CN103985677B - Ultra-thin plastic packaging semiconductor components and devices framework, components and parts and preparation method thereof - Google Patents
Ultra-thin plastic packaging semiconductor components and devices framework, components and parts and preparation method thereof Download PDFInfo
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- CN103985677B CN103985677B CN201410256976.5A CN201410256976A CN103985677B CN 103985677 B CN103985677 B CN 103985677B CN 201410256976 A CN201410256976 A CN 201410256976A CN 103985677 B CN103985677 B CN 103985677B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
Abstract
The invention discloses a kind of ultra-thin plastic packaging semiconductor components and devices framework, described framework forms more than one layer for accommodating the step of chip by the mechanical method molding or corroding.Also disclose a kind of ultra-thin plastic packaging semiconductor components and devices, including: an above-mentioned ultra-thin plastic packaging semiconductor components and devices framework；More than one chip, multiple welding wires and pin, and plastic-sealed body.Also disclose the preparation method of ultra-thin plastic packaging semiconductor components and devices.The ultra-thin plastic packaging semiconductor components and devices framework of the present invention is designed to multilayer steps structure, be conducive to the reduction of components and parts overall package thickness, and it is difficult to Rose, assemble the ultra-thin plastic packaging semiconductor components and devices package dimension obtained and reduce, be suitably applied in ultrathin electronic product.When on framework and pin, the design of through hole makes to encapsulate, encapsulating material can be clamp-oned in through hole, makes plastic-sealed body and framework combine tightr.
Description
Technical field
The present invention relates to a kind of ultra-thin plastic packaging semiconductor components and devices framework, components and parts and preparation method thereof, belong to and partly lead
Volume elements device fabrication arts.
Background technology
Along with the lightening of electronic product and the multifunction of properties of product, the assembling mode of product gradually multi-chip,
Packing forms is by the SMD plug-in type that progressively instead of, and towards miniaturization, the aspect development of ultrathin.This is accomplished by relying on first
The designing technique entered, material technology, particularly Mems technology etc. realizes this series of target.The development of Mems technology makes micro-
The research and development of type components and parts and module have brought up to a new level, utilize semiconductor packaging by micron-sized sensitivity
The integrated mainstream development technology being the most increasingly becoming chip design of element, signal processor, data processing equipment,
Simultaneously for due to odjective cause can not the chip of Combination Design, the mode often using multi-chip to assemble, realize product many
The needs of function.
In multi-chip packaging technology, the thickness being frequently encountered chip chamber is different, and situation not of uniform size, this can cause whole
The package dimension of individual finished product becomes big (length degree).As a example by paster velocity sensor, as it is shown in figure 1, use plane framework,
Being assembled with 1 chip 3 on framework, the thickness of framework 1 is 0.11mm, owing to during operation, the radian of welding wire 4 needs to reach 0.10mm
Guarantee welding wire will not touch other positions of framework or chip, and therefore the thickness of plastic-sealed body 6 needs to reach 0.45mm
Guarantee not Rose, that is the minimum thickness of velocity sensor of prior art is 0.45mm.For the electricity doing thinner and thinner at present
For sub-product such as mobile phone, panel computer, it is ultra-thin that the size of the semiconductor components and devices of encapsulation particularly thickness has a strong impact on it
Change process.And due to the heterogeneity of frame material Yu encapsulating material, encapsulation semiconductor components and devices is easy after using a period of time
Cracking, affects product quality.
Summary of the invention
It is an object of the invention to provide a kind of ultra-thin plastic packaging semiconductor components and devices frame that can effectively reduce chip package thickness
Frame.
For reaching goal of the invention, the technical solution used in the present invention is: a kind of ultra-thin plastic packaging semiconductor components and devices framework, uses
Assemble in more than one chip, described framework forms more than one layer for accommodating core by the mechanical method molding or corroding
The step of sheet, framework is at the thickness of stepped locations less than the thickness of other positions of framework, and the thickness of same stepped locations is identical, no
Can differ with the thickness of stepped locations.
Preferably, described framework material therefor is copper alloy.
