CN105720146B - A kind of broad-area electrode LED array preparation method - Google Patents
A kind of broad-area electrode LED array preparation method Download PDFInfo
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- CN105720146B CN105720146B CN201610223901.6A CN201610223901A CN105720146B CN 105720146 B CN105720146 B CN 105720146B CN 201610223901 A CN201610223901 A CN 201610223901A CN 105720146 B CN105720146 B CN 105720146B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
The present invention discloses a kind of large area LED array preparation method, including：The LED wafer array being attached on blue film or UV films is after repeatedly expanding crystalline substance and reaching necessary requirement interval, directly disposably electrode connection is carried out with corresponding design substrate, the LED array of entire arrangement on substrate is driven by peripheral circuit again, realizes the preparation of large area LED array.Wherein, LED device structure includes single electrode and bipolar electrode structure, and according to the difference of LED device structure, corresponding design substrate and connection type are also different.The LED array preparation method for the wafer level that the present invention is implemented greatly enhances the display resolution of LED array, increases the production chains in each application, is well positioned to meet display demand.Although single led array cost of manufacture may be higher, volume production once being realized, the encapsulation step of single led unit being eliminated while volume production, cost will substantially reduce.
Description
Technical field
The present invention relates to LED array display preparation fields, more particularly, to a kind of broad-area electrode LED array system
Preparation Method.
Background technology
LED display curtain, as new media, the luminous picture and text of movement, it is easier to attracting attention, information content
Greatly, it updates at any time, there is extraordinary advertisement and bulletin effect.LED screen is more simpler than neon light, is easy installation and uses,
Effect variation is more, can more new content at any time, be good indoor outgoing visual media.LED screen belongs to high-tech electronic
Product, price is relatively high, concentrates in government and unit using in the past.Technology is constantly progressive, and price constantly reduces, and is assembled and is tieed up
It protects simpler.Small-sized LED strip screen is installed because cheap and using simply, is slowly accepted by the public, gradually comes into
Size shop, application is more popular, gradually starts to popularize.
LED display curtain, basic Component units include mainly following：Display unit plate, power supply, control card, control
Unit.And display unit plate is mainly made of LED array, LED array is by many LED luminous points resins or plastic seal
It loads.(indoor and outdoor) different, the luminous intensity and phase of each of which LED luminous points according to LED display working environment
Adjacent two intervals LED are also different.
The making and production of traditional LED array be the LED unit module got well using a certain amount of individual packages or
The module that overall package has been got well is spliced.The LED unit packaged type of individual packages includes pinned encapsulation, plane formula envelope
Dress, surface mount packages, Piranha encapsulation, power-type encapsulation etc..Although these encapsulation can make single led working method and environment can be with
When flexibly selecting, but composition LED display is arranged in a matrix in the LED of a certain amount of individual packages, due to individual packages
Each LED unit has certain volume, causes the interval of two adjacent LEDs that can not minimize so that the resolution of LED display
Rate can not further increase, and then display effect is caused to be deteriorated.Although taking the LED array that whole plastic packaging mode encapsulates can be one
Determine to reduce two adjacent LEDs intervals in degree, improves the resolution ratio and display effect of LED display, but usually whole plastic packaging
The interval of LED array be fixed, be to be determined by plastic package die.Meanwhile producing LED array using both the above method
Production process is to be placed on LED unit in the pixel of corresponding LED array one by one, is manufacturing and producing big screen LED array
In display, production efficiency just seems more low.
Invention content
To overcome two kinds of conventional method flexibilities of the above-mentioned LED array display of production in the prior art low, production efficiency
Relatively low, the relatively low disadvantage of display resolution, the present invention proposes a kind of broad-area electrode LED array preparation method.
In order to solve the above technical problems, technical scheme is as follows：
A kind of broad-area electrode LED array preparation method, including large area single electrode LED preparation methods and the double electricity of large area
Pole LED preparation methods, including：
The LED wafer array being attached on blue film or UV films is after repeatedly expanding crystalline substance and reaching necessary requirement interval, directly
Electrode connection is disposably carried out with corresponding design substrate, then drives the LED of entire arrangement on substrate brilliant by peripheral circuit
Circular array realizes the preparation of large area LED array.Wherein, LED device structure includes single electrode and bipolar electrode structure, according to LED
The difference of device architecture, corresponding design substrate and connection type are also different.
