CN105098018B - The manufacture method of flip LED chips - Google Patents
The manufacture method of flip LED chips Download PDFInfo
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- CN105098018B CN105098018B CN201510293533.8A CN201510293533A CN105098018B CN 105098018 B CN105098018 B CN 105098018B CN 201510293533 A CN201510293533 A CN 201510293533A CN 105098018 B CN105098018 B CN 105098018B
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 159
- 239000002184 metal Substances 0.000 claims abstract description 159
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 132
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000011241 protective layer Substances 0.000 claims description 20
- 150000002739 metals Chemical class 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- -1 metallic reflector Substances 0.000 claims description 3
- 238000004021 metal welding Methods 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 18
- 239000007769 metal material Substances 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract description 5
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 9
- 238000002310 reflectometry Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
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- 239000012808 vapor phase Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
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- 238000000605 extraction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of manufacture method of flip LED chips, covered on a photoresist in this method metal laminated, it is metal laminated on stripping photoresist, peeled off using double reversal by remaining above-mentioned metal laminated the superiors' metal, or the superiors' metal and part time upper strata metal-stripping, with by it is remaining it is above-mentioned it is metal laminated on DBR peel off, wherein, from metal material as release liner, limitation will not be brought to DBR film-forming temperature and time, suitable temperature and cycle can be used to forming DBR, realize DBR high reflectance, wide reflected spectral range, structural behaviour is excellent, and then obtain the more stable reliable LED chip of performance；In addition, by being partially stripped to metal laminated, the metal laminated conductive material as DBR of remainder can be caused, material has been saved and simplified technique.
Description
Technical field
The present invention relates to semiconductor device processing technology field, more particularly to a kind of manufacture method of flip LED chips.
Background technology
The light emitting diode (Light Emitting Diode, abbreviation LED) of inverted structure belongs to the one of light emitting diode
Kind, its architectural feature is that chip light-emitting face is located at substrate surface side, and for comparing traditional die, flip LED chips only need sacrificial
The relatively small light-emitting area of domestic animal is used to be formed to be electrically connected, and lighting area is larger, and can not have to as tradition in manufacturing process
Chip pays close attention to the optics penetrance index of current extending like that, but reflecting layer is set on flip LED chips, this by one
More light can be sent to light-emitting area through reflection and taken out by the reflecting layer that the high reflection material of kind or multiple combinations is formed.Above-mentioned kind
Kind feature causes flip LED chips to have more preferable Bulk current injection tolerance, higher light efficiency, lower voltage.And fall
Fill LED chip need not as traditional die bonding wire so that encapsulation process is simplified, therefore in recent years by more and more
Attention.
Wherein, common reflector material can be divided into two kinds of metallic reflective material and non-metallic reflector material.Such as：Metal
Silver-colored (Ag) and metallic aluminium (Al) come under excellent metallic reflective material, and the two is all readily available more than 90% reflectivity, leads
It is electrically good, easy processing and it is readily available.But its shortcoming is that chemical property is active, oxidizable or vulcanization, easily it is corroded, with
Cause to be difficult to control in flip LED chips process, easily show aging phenomenon.Matched not with the epitaxial layer electricity of chip in addition
It is good, generally require other a small amount of metals of collocation and be used to form more excellent Ohmic contact, this sacrifices this to a certain extent again
Levy reflectivity.In order to overcome these shortcomings of metallic reflector, Distributed Bragg Reflection layer (Distributed can be used
Bragg Reflector, abbreviation DBR), dbr structure is that one kind is made up of the alternate high index of refraction of multilayer and low-index material
Periodic structure, be typically made up of oxide.Usual DBR materials are non-conductive, and insulating barrier can be also served as in flip LED chips, and
Its chemical property and thermal property are stable, are the preferred materials as reflection layer structure.
In the prior art, need to be in perforate thereon, or removal portion after DBR film forming in the manufacturing process of flip LED chips
DBR is divided to be easy to extraction to be electrically connected to form predetermined pattern.Because DBR is not easy to etch, titanium component is such as aoxidized, only in extreme bar
There is faint dissolving under part to acid, also there is its difficulty by physical method, in the prior art frequently with the mode of photoresist lift off, i.e.,
Photoresist is first processed into " island " shape predetermined pattern, row stripping removal again after DBR films is formed, may be such that positioned at DBR materials on " island "
Material together comes off.
