CN104900772A - Preparation method of light emitting diode - Google Patents
Preparation method of light emitting diode Download PDFInfo
- Publication number
- CN104900772A CN104900772A CN201510343269.4A CN201510343269A CN104900772A CN 104900772 A CN104900772 A CN 104900772A CN 201510343269 A CN201510343269 A CN 201510343269A CN 104900772 A CN104900772 A CN 104900772A
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- CN
- China
- Prior art keywords
- emitting diode
- preparation
- light
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 claims description 3
- 238000009279 wet oxidation reaction Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 42
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
he invention discloses a preparation method of a light emitting diode, has the beneficial effects of remarkably increasing reflection of light and enhancing luminous efficiency of the light emitting diode, and is realized through the steps of: (1) providing a growth substrate; (2) depositing a buffer layer, an N type layer, a luminous layer and a P type layer on the growth substrate in sequence; (3) preparing an N electrode and a P electrode on the N type layer and the P type layer respectively; (4) grinding and thinning the reverse side of the growth substrate; (5) providing a Si substrate having the same diameter as that of the growth substrate; (6) aligning the Si substrate with the reverse side of the growth substrate; (7) bonding the Si substrate to the reverse side of the growth substrate through bonding technology, and then performing grinding and thinning to form a thin layer Si; (8) performing a thermal oxidation reaction on the thin layer Si on the reverse side of the growth substrate to form a Si/SiO2 structure; and (9) circulating steps (5) to (8), thereby forming a DBR structure formed by n pairs of Si/SiO2.
Description
Technical field
The invention belongs to semiconductor light emitting technical field, be specifically related to the preparation method of light-emitting diode.
Background technology
Along with light-emitting diode application more and more extensive, its luminous efficiency of further raising has become the research emphasis of industry, wherein, preparing distributed Bragg reflecting layer (DBR:Distributed Bragg Reflector) structure at the light-emitting diode back side is as usable reflection light, improve one of effective means of light-emitting diode luminous efficiency, the dbr structure at the conventional light emitting diodes back side usually adopts evaporation mode to deposit and forms multilayer SiO
2/ TiO
2structure, but traditional evaporation dbr structure needs the number of plies more (20 ~ 40 layers), there is multiple solutions, and affected quality of forming film, and interface unavoidably has light loss; Meanwhile, adopt evaporation mode, having the red bluish-green risk with being plated to light-emitting diode front electrode of light-emitting diode back of the body plating, if be plated to luminous zone, affecting brightness; If be plated to electrode, the difficult bonding wire of LED core grains can be caused, cause customer complaint; For solving the problem, the light-emitting diode that the invention provides a kind of efficient and preparation method of the dbr structure of novelty and adopt it to prepare.
Summary of the invention
For the problems referred to above, the invention provides a kind of preparation method of light-emitting diode, the problem that traditional evaporation DBR preparation method produces can be avoided, effectively can increase the reflection of light simultaneously, strengthen the luminous efficiency of light-emitting diode.
The preparation method of light-emitting diode, comprises the following steps: (1) provides a growth substrates; (2) buffer layer, N-type layer, luminescent layer and P-type layer successively in growth substrates; (3) in N-type layer and P-type layer, N electrode and P electrode is prepared respectively; (4) thinning to growth substrates grinding back surface; (5) the Si substrate that is identical with growth substrates diameter is provided; (6) Si substrate and the growth substrates back side are carried out contraposition; (7) by bonding technology by Si substrate bonding at the growth substrates back side, then grind thinning, form thin layer Si, thin layer Si thickness is 10 ~ 1000 nm; (8) thermal oxidative reaction is carried out to thin layer Si on the growth substrates back side, form Si/SiO
2structure; (9) circulation step (5) ~ (8), form n to Si/SiO
2the dbr structure of composition.
Preferably, the Si substrate of described step (5) can be Si substrate on insulator, described step (5) ~ (7) change to: (5) provide Si substrate on an insulator identical with growth substrates diameter, and its upper surface is thin layer Si, and thin layer Si thickness is 10 ~ 1000 nm; (6) Si substrate top surface on insulator and the growth substrates back side are carried out contraposition; (7) by stripping and bonding technology, the thin layer Si of Si substrate top surface on insulator is bonded in the growth substrates back side; Other steps are identical.
Preferably, described growth substrates, Si substrate are identical with the diameter of Si substrate on insulator and >=1 cun.
Preferably, described N-type layer is III-V race's semiconductor layer of N-type doping, the preferred SiH of N-type dopant
4.
Preferably, described luminescent layer be non-mix or N-type doping or P type doping III-V race's semiconductor layer quantum well/quantum-dot structure.
Preferably, described P-type layer is III-V race's semiconductor layer of P type doping, the preferred CP of P-type dopant
2mg.
Preferably, described thermal oxidative reaction is that dry oxidation is (with O
2reaction) or wet oxidation (with H
2o vapor reaction) or its compound mode, preferred dry is oxidized, and described thermal oxidative reaction temperature is 500 ~ 1500 DEG C.
Preferably, described Si/SiO
2logarithm n>=2 of the dbr structure of composition, preferably 2 ~ 4 is right, and wherein the thickness of Si is 5 ~ 500nm, SiO
2thickness be 5 ~ 500nm.
The preparation method of light-emitting diode of the present invention, at least has following beneficial effect:
(1) the red bluish-green risk with being plated to light-emitting diode front electrode of light-emitting diode back of the body plating traditional evaporation DBR preparation method can being avoided to produce, thus avoid the impact on LED core grains yield and quality;
(2) the few interface of the number of plies is few, has good film-forming property and the high advantage of reflectivity, effectively can increase the reflection of light, strengthen the luminous efficiency of light-emitting diode.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 ~ 2 are the schematic flow sheet that the embodiment of the present invention 1 prepares light-emitting diode.
Fig. 3 ~ 4 are the schematic flow sheet that the embodiment of the present invention 2 prepares light-emitting diode.
Indicate in figure: 100: growth substrates; 101: resilient coating; 102:N type layer; 103: luminescent layer; 104:P type layer; 105:N electrode; 106:P electrode; 107: insulating protective layer; 108:Si substrate; 109: Si substrate on insulator; 110:DBR structure.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in detail.
embodiment 1
As shown in Figure 1 and 2, the schematic flow sheet of a kind of preparation method of light-emitting diode, the method adopts following steps to realize:
(1) provide a growth substrates 100, described growth substrates selects Al
2o
3, SiC, Si, GaN, GaAs or GaP, described growth substrates diameter>=1 cun;
(2) buffer layer 101, N-type layer 102, luminescent layer 103 and P-type layer 104 successively in described growth substrates 100, described resilient coating is non-III-V race's semiconductor layer mixed, described N-type layer is III-V race's semiconductor layer of N-type doping, described luminescent layer be non-mix or N-type doping or P type doping III-V race's semiconductor layer quantum well/quantum-dot structure, described P-type layer is III-V race's semiconductor layer of P type doping, the preferred SiH of N-type dopant
4, the preferred CP of P-type dopant
2mg;
(3) in N-type layer 102 and P-type layer 104, prepare N electrode 105 and P electrode 106 respectively, N electrode and P electrode select Au or Ag or Al or Pt or Ti or its combination in any;
(4) thinning to growth substrates 100 grinding back surface;
(5) a Si substrate 108 identical with growth substrates 100 diameter is provided;
(6) contraposition is carried out at Si substrate 108 and growth substrates 100 back side;
(7) by bonding technology, Si substrate 108 is bonded in the back side of growth substrates 100, then grinds thinning, form thin layer Si, thin layer Si thickness is 10 ~ 1000nm;
(8) thermal oxidative reaction is carried out to thin layer Si on growth substrates 100 back side, select dry oxidation (with O
2reaction) or wet oxidation (with H
2o vapor reaction) or its compound mode, preferred dry is oxidized, and described thermal oxidative reaction temperature is 500 ~ 1500 DEG C, forms Si/SiO
2structure, wherein the thickness of Si is 5 ~ 500nm, SiO
2thickness be 5 ~ 500nm;
(9) circulation step (5) ~ (8), form n to Si/SiO
2the dbr structure 110 of composition, logarithm n>=2, preferably 2 ~ 4 is right;
(10) on exposed epitaxial loayer, make insulating protective layer 107, for the protection of epitaxial loayer, so complete the preparation of light-emitting diode.
embodiment 2
As shown in Fig. 3 ~ 4, embodiment 2 prepares the schematic flow sheet of light-emitting diode, is with the difference of embodiment 1: the Si substrate 108 of described embodiment 1 step (5) changes to Si substrate 109 on insulator, and described embodiment 1 step (5) ~ (7) change to:
(5) provide Si substrate 109 on an insulator identical with growth substrates 100 diameter, its upper surface is thin layer Si, and thin layer Si thickness is 10 ~ 1000nm;
(6) Si substrate 109 upper surface on insulator and growth substrates 100 back side are carried out contraposition;
(7) by stripping and bonding technology, the thin layer Si of Si substrate 109 upper surface on insulator is bonded in the back side of growth substrates 100;
Other preparation processes are identical with embodiment 1.
What adopt above method to prepare has (Si/SiO
2)
nthe light-emitting diode of the dbr structure of composition, the red bluish-green risk with being plated to light-emitting diode front electrode of the light-emitting diode that traditional evaporation DBR preparation method can be avoided to produce back of the body plating, thus avoid the impact on LED core grains yield and quality; Meanwhile, the few interface of the number of plies is few, has good film-forming property and the high advantage of reflectivity, effectively can increase the reflection of light, strengthen the luminous efficiency of light-emitting diode.
Above represent the preferred embodiments of the present invention, it should be understood that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, above description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention, all any changes done according to the present invention, all belong within protection scope of the present invention.
Claims (10)
1. the preparation method of light-emitting diode, comprises following preparation process:
(1) growth substrates is provided;
(2) buffer layer, N-type layer, luminescent layer and P-type layer successively in growth substrates;
(3) in N-type layer and P-type layer, N electrode and P electrode is prepared respectively;
(4) thinning to growth substrates grinding back surface;
(5) the Si substrate that is identical with growth substrates diameter is provided;
(6) Si substrate and the growth substrates back side are carried out contraposition;
(7) by bonding technology by Si substrate bonding at the growth substrates back side, then grind thinning, form thin layer Si, thin layer Si thickness is 10 ~ 1000 nm;
(8) thermal oxidative reaction is carried out to thin layer Si on the growth substrates back side, form Si/SiO
2structure;
(9) circulation step (5) ~ (8), form n to Si/SiO
2the dbr structure of composition.
2. the preparation method of light-emitting diode according to claim 1, is characterized in that: the Si substrate of described step (5) is Si substrate on insulator, and described step (5) ~ (7) change to:
(5) provide Si substrate on an insulator identical with growth substrates diameter, its upper surface is thin layer Si, and thin layer Si thickness is 10 ~ 1000nm;
(6) Si substrate top surface on insulator and the growth substrates back side are carried out contraposition;
(7) by stripping and bonding technology, the thin layer Si of Si substrate top surface on insulator is bonded in the growth substrates back side; Other preparation processes are identical with described in claim 1.
3. the preparation method of light-emitting diode according to claim 1 and 2, is characterized in that: diameter >=1 cun of described growth substrates.
4. the preparation method of light-emitting diode according to claim 1, is characterized in that: described N-type layer is III-V race's semiconductor layer of N-type doping.
5. the preparation method of light-emitting diode according to claim 1, is characterized in that: described luminescent layer be non-mix or N-type doping or P type doping III-V race's semiconductor layer quantum well/quantum-dot structure.
6. the preparation method of light-emitting diode according to claim 1, is characterized in that: described P-type layer is III-V race's semiconductor layer of P type doping.
7. the preparation method of light-emitting diode according to claim 1, is characterized in that: described thermal oxidative reaction is dry oxidation or wet oxidation or its compound mode.
8. the preparation method of light-emitting diode according to claim 7, is characterized in that: described thermal oxidative reaction temperature is 500 ~ 1500 DEG C.
9. the preparation method of light-emitting diode according to claim 1, is characterized in that: described Si/SiO
2logarithm n>=2 of the dbr structure of composition.