Said program be specially：
Large area single electrode LED preparation methods, process are：To the LED wafer array being attached on blue film or UV films
Repeatedly expand after crystalline substance reaches necessary requirement interval, based on the substrate of user's design, on corresponding welding disking area point elargol or
Scolding tin is sprayed, the welding disking area on the bottom electrode and substrate of each LED wafer of LED wafer array of the expansion after brilliant is subjected to school
Quasi- directly presses LED wafer array and substrate after calibration, then by after pressing LED wafer array and substrate be placed in insulating box
In so that elargol or scolding tin is cured, blue film or UV films are removed after solidification, then the LED on the pad and substrate on conductive film is brilliant
Circular array is calibrated, and is directly pressed after calibration；
Large area bipolar electrode LED preparation methods, process are：To the LED wafer array being attached on blue film or UV films
After the multiple expansion crystalline substance of progress reaches necessary requirement interval, based on the substrate of user's design, by each of the LED wafer array after expansion crystalline substance
Welding disking area on the bottom electrode and substrate of LED wafer is calibrated, directly by LED wafer array and substrate pressure after calibration
Close, then by after pressing LED wafer array and substrate be placed in insulating box elargol or scolding tin made to cure, blue film is removed after solidification
Or UV films.
Preferably, the material of the substrate and conductive film is silicon chip or pcb board.
Preferably, when preparing large area single electrode LED array, the welding disking area of substrate is etched with several at equal intervals
Row metal wire, row metal line at equal intervals identical with row metal wire quantity, row metal line and row gold are etched on conductive film
It is vertical to belong to line；Several equally spaced windowed regions are offered on each metal wire, windowed regions point has elargol or is sprayed with scolding tin；
The interval of adjacent column metal wire is equal with the interval of adjacent rows metal wire.
Preferably, when preparing large area bipolar electrode LED array, the welding disking area of substrate is etched with vertical row metal
Line and row metal wire, row metal line and row metal wire cross section are isolated by isolated film, and row metal line and row metal wire
Quantity is equal, and the interval of adjacent column metal wire is equal with the interval of adjacent rows metal wire, several etc. are offered on each metal wire
The windowed regions at interval, windowed regions point have elargol or are sprayed with scolding tin.
Preferably, the line width of the metal wire, the interval of adjacent wires, the interval of windowed regions and area are sized to
Accordingly changed according to the space requirement of the size of required LED wafer volume and array.
Preferably, the material of the row metal wire and row metal line be conductor material, the conductor material can be aluminium, copper or
Other conductor materials of person.
LED wafer power in above-mentioned LED wafer array used, emission wavelength, volume are not limited.I.e. LED wafer can
Can also be black light LED to be visible LED.
Compared with prior art, the advantageous effect of technical solution of the present invention is：A kind of broad-area electrode LED gusts of the present invention
Row preparation method, technical field are FPD and LED array display preparation field, and problem to be solved is to overcome
The resolution ratio of traditional LED array display screen is relatively low, and heat dissipation performance is poor, and prepares and the relatively low disadvantage of production efficiency.
The present invention takes the preparation method of LED wafer grade array, and use simultaneously extends expansion crystal technique-and repeatedly expands crystal technique, and
And it is different according to LED device structure distribution of electrodes, it designs and implements a kind of for single electrode LED wafer connection bottom electrode
Substrate and it is a kind of connection top electrodes conductive film, for bipolar electrode LED wafer its distribution of electrodes face connect positive electrode
With the substrate of negative electrode.The embodiment efficiently produces LED array, can be according to different application demand flexible designs.
The large area LED array preparation method implemented using the present invention, can improve the production efficiency of LED array, due to
It uses and the substrate and conductive film of single electrode is connect two electrodes of each LED unit of single electrode LED array
It touches, contact, thermal diffusivity is attached by two electrodes for being distributed in the same side of bipolar electrode LED array for the substrate of bipolar electrode
It can be greatly improved, moreover, the LED array preparation method for the wafer level that the present invention is implemented, is largely improved
The display resolution of LED array increases the production chains in each application, is well positioned to meet display demand.Although single
A LED array cost of manufacture may be higher, but once realizes volume production, and the envelope of single led unit is eliminated while volume production
Step is filled, cost will substantially reduce.
