CN101197417A - Gallium nitride based light emitting diode chip and production method thereof - Google Patents
Gallium nitride based light emitting diode chip and production method thereof Download PDFInfo
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- CN101197417A CN101197417A CNA2008100557109A CN200810055710A CN101197417A CN 101197417 A CN101197417 A CN 101197417A CN A2008100557109 A CNA2008100557109 A CN A2008100557109A CN 200810055710 A CN200810055710 A CN 200810055710A CN 101197417 A CN101197417 A CN 101197417A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 229910002601 GaN Inorganic materials 0.000 title claims description 61
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 57
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims description 76
- 238000000576 coating method Methods 0.000 claims description 76
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 238000001704 evaporation Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 239000004408 titanium dioxide Substances 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 150000004767 nitrides Chemical class 0.000 abstract 3
- 230000005855 radiation Effects 0.000 abstract 2
- 238000009713 electroplating Methods 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 239000000428 dust Substances 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 229910010413 TiO 2 Inorganic materials 0.000 description 11
- 238000007796 conventional method Methods 0.000 description 10
- 238000002310 reflectometry Methods 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004038 photonic crystal Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
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Abstract
The invention provides a nitride-based light emitting diodes chip, comprising a substrate, and a reflective film vapor plated on the bottom surface of the substrate; the reflective film comprises a dielectric reflective film and a metal reflective film, the dielectric reflective film vapor plated between the substrate and the metal reflective film; The invention also provides a manufacture method for the nitride-based light emitting diodes chip, comprising the procedures of thinning the substrate of the chip, vapor plating the reflective film on the bottom surface of the substrate, and improvinglight extraction efficiency of the nitride-based light emitting diodes chip. The manufacture method can also include the following procedures of: vapor plating heat radiation surface on the bottom surface of the reflective film, or electroplating heat radiation surface around the substrate and the reflective film as well as on the bottom surface of the reflective film, to improve the stability of the light emitting diode and eventually improve the external luminescent efficiency.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of gallium nitride LED chip and preparation method thereof.
Background technology
Problem below gallium nitride LED chip generally can face in making and use: the light taking-up efficient of gallium nitride LED chip is low, takes out the reason that efficient mainly contains two aspects and influence light: a kind of is owing to the absorption of reflecting material to light; Another kind is that light produces total reflection when passing different medium.
For solving reflecting material this problem of absorption to light, conventional method is, as shown in Figure 1, by photoetching, etching, peel off, the semiconductor microactuator process technology of a series of routines such as evaporation, alloy is made into the gallium nitride-based epitaxial sheet blue light high power gallium nitride LED chip of 1000 μ m * 1000 μ m, and the Sapphire Substrate 1 of gallium nitride LED chip is thinned to 80～100 μ m, then at its substrate bottom surface evaporation metal reflectance coating 8.The structure of the chip that this conventional method is made comprises Sapphire Substrate 1, N type GaN layer 2, active layer 3, P type GaN layer 4, transparency conducting layer 5, P electrode 6, N electrode 7 and metallic reflective coating 8, this metallic reflective coating 8 is generally made by argent or metallic aluminium, the model of producing with Hitachi, Ltd is the reflectivity that the spectrometer of HITACHI U-4001 is tested this reflectance coating, its reflectivity had only for about 73% (as shown in Figure 7), still can not solve light this problem of absorbed that is reflected well, thereby its light taking-up efficient is lower, finally cause the external light emission efficiency of gallium nitride based light emitting diode also lower, as shown in figure 10, curve 1 is the Iv-I curve of the powerful gallium nitride based light emitting diode of blue light of the 1000 μ m * 1000 μ m of conventional method making, when injection running current I was 0.35A, its luminous intensity Iv only was about 750mcd.
Summary of the invention
In view of this, in order to solve that the light that exists in the prior art is reflected absorbed and the low problem of external light emission efficiency that causes gallium nitride based light emitting diode, main purpose of the present invention is to provide a kind of gallium nitride LED chip and preparation method thereof, take out efficient with the light that improves gallium nitride LED chip, finally improve the external light emission efficiency of gallium nitride based light emitting diode.