The invention also discloses a kind of ultra-thin plastic packaging semiconductor components and devices, including:
One above-mentioned ultra-thin plastic packaging semiconductor components and devices framework；
More than one chip, is bonded in the stepped locations of ultra-thin plastic packaging semiconductor components and devices framework；
Multiple welding wires and pin, welding wire one end is connected on chip, and the other end is connected with pin；
Plastic-sealed body, whole, the welding wire of all or part of, the chip of ultra-thin plastic packaging semiconductor components and devices framework whole and drawing
Being partially encapsulated in plastic-sealed body of pin.
Preferably, within described framework is positioned at plastic-sealed body, the part that will not be covered by chip be provided with multiple through hole, described logical
Bore dia is less than 0.1mm.
Preferably, framework is with the thick one side of plastic-sealed body on it as front, and another side is reverse side, and described through hole is just being positioned at framework
One end diameter in face is less than one end diameter being positioned at framework reverse side.
Preferably, described pin is positioned at the part within plastic-sealed body and is provided with multiple through hole, and described through-hole diameter is less than
0.1mm。
The invention also discloses the preparation method of above-mentioned ultra-thin plastic packaging semiconductor components and devices, its step includes:
A, the copper alloy sheet material of suitable thickness is cut into frame shape, cleaning frame member surface；
B, need not be formed on the surface of position of step uniformly one layer of anti-corrosion liquid of coating at framework, framework is immersed corrosive liquid
In corrode, take out when eroding to predetermined thickness, form ground floor step, wherein the formula of corrosive liquid is: add quality in water
Mark is the FeCl of 10 ~ 15%3, the CuCl of 3 ~ 5%2With 2 ~ 4% HCl；
C, in need time, repeat step b and form the second layer or more layers step；
D, use temperature 50 ~ 60 DEG C, mass fraction is that the NaOH solution spray framework surface of 4-8% is to remove surface coating
Anti-corrosion liquid, spray pressure is 2 ~ 3kg/cm2, then with the Water spray framework surface of 30 ~ 40 DEG C；
E, at temperature 350-400 DEG C, chip is placed on the stepped locations of framework, the fusing of the back of the body layer gold of chip surface,
Merge with framework ledge surface, form Ohmic contact；
F, one end of copper welding lead being welded on the welding zone of chip, the other end is welded on pin, formed chip with
Welding wire between pin；
G, will welding after framework entirety put in casting mold, make framework, chip, the whole and pin of welding wire and welding wire
Welding one end be positioned at cast chamber, then by by silica, epoxy resin, silicon powder component encapsulating material heating and melting after
Inject in cast chamber, take out after it cools and solidifies.
Preferably, after step c completes, by framework is overall and pin all coats one layer of anti-corrosion liquid, will not core at framework
Anti-corrosion liquid is melted the pore one by one by one end to be packaged by position and pin that sheet covers, and pore is positive and negative at framework
The position one_to_one corresponding in face, the pore diameter that the pore diameter of its middle frame reverse side position is corresponding more than framework front position, so
After framework immersed in corrosive liquid corrode, erode to take out after through hole is formed, then carry out step d.
Preferably, after step c completes, one end to be packaged is used by position and the pin that will not be covered by chip by framework
Mould punching goes out multiple through hole, and the through hole the stamped out diameter in side, framework front is less than the diameter at framework reverse side.
The ultra-thin plastic packaging semiconductor components and devices framework of the present invention is designed to multilayer steps structure, is suitable for different-thickness
Chip is assembled thereon, reduces components and parts integral thickness, and the radian of welding wire can also reduce, beneficially components and parts overall package thickness
Reduction, and be difficult to Rose, assemble the ultra-thin plastic packaging semiconductor components and devices package dimension obtained and reduce, be suitably applied ultra-thin electricity
In sub-product.Owing to chip is positioned on step, the difference in height between chip and framework reduces, and controls the difficulty fall of welding wire radian
Low, the difficulty therefore welding welding wire also reduces, and is conducive to improving yield rate.On framework, the design of through hole makes to encapsulate material during encapsulation
Material can be clamp-oned in through hole, forms " nail " one by one between plastic-sealed body and framework, makes plastic-sealed body and framework combine tighter
Close, it is difficult to layering, cracking.Plastic-sealed body can more firmly be combined by the up-thin-low-thick moulding of through hole with framework.
