KR20130027728A - Flexible organic light emitting diode and manufacturing method thereof - Google Patents

Abstract

PURPOSE: A flexible organic light emitting diode and a manufacturing method thereof are provided to improve a charge injection property by forming a conductive oxide layer on the upper side of a DBR(Distributed Bragg Reflector) electrode to sufficiently secure electric conductivity. CONSTITUTION: A DBR electrode(200) is formed on an opaque substrate(100). A hole layer(400) is formed on the upper side of the DBR electrode. A conductive oxide layer(300) is formed between the DBR electrode and the hole layer. An electron layer(600) is formed on the hole layer. A light emitting layer(500) is formed between the hole layer and the electron layer. A light emitting layer is made of organic materials and emits light by a combination of electrons and holes. A transparent electrode(700) is formed on the upper side of the electron layer.

Description

Flexible organic light emitting diode and its manufacturing method {FLEXIBLE ORGANIC LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF}

The present invention relates to a flexible organic light emitting diode and a method for manufacturing the same. More particularly, the present invention relates to a flexible organic light emitting diode and can be implemented in a simple structure, thereby reducing labor and cost required for manufacturing and providing flexible organic light emitting diodes having improved electrical and optical properties. It relates to a diode and a method of manufacturing the same.

In general, organic light emitting diodes (OLEDs) are next-generation display devices that emit light by using organic compounds. They are very fast in response and do not require a backlight device that reduces color due to self-luminous. It is widely used to equipment.

In general, as shown in FIG. 1, the organic light emitting diode is formed of a positive electrode 20, a hole injection layer and a hole transport layer 30, and an organic material on the substrate 10 to generate light while combining electrons and holes. The organic light emitting layer 40, the electron injection layer and the electron transport layer 50, such as the electron transport layer, and the negative electrode 60 are stacked in this order.

Here, the substrate 10 is a glass substrate generally used, and the positive electrode 20 formed on the substrate 10 has been transparent and conductive since the organic light emitting diode was announced by CW Tang and SA Van Slyke in 1987. Indium Tin Oxide (ITO), which has a good work function of 4.7 eV, is generally used.

When the glass substrate is used as the substrate 10 as described above, the convenience in the manufacturing process is high, but there is no flexibility, and thus there are many limitations such as expanding the application field of the organic light emitting diode and developing the design of the display device.

Accordingly, recently, studies have been actively conducted to implement an organic light emitting diode having flexibility by using an opaque metal sheet such as a metal foil as a substrate. However, when the metal thin plate is used as a substrate, a process of forming a separate planarization layer and an insulating layer on the metal thin plate is required to solve the problem of roughness of the surface of the metal thin plate and the insulation problem between the elements.

In addition, such a flexible organic light emitting diode is not possible to emit light through the substrate because the metal thin plate as the substrate is opaque, it is necessary to apply the top emission method.

That is, as shown in FIG. 2, the flexible organic light emitting diode uses the lower reflective electrode 20 'as a positive electrode on the substrate 10 on which the planarization layer 11 and the insulating layer 12 are separately formed. The upper transparent electrode 60 'is formed as the hole layer 30, the organic light emitting layer 40, the electron layer 50, and the negative electrode on the reflective electrode 20', and the light generated in the organic light emitting layer 40 is upward. It is implemented in the form of emitting to the transparent electrode (60 ').

As the planarization layer 11 and the insulating layer 12 of the conventional flexible organic light emitting diode, polyimide (PI), SU8, and the like, which are polymer materials capable of solution processing, are widely used. In order to form the planarization layer 11 or the insulating layer 12 with such a material, a material solution is applied to each layer, and a coating and curing process is performed at a predetermined thickness. There is a disadvantage in that the manufacturing cost is high.

On the other hand, for the lower reflecting electrode 20 'formed on the planarization layer 11 and the insulating layer 12, Ag which is high in reflectance and excellent in electrical conductivity is generally used widely. However, Ag has a work function of 4.3 eV, which is lower than 5.0 eV, which is the ionization energy level of a general organic semiconductor material, thereby forming a high hole injection barrier at the interface with the organic semiconductor material constituting the organic light emitting layer 40. However, there is a problem that the optical characteristics are lowered.

In order to solve this problem, Korean Patent Laid-Open Publication No. 2005-99026 proposes a method of forming ITO on Ag to improve hole injection characteristics while using high reflectance of Ag.

However, the Ag / ITO structure has to be deposited at high temperatures of 200 ° C. or higher in order to form a high quality ITO thin film having high light transmittance and low sheet resistance on Ag. This causes a problem that the reflectance of the electrode is lowered.

