CN106169467B - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
CN106169467B
CN106169467B CN201610836364.2A CN201610836364A CN106169467B CN 106169467 B CN106169467 B CN 106169467B CN 201610836364 A CN201610836364 A CN 201610836364A CN 106169467 B CN106169467 B CN 106169467B
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China
Prior art keywords
light
emitting diode
light emitting
emitting device
transparent substrate
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CN201610836364.2A
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CN106169467A (en
Inventor
潘锡明
郑惟纲
黄知澍
李承鸿
叶时有
蒲计志
杨程光
汤士杰
洪祥富
王子翔
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Epistar Corp
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Epistar Corp
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Priority to CN201610836364.2A priority Critical patent/CN106169467B/en
Priority claimed from CN201310191958.9A external-priority patent/CN103456869B/en
Publication of CN106169467A publication Critical patent/CN106169467A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present invention provides a light emitting device including: the LED chip comprises a transparent substrate, a first LED structure and a wavelength conversion layer, wherein the transparent substrate is provided with a growing surface and a side surface; the first light-emitting diode structure is arranged on the growth surface; a wavelength conversion layer covers the first light emitting diode structure but does not cover the side face; the bearing seat is connected with the light emitting diode chip, and an included angle which is not 90 degrees is formed between the bearing seat and the transparent substrate. The invention can improve the luminous efficiency and luminous effect, improve the light shape and save the cost.

Description

Light emitting device
Technical Field
The present invention relates to a light emitting device.
Background
Light emitted from a Light Emitting Diode (LED) is a light source biased to a directional property, and is not a divergent light source like a general bulb, so that the application of the LED is limited. For example, the application of the lighting device to indoor and outdoor illumination is not capable of achieving the required light pattern. In addition, the known light emitting diode chip can emit light only on a single side, and thus has low light emitting efficiency.
Disclosure of Invention
An objective of the present invention is to provide a light emitting device to improve light emitting efficiency and effect, improve light shape and save cost.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a light emitting device comprising:
a light emitting diode chip comprising:
a transparent substrate having an elongated surface and a side surface;
a first light emitting diode structure disposed on the growth surface, having a first side surface;
a second light emitting diode structure disposed on the growth surface, having a second side surface;
a conductive wire having two ends directly connected to the first and second LED structures, respectively, and having a portion covering the first and second side surfaces;
a wavelength conversion layer covering the first and second light emitting diode structures;
a support having a first surface connected with the transparent substrate, the first surface being parallel to the growth surface;
a bonding layer formed between the light emitting diode chip and the support; and
bear the seat, connect the support, bear the seat with form a contained angle of 90 degrees between.
As a further improvement of the present invention, the transparent substrate is a sapphire substrate.
As a further development of the invention, the wavelength conversion layer continuously covers the first light emitting diode structure and the second light emitting diode structure.
As a further development of the invention, the first light emitting diode structure and the second light emitting diode structure are connected in series.
As a further development of the invention, the wavelength conversion layer is in direct contact with the first light emitting diode structure.
As a further development of the invention, the transparent substrate further comprises a first portion not covered by the wavelength converting layer.
As a further improvement of the present invention, the light emitting diode chip further includes a connection electrode disposed on the first portion.
As a further improvement of the present invention, the transparent substrate further includes a main surface opposed to the growth surface, and the wavelength conversion layer covers the main surface.
As a further improvement of the present invention, at least a portion of the light emitted by the first led structure can enter the transparent substrate and exit the main surface.
As a further improvement of the present invention, the first light emitting diode structure includes a buffer layer, a first semiconductor layer, an active layer, and a second semiconductor layer, and the buffer layer is directly formed on the growth surface.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a light emitting device comprising:
the bearing seat is provided with a positive electrode and a negative electrode; and
the light emitting diode chip is embedded in the bearing seat and comprises:
the substrate is provided with a width, a length and an upper surface, and a first end and a second end which are oppositely arranged in the length direction;
a plurality of light emitting diode structures arranged on the upper surface along the length direction;
and
a metal trace on the upper surface in electrical connection with the plurality of light emitting diode structures, the metal trace having a first portion extending in the direction of the width and a second portion electrically connecting the positive electrode and the negative electrode, the first portion being at the first end and the second portion being at the second end,
wherein the second portion has a positive connection electrode connected to the positive electrode, and a negative connection electrode connected to the negative electrode.
As a further improvement of the present invention, the led chip further comprises a support for connecting the carrier and the led chip.
As a further improvement of the present invention, the carrier has a slot for fixing the substrate.
As a further improvement of the invention, the light emitting device further comprises a conductive contact at the second end, the conductive contact being electrically connected to the second portion.
As a further improvement of the invention, the LED structure further comprises a wavelength conversion layer covering the plurality of LED structures.
As a further improvement of the present invention, an included angle between the led chip and the carrying seat is between 30 degrees and 150 degrees.
As a further refinement of the invention, the plurality of light emitting diode structures are not located on the first portion.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a light emitting device comprising:
the bearing seat is provided with a positive electrode and a negative electrode;
the bracket is coupled with the bearing seat, and a slot is formed between the bracket and the bearing seat;
a light emitting diode chip embedded within the socket, the light emitting diode chip comprising:
a substrate having a width, a length, and an upper surface;
a plurality of light emitting diode structures arranged on the upper surface of the substrate along the length direction; and
a metal line electrically connected to the plurality of light emitting diode structures;
the bonding layer is positioned between the bracket and the light-emitting diode chip, and the bonding layer, the positive electrode and the negative electrode are positioned on the opposite sides of the substrate;
the lamp shell wraps the light-emitting diode chip; and
a base coupled with the lamp housing.
As a further improvement of the present invention, the substrate further includes a lower surface disposed opposite to the upper surface, and the lower surface is not provided with a light emitting diode chip.
As a further improvement of the present invention, the bonding layer is located on a side of the substrate opposite to the plurality of light emitting diode structures.
As a further development of the invention, the metal line has a second portion extending to one end of the substrate to form a conductive contact.
As a further improvement of the invention, the LED structure further comprises a wavelength conversion layer covering the plurality of LED structures.
As a further improvement of the present invention, an included angle between the led chip and the carrying seat is between 30 degrees and 150 degrees.