Accompanying drawing explanation
Fig. 1 is the structural representation of the paster velocity sensor of prior art.
Fig. 2 is the structural representation of the ultra-thin plastic packaging velocity sensor framework of the embodiment of the present invention 1.
Fig. 3 is the front schematic view of the high-precision programmable quartz clock module frame of the embodiment of the present invention 3, figure middle frame
Interior white portion is openwork part.
Fig. 4 is the reverse side schematic diagram of the high-precision programmable quartz clock module frame of the embodiment of the present invention 3, figure middle frame
Interior white portion is openwork part.
Fig. 5 is the Facad structure schematic diagram before the high-precision programmable quartz clock module encapsulation of the embodiment of the present invention 3, figure
White portion in middle frame is openwork part.
Fig. 6 is the inverse layer structure schematic diagram after the high-precision programmable quartz clock module encapsulation of the embodiment of the present invention 3, figure
White portion in middle frame is openwork part, and black integral part is crystal oscillator, and the part that black box is framed is plastic-sealed body.
Below in conjunction with the accompanying drawings embodiments of the present invention are further detailed.
Detailed description of the invention
Embodiment 1
This ultra-thin plastic packaging semiconductor components and devices is ultra-thin plastic packaging velocity sensor, and its preparation methods steps includes:
A, the copper alloy sheet material of 0.11mm thickness is cut into frame shape, cleaning frame member surface；
B, need not be formed on the surface of position of step uniformly one layer of anti-corrosion liquid of coating at framework, anti-corrosion liquid can use light
Cause resist, it would however also be possible to employ other are corrosion-resistant, the Polymer Solution that easily condenses after coating, such as polyvinyl alcohol-cinnamic acid fat
Class solution, immerses framework in corrosive liquid and corrodes, and erodes to take out when step thicknesses is 0.05mm, forms ground floor platform
Rank, wherein the formula of corrosive liquid is: add the FeCl that mass fraction is 10% in water3, the CuCl of 5%2With 2% HCl, according to corrosion speed
Degree determines etching time；
C, overall for framework and pin are all coated one layer of anti-corrosion liquid, in the position that framework will not be covered by chip and
Anti-corrosion liquid is melted the pore one by one by one end to be packaged by pin, and pore is the position of framework positive and negative one a pair
Should, the pore diameter that the pore diameter of its middle frame reverse side position is corresponding more than framework front position, then immerses corruption by framework
Erosion liquid corrodes, erodes to take out after through hole is formed；
D, with temperature 50 C, mass fraction be 4% NaOH solution spray framework and pin surface to remove surface coating
Anti-corrosion liquid, spray pressure is 3kg/cm2, then Water spray framework and pin surface with 30 DEG C are to remove anti-corrosion liquid completely；
E, at temperature 350 DEG C, velocity sensor chip is placed on the stepped locations of framework, the back of the body of chip surface gold
Layer fusing, merges with framework ledge surface, forms Ohmic contact；
F, one end of copper welding lead being welded on the welding zone of chip, the other end is welded on pin, formed chip with
Welding wire between pin, the radian of welding wire is 0.06mm；
G, will welding after framework entirety put in casting mold, make framework, chip, the whole and pin of welding wire and welding wire
Welding one end be positioned at cast chamber, then by by silica, epoxy resin, silicon powder component encapsulating material heating and melting after
Injecting in cast chamber, take out after it cools and solidifies, package thickness is 0.30mm.
