CN102299229A - Light emitting diode with Bragg film and metal layer - Google Patents
Light emitting diode with Bragg film and metal layer Download PDFInfo
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- CN102299229A CN102299229A CN2010102105387A CN201010210538A CN102299229A CN 102299229 A CN102299229 A CN 102299229A CN 2010102105387 A CN2010102105387 A CN 2010102105387A CN 201010210538 A CN201010210538 A CN 201010210538A CN 102299229 A CN102299229 A CN 102299229A
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Abstract
The invention relates to a light emitting diode with a Bragg film and a metal layer. The Bragg film and the metal layer are plated below a sapphire substrate; the Bragg film is formed by superposing multiple layers of optical films with two different refractive indexes, and the Bragg film has optimized thickness and material stack by optical operation; the Bragg film and the metal layer can form a high-reflectivity region; and the high-reflectivity region has good reflectivity on incident light of different incident angles and can reflect the light generated by a luminous layer, so that the light emitted downwards is reflected again and emitted from the surface or the side, and light quenching efficiency is greatly promoted.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, relate in particular to the light-emitting diode that possesses Prague film and metal level.
Background technology
With reference to shown in Figure 1, it is the conventional blu-ray light-emitting diode structure, it is for growing up a n type gallium nitride layer 2, an active layer 3 and a P type gallium nitride layer 4 successively on a sapphire substrate 1, and after plating a N type electrode 5 and a P type electrode 6 respectively on this n type gallium nitride layer 2 and this P type gallium nitride layer 4, promptly form light emitting diode construction.
This conventional blu-ray light emitting diode construction, the light that it sent is indefinite direction, therefore more than half light can shed from sapphire substrate 1, and can't use as display light source, and then has reduced the quenching efficiency of light source.
Therefore, known to increase the quenching efficiency of light source, the reflecting material that must arrange in pairs or groups in the package module could be gone out the light of directive bottom by front or sideswipe, yet, even the metal that is coated with high reflection is in the back side of LED crystal particle, because of metal itself has the characteristic of extinction, can reduce the efficient of bottom reflection, still can't effectively increase the quenching efficiency of light source.
Summary of the invention
Therefore, main purpose of the present invention is to provide a kind of light emitting diode construction with high reflectance, to increase luminosity.
Based on above-mentioned purpose, the invention provides a kind of light-emitting diode that possesses Prague film and metal level, it comprises a sapphire substrate, Prague film, a luminescent layer and a metal level, wherein luminescent layer is grown up on this sapphire substrate, this Prague film is located at the side of this sapphire substrate away from this luminescent layer, and this Prague film has at least two thin layers, the material that these at least two thin layers are two kinds of different refractivities is stacked alternately, and this metal level is located on this Prague film.
In view of the above, the invention has the advantages that, can be by being formed at Prague film and the metal level under this sapphire substrate, has high reflectivity, zone as high reflectance is provided, reflecting the light that this luminescent layer is produced, make the light that penetrates reflect again down and by surface or side bright dipping, significantly to promote the quenching efficiency of light.
Description of drawings
Fig. 1 is the profile of known luminescence diode structure.
Fig. 2 is the profile of light emitting diode construction of the present invention.
Fig. 3 is the profile of Prague of the present invention film.
Fig. 4 is a luminous schematic diagram of the present invention.
Fig. 5 is wavelength of the present invention-reflectance curve figure.
Fig. 6 is the curve chart of incidence angle-reflectivity of the present invention.
Embodiment
Therefore, relevant detailed content of the present invention and technical descriptioon now are described further with embodiment, but will be appreciated that this embodiment only is used to illustrate, and should not be interpreted as restriction of the invention process.
With reference to shown in Figure 2, the present invention is a kind of light-emitting diode that possesses Prague film and metal level, it comprises a sapphire substrate 10, Prague film 20, a luminescent layer 30 and a metal level 40, this luminescent layer 30 is grown up on this sapphire substrate 10, and this Prague film 20 is located at the side away from this luminescent layer 30 of this sapphire substrate 10, and this metal level 40 is located on this Prague film 20.
