CN109728199A - Reflecting electrode and preparation method thereof, Organic Light Emitting Diode and display device - Google Patents
Reflecting electrode and preparation method thereof, Organic Light Emitting Diode and display device Download PDFInfo
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Abstract
It include: conductive layer and the first reflecting layer present disclose provides a kind of reflecting electrode；First reflecting layer includes: along the first medium layer that is arranged alternately of direction and second dielectric layer away from conductive layer, and the refractive index of first medium layer is greater than the refractive index of second dielectric layer, and the material of first medium layer and second dielectric layer is non-magnetic material；First reflecting layer is configured that when being incident upon the first reflecting layer from the first reflecting layer towards the surface of conductive layer side when light, in the first reflecting layer, for the light reflected on interface between the first medium layer and second dielectric layer of arbitrary neighborhood, constructive interference can occur when they return to surface of first reflecting layer towards conductive layer side.The disclosure additionally provides preparation method, Organic Light Emitting Diode and the display device of a kind of reflecting electrode.
Description
Technical field
This disclosure relates to field of display technology, in particular to reflecting electrode and preparation method thereof, Organic Light Emitting Diode and
Display device.
Background technique
In Organic Light Emitting Diode (Organic Light Emitting Diode, the abbreviation using emission structure at top
OLED in), the bottom reflecting electrode of most products is using the three-layered node for having conductive layer, metallic reflector, barrier layer
Structure；Wherein, conductive layer is for transmitting electric signal, and metallic reflector is for reflecting light, and barrier layer is for preventing gold
Belong to atom to spread downwards.
It finds in practical applications, when the light that OLED is issued penetrates conductive layer directive metallic reflector, photon can be with
Oscillatory Coupling occurs for the electronics in metallic reflector, so that generating one kind is called surface plasmon-polarition (Surface
Plasmon Polariton, abbreviation SPP) wave, SPP can constantly decay when along metallic reflection Es-region propagations, while band exposes
Son.Stated differently, since metallic reflector, too close to organic luminous layer, partial photonic is inhaled by the electronics in metallic reflector
It receives, so as to cause electronic, and forms SPP, photon can quench in this process.By actually detected discovery, usually
It has 36% light to be depleted due to the SPP effect of metal, that is, there is more serious light loss.
Summary of the invention
The disclosure aims to solve at least one of the technical problems existing in the prior art, propose a kind of reflecting electrode and its
Preparation method, Organic Light Emitting Diode and display device.
In a first aspect, the embodiment of the present disclosure provides a kind of reflecting electrode, comprising: conductive layer and the first reflecting layer；
First reflecting layer includes: to be situated between along the first medium layer and second that the direction away from the conductive layer is arranged alternately
Matter layer, the refractive index of the first medium layer are greater than the refractive index of the second dielectric layer, the first medium layer and described the
The material of second medium layer is non-magnetic material；
First reflecting layer be configured that when light be incident upon from the first reflecting layer towards the surface of conductive layer side it is described
When the first reflecting layer, in first reflecting layer, for the first medium layer of arbitrary neighborhood and the second dielectric layer
Between the light that reflects on interface, phase can occur when they return to surface of first reflecting layer towards the conductive layer side
Long interference.
In some embodiments, the thickness h of the first medium layer1Range include:
The thickness h of the second dielectric layer2Range include:
Wherein, n1And n2The refractive index of respectively described first medium layer and the second dielectric layer, λ0It is penetrated to preset
To the wavelength of the light in first reflecting layer,For preset coefficient,
In some embodiments, the refractive index of the first medium layer is greater than 1.5, and the refractive index of the second dielectric layer is small
In 1.5.
In some embodiments, the material of the first medium layer includes: zinc sulphide；
The material of the second dielectric layer includes: hexafluoro sodium aluminate.
In some embodiments, the material of the conductive layer includes: transparent conductive material.
In some embodiments, further includes: the second reflecting layer, second reflecting layer are located at first reflecting layer backwards
The material of the side of the conductive layer, second reflecting layer includes: metal material.
In some embodiments, the quantity of the first medium layer and the second dielectric layer is equal；
The range of the quantity Q of the first medium layer includes: [3,5].