The structural representation of the ultra-thin plastic packaging velocity sensor after encapsulation is shown in that Fig. 2, framework 1 are provided with a step 2, chip
3 be positioned in step 2, and welding wire 4 one end connects chip 3, and the other end connects pin 5, and plastic-sealed body 6 is by framework 1, chip 3, welding wire 4
In all the part with pin 5 is encapsulated in.Laser lettering 7 it is additionally provided with on plastic-sealed body.It is additionally provided with on the position of the non-step of framework 1
Up-thin-low-thick through hole 8.Its middle frame integral thickness is 0.11mm, and step thicknesses is 0.05mm, and the radian of welding wire 4 is
The consistent size of 0.06mm, pin and framework, for 0.11mm, the thickness of pin can also be slightly thicker, last plastic-sealed body
Thickness is 0.30mm, and the end thicker than the encapsulation of existing velocity sensor decreases 0.15mm.Because plastic-sealed body is in framework front
Thickness is higher, extremely low at the thickness of framework reverse side, therefore the place of plastic-sealed body and framework cracking the most just at framework reverse side and
The place of plastic-sealed body contact, being designed to up-thin-low-thick through hole can prevent preferably by the combination of framework reverse side Yu plastic-sealed body
Plastic-sealed body ftractures, comes off.
For the requirement of through-hole diameter, the most relevant with the area of plastic-sealed body, the area of plastic-sealed body is big, and through-hole diameter is permissible
Bigger once the area of plastic-sealed body is little, and the diameter of through hole diminishes the most accordingly.
Embodiment 2
This ultra-thin plastic packaging semiconductor components and devices is ultra-thin plastic packaging acoustoelectric sensor, and its preparation methods steps includes:
A, the copper alloy sheet material that thickness is 0.11mm is cut into frame shape, cleaning frame member surface；
B, need not be formed on the surface of position of step uniformly one layer of anti-corrosion liquid of coating at framework, framework is immersed corrosive liquid
In corrode, erode to when step thicknesses is 0.05mm take out, formed ground floor step, wherein the formula of corrosive liquid is: water
In add the FeCl that mass fraction is 15%3, the CuCl of 3%2With 4% HCl；
One end mould punching to be packaged is gone out multiple logical by c, the position that will not be covered by chip by framework and pin
Hole, the through hole the stamped out diameter in side, framework front is less than the diameter at framework reverse side；
D, use temperature 60 C, mass fraction is that the NaOH solution spray framework surface of 8% is to remove the against corrosion of surface coating
Liquid, spray pressure is 3kg/cm2, then with the Water spray framework surface of 40 DEG C；
E, at temperature 400 DEG C, chip is placed on the stepped locations of framework, the fusing of the back of the body layer gold of chip surface, with frame
Frame ledge surface merges, and forms Ohmic contact；
F, one end of copper welding lead being welded on the welding zone of chip, the other end is welded on pin, formed chip with
Welding wire between pin；
G, will welding after framework entirety put in casting mold, make framework, chip, the whole and pin of welding wire and welding wire
Welding one end be positioned at cast chamber, then by by silica, epoxy resin, silicon powder component encapsulating material heating and melting after
Inject in cast chamber, take out after it cools and solidifies, obtain ultra-thin plastic packaging velocity sensor.
The ultra-thin plastic packaging velocity sensor obtained is consistent with the structure of embodiment 1.
Embodiment 3
This ultra-thin plastic packaging semiconductor components and devices is high-precision programmable quartz clock module, and its preparation methods steps includes:
A, by the copper alloy sheet material slitting dress frame shape of thickness 0.3mm, clean its surface, each strip frames up
Frame can cut into multiple high-precision programmable quartz clock module frame in subsequent step；
B, need not be formed on the surface of position of step uniformly one layer of anti-corrosion liquid of coating at the strip frame that frames up, strip is framed up
Frame immerses in corrosive liquid and corrodes, and erodes to take out when step thicknesses is 0.2mm, forms ground floor step, the first of formation
Layer step is positioned at framework front, and wherein the formula of corrosive liquid is: add the FeCl that mass fraction is 12% in water3, the CuCl of 4%2With 3%
HCl；
C, need not be formed on the surface of position of second layer step uniformly one layer of anti-corrosion liquid of coating at the strip frame that frames up, will
Framework immerses in corrosive liquid and corrodes, and erodes to take out when step thicknesses is 0.1mm, forms second layer step, the of formation
Quadruple board platform component level is in framework reverse side, and the frame that strip framed up need not uniformly coat on the surface of position of hollow out one layer of anti-corrosion liquid, so
After strip framed up frame immerse in corrosive liquid and corrode, erode to take out after the hollow out that strip frames up on frame is formed；
