CN110320670A - All dielectric reflection-type efficiency super-thin beam splitter and the preparation method and application thereof - Google Patents
All dielectric reflection-type efficiency super-thin beam splitter and the preparation method and application thereof Download PDFInfo
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- CN110320670A CN110320670A CN201810289911.9A CN201810289911A CN110320670A CN 110320670 A CN110320670 A CN 110320670A CN 201810289911 A CN201810289911 A CN 201810289911A CN 110320670 A CN110320670 A CN 110320670A
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
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Abstract
The invention discloses a kind of all dielectric reflection-type efficiency super-thin beam splitters and the preparation method and application thereof.The beam splitter includes building block array, and each structural unit therein includes: high-efficiency tandem reflector, has the structure based on Distributed Bragg Reflection structure；Multi-media transport layer is arranged on high-efficiency tandem reflector；And media feature layer, it is arranged on Multi-media transport layer, and the nano-pillar array structure including periodization.Beam splitter of the invention has excellent beam splitting performance, the visible light of normal incidence can be separated into two beam emergent lights, and have the characteristics that efficiency is higher, wave band is wider, structure is simple, ultra-thin light easy of integration, low power consumption and low cost, be relatively easy to production, there is very big application value in optical sensor system, advanced nano-photon device and integrated optics system.
Description
Technical field
The present invention relates to a kind of beam splitters, and in particular to a kind of all dielectric reflection-type efficiency super-thin beam splitter and its preparation side
Method and application, belong to optical element preparation technical field.
Background technique
Beam splitter is that light beam is divided into two or more optical components, in photonic circuit system, optics display system
It is widely used in system and optical machining system.Most common beam splitter is that cube point is made of two triangle glass prisms
Beam device, they are glued together on matrix using polyester, epoxy resin or polyurethane binding.Adjust the thickness of resin layer
Degree so that reflected by the half of (the certain wavelength) of the light of one " port " (i.e. the face of cube) incidence, the other half by
It continues to transmit in whole internal reflections.The polarization beam apparatus of such as Wollaston prism uses birefringent material, splits the light into
Not like-polarized light beam.In Traditional optics as described above, the manipulation to light wave is by light in given refractive index
Propagation come what is realized, the variation of amplitude, phase and polarization is accumulated and propagating in the medium, so as to cause
Device is heavy and not easy of integration.However, being integrated on a single chip more as shown in the Moore's Law of extensive photonic integrated circuits
Come under the demand of more elements, the size for reducing optical element to the maximum extent is expected by people.However, although people
Done huge effort, but the progress of integreted phontonics be still it is fairly limited, main cause is integrated photonic device than integrated
Electronic device is more difficult to manufacture.Modernization industry minimizes the birth and development that integrated target promotes micronano optical.And it is close
Nian Lai, the booming of super surface provide a method to overcome above-mentioned limitation.Super surface is a kind of ultra-thin artificial material,
It is made of the micro-nano structure array of sub-wavelength dimensions.Studies have shown that light can generate table with micro-nano structure effect under sub-wavelength dimensions
Face Plasmon Resonance phenomenon, resonance wave strong point is with a phase jump.By the geometric form for regulating and controlling micro-nano cellular construction
The optic response of shape and parameter, transmission or reflected light can be manipulated accurately, and special position phase is generated at specified wavelength
Mutation, plays deviation, convergence, the purpose for separating light beam, and the research for the manipulation of optics position phase opens new gate.With micro-
Receive the progress of processing technology, we can design and manufacture super surface device using plane silicon-based processing techniques, exist to meet
The requirement integrated on superthin section.Currently, entering the visual field of people based on the super-thin high efficient beam splitter on super surface, it is based on super surface
Beam splitter can be realized on ultra-thin two-dimensional surface platform transmitted light or reflected light propagation position phase regulation, it is real
The planar lens based on super surface, ultra-thin phase mask and thin-film wave plate are showed.Beam splitter with nano-grade size is for making
The miniaturization of the component (for example, on piece optical interdferometer, optical multiplexer (or demultiplexer) etc.) of integrated optical circuit,
It is integrated, efficient to be very important, and be more suitable for contemporary optics integrated system, academic and industrial circle all by
Great attention, popular research topic since becoming in the recent period.
Following integrated opto-electronic device needs more low-power consumption, the light and handy and high efficient optical device that is easily integrated how
Creating and carrying out efficient modulation to electromagnetic wave is all the hot issue that scientists from all over the world study all the time, and then have stimulated nanometer
The development of photonics.In recent years, the sub-wavelength structure device containing surface plasma-wave and the technology subject emerging as one,
There are many potential applications in many fields, thus have been to be concerned by more and more people.Currently, many seminars are utilizing nanometer
Micro-structure separate etc. to light beam has done a large amount of research work.In microwave, Terahertz and infrared band, multiple performance
Excellent efficient beam splitter is successfully developed.However, in visible light wave range, due to material inherent loss and design difficulty
Limitation, realize that the separation of efficient light beam still suffers from challenge.2015, Koray Aydin et al. utilized metal-Jie
Matter-metal (MIM) multi-layer film structure, realized under visible and near-IR frequency broadband (450-850nm) abnormal reflection and
Spectrum divides, the design of super surface and the routine using multiple anisotropy and/or gradient optics resonator proposed in the research
Super surface is significantly different, and the reflective super surface being made of the trapezoidal silver-colored plasma antenna array of single anisotropy can be with
The light of different frequency interacts, and the surface of spatial variations can carry out broadband gradient phase shift without appointing to outgoing photonic band
What crosspolar effect, and the rainbow ingredient of red, orange, yellow, green and blue abnormal reflection is generated, and can pass through
Naked eyes or camera looks into fee arrive.On this basis, Koray Aydin et al. had also been proposed a kind of facing with each other by two in 2016
Contrary various sizes of trapezoidal resonator constitute super surface by the visible light of different frequency be divided into it is entirely different very
To opposite direction, and the angular range (> 90 °) with ultra-wide.But this super surface using incident light spectral differences point
Beam device is only applicable to polychromatic light, but if incidence wave be it is monochromatic, then do not work.2017, Zhang Jian and Zhang Xinping used electricity
Sense coupling plasma (ICP) body etches into one-dimensional grating structure in the ITO layer with projected depth, wherein remaining ITO layer
As ducting layer.When reverse diffraction is Chong Die with Wave guide resonance mode, the enhancing reflection of light is observed.When incident light wave is a length of
At 532 nanometers, the light beam segregation phenomenon that splitting ratio is 1:1 can be achieved at specific incidence angle.This, which is one, has high comparison
The beam splitter of degree and narrowband response.It is also used as adjustable narrow band filter, angular transducer or photoswitch.2018,
Enlightening et al. devises a kind of super surface of the gradient based on lithium niobate cylindrical-array.The circle changed due to one by two groups of radial gradients
The cell surface of column array composition has there are two opposite phase gradient simultaneously, so according to broad sense snell law by incident light
It is divided into different directions.
