CN105826453A - Preparation method of COB optical module and COB optical module - Google Patents
Preparation method of COB optical module and COB optical module Download PDFInfo
- Publication number
- CN105826453A CN105826453A CN201610307766.3A CN201610307766A CN105826453A CN 105826453 A CN105826453 A CN 105826453A CN 201610307766 A CN201610307766 A CN 201610307766A CN 105826453 A CN105826453 A CN 105826453A
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- China
- Prior art keywords
- circuit substrate
- silica gel
- fluorescence coating
- slide glass
- led chip
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 230000003287 optical effect Effects 0.000 title abstract 12
- 239000000758 substrate Substances 0.000 claims abstract description 67
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000000741 silica gel Substances 0.000 claims abstract description 64
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 64
- 239000011521 glass Substances 0.000 claims abstract description 35
- 238000000576 coating method Methods 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 239000011248 coating agent Substances 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- 241000218202 Coptis Species 0.000 claims description 12
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- 239000000499 gel Substances 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 5
- 238000009434 installation Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000000084 colloidal system Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a preparation method of a COB optical module and a COB optical module. The COB optical module includes an LED chip, a circuit substrate, a silica gel fluorescent layer, a box dam, a transparent silica gel layer and a pad, wherein a slide glass area is arranged on the circuit substrate; the slide glass area is an upper groove in the circuit substrate; the silica gel fluorescent layer is located in the slide glass area; the box dam is located at the periphery of the transparent silica gel layer; the pad includes an anode pad and a cathode pad; the LED chip is arranged in the slide glass area; the anode of the LED chip is electrically connected with the anode pad through a gold wire; and the cathode of the LED chip is electrically connected with the cathode pad through a gold wire. The preparation method of a COB optical module and the COB optical module can solve heat radiation problem of the fluorescent powder and can avoid the problem that the colloid is cracked because the colloid temperature is greater than the ultimate temperature. Besides, the preparation method of a COB optical module and the COB optical module can improve the light spot, reduce the cost and improve the production efficiency. For the preparation method of a COB optical module and the COB optical module, as the transparent silica gel is dispensed on the silica gel fluorescent layer, a smaller beam angle and a greater central light strength can be realized, so that the luminous efficiency of the COB optical module can be improved.
Description
Technical field
The invention belongs to light emitting diode method for product encapsulation field, particularly relate to preparation method and the COB light module of a kind of COB light module.
Background technology
In LED application, LED module is because of its super brightness, the features such as low-power consumption, length in service life, simple installation, being widely used in the places such as advertising lamp box, mark signboard, publicity Warning Mark, along with the gradually maturation of LED module technology, its range of application will be the most extensive, in LED module, Chang Shiyong's is exactly COB encapsulation, but current COB encapsulating light emitting efficiency is low, lighting angle is big, and hot spot is obvious, radiating effect is poor；And little light-emitting area powerful COB light source cost is high, production efficiency is low.
Summary of the invention
In order to overcome the deficiencies in the prior art, an object of the present invention is to provide the preparation method of a kind of COB light module, and its light efficiency that can solve COB is not enough, and fluorescent colloid is too high due to temperature and the problem that causes colloid to ftracture.
The two of the purpose of the present invention are to provide a kind of COB light module, and its light efficiency that can solve COB is not enough, and fluorescent colloid is too high due to temperature and the problem that causes colloid to ftracture.
