US20150380609A1

US20150380609A1 - Light Emitter With Coating Layers

Info

Publication number: US20150380609A1
Application number: US14/843,253
Authority: US
Inventors: Steven D. Lester
Original assignee: Toshiba Corp
Current assignee: Toshiba Corp
Priority date: 2005-12-06
Filing date: 2015-09-02
Publication date: 2015-12-31
Also published as: US20140124806A1; US20130228808A1; US8729580B2

Abstract

A laser apparatus may comprise: a substrate having a first surface and a second surface opposite to the first surface; a light emitting region formed on the first surface of the first substrate, the light emitting region including a p-type semiconductor layer and an n-type semiconductor layer; a p-contact layer formed on the p-type semiconductor layer; an n-contact layer formed on the n-type semiconductor layer; a sub-mount formed on the p-contact layer and the n-contact layer, the sub-mount including a first patterned dielectric coating layer formed on the p-contact layer and a reflector formed on the patterned dielectric coating layer.

Description

PRIORITY

This application is a divisional of U.S. application Ser. No. 12/607,053 filed on Oct. 27, 2009, which is a divisional of U.S. application Ser. No. 11/296,006 filed on Dec. 6, 2005, and claims priority therefrom.

CROSS-REFERENCE TO RELATED DOCUMENTS

The present invention is related to application Ser. No. 12/607,053, “Light Emitter with Metal-oxide Coating,” Ser. No. 11/296,006, “Light Emitter with Metal-oxide Coating” and Ser. No. 11/378,763, “Highly Reflective Mounting Arrangement for LEDs”, assigned to the same assignee, incorporated herein in their entirety by reference.

FIELD OF INVENTION

This invention relates generally to light emitting devices and more particularly to new combinations for enhancing their light output.

BACKGROUND OF INVENTION

Light emitting devices (LEDs) are an important class of solid state devices that convert electric energy to light and commonly comprise an active layer of semiconductor material sandwiched between additional layers. As the quality of semiconductor materials have improved, the efficiency of LEDs has also improved. Commercially-available LEDs are being made from alloys of indium, aluminum, and gallium with nitrogen (AlInGaN). These alloys make possible LEDs which operate in the ultra-violet to green spectral regions. However, the efficiency of LEDs is limited by their inability to couple all of the light that is generated by an active layer out of the LED chip. When an LED is energized, light emitting from its active layer (in all directions) reaches the LED surfaces at many different angles. Typical semiconductor materials have a high index of refraction compared to ambient air (n=1.0) or encapsulating epoxy (n≈1.5). According to Snell's law, light traveling from a material having an index of refraction, n₁, to a material with a lower index of refraction, n₂, at an angle less than a certain critical angle θ_crelative to the surface normal direction will cross to the lower index region, where
θ_c=sin⁻¹(n ₂ /n ₁) (1)
Light that reaches the semiconductor surface at angles greater than θ_cwill experience total internal reflection. This light is reflected back into the LED chip where it can be absorbed within the chip or in metal contact layers that are attached to the chip. For conventional LEDs, the vast majority of light generated within the structure suffers total internal reflection before escaping from the semiconductor chip. In the case of conventional GaN-based LEDs on sapphire substrates ˜70% of the emitted light is trapped between the sapphire substrate and the outer surface of the GaN. This light is repeatedly reflected, greatly increasing its chance for reabsorption and loss.
Several techniques have been described to improve light extraction from LEDs. Providing the device with reflective contacts is one such technique. This improves LED efficiency because light that is trapped within the structure and is incident on the contact metals will be reflected back into the device rather than being absorbed. This allows the light to have another opportunity to escape the chip the next time it is incident on the LED surface. While reflective contacts improve light extraction, conventional LEDs still suffer from significant absorption losses. Roughening the top surface is another technique to improve light extraction. Roughening scatters, or sometimes randomizes, the angle of reflected light so that trapped light is redirected. This prevents light from being repeatedly reflected by parallel interfaces. Some of the scattered light then has an opportunity to strike a surface within the critical angle for internal reflection before being absorbed. Typical semiconductor layers are thin so only fine-scale roughening is usually possible. Also, roughened surfaces can cause other problems with the LED fabrication process. For example, contacts to roughened surfaces can be problematic. Also, roughened surfaces can cause it to be difficult to align photomasks to the wafer. And they make it difficult for the pattern recognition equipment that are used to bond and inspect the wafers to work properly. Therefore another technique to redirect trapped light is desirable. Another technique to scatter trapped light is to provide a rough interface between the GaN and the underlying substrate. This can be done by patterning and roughening the substrate prior to the growth of the semiconductor layers. This technique is effective at improving light extraction; however, the textured surface of the substrate affects the subsequent growth of the semiconductor layers. The quality of the semiconductor layers is often adversely affected, and the reproducibility of the growth is poor.
Additional methods of improving light output efficiency are reviewed in U.S. Pat. No. 6,657,236 which is included herein in its entirety by reference. U.S. Pat. No. 6,657,236 and U.S. Pat. No. 6,821,804 teach another method requiring a first spreading layer of a n type doped AlInGaN based material; a second spreading layer is preferably a thin, semi-transparent metal such as Pd, Pt, Pd/Au, Ni/Au, NiO/Au or some combination thereof deposited on, preferably, a p-type AlInGaN surface. Light extraction structures are then fashioned as arrays of light extraction elements or disperser layers. The light extraction elements are formed from a material having an index of refraction higher than the devices encapsulating material.
U.S. Pat. No. 6,831,302 teaches a structure comprising a multi-layer stack of materials, a layer of reflective material capable of reflecting at least about 50% of light impinging thereon and wherein a surface of an n-doped material, such as n-GaN, has a dielectric function that varies spatially according to some pattern. U.S. 2005/0227379 teaches shaping a surface of a semiconductor layer with a laser to improve the light extraction efficiency. Alternatively a substrate may contain three dimensional geometric light extraction patterns or a light emitting element on a substrate contains at least one layer with a pattern to produce light extraction features.
All of the prior art suffer from marginal improvement of light extraction efficiency or high manufacturing cost or both. A simple solution is needed which improves the overall light delivered from a light emitting device at a low cost.