In order to solve the problems as described above, the present invention can be implemented in a simple structure that can solve the problem of the roughness of the surface of the flexible opaque substrate, the insulation problem between the elements and the high reflectance of the reflective electrode together, SUMMARY To provide a flexible organic light emitting diode and a method of manufacturing the same, which can lower the charge injection barrier at the interface of the light emitting layer.

In order to solve the problems as described above, the flexible organic light emitting diode according to the present invention, the flexible opaque substrate; A distributed Bragg reflector electrode formed by alternately stacking two or more thin films each having a different refractive index on the opaque substrate one or more times; A hole layer formed on the dispersion Bragg reflector electrode and injecting and transporting holes; An electron layer provided on the hole layer and injecting and transporting electrons; A light emitting layer provided between the hole layer and the electron layer and made of an organic material to generate light due to the combination of the electrons and the holes; And a transparent electrode formed on an upper surface of the electronic layer.

The dispersed Bragg reflector electrode is at least one selected from the group consisting of Alq ₃ , NPD, BCP, Bphen, CuPc, PDMS, Polyimid, and SU8 organic compounds, and WO ₃ , MoO ₃ , ZnS, ITO, MgO, ZrO At least one selected from the group consisting of metal oxides, metal nitrides, and fluoride series of ₂ , SnO ₂ , SiO ₂ , and Al ₂ O ₃ may be formed by alternately stacking one or more times.

The distributed Bragg reflector electrode may be formed by alternately stacking two or more of the thin films each of an organic material, an inorganic material, and a metal having a refractive index of 1.0 to 3.0.

The total number of laminated layers of two or more thin films forming the dispersed Bragg reflector electrode may be two or more and 22 or less.

The opaque substrate may be provided with a flexible foil made of metal.

The opaque substrate may be provided with a foil including one or more of steel, stainless steel, plated steel, copper, aluminum, silver, and magnesium.

The flexible organic light emitting diode may further include a conductive oxide film formed on an upper surface of the distributed Bragg reflector electrode to improve electrical conductivity of the distributed Bragg reflector electrode to improve charge injection characteristics.

The conductive oxide film may include at least one selected from the group consisting of ITO, ZnO, SnO ₂ , IZO, AZO, and GZO.

According to an aspect of the present invention, there is provided a method of manufacturing a flexible organic light emitting diode, the method comprising: forming a distributed Bragg reflector electrode by alternately stacking two or more kinds of thin films having different refractive indices one or more times on a flexible opaque substrate; Forming a hole layer for injecting and transporting holes on the dispersed Bragg reflector electrode; Forming an emission layer formed of an organic material on the upper surface of the hole layer to generate light due to the combination of holes and electrons; Forming an electron layer that injects and transports electrons on an upper surface of the emission layer; And forming a transparent electrode on an upper surface of the electronic layer.

In the method of manufacturing the flexible organic light emitting diode, the dispersed Bragg reflector electrode is at least one selected from the group consisting of an organic compound family of Alq ₃ , NPD, BCP, Bphen, CuPc, PDMS, Polyimid, SU8, and WO ₃ , MoO ₃ , ZnS, ITO, MgO, ZrO ₂ , SnO ₂ , SiO ₂ , Al ₂ O ₃ At least one selected from the group consisting of metal oxides, metal nitrides and fluoride series are formed by alternating one or more times Can be.

The distributed Bragg reflector electrode may be formed by alternately stacking two or more of the thin films each of an organic material, an inorganic material, and a metal having a refractive index of 1.0 to 3.0.

The dispersed Bragg reflector electrode may be formed at least once by sputtering, electron beam deposition, thermal deposition, chemical vapor deposition, dispersion, spin coating, bar coating, or laser deposition in two or more kinds of thin films having different refractive indices. It can be formed by alternately laminating.

The method of manufacturing the flexible organic light emitting diode may further include forming a conductive oxide layer on an upper surface of the distributed Bragg reflector electrode to improve electrical conductivity of the distributed Bragg reflector electrode.

The conductive oxide film may include at least one selected from the group consisting of ITO, ZnO, SnO ₂ , IZO, AZO, and GZO.

According to the flexible organic light emitting diode of the present invention and a method of manufacturing the same, a distributed Bragg reflector electrode formed on a flexible opaque substrate such as a metal thin plate solves the problem of roughness of the surface of the opaque substrate and insulation between devices, By acting as a reflective electrode having a high reflectance, the existing structure in which the planarization layer, the insulating layer, and the Ag reflective electrode are separately provided can be simplified.