For achieving the above object, technical scheme of the present invention is achieved in that
This gallium nitride LED chip, comprise substrate, the thickness of this substrate is 60～130 μ m, the bottom surface of substrate is provided with reflectance coating, this reflectance coating comprises dielectric reflectance coating and metallic reflective coating, this dielectric reflectance coating is located at the bottom surface of described substrate, and this metallic reflective coating is located at the bottom surface of dielectric reflectance coating.
Wherein, this dielectric reflectance coating is omnidirectional reflection or distributed bragg reflector mirror, and metallic reflective coating is an aluminium.
Omnidirectional reflection, distributed bragg reflector mirror all are the combination of the titania/silica that is arranged alternately successively in the substrate bottom surface.The number of plies of titanium dioxide, silicon dioxide all is 3 layers in the omnidirectional reflection, and the thickness of titanium dioxide, silicon dioxide all is 40～60 dusts; The number of plies of titanium dioxide is 4 layers in the distributed bragg reflector mirror, and the number of plies of silicon dioxide is 3 layers.
The thickness of substrate can be 80～105 μ m, and the thickness of aluminium can be 1000～5000 dusts.
In addition, the bottom surface of reflectance coating is provided with heat dissipating layer, and this heat dissipating layer is copper or gold-tin alloy, and its thickness is 10000～30000 dusts.
In addition, around substrate and the reflectance coating and the bottom surface of metallic reflective coating also can be provided with heat dissipating layer, and this heat dissipating layer is a copper, and its thickness is 100～200 μ m.
Make the method for above-mentioned gallium nitride LED chip, comprise the steps:
(a) the gallium nitride-based epitaxial sheet is made into gallium nitride LED chip, and is 60～130 μ m substrate thinning to the thickness of this chip;
(b) in the bottom surface of above-mentioned substrate the dielectric reflectance coating is set, metallic reflective coating is set in the bottom surface of dielectric reflectance coating.
Wherein, the dielectric reflectance coating is arranged on the bottom surface of substrate in the mode of evaporation, and metallic reflective coating is arranged on the bottom surface of dielectric reflectance coating in the mode of evaporation.
Said method also can comprise the steps:
(c) at the bottom surface of above-mentioned reflectance coating evaporation heat dissipating layer.
Said method also can comprise the steps:
(c) around above-mentioned substrate and reflectance coating and the bottom surface of reflectance coating electroplate heat dissipating layer.
Known, 1-D photon crystal is made up of two kinds of different materials arranged in alternating of refraction coefficient, and the most fundamental characteristic of photonic crystal is to have photonic bandgap, and the light that frequency drops in the energy gap scope can not see through this photonic crystal.Based on this feature of photonic crystal, the present invention has the reflectance coating of omnidirectional reflection or has the reflectance coating of distributed bragg reflector mirror at the bottom surface of substrate evaporation, reflectance coating with omnidirectional reflection structure can make the most light in the visible-range that higher reflectivity is all arranged, and the reflectance coating with distributed bragg reflector mirror structure can make the light in the particular range of wavelengths have high reflectivity.
Compared with prior art, gallium nitride LED chip of the present invention, owing to adopted the combination of dielectric reflectance coating and metallic reflective coating, can reduce the absorption of reflecting material better to light, thereby make light through taking out from the surface of gallium nitride LED chip more after the reflection of reflectance coating, thereby the light that has improved chip takes out efficient, has also promptly promoted the external light emission efficiency of light-emitting diode.In addition, the heat energy that the heat dissipating layer with high coefficient of heat transfer that the present invention makes not only can produce light-emitting diode is effectively derived, make the junction temperature of its PN junction be unlikely to too high, promoted the stability of light-emitting diode, and effective derivation of heat energy can also promote the conversion of its internal quantum simultaneously, thereby further promoted its external light emission efficiency.
