CN101626000B - Metal array basal plate, photoelectric element, light-emitting element and manufacturing method thereof - Google Patents
Metal array basal plate, photoelectric element, light-emitting element and manufacturing method thereof Download PDFInfo
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- CN101626000B CN101626000B CN200810136131.7A CN200810136131A CN101626000B CN 101626000 B CN101626000 B CN 101626000B CN 200810136131 A CN200810136131 A CN 200810136131A CN 101626000 B CN101626000 B CN 101626000B
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Abstract
The invention discloses a metal array basal plate, a high heat-conductibility photoelectric element provided with the same, a light-emitting element and a manufacturing method thereof. The metal array basal plate comprises a plurality of metal unit basal plates and a colloidal substance which is positioned between the metal unit basal plates and has a sticking function. The high heat-conductibility photoelectric element comprises a metal unit basal plate, a jointing layer positioned on the metal unit basal plate, and an outer extension structure positioned on the jointing layer.
Description
Technical field
The present invention discloses a kind of metal array basal plate and high thermal conductivity photoelectric cell structure and manufacture method thereof formed thereon, particularly about a kind of high thermal conductivity light emitting diode construction and manufacture method thereof.
Background technology
Aluminium oxide (sapphire) substrate of known carrying blue light-emitting diode belongs to low heat conductivity material (coefficient of heat conduction is about 40W/mK), while operation under high current situation, transferring heat effectively, causes accumulation of heat and affects the reliability of light-emitting diode.
At present market occurs full wafer high thermal conductivity metallic copper substrate (coefficient of heat conduction is about 400W/mK) to electroplate or bonding method is connected with light-emitting diode, transferring heat effectively.But removing after growth substrate, internal stress compression full wafer metallic copper substrate, causes chip (wafer) warpage and affects subsequent technique yield.
Summary of the invention
The invention provides a kind of structure with high thermal conductivity metal substrate, it is by multiple metal unit substrates and have adhesion function and be positioned at the metal array basal plate that the colloidal substance between metal unit substrate forms.
The invention provides a kind of structure with high thermal conductivity metal substrate, by copper, aluminium, nickel, gold and alloy composition thereof.
The invention provides a kind of structure with high thermal conductivity metal substrate, wherein colloidal substance has insulation and high-temperature stability, be for example post-curing type liquid resin, can irradiate or heat (400 DEG C of <) baking and solidify via UV.
The invention provides a kind of structure with high thermal conductivity photoelectric cell, substrate is wherein metal array basal plate.
The invention provides a kind of structure with high thermal conductivity photoelectric cell, substrate is wherein metal array basal plate, is made up of and each metal unit substrate side surfaces has colloidal substance multiple metal unit substrates.
The invention provides a kind of structure with high thermal conductivity photoelectric cell, substrate is wherein metal array basal plate, is made up of, and utilizes knitting layer or plating mode to engage with light emitting diode construction multiple metal unit substrates.
The invention provides a kind of structure with high thermal conductivity photoelectric cell, substrate is wherein metal array basal plate, is made up of and each metal unit substrate area can equate or unequal multiple metal unit substrates.
The invention provides a kind of structure with high thermal conductivity photoelectric cell, substrate is wherein metal array basal plate, because its heat conduction efficiency is high, so photoelectric cell can directly carry out encapsulation step and not need separately to add a support plate (submount).
The invention provides a kind of structure with high thermal conductivity photoelectric cell, can be vertical stratification or horizontal structure.
The present invention discloses a kind of ray structure with high thermal conductivity metal substrate, and its metal substrate is not that full wafer is pasted or is plated on ray structure, but becomes metal array basal plate with colloidal substance binding metal cell substrate.After growth substrate removes, do not need cutting metal substrate again, and because colloidal substance has the function that cushions stress, can reduce the probability that chip warpage occurs, improve subsequent technique yield.