It should be noted, however, that their average reflectance is all far below 90% between 450-800nm.Due to material
Expect the limitation of inherent loss and design difficulty, the efficient beam splitter suitable for visible light wave range of design, which still suffers from, to be chosen
War.But in practical applications, efficiency is an important surface design objective.It is apparent excellent due to having in some researchs
Point, such as there is low-loss with the metal phase ratio based on device in near-infrared and limit of visible spectrum, and partly lead with standard
Body manufacture compatibility, so the super surface of all dielectric is applied to the technologies such as lens, delayer, polarizer.
Summary of the invention
In view of the deficiencies of the prior art, the object of the present invention is to provide a kind of all dielectric reflection-type efficiency super-thin beam splitter and
Preparation method and application.
To realize the above goal of the invention, present invention employs technical solutions as described below:
The embodiment of the invention provides a kind of all dielectric reflection-type efficiency super-thin beam splitters comprising building block array,
And each structural unit therein includes:
High-efficiency tandem reflector has and is based on Distributed Bragg Reflection structure (distributed Bragg
Reflection, DBR) structure；Multi-media transport layer is arranged on high-efficiency tandem reflector；And
Media feature layer is arranged on Multi-media transport layer, and the nano-pillar array structure including periodization.
Further, structure (structure and distributed Bragg here based on Distributed Bragg Reflection structure
Catoptric arrangement is slightly different, particularly as be the reflector that will be designed according to the design formula of Distributed Bragg Reflection structure with it is upper
The super surface texture of layer combines, then a kind of multi-layer film structure obtained after optimizing) it include by limited high refractive index medium
Layer and limited low refractive index dielectric layer periodic structure that alternately superposition is formed, and the high refractive index medium layer, low folding
The optical thickness for penetrating rate dielectric layer is the 1/4 of center reflection wavelength.
Further, the material of the high refractive index medium layer includes any one in silicon, germanium and titanium dioxide or two
Kind or more combination.
Further, the material of the low refractive index dielectric layer includes in magnesium fluoride, silica, sapphire and zirconium oxide
Any one or two or more combinations.
Further, the material of the Multi-media transport layer includes the low folding such as magnesium fluoride, silica, sapphire and zirconium oxide
Penetrate rate light transmission medium material.
Further, the material of the media feature layer is the semiconductor materials such as silicon, germanium.
Further, the nano-pillar array structure includes the different cylinder of periodically alternately arranged limited diameter,
And the queueing discipline of the relatively large cylinder of limited diameter and the relatively small cylinder of limited diameter meets broad sense
Si Nieer law.
Further, the nano-pillar array structure of the periodization includes alternately arranged limited first array and limited
A second array, every one first array, which is arranged by the relatively large cylinder of limited diameter along two or more parallel lines, to be formed, often
One second array is arranged along two or more parallel lines by the relatively small cylinder of limited diameter and is formed, and every one first array
It is parallel to each other with each second array.
Further, the relatively large cylinder of diameter in the nano-pillar array structure, the relatively small cylinder of diameter
Diameter is respectively less than the period of the structural unit.
The embodiment of the invention also provides the preparation methods of aforementioned all dielectric reflection-type efficiency super-thin beam splitter comprising:
High-efficiency tandem reflection is alternatively formed in substrate superimposed layer with high refractive index medium material and low refractive index dielectric material
Device；
Multi-media transport layer is set on the high-efficiency tandem reflector；
Media feature layer is set on the Multi-media transport layer, and processing forms periodization in the media feature layer
Nano-pillar array structure.
Further, the preparation method include: be formed on the substrate using magnetron sputtering technology it is described efficiently folded
Layer reflector.Further, the preparation method include: using magnetron sputtering technology on the high-efficiency tandem reflector
Form the Multi-media transport layer.
Further, the preparation method includes: at least using chemical vapour deposition technique on the Multi-media transport layer
Form the media feature layer.
Further, the preparation method include: patterned photoresist mask is formed on the media feature layer, and
Media feature layer is performed etching using inductive couple plasma technology, to process the nano column array of the periodization
Structure.
The embodiment of the invention also provides aforementioned all dielectric reflection-type efficiency super-thin beam splitter in preparation optical sensor system,
Application in nano-photon device or integrated optics system.