Second aspect, the embodiment of the present disclosure provide a kind of Organic Light Emitting Diode, comprising: such as above-mentioned reflecting electrode.
The third aspect, the embodiment of the present disclosure provide a kind of display device, comprising: such as above-mentioned Organic Light Emitting Diode.
Fourth aspect, the embodiment of the present disclosure provide a kind of preparation method of reflecting electrode, comprising:
Conductive layer is formed in underlay substrate side；
In the first medium that conductive layer deviates from the side of underlay substrate and is alternatively formed along the direction away from the conductive layer
Layer and second dielectric layer, to obtain the first reflecting layer, wherein the refractive index of the first medium layer is greater than the second dielectric layer
Refractive index, the material of the first medium layer and the second dielectric layer is non-magnetic material；
Alternatively,
Underlay substrate side and along away from the underlay substrate direction be alternatively formed first medium layer and second be situated between
Matter layer, to obtain the first reflecting layer, wherein the refractive index of the first medium layer is greater than the refractive index of the second dielectric layer, institute
The material for stating first medium layer and the second dielectric layer is non-magnetic material；
Conductive layer is formed backwards to the side of the underlay substrate in first reflecting layer；
Wherein, first reflecting layer, which is configured that, injects when light from the first reflecting layer towards the surface of conductive layer side
When to first reflecting layer, in first reflecting layer, for the first medium layer of arbitrary neighborhood and described second
The light reflected on interface between dielectric layer, can when they return to surface of first reflecting layer towards the conductive layer side
Constructive interference occurs.
Detailed description of the invention
Fig. 1 is a kind of schematic cross-section for reflecting electrode that the embodiment of the present disclosure one provides；
Fig. 2 is optical path diagram in the first reflecting layer；
Fig. 3 is a kind of schematic cross-section for reflecting electrode that the embodiment of the present disclosure three provides；
Fig. 4 a is a kind of preparation method flow chart for reflecting electrode that the embodiment of the present disclosure four provides；
Fig. 4 b is the preparation method flow chart for another reflecting electrode that the embodiment of the present disclosure four provides；
Fig. 5 is a kind of schematic cross-section for Organic Light Emitting Diode that the embodiment of the present disclosure four provides.
Specific embodiment
To make those skilled in the art more fully understand the technical solution of the disclosure, the disclosure is mentioned with reference to the accompanying drawing
Reflecting electrode of confession and preparation method thereof, Organic Light Emitting Diode and display device are described in detail.
Embodiment one
Fig. 1 is a kind of schematic cross-section for reflecting electrode that the embodiment of the present disclosure one provides, as shown in Figure 1, the reflection is electric
Pole includes: conductive layer 1 and the first reflecting layer 2；First reflecting layer 2 includes: first be arranged alternately along the direction away from conductive layer 1
Dielectric layer 21 and second dielectric layer 22, the refractive index of first medium layer 21 are greater than the refractive index of second dielectric layer 22, first medium
Layer 21 and the material of second dielectric layer 22 are non-magnetic material.
Wherein, the first reflecting layer 2 is configured that when light from the first reflecting layer 2 towards the surface of 1 side of conductive layer (also known as
For " incidence surface ") when being incident upon the first reflecting layer 2, in the first reflecting layer 2, the first medium layer 21 for arbitrary neighborhood and
The light reflected on interface between second medium layer 22, the energy when they return to surface of first reflecting layer 2 towards 1 side of conductive layer
Constructive interference enough occurs.
It should be noted that the case where second dielectric layer 22 is in contact with conductive layer 1 in the first reflecting layer 2 in attached drawing is only risen
To exemplary effect, limitation will not be generated to the technical solution of the disclosure, be also possible to first medium layer 21 in the disclosure
It is in contact with conductive layer 1.