Accordingly, the labor and cost required for the manufacture of the diode can be reduced.

In addition, the dispersed Bragg reflector electrode is at least one selected from the group consisting of an organic compound series having good flexibility and at least one selected from the group consisting of a metal oxide, metal nitride, and fluoride series each having a high refractive index. By stacking the above alternately, it is possible to ensure the flexibility required for the flexible organic light emitting diode and the high reflectance as the reflective electrode at the same time.

In addition, since the distributed Bragg reflector electrode has a higher work function than the conventional Ag reflecting electrode, the charge injection barrier at the interface with the light emitting layer is lower than that of the Ag reflecting electrode. Optical properties can be improved. Accordingly, it is possible to manufacture a flexible organic light emitting diode having a high light output.

In addition, even when the dispersed Bragg reflector electrode is made of a material that is somewhat poor in electrical conductivity, a conductive oxide film may be formed on the upper surface of the Distributed Bragg reflector electrode to secure sufficient electrical conductivity, thereby improving charge injection characteristics.

1 is a structural diagram of a general organic light emitting diode,
2 is a structural diagram of a conventional flexible organic light emitting diode,
3 is a structural diagram of a flexible organic light emitting diode according to a preferred embodiment of the present invention,
4 is a structural diagram of a distributed Bragg reflector electrode provided in a flexible organic light emitting diode according to an exemplary embodiment of the present invention;
5 is a view illustrating a distributed Bragg reflector electrode according to the number of stacked first and second thin films each consisting of ZnS and Alq ₃ forming a distributed Bragg reflector electrode in a flexible organic light emitting diode according to a preferred embodiment of the present invention. Graph showing reflection characteristics for the ray region,
6 is a flexible organic light emitting diode according to another embodiment of the present invention, wherein the visible light region of the distributed Bragg reflector electrode according to the number of stacked first and second thin films each formed of ZnS and BCP forming a distributed Bragg reflector electrode Graph showing reflection characteristics for,
7 is a flowchart illustrating a method of manufacturing a flexible organic light emitting diode according to a preferred embodiment of the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains (hereinafter, referred to as a 'normal technician') may easily perform the present invention. . The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

The flexible organic light emitting diode and its manufacturing method according to the present invention relates to an organic light emitting diode that is manufactured to be bent in order to expand the field of application of the organic light emitting diode, increase the degree of freedom of design development of the display device, and a method of manufacturing the same. More particularly, the present invention relates to a flexible organic light emitting diode and a method for manufacturing the same, which can reduce man-hours and costs required for manufacturing, and have improved electrical and optical properties, and the size and thickness of the film or regions in the accompanying drawings. Is exaggerated to explain the invention more clearly.

Hereinafter, with reference to the accompanying Figures 3 to 6, the configuration and effect of the flexible organic light emitting diode according to an embodiment of the present invention will be described in detail.

In the flexible organic light emitting diode according to the preferred embodiment of the present invention, the opaque substrate 100, the distributed Bragg reflector electrode 200, the conductive oxide film 300, the hole layer 400, the light emitting layer 500, and the electron layer 600 are provided. And a transparent electrode 700.

The opaque substrate 100 is provided with a metal foil or a thin metal plate that can be easily bent, and includes a dispersed Bragg reflector electrode 200, a conductive oxide film 300, a hole layer 400, a light emitting layer 500, and an electronic layer 600. ) And other components of the transparent electrode 700.

The metal foil used as the opaque substrate 100 may be a foil made of a metal including at least one of steel, stainless steel, plated steel, copper, aluminum, silver, and magnesium.

The distributed Bragg reflector electrode 200 is a distributed Bragg reflector (DBR) formed by alternately stacking two or more thin films made of materials having different refractive indices on the upper surface of the opaque substrate 100 one or more times. Is done.

Since the distributed Bragg reflector electrode 200 has a high reflectance by itself, it is inferior as a reflecting electrode and at the same time, evenly roughens the rough surface of the flexible opaque substrate 100 made of metal foil and solves the problem of insulation between devices. Play all roles.

That is, when the flexible opaque substrate 100 is conventionally used as a substrate of an organic light emitting diode, a planarization layer for solving the surface roughness problem of the opaque substrate 100, an insulating layer for solving the insulation problem between devices, and a high reflectance are used. Each Ag reflecting electrode should be separately formed, but in the present invention, the distributed Bragg reflector electrode 200 performs three roles at the same time.