Brief description of the drawings
Fig. 1 shows metal array basal plate outside drawing of the present invention;
Fig. 2 A-2H shows the making flow chart of metal array basal plate of the present invention;
Fig. 3-7 show the photoelectric cell making flow chart of the embodiment of the present invention;
Fig. 8-12 show the photoelectric cell making flow chart of another embodiment of the present invention;
Fig. 4 and 13-19 show the photoelectric cell making flow chart of yet another embodiment of the invention.
[main element symbol description]
1～copper base
2～photoresist
3～list structure
4～colloidal substance
5,6a, 6b～metal unit substrate
7a, 7b～electroless nickel layer
8～copper electroplating layer
10,20～metal array basal plate
11～knitting layer
21～growth substrate
22～epitaxial structure
23～the first electrical semiconductor layers
24～active layer
25～the second electrical semiconductor layers
26～the second layers in electrical contact
27～reflector
28～the first layers in electrical contact
29～the first electrodes
30～Cutting Road
31～temporary base
32～adhesion coating
33～the second electrodes
34～glued membrane
100,200,300～LED core
Embodiment
The present invention discloses a kind of metal array basal plate and high thermal conductivity photoelectric cell structure and manufacture method thereof formed thereon.In order to make narration of the present invention more detailed and complete, can and coordinate Fig. 1 to Figure 19 with reference to following description.
embodiment mono-
Photoelectric cell of the present invention is taking light-emitting diode as example, and its structure and manufacture method are as shown in Fig. 1-8.Fig. 1 is metal array basal plate outside drawing used in the present invention.Fig. 2 A to Fig. 2 H is the flow chart of metal array basal plate manufacture method used in the present invention.As shown in Figure 2 A, by metal substrate 1, for example copper base, thereunder adhesive film 34, surface-coated one deck photoresist 2 (as Fig. 2 B) thereon, recycling gold-tinted development etch process forms multiple tracks list structure 3 in metal substrate 1 etching, and wherein the distance of adjacent twice list structure is determined (as Fig. 2 C, 2D) according to follow-up design with the light emitting diode construction of its stickup.Filling colloidal substance 4 (as Fig. 2 E, 2F) in list structure again, wherein colloidal substance has insulation and high-temperature stability, be for example post-curing type liquid resin, can irradiate or heat (400 DEG C of <) baking and solidify via UV.Finally remove photoresist, form and utilize high-termal conductivity metal array basal plate 10 that the multiple metal unit substrates 5 adjacent and that area is identical of colloidal substance bonding form or multiple adjacent but high-termal conductivity metal array basal plate 20 that metal unit substrate 6a that area is different and 6b form, as shown in Fig. 2 G, 2H.Wherein metal array basal plate 10,20 can be the metal such as copper (Cu), aluminium (Al), nickel (Ni), gold (Au) or its alloy forms.
As shown in Figure 3, on metal array basal plate 10, form knitting layer 11, its material can be the metal materials such as silver, gold, aluminium, indium, or be spontaneous conducting polymer, or adulterate as the electric conducting material that aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin, titanium, lead, copper, palladium or its alloy formed in macromolecule.
Figure 4 shows that ray structure, for example, is light-emitting diode, comprises growth substrate 21, and its material can be GaAs, silicon, carborundum, sapphire, indium phosphide, gallium phosphide, aluminium nitride or gallium nitride etc.Then, on growth substrate 21, form epitaxial structure 22.Epitaxial structure 22 forms by epitaxy technique, for example organic metal vapour deposition epitaxy (MOCVD), liquid phase epitaxial method (LPE) or molecular beam epitaxy (MBE) homepitaxy technique.This epitaxial structure 22 at least comprises the first electrical semiconductor layer 23, for example, be N-shaped AlGaInP (Al
xga
1-x)
yin
1-yp layer or N-shaped aluminum indium gallium nitride (Al
xga
1-x)
yin
1-yn layer; Active layer 24 is for example AlGaInP (Al
xga
1-x)
yin
1-yp or aluminum indium gallium nitride (Al
xga
1-x)
yin
1-ythe multiple quantum trap structure that N forms; And the second electrical semiconductor layer 25, be for example p-type AlGaInP (Al
xga
1-x)
yin
1-yp layer or p-type aluminum indium gallium nitride (Al
xga
1-x)
yin
1-yn layer.In addition, the active layer 24 of the present embodiment can be by for example homostyructure, single heterojunction structure, double-heterostructure or stacking the forming of multiple quantum trap structure.
