CN101060153A - A side LED and its manufacture process - Google Patents
A side LED and its manufacture process Download PDFInfo
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- CN101060153A CN101060153A CNA2007100279931A CN200710027993A CN101060153A CN 101060153 A CN101060153 A CN 101060153A CN A2007100279931 A CNA2007100279931 A CN A2007100279931A CN 200710027993 A CN200710027993 A CN 200710027993A CN 101060153 A CN101060153 A CN 101060153A
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 71
- 239000000084 colloidal system Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 69
- 238000012856 packing Methods 0.000 claims description 19
- 238000005538 encapsulation Methods 0.000 claims description 17
- 238000000465 moulding Methods 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 6
- 206010070834 Sensitisation Diseases 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 230000008313 sensitization Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 241000218202 Coptis Species 0.000 claims description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 2
- 238000003491 array Methods 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The disclosed side LED comprises: a core in the following-said cavity, a package colloid, some bonding lines, and a package frame with cavity-structure metal base, wherein the metal base is divided into insulated two electrodes, the bonding line connects the core electrode and the base electrode, and the package colloid packs all members together, and connects the divided parts of base. The product has well heat dispersion, stable photoelectric performance, and can load large current. This invention is low cost.
Description
Technical field
The present invention relates to the light-emitting diode field, but more particularly relate to a kind ofly have that the good heat dissipation effect loaded current is big, photoelectric characteristic is stable, the lateral light-emitting diode of low cost of manufacture.
Background technology
Lateral light-emitting diode has been widely used in the light source of the back light unit of small-medium size LCD such as PDA, mobile phone, MP3 at present.At present, the brightness of lateral light-emitting diode, thickness etc. all develop into than higher level, as Chinese patent application number is 200510133995.X, the applying date is on August 23rd, 2006, denomination of invention is the side view LED encapsulation with the lead frame structure that is designed to improve resin flows, and main contents have related to a kind of side view LED encapsulation of the LCD of being used for back light unit, and this side view LED encapsulation comprises: led chip, the strip lead frame has the toothing that is formed in its lateral edges.Led chip is assemblied on the surface of lead frame.The package main body of one is formed from a resin, and comprise the hollow with the cavity that is used to hold led chip the first half and by lead frame and the first half separate solid back half.The toothing of lead frame can improve resin flows, thereby even the LED encapsulation is done to such an extent that also can guarantee stability as thin as a wafer.
Be described below referring to figs. 1 through Fig. 2: Fig. 1 is the encapsulation front view of known lateral light-emitting diode, and Fig. 2 is the encapsulation cutaway view of known lateral light-emitting diode.
At first bar shaped lead frame A is placed in as shown in Figure 3 the mold, and resin flows with groove after injecting mold, adds curing molding behind full all spaces, forms the cavity of placing chip.
Because known product adopts the structure of plastic packaging chassis body, heat dissipation problem is not settled properly, and the photoelectricity stability characteristic (quality) is subjected to bigger restriction.Along with improving constantly of light-emitting diode production technology, the light-emitting diode range of application constantly enlarges, and light-emitting diode must be considered heat dissipation problem, and for a long time, known framework adopts the technology of traditional plastic packaging that this problem is effectively solved.
Summary of the invention
Purpose of the present invention is exactly the stable lateral light-emitting diode of a kind of good heat dissipation effect, photoelectric characteristic that provides for the deficiency that solves prior art.
Another object of the present invention is to provide the manufacturing process of a kind of good heat dissipation effect, lateral light-emitting diode that photoelectric characteristic is stable.
The present invention adopts following technical solution to realize above-mentioned purpose: a kind of lateral light-emitting diode, comprise tube core, packing colloid, bonding line, the package main body support, it is characterized in that, the package main body support adopts the metal substrate with cavity body structure, two parts that metal substrate is divided into mutually insulated form two electrodes, tube core is placed in the cavity of metal substrate, bonding line is tube connector core electrode and metal substrate another part electrode respectively, packing colloid is with tube core, the metal substrate cavity, bonding line, the electrode pin of metal substrate encapsulates, and metal substrate two parts are at interval linked together.
As further specifying of such scheme, be provided with one or more tube cores in the cavity of described metal substrate.
Described tube core is placed in the cavity of metal substrate by adhesive.
Described cavity body structure is ellipse or rectangle or strip.
Described metallic substrate surfaces is provided with coating, this coating for silver or the gold, palladium other have the metal of reflecting properties.
The encapsulation upper surface is plane, concavees lens type or lenticular lens type after the described packing colloid moulding.
Described adhesive is conducting resinl, insulating cement or auxiliary welding material.
Described one or more tube core, bonding line, packing colloid, metal substrate constitute a unit, and the metal substrate of some unit forms the cell array that an integral body constitutes the capable N row of M, M 〉=1 wherein, N 〉=1.
The manufacturing process of lateral light-emitting diode of the present invention is characterized in that, it comprises following production stage:
A, metal substrate moulding; Metal substrate is adopted half etching process to be processed into to have the regular profile of cavity body structure, carry out complete corrosion failure simultaneously;
B, tube core are laid; Light-emitting diode chip for backlight unit is placed in the metal substrate inside cavity respectively;
C, lead-in wire bonding; The tube core electrode is linked to each other with another electrode pin of gold thread and metal substrate;
D, encapsulation; The semi-products that lead-in wire bonding in the c process is finished encapsulate the resin solidification moulding;
E, branch plate; The combination of lateral light-emitting diode metal substrate is separated into individual devices; Each device has independent structures and electrical characteristic;
F, test; Product is carried out photoelectric parameter testing, be divided into different brackets;
G, tape package; The product of being up to the standards in the f process are packed warehouse-in.
Metal substrate is through plate-making, substrate coating sensitization oil, exposure, microcorrosion and cleaning in described half etching process, and the metal substrate corrosion is made up for one or more cell arrays become the metal substrate of the capable N row of M, M 〉=1 wherein, N 〉=1.
The beneficial effect that the present invention adopts above-mentioned technical solution to reach is:
1, the present invention adopts the metal substrate support with cavity body structure to use known plastic packaging support as main packing bearing main body as an alternative, two parts that metal substrate is divided into straight insulation mutually form two electrodes, tube core is placed in the metal substrate cavity by adhesive, bonding line is tube connector core electrode and metal substrate another part electrode respectively, good heat conductivity, but loaded current is big, it is poor to have solved traditional lateral light-emitting diode radiating effect, the problem that photoelectricity stability is low, overcome the idea that traditional package main body support adopts plastic packaging for a long time, luminous efficiency improves greatly.
2, the present invention is processed into metallic plate the regular profile that has cavity body structure by half etching process, then tube core is placed in the cavity body structure inside of corrosion moulding on the metal substrate, the lead-in wire bonding finish after with packing colloid with die package, utilize packing colloid to connect the electrode of lateral light-emitting diode simultaneously, at last whole metal substrate is separated into the lateral light-emitting diode with absolute construction and electrical characteristic, this technology is designed to guarantee internal electrical connection stability frame structure with lateral light-emitting diode, and effectively reduce manufacturing cost, the experiment proved that its manufacturing cost is reduced to 1/3 of traditional lateral light-emitting diode production cost.
Description of drawings
Fig. 1 is the encapsulation front view of known lateral light-emitting diode;
Fig. 2 is the encapsulation cutaway view of known lateral light-emitting diode;
Fig. 3 is the encapsulation mold of known lateral light-emitting diode;
Fig. 4 is that lateral light-emitting diode metal substrate of the present invention partly etches plane graph;
Fig. 5 is that lateral light-emitting diode chip mount of the present invention is finished plane graph;
Fig. 6 is that lateral light-emitting diode lead-in wire bonding of the present invention is finished plane graph;
Fig. 7 is the structure chart after the final separation of lateral light-emitting diode of the present invention;
Fig. 8 is the structure vertical view after the final separation of lateral light-emitting diode of the present invention;
Fig. 9 is the structure chart after the final separation of lateral light-emitting diode in the embodiment of the invention.
Description of reference numerals: 1, metal substrate 2, cavity body structure 3, perforation 4, tube core 5, bonding line 6, electrode pin 7, electrode 8, packing colloid
Embodiment
As shown in Figure 7, a kind of lateral light-emitting diode of the present invention, comprise tube core 4, packing colloid 9, adhesive, bonding line 5, employing has the metal substrate 1 of cavity body structure 2 as package main body, two parts that metal substrate 1 is divided into mutually insulated form two electrodes 7, tube core 4 is placed in the cavity of metal substrate 1 by adhesive, adhesive is a conducting resinl, insulating cement or auxiliary welding material, cavity body structure 2 is oval, rectangle, strip or other shape, bonding line 5 is tube connector core electrode and metal substrate another part electrode respectively, packing colloid 8 is with tube core 4, the metal substrate cavity, bonding line 5, electrode pin 6 encapsulation of metal substrate are got up, and metal substrate 1 two parts are at interval linked together.Each tube core, bonding line, packing colloid, metal substrate constitute a unit, and the metal substrate of some unit forms the cell array that an integral body constitutes the capable N row of M, M 〉=1 wherein, N 〉=1.The encapsulation upper surface is designed to plane, concavees lens type or lenticular lens type according to application demand after packing colloid 8 moulding, and in the present embodiment, packing colloid 8 upper surfaces are shaped as sphere, and packing colloid 8 can be water white transparency, scattering, fluorescent glue etc.Metal substrate 1 overlay coating is silver or other reflecting properties preferred metal, as palladium, gold.
Lateral light-emitting diode manufacture process of the present invention is as follows:
1, metal substrate moulding; As shown in Figure 4, this embodiment adopts half etching process machine-shaping with metal substrate 1, forms cavity body structure 2, carries out corrosion failure simultaneously, and perforation 3 requires corrosion fully, to guarantee possessing absolute construction and complete electrical characteristic after the device moulding.More than one cell array becomes the metal substrate combination of the capable N of M row, M 〉=1 wherein, N 〉=1; The main technique route is as follows:
Metal substrate preparation → plate-making → base plate coating sensitization oil → exposure → microcorrosion → cleaning
2, tube core is laid; As shown in Figure 5, tube core 4 is placed in metal substrate inside cavity relevant position respectively;
3, line bonding; As shown in Figure 6, the tube core electrode with light-emitting diode links to each other with another electrode pin 6 of bonding line 5 and metal substrate;
4, encapsulation; The semi-products that the lead-in wire bonding is finished encapsulate the resin solidification moulding;
5, divide plate; The combination of lateral light-emitting diode metal substrate is separated into individual devices; Each device has independent structures and electrical characteristic;
6, test; Product is carried out photoelectric parameter testing, be divided into different brackets;
7, tape package; The product of being up to the standards are packed warehouse-in.
As shown in Figure 7, the product of finishing through the encapsulation of undue plate operation has independent structures and electrical characteristic.
As shown in Figure 9, the difference of present embodiment and above-mentioned execution mode is, a plurality of tube cores are set in the cavity of described same metal substrate 1, and a plurality of tube cores, bonding line and metal substrate are packaged in and constitute a unit in the packing colloid.
As previously discussed, only be preferred embodiment of the present invention, be not to be used for limiting scope of the present invention, those skilled in the art also can do numerous modifications and variations, under the spirit that does not break away from invention, all in the claimed scope of the present invention.
Claims (11)
1, a kind of lateral light-emitting diode, comprise tube core, packing colloid, bonding line, the package main body support, it is characterized in that, the package main body support adopts the metal substrate with cavity body structure, two parts that metal substrate is divided into mutually insulated form two electrodes, tube core is placed in the cavity of metal substrate, bonding line is tube connector core electrode and metal substrate another part electrode respectively, packing colloid encapsulates the electrode pin of tube core, metal substrate cavity, bonding line, metal substrate, and two parts of metal substrate mutually insulated are linked together.
2, a kind of lateral light-emitting diode according to claim 1 is characterized in that, is provided with one or more tube cores in the cavity of described metal substrate.
3, a kind of lateral light-emitting diode according to claim 1 and 2 is characterized in that, described tube core is placed in the cavity of metal substrate by adhesive.
4, a kind of lateral light-emitting diode according to claim 3 is characterized in that, described adhesive is conducting resinl, insulating cement or auxiliary welding material.
5, a kind of lateral light-emitting diode according to claim 1 is characterized in that, described cavity body structure is ellipse or rectangle or strip.
6, a kind of lateral light-emitting diode according to claim 1 is characterized in that, described metallic substrate surfaces is provided with the coat of metal with reflecting properties.
7, a kind of lateral light-emitting diode according to claim 6 is characterized in that, the described coat of metal is silver, gold or palladium.
8, a kind of lateral light-emitting diode according to claim 1 is characterized in that, the encapsulation upper surface is plane, concavees lens type or lenticular lens type after the described packing colloid moulding.
9, a kind of lateral light-emitting diode according to claim 1, it is characterized in that, one or more tube cores in the described same packing colloid, bonding line and metal substrate constitute a unit, the metal substrate of some unit forms the cell array that an integral body constitutes the capable N row of M, M 〉=1 wherein, N 〉=1.
According to the manufacturing process of the described a kind of lateral light-emitting diode of claim 1～9, it is characterized in that 10, it comprises following production stage:
A, metal substrate moulding; Metal substrate is adopted half etching process to be processed into to have the regular profile of cavity body structure, carry out complete corrosion failure simultaneously;
B, tube core are laid; Light-emitting diode chip for backlight unit is placed in the metal substrate inside cavity respectively;
C, lead-in wire bonding; The tube core electrode is linked to each other with another electrode pin of gold thread and metal substrate;
D, encapsulation; The semi-products that lead-in wire bonding in the c process is finished encapsulate the resin solidification moulding;
E, branch plate; The combination of lateral light-emitting diode metal substrate is separated into individual devices; Each device has independent structures and electrical characteristic;
F, test; Product is carried out photoelectric parameter testing, be divided into different brackets;
G, tape package; The product of being up to the standards in the f process are packed warehouse-in.