Description of drawings
Fig. 1 is the structural representation of the light-emitting diode chip for backlight unit with metallic reflective coating of conventional method making;
Fig. 2 is the making flow chart of gallium nitride LED chip of the present invention;
Fig. 3 is the structural representation of gallium nitride LED chip of the present invention;
Fig. 4 is the structural representation of gallium nitride LED chip of the present invention;
Fig. 5 is the structural representation of gallium nitride LED chip of the present invention;
Fig. 6 is the structural representation of gallium nitride LED chip of the present invention;
Fig. 7 is the reflectance curve figure of the metallic reflective coating of conventional method making;
Fig. 8 is the reflectance curve figure of the reflectance coating with omnidirectional reflection of the chip of the present invention's making;
Fig. 9 is the reflectance curve figure of the reflectance coating with distributed bragg reflector mirror of the chip of the present invention's making;
The gallium nitride based light emitting diode that Figure 10 makes for the present invention and the I of the gallium nitride based light emitting diode of conventional method making
V-I curve comparison diagram.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is done detailed explanation.
Gallium nitride LED chip of the present invention comprises:
Substrate, the bottom surface evaporation of substrate has reflectance coating, and this reflectance coating comprises dielectric reflectance coating, metallic reflective coating.The dielectric reflectance coating is omnidirectional reflection or distributed bragg reflector mirror.Metallic reflective coating is A120 (as shown in Figure 3).The structural order of omnidirectional reflection is followed successively by titanium dioxide 18/ silica 1 9/ titanium dioxide 18/ silica 1 9/ titanium dioxide 18/ silica 19 (as shown in Figure 3) from top to bottom, and the thickness of titanium dioxide 18, silica 19 is respectively 40～60 dusts; The structural order of distributed bragg reflector mirror is followed successively by titanium dioxide 18/ silica 1 9/ titanium dioxide 18/ silica 1 9/ titanium dioxide 18/ silica 1 9/ titanium dioxide 18 (as shown in Figure 4) from top to bottom.
Please refer to Fig. 2, the manufacture method of the said goods comprises the steps:
(1) utilize photoetching, etching, peel off, the semiconductor microactuator process technology of a series of routines such as evaporation, alloy makes the blue light high power gallium nitride LED chip of 1000 μ m * 1000 μ m with gallium nitride based LED epitaxial slice, its structure comprises Sapphire Substrate 11, N type GaN layer 12, active layer 13, P type GaN layer 14, transparency conducting layer 15, P electrode 16 and N electrode 17;
(2) utilize grinding, polishing process technology that Sapphire Substrate 11 is thinned to 60～130 μ m, the surface of cleaning chip is with Impurity removal, and the mode of employing high-temperature baking is carried out drying to chip;
(3) use the electron beam evaporation plating machine with the plating rate of 0.5 /s in the bottom surface of Sapphire Substrate 11 evaporation TiO successively
218/SiO
219/TiO
218/SiO
219/TiO
218/SiO
219, form omnidirectional reflection, every layer of TiO
218, SiO
219 thickness is 40～60 dusts, again with the plating rate of the 3 /s SiO at the bottom
2The metal A l20 of 19 bottom surface evaporation 1000～5000 dusts forms the reflectance coating of being made up of omnidirectional reflection and Al20; The model of producing with Hitachi, Ltd is the reflectivity that the spectrometer of HITACHI U-4001 is tested this reflectance coating, its result as shown in Figure 8, reflectance coating with omnidirectional reflection can make the most light in the visible-range that reflectivity is preferably all arranged, and reflectivity is all about 97%;
Perhaps, (3) use the electron beam evaporation plating machine with the plating rate of 1 /s in the bottom surface of Sapphire Substrate 11 evaporation TiO successively
218/SiO
219/TiO
218/SiO
219/TiO
218/SiO
219/TiO
218, form distributed bragg reflector mirror.Because this chip is the blue light gallium nitride LED chip, so every layer of TiO
218 thickness is 460 dusts, SiO
219 thickness is 783 dusts, again with the plating rate of the 3 /s SiO at the bottom
2The metal A l20 of 19 bottom surface evaporation 1000～5000 dusts forms the reflectance coating of being made up of distributed bragg reflector mirror and Al20; The model of producing with Hitachi, Ltd is the reflectivity that the spectrometer of HITACHI U-4001 is tested this reflectance coating, its result as shown in Figure 9, reflectance coating with distributed bragg reflector mirror can make particular range of wavelengths, and (light as 440～540nm) has high reflectivity, and reflectivity is up to 99%.