Description of the drawings
Fig. 1 is the schematic diagram of typical single electrode and bipolar electrode LED wafer.
Fig. 2 is to expand brilliant schematic diagram.
Fig. 3 is the side view of single single electrode LED wafer and substrate electrical connection.
Fig. 4 is the side view of single bipolar electrode LED wafer and substrate electrical connection.
Fig. 5 is the preparation method flow chart of the present invention.
Specific implementation mode
The attached figures are only used for illustrative purposes and cannot be understood as limitating the patent；It is attached in order to more preferably illustrate the present embodiment
Scheme certain components to have omission, zoom in or out, does not represent the size of actual product；
To those skilled in the art, it is to be appreciated that certain known features and its explanation, which may be omitted, in attached drawing
's.The following further describes the technical solution of the present invention with reference to the accompanying drawings and examples.
A kind of large area single electrode LED array preparation method, is embodied content and method is as follows：
Typical LED wafer structure includes stagged electrode structure and bipolar electrode structure, Fig. 1 be typical single electrode LED wafer and
The structural schematic diagram of bipolar electrode LED wafer, for single electrode, such as Fig. 1（a）, P electrode is located at the top of wafer, N electrode layer position
In the bottom of wafer, also can N electrode be located at the top of wafer, P electrode layer is located at the lower section of wafer；For bipolar electrode, such as Fig. 1
（b）, P electrode and N electrode are located at the side of LED wafer.According to the characteristic of LED, apply a conducting voltage between PN electrodes
When with conducting electric current, which can work normally (luminous).The conducting voltage and the size of electric current are by the LED wafer
Material constitute and determine, the power for the LED wafer that different materials are constituted, luminous intensity generally also differs.
LED array used by the present embodiment is to be attached to blue film or UV films by what the company of production LED wafer provided
On LED wafer array.Due to LED wafer company provide to be adhered to LED wafer array spacings smaller, in order to make LED array
It subsequently can preferably combined with the electrode contact point on substrate with substrate and conductive film pressing step, so wanting root
The brilliant processing of expansion is done according to the position of substrate top electrode contact point and the gap size of adjacent electrode contact point.Due to general LED indigo plants film
Or the ductility of UV films is limited, causes the LED wafer array single being adhered on blue film or UV films to expand brilliant closely spaced.In order to
Enable the LED wafer electrode contact point perfect adaptation corresponding on substrate of LED wafer array, it can be to being attached to blue film or UV
LED wafer array on film, which is done, repeatedly expands the brilliant processing of brilliant --- turning over film --- expansion, until expanding the LED wafer array arrangement that crystalline substance obtains
Specification (position, interval) can be suitable with the position of the electrode contact point on substrate and interval, and it is as shown in Figure 2 to expand brilliant schematic diagram.
The company of the single led pixel and substrate and conductive film of a kind of large area single electrode LED array that the present invention is implemented
Schematic diagram is connect as shown in figure 3, after repeatedly expanding brilliant processing, artificially control by blue film or UV films and single electrode LED wafer
The electrode surface of array bonds, and the single electrode LED wafer array bottom on blue film or this UV film and lining will be directly attached to facilitate
Bear building-up closes.Substrate surface be covered with corresponding connecting wire and with expand it is brilliant after array homalographic at equal intervals contact pad, so as to
Spray tin or dispensing are carried out to the pad on substrate（Conductive silver glue）, then under certain circumstances, by single electrode LED wafer array electricity
Pad pressing on extremely direct aligning substrate.To realize large area single electrode LED array each LED pixel bottom electrode
With the connection of pad on substrate.After pressing solidification, the blue film or UV films bonded by ultraviolet irradiation and LED array upper electrode,
After blue film or UV films fall off, the conductive film of respective design is connected by scolding tin under certain condition or directly pressing connects
It connects, realizes the connection of conductive film and the top electrode of each LED pixel of LED wafer array.In this way, large area LED wafer array
Display system foundation finishes, as long as each output driving mouth of external drive circuit is next separately connected substrate and conductive film
On plain conductor, so that it may to realize the display function of entire LED wafer.Relative to traditional LED array display, the implementation
Heat dissipation performance greatly improves when the LED component work of scheme, moreover, the gap size of LED array can be in expanding brilliant process flexibly
Adjustment, the design of substrate and conductive film can also artificial adjusted design, the design requirement of people can be better met.