Using prior art, DBR film forming procedures need to be aided with heating, and film-forming temperature is operated upon by DBR films in certain limit
It is of fine quality bad；Other DBR film forming periods to more (film formation time is longer), the reflectivity of DBR films is higher, reflected spectral range also more
It is wide.
It is yielding but photoresist is thermo-labile so that DBR film-forming temperature can not be too high, and film formation time also can not mistake
It is long, photoresist otherwise can be caused to become to be difficult to peel off because deforming, going bad to remove, in this case, cause to use existing skill
Temperature is reduced in art DBR film forming procedures and shortens film formation time, so that the loose reflectivity of DBR film quality declines, and rear
Easily come off rupture in continuous process, largely limits and have impact on applications of the DBR on flip LED chips.
The content of the invention
The present invention provides a kind of manufacture method of flip LED chips, for solving the manufacturing process of existing flip LED chips
The middle bad influence DBR of DBR film quality is the application on flip LED chips the problem of.
First aspect present invention provides a kind of manufacture method of flip LED chips, including：
Epitaxial layer is formed on substrate, the epitaxial layer includes from bottom to top：Cushion, intrinsic semiconductor layer, the first half
Conductor layer, luminescent layer and second semiconductor layer electrically different with the first semiconductor layer；
Part second semiconductor layer, the part luminescent layer and part first semiconductor layer are removed, so that
Part first semiconductor layer is exposed, and forms the isolation channel of chip chamber in the epitaxial layer side, wherein, remainder
As first area, the region where first semiconductor layer of exposed part is made in region where second semiconductor layer
For second area；
Current extending is formed on second semiconductor layer of the first area；
The photoresist of the first preset shape is covered on the first area and the second area by photoetching, wherein,
Not by the region that the photoresist covers as the 3rd region；
Covered on the first area, second area and the 3rd region it is metal laminated, it is described metal laminated by multiple
Metal level is formed；
It is metal laminated on the photoresist by peeling off stripping of removing photoresist, and in the first area, second area
And the 3rd form Distributed Bragg Reflection layer DBR on region；
Peeled off using double reversal by remaining above-mentioned metal laminated the superiors' metal, or the superiors' metal and part
Secondary upper strata metal-stripping, by it is remaining it is above-mentioned it is metal laminated on DBR peel off；
Form insulating protective layer on the first area, second area and the 3rd region, and by the insulation protection
Layer is etched into the second preset shape；
Metal wire layer is formed on the insulating protective layer.
In the manufacture method of flip LED chips provided by the invention, peeled off using double reversal by remaining above-mentioned metal
The superiors' metal of lamination, or the superiors' metal and part time upper strata metal-stripping, by it is remaining it is above-mentioned it is metal laminated on
DBR peel off, wherein, from metal material as release liner, limitation will not be brought to DBR film-forming temperature and time, can
So that using suitable temperature and cycle, to forming DBR, the high reflectance, wide reflected spectral range, structural behaviour for realizing DBR are excellent
It is good, and then obtain the more stable reliable LED chip of performance；In addition, by being partially stripped to metal laminated, can cause
The metal laminated conductive material as DBR of remainder, material is saved and has simplified technique.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are this hairs
Some bright embodiments, for those of ordinary skill in the art, without having to pay creative labor, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the schematic flow sheet of the manufacture method embodiment one of flip LED chips provided by the invention；
Fig. 2 is the overlooking the structure diagram of flip LED chips embodiment one provided by the invention；
Fig. 3 is the overlooking the structure diagram of flip LED chips embodiment two provided by the invention；
Fig. 4 is the side structure schematic view of flip LED chips embodiment three provided by the invention；
Fig. 5 is the side structure schematic view of flip LED chips example IV provided by the invention；
Fig. 6 is the overlooking the structure diagram of flip LED chips embodiment five provided by the invention；
Fig. 7 is the overlooking the structure diagram of flip LED chips embodiment six provided by the invention；
Fig. 8 is the overlooking the structure diagram of flip LED chips embodiment seven provided by the invention.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Fig. 1 is the schematic flow sheet of the manufacture method embodiment one of flip LED chips provided by the invention, and Fig. 2 is this hair
The overlooking the structure diagram of the flip LED chips embodiment one of bright offer, Fig. 3 are implemented for flip LED chips provided by the invention
The overlooking the structure diagram of example two, Fig. 4 be flip LED chips embodiment three provided by the invention side structure schematic view, Fig. 5
For the side structure schematic view of flip LED chips example IV provided by the invention, Fig. 6 is flip LED core provided by the invention
The overlooking the structure diagram of piece embodiment five, Fig. 7 are that the plan structure of flip LED chips embodiment six provided by the invention is illustrated
Figure.