In the preferred embodiment of the present invention, as shown in Fig. 4, the first thin film 210 made of Alq ₃ having an organic compound-based material having good flexibility and having a refractive index of 1.73, and a metal nitride having a high refractive index of 2.38. The second thin film 220 made of ZnS was deposited nine times alternately at a thickness of 73.7 nm and 53.6 nm, which is found to be an optimum thickness under a wavelength condition of? As shown in FIG. 5, the reflectance of the distributed Bragg reflector electrode 200 was 95.1%, as shown in FIG. 5.

Here, the optimum thicknesses of the first and second thin films 210 and 220 are set to conditions for the constructive interference condition for the distributed Bragg reflector electrode 200 to perform a normal reflection function, that is, a 3λ / 4 condition.

In the preferred embodiment of the present invention, the dispersed Bragg reflector electrode 200 is formed by alternately stacking the first thin film 210 made of Alq ₃ and the second thin film 220 made of ZnS, but the first thin film 210. ) And the material of the second thin film 220 are not limited thereto.

The first thin film 210 may be made of one selected from the group consisting of Alq ₃ , NPD, BCP, Bphen, CuPc, PDMS, Polyimid, and SU8, and the second thin film 220 is WO _3. , MoO ₃ , ZnS, ITO, MgO, ZrO ₂ , SnO ₂ , SiO ₂ , Al ₂ O _{3 It} can be made of one selected from the group consisting of metal oxides, metal nitrides, fluoride series.

The distributed Bragg reflector electrode 200 is preferably formed of the first thin film 210 having the good flexibility and the second thin film 220 having the high refractive index. However, the dispersed Bragg reflector electrode 200 is not limited thereto. Two of the thin films each having an organic material, an inorganic material, and a metal having a refractive index of 1.0 to 3.0 may be alternately stacked one or more times, and three or more of these thin films may be alternately stacked one or more times.

However, it is appropriate that the total number of two or more thin films forming the distributed Bragg reflector electrode 200 is two or more and 22 or less. Basically, two or more layers are required to form the distributed Bragg reflector. In the case where the number exceeds 22 layers, the number of laminated thin films is so large that the number of laminated thin films is too large for the improved reflection characteristics and the like. Because.

In fact, as can be seen in FIG. 5, when the first and second thin films 210 and 220 constituting the distributed Bragg reflector electrode 200 are Alq ₃ and ZnS, respectively, five pairs (10 layers) of reflectance are reflected. 85.9% of silver, reflectivity is 92.7% when 7 pairs (14 layers) are stacked, 95.1% reflectance when 9 pairs (18 layers) are stacked, and reflectance is 95.8 when 11 pairs (22 layers) are stacked In%, the reflectivity is also improved as the number of stacks increases, but it can be seen that the increase is actually slowed down as the number of stacks increases.

As can be seen from FIG. 6, even when the first and second thin films 210 and 220 constituting the distributed Bragg reflector electrode 200 are laminated with BCP and ZnS, the same behavior can be seen.

Meanwhile, in the present invention, the work function of the distributed Bragg reflector electrode 200 is about 4.9 to 5.1 eV, which is similar to 5.0 eV, which is the ionization energy level of a general organic semiconductor material, and the work function is 4.3 to less than 5.0 eV. Since the hole injection barrier at the interface with the light emitting layer 500 made of organic material is lower than the conventional Ag reflective electrode having a work function of 4.7 eV, the electrical and optical characteristics of the diode may be improved.

The conductive oxide film 300 is selectively formed on the upper surface of the distributed Bragg reflector electrode 200 when the distributed Bragg reflector electrode 200 is made of a material having a somewhat low electrical conductivity, thereby providing electrical conductivity of the Distributed Bragg reflector electrode 200. Improves charge injection characteristics.

The conductive oxide film 300 may include at least one selected from the group consisting of ITO, ZnO, SnO ₂ , IZO, AZO, and GZO having high electrical conductivity.

The hole layer 400 is formed on the upper surface of the conductive oxide film 300 in a single layer or a multilayer form by using α-NPD so as to inject and transport holes to be delivered to the light emitting layer 500. Of course, when the conductive oxide film 300 is not provided in the flexible organic light emitting diode according to the present invention, the hole layer 400 is formed directly on the upper surface of the distributed Bragg reflector electrode 200.