Compared with the prior art, the invention has the advantages that
1) all dielectric reflection-type efficiency super-thin beam splitter provided by the invention has excellent beam splitting performance, can will be normal
Incident visible light is separated into two beam emergent lights, and has very high reflection efficiency, and wave band is wider, and reflection efficiency is in 450nm-
760nm wave band is average 90% or more, and reflection efficiency can reach 94.8% at 632.8nm, achieve unexpected technology
Effect；
2) all dielectric reflection-type efficiency super-thin beam splitter structure advantages of simple provided by the invention, it is ultra-thin light easy of integration,
Low power consumption and low cost is relatively easy to make, and the dimensional parameters of nano-pillar array structure are adjustable to adapt to entire visible light wave range, system
Preparation Method and existing semiconductor fabrication process are completely compatible；Overcoming the prior art needs cumbersome preparation process that can just obtain
The defect of beam splitter；
3) preparation method raw material sources of the invention are wide, preparation is simple, and financial resources, time cost are lower compared with prior art；
And it has excellent performance, in optical sensor system, advanced nano-photon device and integrated optics system, there is very big answer
With value.
Detailed description of the invention
Fig. 1 is a kind of schematic perspective view of all dielectric reflection-type efficiency super-thin beam splitter in the embodiment of the present invention 1.
Fig. 2 is a kind of three-dimensional knot of the structural unit of all dielectric reflection-type efficiency super-thin beam splitter in the embodiment of the present invention 1
Structure schematic diagram.
Fig. 3 is a kind of structural front view of all dielectric reflection-type efficiency super-thin beam splitter in the embodiment of the present invention 1.
Fig. 4 is a kind of structure master of the structural unit of all dielectric reflection-type efficiency super-thin beam splitter in the embodiment of the present invention 1
View.
Fig. 5 is a kind of structure top view of all dielectric reflection-type efficiency super-thin beam splitter in the embodiment of the present invention 1.
Fig. 6 is that a kind of structure of the structural unit of all dielectric reflection-type efficiency super-thin beam splitter is bowed in the embodiment of the present invention 1
View.
Fig. 7 is central wavelength is 632.8 nanometers in the embodiment of the present invention 1 planar light (400~800nm) by high-efficiency tandem
Reflectance curve figure right above reflector when vertical incidence.
The single plane light that Fig. 8 is a length of 632.8 nanometers of 1 medium wave of the embodiment of the present invention is by all dielectric reflection-type efficiency super-thin
Reflected phase (solid black lines) and reflected amplitude (dash-dotted gray line) curve graph right above beam splitter when vertical incidence.
The single plane light that Fig. 9 is a length of 632.8 nanometers of 1 medium wave of the embodiment of the present invention is by all dielectric reflection-type efficiency super-thin
Right above beam splitter when vertical incidence, the normalization electric field energy distributed effect figure of reflected light.
Figure 10 is that a length of 632.8 nanometers of 1 medium wave of the embodiment of the present invention of single plane light is efficiently surpassed by all dielectric reflection-type
Right above thin beam splitter when vertical incidence, the Ey electric-field intensity distribution figure of the scattering light of the super surface of gradient, dotted line defines wave
Before.
Figure 11 is that a length of 632.8 nanometers of 1 medium wave of the embodiment of the present invention of single plane light is efficiently surpassed by all dielectric reflection-type
Right above thin beam splitter when vertical incidence, the normalization electric field energy scatter chart of reflected light.
Figure 12 is a length of 400-800 nanometers of the light of 1 medium wave of the embodiment of the present invention by all dielectric reflection-type efficiency super-thin beam splitting
Right above device when vertical incidence, the reflectance curve figure of reflected light.
Description of symbols: 1- silicon nano-pillar array structure, 10- silicon nano-pillar, 2- magnesium fluoride Multi-media transport layer, 3,5,7-
High refractive index silicon dielectric layer, 4,6,8- low-refraction magnesium fluoride dielectric layer, 9- silicon base.
Specific embodiment
In view of deficiency in the prior art, inventor is studied for a long period of time and is largely practiced, and is able to propose of the invention
Technical solution.The technical solution, its implementation process and principle etc. will be further explained as follows.But it should manage
Solution, within the scope of the present invention, each technical characteristic of the invention and specifically described in below (e.g. embodiment) each technical characteristic
Between can be combined with each other, to form a new or preferred technical solution.Due to space limitations, I will not repeat them here.
A kind of all dielectric reflection-type efficiency super-thin beam splitter that the one aspect of the embodiment of the present invention provides comprising structure
Cell array, and each structural unit therein includes:
High-efficiency tandem reflector has and is based on Distributed Bragg Reflection structure (distributed Bragg
Reflection, DBR) structure；Multi-media transport layer is arranged on high-efficiency tandem reflector；And media feature layer, it sets
It sets on Multi-media transport layer, and the nano-pillar array structure including periodization.
Further, the period of each structural unit is 250nm, is closely connected between unit and unit, distance zero；But
It is the multi-layer film structure of silicon nano-pillar of each structural unit comprising top layer and lower layer, wherein multi-layer film structure is long and wide
All it is the square of 250nm, is not spaced to each other, is connected with each other, and the silicon nano-pillar of top layer is received in structural unit center
The distance between meter Zhu is related with structural unit period and diameter itself, and distance is to subtract adjacent two in the structural unit period to receive
The sum of radius of meter Zhu (d=p- (r1+r2)), standoff distance subtracts a nanometer column diameter equal to the structural unit period.