In addition, this chip also can have heat dissipating layer at the bottom surface of reflectance coating evaporation.Its making step is: the plating rate with 10 /s has the reflectance coating bottom surface evaporation heat dissipating layer 21 of omnidirectional reflection or distributed bragg reflector mirror, this heat dissipating layer 21 is made by heat dispersion good copper or gold-tin alloy, and its thickness is 10000～30000 dusts.Have omnidirectional reflection and this heat dissipating layer 21 chip structure as shown in Figure 3, and have distributed bragg reflector mirror and this heat dissipating layer 21 chip structure as shown in Figure 4.
Or, this chip also can be around substrate and reflectance coating and the bottom surface of reflectance coating be electroplate with heat dissipating layer.Its making step is: around Sapphire Substrate 11 and reflectance coating and the bottom of reflectance coating electroplate heat dissipating layer 22, this heat dissipating layer 22 is made of copper, its thickness is 100～200 μ m.Have omnidirectional reflection and this heat dissipating layer 22 chip structure as shown in Figure 5, and have distributed bragg reflector mirror and this heat dissipating layer 22 chip structure as shown in Figure 6.
The heat dispersion that heat dissipating layer 21 that the present invention makes or heat dissipating layer 22 can improve light-emitting diode effectively reduces the working temperature of chip, increases its stability, and then promotes its chip internal conversion quantum efficiency.
Table 1 has been listed the naked brilliant test data of blue light high power gallium nitride LED chip that has omnidirectional reflection and heat dissipating layer 21 and be of a size of 1000 μ m * 1000 μ m, i.e. luminous intensity when injecting running current 0.35A.
Table 2 has been listed the naked brilliant test data of blue light high power gallium nitride LED chip that has omnidirectional reflection and heat dissipating layer 22 and be of a size of 1000 μ m * 1000 μ m, i.e. luminous intensity when injecting running current 0.35A.
| |
1 | 2 | 3 | 4 | 5 |
| Substrate thickness (μ m) | 60 | 80 | 80 | 85 | 130 |
| TiO 2Thickness (dust) | 40 | 50 | 50 | 50 | 60 |
| SiO 2Thickness (dust) | 40 | 50 | 50 | 50 | 60 |
| Al thickness (dust) | 1000 | 1500 | 2300 | 3000 | 5000 |
| Heat |
10000 | 20000 | 15000 | 25000 | 30000 |
| Operating current (A) | 0.35 | 0.35 | 0.35 | 0.35 | 0.35 |
| Luminous intensity (mcd) | 935 | 950 | 961 | 979 | 956 |
Table 1
| Chip number | 6 | 7 | 8 | 9 | 10 |
| Substrate thickness (μ m) | 60 | 100 | 95 | 105 | 130 |
| TiO 2Thickness (dust) | 40 | 60 | 50 | 50 | 50 |
| SiO 2Thickness (dust) | 40 | 60 | 50 | 50 | 50 |
| Al thickness (dust) | 1000 | 2500 | 1500 | 3000 | 5000 |
| |
100 | 140 | 160 | 180 | 200 |
| Operating current (A) | 0.35 | 0.35 | 0.35 | 0.35 | 0.35 |
| Luminous intensity (mcd) | 951 | 975 | 965 | 989 | 957 |
Table 2
Shown in table 1, table 2, have the luminous intensity average out to 961.8mcd of the light-emitting diode chip for backlight unit of omnidirectional reflection, the luminous intensity of the light-emitting diode chip for backlight unit of making than conventional method has promoted about 28.2%; Wherein, when the thickness of Al20 is 1500～3000 dusts, the thickness of heat dissipating layer 21 is 15000～25000 dusts, and when perhaps the thickness of heat dissipating layer 22 was 140～180 μ m, the luminous strength ratio of chip was higher.