SUMMARY OF THE INVENTION

One object of the present invention is to provide a low cost device structure with improved light extraction efficiency. In contrast to the prior art no changes are made in the basic semiconductor portion of a light emitting device, so that virtually all of current light emitting diodes or other light emitting device structures can employ the benefits of this invention. The invention improves light extraction from LEDs by providing a medium, as a coating material, that light can enter easily and can propagate through with minimum attenuation. Surfaces of the medium may be configured to facilitate light exiting into air or an encapsulant. Additionally, the invention improves light extraction by greatly increasing the surface area of the device.
The present invention provides for a medium, as a dielectric coating or material within a given index of refraction and light extinction coefficient range, to be placed on the surface, or surfaces, of a solid state light-emitting device. When the refractive index of the dielectric coating is close to or higher than that of the light emitting surfaces then there are only minimal Fresnel reflections at the light emitting/dielectric interfaces. Also, the critical angle for light to enter the dielectric coating will be close to 90 degrees; thus, a very high percentage of the light that is incident from the semiconductor layers can enter the dielectric coating layers. If the dielectric coating is made to have very low loss then light can travel through the layer without appreciable attenuation. Further, if the dielectric coating is rough or appropriately patterned the surface area for light emission is increased. Since the dielectric coating can be thick compared to many semiconductor layers, larger-scale patterns can be formed in them compared to what is typically possible in semiconductors. This provides a greater opportunity for the photons to strike a surface where they may be extracted rather than being reflected back into lossy semiconductor or metal layers. One example of a material with an index of refraction greater than GaN is silicon carbide, which can be deposited by plasma-enhanced chemical vapor deposition, for example.
In one embodiment the dielectric medium is added to the top layer of the structure of a light emitting device to improve the extraction of light from the device. The coating has low optical loss and an index of refraction about 2 or greater, preferably having an index of refraction close to or greater than the index of refraction of the uppermost semiconductor layer, for instance, GaN in an AlInGaN based materials system. The coating is made from one or combinations of a group of metal oxides comprising Ta₂O₅, Nb₂O₅, TiO₂; certain other materials are also acceptable such as silicon carbide and GaN based solid solutions. The coating has a thickness ranging from about 0.01 to about 10 microns. In alternative embodiments the surface of the coating material may be textured or shaped or patterned to increase the surface area, improve light extraction and to engineer the directionality of light escaping the layer. The coating may be applied directly to a primary surface or multiple surfaces of a light emitting device and may be applied over a contact electrode pattern. In alternative embodiments a coating layer is comprised of more than one coating layer, designed for specific optical functions such as improving or impeding the transmission of specific wavelength ranges or gradually diminishing the refractive index of a composite film as a films outer surface is approached. In these embodiments a coating may comprise additional materials such as SiO₂in order to achieve specific optical properties of a multilayer coating. The coating layer may replace a passivation or protective layer on the device or function as one. The coating layer may be crystalline or not.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic of one embodiment of the invention with a metal-oxide coating layer on top of a light emitting device.