As a further improvement of the invention, the wavelength conversion layer does not cover the side surfaces of the substrate.
As a further improvement of the invention, the lamp housing wraps the bearing seat.
As a further improvement of the invention, the lamp housing is formed in a glue filling mode.
As a further improvement of the present invention, the lamp housing at least partially encloses and directly contacts the led chip.
The light emitting diode structure is arranged on the transparent substrate of the light emitting diode chip, and light emitted by the light emitting diode structure can penetrate through the transparent substrate. Therefore, the light emitting diode chip of the invention can emit light in at least multiple directions or all directions, improve the light emitting efficiency and solve the problem of poor light type of the traditional light emitting diode chip. In addition, the bearing seat and the transparent substrate form an included angle of not 90 degrees, so that the luminous effect can be improved.
Drawings
Fig. 1A and 1B are schematic structural diagrams of a light emitting diode chip according to a preferred embodiment of the invention.
Fig. 2A, fig. 2B and fig. 2C are schematic diagrams illustrating different types of led structures coupled to wires according to a preferred embodiment of the invention.
Fig. 3A and 3B are schematic layout views of wavelength conversion layers according to a preferred embodiment of the invention.
Fig. 4 is a cross-sectional view of a light emitting diode chip according to another preferred embodiment of the invention.
Fig. 5 is an equivalent circuit diagram of a light emitting diode chip according to a variation of another preferred embodiment of the invention.
Fig. 6 is a schematic diagram of a light emitting diode chip according to another preferred embodiment of the invention.
Fig. 7A is a schematic view of a supporting base according to a preferred embodiment of the invention.
Fig. 7B is a schematic diagram of a circuit substrate according to a preferred embodiment of the invention.
FIG. 7C is a schematic view of a reflector according to a preferred embodiment of the invention.
FIG. 7D is a schematic diagram of a diamond-like carbon film according to a preferred embodiment of the invention.
Fig. 8 is a schematic view of a light emitting device according to a preferred embodiment of the invention.
Fig. 9 is a schematic view of a light-emitting device according to another preferred embodiment of the invention.
Fig. 10A, 10B and 10C are schematic views illustrating the transparent substrate being inserted or adhered to the carrier according to a preferred embodiment of the invention.
Fig. 11A and 11B are schematic views illustrating a transparent substrate bonded to a carrier with a bracket according to a preferred embodiment of the invention.
Fig. 12 is a perspective view of a light emitting device according to another preferred embodiment of the invention.
Fig. 13 is a perspective view of a device base of a light-emitting device according to another preferred embodiment of the invention.
Fig. 14 is a perspective view of a light-emitting device according to another preferred embodiment of the invention.
Fig. 15A, 15B, 15C and 15D are schematic top views illustrating transparent substrates arranged on a supporting mechanism in a point symmetry or line symmetry manner according to a preferred embodiment of the invention.
Fig. 16 is a schematic view of a light-emitting device according to another preferred embodiment of the invention.
Fig. 17A and 17B are schematic views illustrating a lamp housing according to a preferred embodiment of the invention.
Fig. 17C is a top cross-sectional view of a billboard lamp housing in accordance with a preferred embodiment of the invention.
Fig. 17D, 17E, 17F and 17G are schematic diagrams of bulb-type implementations according to a preferred embodiment of the invention.
Fig. 18 is a schematic view of a light bar according to another preferred embodiment of the invention.
Fig. 19 is a perspective view of a light-emitting device according to another preferred embodiment of the invention.
Fig. 20 is a schematic view of a light-emitting device according to another preferred embodiment of the invention.
Detailed Description
The present invention will be described in detail below with reference to specific embodiments shown in the drawings. These embodiments are not intended to limit the present invention, and structural, methodological, or functional changes made by those skilled in the art according to these embodiments are included in the scope of the present invention.
Referring to fig. 1A and 1B, fig. 1A and 1B are schematic views of a light emitting diode chip or a light emitting panel according to a preferred embodiment of the invention. As shown in fig. 1A and 1B, the light emitting diode chip 1 includes: a transparent substrate 2; a growing surface 210; a first major surface 21A; a second main surface 21B and at least one multi-direction light-emitting diode structure 3. The transparent substrate 2 is a flat sheet and has two main surfaces, wherein any one of the main surfaces is a long surface 210, the led structure 3 with light emitting function is disposed on the long surface 210, and a light emitting surface 34 of the led structure 3 not shielded by the transparent substrate 2 and a portion of the long surface 210 where the led structure 3 is not disposed form a first main surface 21A capable of emitting light. The other principal surface of the transparent substrate 2, on which the light-emitting diode structure 3 is not provided, is the second principal surface 21B. The above-mentioned arrangement order is opposite equally can reach the effect, and also can set up the LED structure 3 in transparent base plate 2 two faces all, and wherein the LED structure 3 on two faces can correspond staggered arrangement, and when making the LED structure 3 on each face luminous, light can pierce through transparent base plate 2 smoothly and from another side light-emitting, and is not sheltered by the LED structure on the another side, increases the luminous intensity of unit area. The material of the transparent substrate 2 may be alumina (Al2O3), sapphire containing alumina, silicon carbide (SiC), glass, plastic or rubber, wherein a preferred embodiment of the present invention employs a sapphire substrate, because the material has a substantially single crystal structure, the material has a better light transmittance and a better heat dissipation capability, and the lifetime of the led chip 1 can be prolonged; however, the conventional sapphire substrate is easy to break, so that the experiment proves that the transparent substrate 2 of the invention is preferably a sapphire substrate with a thickness of 200 micrometers (um) or more, which can achieve better reliability and has better bearing and light transmission functions. Meanwhile, the light emitting diode structure 3 of the present invention preferably has a light emitting angle greater than 180 degrees, that is, the light emitting diode structure 3 disposed on the transparent substrate 2 can emit light beams leaving away from the substrate except for the light emitting surface 34, and the light emitting diode structure 3 can also emit at least a part of light beams entering the transparent substrate 2, and the light beams entering the transparent substrate 2 can emit light beams from the second main surface 21B of the transparent substrate 2 corresponding to the first main surface 21A, and can also emit light beams from the partial growth surface 210 of the transparent substrate 2 not having the light emitting diode structure 3 and other surfaces, so that the light emitting diode chip 1 can achieve at least multi-directional light emitting effects such as double-sided light emitting or omnidirectional light emitting. In the present invention, the area of the first main surface 21A or the second main surface 21B is five times or more the total area of the light-emitting surfaces 34 of the light-emitting diode structures 3, and thus the optimal arrangement ratio is designed to satisfy both the conditions of light-emitting efficiency and heat dissipation.
