CN111200045A - AlGaInP LED chip with mutually independent reflector and P electrode and preparation method thereof - Google Patents
AlGaInP LED chip with mutually independent reflector and P electrode and preparation method thereof Download PDFInfo
- Publication number
- CN111200045A CN111200045A CN202010222574.9A CN202010222574A CN111200045A CN 111200045 A CN111200045 A CN 111200045A CN 202010222574 A CN202010222574 A CN 202010222574A CN 111200045 A CN111200045 A CN 111200045A
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- metal layer
- led chip
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Abstract
The invention discloses an AlGaInP LED chip with mutually independent reflector and P electrode and a preparation method thereof, wherein the chip sequentially comprises the following components from bottom to top: the light-emitting diode comprises a substrate, a bonding metal layer, a P electrode metal layer, a reflection metal layer, a low-refractive-index dielectric layer, a P-type doping layer, a light-emitting layer, a roughened layer with a roughened surface, an N-type doping layer and an N electrode, wherein the reflection metal layer and the low-refractive-index dielectric layer form an omnibearing reflector; the N electrode consists of a bonding pad and a plurality of extension electrode wires, and the P electrode hole is positioned between the adjacent extension electrode wires. The AlGaInP LED chip with the mutually independent reflector and the P electrode can simultaneously give consideration to high light reflectivity and low ohmic contact, and finally can improve the electro-optic conversion efficiency of the AlGaInP LED chip.
Description
Technical Field
The invention relates to the field of light emitting diodes, in particular to an AlGaInPLED chip with mutually independent reflector and P electrode and a preparation method thereof.
Background
The light extraction efficiency of the AlGaInP quaternary system red light LED chip with the conventional structure is very low, only about 10%, mainly due to the following reasons: (1) the GaAs substrate has the absorption effect on visible light, so that light rays emitted to the substrate by the active layer and light rays reflected by the upper surface are completely absorbed by the GaAs substrate; (2) since the refractive index of GaP is high (n)GaP=3.2), causing the light emitted from the light-emitting region of the LED to suffer from the phenomenon of total interfacial reflection when exiting through the chip surface into the air, only a very small portion of the light can exit outside the device (approximately 2.4%). Fig. 1 is a schematic diagram of an AlGaInP LED epitaxial structure.
In order to improve the light extraction efficiency of the chip, and to extract as much light as possible from the downwardly emitted light and the light reflected back from the upper surface into the semiconductor, it is generally necessary to peel off the native GaAs substrate of the LED thin film, transfer the LED thin film onto a new supporting substrate to make a vertical structure AlGaInP thin film LED chip, and provide a high-reflectivity mirror and a roughened surface.
Currently, the common reflective structure in the industry is that a low refractive index dielectric layer and a high reflectivity metal are combined as a reflector in a novel all-direction reflective (ODR) AlGaInP thin film LED chip to provide all-direction reflection (without being limited to light with near-normal incidence). The ODR structure is generally in SiO2The periodic conductive holes are made on the dielectric layer, and then a high light reflection metal layer of Ag, AuBe or AuZn alloy is evaporated on the basis of the periodic conductive holes.
Ag/SiO2The formed ODR structure can achieve high reflectivity, but cannot realize low ohmic contact, while AuBe (or AuZn)/SiO2The formed ODR structure can realize low ohmic contact but cannot ensure high reflectivity. Therefore, the conventional ODR structure formed by combining the low-refractive-index dielectric layer and the high-refractive-index metal layer cannot simultaneously ensure high reflectivity and low ohmic contact.
Disclosure of Invention
In view of the defects of the prior art, a first object of the present invention is to provide an AlGaInP LED chip with a reflector and a P-electrode independent of each other, which aims to improve the photoelectric conversion efficiency of the LED chip while taking into account high light reflectivity and low ohmic contact.
The second purpose of the invention is to provide a preparation method of an AlGaInP LED chip with a reflector and a P electrode which are mutually independent.
The first object of the present invention is achieved by:
an AlGaInP LED chip with mutually independent reflector and P electrode, which comprises the following components in sequence from bottom to top: the LED display device comprises a substrate, a bonding metal layer, a P electrode metal layer, a reflection metal layer, a low-refractive-index dielectric layer, a P-type doping layer, a light-emitting layer, a coarsening layer with a coarsened surface, an N-type doping layer and an N electrode, and is characterized in that: the reflecting metal layer and the low-refractive-index dielectric layer form an omnidirectional reflector, a plurality of P electrode holes are formed in the reflecting metal layer and the low-refractive-index dielectric layer, and the P electrode metal layer is contacted with the P type doped layer through the P electrode holes; within the wave band range of 600 nm-700 nm, the reflectivity of the reflecting metal layer is higher than that of the P electrode metal layer; the contact resistance of the P electrode metal layer and the P type doped layer is lower than that of the reflection metal layer and the P type doped layer; the N electrode consists of a bonding pad and a plurality of extension electrode wires, and a plurality of P electrode holes are arranged between the adjacent extension electrode wires.
