CN101630708A - High-efficiency light-emitting device and forming method thereof - Google Patents
High-efficiency light-emitting device and forming method thereof Download PDFInfo
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- CN101630708A CN101630708A CN200810137729A CN200810137729A CN101630708A CN 101630708 A CN101630708 A CN 101630708A CN 200810137729 A CN200810137729 A CN 200810137729A CN 200810137729 A CN200810137729 A CN 200810137729A CN 101630708 A CN101630708 A CN 101630708A
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Abstract
The invention discloses a high-efficiency light-emitting device and a forming method thereof. The method comprises the following steps: providing a light-emitting diode structure; attaching a distributed Bragg reflection layer to the light-emitting diode in a vapor deposition mode; and adhering the light-emitting diode structure to a eutectic crystal layer through the distributed Bragg reflection layer so as to form the high-efficiency light-emitting device.
Description
Technical field
The present invention relates to a kind of formation method and structure thereof of high-efficiency light-emitting device, especially by the high-efficiency light-emitting device of distributed Bragg reflector with the increase light extraction efficiency.
Background technology
Along with developing rapidly and the reduction of manufacturing cost of epitaxy technology, light-emitting diode little by little has been applied to field miscellaneous.For instance, light-emitting diode is applied to various electronic installations, for example mobile phone, multimedia player, personal digital assistant etc.More will have an opportunity to extend to again and be used for general illuminator equipment future, to replace many traditional luminaires.
And light-emitting diode is in the middle of the process of application, and one of them important problem is to improve the luminous efficiency that light is sent out diode as much as possible.At this moment, how reducing light that light-emitting diode produces and be subjected to absorption or the consume of itself, is an important improvement direction.
In the middle of traditional light emitting diode construction, can use metallic mirror to reduce the consume and the raising luminous efficiency of light.For instance, utilizing eutectic (eutectic) to replace in the middle of the technology of elargol joining technique, cause luminous efficiency to reduce because employed gold/tin thin film absorbs light easily, therefore can use metallic mirror to improve the problem of extinction at the light-emitting diode back side.With reference to shown in Figure 1, it shows a kind of light-emitting device 100 of known technology.Light-emitting device 100 has light emitting diode construction 110, titanium layer 120, aluminium lamination 130 and gold/ashbury metal layer 140.In known light-emitting device 100, use the titanium layer 120 of thick about 10 dusts, and the aluminium lamination 130 of thick about 2000 dusts is as metallic reflector, gold/ashbury metal layer 140 then is used to carry out the eutectic joint technology, or claims the eutectic welding.Yet in the middle of the structure of using traditional metallic mirror, for example employed titanium layer 120 and aluminium lamination 130 in the middle of Fig. 1, the performance of its reflectivity is still failed satisfactory, and has low reflection at the UV wave band, quite makes us puzzlement on using.In addition, the metallic reflection film can influence reflectivity because of the difference of evaporation condition, causes the control of device quality comparatively difficult.
Therefore,, can improve the luminous efficiency of element, and increase the radiating efficiency of element, its necessity is arranged in fact if a kind of high efficiency light-emitting device can be provided.
Summary of the invention
One aspect of the present invention provides a kind of high efficiency light-emitting device, and it utilizes the distributed Bragg reflector to improve easy extinction of metallic reflection film and the not good problem of reflectivity in the known technology.
The present invention provides a kind of high efficiency light-emitting device on the other hand, and its reflectivity is not subjected to the evaporation condition effect, and can improve light extraction efficiency.
Another aspect of the invention provides a kind of high efficiency light-emitting device, and distributed Bragg reflector wherein has little contact array, to improve the radiating efficiency of light-emitting device.
In an embodiment of the present invention, a kind of method that forms high-efficiency light-emitting device comprises the following steps: to provide light emitting diode construction; In the evaporation mode distributed Bragg reflector is attached on the light emitting diode construction; And light emitting diode construction is linked to the eutectic layer by the distributed Bragg reflector, to form this high-efficiency light-emitting device.In addition, the step that forms the distributed Bragg reflector also can comprise and forms a plurality of high refracting layers and a plurality of forming low-refractive-index layer alternately, piles up alternately to constitute the difference of height index film.Perhaps, can also form little contact layer array among the difference of height index film piles up alternately, to improve the radiating efficiency of material.