Realize by the following technical solutions for realizing an object of the present invention:
The preparation method of a kind of COB light module, comprises the following steps:
Die bond step: put liquid crystal-bonding adhesive on the die bond position in circuit substrate slide glass district, LED chip be mounted on die bond position, then toast circuit substrate, so that crystal-bonding adhesive solidification, described slide glass district is a groove on circuit substrate；
Bonding wire step: positive terminal pad is welded with the positive pole of LED chip by gold thread, negative terminal pad is welded with the negative pole of LED chip by gold thread；
Silica gel fluorescence coating making step: fluorescent material is stirred evenly with liquid-state silicon gel blending and obtains liquid fluorescent silica gel, again the liquid fluorescent silica gel of predetermined amount is dripped in circuit substrate slide glass district, circuit substrate is toasted, so that liquid fluorescent silica gel solidify to form silica gel fluorescence coating；
Box dam installation steps: organic silica gel is carried out on circuit substrate a glue to form a ring-type box dam, and described LED chip and silica gel fluorescence coating are respectively positioned in this box dam；
Transparent silicon glue-line making step: dripped in this box dam by liquid-state silicon gel, then toast circuit substrate, so that the liquid-state silicon gel in box dam solidify to form transparent silicon glue-line.
Preferably, also include in silica gel fluorescence coating making step, the silica gel fluorescence coating dripped on circuit substrate is filled up circuit substrate slide glass district.The technical problem of the thickness of silica gel fluorescence coating can be solved further.
Preferably, the baking that carries out circuit substrate in described silica gel fluorescence coating making step specifically includes following steps:
Toasting in circuit substrate is positioned over baking box, baking temperature is 150 degrees Celsius, and baking time is 1 hour.The problem that can solve the baking of silica gel fluorescence coating further.
Preferably, the baking that carries out circuit substrate again in described die bond step specifically includes following steps: toasting in circuit substrate is placed on baking box, baking temperature is 150 degrees Celsius, and baking time is 1.5 hours.The concrete steps of die bond can be solved further.
Preferably, the baking that carries out circuit substrate again in described transparent silicon glue-line making step specifically includes following steps: toasting in circuit substrate is placed on baking box, baking temperature is 150 degrees Celsius, and baking time is 2 hours.The problem that can solve the baking of transparent silicon glue-line further.
Preferably, described box dam and transparent silicon glue-line is generally circular in shape.The problem that can solve the shape of box dam and transparent silicon glue-line further.
Realize by the following technical solutions for realizing the two of the purpose of the present invention:
A kind of COB light module, including LED chip, circuit substrate, silica gel fluorescence coating, box dam, transparent silicon glue-line and pad, a slide glass district is had on described circuit substrate, described slide glass district is a groove on circuit substrate, described silica gel fluorescence coating is positioned at slide glass district, described transparent silicon glue-line is positioned on silica gel fluorescence coating, and described box dam is positioned at the periphery of transparent silicon glue-line；Described pad includes that positive terminal pad and negative terminal pad, described LED chip are arranged on slide glass district, and the positive pole of described LED chip is electrically connected with positive terminal pad by gold thread, and described LED chip negative pole is electrically connected with negative terminal pad by gold thread.
Preferably, the height of described silica gel fluorescence coating is identical with slide glass district height.The technical problem of the thickness of silica gel fluorescence coating can be solved further.
Preferably, described box dam and transparent silicon glue-line is generally circular in shape.The problem that can solve the shape of box dam and transparent silicon glue-line further.
Preferably, described transparent silicon glue-line covers silica gel fluorescence coating.The size issue of silica gel fluorescence coating and transparent silicon glue-line can be solved further.
Preferably, the projection on circuit substrate of the described transparent silicon glue-line projects on circuit substrate with silica gel fluorescence coating and overlaps.The size issue of silica gel fluorescence coating and transparent silicon glue-line can be solved further.
Compared to existing technology, the beneficial effects of the present invention is:
The COB light source using fluorescent material near field coating processes of the present invention solves the heat radiation of fluorescent material, it is to avoid colloid temperature oversteps the extreme limit the problem that temperature causes colloid cracking；And this COB light module can improve hot spot, reduce cost, improve production efficiency.Silica gel fluorescence coating is put transparent silica gel and realizes less beam angle and bigger central light strength, promote the light efficiency of COB light module.