Further, (also referred to as " class distributed Bragg is anti-for the structure based on Distributed Bragg Reflection structure
Penetrate structure ", structure and Distributed Bragg Reflection here is slightly different in structure, particularly as be will be anti-according to distributed Bragg
The reflector for penetrating the design formula design of structure is combined with the super surface texture in upper layer, then a kind of multilayer obtained after optimizing
Membrane structure) it include being tied by limited high refractive index medium layer and the periodical of limited alternately laminated formation of low refractive index dielectric layer
Structure, and the optical thickness of the high refractive index medium layer, low refractive index dielectric layer is the 1/4 of center reflection wavelength.
Further, it is described based on the high-efficiency tandem reflector of Distributed Bragg Reflection structure by such as silicon, germanium, two
The low refractive index dielectrics layer such as the high index dielectric layer such as titanium oxide and magnesium fluoride, silica, sapphire, zirconium oxide with
Lamination is alternately arranged composition periodic structure to the mode of " ABAB " up and down, and the optical thickness of every layer material is center reflection wavelength
1/4.Therefore it is a kind of quarter-wave multilayer system, is equivalent to simple one group of photonic crystal.Since frequency falls in energy gap
Electromagnetic wave in range can not penetrate, and the reflectivity of Bragg mirror is up to 99% or more.It is generally used for promoting reflective light
In terms of the efficiency for learning device, it does not have the absorption problem of metallic mirror, and can be through the refractive index or thickness for changing material
To adjust energy gap position.Traditional metal is replaced to make device using this high-efficiency reflective structure for being suitable for service band optimized
The mirror surface of part can greatly improve the reflection efficiency of device.
Further, the high refractive index medium layer with a thickness of 42nm~62nm.
Further, the low refractive index dielectric layer with a thickness of 80nm~120nm.
In the present invention, the material of the Multi-media transport layer is the low refractions such as magnesium fluoride, silica, sapphire and zirconium oxide
Rate translucent material, since magnesium fluoride refractive index is minimum and light transmission is good, preferably magnesium fluoride, with a thickness of 40nm~
60nm。
In the present invention, the material of the media feature layer is the semiconductor materials such as silicon, GaAs or germanium, due to the production of silicon
Technique is more mature, and cheap.Therefore preferably silicon, with a thickness of 40nm~60nm.
In some embodiments, the nano-pillar array structure includes periodically alternately arranged limited diameter (length and width
Degree) relatively large cylinder (or as broad as long cube) and limited diameter (long width) relatively small cylinder (or grow
The equal cube of width), and limited diameter (long width) relatively large cylinder (or as broad as long cube)
Meet this Nie of broad sense with the queueing discipline of limited diameter (long width) relatively small cylinder (or as broad as long cube)
Ear law.Further, the nano-pillar array structure of the periodization includes alternately arranged limited first array and limited
A second array, every one first array, which is arranged by the relatively large cylinder of limited diameter along two or more parallel lines, to be formed, often
One second array is arranged along two or more parallel lines by the relatively small cylinder of limited diameter and is formed, and every one first array
It is parallel to each other with each second array.
Further, in the nano-pillar array structure diameter of the relatively large cylinder of diameter may be less than or equal to it is described
The period of structural unit, the relatively small cylinder of diameter diameter be necessarily less than the period of the structural unit.Also that is, the quarter
The nanostructure size lost in media feature layer is necessarily less than the unit period.The selection of structural parameters is with the reflection of target wave band
Subject to efficiency maximum and beam splitting better performances.
Further, the nano-pillar array structure include in the form of " AABB " periodically alternately arranged first cylinder with
Second cylinder.
It is described to etch the straight by designing according to broad sense Si Nieer law of the nano-pillar array structure in media feature layer
The relatively large cylinder of diameter (alternatively referred to as big cylinder) is alternately arranged with the relatively small cylinder of diameter (alternatively referred to as small column)
It constitutes.For different wave length, changes body diameter, can get good beam splitting function, the diameter of the relatively large cylinder of diameter
For 160nm~240nm, the diameter of the relatively small cylinder of diameter is 15nm~60nm, and cylinder height is 40nm~70nm.
Further, the diameter of the relatively large cylinder of the diameter is 180nm~240nm, and the diameter is relatively
The diameter of small cylinder is 15nm~30nm, the height of the relatively large cylinder of the diameter and/or the relatively small cylinder of diameter
Degree is 40nm~60nm.
Further, the relatively large cylinder of the diameter, the relatively small cylinder of diameter are cylindrical body or cube.
Further, the cylinder is respectively positioned on the center of structural unit, the distance between cylinder and structural unit period and diameter itself
Related, distance is to subtract the sum of the adjacent radius of two cylinders (d=p- (r in the structural unit period1+r2)。
Further, in all dielectric reflection-type efficiency super-thin beam splitter, period of each structural unit be 180nm~
250nm.The advantages of this group of Optimal Parameters can make structure reach wave band most wide, beam splitting better performances.
Further, all dielectric reflection-type efficiency super-thin beam splitter further includes substrate, the high-efficiency tandem reflector
It covers in the substrate.
Further, the material of the substrate includes the semiconductor medium material that silicon, gallium nitride etc. are easily integrated.Due to silicon
The relatively inexpensive easy acquisition of substrate, therefore preferably silicon chip.
In the present invention, the nano-pillar array structure of periodization arrangement is etched in semiconductor medium functional layer, in etching
It needs to guarantee that slit cuts through dielectric layer in the process.
Further, the corresponding service band of all dielectric reflection-type efficiency super-thin beam splitter structure parameter is visible light
Wave band, the service band can be modulated according to the selection of structural parameters.