In addition, another preferred embodiment of the present invention is that the color temperature difference emitted from the first main surface 21A and the second main surface 21B of the led chip 1 is equal to or less than 1500K, so that the led chip 1 has more overall and consistent light emitting effect. On the light transmission characteristic of the transparent substrate 2, when the wavelength range of the light emitted by the led structure 3 is greater than or equal to 420 nm, and/or when the wavelength range of the light is less than or equal to 470 nm, the light transmittance of the transparent substrate 2 is greater than or equal to 70% under the condition of the thickness of the transparent substrate 2.
The present invention is not limited to the above embodiments. Other preferred embodiments of the present invention will be described in order to facilitate comparison of differences between the embodiments and simplify the description, the same reference numerals are used to designate identical components in the following embodiments, and the description is mainly directed to differences between the embodiments and will not be repeated.
Referring to fig. 2A, fig. 2B and fig. 2C, in order to obtain power supply for light emission, the light emitting diode structure 3 itself includes a first electrode 31A and a second electrode 31B, and the first electrode 31A and the second electrode 31B are electrically connected to a first connecting wire 23A and a second connecting wire 23B on the transparent substrate 2, respectively. Fig. 2A, fig. 2B and fig. 2C respectively show different types of led structures 3 and the coupling manner of the led structures and the wires. Fig. 2A is a horizontal led structure, wherein the led structure 3 is formed on the growth surface 210 of the transparent substrate 2, and the first electrode 31A and the second electrode 31B are electrically coupled to the first connecting wire 23A and the second connecting wire 23B by wire bonding, respectively; fig. 2B shows a flip-chip led structure, wherein the led structure 3 is inverted and coupled to the transparent substrate 2 via the first electrode 31A and the second electrode 31B, wherein the first electrode 31A and the second electrode 31B are electrically coupled to the first connecting wire 23A and the second connecting wire 23B by soldering or bonding, respectively; in fig. 2C, a first electrode 31A and a second electrode 31B are disposed at two ends of the led structure 3, and the led structure 3 is vertically disposed such that the first electrode 31A and the second electrode 31B are respectively connected to the first connecting wire 23A and the second connecting wire 23B.
Referring to fig. 3A and fig. 3B, the led chip 1 of the present invention further includes a wavelength conversion layer 4 disposed on the first main surface 21A and/or the second main surface 21B, or directly disposed on the led structure 3, and directly contacting the led structure 3, or adjacent to the led structure 3 for a distance without direct contact. The wavelength conversion layer 4 contains at least one phosphor, such as a garnet-based, sulfate-based, or silicate-based phosphor, which is an inorganic or organic phosphor, to receive at least a portion of the light emitted from the led structure 3 and convert the light into light in another wavelength range. For example, when the led structure 3 emits blue light, the wavelength conversion layer 4 converts a portion of the blue light into yellow light, so that the led chip 1 finally emits white light under the mixing of the blue light and the yellow light. In addition, since the light source of the first main surface 21A is mainly the light emitted from the light emitting surface of the led structure 3, and the light source of the second main surface 21B is the light emitted from the led structure 3 by penetrating the transparent substrate 2, and the light intensities of the two surfaces of the led chip 1 are different, another preferred embodiment of the invention is that the phosphor contents of the wavelength conversion layers 4 on the first main surface 21A and the second main surface 21B of the led chip 1 are configured accordingly, wherein the ratio of the phosphor contents of the first main surface 21A to the phosphor contents of the second main surface 21B (or the phosphor contents of the led structure to the phosphor contents of the second main surface 21B) is preferably from 1 to 0.5 to 1 to 3, so that the light intensity or light shape of the led chip 1 can meet the application requirements, and the difference of the color temperatures of the first main surface 21A and the second main surface 21B of the led chip 1 is equal to or less than 1500K, the wavelength conversion efficiency and the light emitting effect of the light emitting diode chip 1 are improved.
Please refer to fig. 4. Fig. 4 is a cross-sectional view of a light emitting diode chip according to another preferred embodiment of the invention. As shown in fig. 4, the led chip 10 of the present embodiment includes a transparent substrate 2, a plurality of led structures 14, an insulating layer 20 and a conductive pattern 22. The transparent substrate 2 has an elongated surface 210 and a second main surface 21B disposed opposite to each other. A plurality of led structures 14 are disposed or formed on the growth surface 210 of the transparent substrate 2, and each led structure 14 includes a first electrode 16 and a second electrode 18. A light emitting surface 34 of the led structure 14 not covered by the transparent substrate 2 and a portion of the long surface 210 where the led structure 14 is not disposed form a first main surface 21A. The insulating layer 20 is disposed on at least a portion of the plurality of led structures 14. The conductive pattern 22 is disposed on the insulating layer 20 and electrically connected to at least a portion of the first electrode 16 and at least a portion of the second electrode 18. The conductive pattern 22 can be a pattern formed by metal circuit layout or general wire bonding, but not limited to this, it can be a conductive pattern formed by other materials.
The led structure 14 may include a first semiconductor layer 141, an active layer 142 and a second semiconductor layer 143 sequentially formed on the transparent substrate 2. The first semiconductor layer 141 may preferably be an N-type semiconductor layer, and the second semiconductor layer 143 may preferably be a P-type semiconductor layer, but not limited thereto. The materials of the first semiconductor layer 141, the active layer 142 and the second semiconductor layer 143 include group iii nitride, such as aluminum nitride (AlN) or gallium nitride (GaN), but not limited thereto. The led chip 10 may further include a buffer layer 13 formed between the first semiconductor layer 141 and the transparent substrate 2. The material of the buffer layer 13 may include a group iii nitride, such as aluminum nitride (aln) or gallium nitride (GaN), but is not limited thereto. The first electrode 16 and the second electrode 18 are electrically connected to the second semiconductor layer 143 and the first semiconductor layer 141, respectively. The first electrode 16 and the second electrode 18 may be metal electrodes, but not limited thereto.