In the employed material of light-emitting device of the present invention, can optionally use following material (but being not limited thereto): a plurality of high refracting layers are gold-tin alloy as silicon dioxide layer, little contact layer as metal material eutectic layer as titanium dioxide layer, a plurality of forming low-refractive-index layer.
In another embodiment of the invention, a kind of high-efficiency light-emitting device comprises following element: light emitting diode construction; The eutectic layer; And the distributed Bragg reflector is between light emitting diode construction and eutectic layer, and the distributed Bragg reflector is attached to light emitting diode construction in the evaporation mode.The distributed Bragg reflector also can comprise a plurality of high refracting layers and a plurality of forming low-refractive-index layer, and wherein a plurality of high refracting layers and a plurality of forming low-refractive-index layer are arranged alternately, piles up alternately to constitute the difference of height index film.In addition, the distributed Bragg reflector also can also comprise little contact layer array, is positioned among the difference of height index film piles up alternately.
Description of drawings
Fig. 1 shows the light-emitting device of known technology;
Fig. 2 shows a light-emitting device schematic diagram according to the specific embodiment of the invention;
The schematic diagram in distributed Bragg reflector in Fig. 3 displayed map 2; And
Fig. 4 shows another light-emitting device schematic diagram according to the specific embodiment of the invention.
Description of reference numerals
100 light-emitting devices, 110 light emitting diode constructions
120 titanium layers, 130 aluminium laminations
140 gold-tin alloy layers, 200 light-emitting device
220 light emitting diode constructions, 240 distributed Bragg reflector
242 high refracting layer 244 forming low-refractive-index layers
260 eutectic layers, 400 light-emitting device
420 light emitting diode constructions, 440 distributed Bragg reflector
442 high refracting layer 444 forming low-refractive-index layers
445 little contact layer 460 eutectic layers
Embodiment
Fig. 2 shows a schematic diagram according to the light-emitting device 200 of the specific embodiment of the invention.High-efficiency light-emitting device 200 comprises light emitting diode construction 220, distributed Bragg reflector (distributed-Braggreflecting layer, DBR) 240, and eutectic layer 260.Distributed Bragg reflector 240 is between light emitting diode construction 220 and eutectic layer 260.In the technology that forms this high-efficiency light-emitting device 200, at first provide light emitting diode construction 220.Any known light-emitting diode all can be applicable among the present invention, the high brightness LED of InGaN for example, but the present invention is not as limit.
Then utilize the mode of evaporation, distributed Bragg reflector 240 is attached on the light emitting diode construction 220, to replace the not good shortcoming of reflectivity in conventional metals reflector.Application distribution Bragg reflecting layer 240 can be so that the reflectivity of light-emitting device 200 greatly be promoted to more than 90%, and preferably, its reflectivity can reach and be close to 100% reflectivity.By distributed Bragg reflector 240, light emitting diode construction 220 is linked to eutectic layer 260, at last to form this high-efficiency light-emitting device 200.
In the present embodiment, eutectic layer 260 is the gold-tin alloy layer, to replace the joint technology of traditional elargol, can improve the problem of tube core heat radiation significantly.Yet be noted that at this present invention is not exceeded with the gold-tin alloy layer.In addition, in the present embodiment, the thickness of eutectic layer 260 is about 1.5 microns, yet the present invention is not also as limit.
Please refer to Fig. 3 now, the distributed Bragg reflector 240 in its further displayed map 2.Distributed Bragg reflector 240 has a plurality of high refracting layers 242 and a plurality of forming low-refractive-index layer 244.At this alleged high refracting layer 242, refer to compared to forming low-refractive-index layer 244, formed by having higher refractive index materials.Relatively, 244 of forming low-refractive-index layers are meant compared to high refracting layer 242, are formed by the material that has than low-refraction.