Accompanying drawing explanation
Fig. 1 is the flow chart of the preparation method of the present invention a kind of COB light module；
Fig. 2 is the front view of the present invention a kind of COB light module；
Fig. 3 is the top view of the present invention a kind of COB light module.
Reference: 1, LED chip；2, circuit substrate；3, silica gel fluorescence coating；4, box dam；5, transparent silicon glue-line；6, positive terminal pad；7, negative terminal pad.
Detailed description of the invention
Below, in conjunction with accompanying drawing and detailed description of the invention, the present invention is described further:
As it is shown in figure 1, the invention provides the preparation method of a kind of COB light module, comprise the following steps:
Die bond step: put liquid crystal-bonding adhesive on the die bond position in circuit substrate 2 slide glass district, LED chip 1 be mounted on die bond position, then toast circuit substrate 2, so that crystal-bonding adhesive solidification, described slide glass district is a groove on circuit substrate 2；
The baking that carries out circuit substrate again in described die bond step specifically includes following steps: toast in circuit substrate 2 is placed on baking box, baking temperature is 145 degrees Celsius to 155 degrees Celsius, baking time is 2 hours, and described slide glass district is a groove on circuit substrate.
Bonding wire step: positive terminal pad 6 is welded with the positive pole of LED chip 1 by gold thread, negative terminal pad 7 is welded with the negative pole of LED chip 1 by gold thread；
Silica gel fluorescence coating 3 making step: fluorescent material is stirred evenly with liquid-state silicon gel blending and obtains liquid fluorescent silica gel, again the liquid fluorescent silica gel of predetermined amount is dripped in circuit substrate 2 slide glass district, circuit substrate 2 is toasted, so that liquid fluorescent silica gel solidify to form silica gel fluorescence coating 3；Wherein said fluorescent material to carry out corresponding debugging according to actual colour temperature with the concentration ratio of liquid-state silicon gel and reach more preferable effect.
Baking procedure in described silica gel fluorescence coating making step that is to say that circuit substrate 2 carries out baking specifically includes following steps:
Toasting in circuit substrate 2 is positioned over baking box, baking temperature is 150 degrees Celsius, and baking time is 1 hour.
Filling step: the silica gel fluorescence coating 3 dripped on circuit substrate 2 is filled up circuit substrate 2 slide glass district.
Box dam 4 installation steps: organic silica gel is carried out on circuit substrate 2 glue to form a ring-type box dam 4, and described LED chip 1 and silica gel fluorescence coating 3 are respectively positioned in this box dam 4；
Transparent silicon glue-line 5 making step: liquid-state silicon gel is dripped in this box dam 4, then the liquid-state silicon gel being baked in order so that in box dam 4 to circuit substrate 2 solidify to form transparent silicon glue-line 5；
In described transparent silicon glue-line 5 making step, baking procedure that is to say that again circuit substrate 2 being carried out baking specifically includes following steps: toasting in circuit substrate 2 is placed on baking box, baking temperature is 150 degrees Celsius, and baking time is 2 hours.
The present invention uses and first puts fluorescent glue; make silica gel fluorescence coating 3 from the Distance Shortened of circuit substrate 2; directly dispelled the heat by circuit substrate 2; do box dam 4 again; thus it is not result in that silica gel fluorescence coating 3 flows toward box dam 4 surrounding; rearmost point transparent silicon glue-line 5 plays the effect of protection, and such way can either solve the problem of heat radiation, can solve the problem that again light source irradiates the problem producing hot spot.