In the technical solution of the disclosure, when light is incident upon the first reflecting layer 2 from incidence surface, in the first reflecting layer 2
Interior, the interface between first medium layer 21 and second dielectric layer 22 can reflect light, and the light that each interface reflects
Constructive interference can occur when being back to incidence surface, so that the first reflecting layer 2 has light reflex；At the same time, due to
First medium layer 21 and the material of second dielectric layer 22 are non-magnetic material (relative permeability), therefore when photon reaches each medium
SPP phenomenon will not occur when layer surface, and then the problem of be not in photon quenching.It can be seen that first in the disclosure is anti-
Penetrating layer 2 can be while realizing light reflection, moreover it is possible to light loss caused by effectively avoiding because of SPP phenomenon.
The reflecting electrode that the disclosure provides can not only transmit electric signal, realize light reflection, moreover it is possible to effectively avoid because of SPP
Light loss caused by phenomenon, so as to effectively promote the light extraction efficiency of OLED.
It should be noted that the first reflecting layer 2 shown in attached drawing includes 3 first medium layer 21 and 3 second dielectric layer
22 the case where, only play the role of it is schematic, will not to the technical solution of the disclosure generate limitation.
In the disclosure, transparent conductive material, such as tin indium oxide (Formula I TO) is can be selected in conductive layer 1.
Preferably, the thickness h of first medium layer 211Range include:
The thickness h of second dielectric layer 222Range include:
Wherein, n1And n2The respectively refractive index of first medium layer 21 and second dielectric layer 22, λ0To preset directive
The wavelength of the light (light that OLED is issued) in one reflecting layer 2,For preset coefficient,
In the disclosure, by the above-mentioned setting to 22 film thickness of first medium layer 21 and second dielectric layer, it may make first
The light reflected on each interface in reflecting layer 2, when they return to front surface (table of first reflecting layer 2 towards 1 side of conductive layer
Face) when, constructive interference can occur.
It is further preferred thatValue is 0, at this time the thickness of first medium layer 21The thickness of second dielectric layer 22
DegreeAt this point, the light reflected on each interface in the first reflecting layer 2, when returning to front surface before them, each light
Phase is identical, and constructive interference is most obvious at this time；That is, uniform in the refractive index of first medium layer 21 and second dielectric layer 22, quantity
In the case where fixed, the overall reflectivity in the first reflecting layer 2 can reach extreme value at this time.At this point, the structure in the first reflecting layer 2 is Bradley
Lattice mirror structure.
The overall reflectivity in the first reflecting layer 2 in the disclosure is analyzed below in conjunction with attached drawing.In which it is assumed that the
The thickness degree of one dielectric layer 21The thickness of second dielectric layer 22Second dielectric layer 22 connects with conductive layer 1
Touching.
Fig. 2 is optical path diagram in the first reflecting layer 2, as shown in Fig. 2, light is incident to second medium from incidence surface
Incidence angle when layer 22 is θ0, the refraction angle after refracting to second dielectric layer 22 is θ1, light refracts to from second dielectric layer 22
Refraction angle after one dielectric layer 21 is θ2.During subsequent propagation, when light refracts to second medium from first medium layer 21
During layer 22, incidence angle θ2, refraction angle θ1；When light refracts to from second dielectric layer 22 mistake of first medium layer 21
Cheng Zhong, incidence angle θ1, refraction angle θ2。
For convenience of description, by a first medium layer 21 and positioned at it towards 1 side of conductive layer and adjacent one second
Dielectric layer 22, referred to as 1 " period ".
In the first reflecting layer 2,1 " period " feature matrix M2(h) are as follows:
M2(h)=A1B1……(1)
Wherein, i is imaginary unit.
In the first reflecting layer 2, the feature matrix M of N number of " period " (2N layers of dielectric layer)2N(Nh) are as follows:
Wherein, UNIt is Chebyshev polynomial of the second kind:
It is assumed that light vertical incidence is to the first reflecting layer 2, i.e. θ0=θ1=θ2=0 °, cos θ1=cos θ2=1；And due toIt then can abbreviation by above-mentioned formula (1) are as follows:
It can abbreviation by above-mentioned formula (2) are as follows:
In addition, it is also contemplated that reflection and first reflecting layer 2 of first reflecting layer 2 towards 1 one side surface of conductive layer are backwards
The reflection of 1 one side surface of conductive layer, the overall reflectivity R in the first reflecting layer 22NAre as follows:
Wherein, n3Refractive index for the medium being in contact with the first reflecting layer 2 backwards to 1 one side surface of conductive layer, n4For conduction
The refractive index of layer 1.
