CN1808729A - LED lead frame manufacturing method and its construction - Google Patents
LED lead frame manufacturing method and its construction Download PDFInfo
- Publication number
- CN1808729A CN1808729A CNA2005100025832A CN200510002583A CN1808729A CN 1808729 A CN1808729 A CN 1808729A CN A2005100025832 A CNA2005100025832 A CN A2005100025832A CN 200510002583 A CN200510002583 A CN 200510002583A CN 1808729 A CN1808729 A CN 1808729A
- Authority
- CN
- China
- Prior art keywords
- insulation material
- plastic cement
- lead frame
- cement insulation
- radiating seat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Led Device Packages (AREA)
Abstract
This invention relates to diode lead rack process method and its structure, which is one design relative to the diode and the diode lead rack and Mainly exerts impacting onto the baseboard materials with different thickness to form electrode leg, fixing leg and dissipation socket lead wire area, wherein, the dissipation socket is composed of baseboard materials and then impacting the leg for bending and finally sending plastic glue isolation materials in the lead wire area to make the baseboard form multiple lag wire rack; the thick dissipation board can form conductive socket in the product of the back transistor and line.
Description
Technical field
The present invention relates to light-emitting diode, is a kind of design relevant with light-emitting diode, is meant that especially one has the LED lead frame of heat-conducting base.
Background technology
Press, general surface adhesion type light-emitting diode mainly is to penetrate bowl-shape base material is arranged on a lead frame, and lead frame is provided with semiconductor chip (industry is called solid crystalline substance), make semiconductor chip utilize lead and pin conducting (industry is called routing) simultaneously, utilize epoxy resin that semiconductor chip and circuit are packaged in (industry is called encapsulation) on the lead frame at last again, and then when surface adhesion type light-emitting diode behind turning circuit, can drive semiconductor chip and make it luminous.
Yet existing on the market at present surface adhesion type light-emitting diode is for asking luminous efficiency, therefore in light-emitting diode, be installed with a plurality of semiconductor chips, after light-emitting diode is importing electric current, luminous to drive each semiconductor chip, and then reach the luminous effect of reinforcement.Thus, when all semiconductor chips operate at the same time, will produce great heat energy, so the heat radiation of light-emitting diode is very important, otherwise causes burning of semiconductor chip easily.
As shown in Figure 1, it is the lead frame structure of a light-emitting diode that sells on the market at present, this lead frame (30) is gone up to penetrate bowl-shape base material (80), simultaneously on lead frame (30) and bowl-shape base material (80), be preset with a corresponding perforation respectively, be embedded in this perforation for a conducting strip (90), and this conducting strip (90) is provided with a nose bar (91) that protrudes, the section of nose bar (91) is smaller than the section of conducting strip (90), nationality is embedded in the perforation to utilize nose bar (91), and make conducting strip (90) place the bottom of bowl-shape base material (80), semiconductor chip is placed the end face of nose bar, and carry out routing with lead frame (30), the action of encapsulation, and then after light-emitting diode imports electric current, can drive semiconductor chip, and the heat energy that is produced when making semiconductor chips drive is able to conduct on conducting strip (90) by nose bar (91), utilizes conducting strip (90) and other fin to carry out heat exchange simultaneously, to reach the purpose of heat radiation.
What deserves to be mentioned is, because this conducting strip (90) and lead frame (30) are separate independent manufacturing, so not only quite time-consuming on the processing procedure.Cost in the relative also raising manufacturing must be organized after conducting strip (90) and lead frame (30) are formed separately simultaneously again and be established, and becomes one in dealer's manufacturing undoubtedly and perplexs greatly.
Summary of the invention
Therefore, the inventor is in view of the variety of problems of above-mentioned LED lead frame.So plentiful and substantial experiences such as the long-pending research of being engaged in this product for many years, design, manufacturing actively drop into a large amount of painstaking effort and energy and are ground wound, successfully develop the present invention finally, i.e. the manufacture method of LED lead frame and structure thereof.