Fig. 4 show the side view of a bipolar electrode LED wafer and substrate electrical connection, artificial to control in expanding brilliant processing
System by blue film or the bottom adhe of UV films and bipolar electrode LED wafer array so that the bipolar electrode of LED is downward, realize and
The combination of substrate.Likewise, pad corresponding with bipolar electrode LED array is paved with or etched above substrate, and sprayed on pad
The LED wafer array being attached on blue film or UV films is directly directed at combination with substrate by tin or dispensing under certain conditions,
After solidification, then with ultraviolet irradiation blue film or UV films are fallen off removal.Thus make LED wafer array be transferred on substrate and with
Substrate is combined, so that external electrical is driven.
The series of steps flow chart that the present invention is implemented is as shown in Figure 5.First, LED wafer manufacturer is provided attached
The LED wafer array on blue film or UV films after repeatedly expanding crystalline substance and reaching necessary requirement interval, for LED gusts of single electrode
Row elargol or spray scolding tin on the welding disking area point in corresponding design substrate, under certain conditions, will expand it is brilliant after
After the welding disking area calibration after dispensing or spray tin on the bottom electrode and substrate of each LED wafer of LED wafer array, directly
Connect by LED wafer array and substrate pressing, then by after pressing LED wafer array and substrate be placed in insulating box make elargol or
Scolding tin cures, and removes blue film or UV films after solidification, then by the LED wafer array school on the welding disking area and substrate on conductive film
Quasi- directly presses under certain conditions after calibration.
For bipolar electrode array, on the electrode and substrate of each LED wafer of the LED wafer array directly by expansion after brilliant
It is combined after welding disking area calibration, then removes blue film or UV films.In this way, will just be adhered to the LED on blue film or UV films originally
Direct large area is transferred to corresponding substrate and is attached with substrate or conductive film behind wafer array expansion gap, and can pass through
External scan driving circuit implements array to the present invention and is scanned driving, realizes the preparation of large area LED array.
The characteristics of LED wafer the same face being distributed according to the anodic-cathodic of bipolar electrode LED wafer epitaxial structure, with large area
The substrate that LED array is electrically connected.It is coated with the metal foil of corresponding LED wafer anodic-cathodic contact on the surface of substrate
Film, and solder is plated in each LED anodic-cathodic contact point of substrate surface, then under certain circumstances, will expand before brilliant
LED array afterwards directly disposably precisely aligns the welding region on corresponding substrate, and the LED array to realize large area is straight
Connect the purpose physically and electrically being connect with extraneous substrate.When expanding brilliant step, the bipolar electrode LED that will be attached on blue film is needed
One side of the wafer comprising electrode upward, can realize the metal welding on the electrode and substrate of each wafer of LED array in this way
Disk accurately combines, and LED wafer electrode combined with the metal pad on substrate after can will shine it is face-up.For bipolar electrode
LED device structure, there is that be divided into number be 1,2,3 on substrate ..., and 10 10 row metal lines and number are a, b, c ..., j's
Row metal wire, ten row metal lines and ten row metal wires are etched in the surface of substrate respectively, and row metal line and row metal wire are handed over
Fork point is isolated by silica membrane, so that ranks metal wire will not generate physics and electrical connection.The row gold at every
Belong to and do windowing processing on the region certain at equal intervals of line, that is, some equidistantly certain areas will be outputed on every ranks line
The contact area in domain, and certain thickness solder is plated in ranks metal wire cross section and alignment uplifting window region, so as to
Expand it is brilliant after LED array carry out corresponding electrode contact under certain conditions, to realize each unit of LED array with it is outer
The purpose that portion's circuit is physically and electrically connected facilitates external drive circuit to be scanned each LED of driving that is separately addressed mono-
Member work shines.