As shown in figure 1, this method includes：
S101, epitaxial layer 10 is formed on substrate, the epitaxial layer includes from bottom to top：Cushion, intrinsic semiconductor layer,
Semi-conductor layer, luminescent layer and second semiconductor layer electrically different with the first semiconductor layer.
Specifically, as shown in figure 4, first providing a substrate (not shown), epitaxial layer 010 is formed in substrate top surface.
The material of the substrate can be by GaAs (GaAs), silicon (Si), carborundum (SiC), sapphire (Al2O3), aluminium nitride
(AlN), at least one of gallium nitride (GaN) and zinc oxide (ZnO) are formed, but are not limited thereto.
S102, part second semiconductor layer, the part luminescent layer and part first semiconductor layer are removed,
So that part first semiconductor layer is exposed, and the isolation channel (not shown) of chip chamber is formed in the epitaxial layer side.Its
In, as first area 100, described the first the half of exposed part leads for region where second semiconductor layer of remainder
Region where body layer is as second area 200.
Specifically, dry plasma etch can be used to remove part second semiconductor layer, the part luminescent layer
And part first semiconductor layer.
S103, current extending (not shown) is formed on the second semiconductor layer of above-mentioned first area.
Specifically, the modes such as electron beam evaporation plating, magnetron sputtering can be used to form current extending, and passes through photoetching and change
The modes such as etching retain the current extending in first area 100.Current extending is transparent conductive material, such as indium oxide
Tin (ITO) or indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide
(AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), indium gallium (IGO), gallium oxide aluminium zinc (GAZO),
Indium zinc oxide (IZO), or include one kind in gallium phosphide (GaP), diamond-like carbon film (DLC), or the change that these materials are formed
Compound.
S104, the photoresist that the first preset shape is covered by photoetching on first area 100 and second area 200, its
In, not by the region that the photoresist covers as the 3rd region 300.
Reference picture 3, dash area are the 3rd region 300, wherein, the 3rd region on first area 100 is the 3rd
Positivity region 301, the 3rd region on second area are the 3rd negativity region 302.Now, positioned at the 3rd positivity region
301 current extending is exposed, and the first semiconductor layer positioned at the 3rd negativity region 302 is exposed.
S105, cover on above-mentioned first area, second area and the 3rd region metal laminated, this is metal laminated by more
Individual metal level is formed.Specifically, the physical chemistry of this multiple metal level may be electrically different from.
It can be seen that this metal laminated is also covered on a photoresist.
S106, by peel off remove photoresist peel off it is metal laminated on the above-mentioned photoresist, and in above-mentioned first area, second
DBR is formed on region and the 3rd region.
Reference picture 4, wherein, it is metal laminated on above-mentioned photoresist by peeling off stripping of removing photoresist, be specially：In stripping
Rheme realized the metal laminated stripping on photoresist in first area and the photoresist of second area, meanwhile, positioned at
Metal laminated 020 on three regions is retained.
After the metal laminated stripping on above-mentioned photoresist, in above-mentioned first area, second area and the 3rd
DBR030 is formed on region, i.e. the DBR be covered in it is remaining it is metal laminated on.