The emission layer 500 is formed on the upper side of the hole layer 400 and is made of an organic material, such as TCTA doped with Alq ₃ and Flr6, and is transmitted through the hole and the electron layer 600 which are transmitted through the hole layer 400. This is where light is generated by the combination of electrons.

The electronic layer 600 is formed on the upper side of the light emitting layer 500 in a single layer or a multilayer form of LiF, Alq ₃ , or the like so as to inject and transport electrons and deliver the electrons to the light emitting layer 500. That is, the emission layer 500 is interposed between the electron layer 600 and the hole layer 400.

The transparent electrode 700 is formed of a thin metal thin film of 50 nm or less or a conductive metal oxide such as ITO having high electrical conductivity and transparency on the upper side of the electronic layer 600.

In the preferred embodiment of the present invention, the distributed Bragg reflector electrode 200 is a positive electrode, the transparent electrode 700 is implemented in the form of a negative electrode, but is not limited to this, the distributed Bragg reflector electrode 200 It may be a negative electrode, and the transparent electrode 700 may be implemented in an inverted form as a positive electrode.

Hereinafter, a method of manufacturing a flexible organic light emitting diode according to a preferred embodiment of the present invention will be described in detail with reference to FIGS. 3 and 7.

First, a flexible opaque substrate 100 such as a metal foil serving as a support is prepared, and the dispersed Bragg reflector electrode 200 is formed on the opaque substrate 100 (S100).

The process of forming the dispersed Bragg reflector electrode 200 is made of a first thin film 210 made of an organic compound-based material having good flexibility and a metal oxide, metal nitride, or fluoride-based material having a high refractive index. The two thin films 220 are formed by alternately stacking one or more times by any one of sputtering, electron beam deposition, thermal evaporation, chemical vapor deposition, dispersion, spin coating, bar coating, and laser deposition.

Of course, when forming the distributed Bragg reflector electrode 200, it may be more preferable to apply the PVD method rather than the CVD method, which requires a high temperature deposition process.

Next, a conductive oxide film 300 including one or more of ITO, ZnO, SnO 2, IZO, AZO, and GZO is formed on the upper surface of the distributed Bragg reflector electrode 200 (S200). When the conductive oxide film 300 lacks the electrical conductivity of the distributed Bragg reflector electrode 200, the conductive oxide film 300 improves the electrical conductivity of the device by improving the electrical conductivity of the Distributed Bragg reflector electrode 200.

Thereafter, the hole layer 400 for injecting and transporting holes and delivering the holes to the light emitting layer 500 is formed on the upper surface of the conductive oxide film 300 in a single layer or a multilayer form by using α-NPD (s300).

Next, an organic material such as TCTA doped with Alq ₃ and Flr6 is formed on the upper surface of the hole layer 400 due to the combination of holes transferred through the hole layer 400 and electrons transferred through the electron layer 600. A light emitting layer 500 is formed to generate light (S400).

The electron layer 600 which injects and transports the electrons and delivers the electrons to the light emitting layer 500 is formed on the upper surface of the light emitting layer 500 in a single layer or a multilayer form by using LiF, Alq ₃ , or the like (S500).

Thereafter, a transparent electrode is formed on the upper surface of the electronic layer 600 with a thin metal thin film having a high electrical conductivity and transparency of 50 nm or less or a conductive metal oxide such as ITO (s600), thereby manufacturing a flexible organic light emitting diode. To complete.

As described above, according to the flexible organic light emitting diode according to the present invention and a method for manufacturing the same, the dispersed Bragg reflector electrode 200 formed on the flexible opaque substrate 100, such as a metal thin plate, is formed on the surface of the opaque substrate 100. By solving the problem of roughness and insulation between devices, and acting as a reflective electrode itself having a high reflectance, the existing structure in which the planarization layer, the insulating layer, and the Ag reflective electrode are separately provided is simplified, which is necessary for manufacturing. It is possible to reduce the man-hours and costs, and basically, the charge injection barrier at the interface with the light emitting layer 500 is lower than the conventional Ag reflecting electrode, and the conductive oxide film 300 is disposed on the upper surface of the distributed drag reflector electrode 200. This additional formation can further lower the charge injection barrier, thereby improving the electrical and optical properties of the diode.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and belong to the appended claims. Is a matter of course.