According to the distribution of electrodes of single electrode LED component in the top and bottom of LED component, the present invention designs and the company of proposing
Connect the conductive film of the substrate and connection top electrodes of the bottom electrode of large area LED array.Substrate material be silica or
Person FR4 material PCB, it is a, b, c ..., the row metal wire of j, in every row metal wire to etch 10 numbers on the surface of a substrate
On be provided with 10 windowed regions, 10 windowed regions are arranged at equal intervals.Windowed regions all can be in certain temperature environment
Under, scolding tin is sprayed with conductive silver glue on dispenser point, or with tin-spraying machine, will disposably to expand brilliant obtained LED battle arrays before
Row directly press on substrate, in pressing step, in LED array each LED unit will strictly on substrate at dispensing or
Spray Xi Chu is precisely aligned, and the interval of two LED of arbitrary neighborhood also will be with two windowing areas of arbitrary neighborhood on substrate in LED array
The interval in domain is consistent, the electrode that just can guarantee each LED unit in LED array in this way and the windowed regions on corresponding substrate
It is combined, to achieve the purpose that each column LED can physically and electrically be connect with the foundation of column metal wire on substrate, in turn
External circuit can drive the LED array that the present invention is implemented by rank scanning mode.The implemented LED array conductive thin of the present invention
Film is equipped with the equal numbers of row metal line of the specification and the above-listed metal wire of substrate of corresponding substrate, the LED battle arrays that the present invention is implemented
Row conductive film includes that number is 1,2,3...10 totally 10 lines, will be former after single electrode LED array and substrate pressing connection
It is removed to stick the blue film on LED array, under certain condition, which is directly directed to the top of pressing and LED array
Portion's electrode is combined, and LED array and substrate has been achieved, and conductive film integrates.The driving of external circuit is exported into difference
It is connected on the metal wire of substrate and conductive film, then the turntable driving to the integrated LED array may be implemented.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
All any modification, equivalent and improvement etc., should be included in the claims in the present invention made by within the spirit and principle of invention
Protection domain within.
Claims (6)
1. a kind of broad-area electrode LED array preparation method, which is characterized in that including large area single electrode LED array preparation side
Formula and large area bipolar electrode LED array preparation method, specially：
Large area single electrode LED array preparation method, process are：To the LED wafer array being attached on blue film or UV films
Repeatedly expand after crystalline substance reaches necessary requirement interval, based on the substrate of user's design, on corresponding welding disking area point elargol or
Scolding tin is sprayed, the welding disking area on the bottom electrode and substrate of each LED wafer of LED wafer array of the expansion after brilliant is subjected to school
Quasi- directly presses LED wafer array and substrate after calibration, then by after pressing LED wafer array and substrate be placed in insulating box
In so that elargol or scolding tin is cured, blue film or UV films are removed after solidification, then the LED on the pad and substrate on conductive film is brilliant
Circular array is calibrated, and is directly pressed after calibration；
Large area bipolar electrode LED array preparation method, process are：To the LED wafer array being attached on blue film or UV films
After the multiple expansion crystalline substance of progress reaches necessary requirement interval, based on the substrate of user's design, by each of the LED wafer array after expansion crystalline substance
Welding disking area on the bottom electrode and substrate of LED wafer is calibrated, directly by LED wafer array and substrate pressure after calibration
Close, then by after pressing LED wafer array and substrate be placed in insulating box elargol or scolding tin made to cure, blue film is removed after solidification
Or UV films.
2. broad-area electrode LED array preparation method according to claim 1, which is characterized in that the substrate and conduction
The material of film is silicon chip or pcb board.
3. broad-area electrode LED array preparation method according to claim 1, which is characterized in that preparing large area list
When electrode LED array, the welding disking area of substrate is etched with several equally spaced row metal wires, be etched on conductive film with
The identical row metal line at equal intervals of row metal wire quantity, row metal line are vertical with row metal wire；It is offered on each metal wire several
A equally spaced windowed regions, windowed regions point have elargol or are sprayed with scolding tin；The interval of adjacent column metal wire and adjacent rows gold
The interval for belonging to line is equal.
4. broad-area electrode LED array preparation method according to claim 1, which is characterized in that double preparing large area
When electrode LED array, the welding disking area of substrate is etched with vertical row metal line and row metal wire, row metal line and row metal
Line cross section is isolated by isolated film, and row metal line is equal with the quantity of row metal wire, the interval of adjacent column metal wire with
The interval of adjacent rows metal wire is equal, several equally spaced windowed regions are offered on each metal wire, and windowed regions point has
Elargol is sprayed with scolding tin.
5. broad-area electrode LED array preparation method according to claim 3 or 4, which is characterized in that the metal wire
Line width, the interval of adjacent wires, the interval of windowed regions and area be sized to according to the size of required LED wafer volume and
The space requirement of array and accordingly change.