In addition, this luminescent layer 30 comprises a n type semiconductor layer 31, one active layer 32 and a p type semiconductor layer 33, wherein be coated with a N type electrode 34 and a P type electrode 35 respectively on this n type semiconductor layer 31 and this p type semiconductor layer 33, and this n type semiconductor layer 31 and this p type semiconductor layer 33 are for being selected from gallium nitride (GaN), InGaN (InGaN), aluminum indium nitride gallium (AlInGaN), gallium phosphide (GaP), AlGaInP (AlInGaP), any of aluminum phosphate indium (AlInP) and aluminum gallium arsenide (AlGaAs) made, and this active layer 32 is gallium nitride (GaN), InGaN (InGaN), aluminum indium nitride gallium (AlInGaN), gallium phosphide (GaP), AlGaInP (AlInGaP), the periodic structure on quantum well (QuantumWell) the collocation barrier layer (Barrier) of any in aluminum phosphate indium (AlInP) and the aluminum gallium arsenide (AlGaAs).
In the lump with reference to shown in Figure 3, this Prague film 20 has at least two thin layers 21,22, and the material that these at least two thin layers 21,22 are two kinds of different refractivities is stacked alternately, and promptly this Prague film 20 is a multi-layer film structure, convenience in order to represent is only drawn four and is represented herein.In addition, in this Prague film 20, the higher thin layer 21 of refractive index can be selected from refractive index (Refraction Index) greater than 1.7 high index of refraction optical thin film material (as titanium dioxide (TiO2), many silicon nitrides (SiNx), tantalum pentoxide (Ta2O5), zirconia (Zr
2O
3)) in any, the thin layer 22 that refractive index is lower can be selected from refractive index (Refraction Index) and be lower than 1.7 low-refraction optical thin film material (as silicon dioxide (SiO
2), magnesium fluoride (MgF
2) in any.In addition, this metal level 40 can by silver with aluminium in any make.
With reference to shown in Figure 4, the present invention is below sapphire substrate 10, this Prague film 20 and this metal level 40 is set, and these Prague film 20 mutual materials of arranging two kinds of different refractivities, thereby can provide zone as high reflectance, thereby can reflect the light that this luminescent layer 30 is produced, make the light that penetrates reflect again down and by surface or side bright dipping, to promote light quenching efficiency.
With reference to Fig. 5 and shown in Figure 6, Prague of the present invention film 20 can have the thickness and the material stack of optimization through optimization, and its optimal way is for to do optimization by Computer Simulation software with the structure of similar Bragg mirror.The tradition Bragg mirror is the dielectric layer Cross-Stack with two kinds of different materials, and the optical thickness of its every kind material in the process of mutual storehouse is identical, can claim its periodicity storehouse interleaved set to be combined into one group of Bragg mirror.And Prague film 20 with optimization is combined with the Bragg mirror more than a group, each layer optical thickness that has optimization in addition is inequality in every group of Bragg mirror, after the plating complete has the Prague of optimization film 20, in the metal level 40 of last one deck plated aluminum or silver series, so that the high reflection characteristic of full angle to be provided.
And embodiments of the invention, it is as follows that it optimizes each layer of rear film structure:
Ground floor (1st) SiO
2: λ/(4n); The second layer (2nd) TiO
2: λ/(4n); The 3rd layer of (3rd) SiO
2: λ/(4n); The 4th layer of (4th) TiO
2: λ/(4n); Layer 5 (5th) SiO
2: 5 λ/(4n); Layer 6 (6th) TiO
2: 3 λ/(4n); Layer 7 (7th) SiO
2: 2.41 λ/(4n); The 8th layer of (8th) TiO
2: 1.2 λ/(4n); The 9th layer of (9th) SiO
2: 2.43 λ/(4n); The tenth layer of (10th) TiO
2: 0.5 λ/(4n); Wherein λ is that incident light wavelength, n are positive integer.
As shown in Figure 5, its light vertical component by directly over inject, wherein light reflectivity curve 5A is the curve chart that tradition is used fine aluminium, light reflectivity curve 5B uses the curve chart of this Prague film 20 and this metal level 40 (use aluminium) for the present invention, light reflectivity curve 5C then is the curve chart of Prague film 20 after optimizing with this metal level 40 (use aluminium), as seen from the figure, the light reflectivity curve 5B, the 5C that use Prague film 20 are apparently higher than traditional light reflectivity curve 5A, that is, can increase reflectivity and promote light quenching efficiency.