In conclusion all dielectric reflection-type efficiency super-thin beam splitter provided by the invention has excellent beam splitting performance, energy
It is enough that the visible light of normal incidence is separated into two beam emergent lights, and there is very high reflection efficiency, wave band is wider, reflection efficiency
In 450nm-760nm wave band averagely 90% or more, reflection efficiency can reach 94.8% at 632.8nm, achieves and expects not
The technical effect arrived；Meanwhile all dielectric reflection-type efficiency super-thin beam splitter structure advantages of simple provided by the invention, it is ultra-thin light
Easy of integration, low power consumption and low cost is relatively easy to make, and the dimensional parameters of nano-pillar array structure are adjustable to adapt to entire visible light
Wave band, preparation method and existing semiconductor fabrication process are completely compatible；It overcomes the prior art and needs cumbersome preparation process
The defect of beam splitter can just be obtained.
The embodiment of the present invention another aspect provides the preparation sides of aforementioned all dielectric reflection-type efficiency super-thin beam splitter
Method comprising: it is anti-that high-efficiency tandem in substrate superimposed layer is alternatively formed with high refractive index medium material and low refractive index dielectric material
Emitter；
Multi-media transport layer is set on the high-efficiency tandem reflector；
Media feature layer is set on the Multi-media transport layer, and processing forms periodization in the media feature layer
Nano-pillar array structure.
Further, the preparation method include: be formed on the substrate using magnetron sputtering technology it is described efficiently folded
Layer reflector.
Further, the preparation method include: using magnetron sputtering technology on the high-efficiency tandem reflector
Form the Multi-media transport layer.
Further, the preparation method includes: at least using chemical vapour deposition technique on the Multi-media transport layer
Form the media feature layer.
Further, the preparation method includes: photoresist to be coated on the media feature layer, and expose using electron beam
Light technology carves cyclic array photoresist structure, is carved later using inductive couple plasma technology to media feature layer
Erosion makes its patterning, and removal remains in the photoresist on the media feature layer, to process the nanometer of the periodization
Pillar array structure.Wherein, in some more specifically embodiments, the preparation method may include:
Firstly, successively alternately plating low refractive index dielectric material and the high refraction in substrate using the method for magnetron sputtering plating
Rate dielectric material is to be prepared class Distributed Bragg Reflection (distributed Bragg reflection, DBR)
High-efficiency tandem reflector reuses the method for magnetron sputtering plating in class Distributed Bragg Reflection (distributed Bragg
Reflection, DBR) high-efficiency tandem reflector above plating transmission medium layer formed by low-refraction translucent material, reuse
Chemical vapour deposition technique grows layer of semiconductor function medium layer on transmission medium layer.It is then coated with a layer photoresist, benefit
The nano-pillar for carving size diameter with electron beam lithography reuses anti-in " AABB " alternately arranged array photoresist structure
It answers ion beam technology to perform etching function medium layer, makes its patterning, then remove residual photoresist and obtain all dielectric reflection
Type efficiency super-thin beam splitter.
Further, after growing semiconductor medium functional layer using chemical vapour deposition technique, focusing is directlyed adopt
Ion beam etch process obtains all dielectric reflection-type efficiency super-thin beam splitter.
Wherein, in the above-mentioned technical solutions, it directly exposes and develops using electron beam, with inductively coupled plasma etching light
Photoresist removes residual photoresist using acetone.
In conclusion preparation method raw material sources of the invention are wide, preparation is simple, compared with prior art financial resources, the time at
This is lower；And it has excellent performance, in optical sensor system, advanced nano-photon device and integrated optics system, has
Very big application value.
The other side of the embodiment of the present invention additionally provides aforementioned all dielectric reflection-type efficiency super-thin beam splitter in preparation
Application in optical sensor system, nano-photon device or integrated optics system.
Below in conjunction with attached drawing and more specifically embodiment makees further clear, complete solution to technical solution of the present invention
Release explanation.
Embodiment 1
Shown in Figure 1, a kind of all dielectric reflection-type efficiency super-thin beam splitter includes diameter by design in the present embodiment
Silicon nano-pillar 10 the silicon nano-pillar array structure 1 to be formed, magnesium fluoride Multi-media transport layer are alternately arranged in the way of " AABB "
2, the high refractive index silicon dielectric layer 3,5,7 of class dbr structure high-efficiency tandem reflector is constituted, it is anti-to constitute class dbr structure high-efficiency tandem
The low-refraction magnesium fluoride dielectric layer 4,6,8 of emitter, silicon base 9.A branch of visible light (450nm -760nm) from top device just
Upper vertical is incident on all dielectric reflection-type efficiency super-thin beam splitter, is two beams similarly visible light, the frequency of light by high-efficiency reflective
Rate and polarization direction do not change, as all dielectric reflection-type efficiency super-thin beam splitter.
Referring to fig. 2, the cellular construction stereoscopic schematic diagram of all dielectric reflection-type efficiency super-thin beam splitter of the present embodiment is constituted；
Including silicon nano-pillar 10, magnesium fluoride Multi-media transport layer 2 constitutes the high refractive index silicon medium of class dbr structure high-efficiency tandem reflector
Layer 3,5,7 constitutes the low-refraction magnesium fluoride dielectric layer 4,6,8 of class dbr structure high-efficiency tandem reflector, silicon base 9.It is a branch of can
Light-exposed (450nm -760nm) impinges perpendicularly on the unit of all dielectric reflection-type efficiency super-thin beam splitter right above top device
Structure, when other parameters immobilize, the phase and amplitude of reflected light can become with the variation of the diameter of silicon nano-pillar
Change, but the frequency of light and polarization direction do not change, as the cellular construction of all dielectric reflection-type efficiency super-thin beam splitter.