In addition, the led chip 10 further includes a wavelength conversion layer 4 disposed on the transparent substrate 2 and the led structure 14. The light (not shown) emitted by the led structure 14 can be a specific wavelength, and the wavelength conversion layer 4 can at least partially convert the specific wavelength, so that the led chip 10 can emit light with other specific wavelengths or a larger wavelength range.
In the present embodiment, the led structures 14 are electrically connected in series by the conductive patterns 22, but not limited thereto. In addition, in the embodiment, the insulating layer 20, the conductive pattern 22, the light emitting diode structure 14 (including the first semiconductor layer 141, the active layer 142, and the second semiconductor layer 143), and the buffer layer 13 are fabricated together, that is, the buffer layer 13, the first semiconductor layer 141, the active layer 142, and the second semiconductor layer 143 are sequentially disposed on the transparent substrate 2, and then the insulating layer 20 and the conductive pattern 22 are further sequentially disposed and cut. The insulating layer 20 and the conductive pattern 22 can be formed by photolithography and etching processes, but not limited thereto. The insulating layer 20, the conductive pattern 22 and the led structure 14 of the led chip 10 of the present embodiment are fabricated by a wafer-level fabrication method, which can greatly reduce the fabrication cost and have better reliability.
In the present invention, the second main surface 21B may optionally have a non-planar structure 12M in order to increase the amount of light exiting from the transparent substrate 2 and to make the distribution of the light uniform. The non-planar structures 12M may be various convex or concave geometric structures, such as pyramids, cones, hemispheres, triangular columns, etc., and the arrangement of the non-planar structures 12M may be regular or random. In addition, a diamond-like carbon (DLC) film 25 may be optionally disposed on the second main surface 21B to increase heat conduction and heat dissipation. In addition, an optical film 28 may be disposed between the second main surface 21B and the diamond-like carbon film 25. In terms of material selection, the refractive index of the optical film 28 may preferably be between the refractive index of the transparent substrate 2 and the refractive index of the diamond-like carbon film 25 or the refractive index of the wavelength conversion layer 4, and the amount of light emitted can be increased by such conversion.
Please refer to fig. 5, and also refer to fig. 4 and other figures. Fig. 5 is an equivalent circuit diagram of an led chip according to an alternative embodiment of the invention. As shown in fig. 5, in the present variation, the led structures 14 of the led chip 10' can be electrically connected in a series/parallel hybrid manner by the conductive pattern 22 and electrically coupled to an external power source through the connecting wires.
Referring to fig. 6, fig. 6 is a schematic perspective view of a light emitting diode chip according to another preferred embodiment of the invention. As shown in fig. 6, the led chip 310 of the present invention includes a transparent substrate 2, at least one led structure 3, a first connecting electrode 311A, a second connecting electrode 311B and at least one wavelength conversion layer 4. The led structure 3 is disposed on the growth surface 210 of the transparent substrate 2 to form a first main surface 21A for emitting light. In this embodiment, a light emitting angle of the led structure 3 is greater than 180 degrees, and at least a portion of light emitted by the led structure 3 can enter the transparent substrate 2, and at least a portion of the entered light can exit from a second main surface 21B corresponding to the first main surface 21A, and a portion of the entered light exits from other surfaces of the transparent substrate 2, so as to achieve a multi-surface or six-surface light emitting effect. The first connection electrode 311A and the second connection electrode 311B are respectively disposed at two ends or at the same side (not shown) of the transparent substrate 2, and are respectively chip external electrodes extending from a first connection wire and a second connection wire on the transparent substrate 2, so that the first connection electrode 311A and the second connection electrode 311B are respectively electrically connected to the led structure 3. The wavelength conversion layer 4 at least covers the light emitting diode structure 3 and/or the second main surface 21B and exposes at least a portion of the first connection electrode 311A and the second connection electrode 311B, wherein the wavelength conversion layer 4 at least partially absorbs the light emitted by the light emitting diode structure 3 and/or the transparent substrate 2, converts the light into light of another wavelength, and mixes the light with the light which is not absorbed, thereby increasing the light emitting wavelength range and the light emitting effect of the light emitting diode chip 310. That is, the wavelength conversion layer 4 may not cover the first connection electrode 311A and the second connection electrode 311B. Since the led chip 310 of the present embodiment has the first connection electrode 311A and the second connection electrode 311B respectively disposed at two opposite ends of the transparent substrate 2, the led chip 310 can be combined with a suitable carrier after being manufactured independently without using a conventional led package process, thereby achieving the effects of improving the overall manufacturing yield, simplifying the structure, increasing the design change of the carrier, and the like.
Referring to fig. 7A, an embodiment of the invention is a light emitting device 11 using the above light emitting diode chip, wherein the light emitting device 11 further includes a carrying seat 5, such that the transparent substrate 2 of the light emitting diode chip can be flatly placed on the carrying seat 5, or can be vertically disposed thereon and coupled to the carrying seat 5, such that a first included angle θ is formed between the transparent substrate 2 and the carrying seat 51The first included angle theta1The angle can be fixed or adjusted according to the light shape of the light-emitting device, wherein the first included angle theta of the preferred embodiment1The angle ranges between 30 degrees and 150 degrees.
Referring to fig. 7B, the carrier 5 of the light emitting device 11 of the present invention further includes a circuit substrate 6 coupled to an external power source, and electrically coupled to the first connecting wires and the second connecting wires (not shown) on the transparent substrate 2, and electrically connected to the light emitting diode structures 3, so that the external power source supplies power to the light emitting diode structures 3 through the circuit substrate. If the circuit substrate 6 is not disposed, the led structure 3 can also be electrically connected to the carrying seat 5 directly through the first connecting wire and the second connecting wire (not shown), so that an external power source can supply power to the led structure 3 through the carrying seat 5.
Referring to fig. 7C, the light emitting device 11 of the present invention further includes a reflector or a filter 8 disposed on the second main surface 21B or the growth surface 210, wherein the reflector or the filter 8 can reflect at least a portion of the light emitted from the light emitting diode structure 3, and further, a portion of the light incident on the transparent substrate 2 is emitted from the first main surface 21A. The reflector 8 may include at least one metal layer or a Bragg reflector (Bragg reflector), but is not limited thereto. The Bragg reflector can be formed by stacking a plurality of dielectric films with different refractive indexes or by stacking a plurality of dielectric films with different refractive indexes and a plurality of metal oxides.