The manufacture method of LED lead frame of the present invention and structure thereof mainly are to have on the baseplate material of different thickness one to bestow punching press, to be formed with the lead-in wire block of polarity pin, fixing feet and radiating seat on substrate.This radiating seat is made of material thicker on the substrate simultaneously, then again its polarity pin is imposed pressing and bending, jetting plastic insulation material on the lead-in wire block more at last, and then on substrate, constitute a plurality of lead frames.
The objective of the invention is to, has the different substrate of thickness by one, make it on substrate, impose stamping press, make punching press on the substrate be formed with the lead-in wire block of polarity pin, fixing feet and radiating seat, and this radiating seat is positioned at position thicker on the substrate just, carries out the operation of solid crystalline substance and follow-up routing, encapsulation for semiconductor chip, when light-emitting diode operates, the heat energy that produces in the time of can be by radiating seat conductive semiconductor chip light emitting, and then reach the effect of heat radiation.
Another object of the present invention is to, the radiating seat with heat-conducting effect is to finish when substrate stamps out polarity pin and fixing feet, need not conducting strip be installed in addition on the processing procedure, has the effect of simplifying production procedure and reducing manufacturing cost.
Description of drawings
Fig. 1 is the schematic diagram of a known luminescence diode lead frame;
Fig. 2 is a making flow chart of the present invention;
Fig. 3 is the schematic diagram of substrate of the present invention;
Fig. 4 is the schematic diagram after the substrate punching press of the present invention;
Fig. 5 is the go between schematic diagram of block of the present invention;
Fig. 6 is go between a schematic diagram behind the block jetting plastic insulation material of the present invention;
Fig. 7 is the schematic diagram after lead frame of the present invention is shaped;
Fig. 8 is the generalized section of lead frame of the present invention;
Fig. 9 is a generalized section of utilizing the light-emitting diode that the present invention constitutes;
Figure 10 is the present invention block Another Application embodiment that goes between;
Figure 11 is plastic cement insulation material Another Application embodiment of the present invention.
The main element symbol description:
10 substrates, 11 raised lines
12 lead-in wire blocks, 13 polarity pin
14 fixing feet, 15 radiating seats
16 runners, 17 junctions
20 plastic cement insulation material, 21 inner edges
30 lead frames, 40 semiconductor chips
50 leads, 60 epoxy resin
70 lens, 80 bowl-shape base materials
90 conducting strips, 91 nose bars
Embodiment
For making the convenient effect of understanding content of the present invention and reaching of auditor, below will cooperate graphic detailed description:
In the manufacture method of LED lead frame of the present invention and the structure thereof, manufacture method comprises the following step as shown in Figure 2:
1, make the different substrate (10) of thickness: this substrate (10) is generally to be tabular as shown in Figure 3, convexes with many raised lines that thickness is thicker on its at least one end face.
2, punching press lead-in wire block (12): be on substrate (10), to bestow punching press, please consult shown in Figure 4ly simultaneously, make to be formed with a plurality of lead-in wire blocks (12) on the substrate (10) with polarity pin (13), fixing feet (14) and radiating seat (15); Wherein radiating seat (15) is formed by the thicker raised line of thickness (11), and polarity pin (13) then bends in punching press.
3, jetting plastic insulation material (20): be to utilize the injection molding technology, make to be formed with plastic cement insulation material (20) on the lead-in wire block (12), as shown in Figure 6 at lead-in wire block (12).This plastic cement insulation material (20) is the outside that is coated on polarity pin (13), fixing feet (14) and radiating seat (15), and separated, make polarity pin (13) be convexly set in the outside of plastic cement insulation material (20) simultaneously, use the lead frame (30) that constitutes a light-emitting diode.
Please consult Fig. 4 and shown in Figure 5 simultaneously, carry out on the substrate (10) of different thickness in the lead-in wire block (12) after the punching press, substrate (10) thin location forms a plurality of have polarity pin (13), fixing feet (14), thicker part then forms radiating seat (15), wherein fixing feet (14) is in order to link radiating seat (15) and substrate (10), and be formed with runner (16) between polarity pin (13) and radiating seat (15), and this radiating seat (15) is to go up the thicker raised line of thickness by substrate (10) to be constituted.