10. the preparation method of light-emitting diode according to claim 1, is characterized in that: described Si/SiO
2the dbr structure of composition, wherein the thickness of Si is 5 ~ 500nm, SiO
2thickness be 5 ~ 500nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510343269.4A CN104900772B (en) | 2015-06-19 | 2015-06-19 | The preparation method of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510343269.4A CN104900772B (en) | 2015-06-19 | 2015-06-19 | The preparation method of light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN104900772A true CN104900772A (en) | 2015-09-09 |
| CN104900772B CN104900772B (en) | 2017-06-16 |
Family
ID=54033308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510343269.4A Active CN104900772B (en) | 2015-06-19 | 2015-06-19 | The preparation method of light emitting diode |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105336826A (en) * | 2015-11-11 | 2016-02-17 | 厦门乾照光电股份有限公司 | Method of manufacturing light emitting diode integrated with porous reflection layer |
| CN105355742A (en) * | 2015-12-04 | 2016-02-24 | 天津三安光电有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN105449057A (en) * | 2015-11-11 | 2016-03-30 | 厦门乾照光电股份有限公司 | Porous reflecting layer-integrated light-emitting diode |
| WO2017219817A1 (en) * | 2016-06-22 | 2017-12-28 | 厦门三安光电有限公司 | Upside-down light-emitting diode and manufacturing method therefor |
| CN112786747A (en) * | 2021-02-05 | 2021-05-11 | 东莞市中晶半导体科技有限公司 | InGaN-based red light LED chip structure |
| CN113921670A (en) * | 2021-09-26 | 2022-01-11 | 天津三安光电有限公司 | Light emitting element and method for manufacturing the same |
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| US20040169245A1 (en) * | 2001-11-05 | 2004-09-02 | The Trustees Of Boston University | Reflective layer buried in silicon and method of fabrication |
| CN202423369U (en) * | 2012-01-05 | 2012-09-05 | 湘能华磊光电股份有限公司 | Light-emitting diode chip |
| CN102709420A (en) * | 2012-06-21 | 2012-10-03 | 安徽三安光电有限公司 | GaN-based LED |
-
2015
- 2015-06-19 CN CN201510343269.4A patent/CN104900772B/en active Active
Patent Citations (4)
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| CN1290028A (en) * | 1999-09-27 | 2001-04-04 | 中国科学院半导体研究所 | Technology for preparing semiconductor substrate |
| US20040169245A1 (en) * | 2001-11-05 | 2004-09-02 | The Trustees Of Boston University | Reflective layer buried in silicon and method of fabrication |
| CN202423369U (en) * | 2012-01-05 | 2012-09-05 | 湘能华磊光电股份有限公司 | Light-emitting diode chip |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105336826A (en) * | 2015-11-11 | 2016-02-17 | 厦门乾照光电股份有限公司 | Method of manufacturing light emitting diode integrated with porous reflection layer |
| CN105449057A (en) * | 2015-11-11 | 2016-03-30 | 厦门乾照光电股份有限公司 | Porous reflecting layer-integrated light-emitting diode |
| CN105336826B (en) * | 2015-11-11 | 2017-11-21 | 厦门乾照光电股份有限公司 | A kind of LED production method in integrated porous shape reflecting layer |
| CN105449057B (en) * | 2015-11-11 | 2017-12-26 | 厦门乾照光电股份有限公司 | A kind of light emitting diode in integrated porous shape reflecting layer |
| CN105355742A (en) * | 2015-12-04 | 2016-02-24 | 天津三安光电有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN105355742B (en) * | 2015-12-04 | 2017-11-07 | 天津三安光电有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| WO2017219817A1 (en) * | 2016-06-22 | 2017-12-28 | 厦门三安光电有限公司 | Upside-down light-emitting diode and manufacturing method therefor |
| US11056669B2 (en) | 2016-06-22 | 2021-07-06 | Xiamen San'an Optoelectronics Co., Ltd. | Flip-chip light emitting diode and manufacturing method thereof |
| CN112786747A (en) * | 2021-02-05 | 2021-05-11 | 东莞市中晶半导体科技有限公司 | InGaN-based red light LED chip structure |
| CN113921670A (en) * | 2021-09-26 | 2022-01-11 | 天津三安光电有限公司 | Light emitting element and method for manufacturing the same |
| CN113921670B (en) * | 2021-09-26 | 2024-04-12 | 天津三安光电有限公司 | Light-emitting element and preparation method thereof |
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| CN104900772B (en) | 2017-06-16 |
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