CN104037314A - Stage light flip-chip chip-on-board (COB) light source and production process thereof - Google Patents
Stage light flip-chip chip-on-board (COB) light source and production process thereof Download PDFInfo
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- CN104037314A CN104037314A CN201410214380.9A CN201410214380A CN104037314A CN 104037314 A CN104037314 A CN 104037314A CN 201410214380 A CN201410214380 A CN 201410214380A CN 104037314 A CN104037314 A CN 104037314A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000000919 ceramic Substances 0.000 claims abstract description 49
- 230000005496 eutectics Effects 0.000 claims abstract description 49
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000003292 glue Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000005476 soldering Methods 0.000 claims abstract description 17
- 239000005304 optical glass Substances 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 8
- 238000002834 transmittance Methods 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 235000007466 Corylus avellana Nutrition 0.000 claims description 30
- 240000007582 Corylus avellana Species 0.000 claims description 30
- 238000005516 engineering process Methods 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 13
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 12
- -1 gold-tin Chemical compound 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 14
- 230000004907 flux Effects 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 239000010949 copper Substances 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 abstract 3
- 230000000903 blocking Effects 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 244000247747 Coptis groenlandica Species 0.000 description 8
- 235000002991 Coptis groenlandica Nutrition 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000005619 thermoelectricity Effects 0.000 description 6
- 239000004568 cement Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000032683 aging Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive Effects 0.000 description 3
- 238000009795 derivation Methods 0.000 description 3
- 230000001681 protective Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 102200017097 GLRX G10A Human genes 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000630 rising Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
Abstract
The invention discloses a stage light flip-chip chip-on-board (COB) light source and a production process thereof. The production process of the stage light flip-chip chip-on-board light source includes the following steps that: a flip chip is arranged on a die bonding area of an aluminum nitride ceramic support in a flip manner through adopting an eutectic furnace, so that an eutectic process can be completed, and an eutectic support can be formed; ultrasonic cleaning is performed on the eutectic support which has been subjected to the eutectic process; primary baking, enclosure glue enclosing, secondary baking and cooling are sequentially performed on the cleaned eutectic support; the enclosure glue forms a blocking wall structure along an enclosing dam around the die bonding area; the flip chip on the eutectic support is evenly coated with fluorescent powder glue, and baking is performed, and then, a chip encapsulation block can be formed; the chip encapsulation block is connected into a sink stage of a pure copper substrate through reflow soldering; and optical glass with high light transmittance and low reflectivity is bonded at a position right above the chip encapsulation block. The stage light flip-chip chip-on-board light source and the production process thereof of the invention have the advantages of excellent thermoelectric separation effect, firm combination and little possibility of falling off of the chip, high luminous flux, excellent lighting effect, advanced production techniques, high production efficiency and the like.
Description
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Technical field
The present invention relates to a kind of production technology of COB light source, relate in particular to a kind of stage lighting and cover brilliant COB light source and production technology thereof.
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Background technology
At present, COB light source product is on the market direct die bond on aluminium base mostly, and fraction is direct die bond on copper base and ceramic substrate; The material that die bond is used is insulating cement and elargol, and its thermal resistance is generally at 12 ℃/W, and thermal resistance is relatively high; In addition, COB light source product is on the market all to adopt bonding wire craft, and the COB light source that adopts bonding wire craft to make can not bear larger pulse current, more can not under the driving of large electric current, work long hours; Because pulse current is excessive or long-time large electric current (1000mA) work can cause product gold thread and chip P-N knot all can be greatly affected, easily cause the problems such as the dead lamp of broken string and junction temperature of chip rising; And COB light source product is on the market all to adopt the mode of enclosure wall glue to carry out a fluorescent glue operation, and the easy expanded by heating of colloid during light source works, causes gold thread to break and the dead lamp problem that breaks.Therefore, sum up, it there is following defect in existing COB light source product: elargol or insulating cement die bond in structure or production technology, not only make chip occur obscission because of environmental impact, but also the inconsistent problem of the thermal coefficient of expansion that has chip, elargol and support, the problem of adhesion and use the problems such as wiring is loaded down with trivial details between elargol and chip and support.
Summary of the invention
For the weak point existing in above-mentioned technology, the invention provides a kind of thermoelectricity good separating effect, the firm difficult drop-off of chips incorporate, production technology advanced person and the high stage lighting of production efficiency and cover brilliant COB light source and production technology thereof.
For achieving the above object, the invention provides the production technology that a kind of stage lighting covers brilliant COB light source, comprise following technological process:
Step 1, adopts eutectic furnace that flip-chip is covered brilliant on the crystal bonding area of aluminium nitride ceramics support, completes eutectic technology and forms eutectic support;
Step 2, carries out Ultrasonic Cleaning to completing the eutectic support of eutectic technology;
Step 3, toasts-encloses the baking-cooling operations of enclosure wall glue-again successively for the first time to the eutectic support having cleaned; And described enclosure wall glue is along surrounding's box dam of crystal bonding area and form barrier wall structure;
Step 4, is coated in phosphor gel uniformly on the flip-chip of eutectic support and carries out forming chip package piece after baking process;
Step 5, chip package piece is connected in the heavy stand of red metal substrate by the mode of reflow soldering;
Step 7, by the optical glass sheet of the low anti-rate of high light transmittance be pasted on chip package piece directly over.
Wherein, before described step 1, also comprise a step 0, described step 0 is for all to carry out gold-plated processing to the crystal bonding area of aluminium nitride ceramics support and pin place.
Wherein, also comprise a step 6 between described step 5 and step 7, described step 6 is for being all welded on thermistor, large plug-in unit, little plug-in unit and wire jumper in region fixing on red metal substrate by the mode of reflow soldering.
Wherein, the concrete steps of described step 1 are:
Step 11, in the bottom of flip-chip, plating has gold-tin alloy;
Step 12, on flip-chip, plating has the one side of gold-tin alloy by scaling powder, to stick on the crystal bonding area of aluminium nitride ceramics support;
Step 13 is covered flip-chip brilliant on this crystal bonding area under the protection of nitrogen atmosphere by eutectic furnace.
Wherein, in described step 3, the condition of first baking is 100 ℃ of temperature, time 30min; The condition of baking is 150 ℃ of temperature again, time 1h; In described step 4, the concrete steps of baking process are 50 ℃ of advanced trip temperatures, the baking of time 2h; Carry out again 65 ℃ of temperature, the baking of time 1h; Finally carry out 150 ℃ of temperature, the baking of time 2h.
For achieving the above object, the present invention also provides a kind of stage lighting to cover brilliant COB light source, comprises flip-chip, aluminium nitride ceramics support and red metal substrate; Described aluminium nitride ceramics support is provided with crystal bonding area, and forms barrier wall structure after the surrounding of described crystal bonding area box dam enclosure wall glue, and described flip-chip covers the brilliant eutectic support that forms behind the crystal bonding area of aluminium nitride ceramics support; After evenly applying phosphor gel on the flip-chip of described eutectic support, form chip package piece; On described red metal substrate, be embedded with a heavy stand, described chip package piece is connected in the heavy stand of red metal substrate by the mode of reflow soldering, and described chip package piece directly over be pasted with the optical glass sheet of the low anti-rate of a high light transmittance.
Wherein, the dual-side of described aluminium nitride ceramics support is all outward extended with pin, and two inner sides of described heavy stand are all embedded with the holding tank suitable with pin.
Wherein, on the crystal bonding area of described aluminium nitride ceramics support and pin, all plating has Gold plated Layer.
Wherein, described light source also comprises thermistor, large plug-in unit, little plug-in unit and wire jumper, and described thermistor, large plug-in unit, little plug-in unit and wire jumper are all welded on red metal substrate by the mode of reflow soldering.
Wherein, the bottom plating of described flip-chip has gold-tin alloy layer, and described gold-tin alloy layer sticks on the crystal bonding area of aluminium nitride ceramics support by scaling powder, and this flip-chip covers brilliant to the crystal bonding area of aluminium nitride ceramics support by eutectic furnace.
Compared with prior art, stage lighting pottery COB light source provided by the invention and production technology thereof, have following beneficial effect:
1) flip-chip covers crystalline substance to aluminium nitride ceramics support by eutectic furnace, makes the combination of flip-chip and support very firm, and adhesion is very good; Also can avoid in elargol die bond process the inhomogeneous loss that causes luminous flux because of elargol amount;
2) adopt eutectic furnace that flip-chip is covered brilliant on the crystal bonding area of aluminium nitride ceramics support, this technique is used flip-chip and in conjunction with eutectic technology, not only can substitute old technique elargol or insulating cement die bond, chip can be because the phenomenon coming off appears in environmental impact, and thermal resistance can be reduced to 5 ℃/W; And weld without gold thread, can save a large amount of material costs and human resources, greatly simplified production process and improved production efficiency, and there is no the stress problem between gold thread and chip and fluorescent material, single chips also there will not be the dead lamp phenomenon of broken string under the driving of large electric current, efficiently solves the problem that light source can not bear long-term large driven current density work;
3) adopt aluminium nitride ceramics support to can be good at realizing thermoelectricity separating effect; And by reflow soldering, be connected between ceramics bracket and red metal substrate, flip-chip is lighted the derivation that the heat that produces in process can be good fast and is come, and has improved the difficult problem of heat radiation of product in the past, the useful life of greatly having improved product;
4) enclosure wall glue is along surrounding's box dam of crystal bonding area and form barrier wall structure, and this barrier wall structure not only has the effect of setting eutectic regions shape size, and can also protective core sheet and guarantee that phosphor gel does not overflow, to form the fluorescent adhesive layer of rule attractive in appearance.
5) directly over chip package piece, paste the optical glass sheet of the low anti-rate of high light transmittance, not only can protect the not contaminated glue face that can also completely cut off of glue face to contact with the direct of environment, slow down the aging of glue face, is greatly improved the useful life of product;
6) the present invention has thermoelectricity good separating effect, the firm difficult drop-off of chips incorporate, the high light efficiency of luminous flux is good, production technology is advanced and production efficiency high.
Accompanying drawing explanation
Fig. 1 is the production technological process that stage lighting of the present invention covers brilliant COB light source;
Fig. 2 is the structure chart that stage lighting of the present invention covers red metal substrate in brilliant COB light source;
Fig. 3 is the structure chart that stage lighting of the present invention covers aluminium nitride ceramics support in brilliant COB light source;
Fig. 4 is the structure chart that stage lighting of the present invention covers flip-chip in brilliant COB light source.
Main element symbol description is as follows:
10, flip-chip 11, aluminium nitride ceramics support
12, red metal substrate 13, enclosure wall glue
111, crystal bonding area 112, pin
121, heavy stand 122, holding tank
123, large plug-in unit 124, little plug-in unit
125, thermistor 126, through hole
Embodiment
In order more clearly to explain the present invention, below in conjunction with accompanying drawing, the present invention is further described.
Refer to Fig. 1, stage lighting of the present invention covers the production technology of brilliant COB light source, comprises following technological process:
Step S0, all carries out gold-plated processing to the crystal bonding area of aluminium nitride ceramics support and pin place, and corresponding circuit line is set on this support.
Step S1, adopts eutectic furnace that flip-chip is covered brilliant on the crystal bonding area of aluminium nitride ceramics support, completes eutectic technology and forms eutectic support; The concrete steps of step S1 are: first, in the bottom of flip-chip, plating has gold-tin alloy; Secondly, on flip-chip, plating has the one side of gold-tin alloy by scaling powder, to stick on the crystal bonding area of aluminium nitride ceramics support; Finally, by eutectic furnace, flip-chip is covered to crystalline substance under the protection of nitrogen atmosphere on this crystal bonding area.
Step S2, carries out Ultrasonic Cleaning to completing the eutectic support of eutectic technology; Ultrasonic Cleaning 3～5 minutes, its objective is scaling powder and other chemical substances of removing aluminium nitride ceramics rack surface.
Step S3, toasts-encloses the baking-cooling operations of enclosure wall glue-again successively for the first time to the eutectic support having cleaned; And enclosure wall glue is along surrounding's box dam of crystal bonding area and form barrier wall structure; In step S3, the condition of first baking is 100 ℃ of temperature, time 30min; The condition of baking is 150 ℃ of temperature again, time 1h, the cooling step S4 that enters again afterwards.
Step S4, is coated in phosphor gel uniformly on the flip-chip of eutectic support and carries out forming chip package piece after baking process; In step S4, the concrete steps of baking process are 50 ℃ of advanced trip temperatures, the baking of time 2h, then carry out 65 ℃ of temperature, the baking of time 1h, finally carries out 150 ℃ of temperature, the baking of time 2h.This phosphor gel is that G10A/B glue is mixed with fluorescent material, notes having blue light to expose in coating procedure.
Step S5, chip package piece is connected in the heavy stand of red metal substrate by the mode of reflow soldering; Adopt the mode of heavy stand, not only protect chip package blocks, and can increase the contact area of ceramics bracket and heat-radiating substrate, improve the heat dispersion of light source, also can greatly save raw material, alleviate the weight of product, make its small volume and less weight be easy to use.
Step S6, is all welded on thermistor, large plug-in unit, little plug-in unit and wire jumper in region fixing on red metal substrate by the mode of reflow soldering.
Step S7, by the optical glass sheet of the low anti-rate of high light transmittance be pasted on chip package piece directly over, not only can protect the not contaminated glue face that can also completely cut off of glue face to contact with the direct of environment, slow down the aging of glue face, is greatly improved the useful life of product.
Compared to the situation of prior art, stage lighting provided by the invention covers the production technology of brilliant COB light source, has following beneficial effect:
1) flip-chip covers crystalline substance to aluminium nitride ceramics support by eutectic furnace, makes the combination of flip-chip and support very firm, and adhesion is very good; Also can avoid in elargol die bond process the inhomogeneous loss that causes luminous flux because of elargol amount.
2) adopt eutectic furnace that flip-chip is covered brilliant on the crystal bonding area of aluminium nitride ceramics support, this technique is used flip-chip and in conjunction with eutectic technology, not only can substitute old technique elargol or insulating cement die bond, chip can be because the phenomenon coming off appears in environmental impact, and thermal resistance can be reduced to 5 ℃/W; And weld without gold thread, can save a large amount of material costs and human resources, greatly simplified production process and improved production efficiency, and there is no the stress problem between gold thread and chip and fluorescent material, single chips also there will not be the dead lamp phenomenon of broken string under the driving of large electric current, efficiently solves the problem that light source can not bear long-term large driven current density work.
3) adopt aluminium nitride ceramics support to can be good at realizing thermoelectricity separating effect; And by reflow soldering, be connected between ceramics bracket and red metal substrate, flip-chip is lighted the derivation that the heat that produces in process can be good fast and is come, and has improved the difficult problem of heat radiation of product in the past, the useful life of greatly having improved product.
4) enclosure wall glue is along surrounding's box dam of crystal bonding area and form barrier wall structure, and this barrier wall structure not only has the effect of setting eutectic regions shape size, and can also protective core sheet and guarantee that phosphor gel does not overflow, to form the fluorescent adhesive layer of rule attractive in appearance.
5) directly over chip package piece, paste optical glass sheet, not only can protect the not contaminated glue face that can also completely cut off of glue face to contact with the direct of environment, slow down the aging of glue face, is greatly improved the useful life of product.
6) thermal coefficient of expansion of aluminium nitride ceramics support and flip-chip is very approaching, can reduce the stress problem between chip and substrate, improve the reliability of product, and thermistor can be monitored to light source works temperature in real time.
7) this production technology is advanced, with high content of technology, production efficiency is high and the feature such as applicable production in enormous quantities.
Please further consult Fig. 2-4, stage lighting of the present invention covers brilliant COB light source, comprises flip-chip 10, aluminium nitride ceramics support 11 and red metal substrate 12; Aluminium nitride ceramics support 11 is provided with crystal bonding area 111, and surrounding's box dam enclosure wall glue 13 rear formation barrier wall structures of crystal bonding area 111, and flip-chip 10 covers brilliant in the crystal bonding area 111 of aluminium nitride ceramics support 11 rear formation eutectic support; After evenly applying phosphor gel (not shown) on the flip-chip 10 of eutectic support, form chip package piece; On red metal substrate 12, be embedded with a heavy stand 121, chip package piece is connected in the heavy stand 121 of red metal substrate 12 by the mode of reflow soldering, and chip package piece directly over be pasted with the optical glass sheet (not shown) of the low anti-rate of a high light transmittance.
Compared to the situation of prior art, stage lighting provided by the invention covers brilliant COB light source, has following beneficial effect:
1) flip-chip 10 covers crystalline substance to aluminium nitride ceramics support 11, makes flip-chip 10 very firm with the combination of support, and adhesion is very good; Also can avoid in elargol die bond process the inhomogeneous loss that causes luminous flux because of elargol amount; This structure is used flip-chip 10 and in conjunction with eutectic technology, not only can be substituted old technique elargol or insulating cement die bond, and chip can be because the phenomenon coming off appears in environmental impact, and thermal resistance can be reduced to 5 ℃/W; And weld without gold thread, can save a large amount of material costs and human resources, greatly simplified production process and improved production efficiency, and there is no the stress problem between gold thread and chip and fluorescent material, single chips also there will not be the dead lamp phenomenon of broken string under the driving of large electric current, efficiently solves the problem that light source can not bear long-term large driven current density work.
2) adopt aluminium nitride ceramics support 11 to can be good at realizing thermoelectricity separating effect; And by reflow soldering, be connected between ceramics bracket and red metal substrate 12, flip-chip 10 is lighted the derivation that the heat that produces in process can be good fast and is come, and has improved the difficult problem of heat radiation of product in the past, the useful life of greatly having improved product.
4) enclosure wall glue 13 box dams of the surrounding along crystal bonding area form barrier wall structure, this barrier wall structure not only has the effect of setting eutectic regions shape size, and can also protective core sheet and guarantee that phosphor gel does not overflow, to form the fluorescent adhesive layer of rule attractive in appearance.
5) directly over chip package piece, paste optical glass sheet, not only can protect the not contaminated glue face that can also completely cut off of glue face to contact with the direct of environment, slow down the aging of glue face, is greatly improved the useful life of product.
6) adopt the mode of heavy stand, not only protect chip package blocks, and can increase the contact area of ceramics bracket and heat-radiating substrate, improve the heat dispersion of light source, also can greatly save raw material, alleviate the weight of product, make its small volume and less weight be easy to use.
7) aluminium nitride ceramics support 11 is very approaching with the thermal coefficient of expansion of flip-chip 10, can reduce the stress problem between chip and substrate, improve the reliability of product, and thermistor can be monitored to light source works temperature in real time.
8) this structure has thermoelectricity good separating effect, the firm difficult drop-off of chips incorporate, the high light efficiency of luminous flux is good, production efficiency is high and the feature such as applicable production in enormous quantities.
In the present embodiment, the dual-side of aluminium nitride ceramics support 11 is all outward extended with pin 111, two inner sides of heavy stand 121 are all embedded with the holding tank 122 suitable with pin 112, and on the crystal bonding area 111 of aluminium nitride ceramics support 11 and pin 112 all plating have Gold plated Layer.This pin 112 comprises anodal pin and negative pole pin, and this pin 112 directly adopts the mode of reflow soldering to be fixed in holding tank 122, and this structure has not only facilitated location, and has improved bonding speed.
In the present embodiment, light source also comprises thermistor 125, large plug-in unit 123, little plug-in unit 124 and wire jumper (not shown), and thermistor 125, large plug-in unit 123, little plug-in unit 124 and wire jumper are all welded on red metal substrate 12 by the mode of reflow soldering.The bottom plating of flip-chip 10 has gold-tin alloy layer, and plating has the one side of gold-tin alloy layer to stick on the crystal bonding area 111 of aluminium nitride ceramics support 11 by scaling powder, and on red metal substrate 12, is provided with the through hole 126 that mounting screw is used.Flip-chip 10 be ten strings ten and matrix structures, certainly, be not limited to this mode, can also be nine strings nine and or the structure of other types, if the change to chip execution mode on flip-chip 10 all falls in the protection range of this case.
Disclosed is above only several specific embodiment of the present invention, but the present invention is not limited thereto, and the changes that any person skilled in the art can think of all should fall into protection scope of the present invention.
Claims (10)
1. stage lighting covers a production technology for brilliant COB light source, it is characterized in that, comprises following technological process:
Step 1, adopts eutectic furnace that flip-chip is covered brilliant on the crystal bonding area of aluminium nitride ceramics support, completes eutectic technology and forms eutectic support;
Step 2, carries out Ultrasonic Cleaning to completing the eutectic support of eutectic technology;
Step 3, toasts-encloses the baking-cooling operations of enclosure wall glue-again successively for the first time to the eutectic support having cleaned; And described enclosure wall glue is along surrounding's box dam of crystal bonding area and form barrier wall structure;
Step 4, is coated in phosphor gel uniformly on the flip-chip of eutectic support and carries out forming chip package piece after baking process;
Step 5, chip package piece is connected in the heavy stand of red metal substrate by the mode of reflow soldering;
Step 7, by the optical glass sheet of the low anti-rate of high light transmittance be pasted on chip package piece directly over.
2. stage lighting according to claim 1 covers brilliant COB light source and production technology thereof, it is characterized in that, before described step 1, also comprises a step 0, and described step 0 is for all to carry out gold-plated processing to the crystal bonding area of aluminium nitride ceramics support and pin place.
3. stage lighting according to claim 1 covers brilliant COB light source and production technology thereof, it is characterized in that, between described step 5 and step 7, also comprise a step 6, described step 6 is for being all welded on thermistor, large plug-in unit, little plug-in unit and wire jumper in region fixing on red metal substrate by the mode of reflow soldering.
4. stage lighting according to claim 2 covers brilliant COB light source and production technology thereof, it is characterized in that, the concrete steps of described step 1 are:
Step 11, in the bottom of flip-chip, plating has gold-tin alloy;
Step 12, on flip-chip, plating has the one side of gold-tin alloy by scaling powder, to stick on the crystal bonding area of aluminium nitride ceramics support;
Step 13 is covered flip-chip brilliant on this crystal bonding area under the protection of nitrogen atmosphere by eutectic furnace.
5. stage lighting according to claim 1 covers brilliant COB light source and production technology thereof, it is characterized in that, in described step 3, the condition of first baking is 100 ℃ of temperature, time 30min; The condition of baking is 150 ℃ of temperature again, time 1h; In described step 4, the concrete steps of baking process are 50 ℃ of advanced trip temperatures, the baking of time 2h; Carry out again 65 ℃ of temperature, the baking of time 1h; Finally carry out 150 ℃ of temperature, the baking of time 2h.
6. stage lighting covers a brilliant COB light source, it is characterized in that, comprises flip-chip, aluminium nitride ceramics support and red metal substrate; Described aluminium nitride ceramics support is provided with crystal bonding area, and forms barrier wall structure after the surrounding of described crystal bonding area box dam enclosure wall glue, and described flip-chip covers the brilliant eutectic support that forms behind the crystal bonding area of aluminium nitride ceramics support; After evenly applying phosphor gel on the flip-chip of described eutectic support, form chip package piece; On described red metal substrate, be embedded with a heavy stand, described chip package piece is connected in the heavy stand of red metal substrate by the mode of reflow soldering, and described chip package piece directly over be pasted with the optical glass sheet of the low anti-rate of a high light transmittance.
7. stage lighting according to claim 6 covers brilliant COB light source, it is characterized in that, the dual-side of described aluminium nitride ceramics support is all outward extended with pin, and two inner sides of described heavy stand are all embedded with the holding tank suitable with pin.
8. stage lighting according to claim 6 covers brilliant COB light source, it is characterized in that, on the crystal bonding area of described aluminium nitride ceramics support and pin, all plating has Gold plated Layer.
9. according to the stage lighting described in claim 6 or 7, cover brilliant COB light source, it is characterized in that, described light source also comprises thermistor, large plug-in unit, little plug-in unit and wire jumper, and described thermistor, large plug-in unit, little plug-in unit and wire jumper are all welded on red metal substrate by the mode of reflow soldering.
10. stage lighting according to claim 6 covers brilliant COB light source, it is characterized in that, the bottom plating of described flip-chip has gold-tin alloy layer, and described gold-tin alloy layer sticks on the crystal bonding area of aluminium nitride ceramics support by scaling powder, and this flip-chip covers brilliant to the crystal bonding area of aluminium nitride ceramics support by eutectic furnace.
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