The low-refractive-index dielectric layer is SiO2、SiNxSiON or MgF2Any one or more of them, and the thickness is 10 nm-1000 nm.
The reflecting metal layer is Ag or Au, and the thickness of the reflecting metal layer is 10nm-200 nm.
The P electrode metal layer is any one or more of NiAg, NiAu, AuBe or AuZn alloy, and the thickness is 10nm-200 nm.
The total area of the P electrode holes accounts for 1-10% of the surface area of the omnidirectional reflector.
The second object of the invention is achieved by:
a preparation method of an AlGaInP LED chip with a reflector and a P electrode which are mutually independent is characterized in that: the method comprises the following steps:
(1) epitaxially growing a corrosion cut-off layer, an N-type doping layer, a coarsening layer, a light emitting layer and a P-type doping layer on the temporary substrate GaAs;
(2) preparing a double-reflection electrode structure on the P-type doped layer; the preparation method of the double-reflection electrode structure comprises the following steps:
preparing a low-refractive-index dielectric layer on the P-type doped layer;
preparing a reflecting metal layer on the low-refractive-index dielectric layer;
photoetching and corroding a P electrode hole on the low-refractive-index dielectric layer and the reflecting metal layer;
preparing a P electrode metal layer on the basis;
(3) preparing a bonding metal layer, bonding the bonding metal layer with a permanent substrate, removing a temporary substrate, removing a corrosion stop layer, roughening, preparing a cutting channel and preparing an N electrode.
And preparing a reflecting metal layer and a P electrode metal layer by utilizing an electron beam evaporation mode or a sputtering mode.
The AlGaInP LED chip with the reflector and the P electrode mutually independent is characterized in that on the basis of a conventional AlGaInP thin film LED chip, a small hole is formed in an omnibearing reflector formed by a reflecting metal layer and a low-refractive-index dielectric layer, and the P electrode metal layer is contacted with a P-type doped layer through the small hole to form a P electrode hole; the invention can simultaneously give consideration to high light reflection and low ohmic contact, and finally improves the photoelectric conversion efficiency of the AlGaInP LED chip.
Drawings
Fig. 1 is a schematic diagram of an AlGaInP LED epitaxial structure, in which: 101-GaAs substrate, 102-corrosion cut-off layer, 103-N type doping layer, 104-coarsening layer, 105-light emitting layer and 106-P type doping layer;
fig. 2 is a schematic diagram of a conventional AlGaInP thin film LED chip structure, in which: 201-Si substrate, 202-bonding metal layer, 203-reflection metal layer, 204-low-refractive-index dielectric layer, 200-P surface reflection electrode layer (composed of metal reflection electrode layer 203 and low-refractive-index dielectric layer 204), 106-P type doping layer, 105-light emitting layer, 104-coarsening layer, 103-N type doping layer, 205-extension electrode, 206-bonding pad, 207-N electrode (composed of a plurality of extension electrodes 205 and bonding pad 206);
FIG. 3 is a diagram illustrating a low refractive index dielectric layer after fabrication in accordance with an embodiment of the present invention;
FIG. 4 is a diagram illustrating a structure of a reflective metal layer after being fabricated according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating a P-electrode hole after fabrication in accordance with an embodiment of the present invention;
FIG. 6 is a diagram illustrating a P-electrode metal layer after being formed during a manufacturing process according to an embodiment of the present invention;
fig. 7 is a schematic view of an AlGaInP LED chip according to an embodiment of the present invention.
Detailed Description
The invention is further illustrated by the following examples in connection with the accompanying drawings.
As shown in fig. 7, the AlGaInPLED chip provided by the invention sequentially comprises from bottom to top: 201-Si substrate, 202-bonding metal layer, 203-P electrode metal layer Ni/Ag, 301-reflection metal layer Ag, 204-low refractive index medium layer, 300-omnibearing reflector (composed of 301 reflection metal layer Ag and low refractive index medium layer 204), 302-P electrode hole, 106-P type doped layer, 105-light emitting layer, 104-coarsened layer, 103-N type doped layer, 205-extension electrode, 206-pad, 207-N electrode (composed of a plurality of extension electrodes 205 and pad 206).