As shown in Figures 2 and 3, present invention also offers a kind of COB light module applying above-mentioned COB light module preparation method to make, including LED chip 1, circuit substrate 2, silica gel fluorescence coating 3, box dam 4, transparent silicon glue-line 5 and pad, a slide glass district is had on described circuit substrate 2, described slide glass district is a groove on circuit substrate 2, described silica gel fluorescence coating 3 fills up slide glass district, the height of described silica gel fluorescence coating 3 is identical with slide glass district height, that is to say that fluorescent glue is filled in slide glass district, fill up slide glass district and tie with slide glass district, filling and leading up the groove on script circuit substrate 2.Described transparent silicon glue-line 5 is positioned on silica gel fluorescence coating 3; the size of described silica gel fluorescence coating 3 and transparent silicon glue-line 5 projection on circuit substrate 2 is identical; transparent silicon glue-line 5 primarily serves the effect of protection silica gel fluorescence coating 3 at this, and described box dam 4 is positioned at the periphery of transparent silicon glue-line 5；Described box dam 4 and transparent silicon glue-line 5 generally circular in shape, described box dam 4 is to prevent silica gel fluorescence coating 4 excessive.Described pad includes that positive terminal pad 6 and negative terminal pad 7, described LED chip 1 are arranged on slide glass district, and the positive pole of described LED chip 1 is electrically connected with positive terminal pad 6 by gold thread, and described LED chip 1 negative pole is electrically connected with negative terminal pad 7 by gold thread.
It will be apparent to those skilled in the art that can technical scheme as described above and design, make other various corresponding changes and deformation, and within all these changes and deformation all should belong to the protection domain of the claims in the present invention.
Claims (10)
1. the preparation method of a COB light module, it is characterised in that comprise the following steps:
Die bond step: put liquid crystal-bonding adhesive on the die bond position in circuit substrate slide glass district, LED chip be mounted on die bond position, then toast circuit substrate, so that crystal-bonding adhesive solidification, described slide glass district is a groove on circuit substrate；
Bonding wire step: positive terminal pad is welded with the positive pole of LED chip by gold thread, negative terminal pad is welded with the negative pole of LED chip by gold thread；
Silica gel fluorescence coating making step: fluorescent material is stirred evenly with liquid-state silicon gel blending and obtains liquid fluorescent silica gel, again the liquid fluorescent silica gel of predetermined amount is dripped in circuit substrate slide glass district, circuit substrate is toasted, so that liquid fluorescent silica gel solidify to form silica gel fluorescence coating；
Box dam installation steps: organic silica gel is carried out on circuit substrate a glue to form a ring-type box dam, and described LED chip and silica gel fluorescence coating are respectively positioned in this box dam；
Transparent silicon glue-line making step: dripped in this box dam by liquid-state silicon gel, then toast circuit substrate, so that the liquid-state silicon gel in box dam solidify to form transparent silicon glue-line.
2. the preparation method of COB light module as claimed in claim 1, it is characterised in that also include in silica gel fluorescence coating making step, the silica gel fluorescence coating dripped on circuit substrate is filled up circuit substrate slide glass district.
3. the preparation method of COB light module as claimed in claim 1, it is characterised in that the baking that carries out circuit substrate in described silica gel fluorescence coating making step specifically includes following steps:
Toasting in circuit substrate is positioned over baking box, baking temperature is 150 degrees Celsius, and baking time is 1 hour.
4. the preparation method of COB light module as claimed in claim 1, it is characterised in that the baking that carries out circuit substrate again in this die bond step specifically includes following steps:
Toasting in circuit substrate is placed on baking box, baking temperature is 150 degrees Celsius, and baking time is 1.5 hours.
5. the preparation method of COB light module as claimed in claim 1, it is characterised in that the baking that carries out circuit substrate again in described transparent silicon glue-line making step specifically includes following steps:
Toasting in circuit substrate is placed on baking box, baking temperature is 150 degrees Celsius, and baking time is 2 hours.
6. apply the COB light module that COB light module preparation method as claimed in claim 1 makes for one kind, it is characterized in that, including LED chip, circuit substrate, silica gel fluorescence coating, box dam, transparent silicon glue-line and pad, a slide glass district is had on described circuit substrate, described slide glass district is a groove on circuit substrate, described silica gel fluorescence coating fills up slide glass district, and described transparent silicon glue-line is positioned on silica gel fluorescence coating, and described box dam is positioned at the periphery of transparent silicon glue-line；Described pad includes that positive terminal pad and negative terminal pad, described LED chip are arranged on slide glass district, and the positive pole of described LED chip is electrically connected with positive terminal pad by gold thread, and described LED chip negative pole is electrically connected with negative terminal pad by gold thread.