Then, on epitaxial structure 22, form the second layer 26 in electrical contact and reflector 27.The material of the second layer 26 in electrical contact can be tin indium oxide (Indium Tin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin (Cadmium Tin Oxide), zinc oxide (Zinc Oxide), magnesium oxide (Magnesium Oxide) or titanium nitride (Titanium Nitride) etc.Reflector 27 can be metal material, metal or its alloys such as such as aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin; Also can be formed by metal and combination of oxides, for example tin indium oxide/silver (ITO/Ag), tin indium oxide/aluminium oxide/silver (ITO/AlO
x/ Ag), tin indium oxide/titanium oxide/silica (ITO/TiO
x/ SiO
x), titanium oxide/silica/aluminium (TiO
x/ SiO
x/ Al), tin indium oxide/silicon nitride/aluminium (ITO/SiN
x/ Al), tin indium oxide/silicon nitride/silver (ITO/SiN
x/ Ag), tin indium oxide/silicon nitride/aluminium oxide/aluminium (ITO/SiN
x/ Al
2o
3/ Al) or tin indium oxide/silicon nitride/aluminium oxide/silver (ITO/SiN
x/ Al
2o
3/ Ag) etc.
Then, as shown in Figure 5 the ray structure with reflector 27 is engaged on knitting layer 11 as shown in Figure 3, and removes glued membrane.Then as shown in Figure 6, remove after growth substrate 21 by modes such as laser lift-off technique, etch process or CMP (Chemical Mechanical Polishing) process, expose the surface of the first electrical semiconductor layer 23 of epitaxial structure 22, then form thereon the first layer 28 in electrical contact.The material of the first layer 28 in electrical contact can be the film that tin indium oxide (Indium Tin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin (Cadmium Tin Oxide), zinc oxide (Zinc Oxide), magnesium oxide (Magnesium Oxide), titanium nitride (Titanium Nitride), germanium gold (Ge/Au) or germanium gold nickel (Ge/Au/Ni) form, and optionally on film, forms specific pattern with etch process.Utilize the methods such as hot evaporation (Thermal Evaporation), electron beam evaporation plating (E-beam) or ion beam sputtering deposition (Sputtering), between the specific pattern of the first layer 28 in electrical contact, form the first electrode 29.If the first layer 28 in electrical contact is not for forming the continuous film layer of specific pattern, 29, the first electrode is formed directly on the first layer in electrical contact.In this embodiment, metal array basal plate 10 can be used as the second electrode.Then etching multiple tracks Cutting Road 30, then along Cutting Road, light-emitting diode is cut into multiple LED core 100 with high-thermal conductive metal cell substrate 5, as shown in Figure 7, wherein the side of metal unit substrate has colloidal substance 4.
embodiment bis-
The flow chart identical with embodiment mono-(Fig. 2 A to Fig. 2 H) of the metal array basal plate manufacture method in another embodiment of the present invention.Its ray structure forming is taking light-emitting diode as example, and structure and manufacture method are as shown in Fig. 8-12, and Fig. 8 comprises growth substrate 21, and its material can be GaAs, silicon, carborundum, sapphire, indium phosphide, gallium phosphide, aluminium nitride or gallium nitride etc.Then, on growth substrate 21, form epitaxial structure 22.Epitaxial structure 22 forms by epitaxy technique, for example organic metal vapour deposition epitaxy (MOCVD), liquid phase epitaxial method (LPE) or molecular beam epitaxy (MBE) homepitaxy technique.This epitaxial structure 22 at least comprises the first electrical semiconductor layer 23, for example, be N-shaped AlGaInP (Al
xga
1-x)
yin
1-yp layer or N-shaped aluminum indium gallium nitride (Al
xga
1-x)
yin
1-yn layer; Active layer 24 is for example AlGaInP (Al
xga
1-x)
yin
1-yp or aluminum indium gallium nitride (Al
xga
1-x)
yin
1-ythe multiple quantum trap structure that N forms; And the second electrical semiconductor layer 25, be for example p-type AlGaInP (Al
xga
1-x)
yin
1-yp layer or p-type aluminum indium gallium nitride (Al
xga
1-x)
yin
1-yn layer.In addition, the active layer 24 of the present embodiment can be by for example homostyructure, single heterojunction structure, double-heterostructure or stacking the forming of multiple quantum trap structure.Then, on epitaxial structure 22, form the second layer 26 in electrical contact, its material can be tin indium oxide (IndiumTin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin (Cadmium TinOxide), zinc oxide (Zinc Oxide), magnesium oxide (Magnesium Oxide) or titanium nitride (TitaniumNitride) etc.