During specific implementation, the modes such as electron beam evaporation or magnetron sputtering can be used to form DBR030.The present embodiment
In, due to from metal material, as release liner, DBR film-forming temperature and the limitation of time can be broken away from.
S107, peeled off remaining above-mentioned metal laminated the superiors' metal, or the superiors' metal using double reversal
With part time upper strata metal-stripping, by it is remaining it is above-mentioned it is metal laminated on DBR peel off.
S108, insulating protective layer 050 is formed on above-mentioned first area, second area and the 3rd region, and will be above-mentioned
Insulating protective layer is etched into the second preset shape.
As shown in fig. 6, wherein it is possible to using vapour deposition or evaporation, sputtering etc. mode form insulating protective layer 050, enter
And SI semi-insulation protective layer is etched away by way of vapor phase etchant or liquid phase etching, form the insulation protection of the second preset shape
Layer so that at least partly metal laminated exposed, the exposed part in the 3rd positivity region 301 and the negativity region 302 of part the 3rd
Referred to as second metal laminated 040 (as shown in Figure 5).
It should be noted that above-mentioned vapor phase etchant, which includes, uses the dry etching of gaseous plasma containing corrodibility, can be with
Accurate control etch rate and etching depth so that do not damaged while insulating protective layer 050 is removed under it
DBR030 or second metal laminated 040.
S109, metal wire layer is formed on above-mentioned insulating protective layer.Flip LED chips manufacture is completed.
The material of the metal wire layer can be Cr, Al, Ti, Ni, Au, but be not limited to the combining form of these metals.
In the present embodiment, peeled off using double reversal by remaining above-mentioned metal laminated the superiors' metal, or it is most upper
Layer metal and part time upper strata metal-stripping, by it is remaining it is above-mentioned it is metal laminated on DBR peel off, wherein, from metal material
Material is used as release liner, will not bring limitation to DBR film-forming temperature and time, can use suitable temperature and cycle to shape
Into DBR, it is excellent to realize DBR high reflectance, wide reflected spectral range, structural behaviour, so obtain that performance is more stable can
The LED chip leaned on；In addition, by being partially stripped to metal laminated, the metal laminated of remainder can be caused to be used as DBR
Conductive material, saved material and simplified technique.
In another embodiment, above-mentioned first preset shape can be hole shape, strip or netted, but not be once
Limit.
Further, above-mentioned metal laminated each metal level physicochemical properties are different, wherein, multiple metal levels from lower and
On include：Metal contact layer, metallic reflector, metal barrier layers, metal bonding layer, sacrificial metal layer.
Specifically, following metal materials can be selected in this multiple metal level：Chromium (Cr), aluminium (Al), titanium (Ti), golden (Au), silver
(Ag), nickel (Ni) etc., wherein, can in metal contact layer, metallic reflector, metal barrier layers, metal bonding layer, sacrificial metal layer
To have two or more layer choosings with same metal.Metal contact layer be used for binder metal material and ground it is necessary to have
Preferable adhesiveness and characteristics of electrical conductivity, such as metal Cr, can be formed good with current extending and the first semiconductor layer respectively
Good Ohmic contact；Metallic reflector is made up of tool high reflectivity metal, possesses the function for the light that Refl-Luminous area is sent,
Supplement as DBR reflecting layer in a way, and the metal laminated necessary composition, i.e., in some cases can should not gold
Belong to reflecting layer；Metal blocks layer to prevent the metal material of metal contact layer and metallic reflector from diffusing to metal bonding layer, separately
On one side, metal blocks layer and also prevents extraneous chemical substance from reacting on metallic reflector and metal contact layer；Metal combines
Layer is preset for forming electrical contact with welding metal lamination, possesses the surface properties different with sacrificial metal layer so that position
Sacrificial metal layer on metal bonding layer is easy to come off；Sacrificial metal layer possesses more active chemical property, such as
It is easy to corrosion dissolution in the presence of weak acid or weak base, or becomes prone to remove in the form of others chemically react.
It should be noted that in above-mentioned multiple metal levels, at least metal blocks layer and is not involved in chemically reacting, or at least golden
Category blocks layer and is not involved in chemically reacting with metal bonding layer.