As shown in Figure 3, a plurality of high refracting layers 242 and a plurality of forming low-refractive-index layer 244 form alternately, pile up alternately to constitute the difference of height index film.Utilize high-index material and low-index material to make the film of repeatedly stacking, to form the distributed Bragg reflector (DBR) 240 of high reflectance, to improve the luminous efficiency of the light-emitting diode of using eutectic technology.
Must be noted that at this accompanying drawing herein is used to illustrate, and the present invention can there be how different modifications and variation in fact.For instance, do not exceed with four layers shown in Figure 3 in distributed Bragg reflector 240, and more or less layer pile up can be arranged, and can decide on the situation of actual enforcement.In addition, in the present embodiment, a plurality of high refracting layers 242 are titanium dioxide layer, and a plurality of forming low-refractive-index layer 244 is a silicon dioxide layer, but the present invention is not also as limit.
Fig. 4 shows another schematic diagram according to the light-emitting device 400 of the specific embodiment of the invention.High-efficiency light-emitting device 400 comprises light emitting diode construction 420, distributed Bragg reflector (distributed-Bragg reflecting layer, DBR) 440, and eutectic layer 460.Distributed Bragg reflector 440 is between light emitting diode construction 420 and eutectic layer 460.In the technology that forms this high-efficiency light-emitting device 400, at first provide light emitting diode construction 420.Any known light-emitting diode all can be applicable among the present invention, the high brightness LED of InGaN for example, but the present invention is not as limit.
In the present embodiment, distributed Bragg reflector 440 has a plurality of high refracting layers 442, a plurality of forming low-refractive-index layer 444 and little contact layer array 445.As shown in the figure, a plurality of high refracting layers 442 and a plurality of forming low-refractive-index layer 444 form alternately, pile up alternately to constitute the difference of height index film.Utilize high-index material and low-index material to make the film of repeatedly stacking, to form the distributed Bragg reflector (DBR) 240 of high reflectance, to improve the luminous efficiency of the light-emitting diode of using eutectic technology.
Little contact array 445 connects light emitting diode construction 420 and eutectic layer 460, to improve the radiating efficiency of element.Convenient for drawings clear in the present embodiment, little contact array 445 is made of two little contact layers, yet the present invention is not as limit.The present invention can also use more or less little contact layer to constitute this little contact array 445.In addition, little contact layer array 445 can use any metal material
Distributed Bragg reflector 440 utilizes the mode of evaporation to be attached on the light emitting diode construction 420, to replace the not good shortcoming of reflectivity in conventional metals reflector.Application distribution Bragg reflecting layer 440 can be so that the reflectivity of light-emitting device 400 greatly be promoted to more than 90%, and preferably, its reflectivity can reach and be close to 100% reflectivity.By distributed Bragg reflector 440, light emitting diode construction 420 is linked to eutectic layer 460, at last to form this high-efficiency light-emitting device 400.In addition, in the present embodiment, the thickness of eutectic layer 460 is about 1.5 microns, yet the present invention does not also limit with this.
In sum, in view of easy extinction of metallic reflector in the known technology and the not good problem of reflectivity, the present invention utilizes the distributed Bragg reflector, can improve reflectivity and reach closely 100%, improves the luminous efficiency of light-emitting device significantly.In addition, known metallic reflection film has low reflection at the UV wave band, and the distributed Bragg reflector that the present invention uses does not also have this problem.Moreover traditional metallic reflector can influence reflectivity because of the evaporation condition, and technology is wayward, and the distributed Bragg reflector that the present invention uses does not then have this problem, further increases the elasticity on the technology controlling and process.Select little contact array of setting in the distributed Bragg reflector for use, can also further improve the radiating efficiency of element.
The above embodiments are in order to describe the present invention, and right the technology of the present invention still can have many modifications and variation.Therefore, the present invention is not limited to the description of above specific embodiment, and claim of the present invention desires to comprise all, and this type of is revised and variation, with real spirit according to the invention of energy and scope.