Thereby, when carrying out the ejaculation of plastic cement insulation material (20) on lead-in wire block (12), please to consult shown in Figure 6ly simultaneously, this plastic cement insulation material (20) is the outside that is coated on polarity pin (13), fixing feet (14) and radiating seat (15).Simultaneously the runner (16) between polarity pin (13) and radiating seat (15) is filled up, and make the outside of the protruding dew plastic cement of polarity pin (13) insulation material (20), can form LED lead frame.
As Fig. 7, shown in Figure 8, in the structure of aforementioned LED lead frame, this lead frame (30) mainly is to go up to penetrate in substrate (10) to have plastic cement insulation material (20) back to constitute, wherein this plastic cement insulation material (20) inside is provided with a radiating seat (15), this radiating seat (15) end face and bottom surface are convexly set in the two ends of plastic cement insulation material (20) respectively, and this plastic cement insulation material (20) outwards convexes with polarity pin (13), this polarity pin (13) is to be stretched out by plastic cement insulation material (20) inside to form, and, be subjected to plastic cement insulation material (20) between this junction (17) and radiating seat (15) and separate in the inner formation of plastic cement insulation material (20) junction (17).
As shown in Figure 9, this LED lead frame is offered manufacturer, go up polarity pin (13) in substrate (10) through manufacturer, after fixing feet (14) is cut off and is separated, set firmly several semiconductor chip (40) (promptly solid brilliant) in the upper end of radiating seat (15), utilize lead (50) to connect semiconductor chip (40) and junction (17) (being routing) simultaneously, utilize epoxy resin (60) to be packaged on the plastic cement insulation material (20) again, make semiconductor chip (40) and lead (50) be coated on epoxy resin (60) inside, simultaneously can be further in epoxy resin (60) outside, be provided with lens (70), can constitute a finished product of LED.
After the light-emitting diode turn-on power is luminous with driving semiconductor chip (40), in the time of can semiconductor chip (40) being driven by radiating seat (15) the heat energy that produces conduct to the lower surface by the upper surface of radiating seat (15), and carry out heat exchange by lower surface and other heat dissipation elements, reach the purpose of heat radiation.
What deserves to be mentioned is that the radiating seat in the case of the present invention (15) is integrated by institute on the substrate (10), the time on therefore not only significantly reduction is made, can significantly reduce the cost of manufacturing simultaneously, and can keep good heat-conducting effect.
In addition, see also shown in Figure 10ly, wherein this substrate (10) further can all convex with raised line in both ends of the surface, and then increases the thickness of radiating seat (15), also can reach identical purpose, cooperates the demand of different light-emitting diodes simultaneously.In addition, see also shown in Figure 11, wherein this plastic cement insulation material (20) further can constitute a bowl-shape configuration in radiating seat (15) upper end, and the inner edge of this bowl-shape configuration has an appropriate tilt angle, and then can adjust the angle that the luminous back of semiconductor chip is throwed by this angle of inclination, the visual purposes in this angle of inclination is different and adjust to some extent simultaneously.
The above is decided by convenient description technology contents of the present invention, is not the interest field in order to restriction this case.All equivalence elements of being done according to the invention spirit of this case are changed, are substituted, and all should be encompassed in the protection range of this case.
Claims (8)
1, a kind of manufacture method of LED lead frame is characterized in that comprising the following step:
The substrate of a, the different thickness of making convexes with many raised lines that thickness is thicker on this substrate end-face;
B, punching press lead-in wire block are to bestow punching press on substrate, make to be formed with a plurality of lead-in wire blocks with polarity pin, fixing feet and radiating seat on the substrate, and wherein radiating seat is formed by the thicker raised line of thickness, simultaneously the polarity pin is bent;
C, jetting plastic insulation material, be to utilize the injection molding technology at the lead-in wire block, make and be formed with plastic cement insulation material on the lead-in wire block, and this plastic cement insulation material is the outside that is coated on polarity pin, fixing feet and radiating seat, and separated, make the polarity pin be convexly set in the outside of plastic cement insulation material simultaneously, nationality is to constitute the lead frame of a light-emitting diode.