Referring to Fig. 3 and Fig. 4, the main view and unit knot of all dielectric reflection-type efficiency super-thin beam splitter of the present embodiment are constituted
Structure main view.Wherein, silicon nano-pillar height H1=40nm~70nm, Multi-media transport layer be magnesium fluoride, silica, sapphire,
The low refractive index dielectrics such as zirconium oxide are constituted, with a thickness of 40nm~60nm.The highly efficient stacked reflector constituted is class distribution Bradley
Lattice reflect (distributed Bragg reflection, DBR) structure, such as silicon, titanium dioxide high refractive index medium height
For HH=42~62nm, composition high-efficiency tandem reflector are class Distributed Bragg Reflection (distributed Bragg
Reflection, DBR) the low refractive index dielectrics metal layer height such as structure such as magnesium fluoride, silica, sapphire, zirconium oxide is
HL=80~120nm.
It is the top view of all dielectric reflection-type efficiency super-thin beam splitter of the present embodiment referring to Fig. 5.The etching is in medium
Nano-pillar array structure in functional layer (can also be claimed by the relatively large cylinder of the diameter designed according to broad sense snell law
For big cylinder) with the relatively small cylinder of diameter (alternatively referred to as small column) be alternately arranged composition.For different wave length, change circle
Column diameter can get good beam splitting function, and the diameter of the relatively large cylinder of diameter is 160nm~240nm, and diameter is relatively
The diameter of small cylinder is 15nm~60nm.
Referring to Fig. 6, for constitute the present embodiment all dielectric reflection-type efficiency super-thin beam splitter cellular construction top view.It receives
The period of rice pole unit structure is P=180nm~250nm；The diameter of nano-pillar is D=0nm~250nm.Firstly, using magnetic control
Successively alternately plating low refractive index dielectric and high refractive index medium are distributed the method for sputter coating to which class be prepared on substrate
The high-efficiency tandem reflector of formula Bragg reflection (distributed Bragg reflection, DBR), reuses magnetron sputtering
High-efficiency tandem of the method for plated film at class Distributed Bragg Reflection (distributed Bragg reflection, DBR) is anti-
Plating forms transmission medium layer by low-refraction translucent material above emitter, reuses chemical vapour deposition technique on transmission medium layer
Grow layer of semiconductor function medium layer.It is then coated with a layer photoresist, carves size diameter using electron beam lithography
Nano-pillar be in " AABB " alternately arranged array photoresist structure, reuse reactive ion beam technique to function medium layer carry out
Etching, makes its patterning, then removes residual photoresist and obtains all dielectric reflection-type efficiency super-thin beam splitter.
The production method of above-mentioned all dielectric reflection-type efficiency super-thin beam splitter, includes the following steps:
(1) dirty point and the greasy dirt on cleaning removal surface are carried out to make substrate surface have preferable cleaning to base material
Degree and adhesion strength；
(2) the low of specific thicknesses is successively alternately plated according to the range of operation wavelength in substrate using ion beam sputter depositing
Index dielectric material (such as magnesium fluoride, silica, sapphire, zirconium oxide) and high refractive index medium material (such as silicon, dioxy
Change titanium etc.) to which the efficient of class Distributed Bragg Reflection (distributed Bragg reflection, DBR) be prepared
Lamination reflector；
(3) using the method for magnetron sputtering plating in class Distributed Bragg Reflection (distributed Bragg
Reflection, DBR) high-efficiency tandem reflector above plating by low-refraction translucent material (such as magnesium fluoride, silica, indigo plant
Jewel, zirconium oxide etc.) Multi-media transport layer of the formation with a thickness of 40~70nm, preferably 40~60nm；Wherein, Multi-media transport layer
Thickness is also possible to 70nm, though device can work at this time, but effect is poor, and efficiency is lower；
(4) semiconductor that a layer thickness is 40~70nm is grown on Multi-media transport layer using chemical vapour deposition technique to be situated between
Matter functional layer (such as silicon, titanium dioxide)；
(5) a upper layer photoresist (PMMA) is coated with using spin-coating method；
It is etched using ion beam (IBE) technique, then removes residual photoresist and obtain medium nanometer grating；
(6) photoresist is exposed using electron beam exposure photoetching technique, is developed later with developer solution, obtained big
The nano-pillar of minor diameter is in " AABB " alternately arranged photoresist array structure；
(7) media feature layer is carved using photoresist array structure as exposure mask using inductively coupled plasma etching technique
Erosion, makes its patterning；
(8) etched sample is put into the beaker for filling acetone, it is anti-that ultrasound removal residual photoresist obtains all dielectric
Emitting efficiency super-thin beam splitter.
Fig. 7 is that the reflection efficiency curve graph for calculating light field is simulated using FDTD Solution (Canada) software, is selected
3D mode building structure, is arranged periodic boundary condition in the horizontal direction.In vertical direction since a variety of media exist, boundary
Condition utilizes perfect domination set, and analog light source is right above plane wave is arranged at the top of highly efficient stacked reflector, and wave-length coverage is
400nm~800nm, central wavelength 632.8nm.It can be seen from figure 7 that but plane wave vertical irradiation in highly efficient stacked reflection
When on device, in the wave-length coverage into 300nm of 500nm~800nm, the reflection efficiency of light is 90% or more, in central wavelength
The vicinity 632.8nm is about 98%, reaches as high as 99%, this absolutely proves the highly efficient stacked reflector of all dielectric designed by this case
Have good light reflecting properties in ultra wide band range, is fully able to that substitution gold, platinum, that the noble metals such as silver do performance is steady
Fixed reflecting layer and there is more good effect and cheap cost.