Referring to fig. 7D, the transparent substrate 2 of the light emitting device 11 of the present invention further includes a diamond-like carbon (DLC) film 9, wherein the DLC film 9 is disposed on the growth surface 210 and/or the second main surface 21B of the transparent substrate 2 to increase heat conduction and heat dissipation.
Please refer to fig. 8. Fig. 8 is a schematic view of a light-emitting device according to a preferred embodiment of the invention. As shown in fig. 8, the light emitting device 100 of the present embodiment includes a light emitting diode chip 10 and a carrier 26, wherein the light emitting diode chip 10 is embedded in the carrier 26 and electrically connected to the electrodes 30 and 32 of the carrier through the connecting wires, and a power source can provide a driving voltage V + and V-through the electrodes 30 and 32 to drive the light emitting diode chip 10 to emit light L. In the light emitting device 100 of the present embodiment, the structure of the light emitting diode chip 10 can be as described in the above embodiment, and the conductive pattern 22 is electrically connected to at least a portion of the first electrode 16 and the second electrode 18 of the light emitting diode structure 14, so that at least a portion of the light emitting diode structure 14 forms a series circuit or other circuits such as a parallel circuit or a series-parallel circuit, wherein the conductive pattern 22 can be, for example, a metal circuit layout or a general routing pattern, but is not limited thereto, and can also be a conductive pattern formed by other materials or forms; the first electrode 16 and the second electrode 18 which are not connected to the conductive pattern 22 are electrically connected to the electrodes 30 and 32 of the carrier 26 through the connecting wires, respectively. In addition, the light emitting angle of the light L emitted by at least one led structure 14 of the led chip 10 is greater than 180 degrees or has a plurality of light emitting surfaces, such that the light emitting direction of the led chip 10 includes light emitted from the first main surface 21A and the second main surface 21B, and a portion of the light can also be emitted from the led structure 14 and/or the four sidewalls of the transparent substrate 2, such that the led chip 10 has multi-directional light emitting characteristics, such as six-sided light emitting or omnidirectional light emitting.
In addition, the light emitting diode chip 10 of the present embodiment further includes a wavelength conversion layer 4, a diamond-like carbon film 25 and an optical film 28 sequentially disposed on the second main surface 21B of the transparent substrate 2, and the wavelength conversion layer 4 may be further disposed on the light emitting diode structure 14 or the first main surface 21A. The wavelength conversion layer 4 can convert at least a portion of the light emitted by the led structure 14 into light in another wavelength range, so that the led chip 10 emits light with a specific color or a larger wavelength range, for example, a portion of the blue light generated by the led structure 14 can be converted into yellow light after illuminating the wavelength conversion layer 4, and the led chip 10 can emit white light formed by mixing the blue light and the yellow light. The light emitting diode structures 14 and the light emitting diode chips 10 have improved heat dissipation and light emitting efficiency due to the diamond-like carbon film 25 and the optical film 28, and the transparent substrate 2 of the light emitting diode chip 10 has a material with good heat conduction characteristics, so that heat generated by the light emitting diode structures can be directly conducted to the carrying seat 26, so that the light emitting device of the present invention can use a high-power light emitting diode structure, but the light emitting device of the preferred embodiment forms and distributes a plurality of light emitting diode structures with smaller power on the substrate 12 under the same power condition, so as to fully utilize the heat conduction characteristics of the substrate 12, for example, the power of each light emitting diode structure 14 of the present embodiment is less than or equal to, for example, 0.2 watt, but not limited thereto.
Please refer to fig. 9. Fig. 9 is a schematic view of a light-emitting device according to a preferred embodiment of the invention. As shown in fig. 9, the light emitting device 200 of the present embodiment further includes a support 51 for connecting the led chip 10 and the carrier 26, wherein the led chip 10 is fixed on one side of the support 51 by a bonding layer 52, and the other side of the support 51 can be disposed on the carrier 26. In addition, the angle theta of the support 51 can be adjusted elastically1So that the included angle theta between the LED chip 10 and the carrier 261Between 30 and 150 degrees. The material of the support 51 may include aluminum metal or aluminum alloyAny one of a metal material, a copper wire, an electric wire, a ceramic substrate, or a printed circuit board.
Referring to fig. 10A, 10B and 10C, when the transparent substrate 2 of the present invention is disposed on the carrying seat 5, the preferred embodiment can achieve the connection of the two by inserting or adhering.
As shown in fig. 10A, the transparent substrate 2 is disposed on the carrier 5 and is inserted into the single-hole slot 61 of the carrier 5, such that the led chip is electrically coupled to the slot 61 through the connecting wires. At this time, the led structure (not shown) on the transparent substrate 2 is coupled to the power supply of the carrier 5, and the conductive pattern or the connecting wire on the transparent substrate 2 extends to the edge of the transparent substrate 2 and is integrated into a gold finger structure having a plurality of conductive contact pads or connecting electrodes 311A and 311B, i.e. electrical ports. The slot 61 allows the transparent substrate 2 to be inserted, so that the transparent substrate 2 is fixed in the slot 61 of the carrier 5 while the led structure (not shown) is powered by the carrier 5.
Fig. 10B is a schematic structural view of a multi-hole slot formed on the carrier 5 by inserting the transparent substrate 2. In this embodiment, the transparent substrate 2 has at least a two-pin structure, wherein one pin can be an electrically positive electrode, the other can be an electrically negative electrode, and both have a conductive contact as a port. That is, the pin is provided with at least one electrical port. Correspondingly, the carrying seat 5 has at least two slots 61 corresponding to the insertion surface of the pins, so that the transparent substrate 2 can be smoothly connected with the carrying seat 5 and the light emitting diode structure can be powered.
Referring to fig. 10C, the transparent substrate 2 is bonded to the carrier 5. In the bonding process, the bonding can be performed by using gold, tin, indium, bismuth, silver, or other metals as welding aids, or by using conductive silica gel or epoxy resin to assist in fixing the transparent substrate 2, and the conductive pattern or the connecting wire of the led chip can be electrically connected to the electrode on the carrier via the bonding layer.