D, by temperature 55 DEG C, mass fraction be 6% NaOH solution spray strip frame up frame surface to remove surface coating
Anti-corrosion liquid, spray pressure is 2.5kg/cm2, then frame up frame surface by the Water spray strip of 35 DEG C；
E, at temperature 380 DEG C, programmable chip is placed in strip and frames up the ground floor platform in each framework front of frame
Component level is put, and is placed in by crystal oscillator on the second layer stepped locations of framework reverse side, and the back of the body layer gold fusing on chip and crystal oscillator surface, with frame
Frame ledge surface merges, and forms Ohmic contact；
F, one end of copper welding lead is welded on the welding zone of chip, the other end be welded on as required on pin or
The welding zone of person's crystal oscillator, is welded on the welding zone of crystal oscillator by one end of copper welding lead, and the other end is welded on framework, forms weldering
Silk；
G, the frame entirety that the strip after welding framed up are put in casting mold, make the part of framework, chip, crystal oscillator, welding wire
One end of welding with welding wire of whole and pin be positioned at cast chamber, then by by silica, epoxy resin, silicon powder component
Encapsulating material injects in cast chamber after melting at 178 DEG C, and pouring pressure is 2.8 3.2T, moulds after it cools and solidifies again
Envelope body cutting, is divided into the most independent product, and the packed part of framework is advisable with more bigger than crystal oscillator area.
As seen in figures 3-6, this ultra-thin plastic packaging semiconductor components and devices is high-precision programmable quartz clock module, framework 1
Base thickness is 0.3mm, and framework 1 is carried out multilayer corrosion, makes framework 1 front form a ground floor that centre is low, surrounding is high
Step 21, the thickness of ground floor step is 0.1mm, and a programmable chip 31, framework 1 are placed in ground floor step center
Reverse side forms a second layer step 22 that centre is low, surrounding is high, and the thickness of second layer step is 0.2mm, in second layer step
A crystal oscillator 32 is placed in heart position, chip 31 has 6 welding zones, is connected with 6 root wires 4, wherein the other end weldering of two root wires 4
Receiving on crystal oscillator 32, another 4 root beads are received on pin 5, and wherein pin is that framework is formed after hollow out, the part of framework,
The part of the whole and pin of whole, the welding wire of chip and crystal oscillator is packaged formation plastic-sealed body.The simple stone using crystal oscillator
English clock module frequency of oscillation due to crystal oscillator at different temperatures in the environment of difference variation is big is different, when causing it to walk not
Accurate.Programmable chip and crystal oscillator are integrally formed high-precision programmable quartz clock module, it is possible to achieve the reality of clock module
Time accurate oscillation functions, variation of ambient temperature can be prevented effectively from and the impact of frequency of oscillation that causes, and its size and tradition
Quartz clock module suitable.And if crystal oscillator and programmable IC are set on traditional quartz clock module frame simultaneously,
Then its volume is too big, is not suitable for the requirement of a lot of electronic product.
Claims (6)
1. a ultra-thin plastic packaging semiconductor components and devices, including:
One ultra-thin plastic packaging semiconductor components and devices framework, assembles for more than one chip, by machinery mould on described framework
The method of pressure or corrosion formed more than one layer for accommodating the step of chip, framework the thickness of stepped locations be less than framework other
The thickness of position, the thickness of same stepped locations is identical, and the thickness of different stepped locations can differ, material used by described framework
Material is copper alloy；
More than one chip, is bonded in the stepped locations of ultra-thin plastic packaging semiconductor components and devices framework；
Multiple welding wires and pin, welding wire one end is connected on chip, and the other end is connected with pin；
Plastic-sealed body, whole, the welding wire of all or part of, the chip of ultra-thin plastic packaging semiconductor components and devices framework whole and pin
It is partially encapsulated in plastic-sealed body；
It is characterized in that: within described framework is positioned at plastic-sealed body, the part that will not be covered by chip be provided with multiple through hole, described logical
Bore dia is less than 0.1mm.
Ultra-thin plastic packaging semiconductor components and devices the most according to claim 1, it is characterised in that: framework is with plastic-sealed body thickness on it
One side is front, and another side is reverse side, and described through hole is positioned at one end diameter in framework front less than the one end being positioned at framework reverse side
Diameter.