11, the manufacturing process of a kind of lateral light-emitting diode according to claim 10, it is characterized in that, the metal substrate of half etching process in the described a step is through plate-making, substrate coating sensitization oil, exposure, microcorrosion and clean shaping, the metal substrate corrosion becomes the metal substrate combination of the capable N row of M for one or more cell arrays, M 〉=1 wherein, N 〉=1.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100279931A CN101060153A (en) | 2007-05-15 | 2007-05-15 | A side LED and its manufacture process |
| PCT/CN2007/002949 WO2008138183A1 (en) | 2007-05-15 | 2007-10-15 | Side emission type led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100279931A CN101060153A (en) | 2007-05-15 | 2007-05-15 | A side LED and its manufacture process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101060153A true CN101060153A (en) | 2007-10-24 |
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ID=38866133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100279931A Pending CN101060153A (en) | 2007-05-15 | 2007-05-15 | A side LED and its manufacture process |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101060153A (en) |
| WO (1) | WO2008138183A1 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101626000A (en) * | 2008-07-10 | 2010-01-13 | 晶元光电股份有限公司 | Metal array basal plate, photoelectric element, light-emitting element and manufacturing method thereof |
| CN102005529A (en) * | 2010-05-11 | 2011-04-06 | 日月光半导体制造股份有限公司 | Encapsulation structure of a light emitting diode and encapsulation production technology |
| CN102044620A (en) * | 2010-11-11 | 2011-05-04 | 深圳市瑞丰光电子股份有限公司 | LED substrate and manufacturing method thereof and LED |
| CN102569553A (en) * | 2011-12-31 | 2012-07-11 | 深圳市蓝科电子有限公司 | Packaging technology for LED (light-emitting diode) |
| CN102691935A (en) * | 2012-05-22 | 2012-09-26 | 深圳市华星光电技术有限公司 | Backlight system, manufacturing method of backlight system and flat panel display device |
| CN102814596A (en) * | 2011-06-07 | 2012-12-12 | 英飞凌科技股份有限公司 | Solder alloys and arrangements |
| CN102916112A (en) * | 2012-10-31 | 2013-02-06 | 佛山市国星光电股份有限公司 | Large power LED and manufacturing method thereof |
| CN103270612A (en) * | 2011-10-10 | 2013-08-28 | 朱宰哲 | Led package |
| CN103378262A (en) * | 2012-04-26 | 2013-10-30 | 展晶科技(深圳)有限公司 | Light emitting diode and encapsulating method thereof |
| CN103985677A (en) * | 2014-06-11 | 2014-08-13 | 扬州江新电子有限公司 | Ultrathin plastic package semiconductor component frame, ultrathin plastic package semiconductor component and manufacturing method of ultrathin plastic package semiconductor component |
| WO2014166310A1 (en) * | 2013-04-08 | 2014-10-16 | 厦门市三安光电科技有限公司 | Encapsulating structure for improving vertical led chip luminance |
| CN108491113A (en) * | 2018-03-05 | 2018-09-04 | 业成科技（成都）有限公司 | Ultrasonic wave touch device and preparation method thereof |
| CN108807171A (en) * | 2018-05-24 | 2018-11-13 | 烟台台芯电子科技有限公司 | A kind of diode low-temp ceramics packaging process |
| CN117936680A (en) * | 2024-01-25 | 2024-04-26 | 广东省旭晟半导体股份有限公司 | Packaging colloid structure and packaging method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4215306B2 (en) * | 1998-08-27 | 2009-01-28 | シチズン電子株式会社 | Semiconductor package and manufacturing method thereof |
| JP2003163378A (en) * | 2001-11-26 | 2003-06-06 | Citizen Electronics Co Ltd | Surface mount light emitting diode and its manufacturing method |
| KR100593943B1 (en) * | 2005-04-30 | 2006-06-30 | 삼성전기주식회사 | Method for manufacturing light emitting diode package |
-
2007
- 2007-05-15 CN CNA2007100279931A patent/CN101060153A/en active Pending
- 2007-10-15 WO PCT/CN2007/002949 patent/WO2008138183A1/en active Application Filing
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN102005529A (en) * | 2010-05-11 | 2011-04-06 | 日月光半导体制造股份有限公司 | Encapsulation structure of a light emitting diode and encapsulation production technology |
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