Preferably, metal laminated 020 gross thickness is 1.5-3um.
Further, it is above-mentioned to form DBR on first area, second area and the 3rd region, be specially：Using high temperature
Film forming forms DBR in mode on first area, second area and the 3rd region.
Wherein, during forming DBR, higher film-forming temperature, such as 250-300 degrees Celsius can be aided with, to obtain
High-quality film quality, the more cycle can also be used to carrying out film forming, such as 12-15 pairs so that DBR has in wide in range wave band
There is higher reflectivity.
In another embodiment, peeled off using double reversal by remaining above-mentioned metal laminated the superiors' metal, or most
Upper strata metal and part time upper strata metal-stripping, by it is remaining it is above-mentioned it is metal laminated on DBR peel off, be specially：Using change
The method for learning etching removes sacrificial metal layer, or, sacrificial metal layer and part metals binder course are removed, will be remaining above-mentioned
DBR on metal laminated is peeled off.
During specific implementation, sacrificial metal layer can select metallic aluminium, can be corroded in the presence of weak acid or weak base
Remove, and metal bonding layer and metal below blocks layer can select the material such as gold, platinum, is not made by weak acid and weak base
With during to remove sacrificial metal layer, not destroying metal bonding layer and metal block layer.After sacrificial metal layer is stripped, or
After sacrificial metal layer and part metals binder course are stripped, the metal bonding layer left is exposed.
In another embodiment, insulating protective layer 050 is formed on above-mentioned first area, second area and the 3rd region,
And above-mentioned insulating protective layer is etched into the second preset shape, it can specifically include：Above-mentioned first area, second area and
Insulating protective layer 050 is formed on 3rd region, then, by photoetching and corrosion, SI semi-insulation protective layer 050 is removed, with exposed
Go out part metals lamination, that is, expose above-mentioned second metal laminated 040.
Wherein, what is exposed is metal laminated including two electrically different parts.Specifically, part can be made to be located at the 3rd
The part metals lamination in positivity region 301 is exposed, then makes part positioned at the metal laminated exposed of the 3rd negativity region 302.
Further, on the basis of above-described embodiment, reference picture 7, metal wire layer 060 can include：First metal
The metal wire layer 062 of bonding wire layer 061 and second, wherein, 062 electrical phase of the first metal wire layer 061 and the second metal wire layer
It is different, and the first metal wire layer 061 and the second metal wire layer 062 respectively with above-mentioned metal laminated two electrically different portions
Point electrical connection, i.e. a metal wire layer with the 3rd positivity region 301 it is exposed it is metal laminated electrically connect, another metal welding
Line layer with the 3rd negativity region 302 it is exposed it is metal laminated electrically connect, so as to form complete electricity structure.
Fig. 8 is the overlooking the structure diagram of flip LED chips embodiment seven provided by the invention, as shown in figure 8, above-mentioned
On the basis of embodiment, flip LED chips can also further be improved, entirely flip LED chips will do and grow up
Side rectangle, that is, the length (i.e. the side of two transverse directions up and down in Fig. 8) of long side is lengthened, to better ensure that the first metal wire layer
061 and second has enough safe distances between metal wire layer 062.
In the embodiment, second area 200 has an elongated area 201, the positivity region of elongated area 201 and the 3rd
301 interlock, and one end of the elongated area 201 is located at the metal wire layer (the first metal wire layer 061 in such as Fig. 8) of positivity and covered
, it is necessary to which explanation is covered with insulating protective layer on elongated area 201, to avoid the metal wire layer with positivity within the scope of lid
Conducting, the partial denudation of the other end 202 of the elongated area, with the metal wire layer of negativity (the second metal wire layer in such as Fig. 8
062) electrically connect.