Then, as shown in Figure 9, the epitaxial structure with the second layer 26 in electrical contact is engaged with temporary base 31 by adhesion coating 32, the modes such as recycling laser lift-off technique, etch process or CMP (Chemical Mechanical Polishing) process remove growth substrate (not shown).
Then as shown in figure 10, after growth substrate 21 removes, expose the surface of the first electrical semiconductor layer 23 of epitaxial structure 22, then form thereon the first layer 28 in electrical contact.The material of the first layer 28 in electrical contact can be the film that tin indium oxide (Indium Tin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin (Cadmium Tin Oxide), zinc oxide (Zinc Oxide), magnesium oxide (Magnesium Oxide), titanium nitride (Titanium Nitride), germanium gold (Ge/Au) or germanium gold nickel (Ge/Au/Ni) form, and optionally on film, forms specific pattern with etch process.Then light-emitting diode is from top to bottom etched to and exposes the second layer 26 in electrical contact from the first layer 28 in electrical contact, the first electrical semiconductor layer 23, active layer 24, the second electrical semiconductor layer 25, form the first electrode 29 respectively at the first layer in electrical contact 28 upper surface again, and the surface exposing in the second layer 26 in electrical contact forms the second electrode 33.Wherein the material of the first electrode and the second electrode can be gold-tin alloy or golden indium alloy.In this embodiment, also the first layer in electrical contact 28 upper surface and/or lower surface can be become to matsurface with the surface etching that the second layer 26 in electrical contact exposes.Then, chip cutting is become to have one by one the component structure tube core of the first electrode 29 and the second electrode 33, and be adhered on glued membrane 34.
Then as shown in figure 11, tube core on glued membrane is directly engaged on the high-termal conductivity metal array basal plate 20 as shown in Fig. 2 H, the first electrode 29 and the second electrode 33 are corresponded respectively on adjacent metal unit substrate 6b, 6a, and between metal unit substrate 6b, 6a, colloidal substance have the function that completely cuts off two electrodes.Remove again upper and lower glued membrane 34 (not shown), temporary base 31 and adhesion coating 32.If when temporary base 31 is light-transmissive substrate, do not need to remove.Next, along Cutting Road, light-emitting diode is cut into multiple chip upside-down mounting type LED core 200 with high-thermal conductive metal cell substrate, as shown in figure 12.Wherein metal unit substrate is made up of 6a, bis-different cell substrates of adjacent area of 6b, and its area is determined by the distance between corresponding the second electrode 33 and the first electrode 29, and its side has colloidal substance 4.
embodiment tri-
An embodiment more of the present invention, its structure and manufacture method are as shown in 13-19 figure.