Referring to fig. 11A and 11B, the light emitting device 11 of the present embodiment is mainly formed as described in the above embodiments, wherein the carrier is disposed on the substrateThe base 5 may be a metal substrate such as a bendable aluminum metal, a composite aluminum-containing material, a copper wire or a wire, or a ceramic substrate or a printed circuit board. The surface or side of the carrier 5 has at least one support 62, and the support 62 is a separate or integrated component from the carrier 5. The led chip can be coupled to the support 62 by bonding or soldering, that is, the transparent substrate 2 is fixed to the carrier 5 by the bonding layer 63, and the led chip and the surface of the carrier 5 without the support maintain a first included angle θ1And the surface of the part without the support of the bearing seat 5 can also be provided with a light emitting diode chip to improve the light emitting effect of the light emitting device 11; in addition, the led chip can also be connected to the bracket 62 by plugging (not shown), that is, the transparent substrate 2 is fixed to the carrier 5 by the connector combining the chip and the bracket and/or the bracket and the carrier. Because the supporting base 5 and the bracket 62 are bendable, the flexibility of the light emitting device 11 in application is increased, and a plurality of light emitting diode chips with different light emitting wavelengths can be used to combine different light colors, so that the light emitting device 11 has variability to meet different requirements.
Please refer to fig. 12. As shown in fig. 12, the light emitting device of the present embodiment includes at least one led chip 1 and a carrier 5, wherein the carrier 5 includes at least one support 62 and at least one circuit pattern P. The main components of the led chip 1 can be as described in the previous embodiments, and one end of the transparent substrate is coupled to the support 62 to avoid or reduce the shielding effect of the support 62 on the light emitted from the led chip 1. The carrier 5 can be an aluminum substrate, a composite aluminum substrate, a copper wire or a wire, or a ceramic substrate or a printed circuit board, and the bracket 62 can be cut from a portion of the carrier 5 and bent at an angle (the first included angle θ shown in fig. 11A and 11B is described above)1) And (4) preparing the composition. The circuit pattern P is disposed on the carrier 5, and has at least 1 set of electrical terminals electrically connected to a power source, and a portion of the circuit pattern P extends to the support 62 and is electrically connected to the connecting wires on the led chip 1, so that the led chip 1 can be electrically connected to the power source through the circuit pattern P of the carrier 5. The carrier 5 further includes at least one hole H orThe gap G is reduced, so that the bearing seat 5 and other components can be further constructed or installed through the hole H or the gap G by using a fixing member such as a screw, a nail or a bolt according to the application condition of the light-emitting device, and the hole H or the gap G also increases the heat dissipation area of the bearing seat 5, thereby improving the heat dissipation effect of the light-emitting device.
Please refer to fig. 13. Fig. 13 is a perspective view of a device base of a light-emitting device according to another preferred embodiment of the invention. As shown in fig. 13, the device base 322 of the present embodiment includes a carrier 5 and at least one support 62, and compared with the embodiment of fig. 12, the support 62 of the present embodiment further includes at least one strip portion 342 and a gap 330, wherein the electrodes 30 and 32 are respectively disposed on two sides or the same side (not shown in fig. 13) of the gap 330, and the strip portion 342 at least forms a sidewall of the gap 330. A led chip is coupled to the bracket 62 corresponding to the gap 330, and the connecting wires of the led chip are electrically connected to the electrodes 30 and 32, so that the led chip can be driven by electrically coupling the bracket 62 and the circuit pattern on the carrier with a power source. The size of the gap 330 is not smaller than a main light emitting surface of the led chip, so that the light emitting surface of the led chip facing the direction of the support 62 is not shielded by the support 62. The connecting portion between the supporting frame 62 and the supporting base 5 can be movably designed, so that the included angle between the supporting frame 62 and the supporting base 5 can be adjusted as required.
Please refer to fig. 13 and 14. Fig. 14 is a perspective view of a light-emitting device according to another preferred embodiment of the invention. Compared to the embodiment shown in fig. 13, the light-emitting device 302 shown in fig. 14 further includes at least one bracket 62 having a plurality of notches 330, wherein the notches 330 are respectively disposed on two sides of the bracket 62, so that the strip portion 342 forms at least one side wall of the notches 330. The plurality of led chips 310 are disposed corresponding to the plurality of gaps 330, and the conductive patterns or connection electrodes (not shown) of the led chips 310 are disposed corresponding to and electrically connected to the electrodes 30 and 32, respectively. The light emitting device 302 of the present embodiment further includes a plurality of brackets 62, and an included angle between each bracket 62 provided with the led chip 310 and the carrier 5 can be adjusted according to needs, in other words, included angles between at least some of the brackets 62 and the carrier 5 can be different from each other to achieve a desired light emitting effect, but not limited thereto. In addition, the light emitting diode chip combinations with different light emitting wavelength ranges can be arranged on the same bracket or different brackets, so that the color effect of the light emitting device is richer.
In order to enhance the brightness and improve the light emitting effect, the light emitting device of another embodiment of the present invention arranges the led chips formed by the plurality of transparent substrates on the carrying seat or other carrying mechanism of the above embodiments at the same time, and at this time, the led chips can be arranged in a symmetrical or asymmetrical manner, i.e., the led chips formed by the plurality of transparent substrates are arranged on the carrying mechanism in a point-symmetrical or line-symmetrical manner. Referring to fig. 15A, fig. 15B, fig. 15C and fig. 15D, in the light emitting device of each embodiment, a plurality of light emitting diode chips are disposed on the supporting mechanism 60 with various shapes, and the light emitting of the whole light emitting device 11 can be uniform in a point symmetry or line symmetry manner (the light emitting diode structure is not shown), and the light emitting effect of the light emitting devices 11 can be further adjusted and improved by changing the size of the first included angle. As shown in fig. 15A, the led chips are disposed at 90 ° angles in a point-symmetric manner, and at this time, the led chips are all directly opposite to at least 2 led chips when viewed from any of the four sides of the light emitting device into the light emitting device; fig. 15B shows a light-emitting device in which the led chips have an included angle smaller than 90 degrees; the included angle between the led chips of the light emitting device shown in fig. 15D is greater than 90 degrees. In another embodiment, the led chips are at least partially disposed in a centralized or distributed manner in an asymmetric arrangement manner, so as to meet the light shape requirement of the light emitting device in different applications (not shown).