And as shown in Figure 6, light reflectivity curve 6A is that the 460nm light wave uses fine aluminium in the curve chart of different angles incident in tradition, light reflectivity curve 6B is then for using the curve chart of this Prague film 20 and this metal level 40 (use aluminium), light reflectivity curve 6C then is the curve chart of Prague film 20 after optimizing with this metal level 40 (use aluminium), as shown in the figure, it all has good reflectivity in different incidence angles Prague film 20 after use optimizing, therefore can improve light quenching efficiency significantly.
Claims (10)
1. a light-emitting diode that possesses Prague film and metal level is characterized in that, comprises:
One sapphire substrate (10);
One luminescent layer (30), described luminescent layer (30) are grown up on described sapphire substrate (10);
One Prague film (20), described Prague film (20) is located at the side away from described luminescent layer (30) of described sapphire substrate (10), and described Prague film (20) has at least two thin layers (21,22), and described at least two thin layers (21,22) are that the material of two kinds of different refractivities is stacked alternately; And
One metal level (40), described metal level (40) is located on described Prague film (20).
2. the light-emitting diode that possesses Prague film and metal level according to claim 1 is characterized in that, described luminescent layer (30) comprises a n type semiconductor layer (31), an active layer (32) and a p type semiconductor layer (33).
3. the light-emitting diode that possesses Prague film and metal level according to claim 2 is characterized in that, is coated with a N type electrode (34) and a P type electrode (35) on described n type semiconductor layer (31) and the described p type semiconductor layer (33) respectively.
4. the light-emitting diode that possesses Prague film and metal level according to claim 2, it is characterized in that described n type semiconductor layer (31) and described p type semiconductor layer (33) are made by in gallium nitride, InGaN, aluminum indium nitride gallium, gallium phosphide, AlGaInP, aluminum phosphate indium and the aluminum gallium arsenide any.
5. the light-emitting diode that possesses Prague film and metal level according to claim 2, it is characterized in that described active layer (32) is any the periodic structure on quantum well collocation barrier layer in gallium nitride, InGaN, aluminum indium nitride gallium, gallium phosphide, AlGaInP, aluminum phosphate indium and the aluminum gallium arsenide.
6. the light-emitting diode that possesses Prague film and metal level according to claim 1, it is characterized in that, thin layer refractive index the higher person of described Prague film (20) is a refractive index greater than 1.7 high index of refraction optical thin film material, and the thin layer refractive index junior of described Prague film (20) is lower than 1.7 low-refraction optical thin film material for refractive index.
7. the light-emitting diode that possesses Prague film and metal level according to claim 6 is characterized in that, high index of refraction optical thin film material is selected from any in titanium dioxide, many silicon nitrides, tantalum pentoxide, the zirconia.
8. the light-emitting diode that possesses Prague film and metal level according to claim 6 is characterized in that, low-refraction optical thin film material is selected from any in silicon dioxide, the magnesium fluoride.
9. the light-emitting diode that possesses Prague film and metal level according to claim 1 is characterized in that, described metal level (40) is selected from any in silver and the aluminium.
10. the light-emitting diode that possesses Prague film and metal level according to claim 1 is characterized in that, material and thickness after described Prague film (20) is optimized are followed successively by ground floor: silicon dioxide, λ/(4n); The second layer: titanium dioxide, λ/(4n); The 3rd layer: silicon dioxide, λ/(4n); The 4th layer: titanium dioxide, λ/(4n); Layer 5: silicon dioxide, 5 λ/(4n); Layer 6: titanium dioxide, 3 λ/(4n); Layer 7: silicon dioxide, 2.41 λ/(4n); The 8th layer: titanium dioxide, 1.2 λ/(4n); The 9th layer: silicon dioxide: 2.43 λ/(4n); The tenth layer: titanium dioxide, 0.5 λ/(4n), wherein λ is an incident wavelength, and n is a positive integer.