7. COB light module as claimed in claim 6, it is characterised in that the height of described silica gel fluorescence coating is identical with slide glass district height.
8. COB light module as claimed in claim 6, it is characterised in that described box dam and transparent silicon glue-line generally circular in shape.
9. COB light module as claimed in claim 6, it is characterised in that described transparent silicon glue-line covers silica gel fluorescence coating.
10. COB light module as claimed in claim 9, it is characterised in that the projection on circuit substrate of the described transparent silicon glue-line overlaps with the projection on circuit substrate of the silica gel fluorescence coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610307766.3A CN105826453A (en) | 2016-05-09 | 2016-05-09 | Preparation method of COB optical module and COB optical module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610307766.3A CN105826453A (en) | 2016-05-09 | 2016-05-09 | Preparation method of COB optical module and COB optical module |
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| CN105826453A true CN105826453A (en) | 2016-08-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610307766.3A Pending CN105826453A (en) | 2016-05-09 | 2016-05-09 | Preparation method of COB optical module and COB optical module |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106571419A (en) * | 2016-11-07 | 2017-04-19 | 深圳市源磊科技有限公司 | Method for manufacturing flashlight |
| CN106678563A (en) * | 2017-02-21 | 2017-05-17 | 中国人民大学 | Photo-thermal integration type LED lighting lamp and manufacturing method thereof |
| CN107275459A (en) * | 2017-06-16 | 2017-10-20 | 深圳市科艺星光电科技有限公司 | Potted element and its manufacture method |
| CN109107775A (en) * | 2017-06-26 | 2019-01-01 | 广州硅能照明有限公司 | LED substrate centrifugal device and using method thereof |
| CN110600460A (en) * | 2019-08-21 | 2019-12-20 | 芜湖安瑞光电有限公司 | High-power LED light source of automobile lamp and production process thereof |
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| CN103413885A (en) * | 2013-07-31 | 2013-11-27 | 广州硅能照明有限公司 | Manufacturing method of isolation type COB light source module |
| CN203850297U (en) * | 2014-03-11 | 2014-09-24 | 易美芯光（北京）科技有限公司 | A structure raising an LED integrated optical source luminous flux output |
| CN205752232U (en) * | 2016-05-09 | 2016-11-30 | 广州硅能照明有限公司 | A kind of COB light module |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106571419A (en) * | 2016-11-07 | 2017-04-19 | 深圳市源磊科技有限公司 | Method for manufacturing flashlight |
| CN106571419B (en) * | 2016-11-07 | 2019-04-30 | 深圳市源磊科技有限公司 | A kind of production method of flash lamp |
| CN106678563A (en) * | 2017-02-21 | 2017-05-17 | 中国人民大学 | Photo-thermal integration type LED lighting lamp and manufacturing method thereof |
| CN107275459A (en) * | 2017-06-16 | 2017-10-20 | 深圳市科艺星光电科技有限公司 | Potted element and its manufacture method |
| CN107275459B (en) * | 2017-06-16 | 2024-02-02 | 万澄林置业(深圳)有限公司 | Package element and manufacturing method thereof |
| CN109107775A (en) * | 2017-06-26 | 2019-01-01 | 广州硅能照明有限公司 | LED substrate centrifugal device and using method thereof |
| CN109107775B (en) * | 2017-06-26 | 2023-11-10 | 硅能光电半导体(广州)有限公司 | LED substrate centrifugal device and use method thereof |
| CN110600460A (en) * | 2019-08-21 | 2019-12-20 | 芜湖安瑞光电有限公司 | High-power LED light source of automobile lamp and production process thereof |
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Application publication date: 20160803 |