A preparation method of an AlGaInP LED chip with a reflector and a P electrode mutually independent comprises the following steps:
(1) firstly, preparing an AlGaInP LED epitaxial material by using a conventional MOCVD growth method, and sequentially growing an etch stop layer 102, an N-type doped layer 103, a coarsened layer 104, a light-emitting layer 105 and a P-type doped layer 106 on a temporary substrate GaAs substrate 101 matched with AlGaInP lattice as shown in figure 1;
(2) as shown in FIG. 3, 100nm SiO is deposited on the P-doped layer 1062A low index dielectric layer 204;
(3) as shown in fig. 4, a 100nm reflective metal layer Ag 301 is prepared on the low refractive index dielectric layer 204;
(4) as shown in fig. 5, a P-electrode hole 302 is prepared by using photolithography and wet etching processes;
(5) as shown in fig. 6, a 100nm P electrode metal layer NiAg reflecting layer 203 is prepared, and the preparation of the mutually independent omnidirectional reflector and the P electrode is completed;
(6) then the temporary substrate GaAs substrate 101 and the permanent Si substrate 201 are bonded together through the bonding metal layer 202, the temporary substrate GaAs substrate 101 and the corrosion stop layer 102 are removed through a wet etching process, the coarsening layer 104 is coarsened, a cutting channel is prepared, and finally the N electrode 207-AuGeNi is prepared on the N-type doping layer 103, wherein the thickness is 2000nm-5000 nm. The LED chip structure is shown in fig. 7.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (6)
1. An AlGaInP LED chip with mutually independent reflector and P electrode, which comprises the following components in sequence from bottom to top: the LED chip comprises a substrate, a bonding metal layer, a P electrode metal layer, a reflection metal layer, a low-refractive-index dielectric layer, a P-type doping layer, a light-emitting layer, a coarsening layer with a coarsened surface, an N-type doping layer and an N electrode, and is characterized in that: the reflecting metal layer and the low-refractive-index dielectric layer form an omnidirectional reflector, a plurality of P electrode holes are formed in the reflecting metal layer and the low-refractive-index dielectric layer, and the P electrode metal layer is in contact with the P type doped layer through the P electrode holes; within the wave band range of 600 nm-700 nm, the reflectivity of the reflecting metal layer is higher than that of the P electrode metal layer; the contact resistance of the P electrode metal layer and the P type doped layer is lower than that of the reflection metal layer and the P type doped layer; the N electrode consists of a bonding pad and a plurality of extension electrode wires, and the P electrode hole is positioned between the adjacent extension electrode wires.
2. The AlGaInP LED chip as recited in claim 1, wherein the reflector and the P electrode are independent of each other: the low-refractive-index dielectric layer is SiO2、SiNxSiON or MgF2Any one or more of them, and the thickness is 10 nm-1000 nm.
3. The AlGaInP LED chip as recited in claim 1, wherein the reflector and the P electrode are independent of each other: the reflecting metal layer is Ag or Au, and the thickness of the reflecting metal layer is 10nm-200 nm.
4. The AlGaInP LED chip as recited in claim 1, wherein the reflector and the P electrode are independent of each other: the P electrode metal layer is any one or more of NiAg, NiAu, AuBe or AuZn alloy, and the thickness is 10nm-200 nm.
5. The AlGaInP LED chip as recited in claim 1, wherein the reflector and the P electrode are independent of each other: the total area of the P electrode holes accounts for 1-10% of the surface area of the omnidirectional reflector.