Fig. 8 is that the phase and amplitude that calculate light field are simulated using FDTD Solution (Canada) software, selects 3D mould
Formula building structure, is arranged periodic boundary condition in the horizontal direction.In vertical direction since a variety of media exist, boundary condition
Using perfect domination set, analog light source is right above plane wave is arranged at the top of the efficient beam splitter of all dielectric reflection-type, and wavelength is
632.8nm.For 632.8 nanometers of structure optimization and performance evaluation, work as λ0When=632.8nm: p=0.4 λ0=250nm, H1=
60nm, H2=50nm, HH=52nm, HL=108nm.Table in the plane wave vertical incidence of x direction polarization to silicon nanometer pole unit
Face, the diameter for changing silicon nano-pillar are simultaneously scanned reflected phase and amplitude.It, can by changing if Fig. 7 is black shown in solid
The diameter of silicon nano-pillar provides the corresponding situation of function phase change on reflection of phase controlling under light-exposed vertical incidence, shows to be mentioned
Silicon nanometer pole unit (Fig. 2) out has splendid phase-modulation effect.From phase response curve as can be seen that when diameter is distinguished
When for 60nm and 240nm, reflected phase is respectively 144 ° and 324 °.Phase difference between both unit cells is approximately equal to
180°.Moreover, having the function of that two kinds of unit cells of 180 ° of phase differences can be used to construct 1 bit array to realize beam splitter.
Another key factor in need of consideration is the reflected amplitude of silicon nanometer pole unit, it directly affects the effect of entire optical element
Rate.Black dotted line in Fig. 7 shows reflected amplitude response when changing silicon nanometer column diameter, it is obvious that each silicon is received
For the reflected amplitude of rice pole unit 0.92 or more, this absolutely proves that our structure has high reflection efficiency.For 1
Corresponding reflected amplitude is 0.95 or so for position design (diameter=60nm, 240nm), it means that can obtain after integrated
Obtain a super surface beam splitter of the high all dielectric of reflection efficiency.
The single plane light that Fig. 9 is a length of 632.8 nanometers of the present embodiment medium wave is by all dielectric reflection-type efficiency super-thin beam splitting
Right above device when vertical incidence, the normalization electric field energy distributed effect figure of reflected light can from two-dimentional far-field radiation pattern
To incident single plane light after all dielectric reflection-type efficiency super-thin beam splitter, two clearly defined light have been clearly formed
Beam shows the super surface of medium to the beam splitting function of the visible light of single-frequency, single polarization direction.
Figure 10 is the scattering Ey electric-field intensity distribution figure of the super surface of gradient of simulation, and white dashed line defines wavefront, can
To find out, the medium nano-pillar of different-diameter can phase to reflected light and amplitude be modulated, by by diameter by designing
Medium nano-pillar not of uniform size is arranged with the form array of " AABB ", can make the launch angle of reflected light acquired character,
Analog result in figure are as follows: the angle of reflection of reflected plane wave is 39.3 °.
Figure 11 is depicted in λ0Under the x- polarizing light irradiation of=632.8nm, two the reflected beams on surface are surpassed for gradient
The x-z ablation energy distribution curve of far-field radiation.It can be seen from the figure that the main lobe energy of reflected light becomes due to interference cancellation
Very low, secondary lobe interference is mutually grown, and energy becomes high to replace main lobe to become key reflections light beam.
Inventor also calculates the device in the surface reflection efficiency of entire visible spectrum.As shown in figure 12, medium
The overall reflective efficiency in most of region of the super surface divided beam system from 550nm to 800nm is higher than 92%, and solid black point table
It is bright when the incident light of λ=632.8nm, the reflection of whole system is 94.8%, it means that low-down energy loss.Here
The design process of introduction is very simple, while being also innovation.Inventor devises a people with silicon nano-antenna inclusion enclave
The super surface of the medium made separates light beam in the proper direction.
Through the foregoing embodiment it can be found that all dielectric reflection-type efficiency super-thin beam splitter of the invention can join according to structure
Number is modulated service band, wherein the working efficiency in 450nm~800nm visible-range is greater than 90%.The present invention is by complete
Dielectric structure cell array composition, is covered in the high-efficiency tandem reflector of the class Distributed Bragg Reflection on substrate and covers
Cover the nano column array knot of the periodization of the Multi-media transport layer on high-efficiency tandem reflector and etching in media feature layer
Structure can not only carry out efficiently being divided work in the wavelength band of ultra-wide, and avoid the etching to metal, so that production
Technique is more convenient.In addition, inventor also refers to previous embodiment, with other raw materials for being listed in this specification and
Condition etc. is tested, and has equally been made with excellent beam splitting performance, can be separated into the visible light of normal incidence
Two beam emergent lights, and have that efficiency is higher, wave band is wider, structure is simple, ultra-thin light easy of integration, low power consumption and low cost, opposite
It is easy to make all dielectric reflection-type efficiency super-thin beam splitter of feature.
It should be noted that the terms "include", "comprise" or its any other variant are intended in the present specification
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence " including one ... ", it is not excluded that wrapping
Include in the process, method, article or equipment of the element that there is also other identical elements.
It should be appreciated that the above preferred embodiment is merely to illustrate the contents of the present invention, in addition to this, there are also other by the present invention
Embodiment, as long as those skilled in the art because of technical inspiration involved in the present invention, and use equivalent replacement or equivalent deformation
The technical solution that mode is formed is fallen within the scope of protection of the present invention.
Claims (19)
1. a kind of all dielectric reflection-type efficiency super-thin beam splitter, it is characterised in that including building block array, and it is therein every
A structural unit includes:
High-efficiency tandem reflector has the structure based on Distributed Bragg Reflection structure；
Multi-media transport layer is arranged on high-efficiency tandem reflector；And
Media feature layer is arranged on Multi-media transport layer, and the nano-pillar array structure including periodization.