Description of the Related Art [0002]
100: flexible opaque substrate 200: dispersed Bragg reflector electrode
210: first thin film 220: second thin film
300: conductive oxide film 400: hole layer
500: light emitting layer 600: electronic layer
700: transparent electrode

Claims (14)

Opaque substrates having flexibility;
A distributed Bragg reflector electrode formed by alternately stacking two or more thin films each having a different refractive index on the opaque substrate one or more times;
A hole layer formed on the dispersion Bragg reflector electrode and injecting and transporting holes;
An electron layer provided on the hole layer and injecting and transporting electrons;
A light emitting layer provided between the hole layer and the electron layer and made of an organic material to generate light due to the combination of the electrons and the holes; And
A transparent electrode formed on an upper surface of the electronic layer;
Flexible organic light emitting diode comprising a. The method of claim 1,
The distributed Bragg reflector electrode,
At least one selected from the group consisting of Alq ₃ , NPD, BCP, Bphen, CuPc, PDMS, Polyimid, SU8,
At least one selected from the group consisting of metal oxides, metal nitrides, and fluoride series of WO ₃ , MoO ₃ , ZnS, ITO, MgO, ZrO ₂ , SnO ₂ , SiO ₂ , Al ₂ O ₃ is alternately stacked one or more times A flexible organic light emitting diode, characterized in that formed. The method of claim 1,
The distributed Bragg reflector electrode,
A flexible organic light emitting diode, wherein at least two thin films each having an organic material, an inorganic material, and a metal having a refractive index of 1.0 to 3.0 are alternately formed one or more times. The method of claim 1,
A flexible organic light emitting diode, characterized in that the total number of laminated layers of two or more thin films forming the dispersed Bragg reflector electrode is two or more and 22 or less. The method of claim 1,
The opaque substrate,
A flexible organic light emitting diode, characterized in that it is provided with a flexible foil made of metal. The method of claim 5,
The opaque substrate,
A flexible organic light emitting diode comprising a foil comprising at least one of steel, stainless steel, plated steel, copper, aluminum, silver and magnesium. 7. The method according to any one of claims 1 to 6,
The flexible organic light emitting diode,
A conductive oxide film formed on an upper surface of the distributed Bragg reflector electrode to enhance electrical conductivity of the distributed Bragg reflector electrode to improve charge injection characteristics;
Flexible organic light emitting diode, characterized in that it further comprises. The method of claim 7, wherein
The conductive oxide film,
A flexible organic light emitting diode comprising at least one selected from the group consisting of ITO, ZnO, SnO ₂ , IZO, AZO, and GZO. Stacking two or more kinds of thin films having different refractive indices one or more times on a flexible opaque substrate to form a distributed Bragg reflector electrode;
Forming a hole layer for injecting and transporting holes on the dispersed Bragg reflector electrode;
Forming an emission layer formed of an organic material on the upper surface of the hole layer to generate light due to the combination of holes and electrons;
Forming an electron layer that injects and transports electrons on an upper surface of the emission layer; And
Forming a transparent electrode on an upper surface of the electronic layer;
Method of manufacturing a flexible organic light emitting diode comprising a. 10. The method of claim 9,
The distributed Bragg reflector electrode,
At least one selected from the group consisting of Alq ₃ , NPD, BCP, Bphen, CuPc, PDMS, Polyimid, SU8,
At least one selected from the group consisting of metal oxides, metal nitrides, and fluoride series of WO ₃ , MoO ₃ , ZnS, ITO, MgO, ZrO ₂ , SnO ₂ , SiO ₂ , Al ₂ O ₃ is alternately stacked one or more times Method for producing a flexible organic light emitting diode, characterized in that formed. 10. The method of claim 9,
The distributed Bragg reflector electrode,
A method of manufacturing a flexible organic light emitting diode, characterized in that two or more of the thin films each having an organic material, an inorganic material, and a metal having a refractive index of 1.0 to 3.0 are formed by alternately stacking one or more times. 10. The method of claim 9,
The distributed Bragg reflector electrode,
Two or more thin films having different refractive indices are formed by alternately laminating at least one time by any one of sputtering, electron beam deposition, thermal deposition, chemical vapor deposition, dispersion, spin coating, bar coating, and laser deposition. A method of manufacturing a flexible organic light emitting diode. 13. The method according to any one of claims 9 to 12,
The manufacturing method of the flexible organic light emitting diode,
Forming a conductive oxide film on an upper surface of the distributed Bragg reflector electrode to improve electrical conductivity of the distributed Bragg reflector electrode;
Method for manufacturing a flexible organic light emitting diode, characterized in that it further comprises. The method of claim 13,
The conductive oxide film,
A method for manufacturing a flexible organic light emitting diode, comprising at least one selected from the group consisting of ITO, ZnO, SnO ₂ , IZO, AZO, and GZO.

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