6. broad-area electrode LED array preparation method according to claim 5, which is characterized in that the row metal wire and
The material of row metal line is conductor material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610223901.6A CN105720146B (en) | 2016-04-12 | 2016-04-12 | A kind of broad-area electrode LED array preparation method |
| PCT/CN2017/076030 WO2017177779A1 (en) | 2016-04-12 | 2017-03-09 | Preparation method for large-area electrode led array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610223901.6A CN105720146B (en) | 2016-04-12 | 2016-04-12 | A kind of broad-area electrode LED array preparation method |
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| Publication Number | Publication Date |
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| CN105720146A CN105720146A (en) | 2016-06-29 |
| CN105720146B true CN105720146B (en) | 2018-08-31 |
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| WO (1) | WO2017177779A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105720146B (en) * | 2016-04-12 | 2018-08-31 | 中山大学 | A kind of broad-area electrode LED array preparation method |
| CN106374008B (en) * | 2016-09-08 | 2018-01-26 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of preparation method of large area sensor array |
| TWI689105B (en) * | 2017-12-19 | 2020-03-21 | 優顯科技股份有限公司 | Optoelectronic semiconductor stamp and manufacturing method thereof, and optoelectronic semiconductor device |
| CN108538971A (en) * | 2018-03-23 | 2018-09-14 | 深圳雷曼光电科技股份有限公司 | Transfer method and display device |
| CN108364581B (en) * | 2018-03-29 | 2020-09-15 | 深圳市思坦科技有限公司 | Preparation method of light-emitting diode micro display screen and micro display screen |
| CN109920746B (en) * | 2018-12-26 | 2024-06-25 | 广东欧美亚智能装备有限公司 | Full-automatic crystal expanding machine |
| CN112967999B (en) * | 2020-09-27 | 2022-09-20 | 苏州苏纳光电有限公司 | Preparation method for semiconductor chip film expansion |
| CN112492755B (en) * | 2020-11-02 | 2022-09-27 | 江西旭昇电子有限公司 | Method for manufacturing micro solder mask definition bonding pad of lead-free tin-spraying plate |
| CN114530539B (en) * | 2020-11-23 | 2024-10-08 | 深圳市洲明科技股份有限公司 | LED die bonding system and die bonding method thereof |
| CN113451158A (en) * | 2021-04-25 | 2021-09-28 | 福建天电光电有限公司 | Flip chip package structure and manufacturing process thereof |
| WO2022266839A1 (en) * | 2021-06-22 | 2022-12-29 | 京东方科技集团股份有限公司 | Flux, substrate, manufacturing method therefor, and apparatus |
| CN113793888A (en) * | 2021-09-15 | 2021-12-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Mini-LED display module and alignment tolerance design method of core particle electrode thereof |
| CN114664689A (en) * | 2021-12-03 | 2022-06-24 | 江苏稳润光电有限公司 | Preprocessing wafer expanding equipment for preparing digital display module LED device |
| CN114669496B (en) * | 2022-04-24 | 2024-08-13 | 江西兆驰半导体有限公司 | LED chip sorting method |
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| CN1996564A (en) * | 2006-01-06 | 2007-07-11 | 日月光半导体制造股份有限公司 | Encapsulation method and its structure |
| CN102054919A (en) * | 2009-11-02 | 2011-05-11 | 深圳市鸿智电子技术有限公司 | High-brightness yellow-green lamp and manufacturing method thereof |
| CN202013103U (en) * | 2011-01-06 | 2011-10-19 | 昆山琉明光电有限公司 | Thermostatic light-emitting diode baking box |
| CN103400779B (en) * | 2013-07-09 | 2014-09-03 | 程君 | Manufacturing method of semiconductor display panel |
| CN103646956B (en) * | 2013-12-25 | 2016-07-06 | 中国电子科技集团公司第四十四研究所 | Band protecting film CCD chip packaging technology |
| CN105244360B (en) * | 2015-10-29 | 2019-02-26 | 苏州晶方半导体科技股份有限公司 | Sensitive chip encapsulating structure and its packaging method |
| CN105720146B (en) * | 2016-04-12 | 2018-08-31 | 中山大学 | A kind of broad-area electrode LED array preparation method |
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| WO2017177779A1 (en) | 2017-10-19 |
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