6. A preparation method of an AlGaInP LED chip with a reflector and a P electrode mutually independent is characterized in that: the method comprises the following steps:
(1) epitaxially growing a corrosion cut-off layer, an N-type doping layer, a coarsening layer, a light emitting layer and a P-type doping layer on the temporary substrate GaAs;
(2) an omnidirectional reflector and a P electrode structure are prepared on a P-type doped layer, and the preparation method comprises the following steps:
preparing a low-refractive-index dielectric layer on the P-type doped layer;
preparing a reflecting metal layer on the low-refractive-index dielectric layer;
photoetching and corroding a P electrode hole on the low-refractive-index dielectric layer and the reflecting metal layer;
preparing a P electrode metal layer on the basis;
(3) preparing a bonding metal layer, bonding the bonding metal layer with a permanent substrate, removing a temporary substrate, removing a corrosion stop layer, roughening, preparing a cutting channel and preparing an N electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010222574.9A CN111200045A (en) | 2020-03-26 | 2020-03-26 | AlGaInP LED chip with mutually independent reflector and P electrode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010222574.9A CN111200045A (en) | 2020-03-26 | 2020-03-26 | AlGaInP LED chip with mutually independent reflector and P electrode and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111200045A true CN111200045A (en) | 2020-05-26 |
Family
ID=70747567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010222574.9A Pending CN111200045A (en) | 2020-03-26 | 2020-03-26 | AlGaInP LED chip with mutually independent reflector and P electrode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111200045A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113299808A (en) * | 2021-07-05 | 2021-08-24 | 扬州乾照光电有限公司 | LED chip and preparation method thereof |
| CN114388675A (en) * | 2021-12-21 | 2022-04-22 | 南昌大学 | GaN-based micro LED chip and preparation method thereof |
| CN116759513A (en) * | 2023-08-14 | 2023-09-15 | 南昌凯捷半导体科技有限公司 | Mirror surface cladding structure reverse polarity red light LED chip and manufacturing method thereof |
-
2020
- 2020-03-26 CN CN202010222574.9A patent/CN111200045A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113299808A (en) * | 2021-07-05 | 2021-08-24 | 扬州乾照光电有限公司 | LED chip and preparation method thereof |
| CN113299808B (en) * | 2021-07-05 | 2022-05-17 | 扬州乾照光电有限公司 | LED chip and preparation method thereof |
| CN114388675A (en) * | 2021-12-21 | 2022-04-22 | 南昌大学 | GaN-based micro LED chip and preparation method thereof |
| CN114388675B (en) * | 2021-12-21 | 2024-04-16 | 南昌大学 | GaN-based miniature LED chip and preparation method thereof |
| CN116759513A (en) * | 2023-08-14 | 2023-09-15 | 南昌凯捷半导体科技有限公司 | Mirror surface cladding structure reverse polarity red light LED chip and manufacturing method thereof |
| CN116759513B (en) * | 2023-08-14 | 2023-12-01 | 南昌凯捷半导体科技有限公司 | Mirror surface cladding structure reverse polarity red light LED chip and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7294866B2 (en) | Flip-chip light-emitting device with micro-reflector | |
| JP5057398B2 (en) | Nitride semiconductor light emitting device and manufacturing method thereof | |
| JP5727320B2 (en) | AlGaInN-based LED with epitaxial layer | |
| US6323063B2 (en) | Forming LED having angled sides for increased side light extraction | |
| US7067340B1 (en) | Flip-chip light emitting diode and fabricating method thereof | |
| CN108922950B (en) | High-brightness flip LED chip and manufacturing method thereof | |
| US20150380609A1 (en) | Light Emitter With Coating Layers | |
| US7235820B2 (en) | Group III-nitride light emitting device | |
| WO2009119640A1 (en) | Semiconductor light emitting element and illuminating apparatus using the same | |
| CN111200045A (en) | AlGaInP LED chip with mutually independent reflector and P electrode and preparation method thereof | |
| CN111933765B (en) | Miniature light-emitting diode and manufacturing method thereof, and miniature LED display module and manufacturing method thereof | |
| WO2012040979A1 (en) | Light emitting device and manufacturing method thereof | |
| US20160099385A1 (en) | Method for Manufacturing Vertical Type Light Emitting Diode, Vertical Type Light Emitting Diode, Method for Manufacturing Ultraviolet Ray Light Emitting Diode, and Ultraviolet Ray Light Emitting Diode | |
| CN111433921B (en) | Light-emitting diode | |
| JP2007281037A (en) | Semiconductor light emitting element, and its manufacturing method | |
| WO2017198054A1 (en) | Flip light-emitting diode chip and manufacturing method therefor | |
| CN109273573B (en) | LED chip with vertical structure, reflecting electrode and preparation method thereof | |
| JP5512736B2 (en) | Nitride semiconductor light emitting device and manufacturing method thereof | |
| TW201505211A (en) | Light-emitting element | |
| CN114141925A (en) | Light emitting diode | |
| CN109378378B (en) | Vertical structure LED chip with reflecting electrode and preparation method thereof | |
| KR20080079844A (en) | Vertical light emitting diode and method of fabricating the same | |
| CN211980633U (en) | AlGaInP LED chip with independent reflector and P electrode | |
| KR100650990B1 (en) | GaN-based light emitting diode and Manufacturing method of the same | |
| CN112420891B (en) | Light emitting diode chip and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |