2010-11-08 Light emitting diode chip having wavelength converting layer, method of fabricating the same and package having the same
PCT/KR2010/008647 WO2011145794A1 (en) 2010-05-18 2010-12-03 Light emitting diode chip having wavelength conversion layer and manufacturing method thereof, and package including same and manufacturing method thereof

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Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120092000A (en) * 2011-02-09 2012-08-20 서울반도체 주식회사 Light emitting device having wavelength converting layer
CN106169467A (en) * 2013-05-22 2016-11-30 晶元光电股份有限公司 Light-emitting device
US9166116B2 (en) 2012-05-29 2015-10-20 Formosa Epitaxy Incorporation Light emitting device
JP5980577B2 (en) 2012-05-31 2016-08-31 シチズン電子株式会社 Side-illuminated LED light-emitting device and method for manufacturing side-illuminated LED light-emitting device
TWI565043B (en) * 2012-06-19 2017-01-01 晶元光電股份有限公司 An illumination device
KR20140057968A (en) * 2012-11-05 2014-05-14 엘지이노텍 주식회사 Light emitting device and light emitting array
JP6398222B2 (en) 2013-02-28 2018-10-03 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
EP3025380A1 (en) * 2013-07-22 2016-06-01 Koninklijke Philips N.V. Flip-chip side emitting led
JP6098439B2 (en) * 2013-08-28 2017-03-22 日亜化学工業株式会社 Wavelength conversion member, light emitting device, and method of manufacturing light emitting device
TWI580079B (en) * 2013-12-26 2017-04-21 新世紀光電股份有限公司 Light emitting diode package structure and light emitting diode module
TW201616689A (en) * 2014-06-25 2016-05-01 皇家飛利浦有限公司 Packaged wavelength converted light emitting device
TWI570961B (en) * 2014-09-19 2017-02-11 Wen-Bin Chen A light emitting diode (LED) wafer having a color purified structure
WO2016098853A1 (en) * 2014-12-19 2016-06-23 エルシード株式会社 Light-emitting element
KR20160084562A (en) 2015-01-05 2016-07-14 삼성전자주식회사 Semiconductor light emitting device package and method for manufacturing the same
KR20160141302A (en) 2015-05-29 2016-12-08 삼성전자주식회사 Semiconductor light emitting diode chip and light emitting device having the same
TWI583020B (en) * 2015-07-06 2017-05-11 隆達電子股份有限公司 Light emitting element and light emitting device
JP5980388B2 (en) * 2015-07-23 2016-08-31 キヤノン株式会社 Electromechanical converter
KR20170056105A (en) * 2015-11-12 2017-05-23 삼성전자주식회사 Semiconductor light emitting device package
KR20170099650A (en) * 2016-02-24 2017-09-01 삼성전자주식회사 Light emitting device package and method of manufacturing the same
JP2018019023A (en) 2016-07-29 2018-02-01 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same
US10243124B2 (en) 2016-12-26 2019-03-26 Nichia Corporation Light emitting device
US10319889B2 (en) 2016-12-27 2019-06-11 Nichia Corporation Light emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1945867A (en) * 2006-11-02 2007-04-11 浙江大学 ZnO base LED and its preparing method
CN101009351A (en) * 2006-01-24 2007-08-01 索尼株式会社 Semiconductor light emitting device and semiconductor light emitting device assembly
CN101015069A (en) * 2004-06-30 2007-08-08 首尔Opto仪器股份有限公司 Light emitting element with a plurality of cells bonded, method of manufacturing the same, and light emitting device using the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06186403A (en) * 1992-12-18 1994-07-08 Olympus Optical Co Ltd Multilayer film optical member
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
JPH11145519A (en) * 1997-09-02 1999-05-28 Toshiba Corp Semiconductor light-emitting element, semiconductor light-emitting device, and image-display device
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
JP4179736B2 (en) * 1999-07-16 2008-11-12 松下電器産業株式会社 Manufacturing method of semiconductor element mounted component and manufacturing method of semiconductor element mounted finished product
JP3589187B2 (en) * 2000-07-31 2004-11-17 日亜化学工業株式会社 Forming a light emitting device METHOD
JP4529319B2 (en) * 2001-06-27 2010-08-25 日亜化学工業株式会社 Semiconductor chip and manufacturing method thereof
JP2004095765A (en) * 2002-08-30 2004-03-25 Nichia Chem Ind Ltd Light emitting device and method for manufacturing the same
JP2006005336A (en) * 2004-05-18 2006-01-05 Showa Denko Kk Light-emitting diode and manufacturing method therefor
US7202504B2 (en) * 2004-05-20 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
JP2006186022A (en) * 2004-12-27 2006-07-13 Toyoda Gosei Co Ltd Light emitting device
KR100665178B1 (en) * 2005-05-26 2007-01-09 삼성전기주식회사 Method of fabracating light emitting diode package
DE102005062514A1 (en) * 2005-09-28 2007-03-29 Osram Opto Semiconductors Gmbh Multi-purpose light emitting diode incorporates selective wavelength trap
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP2008244425A (en) * 2007-02-21 2008-10-09 Mitsubishi Chemicals Corp GaN BASED LED ELEMENT AND LIGHT EMITTING DEVICE
JP5141077B2 (en) * 2007-04-03 2013-02-13 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP2009094332A (en) * 2007-10-10 2009-04-30 Fuji Xerox Co Ltd Surface-emitting semiconductor laser device, and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101015069A (en) * 2004-06-30 2007-08-08 首尔Opto仪器股份有限公司 Light emitting element with a plurality of cells bonded, method of manufacturing the same, and light emitting device using the same
CN101009351A (en) * 2006-01-24 2007-08-01 索尼株式会社 Semiconductor light emitting device and semiconductor light emitting device assembly
CN1945867A (en) * 2006-11-02 2007-04-11 浙江大学 ZnO base LED and its preparing method

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