FIG. 2 is a schematic of another embodiment of the invention with a back reflector.

FIG. 3 is a schematic of another embodiment of the invention with a coating on a transparent metallic layer.

FIG. 4 is a schematic of another embodiment of the invention with a reflector layer over a substrate.

FIG. 5 is a schematic of another embodiment of the invention with a reflector structure over a substrate.

FIG. 6 is a schematic of another embodiment of the invention with a flip chip design.

FIG. 7 is a schematic of another embodiment of the invention with a flip chip design with a submount substrate.

FIGS. 8 a-8 d are schematics of alternative patterns for a metal-oxide coating.

FIG. 9 is a schematic of another embodiment of a metal-oxide coating with a photonic crystal pattern.

DETAILED DESCRIPTION OF EMBODIMENTS

FIG. 1 shows a schematic view of one embodiment of the invented light emitting structure 100 comprising a substrate portion 101, a light emitting device portion 110 and a metal-oxide coating portion 120. As used herein a substrate or submount portion provides at least a mechanical support for a light emitting device portion and metal-oxide coating portion. A substrate is chosen from a group comprising Al₂O₃, Si, SiC, AlInGaN based materials, metals, ceramics and glasses; these materials may be single crystal or not. A submount is chosen based on manufacturing convenience; typically a submount is chosen from a group comprising Al₂O₃, Si, SiC, metals, ceramics, plastics and glasses. As used herein a light emitting device portion is chosen from a group comprising light emitting diodes, light emitting heterojunctions, light emitting quantum well structures and other solid state devices capable of emitting light. As used herein a metal-oxide coating portion is chosen from a group comprising metal oxides, silicon carbide, gallium nitride based materials and other materials of appropriate optical and manufacturing characteristics. As used herein, preferably, a metal-oxide coating portion has an index of refraction of about 2.0 or greater and transmits a high percentage of radiation passing through it; the thickness of a coating may be from about 10 nm to more than 10 microns depending on device requirements. Preferably, the coating's light extinction coefficient (the complex portion of the index of refraction) is about 0.2 or less, preferably 0.1 or less. Preferably a metal-oxide coating portion is chosen from a group comprising niobium pentoxide (Nb₂O₅), titanium dioxide (TiO₂), tantalum pentoxide (Ta₂O₅), silicon carbide (SiC) and gallium nitride (GaN). A metal-oxide coating also has a dielectric property; the term dielectric layer is used interchangeably herein.
Propagation of light within a specific material is characterized by the material's complex index of refraction, defined as:
n*=n−iκ (2)
Here, n is the refractive index indicating the phase velocity relative to the speed of light in vacuum, while κ is called the light extinction coefficient or optical loss factor, which indicates the amount of absorption loss when the electromagnetic wave propagates through the material. Both n and K are dependent on the wavelength of the radiation; values for different materials are readily available. In a preferred embodiment of the present invention, the n value of the metal-oxide coating is close to or greater than the n of GaN, ˜2.45. The proximity of the refractive indices insures very little reflection of light occurs as light passes from a GaN layer and to a metal oxide layer. The K value, a measure of absorption, should be as small as possible, preferably below 0.2 and more preferably below 0.1, so that light can travel within the coating with minimal attenuation.
When a dielectric layer has an index of refraction, n, that is somewhat less than that of a semiconductor then the critical angle for internal reflection of light incident from a semiconductor will be very large. The result is that a vast majority of light incident on a dielectric layer from a GaN based LED will be transmitted into the dielectric layer. Niobium pentoxide (Nb₂O₅), titanium dioxide (TiO₂), and tantalum pentoxide (Ta₂O₅) are examples of such dielectric layer materials. These dielectrics have indices of refraction of approximately 2.39, 2.46, and 2.08, respectively, compared to GaN which has an index of refraction of approximately 2.4. Dielectric coatings can be formed readily using sputtering, reactive sputtering, ion-beam assisted sputtering, e-beam evaporation, or ion-assisted, e-beam evaporation. Other deposition techniques such as chemical vapor deposition, PECVD, MOCVD, ALD and others known to one knowledgeable in the art are considered equivalent embodiments.
Another advantage of a preferred dielectric coating is that it can be deposited in relatively thick layers and have extremely low optical losses. The thickness of a film can be on the order of the thickness of the semiconductor layers, approximately 3 to 4 microns. The limit on thickness is only limited by deposition time and by built up stresses in the films. Since a dielectric layer can be made thick it can be patterned to have textures or shapes with dimensions of several microns. This is an advantage compared to texturing semiconductor layers since larger structures cannot be formed; additionally semiconductor layers are expensive to form. Also, texturing or shaping a coating layer provides more surface area for light emission, increasing the light extraction efficiency. A coated dielectric layer can also be easily patterned into lenses or other specific shapes intended to maximize light extraction or reflect light in particular directions.
Coated dielectric layers can be combined with textured semiconductor surfaces. Also when there is a good index match between a semiconductor active or cap layers and a dielectric then a semiconductor surface can be smooth and not textured and an outer surface of a dielectric coating can be textured or otherwise patterned. This is an advantage because it allows for processing of smooth wafers which are less costly to manufacture.
FIG. 2 is a schematic of another embodiment of the invention; light emitting structure 200 comprises a back reflector 230 on a transmissive substrate 102, such as sapphire or silicon carbide, with one or more n-type layers 280, one or more p-type layers 270 and, optionally, additional intervening layers (not shown), a transmissive contact layer 260, such as ITO, n-layer contact 250, p-layer contact 240 and metal-oxide coating 120. One or more n-type layers 280, one or more p-type layers 270 and, optionally, additional intervening layers (not shown), comprise an active region of an LED structure. Alternative LED structures may be a simple p-n junction diode or double heterojunction structure or multiple quantum well structure or others familiar to one knowledgeable in the art. An embodiment of a light emitting portion in a AlInGaN material system based light emitting device comprises a buffer layer, one or more first cap layers at least one of which is a first conductivity type, an active region comprising one or more layers, one or more second cap layers at least one of which is a second conductivity type, one or more contact layers and one or more electrode layers. For instance, one embodiment of a light emitting portion comprises an InGaN nucleation and/or buffer layers, followed by GaN and/or n-type GaN cap layers, followed by an active region comprising multiple quantum well active layers of InGaN type and barrier layers of n type GaN, followed by p-type AlGaN type cap layers, followed by n type GaN and/or InGaN cap layers, followed by one or more electrode layers. An electrode layer may be of aluminum, Ti/Al, Cr/Al, Ni/Au, Ni/Pd, Ni/Pt, or other combinations well known in the art. The preceding descriptions of various active regions apply equally to active regions 350, 450, 550, 650 and 750. In a FIG. 2 embodiment a back reflector 230 may be of aluminum or silver or multiple reflective layers to reflect light back into a LED structure and recapture its utility. Transmissive contact layer 260 may be of indium tin oxide; alternatively, a transmissive contact layer may be of nickel/gold (Ni/Au) composition or other alloys having high light transmission.
FIG. 3 is a schematic of another embodiment of the invention with a metal-oxide coating 120 on a transparent metallic layer 261 which is already textured or roughened. Transparent substrate 103 may be sapphire or silicon carbide. A roughened transparent metallic layer provides for additional angles of incidence for entering and departing light; in combination with metal-oxide coating 120 of a predetermined index of refraction light extraction efficiency is increased.
FIG. 4 is a schematic of another embodiment of the invention with a reflector layer 410 over a substrate serving as a mechanical support. In this embodiment a light emitting device portion 450, comprising, at least, one or more n-type layers 280, one or more p-type layers 270 and, optionally, additional intervening layers (not shown), is manufactured on another substrate, removed and attached to substrate 104. Substrate 104 may comprise one or more layers such as reflector 410 and conductivity layer 262; optionally, reflector layer 410, conductivity layer 262, metal traces 420 and 421 and metal-oxide coating 120 may be formed on light emitting device portion 450 prior to separation from an original substrate.
One technique for separating a light emitting device portion from its original substrate is termed “laser liftoff”. This technique is described in U.S. Pat. No. 6,071,795 and “Laser Liftoff of Gallium Nitride from Sapphire Substrates”, Sands, T., et al.; Nov. 18, 2005: http://www.ucop.edu/research/micro/98_—99/98_—133.pdf. An alternative description is provided by Ambacher, O., et al., “Laser Liftoff and Laser Patterning of Large Free-standing GaN Substrates”; Mat. Res. Soc. Symp., Vol. 617, .COPYRGT. 2000 Materials Research Society. All three publications are included in their entirety herein by reference.
FIG. 5 is a schematic of another embodiment of the invention similar to FIG. 4. A reflector structure 411 is formed over a patterned metal-oxide coating 121 on substrate 105. As in the previous embodiment a laser liftoff technique is used to transfer active light emitting region 550 to substrate structure 105. Substrate 105 may comprise one or more layers such as reflector 411 and metal-oxide layer 121; optionally, conductivity layer 262 and metal-oxide coating 120 may be formed on light emitting device portion 450 prior to separation from an original substrate or after combination with substrate 105 comprising reflector 411 and coating 121. Reflector structure 411 over a patterned metal-oxide coating 121 on substrate 105 may take on various configurations and shapes; only one example is shown. One knowledgeable in the art of silicon on insulator wafer processing is familiar with alternative methods for transferring an active layer(s) to another substrate.
FIG. 6 is a schematic of another embodiment of the invention with a flip chip design. Light emitting device 600 comprises metal-oxide coating portion 622, transmissive substrate 106, for instance sapphire, active region 650, n contact 651, p contact 641 and submount 601. N contact 651, p contact 641 and submount 601 are in mechanical contact and electrical communication. Submount 601 contains electrical circuits, not shown, to provide electrical connection to external circuits or packages. Optionally, submount 601 may comprise additional layers such as reflector 411 and metal-oxide coating 121 to enhance reflection of light back through layers 452 and 106 while maintaining mechanical contact and electrical communication to contacts 651 and 641.
FIG. 7 is a schematic of another embodiment of the invention with a flip chip design with a submount substrate 701 and the original substrate removed. Light emitting device 700 comprises metal-oxide coating portion 722, active region 750, n contact 751, p contact 741 and submount 701. N contact 751, p contact 741 and submount 701 are in mechanical contact and electrical communication. Submount 701 contains electrical circuits, not shown, to provide electrical connection to external circuits or packages. Optionally, submount 701 may comprise additional layers such as reflector 411 and metal-oxide coating 121 to enhance reflection of light back through active region 750 while maintaining mechanical contact and electrical communication to contacts 751 and 741.
FIGS. 8 a-8 d are schematics of alternative patterns and shapes for a metal-oxide coating. Patterns and shapes for metal- oxide coating layer 801, 802, 803, and 804 are chosen from a group comprising ribs, cylinders, slots, polygon shaped ribs, triangular shaped ridges, hemispherical shaped mounds, horizontal cylindrical shaped ribs, cylinders, ellipsoids, hemispheres, rectilinear trenches or solids, cones, angled cylinders, angled hemispheres, angled ellipsoids, angled rectilinear trenches or solids and angled cones. FIG. 9 is a schematic of an alternative embodiment of a metal-oxide coating with a pattern or shape that also functions as a photonic crystal lattice 901. Not shown in FIGS. 8 and 9 are substrates or submounts. Patterns and shapes for elements for metal- oxide coating layer 801, 802, 803, 804 and 901 have a geometrical shape chosen from the group comprising cylinders, ellipsoids, hemispheres, rectilinear trenches or solids, cones, angled cylinders, angled hemispheres, angled ellipsoids, angled rectilinear trenches or solids and angled cones and wherein element to element spacing may be uniform or not. In alternative embodiments, a metal-oxide coating layer may comprise one or more metal-oxide layers of different compositions resulting in one or more different refractive indices in the one or more layers. Non-stoichiometric compositions of metal-oxide materials may be incorporated to achieve varying indices of refraction and extinction coefficients. In embodiments where multiple layers are employed a layer of silicon dioxide integral to other layers may be of utility to enable additional light transmissive or inhibiting capabilities of a multilayer coating. Feature sizes of patterns and photonic crystal shapes may vary from about 10 nm to more than several microns depending on a requirement.
In some embodiments a light emitting device comprises a first substrate portion; a first coating layer portion in contact with the substrate portion wherein a reflective layer structure is integral to the first coating layer; a light emitting portion in contact with the first coating layer portion; and a second coating layer portion in contact with the light emitting portion wherein at least one of the first and second coating layer portions has a continuous, three dimensional pattern chosen from a group consisting of ribs, cylinders, slots, polygon shaped ribs, triangular shaped ridges, hemispherical shaped mounds, horizontal cylindrical shaped ribs, cylinders, ellipsoids, hemispheres, rectilinear trenches, rectilinear solids, cones, angled cylinders, angled hemispheres, angled ellipsoids, angled rectilinear trenches, angled solids and angled cones and wherein element to element spacing may be uniform or not and an index of refraction greater than about 2 and an optical loss factor less than about 0.2; optionally, a light emitting device further comprises a second substrate in contact with said second coating layer portion; optionally, a light emitting device further comprises a first cap layer of a first conductivity type adjacent to said substrate portion; an active region comprising one or more layers separated from said substrate portion by the first cap layer; a second cap layer of a second conductivity type; one or more contact layers in contact with the active region through the second cap layers; and wherein said active region is of the AlInGaN material system; optionally, a light emitting device comprises a first and second coating layer portions chosen from a group comprising metal oxides, silicon carbide, GaN, Ta₂O₅, Nb₂O₅, TiO₂, AlInGaN based solid solutions, and their non-stoichiometric mixtures; optionally, a light emitting device further comprises a second coating layer portion comprising one or more coating layers wherein at least the first of the one or more coating layers of said second coating layer has an index of refraction greater than 2 and an optical loss factor less than 0.2; optionally, a light emitting device further comprises a first and second substrate portions chosen from a group comprising sapphire, silicon carbide, GaN, silicon, glass, ceramic, plastic and metal.
In some embodiments a light emitting device comprises a first substrate portion; a reflective layer in contact with the first substrate portion; a transparent conductive layer in contact with the reflective layer; a light emitting portion comprising at least two layers in contact with the transparent conductive layer; and one or more coating layers adjacent the light emitting portion having a three dimensional pattern chosen from a group consisting of ribs, cylinders, slots, polygon shaped ribs, triangular shaped ridges, hemispherical shaped mounds, horizontal cylindrical shaped ribs, cylinders, ellipsoids, hemispheres, rectilinear trenches, rectilinear solids, cones, angled cylinders, angled hemispheres, angled ellipsoids, angled rectilinear trenches, angled solids and angled cones and wherein element to element spacing may be uniform or not wherein at least the first coating layer of the one or more coating layers has an index of refraction greater than 2 and an optical loss factor less than 0.2; optionally, a light emitting device further comprises a second substrate in contact with one of said one or more coating layers; optionally, a light emitting device further comprises a first cap layer of a first conductivity type adjacent to said substrate portion; an active region comprising one or more layers separated from said substrate portion by the first cap layer; a second cap layer of a second conductivity type; one or more contact layers in contact with the active region through the second cap layer; and one or more electrode layers in contact with one of the one or more contact layers; wherein said active region is of the AlInGaN material system; optionally, a light emitting device further comprises one or more coating layers are chosen from a group comprising metal oxides, silicon carbide, GaN, Ta₂O₅, Nb₂O₅, TiO₂, AlInGaN based solid solutions, and their non-stoichiometric mixtures; optionally, a light emitting device further comprises a first and second substrate portions chosen from a group comprising sapphire, silicon carbide, GaN, silicon, glass, ceramic, plastic and metal.
The instant invention discloses a method of improving light extraction efficiency of a light emitting device comprising the steps:
choosing a composition of one or more coating layers wherein at least the first coating layer has an index of refraction greater than 2 and an optical loss factor less than 0.2;
depositing the one or more coating layers on a light emitting device; and
patterning the one or more coating layers with a three dimensional pattern chosen from a group consisting of ribs, cylinders, slots, polygon shaped ribs, triangular shaped ridges, hemispherical shaped mounds, horizontal cylindrical shaped ribs, cylinders, ellipsoids, hemispheres, rectilinear trenches, rectilinear solids, cones, angled cylinders, angled hemispheres, angled ellipsoids, angled rectilinear trenches, angled solids and angled cones and wherein element to element spacing may be uniform or not wherein at least the first coating layer of the one or more coating layers has an index of refraction greater than 2 and an optical loss factor less than 0.2; optionally, a light emitting device of the disclosed method further comprises one or more coating layers chosen from a group comprising metal oxides, silicon carbide, GaN, Ta₂O₅, Nb₂O₅, TiO₂, AlInGaN based solid solutions, and their non-stoichiometric mixtures.
Foregoing described embodiments of the invention are provided as illustrations and descriptions. They are not intended to limit the invention to precise form described. In particular, it is contemplated that functional implementation of invention described herein may be implemented equivalently. Alternative construction techniques and processes are apparent to one knowledgeable with integrated circuit and MEMS technology. Other variations and embodiments are possible in light of above teachings, and it is thus intended that the scope of invention not be limited by this Detailed Description, but rather by Claims following.

Claims

What is claimed is:

1. A light emitting device comprising:

a substrate having a first surface and a second surface opposite to the first surface;

a light emitting region formed on the first surface of the first substrate, the light emitting region including a p-type semiconductor layer and an n-type semiconductor layer;

a p-contact layer formed on the p-type semiconductor layer;

an n-contact layer formed on the n-type semiconductor layer;

a sub-mount formed on the p-contact layer and the n-contact layer, the sub-mount including a first patterned dielectric coating layer formed on the p-contact layer and a reflector formed on the patterned dielectric coating layer.

2. The light emitting device of claim 1, wherein the first patterned dielectric coating layer comprises metal-oxide.

3. The light emitting device of claim 2, wherein the first patterned dielectric coating layer comprises a material chosen from a group consisting of Ta₂O₅, Nb₂O₅and TiO₂.

4. The light emitting device of claim 3, wherein the first patterned dielectric coating layer comprises Nb₂O₅.

5. The light emitting device of claim 1, wherein the first patterned dielectric coating layer comprises a material chosen from a group consisting of metal oxide, silicon carbide, GaN, Ta₂O₅, Nb₂O₅, TiO₂, AlInGaN based solid solutions.

6. The light emitting device of claim 1, wherein the light emitting region comprises:

an n-type semiconductor cap layer;

an active region of an AiInGaN material system, the n-type semiconductor cap layer formed between the active region and the substrate; and

a p-type semiconductor cap layer.

7. The light emitting device of claim 1, further comprising:

a second patterned dielectric coating layer formed on the second surface of the substrate, the second patterned dielectric coating layer having a patterned surface constituting a surface area for light emission.

8. The light emitting device of claim 7, wherein the patterned surface of the second patterned dielectric coating layer is continuously patterned.

9. The light emitting device of claim 8, wherein the second patterned dielectric coating layer comprises metal-oxide.

10. The light emitting device of claim 8, wherein the second patterned dielectric coating layer comprises a material chosen from a group consisting of metal oxide, silicon carbide, GaN, Ta₂O₅, Nb₂O₅, TiO₂, AlInGaN based solid solutions.