2, the manufacture method of LED lead frame as claimed in claim 1, it is characterized in that, after wherein lead frame constitutes, the radiating seat upper end sets firmly semiconductor chip, utilize lead to connect semiconductor chip and junction simultaneously, utilize epoxy encapsulation again on plastic cement insulation material, make semiconductor chip and lead be coated on epoxy resin inside, to constitute a light-emitting diode.
3, the manufacture method of LED lead frame as claimed in claim 2 is characterized in that, wherein the epoxy resin outside further can be provided with lens.
4, the manufacture method of LED lead frame as claimed in claim 1 is characterized in that, wherein the inner edge of plastic cement insulation material has an appropriate tilt angle.
5, a kind of structure of LED lead frame, it is characterized in that, mainly be after ejaculation on the substrate has ring-type plastic cement insulation material, to constitute, wherein this plastic cement insulation material inner edge is provided with a radiating seat, this radiating seat end face and bottom surface are exposed to the upper and lower end of plastic cement insulation material inner edge, and this plastic cement insulation material outwards convexes with the polarity pin, this polarity pin is to be stretched out by plastic cement insulation material inside portion to form, and constitute junction, and be subjected to plastic cement insulation material between junction and radiating seat and separate in plastic cement insulation material is inner.
6, the structure of LED lead frame as claimed in claim 5 is characterized in that, wherein the inner edge of plastic cement insulation material has an appropriate tilt angle.
7, the structure of LED lead frame as claimed in claim 5 is characterized in that, wherein substrate further can all convex with raised line in both ends of the surface, and then increases the thickness of radiating seat.
8, the structure of LED lead frame as claimed in claim 5 is characterized in that, wherein the radiating seat end face can be solid brilliant for semiconductor chip, and the bottom surface is arranged on the heat dissipation element after constituting light-emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100025832A CN1808729A (en) | 2005-01-21 | 2005-01-21 | LED lead frame manufacturing method and its construction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100025832A CN1808729A (en) | 2005-01-21 | 2005-01-21 | LED lead frame manufacturing method and its construction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1808729A true CN1808729A (en) | 2006-07-26 |
Family
ID=36840521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100025832A Pending CN1808729A (en) | 2005-01-21 | 2005-01-21 | LED lead frame manufacturing method and its construction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1808729A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100448331C (en) * | 2007-04-30 | 2008-12-31 | 林万炯 | Flexible bar type waterproof LED lamp forming process |
| WO2010020105A1 (en) * | 2008-08-22 | 2010-02-25 | Lou Mane | Led driven by ac power directly |
| CN101393948B (en) * | 2007-09-18 | 2010-06-02 | 宏齐科技股份有限公司 | Front-back enclosing type LED encapsulation construction and encapsulation method |
| CN102637680A (en) * | 2012-03-27 | 2012-08-15 | 王知康 | LED (Light Emitting Diode) circuit structure and manufacturing method thereof |
| CN102646777A (en) * | 2011-02-16 | 2012-08-22 | 三星Led株式会社 | Light emitting device package and method of fabricating same |
-
2005
- 2005-01-21 CN CNA2005100025832A patent/CN1808729A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100448331C (en) * | 2007-04-30 | 2008-12-31 | 林万炯 | Flexible bar type waterproof LED lamp forming process |
| CN101393948B (en) * | 2007-09-18 | 2010-06-02 | 宏齐科技股份有限公司 | Front-back enclosing type LED encapsulation construction and encapsulation method |
| WO2010020105A1 (en) * | 2008-08-22 | 2010-02-25 | Lou Mane | Led driven by ac power directly |
| CN102646777A (en) * | 2011-02-16 | 2012-08-22 | 三星Led株式会社 | Light emitting device package and method of fabricating same |
| CN102637680A (en) * | 2012-03-27 | 2012-08-15 | 王知康 | LED (Light Emitting Diode) circuit structure and manufacturing method thereof |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |