CN106678563A - Photo-thermal integration type LED lighting lamp and manufacturing method thereof - Google Patents
Photo-thermal integration type LED lighting lamp and manufacturing method thereof Download PDFInfo
- Publication number
- CN106678563A CN106678563A CN201710092255.9A CN201710092255A CN106678563A CN 106678563 A CN106678563 A CN 106678563A CN 201710092255 A CN201710092255 A CN 201710092255A CN 106678563 A CN106678563 A CN 106678563A
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- Prior art keywords
- light source
- flip
- chip
- temperature
- led
- Prior art date
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Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/77—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
- F21V29/773—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V17/00—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
- F21V17/10—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening
- F21V17/101—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening permanently, e.g. welding, gluing or riveting
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
Abstract
The invention discloses a photo-thermal integration type LED lighting lamp and a manufacturing method of the photo-thermal integration type LED lighting lamp. The photo-thermal integration type LED lighting lamp comprises a cooling device and an LED light source. The cooling device comprises a vapor chamber and cooling fins. The vapor chamber is arranged on the cooling fins. The LED light source is arranged on the vapor chamber. The manufacturing method of the photo-thermal integration type LED lighting lamp comprises the following steps that firstly, a circuit and a die bond area are arranged on one face of a light source substrate, and a weldable layer is arranged on the other face of the light source substrate; secondly, a flip chip is fixed to the die bond area, eutectic soldering is conducted, and then a blue light source; thirdly, dam adhesive is applied to the die bond area around the blue light source, and drying and cooling are conducted; fourthly, the flip chip which is treated in the third step is coated with a fluorescent layer, and then the fluorescent layer is baked and fixed; and fifthly, the LED light source obtained through in the fourth step is welded to the vapor chamber through the weldable layer. The photo-thermal integration type LED lighting lamp has large power; and the manufacturing method of the photo-thermal integration type LED lighting lamp simplifies connection between an LED module and the cooling device and reduces heat resistance.
Description
Technical field
The present invention relates to a kind of light-heat integration LED illumination lamp and preparation method thereof, belongs to LED field.
Background technology
LED (Light Emitting Diode), light emitting diode is a kind of can to convert electrical energy into consolidating for visible ray
The semiconductor devices of state, it directly can be converted into light electricity.The features such as LED has low-power consumption, green energy conservation, therefore can be by
Various large-power lamps are widely used in, such as high-power venue Projecting Lamp, beacon high-altitude shot-light；When light fixture needs to do larger work(
During rate, conventional LED lamp needs to design multiple LED modules to spell composition large-power lamp, so needing many LED modules
Mounted on a heat sink by heat-conducting silicone grease；Heat-conducting silicone grease thermal conductivity factor is low, and thermal resistance is larger, easily cause LED/light source decay and
Damage.But these components are in design and installation, it is desirable to have higher quality of fit, while taking larger area, light-emitting area
It is larger to be unfavorable for lamp distribution.
The content of the invention
It is an object of the invention to provide a kind of light-heat integration LED illumination lamp and preparation method thereof；Photo-thermal of the present invention one
Body LED illumination lamp has larger power；Its preparation method simplifies the connection between LED modules and radiator, reduces
Thermal resistance.
The light-heat integration LED illumination lamp that the present invention is provided, it includes radiator and LED illuminating sources；
The radiator includes temperature-uniforming plate and radiating fin, and the temperature-uniforming plate is on the radiating fin；
The LED illuminating sources are arranged on the temperature-uniforming plate.
In above-mentioned LED illumination lamp, the LED illuminating sources include fluorescence coating, the upside-down mounting for setting gradually from top to bottom
Chip and light source substrate；
Circuit is arranged in the one side of the light source substrate and crystal bonding area is set, another side arrangement can layer；
The flip-chip is arranged on the crystal bonding area, along the die bond area edge box dam on the flip-chip
Glue；
The LED illuminating sources by it is described can layer be arranged on the temperature-uniforming plate.
In above-mentioned LED illumination lamp, the light source substrate is selected from aluminium nitride substrate, aluminum oxide substrate, aluminium base and copper
At least one in substrate；
The flip-chip is flip LED chips；
The material of the fluorescence coating is phosphor gel and/or fluorescent crystal, and the phosphor gel is silica gel mixed fluorescent powder
Or epoxy resin mixed fluorescent powder, 20~80% are contained in the silica gel mixed fluorescent powder or the epoxy resin mixed fluorescent powder
Fluorescent material, the fluorescent crystal is glass fluorescent crystal or transparent fluorescent ceramic.
In above-mentioned LED illumination lamp, the thickness of the fluorescence coating can be 0.1~0.8mm, concretely 0.2mm, 0.1
~0.2mm or 0.2~0.8mm；
The thickness of the light source substrate can be 0.5~3mm, concretely 1.0mm, 0.5~1mm, 1~3mm.
In above-mentioned LED illumination lamp, described in the LED illuminating sources Jing can layer welding or be directly inverted in it is described
On warm plate, it is concrete using can be on layer light source pad solder or be directly inverted on the temperature-uniforming plate；
It is described can layer using cellular.
The preparation method of above-mentioned LED illumination lamp, comprises the steps in the present invention：
1) by a face cloth circuits of the light source substrate and crystal bonding area is set, the another side of the light source substrate is arranged can
Layer；
2) flip-chip is fixed on the crystal bonding area, carries out eutectic welding, form blue light source；
3) along the crystal bonding area by the blue light source box dam glue, toast, cool down；
4) Jing above-mentioned steps 3) process the flip-chip on coat fluorescence coating, then carry out baking fixation, obtain institute
State LED illuminating sources；
5) by step 4) process described in the LED illuminating sources Jing that obtains can layer be welded to the described of the radiator
On temperature-uniforming plate；
The radiator includes temperature-uniforming plate and radiating fin, and the temperature-uniforming plate is on the radiating fin.
In above-mentioned preparation method, the circuit, crystal bonding area with it is described can layer using screen printing method printing obtain；
The method of the fixation of the flip-chip is die bond method, and the fixation of the flip-chip adopts bonder；Using altogether
Brilliant stove carries out the eutectic welding；
The box dam glue is enclosed using point gum machine；
The material of the box dam glue can be white RTV silica gel, milky silica gel or transparent silica gel.
Above-mentioned preparation method, step 3) in, the temperature of the baking can be 135~165 DEG C, concretely 150 DEG C, institute
The time for stating baking can be 0.5~3h, concretely 1h；
Above-mentioned steps 4) in, the temperature of the baking can be 145~175 DEG C, concretely 165 DEG C, the baking when
Between can be 0.5~3h, concretely 2h.
Above-mentioned preparation method, step 5) in, the welding is carried out by reflow method.
The present invention has advantages below：
1) flip-chip is by eutectic furnace eutectic to aluminium nitride substrate so that flip-chip is tight with aluminium nitride substrate
Close being combined into one structure.
2) using eutectic furnace by flip-chip eutectic on the crystal bonding area of aluminium nitride substrate, the technique using flip-chip simultaneously
With reference to eutectic technology, old technique elargol or insulating cement die bond not only can be substituted, chip will not occur what is come off because of ambient influnence
Phenomenon；And without gold thread welding, substantial amounts of material cost and human resources can be saved, greatly simplify production process and improve
Production efficiency, and without the stress problem between gold thread and chip and fluorescent material, single chip under the driving of high current not yet
The dead lamp phenomenon of broken string occurs, efficiently solves the problems, such as that light source can not bear long-term large driven current density work.
3) by reflow soldering linking into an integrated entity structure between aluminum oxide substrate and radiator are heat sink, so far upside-down mounting core
Piece, aluminium nitride substrate, radiator temperature-uniforming plate form integration, and heat transfer path is unimpeded, and thermal resistance can be very little, and flip-chip was lighted
The derivation that the heat of generation can be quickly good in journey comes, and is diffused in air by radiating fin, greatly improves product
Service life.
4) present invention there is thermoelectricity good separating effect, chip to be firmly combined with difficult for drop-off, luminous flux is high, light efficiency is good, production
Technique is advanced and the features such as high production efficiency.
Description of the drawings
Fig. 1 is that traditional LED lamp has positive structure schematic.
Each mark is as follows in Fig. 1：
1 ' LED light emitting source photopolymer substrates；2 ' LED illuminating sources；3 ' substrate wire guides；4 ' light source pads.
Fig. 2 is the structural representation of the side of Fig. 1.
Each mark is as follows in Fig. 2：
1 ' LED illuminating source substrates；2 ' LED illuminating sources；5 ' welding tin creams；6 ' heat-conducting silicone greases；7 ' radiator temperature-uniforming plates；
8 ' radiating fins.
Fig. 3 is the structural representation of the light source aluminium nitride substrate one side of light-heat integration LED high-power illumination light fixtures of the present invention
Figure.
Fig. 4 is the positive structural representation of light-heat integration LED high-power illumination light fixtures of the present invention.
Fig. 5 is the structural representation of light-heat integration LED high-power illumination light fixtures side.
Each mark is as follows in Fig. 3-5：
1 temperature-uniforming plate, 2 light source pads, 3 light source substrates, 4 box dam glue, 5LED illuminating sources；6 can layer；7 radiating fins.
Fig. 6 is the line map of light source substrate.
Each mark is as follows in Fig. 6：
61 die bond positions；62 line layers；63 power supply source wire bonding points.
Specific embodiment
Experimental technique used in following embodiments if no special instructions, is conventional method.
Material used, reagent etc. in following embodiments, if no special instructions, commercially obtain.
Embodiment 1, light-heat integration LED high-power illumination light fixtures and preparation method thereof
As shown in figure 5, light-heat integration LED high-power illumination light fixtures of the present invention, it includes radiator and LED illuminating sources
5；Radiator includes temperature-uniforming plate 1 and radiating fin 7, and temperature-uniforming plate 1 is on radiating fin 7.LED illuminating sources 5 specifically include by
The thickness that top to bottm sets gradually is the light source substrate 3 of fluorescence coating, flip-chip and thickness for 1.0mm of 0.2mm；Light source substrate
Circuit is arranged in 3 one side and crystal bonding area is set, another side arrangement is cellular can layer；Flip-chip is arranged on crystal bonding area,
Along die bond area edge box dam glue 4 on flip-chip；LED illuminating sources 5 by can the light source pad 2 of layer 6 be arranged at
On warm plate 1.
Wherein, light source substrate is selected from aluminium nitride substrate；
Flip-chip is flip LED chips；
The material of fluorescence coating is specially transparent fluorescent ceramic.
Light-heat integration LED high-power illumination light fixtures of the present invention with as depicted in figs. 1 and 2 traditional LED lamp have compared with, this
Invention flip-chip, aluminium nitride substrate, radiator temperature-uniforming plate form integration, and heat transfer path is unimpeded, and thermal resistance can be very little, upside-down mounting
The derivation that the heat of generation can be quickly good in chip ignition comes, and is diffused in air by radiating fin, greatly
Improve the service life of product.
The preparation method of light-heat integration LED high-power illumination light fixtures of the present invention, comprises the steps：
1) corresponding line map (61 die bond positions as shown in Figure 6 are arranged by silk-screen printing in the one side of aluminium nitride substrate
Put；62 line layers；63 power supply source wire bonding points) circuit line and crystal bonding area, the another side of aluminium nitride substrate printed by screen printing method
Brush it is cellular can layer, as shown in Figure 3；
2) using bonder flip LED chips are fixed on the crystal bonding area of aluminium nitride substrate by die-bonding method；
3) aluminium nitride substrate of solid good flip-chip carries out eutectic welding by eutectic furnace, completes eutectic technology and forms indigo plant
Radiant；
Light source pad and chip electrode pass through Reflow Soldering solder bond；
4) blue light source is toasted, the temperature of baking by the way that point gum machine is along crystal bonding area box dam glue and forms barrier wall structure
150 DEG C, the time 1h of baking, cooling；
5) by Jing step 4) fluorescent crystal that processes by bonder be mounted on directly over flip-chip and after row baking admittedly
Fixed, 165 DEG C of baking temperature, the time 2h of baking obtains being provided with the aluminium nitride substrate of LED illuminating sources；
6) the above-mentioned aluminium nitride substrate for being provided with LED illuminating sources is welded to the temperature-uniforming plate of radiator by Reflow Soldering mode
On, the temperature-uniforming plate for making flip-chip, aluminium nitride substrate, radiator forms integration；
Wherein radiator includes temperature-uniforming plate and radiating fin, and temperature-uniforming plate is on radiating fin.
The spectrum test data of the light-heat integration LED illumination lamp that the present invention is obtained are as follows：
Test condition：Method of testing adopts integrating sphere measurement；
Environment temperature：25.3Deg；Ambient humidity：65%；
Test scope：380nm-780nm；Peak I P：50917 (78%)；
Measurement pattern：The accurate test time of integration：114ms.
Wherein, CIE color parameters are as shown in table 1.
Table 1CIE color parameters
Optical parameter result is as follows：Luminous flux phi=28674lm light efficiencies：118lm/w radiation flux Φ e=111.744w scotopias
Feel：7348.9S/P:1.7603；
Electrical quantity result is as follows：Setting input voltage V=54V, input current I=4.5A, test result is the LED/light source
Power P=243W；Power factor PF=1.000.
It is seen from the above data that the light-heat integration LED lamp that the present invention is provided realizes stable high light flux
And specular removal, more than 118lm/W, luminous flux is more than 28674lm for its light valid value.
Claims (9)
1. a kind of LED illumination lamp, it is characterised in that：It includes radiator and LED illuminating sources；
The radiator includes temperature-uniforming plate and radiating fin, and the temperature-uniforming plate is on the radiating fin；
The LED illuminating sources are arranged on the temperature-uniforming plate.
2. LED illumination lamp according to claim 1, it is characterised in that：The LED illuminating sources include from top to bottom according to
The fluorescence coating of secondary setting, flip-chip and light source substrate；
Circuit is arranged in the one side of the light source substrate and crystal bonding area is set, another side arrangement can layer；
The flip-chip is arranged on the crystal bonding area, along the die bond area edge box dam glue on the flip-chip；
The LED illuminating sources by it is described can layer be arranged on the temperature-uniforming plate.
3. LED illumination lamp according to claim 1 and 2, it is characterised in that：The light source substrate is selected from aluminum-nitride-based
At least one in plate, aluminum oxide substrate, aluminium base and copper base；
The flip-chip is flip LED chips；
The material of the fluorescence coating is phosphor gel and/or fluorescent crystal, and the phosphor gel is silica gel mixed fluorescent powder or ring
Oxygen tree fat mixed fluorescent powder, the fluorescent crystal is glass fluorescent crystal or transparent fluorescent ceramic.
4. the LED illumination lamp according to any one of claim 1-3, it is characterised in that：The thickness of the fluorescence coating is
0.1~0.8mm；
The thickness of the light source substrate is 0.5~3mm.
5. the LED illumination lamp according to any one of claim 1-4, it is characterised in that：The LED illuminating sources Jing institutes
State can layer welding or be directly inverted on the temperature-uniforming plate；
It is described can layer using cellular.
6. the preparation method of the LED illumination lamp any one of claim 1-5, comprises the steps：
1) by a face cloth circuits of the light source substrate and crystal bonding area is set, the another side of the light source substrate arranges solderable
Layer；
2) flip-chip is fixed on the crystal bonding area, carries out eutectic welding, form blue light source；
3) along the crystal bonding area by the blue light source box dam glue, toast, cool down；
4) Jing above-mentioned steps 3) process the flip-chip on coat fluorescence coating, then carry out baking fixation, obtain the LED
Illuminating source；
5) by step 4) process described in the LED illuminating sources Jing that obtains can layer be welded to the samming of the radiator
On plate；
The radiator includes temperature-uniforming plate and radiating fin, and the temperature-uniforming plate is on the radiating fin.
7. preparation method according to claim 6, it is characterised in that：The circuit, crystal bonding area with it is described can layer adopt
Obtained with screen printing method printing；
The method of the fixation of the flip-chip is die bond method, and the fixation of the flip-chip adopts bonder；Using eutectic furnace
Carry out the eutectic welding；
The box dam glue is enclosed using point gum machine；
The material of the box dam glue is white RTV silica gel, milky silica gel or transparent silica gel.
8. the preparation method according to claim 6 or 7, it is characterised in that：Above-mentioned steps 3) in, the temperature of the baking is
135~165 DEG C, the time of the baking is 0.5~3h；
Above-mentioned steps 4) in, the temperature of the baking is 145~175 DEG C, and the time of the baking is 0.5~3h.
9. the preparation method according to any one of claim 6-8, it is characterised in that：Above-mentioned steps 5) in, by backflow
Soldering method carries out the welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710092255.9A CN106678563A (en) | 2017-02-21 | 2017-02-21 | Photo-thermal integration type LED lighting lamp and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710092255.9A CN106678563A (en) | 2017-02-21 | 2017-02-21 | Photo-thermal integration type LED lighting lamp and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN106678563A true CN106678563A (en) | 2017-05-17 |
Family
ID=58861149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710092255.9A Pending CN106678563A (en) | 2017-02-21 | 2017-02-21 | Photo-thermal integration type LED lighting lamp and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108177776A (en) * | 2018-02-12 | 2018-06-19 | 中国人民大学 | A kind of great power LED searchlighting unmanned plane and preparation method thereof |
| CN109192722A (en) * | 2018-08-07 | 2019-01-11 | 东莞中之光电股份有限公司 | A kind of LED flip chip packaging technology |
| CN110139435A (en) * | 2019-05-31 | 2019-08-16 | 上海应用技术大学 | A kind of intelligent control video display make scape atmosphere lamp |
| CN110364610A (en) * | 2019-06-20 | 2019-10-22 | 昆山芯乐光光电科技有限公司 | A kind of Ceramic Luminescence face CSP LED packaging technology |
| CN112266783A (en) * | 2020-10-30 | 2021-01-26 | 杭州数通光电有限公司 | Fluorescent colloid, high-luminous-efficiency light source and manufacturing method of high-luminous-efficiency light source |
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