Please refer to fig. 16. Fig. 16 is a schematic cross-sectional view of a light-emitting device according to another preferred embodiment of the invention. As shown in fig. 16, the light emitting device 301 includes a light emitting diode chip 310 and a support 321. The bracket 321 includes a gap 330, and the led chip 310 is disposed corresponding to the gap 330. The extending portion of the support 321 of the present embodiment can be used as a pin or bent to form a pad required for surface soldering, so as to be fixed and/or electrically connected to other circuit components. Since a light-emitting surface of the led chip 310 is disposed in the gap 330, the light-emitting device 301 can maintain a multi-directional light-emitting effect of six-sided light emission regardless of whether the support 321 is made of a light-transmitting material.
Referring to fig. 17A, a light emitting device according to an embodiment of the invention includes an elongated tubular lamp housing 7, at least one led chip 1, and a carrying mechanism 60, wherein the led chip 1 is disposed on the carrying mechanism 60 and at least a portion of the led chip is located in a space formed by the elongated tubular lamp housing 7. Referring to fig. 17B, the embodiment includes more than two led chips 1 disposed in the lamp housing 7, and the first main surfaces 21A of the led chips 1 are arranged in a non-parallel manner. In addition, the led chip 1 is at least partially disposed in the space formed by the lamp housing 7 and is not tightly attached to the inner wall of the lamp housing 7, and in the preferred embodiment, a distance D greater than or equal to 500 micrometers (μm) is formed between the led chip 1 and the lamp housing 7; however, it is also possible to form the lamp housing 7 in a glue-filling manner, and to make the lamp housing 7 at least partially cover and directly contact the led chip 1.
Referring to fig. 17C, in a light emitting device according to another embodiment of the present invention, a lamp housing 7 of the light emitting device has at least one cover 71, the cover 71 can be a printed sheet printed with an advertisement or other display devices requiring a backlight source, and the light provided by the first main surface 21A and the second main surface 21B of the led chip 1 of the present invention forms a backlight of the cover 71, wherein an angle range of a second included angle formed between the led chip 1 and the cover 71 is between 0 degree and 45 degrees (the second included angle is 0 degree in the figure, and is not shown). In order to ensure that the light generated by the led chip or the light-emitting plate/sheet, which is formed by combining the transparent substrate and the led structure emitting light in multiple directions, can uniformly penetrate through the lamp housing 7, the led chip 1 is at least partially disposed in the space formed by the lamp housing 7 and does not substantially adhere to the inner wall of the lamp housing 7, and in the preferred embodiment, a distance D greater than or equal to 500 micrometers is formed between the led chip 1 and the lamp housing 7; however, the lamp housing 7 may be formed by glue filling, and the lamp housing 7 at least partially covers and directly contacts the transparent substrate 2.
Referring to fig. 17D, 17E, 17F and 17G, in another series of embodiments of the present invention, the light emitting device further includes a spherical lamp housing 7 and a base 64. In fig. 17D, compared to the previous embodiment, the light emitting device of the present embodiment further includes a spherical lamp housing 7, and a supporting base 5 is further disposed on a base 64, wherein the base 64 can be a conventional bulb base, the lamp housing 7 can be coupled to the base 64 and cover the led chip and the supporting base 5, or the lamp housing 7 can be directly coupled to the supporting base 5 and cover the led chip. The base 64 can be in the form of a platform or other load bearing projection, as shown in FIG. 17E. In fig. 17F, the inside of the lamp housing 7 is coated with a wavelength conversion layer 4, so that at least a portion of the light generated by the led structure 3 can be converted into light of another wavelength range before leaving the lamp housing 7. Fig. 17G shows a design using a lamp housing 7 and a lamp housing 7 ' with two layers, in which a space S is formed between the lamp housing 7 and the lamp housing 7 ', and the light-emitting device can further change the light-emitting effect such as pattern and color by using the lamp housing 7, the lamp housing 7 ' and the space S therebetween.
Referring to fig. 18 and 19, fig. 18 is a schematic view of a light bar according to another preferred embodiment of the present invention, and fig. 19 is a perspective view of a light emitting device according to another preferred embodiment of the present invention. As shown in fig. 18, the light bar 323 of the present embodiment includes a plurality of notches 330. The light bar 323 has an extending direction X, and the notches 330 are arranged along the extending direction X. The led chips emitting light in multiple directions are disposed corresponding to the notch 330 of the light bar 323 to form a light bar, but not limited thereto. In addition, the light bar 323 further includes a plurality of electrodes 30 and 32 with different electrical properties, a first external connecting electrode 350A and a second external connecting electrode 350B. The electrodes 30 and 32 are disposed on either side or the same side (not shown) of each notch 330. The first and second continuous external electrodes 350A and 350B are electrically connected to the electrodes 30 and 32 respectively and disposed on two sides of the light bar 323. As shown in fig. 19, the light emitting device 303 includes the light bar 323 and a device frame 360. The light bar 323 having the led chip 310 may be disposed on the device frame 360 in a vertical, horizontal or inclined manner, and the light bar 323 may be electrically connected to a power source through the device frame 360 by the first external connection electrode 350A and the second external connection electrode 350B disposed at two sides, but not limited thereto. In addition, the light emitting device 303 may also be combined with a suitable optical film (e.g., a diffusion film) as required to adjust the light emitting effect of the led chips 310 in the device frame 360.
Referring to fig. 20, fig. 20 is a schematic view of a light emitting device according to another preferred embodiment of the invention. As shown in fig. 20, the light emitting device 304 includes a plurality of led chips 310 and a carrier 324. The carrier 324 includes a plurality of notches 330, the notches 330 are arranged in a matrix, and each led chip 310 is disposed corresponding to the notch 330. The connection manner of the led chips 310 and the gaps 330 of the present embodiment is similar to that of the above embodiments, and therefore, the description thereof is omitted. In the present embodiment, the carrier 324 further includes a first external connection electrode 350A and a second external connection electrode 350B for electrically connecting with other external components. In addition, the light emitting device 304 of the present embodiment can be used for a billboard or a direct-type backlight module, and the preferred embodiment of the supporting base 324 has a light-transmitting property, but not limited thereto.