Figure 13 shows that the structure being formed taking Fig. 4 is example, on reflector 27, define the position of Cutting Road with photoresist 2, then form as shown in figure 14 electrodeposited coating, (its thickness is respectively 10-50 μ m/50-100 μ m/5-20 μ m) to for example electronickelling (7a)/copper (8)/nickel (7b), wherein nickel act as stress within mitigate copper, and can substitute with nickel alloy.Then photoresist is removed, formed multiple tracks Cutting Road 30 (as shown in figure 15).Again heat-resisting colloidal substance 4 is filled up to whole Cutting Road, form utilize colloidal substance to bond high-termal conductivity metal array basal plate (as Figure 16) that multiple metal unit substrates form.Then remove growth substrate 21 (not shown), then on the first electrical semiconductor layer 23, form the first layer 28 in electrical contact, as shown in figure 17.On the first layer in electrical contact, form the first electrode 29, form the second electrode 33 on electronickelling 7b surface, and form multiple tracks Cutting Road 30 with gold-tinted etch process, as shown in figure 18.Carry out die separation with laser or diamond cutter again, light-emitting diode is cut into multiple LED core 300 with high-thermal conductive metal cell substrate, as shown in figure 19.
Although the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, therefore protection scope of the present invention is when being as the criterion depending on the claim person of defining.
Claims (10)
1. a metal array basal plate, comprises:
Multiple metal unit substrates, wherein the area of the plurality of metal unit substrate can be equal to each other or be different;
Glued membrane is adhered to the plurality of metal unit substrate below; And
Colloidal substance, is positioned between the plurality of metal unit substrate to connect the plurality of metal unit substrate,
Wherein this colloidal substance is forever positioned at least two sides of each metal unit substrate, and this colloidal substance is to be positioned at continuously this at least two sides.
2. metal array basal plate as claimed in claim 1, wherein also has photoelectric cell on the plurality of metal unit substrate, and wherein this photoelectric cell can be light-emitting diode, laser diode, solar cell or optical detector etc.
3. a method of making metal array basal plate, comprises step:
Metal substrate is provided, and it has high-termal conductivity;
Adhesive film below this metal substrate;
Utilize the steps such as exposure, etching in this metal substrate, to form patterning; And
Filling colloidal substance is in this patterning, and wherein this colloidal substance can impose energy and solidified to connect multiple metal unit substrates,
Wherein this colloidal substance is forever positioned at least two sides of this each metal unit substrate, and this colloidal substance is to be positioned at continuously this at least two sides.
4. making has a method for the high thermal conductivity photoelectric cell of metal array basal plate, comprises step:
Growth substrate is provided;
Growth epitaxial structure is on this growth substrate, and wherein this epitaxial structure also comprises: the first electrical semiconductor layer; Active layer, on this first electrical semiconductor layer; And the second electrical semiconductor layer, on this active layer;
Form reflector on this epitaxial structure;
Form barrier layer on this reflector to define multiple patternings;
Electroplate the region that at least layer of metal layer is not covered by this barrier layer in this reflector;
Remove this barrier layer;
Filling colloidal substance with continuously around the plurality of patterning and impose energy and solidified, to form a metal array basal plate that forever comprises this colloidal substance;
Remove this growth substrate;
Form electrically connect structure on this epitaxial structure;
Between this epitaxial structure, form multiple Cutting Roads according to multiple patternings; And
Form this photoelectric cell along the plurality of Cutting Road cutting.
5. a tube core for light-emitting component, it can directly carry out encapsulation step and not need separately to add a support plate, comprises:
Metal unit substrate;
Colloidal substance is forever positioned at least two sides of this metal unit substrate, and wherein this colloidal substance can impose energy and solidified, and this colloidal substance is to be positioned at continuously this at least two sides;
Knitting layer is positioned on this metal unit substrate; And
Epitaxial structure is positioned on this knitting layer, and wherein this epitaxial structure at least comprises: the first electrical semiconductor layer; Active layer, on this first electrical semiconductor layer; And the second electrical semiconductor layer, on this active layer;
Wherein, the area of this metal unit substrate is close with this epitaxial structure area.
6. a tube core for light-emitting component, it can directly carry out encapsulation step and not need separately to add a support plate, comprises:
At least two adjacent metal cell substrates;
Colloidal substance is forever between these two adjacent metal cell substrates and be positioned at least two sides of each metal unit substrate, and this colloidal substance is to be positioned at continuously this at least two sides; And
Epitaxial structure is positioned on these at least two adjacent metal cell substrates, and wherein this epitaxial structure at least comprises: the first electrical semiconductor layer; Active layer, on this first electrical semiconductor layer; And the second electrical semiconductor layer, on this active layer;
And the area summation of these at least two adjacent metal cell substrates approximately equates with this epitaxial structure area.