By above-mentioned analysis as it can be seen that when mono- timing of " period " quantity N, first medium layer 21 and second in the first reflecting layer 2
The ratio of the refractive index of dielectric layer 22Bigger, then the overall reflectivity in the first reflecting layer 2 is bigger；When in the first reflecting layer 2
The ratio of one dielectric layer 21 and the refractive index of second dielectric layer 22One timing, " period ", quantity N was bigger, then the first reflecting layer 2
Overall reflectivity it is bigger.
In the disclosure, optionally, the material selection refractive index of first medium layer 21 is greater than 1.5 material, second medium
Material of the material selection refractive index less than 1.5 of layer 22.
In addition, though " period " quantity N is bigger in the first reflecting layer 2, the overall reflectivity in the first reflecting layer 2 is bigger, but
Meeting is unfavorable for the lightening of OLED so that the integral thickness and quality in the first reflecting layer 2 increase.For this purpose, in the disclosure preferably,
The quantity in first reflecting layer 2 including " period " is 3~5, i.e. the quantity phase of first medium layer 21 and second dielectric layer 22
Deng, and the quantity Q of first medium layer 21 (second dielectric layer 22) meets Q ∈ [3,5], can realize the same of high reflectance at this time
When, guarantee the lightening of reflecting electrode.
Embodiment two
A kind of materialization scheme that the present embodiment is based on the above embodiment one, wherein the material of conductive layer 1 is ITO (folding
The rate of penetrating is about that 1.5), the material of first medium layer 21 is that (chemical formula ZnS, refractive index are about 2.3) second dielectric layer 22 to zinc sulphide
Material be hexafluoro sodium aluminate (Na3AlF6, refractive index is about 1.35) i.e. n1=2.3, n2=1.35.
In addition, presetting the wavelength X of the light in the first reflecting layer 2 described in directive0=550nm, the thickness of first medium layer 21
DegreeThe thickness of second dielectric layer 22
The overall reflectivity of first reflectance coating is as shown in table 1 below with " period " quantity situation of change.
| " period " quantity N | The overall reflectivity of first reflectance coating |
| 1 | 0.672 |
| 2 | 0.872 |
| 3 | 0.954 |
| 4 | 0.984 |
| 5 | 0.989 |
The overall reflectivity of 1. first reflectance coating of table changes table with " period " quantity
By above-mentioned table 1 as it can be seen that the overall reflectivity of first reflectance coating has reached higher when " period " quantity is 3
Hereafter level continues to increase " period " quantity N, the overall reflectivity Slow lifting of the first reflectance coating.
Embodiment three
Fig. 3 is a kind of schematic cross-section for reflecting electrode that the embodiment of the present disclosure three provides, as shown in figure 3, with aforementioned reality
Unlike applying in example, includes not only conductive layer 1 and the first reflecting layer 2 in reflecting electrode provided by the present embodiment, further include
Second reflecting layer 3 is below only described the second reflecting layer 3.
In the present embodiment, the second reflecting layer 3 is located at the first reflecting layer 2 backwards to the side of conductive layer 1, the second reflecting layer 3
Material include: metal material.In the present embodiment, by being provided with metal backwards to the side of conductive layer 1 in the first reflecting layer 2
The second reflecting layer 3 that material is constituted, can further promote the overall reflectivity of reflecting electrode.
It should be noted that reaching the second reflecting layer 3 since the first reflecting layer 2 can reflect most light
Light is seldom, although at this time in the presence of because caused by SPP phenomenon the phenomenon that light loss, because of light loss caused by SPP phenomenon
Measure (less than the light volume reflection in the second reflecting layer 3) seldom, therefore the available promotion of overall reflectivity of reflecting electrode.
In addition, the second reflecting layer 3 can also be arranged barrier layer backwards to the side of conductive layer 1 and (not show in the present embodiment
Out), to prevent the metallic atom in the second reflecting layer 3 from spreading.