2. all dielectric reflection-type efficiency super-thin beam splitter according to claim 1, it is characterised in that: described based on distribution
The structure of Bragg reflection structure includes alternately being superimposed the week formed by multipair high refractive index medium layer and low refractive index dielectric layer
Phase property structure, and the optical thickness of the high refractive index medium layer, low refractive index dielectric layer is the 1/4 of center reflection wavelength.
3. all dielectric reflection-type efficiency super-thin beam splitter according to claim 2, it is characterised in that: the high refractive index is situated between
The material of matter layer includes any one or two or more combinations in silicon, germanium and titanium dioxide；And/or the high refractive index
Dielectric layer with a thickness of 42nm~62nm.
4. all dielectric reflection-type efficiency super-thin beam splitter according to claim 2, it is characterised in that: the low-refraction is situated between
The material of matter layer includes any one or two or more combinations in magnesium fluoride, silica, sapphire and zirconium oxide；With/
Or, the low refractive index dielectric layer with a thickness of 80nm~120nm.
5. all dielectric reflection-type efficiency super-thin beam splitter according to claim 1, it is characterised in that: the Multi-media transport layer
Material include low-refraction light transmission medium material；Preferably, the low-refraction light transmission medium material includes magnesium fluoride, dioxy
Any one in SiClx, sapphire and zirconium oxide or two or more combinations；And/or the Multi-media transport layer with a thickness of
40nm~60nm.
6. all dielectric reflection-type efficiency super-thin beam splitter according to claim 1, it is characterised in that: the media feature layer
Material include semiconductor material；Preferably, the semiconductor material includes silicon and/or germanium；And/or the media feature layer
With a thickness of 40nm~60nm.
7. all dielectric reflection-type efficiency super-thin beam splitter according to claim 1, it is characterised in that: the nano column array
Structure includes the cylinder that periodically alternately arranged limited diameter is different, and the relatively large cylinder of limited diameter
Meet broad sense Si Nieer law with the queueing discipline of the relatively small cylinder of limited diameter.
8. all dielectric reflection-type efficiency super-thin beam splitter according to claim 1, which is characterized in that the periodization is received
Rice pillar array structure includes alternately arranged limited first array and limited second array, and every one first array is by limited
The relatively large cylinder of diameter arranges to be formed along two or more parallel lines, and each second array is relatively small by limited diameter
Cylinder arranges to be formed along two or more parallel lines, and every one first array is parallel to each other with each second array.
9. all dielectric reflection-type efficiency super-thin beam splitter according to claim 7 or 8, it is characterised in that: the nano-pillar
The diameter of the relatively large cylinder of diameter is not more than the period of the structural unit in array structure, and the diameter is relatively small
The diameter of cylinder is less than the period of the structural unit.
10. all dielectric reflection-type efficiency super-thin beam splitter according to claim 1 or 8, it is characterised in that: each structure list
The period of member is 180nm~250nm.
11. all dielectric reflection-type efficiency super-thin beam splitter according to claim 7 or 8, it is characterised in that: the diameter phase
Diameter to biggish cylinder is 160nm~240nm, and the diameter of the relatively small cylinder of diameter is 15nm~60nm, institute
The height for stating the relatively large cylinder of diameter and/or the relatively small cylinder of diameter is 40nm~70nm；Preferably, the diameter
The diameter of relatively large cylinder is 180nm~240nm, and the diameter of the relatively small cylinder of diameter is 15nm~30nm,
The height of the relatively large cylinder of the diameter and/or the relatively small cylinder of diameter is 40nm~60nm；And/or it is described straight
The relatively large cylinder of diameter, the relatively small cylinder of diameter are cylindrical body or cube；Preferably, between two neighboring cylinder
The period that distance is equal to each structural unit subtracts the sum of the radius of two neighboring cylinder.
12. all dielectric reflection-type efficiency super-thin beam splitter according to claim 1, it is characterised in that it further include substrate, institute
High-efficiency tandem reflector is stated to cover in the substrate.
13. all dielectric reflection-type efficiency super-thin beam splitter according to claim 12, it is characterised in that: the material of the substrate
Matter includes semiconductor medium material；Preferably, the semiconductor medium material includes silicon and/or gallium nitride.
14. all dielectric reflection-type efficiency super-thin beam splitter according to claim 1, it is characterised in that: all dielectric is anti-
The corresponding service band of emitting efficiency super-thin beam splitter is visible light wave range.
15. the preparation method of all dielectric reflection-type efficiency super-thin beam splitter, feature described in any one of claim 1-14
Be include:
High-efficiency tandem reflector is alternatively formed in substrate superimposed layer with high refractive index medium material and low refractive index dielectric material；
Multi-media transport layer is set on the high-efficiency tandem reflector；
Media feature layer is set on the Multi-media transport layer, and processing forms the nanometer of periodization in the media feature layer
Pillar array structure.
16. preparation method according to claim 15, characterized by comprising: using magnetron sputtering technology in substrate
It is upper to form the high-efficiency tandem reflector；And/or it is formed on the high-efficiency tandem reflector using magnetron sputtering technology
The Multi-media transport layer.
17. preparation method according to claim 15, characterized by comprising: at least existed using chemical vapour deposition technique
The media feature layer is formed on the Multi-media transport layer.
18. preparation method according to claim 15, characterized by comprising: form pattern on the media feature layer
The photoresist mask of change, and media feature layer is performed etching using inductively coupled plasma etching technology, to process institute
The nano-pillar array structure for the periodization stated.
19. all dielectric reflection-type efficiency super-thin beam splitter described in any one of claim 1-14 is in preparing optical sensing system
Application in system, nano-photon device or integrated optics system.
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