Claims (14)
1. method that forms high-efficiency light-emitting device comprises:
Light emitting diode construction is provided;
In the evaporation mode distributed Bragg reflector is attached on this light emitting diode construction; And
By this distributed Bragg reflector this light emitting diode construction is linked to the eutectic layer, to form this high-efficiency light-emitting device.
2. the method for claim 1, the step that wherein forms this distributed Bragg reflector also comprises:
Form a plurality of high refracting layers and a plurality of forming low-refractive-index layer alternately, pile up alternately to constitute the difference of height index film.
3. method as claimed in claim 2, wherein these a plurality of high refracting layers are titanium dioxide layer, and these a plurality of forming low-refractive-index layers are silicon dioxide layer.
4. method as claimed in claim 2, the step that wherein forms this distributed Bragg reflector also comprises:
Form little contact layer array among this difference of height index film piles up alternately, and connect this light emitting diode construction and this eutectic layer.
5. method as claimed in claim 4, wherein this little contact layer uses metal material to constitute.
6. the method for claim 1, wherein this eutectic layer is made of gold-tin alloy.
7. method as claimed in claim 5, wherein the thickness of this eutectic layer is about 1.5 microns.
8. high-efficiency light-emitting device comprises:
Light emitting diode construction;
The eutectic layer; And
The distributed Bragg reflector is between this light emitting diode construction and this eutectic layer, and this distributed Bragg reflector is attached to this light emitting diode construction in the evaporation mode.
9. device as claimed in claim 7, wherein this distributed Bragg reflector also comprises:
A plurality of high refracting layers; And
A plurality of forming low-refractive-index layers;
Wherein these a plurality of high refracting layers and these a plurality of forming low-refractive-index layers are arranged alternately, pile up alternately to constitute the difference of height index film.
10. device as claimed in claim 8, wherein these a plurality of high refracting layers are titanium dioxide layer, and these a plurality of forming low-refractive-index layers are silicon dioxide layer.
11. method as claimed in claim 8, wherein this distributed Bragg reflector also comprises:
Little contact layer array is positioned among this difference of height index film piles up alternately, and connects this light emitting diode construction and this eutectic layer.
12. device as claimed in claim 10, wherein this little contact layer uses metal material to constitute.
13. device as claimed in claim 7, wherein this eutectic layer is made of gold-tin alloy.
14. method as claimed in claim 12, wherein the thickness of this eutectic layer is about 1.5 microns.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810137729A CN101630708A (en) | 2008-07-18 | 2008-07-18 | High-efficiency light-emitting device and forming method thereof |
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| CN200810137729A CN101630708A (en) | 2008-07-18 | 2008-07-18 | High-efficiency light-emitting device and forming method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157639A (en) * | 2011-03-01 | 2011-08-17 | 湘能华磊光电股份有限公司 | LED (Light-Emitting Diode) chip and preparation method thereof |
| CN102315345A (en) * | 2010-07-05 | 2012-01-11 | 广镓光电股份有限公司 | Luminous element |
| CN102842675A (en) * | 2011-06-22 | 2012-12-26 | 海洋王照明科技股份有限公司 | Polymer solar battery with top incidence and preparation method thereof |
| CN110571319A (en) * | 2019-10-17 | 2019-12-13 | 扬州乾照光电有限公司 | flip LED structure of multi-stack ODR and manufacturing method |
-
2008
- 2008-07-18 CN CN200810137729A patent/CN101630708A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315345A (en) * | 2010-07-05 | 2012-01-11 | 广镓光电股份有限公司 | Luminous element |
| CN102157639A (en) * | 2011-03-01 | 2011-08-17 | 湘能华磊光电股份有限公司 | LED (Light-Emitting Diode) chip and preparation method thereof |
| CN102842675A (en) * | 2011-06-22 | 2012-12-26 | 海洋王照明科技股份有限公司 | Polymer solar battery with top incidence and preparation method thereof |
| CN110571319A (en) * | 2019-10-17 | 2019-12-13 | 扬州乾照光电有限公司 | flip LED structure of multi-stack ODR and manufacturing method |
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Application publication date: 20100120 |