Table 3 has been listed the naked brilliant test data of blue light high power gallium nitride LED chip that has distributed bragg reflector mirror and heat dissipating layer 21 and be of a size of 1000 μ m * 1000 μ m, i.e. luminous intensity when injecting running current 0.35A.
Table 4 has been listed the naked brilliant test data of blue light high power gallium nitride LED chip that has distributed bragg reflector mirror and heat dissipating layer 22 and be of a size of 1000 μ m * 1000 μ m, i.e. luminous intensity when injecting running current 0.35A.
| |
11 | 12 | 13 | 14 | 15 |
| Substrate thickness (μ m) | 60 | 85 | 80 | 90 | 130 |
| TiO 2Thickness (dust) | 460 | 460 | 460 | 460 | 460 |
| SiO 2Thickness (dust) | 783 | 783 | 783 | 783 | 783 |
| Al thickness (dust) | 1000 | 3000 | 1500 | 2000 | 5000 |
| |
10000 | 20000 | 15000 | 25000 | 30000 |
| Operating current (A) | 0.35 | 0.35 | 0.35 | 0.35 | 0.35 |
| Luminous intensity (mcd) | 998 | 1041 | 1011 | 1030 | 989 |
Table 3
| |
16 | 17 | 18 | 19 | 20 |
| Substrate thickness (μ m) | 60 | 95 | 105 | 100 | 130 |
| TiO 2Thickness (dust) | 460 | 460 | 460 | 460 | 460 |
| SiO 2Thickness (dust) | 783 | 783 | 783 | 783 | 783 |
| Al thickness (dust) | 1000 | 3000 | 1500 | 2000 | 5000 |
| |
100 | 140 | 160 | 180 | 200 |
| Operating current (A) | 0.35 | 0.35 | 0.35 | 0.35 | 0.35 |
| Luminous intensity (mcd) | 991 | 1093 | 1015 | 1100 | 1019 |
Table 4
Shown in table 3, table 4, have the luminous intensity average out to 1028.7mcd of the light-emitting diode chip for backlight unit of distributed bragg reflector mirror, the luminous intensity of the light-emitting diode chip for backlight unit of making than conventional method has promoted about 37.2%; Wherein, when the thickness of Al20 is 1500～3000 dusts, the thickness of heat dissipating layer 21 is 15000～25000 dusts, and when perhaps the thickness of heat dissipating layer 22 was 140～180 μ m, the luminous strength ratio of chip was higher.
The gallium nitride based light emitting diode that Figure 10 makes for the present invention and the Iv-I curve comparison diagram of the gallium nitride based light emitting diode of conventional method making.Curve 1 is the Iv-I curve of the powerful gallium nitride based light emitting diode of blue light of the 1000 μ m * 1000 μ m of conventional method making, when injection running current I is 0.35A, the only about 750mcd of its luminous intensity Iv, and when injection current I was increased to 0.75A, Iv just began decay.Its less stable is described. Curve 2,3,4,5 is respectively the Iv-I curve that chip number is 2,7,14,19 light-emitting diode, and as shown in figure 10, when injecting running current I and be 0.35A, its luminous intensity Iv is respectively 950mcd, 975mcd, 1030mcd, 1100mcd.And each luminous intensity Iv all increases along with the increase of injection current I, when injection current I increases to 1A, decay does not appear in Iv, the LED heat radiating performance that the The above results explanation has heat dissipating layer is good, and stability is higher, and then the external light emission efficiency of light-emitting diode is also higher.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.