Example IV
Fig. 4 a is a kind of preparation method flow chart for reflecting electrode that the embodiment of the present disclosure four provides, as shown in fig. 4 a, should
Reflecting electrode is the reflecting electrode that previous embodiment provides, which includes:
Step S101, conductive layer is formed in underlay substrate side.
Step S102, first for deviating from the side of underlay substrate in conductive layer and being alternatively formed along the direction away from conductive layer
Dielectric layer and second dielectric layer, to obtain the first reflecting layer, wherein the refractive index of first medium layer is greater than the folding of second dielectric layer
Penetrate rate, the material of first medium layer and second dielectric layer is non-magnetic material.
By the first reflecting layer obtained by step S102, it is configured that when light is from the first reflecting layer towards conductive layer
When the surface of side is incident upon the first reflecting layer, in the first reflecting layer, it is situated between for the first medium layer of arbitrary neighborhood and second
When they return to surface of first reflecting layer towards conductive layer side phase can occur for the light reflected on interface between matter layer
Long interference.
It should be noted that then further including after step s 102 when preparing reflecting electrode provided by embodiment three
In the step of the first reflecting layer forms the second reflecting layer backwards to the side of conductive layer.
Fig. 4 b is the preparation method flow chart for another reflecting electrode that the embodiment of the present disclosure four provides, as shown in Figure 4 b,
The reflecting electrode is the reflecting electrode that previous embodiment provides, which includes:
Step S201, first medium layer and the are alternatively formed in the side of underlay substrate and along the direction away from underlay substrate
Second medium layer, to obtain the first reflecting layer, wherein the refractive index of first medium layer is greater than the refractive index of second dielectric layer, and first is situated between
Matter layer and the material of second dielectric layer are non-magnetic material.
By the first reflecting layer obtained by step S201, it is configured that when light is from the first reflecting layer towards conductive layer
When the surface of side is incident upon the first reflecting layer, in the first reflecting layer, it is situated between for the first medium layer of arbitrary neighborhood and second
When they return to surface of first reflecting layer towards conductive layer side phase can occur for the light reflected on interface between matter layer
Long interference.
Step S202, conductive layer is formed backwards to the side of underlay substrate in the first reflecting layer.
It should be noted that then further including before step S201 when preparing reflecting electrode provided by embodiment three
In the step of side of underlay substrate forms the second reflecting layer, step S201 is formed by the first reflecting layer and is located at the second reflecting layer
Backwards to the side of underlay substrate.
In addition, to the specific descriptions of conductive layer in this present embodiment, the first reflecting layer, the second reflecting layer, reference can be made to aforementioned
Content in embodiment, details are not described herein again.
Embodiment five
Fig. 5 is a kind of schematic cross-section for Organic Light Emitting Diode that the embodiment of the present disclosure four provides, as shown in figure 5, should
OLED includes transmission electrode 5, reflecting electrode 4 and the organic function layer 6 between two electrodes, wherein reflecting electrode 4 is using upper
The reflecting electrode 4 of any offer in one~embodiment of embodiment three is provided, particular content can be found in the description in previous embodiment, this
Place repeats no more.
Transmission electrode 5 and organic function layer 6 are located at side of the conductive layer 1 backwards to the first reflecting layer 2, the material of transmission electrode 5
Material uses transparent conductive material, and organic function layer 6 includes at least organic luminous layer, and certain organic function layer 6 can also include using
In functional film layers such as hole/electron injecting layer, the hole/electronic barrier layers for improving carrier charge velocity.
Embodiment six
The embodiment of the present disclosure five provides a kind of display device, which includes OLED, which uses above-mentioned reality
The OLED of the offer of example five is provided.
It should be noted that display device in the present embodiment can for Electronic Paper, oled panel, mobile phone, tablet computer,
Any products or components having a display function such as television set, display, laptop, Digital Frame, navigator.
It is understood that embodiment of above is merely to illustrate that the principle of the disclosure and the exemplary implementation that uses
Mode, however the disclosure is not limited thereto.For those skilled in the art, in the essence for not departing from the disclosure
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as the protection scope of the disclosure.