Ultra-thin plastic packaging semiconductor components and devices the most according to claim 1, it is characterised in that: described pin be positioned at plastic-sealed body with
Interior part is provided with multiple through hole, and described through-hole diameter is less than 0.1mm.
4. the preparation method of the ultra-thin plastic packaging semiconductor components and devices described in claim 2, its step includes:
A, the copper alloy sheet material of suitable thickness is cut into frame shape, cleaning frame member surface；
B, need not be formed on the surface of position of step uniformly one layer of anti-corrosion liquid of coating at framework, immerse in corrosive liquid by framework
Row corrosion, erodes to take out during predetermined thickness, forms ground floor step, and wherein the formula of corrosive liquid is: add mass fraction in water
It is the FeCl of 10～15%3, 3～the CuCl of 5%2With 2～the HCl of 4%；
C, repetition step b form the second layer or more layers step；
D, with temperature 50～60 DEG C, mass fraction is that the NaOH solution spray framework surface of 4-8% is to remove the anti-of surface coating
Erosion liquid, spray pressure is 2～3kg/cm2, then with the Water spray framework surface of 30～40 DEG C；
E, at temperature 350-400 DEG C, chip is placed on the stepped locations of framework, the fusing of the back of the body layer gold of chip surface, with frame
Frame ledge surface merges, and forms Ohmic contact；
F, one end of copper welding lead being welded on the welding zone of chip, the other end is welded on pin, forms chip and pin
Between welding wire；
G, will welding after framework entirety put in casting mold, make framework, chip, the whole and pin of welding wire weld with welding wire
One end be positioned at cast chamber, then by by silica, epoxy resin, silicon powder component encapsulating material heating and melting after inject
In cast chamber, take out after it cools and solidifies.
The preparation method of ultra-thin plastic packaging semiconductor components and devices the most according to claim 4, it is characterised in that: step c completes
After, by framework is overall and pin all coats one layer of anti-corrosion liquid, position and the pin that will not be covered by chip at framework will
Anti-corrosion liquid is melted the pore one by one by packed one end, and pore is at the position one_to_one corresponding of framework positive and negative, its center
The pore diameter that the pore diameter of frame reverse side position is corresponding more than framework front position, then immerses framework in corrosive liquid and carries out
Corrosion, erodes to take out after through hole is formed, then carries out step d.
The preparation method of ultra-thin plastic packaging semiconductor components and devices the most according to claim 4, it is characterised in that: step c completes
After, one end mould punching to be packaged is gone out multiple through hole, punching press by position and the pin that will not be covered by chip by framework
The through hole the gone out diameter in side, framework front is less than the diameter at framework reverse side.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101060153A (en) * | 2007-05-15 | 2007-10-24 | 佛山市国星光电科技有限公司 | A side LED and its manufacture process |
| CN101859713A (en) * | 2009-04-10 | 2010-10-13 | 日月光半导体制造股份有限公司 | Advanced quad flat non-leaded package and manufacture method thereof |
| CN102629599A (en) * | 2012-04-06 | 2012-08-08 | 天水华天科技股份有限公司 | Quad flat no lead package and production method thereof |
| CN103021996A (en) * | 2012-12-28 | 2013-04-03 | 华天科技（西安）有限公司 | Flat multichip packaging piece with stamping frame with square groove and production method of flat multichip packaging piece |
-
2014
- 2014-06-11 CN CN201410256976.5A patent/CN103985677B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101060153A (en) * | 2007-05-15 | 2007-10-24 | 佛山市国星光电科技有限公司 | A side LED and its manufacture process |
| CN101859713A (en) * | 2009-04-10 | 2010-10-13 | 日月光半导体制造股份有限公司 | Advanced quad flat non-leaded package and manufacture method thereof |
| CN102629599A (en) * | 2012-04-06 | 2012-08-08 | 天水华天科技股份有限公司 | Quad flat no lead package and production method thereof |
| CN103021996A (en) * | 2012-12-28 | 2013-04-03 | 华天科技（西安）有限公司 | Flat multichip packaging piece with stamping frame with square groove and production method of flat multichip packaging piece |
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