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|---|---|---|---|
| CN2010102105387A CN102299229A (en) | 2010-06-22 | 2010-06-22 | Light emitting diode with Bragg film and metal layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102105387A CN102299229A (en) | 2010-06-22 | 2010-06-22 | Light emitting diode with Bragg film and metal layer |
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| CN102299229A true CN102299229A (en) | 2011-12-28 |
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| CN2010102105387A Pending CN102299229A (en) | 2010-06-22 | 2010-06-22 | Light emitting diode with Bragg film and metal layer |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751400A (en) * | 2012-07-18 | 2012-10-24 | 合肥彩虹蓝光科技有限公司 | Cutting method of semiconductor component containing metal back plating |
| CN102825668A (en) * | 2012-09-14 | 2012-12-19 | 合肥彩虹蓝光科技有限公司 | Cutting method of semiconductor part containing dielectric layer |
| CN104576706A (en) * | 2015-01-27 | 2015-04-29 | 京东方科技集团股份有限公司 | Bottom-emitting type organic light-emitting display device, manufacturing method of bottom-emitting type organic light-emitting display device and display device |
| CN105098018A (en) * | 2015-06-01 | 2015-11-25 | 圆融光电科技股份有限公司 | Manufacturing method of flip LED chip |
| US9722003B2 (en) | 2015-01-27 | 2017-08-01 | Boe Technology Group Co., Ltd. | Bottom emission organic electroluminescence display device, preparation method thereof, and display apparatus |
| CN109427936A (en) * | 2017-08-24 | 2019-03-05 | 首尔伟傲世有限公司 | Light emitting diode with distributed Bragg reflector |
| CN109728199A (en) * | 2019-01-03 | 2019-05-07 | 京东方科技集团股份有限公司 | Reflecting electrode and preparation method thereof, Organic Light Emitting Diode and display device |
| CN110112184A (en) * | 2019-04-17 | 2019-08-09 | 武汉华星光电半导体显示技术有限公司 | Display panel and electronic equipment |
| CN110320670A (en) * | 2018-03-30 | 2019-10-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | All dielectric reflection-type efficiency super-thin beam splitter and the preparation method and application thereof |
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| US7622746B1 (en) * | 2006-03-17 | 2009-11-24 | Bridgelux, Inc. | Highly reflective mounting arrangement for LEDs |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751400A (en) * | 2012-07-18 | 2012-10-24 | 合肥彩虹蓝光科技有限公司 | Cutting method of semiconductor component containing metal back plating |
| CN102825668A (en) * | 2012-09-14 | 2012-12-19 | 合肥彩虹蓝光科技有限公司 | Cutting method of semiconductor part containing dielectric layer |
| CN102825668B (en) * | 2012-09-14 | 2015-01-21 | 合肥彩虹蓝光科技有限公司 | Cutting method of semiconductor part containing dielectric layer |
| CN104576706A (en) * | 2015-01-27 | 2015-04-29 | 京东方科技集团股份有限公司 | Bottom-emitting type organic light-emitting display device, manufacturing method of bottom-emitting type organic light-emitting display device and display device |
| WO2016119378A1 (en) * | 2015-01-27 | 2016-08-04 | 京东方科技集团股份有限公司 | Bottom emittingorganic light-emitting device, manufacturing method and display apparatus thereof |
| US9722003B2 (en) | 2015-01-27 | 2017-08-01 | Boe Technology Group Co., Ltd. | Bottom emission organic electroluminescence display device, preparation method thereof, and display apparatus |
| CN105098018A (en) * | 2015-06-01 | 2015-11-25 | 圆融光电科技股份有限公司 | Manufacturing method of flip LED chip |
| CN105098018B (en) * | 2015-06-01 | 2017-11-21 | 圆融光电科技股份有限公司 | The manufacture method of flip LED chips |
| CN109427936A (en) * | 2017-08-24 | 2019-03-05 | 首尔伟傲世有限公司 | Light emitting diode with distributed Bragg reflector |
| CN110320670A (en) * | 2018-03-30 | 2019-10-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | All dielectric reflection-type efficiency super-thin beam splitter and the preparation method and application thereof |
| CN109728199A (en) * | 2019-01-03 | 2019-05-07 | 京东方科技集团股份有限公司 | Reflecting electrode and preparation method thereof, Organic Light Emitting Diode and display device |
| CN110112184A (en) * | 2019-04-17 | 2019-08-09 | 武汉华星光电半导体显示技术有限公司 | Display panel and electronic equipment |
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Application publication date: 20111228 |