TWI560912B - Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same - Google Patents

Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

Info

Publication number
TWI560912B
TWI560912B TW100112646A TW100112646A TWI560912B TW I560912 B TWI560912 B TW I560912B TW 100112646 A TW100112646 A TW 100112646A TW 100112646 A TW100112646 A TW 100112646A TW I560912 B TWI560912 B TW I560912B
Authority
TW
Taiwan
Prior art keywords
fabricating
light emitting
emitting diode
same
diode chip
Prior art date
Application number
TW100112646A
Other languages
Chinese (zh)
Other versions
TW201145607A (en
Inventor
Jung-Hwa Jung
Bang-Hyun Kim
Original Assignee
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100090352A external-priority patent/KR101719642B1/en
Priority claimed from KR1020100110149A external-priority patent/KR101230619B1/en
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Publication of TW201145607A publication Critical patent/TW201145607A/en
Application granted granted Critical
Publication of TWI560912B publication Critical patent/TWI560912B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401—Structure
    • H01L2224/1403—Bump connectors having different sizes, e.g. different diameters, heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
TW100112646A 2010-05-18 2011-04-12 Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same TWI560912B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20100046423 2010-05-18
KR1020100090352A KR101719642B1 (en) 2010-09-15 2010-09-15 Light-emitting diode package and method of manufacturing the same
KR20100096682 2010-10-05
KR1020100110149A KR101230619B1 (en) 2010-05-18 2010-11-08 Light emitting diode chip having wavelength converting layer, method of fabricating the same and package having the same

Publications (2)

Publication Number Publication Date
TW201145607A TW201145607A (en) 2011-12-16
TWI560912B true TWI560912B (en) 2016-12-01

Family

ID=45410250

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100112646A TWI560912B (en) 2010-05-18 2011-04-12 Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

Country Status (3)

Country Link
JP (1) JP2011243977A (en)
CN (1) CN103003966B (en)
TW (1) TWI560912B (en)

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US11011681B2 (en) 2013-11-14 2021-05-18 Epistar Corporation Light-emitting device and the method of manufacturing the same

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US9166116B2 (en) 2012-05-29 2015-10-20 Formosa Epitaxy Incorporation Light emitting device
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CN106169467B (en) * 2013-05-22 2020-06-02 晶元光电股份有限公司 Light emitting device
JP6360173B2 (en) * 2013-07-22 2018-07-18 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Flip chip side-emitting LED
CN105580144B (en) * 2013-07-24 2019-08-02 晶元光电股份有限公司 Luminous die and correlation technique comprising wavelength conversion material
JP6098439B2 (en) * 2013-08-28 2017-03-22 日亜化学工業株式会社 Wavelength conversion member, light emitting device, and method of manufacturing light emitting device
TWI580079B (en) * 2013-12-26 2017-04-21 新世紀光電股份有限公司 Light emitting diode package structure and light emitting diode module
TW201616689A (en) * 2014-06-25 2016-05-01 皇家飛利浦有限公司 Packaged wavelength converted light emitting device
TWI641285B (en) 2014-07-14 2018-11-11 新世紀光電股份有限公司 Light emitting module and method for manufacturing light emitting unit
TWI570961B (en) * 2014-09-19 2017-02-11 Wen-Bin Chen A light emitting diode (LED) wafer having a color purified structure
KR102263065B1 (en) * 2014-09-26 2021-06-10 서울바이오시스 주식회사 Light emitting device and method of fabricating the same
TWI701848B (en) * 2014-10-21 2020-08-11 新世紀光電股份有限公司 Light emitting device
CN111490146A (en) * 2014-11-18 2020-08-04 首尔半导体株式会社 Light emitting device
WO2016098853A1 (en) * 2014-12-19 2016-06-23 エルシード株式会社 Light-emitting element
TWI677113B (en) * 2014-12-24 2019-11-11 晶元光電股份有限公司 Light-emitting device and manufacturing method thereof
KR102345751B1 (en) 2015-01-05 2022-01-03 삼성전자주식회사 Semiconductor light emitting device package and method for manufacturing the same
KR102380825B1 (en) 2015-05-29 2022-04-01 삼성전자주식회사 Semiconductor light emitting diode chip and light emitting device having the same
TWI583020B (en) * 2015-07-06 2017-05-11 隆達電子股份有限公司 Light emitting element and light emitting device
JP5980388B2 (en) * 2015-07-23 2016-08-31 キヤノン株式会社 Electromechanical converter
KR102481646B1 (en) * 2015-11-12 2022-12-29 삼성전자주식회사 Semiconductor light emitting device package
JP7080010B2 (en) * 2016-02-04 2022-06-03 晶元光電股▲ふん▼有限公司 Light emitting element and its manufacturing method
TWI780041B (en) 2016-02-04 2022-10-11 晶元光電股份有限公司 Light-emitting element and the manufacturing method thereof
KR102527387B1 (en) * 2016-02-24 2023-04-28 삼성전자주식회사 Light emitting device package and method of manufacturing the same
JP6668996B2 (en) 2016-07-29 2020-03-18 日亜化学工業株式会社 Light emitting device and method of manufacturing the same
KR20180065342A (en) 2016-12-07 2018-06-18 엘지전자 주식회사 Display device using semiconductor light emitting device
US10243124B2 (en) 2016-12-26 2019-03-26 Nichia Corporation Light emitting device
US10319889B2 (en) 2016-12-27 2019-06-11 Nichia Corporation Light emitting device
JP2018190830A (en) * 2017-05-08 2018-11-29 豊田合成株式会社 Semiconductor light-emitting device
KR102499308B1 (en) * 2017-08-11 2023-02-14 서울바이오시스 주식회사 Light emitting diode
CN107706275B (en) * 2017-09-29 2023-10-13 华灿光电（浙江）有限公司 Light-emitting diode chip, panel and manufacturing method thereof
KR20190074233A (en) * 2017-12-19 2019-06-27 서울반도체 주식회사 Light emitting device and light emitting module including the sam
KR20190132215A (en) * 2018-05-18 2019-11-27 서울반도체 주식회사 Light emitting diode, light emitting diode module and display device having the same
CN112687775B (en) * 2019-10-18 2021-11-16 厦门三安光电有限公司 Light-emitting diode
US11398437B2 (en) * 2019-12-13 2022-07-26 Semiconductor Components Industries, Llc Power device including metal layer
CN114068785A (en) * 2021-09-30 2022-02-18 华灿光电（浙江）有限公司 Light emitting diode chip for increasing lateral light emitting and preparation method thereof

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Also Published As

Publication number Publication date
CN103003966A (en) 2013-03-27
TW201145607A (en) 2011-12-16
CN103003966B (en) 2016-08-10
JP2011243977A (en) 2011-12-01

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