In summary, the led chip of the present invention uses the transparent substrate and the led structure with light emitted through the transparent substrate, so that it has multi-directional light emitting effects such as six-sided light emitting or omnidirectional light emitting, and can improve the light emitting efficiency and improve the problem of poor light type of the conventional led chip. In addition, the transparent substrate comprises a material selected from materials with good heat conduction characteristics, so that heat energy generated by the light-emitting diode structure can be quickly dissipated through the transparent substrate. Meanwhile, the insulating layer, the conductive pattern and the light-emitting diode structure of the light-emitting diode chip can be manufactured by a wafer-level manufacturing method, so that the manufacturing cost can be greatly saved, and the reliability is better.
The light emitting diode chip or the light emitting plate/the light emitting sheet disclosed by the invention is formed by arranging the light emitting diode structure on the transparent substrate, so that the light emitting diode chip can be effectively and fully and flexibly applied; and two main surfaces of the light-emitting diode chip can emit light, so that the maximum light-emitting efficiency can be obtained under the condition of minimum power supply, and the light-emitting diode chip has uniform light-emitting effect, can show the advantages of good light-emitting effect, low power consumption, uniform light-emitting and the like no matter being applied to the fields of bulbs, fluorescent tubes, advertising boards and the like, and is really the light-emitting diode chip with economic and practical values.

Claims (27)

1. A light-emitting device, comprising:
a light emitting diode chip comprising:
a transparent substrate having an elongated surface and a side surface;
a first light emitting diode structure disposed on the growth surface, having a first side surface;
a second light emitting diode structure disposed on the growth surface, having a second side surface;
a conductive wire having two ends directly connected to the first and second LED structures, respectively, and having a portion covering the first and second side surfaces;
a wavelength conversion layer covering the first and second light emitting diode structures;
a support having a first surface connected with the transparent substrate, the first surface being parallel to the growth surface;
a bonding layer formed between the light emitting diode chip and the support; and
bear the seat, connect the support, bear the seat with the support forms a contained angle that is not 90 degrees.
2. The light-emitting device according to claim 1, wherein the transparent substrate is a sapphire substrate.
3. The light-emitting device according to claim 1, wherein the wavelength conversion layer continuously covers the first light-emitting diode structure and the second light-emitting diode structure.
4. The light-emitting device according to claim 1, wherein the first and second light-emitting diode structures are connected in series.
5. The light emitting device of claim 1, wherein the wavelength conversion layer directly contacts the first light emitting diode structure.
6. The light-emitting device according to claim 1, wherein the transparent substrate further comprises a first portion not covered by the wavelength conversion layer.
7. The light-emitting device according to claim 6, wherein the light-emitting diode chip further comprises a connection electrode provided on the first portion.
8. The light-emitting device according to claim 1, wherein the transparent substrate further comprises a main surface opposite to the growth surface, and wherein the wavelength conversion layer covers the main surface.
9. The device of claim 8, wherein at least some of the light emitted by the first led structure is incident on the transparent substrate and exits the major surface.
10. The light-emitting device according to claim 1, wherein the first light-emitting diode structure comprises a buffer layer, a first semiconductor layer, an active layer and a second semiconductor layer, and the buffer layer is directly formed on the growth surface.
11. A light-emitting device, comprising:
the bearing seat is provided with a positive electrode and a negative electrode; and
the light emitting diode chip is embedded in the bearing seat and comprises:
the substrate is provided with a width, a length and an upper surface, and a first end and a second end which are oppositely arranged in the length direction;
a plurality of light emitting diode structures arranged on the upper surface along the length direction; and
a metal trace on the upper surface in electrical connection with the plurality of light emitting diode structures, the metal trace having a first portion extending in the direction of the width and a second portion electrically connecting the positive electrode and the negative electrode, the first portion being at the first end and the second portion being at the second end,
wherein the second portion has a positive connection electrode connected to the positive electrode, and a negative connection electrode connected to the negative electrode.
12. The light-emitting device according to claim 11, further comprising a support for connecting the carrier and the led chip.
13. The apparatus of claim 11, wherein the carrier has a slot for fixing the substrate.
14. The light emitting device of claim 11, further comprising a conductive contact at the second end, the conductive contact being electrically connected to the second portion.
15. The light-emitting device according to claim 11, further comprising a wavelength conversion layer covering the plurality of light-emitting diode structures.
16. The light-emitting device according to claim 11, wherein an angle between the led chip and the carrier is between 30 degrees and 150 degrees.
17. The light-emitting device according to claim 11, wherein the plurality of light-emitting diode structures are not located on the first portion.
18. A light-emitting device, comprising:
the bearing seat is provided with a positive electrode and a negative electrode;
the bracket is coupled with the bearing seat, and a slot is formed between the bracket and the bearing seat;
a light emitting diode chip embedded within the socket, the light emitting diode chip comprising:
a substrate having a width, a length, and an upper surface;
a plurality of light emitting diode structures arranged on the upper surface of the substrate along the length direction; and
a metal line electrically connected to the plurality of light emitting diode structures;
the bonding layer is positioned between the bracket and the light-emitting diode chip, and the bonding layer, the positive electrode and the negative electrode are positioned on the opposite sides of the substrate;
the lamp shell wraps the light-emitting diode chip; and
a base coupled with the lamp housing.
19. The light emitting device of claim 18, wherein the substrate further comprises a lower surface disposed opposite the upper surface, the lower surface being free of light emitting diode chips.
20. The light-emitting device according to claim 18, wherein the bonding layer is located on a side of the substrate opposite the plurality of light-emitting diode structures.
21. The light emitting device of claim 18, wherein the metal traces have a second portion that extends to an end of the substrate to form conductive contacts.
22. The light-emitting device according to claim 18, further comprising a wavelength conversion layer covering the plurality of light-emitting diode structures.
23. The light-emitting device according to claim 18, wherein an angle between the led chip and the carrier is between 30 degrees and 150 degrees.
24. The light-emitting device according to claim 22, wherein the wavelength conversion layer does not cover a side surface of the substrate.
25. The lighting device according to claim 18, wherein the lamp housing covers the carrier.
26. The lighting device of claim 18, wherein said lamp envelope is formed by potting.
27. The lighting device of claim 18, wherein said lamp housing at least partially encloses and directly contacts said light emitting diode chip.
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