Claims (10)
1. a kind of reflecting electrode characterized by comprising conductive layer and the first reflecting layer；
First reflecting layer includes: the first medium layer and second medium being arranged alternately along the direction away from the conductive layer
Layer, the refractive index of the first medium layer are greater than the refractive index of the second dielectric layer, the first medium layer and described second
The material of dielectric layer is non-magnetic material；
First reflecting layer is configured that when light is incident upon described first from the first reflecting layer towards the surface of conductive layer side
When reflecting layer, in first reflecting layer, between the first medium layer of arbitrary neighborhood and the second dielectric layer
When they return to surface of first reflecting layer towards the conductive layer side Xiang Changgan can occur for the light reflected on interface
It relates to.
2. reflecting electrode according to claim 1, which is characterized in that the thickness h of the first medium layer1Range include:
The thickness h of the second dielectric layer2Range include:
Wherein, n1And n2The refractive index of respectively described first medium layer and the second dielectric layer, λ0To preset directive institute
The wavelength of the light in the first reflecting layer is stated,For preset coefficient,
3. reflecting electrode according to claim 1, which is characterized in that the refractive index of the first medium layer is greater than 1.5, institute
The refractive index of second dielectric layer is stated less than 1.5.
4. reflecting electrode according to claim 1, which is characterized in that the material of the first medium layer includes: zinc sulphide；
The material of the second dielectric layer includes: hexafluoro sodium aluminate.
5. reflecting electrode according to claim 1, which is characterized in that the material of the conductive layer includes: electrically conducting transparent material
Material.
6. reflecting electrode according to claim 1, which is characterized in that further include: the second reflecting layer, second reflecting layer
Positioned at first reflecting layer backwards to the side of the conductive layer, the material in second reflecting layer includes: metal material.
7. any reflecting electrode in -6 according to claim 1, which is characterized in that the first medium layer and described second
The quantity of dielectric layer is equal；
The range of the quantity Q of the first medium layer includes: [3,5].
8. a kind of Organic Light Emitting Diode characterized by comprising the reflection electricity as described in any in the claims 1-7
Pole.
9. a kind of display device characterized by comprising the Organic Light Emitting Diode as described in the claims 8.
10. a kind of preparation method of the reflecting electrode as described in any in claim 1-7 characterized by comprising
Conductive layer is formed in underlay substrate side；
Conductive layer away from the side of underlay substrate and along away from the conductive layer the first medium layer that is alternatively formed of direction and
Second dielectric layer, to obtain the first reflecting layer, wherein the refractive index of the first medium layer is greater than the folding of the second dielectric layer
Penetrate rate, the material of the first medium layer and the second dielectric layer is non-magnetic material；
Alternatively,
Underlay substrate side and be alternatively formed first medium layer and second dielectric layer along away from the direction of the underlay substrate,
To obtain the first reflecting layer, wherein the refractive index of the first medium layer is greater than the refractive index of the second dielectric layer, described the
One dielectric layer and the material of the second dielectric layer are non-magnetic material；
Wherein, first reflecting layer, which is configured that, is incident upon institute from the first reflecting layer towards the surface of conductive layer side when light
When stating the first reflecting layer, in first reflecting layer, for the first medium layer of arbitrary neighborhood and the second medium
The light reflected on interface between layer, can occur when they return to surface of first reflecting layer towards the conductive layer side
Constructive interference；
Conductive layer is formed backwards to the side of the underlay substrate in first reflecting layer.
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| WO2021051498A1 (en) * | 2019-09-16 | 2021-03-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display apparatus |
| CN114035374A (en) * | 2021-11-24 | 2022-02-11 | 惠州视维新技术有限公司 | Optical film and display module |
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| CN103730601A (en) * | 2013-12-26 | 2014-04-16 | 京东方科技集团股份有限公司 | Bragg reflection reflector distribution structure, preparation method thereof and organic light-emitting diode structure |
| CN108140745A (en) * | 2015-09-21 | 2018-06-08 | 沙特基础工业全球技术公司 | For the distributed Bragg reflector on the color conversion layer with microcavity of Blue OLED illumination application |
| CN107528008A (en) * | 2017-08-18 | 2017-12-29 | 京东方科技集团股份有限公司 | Organic light emitting display and preparation method, display device |
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Application publication date: 20190507 |