Claims (17)
1. a gallium nitride LED chip comprises substrate, and the thickness of described substrate is 60～130 μ m, and the bottom surface of described substrate is provided with reflectance coating, it is characterized in that,
Described reflectance coating comprises dielectric reflectance coating and metallic reflective coating, and this dielectric reflectance coating is located at the bottom surface of described substrate, and this metallic reflective coating is located at the bottom surface of dielectric reflectance coating.
2. gallium nitride LED chip according to claim 1 is characterized in that, described dielectric reflectance coating is omnidirectional reflection or distributed bragg reflector mirror.
3. gallium nitride LED chip according to claim 2 is characterized in that, described omnidirectional reflection, distributed bragg reflector mirror all are the combination of the titania/silica that is arranged alternately successively in the substrate bottom surface.
4. gallium nitride LED chip according to claim 3 is characterized in that, the number of plies of titanium dioxide, silicon dioxide all is 3 layers in the described omnidirectional reflection, and the thickness of titanium dioxide, silicon dioxide all is 40～60 dusts; The number of plies of titanium dioxide is 4 layers in the described distributed bragg reflector mirror, and the number of plies of silicon dioxide is 3 layers.
5. gallium nitride LED chip according to claim 4 is characterized in that, described metallic reflective coating is an aluminium.
6. gallium nitride LED chip according to claim 5 is characterized in that, the thickness of described substrate is 80～105 μ m, and the thickness of described aluminium is 1000～5000 dusts.
7. according to claim 1,2,3,4,5 or 6 described gallium nitride LED chips, it is characterized in that the bottom surface of described metallic reflective coating is provided with heat dissipating layer.
8. gallium nitride LED chip according to claim 7 is characterized in that, described heat dissipating layer is copper or gold-tin alloy, and its thickness is 10000～30000 dusts.
9. according to claim 1,2,3,4,5 or 6 described gallium nitride LED chips, it is characterized in that around described substrate and the reflectance coating and the bottom surface of metallic reflective coating is provided with heat dissipating layer.
10. gallium nitride LED chip according to claim 9 is characterized in that, described heat dissipating layer is a copper, and its thickness is 100～200 μ m.
11. a method of making the described gallium nitride LED chip of claim 1 is characterized in that described method comprises the steps:
(a) the gallium nitride-based epitaxial sheet is made into gallium nitride LED chip, and is 60～130 μ m substrate thinning to the thickness of this chip;
(b) in the bottom surface of above-mentioned substrate the dielectric reflectance coating is set, metallic reflective coating is set in the bottom surface of dielectric reflectance coating.
12. the method for making gallium nitride LED chip according to claim 11, it is characterized in that, described dielectric reflectance coating is arranged on the bottom surface of substrate in the mode of evaporation, and described metallic reflective coating is arranged on the bottom surface of dielectric reflectance coating in the mode of evaporation.
13. the method for making gallium nitride LED chip according to claim 12 is characterized in that, described dielectric reflectance coating is omnidirectional reflection or distributed bragg reflector mirror.
14. the method for making gallium nitride LED chip according to claim 13 is characterized in that, described omnidirectional reflection, distributed bragg reflector mirror all are the alternately combination of the titania/silica of evaporation successively in the substrate bottom surface.
15. the method for making gallium nitride LED chip according to claim 14 is characterized in that, the number of plies of titanium dioxide, silicon dioxide all is 3 layers in the described omnidirectional reflection; The number of plies of titanium dioxide is 4 layers in the described distributed bragg reflector mirror, and the number of plies of silicon dioxide is 3 layers.
16. the method according to claim 11,12,13,14 or 15 described making gallium nitride LED chips is characterized in that, also comprises the steps:
(c) at the bottom surface of above-mentioned metallic reflective coating evaporation heat dissipating layer.
17. the method according to claim 11,12,13,14 or 15 described making gallium nitride LED chips is characterized in that, also comprises the steps:
(c) around above-mentioned substrate and reflectance coating and the bottom surface of metallic reflective coating electroplate heat dissipating layer.
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