7. a method of making light-emitting component, comprises:
Growth substrate is provided;
Form epitaxial structure on this growth substrate;
Metal array basal plate is provided, and its structure is formed by structure claimed in claim 1;
Provide knitting layer to engage this epitaxial structure and this metal array basal plate;
Remove this growth substrate;
Form multiple Cutting Roads on this epitaxial structure and this metal array basal plate; And
Form this light-emitting component along the plurality of Cutting Road cutting.
8. method as claimed in claim 7, wherein this light-emitting component can directly carry out encapsulation step and not need separately to add a support plate.
9. a method of making light-emitting component, comprises:
Growth substrate is provided;
Form epitaxial structure on this growth substrate;
Temporary base is provided;
Adhesion coating adhere this epitaxial structure and this temporary base are provided;
Remove this growth substrate;
Form electrically connect structure on this epitaxial structure;
Metal array basal plate is provided, and its structure is formed by structure claimed in claim 1;
Joint has this epitaxial structure and this metal array basal plate of this electrically connect structure;
Remove this temporary base;
Form multiple Cutting Roads on this epitaxial structure and this metal array basal plate; And
Form this light-emitting component along the plurality of Cutting Road cutting.
10. method as claimed in claim 9, wherein this light-emitting component can directly carry out encapsulation step and not need separately to add a support plate.
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| CN200810136131.7A CN101626000B (en) | 2008-07-10 | 2008-07-10 | Metal array basal plate, photoelectric element, light-emitting element and manufacturing method thereof |
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| CN200810136131.7A CN101626000B (en) | 2008-07-10 | 2008-07-10 | Metal array basal plate, photoelectric element, light-emitting element and manufacturing method thereof |
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| CN102496667B (en) * | 2011-12-20 | 2014-05-07 | 中国科学院半导体研究所 | Method for manufacturing GaN-based thin-film chip |
| KR20160034099A (en) * | 2014-09-19 | 2016-03-29 | 삼성전기주식회사 | Printed circuit board and electronic component package having the same |
| CN112185983B (en) * | 2019-06-17 | 2023-03-24 | 成都辰显光电有限公司 | Display panel and display device |
| CN113851563B (en) * | 2021-08-26 | 2023-11-21 | 江苏宜兴德融科技有限公司 | Thin film type semiconductor chip structure and photoelectric device using same |
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| CN1627489A (en) * | 2003-12-10 | 2005-06-15 | 玄基光电半导体股份有限公司 | Load supporting base plate for semiconductor chip and fabricating method |
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| CN1202578C (en) * | 2001-12-07 | 2005-05-18 | 洲磊科技股份有限公司 | Method for forming semiconductor element with metal base board |
| JP2003218398A (en) * | 2002-01-18 | 2003-07-31 | Citizen Electronics Co Ltd | Surface mount type light emitting diode and its manufacturing method |
| CN2681355Y (en) * | 2003-12-10 | 2005-02-23 | 玄基光电半导体股份有限公司 | LED packaging element made by metallic base plate |
| CN100401535C (en) * | 2004-01-07 | 2008-07-09 | 洲磊科技股份有限公司 | Method for forming light-emitting diode with metal base plate |
| CN101064261A (en) * | 2006-04-25 | 2007-10-31 | 矽品精密工业股份有限公司 | Semiconductor package and its array arranged substrate structure and production method |
| CN101060153A (en) * | 2007-05-15 | 2007-10-24 | 佛山市国星光电科技有限公司 | A side LED and its manufacture process |
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| CN1627489A (en) * | 2003-12-10 | 2005-06-15 | 玄基光电半导体股份有限公司 | Load supporting base plate for semiconductor chip and fabricating method |
Non-Patent Citations (2)
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| JP特开2008-135526A 2008.06.12 * |
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