Transmission of the electric current that elongated area in the present embodiment is on the long side direction of flip LED chips has preferably
Distribution.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (5)
- A kind of 1. manufacture method of flip LED chips, it is characterised in that including：Epitaxial layer is formed on substrate, the epitaxial layer includes from bottom to top：Cushion, intrinsic semiconductor layer, the first semiconductor Layer, luminescent layer and second semiconductor layer electrically different with the first semiconductor layer；Part second semiconductor layer, the part luminescent layer and part first semiconductor layer are removed, so that part First semiconductor layer is exposed, and the epitaxial layer side formed chip chamber isolation channel, wherein, remainder it is described Region where second semiconductor layer is as first area, and the region where first semiconductor layer of exposed part is as Two regions；Current extending is formed on second semiconductor layer of the first area；The photoresist of the first preset shape is covered on the first area and the second area by photoetching, wherein, not by The region of the photoresist covering is as the 3rd region；Covered on the first area, second area and the 3rd region it is metal laminated, it is described metal laminated by multiple metals Layer is formed；By peel off remove photoresist peel off it is metal laminated on the photoresist, and the first area, second area and Distributed Bragg Reflection layer DBR is formed on 3rd region；Peeled off using double reversal by remaining above-mentioned metal laminated the superiors' metal, or the superiors' metal and part time Layer metal-stripping, by it is remaining it is above-mentioned it is metal laminated on DBR peel off, wherein, it is described remaining above-mentioned metal laminated for institute State covered on the 3rd region it is metal laminated；Insulating protective layer is formed on the first area, second area and the 3rd region, and the insulating protective layer is lost It is carved into the second preset shape；Metal wire layer is formed on the insulating protective layer；Wherein, metal laminated each metal level physicochemical properties are different, and the multiple metal level includes from bottom to top：Gold Belong to contact layer, metallic reflector, metal barrier layers, metal bonding layer, sacrificial metal layerIt is described to be peeled off using double reversal by remaining above-mentioned metal laminated the superiors' metal, or the superiors' metal and part Secondary upper strata metal-stripping, by it is remaining it is above-mentioned it is metal laminated on DBR peel off, including：The sacrificial metal layer is removed using the method for chemical etching, or, sacrificial metal layer and part metals binder course are removed, With by it is remaining it is above-mentioned it is metal laminated on DBR peel off.
- 2. according to the method for claim 1, it is characterised in that first preset shape is hole shape, strip or net Shape.
- 3. according to the method for claim 1, it is characterised in that described in the first area, second area and the 3rd DBR is formed on region, including：DBR is formed on the first area, second area and the 3rd region using high temperature thin film-forming method.
- 4. according to the method for claim 1, it is characterised in that described in the first area, second area and the 3rd Insulating protective layer is formed on region, and the insulating protective layer is etched into the second preset shape, including：Insulating protective layer is formed on the first area, second area and the 3rd region；By photoetching and corrosion, the part insulating protective layer is removed, it is described metal laminated to expose part；Wherein, what is exposed is described metal laminated including two electrically different parts.
- 5. according to the method for claim 4, it is characterised in that the metal wire layer includes the first metal wire layer and the Two metal wire layers, the first metal wire layer and the second metal wire layer are electrically different, and first metal welding Line layer and the second metal wire layer electrically connect with metal laminated described two electrically different parts respectively.
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| CN106941127A (en) * | 2017-04-25 | 2017-07-11 | 淮安澳洋顺昌光电技术有限公司 | The preparation method of LED flip chip |
| CN111511544B (en) * | 2018-03-29 | 2022-09-30 | 三井金属矿业株式会社 | Copper foil with glass carrier and method for producing same |
| CN112467018B (en) * | 2020-10-20 | 2021-10-15 | 深圳市隆利科技股份有限公司 | Mini-LED/micro-LED surface light source and manufacturing method thereof |
| CN116169215B (en) * | 2023-04-24 | 2023-07-18 | 江西兆驰半导体有限公司 | Current blocking layer, preparation method thereof and LED chip |
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| US8624482B2 (en) * | 2011-09-01 | 2014-01-07 | Toshiba Techno Center Inc. | Distributed bragg reflector for reflecting light of multiple wavelengths from an LED |
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Denomination of invention: Manufacturing method of flip LED chip Effective date of registration: 20200426 Granted publication date: 20171121 Pledgee: Huizhou Merchant Bank Co., Ltd. Ma'anshan Happy Road Branch Pledgor: YUANRONG PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Registration number: Y2020980001812 |
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