CN100474646C - Packaging method for white light illuminating diode - Google Patents
Packaging method for white light illuminating diode Download PDFInfo
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- CN100474646C CN100474646C CNB2007100364008A CN200710036400A CN100474646C CN 100474646 C CN100474646 C CN 100474646C CN B2007100364008 A CNB2007100364008 A CN B2007100364008A CN 200710036400 A CN200710036400 A CN 200710036400A CN 100474646 C CN100474646 C CN 100474646C
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Abstract
This invention relates to a packaging method for white light LED including the following steps: dropping insulation glue in a reflection ring of a frame, placing prepared grains on a frame dropped with insulation glue, baking the fixed semiconductor grains to adhere them fixedly, leading two wires from the baked grains at the positive and negative, configuring fluorescent powder and taking out polydimethyl silicon ketone, fixing agent for packaging LED and fluorescent powder to be mixed fully, dropping the prepared mixed fluorescent powder in the frame reflection ring welded with wires then to be baked and solidified, preparing glue, filling the glue and baking it.
Description
[technical field]
The present invention relates to a kind of light emitter diode seal method, or rather, relate to a kind of method for packing of white light emitting diode.
[background technology]
Light-emitting diode is a kind of light emitting semiconductor device, is used as indicator light, display screen etc. widely.White light emitting diode be described as replace fluorescent lamps and incandescent lamp the 4th generation lighting source.Theoretical about 100000 hours of the life-span of light-emitting diode, but, from white light emitting diode product in the market, its life-span do not reach far away theoretical 100000 hours, generally in the time of 1000 hours, its light decay rate reaches more than 30%, thereby has shortened the life-span of white light emitting diode product to a great extent.
Encapsulating material is one of principal element that influences light decay of white light luminescent diode, and conventional at present light-emitting diode packaging material mainly comprises support, crystal-bonding adhesive, chip, fluorescent material, joins arogel etc.(1) support is to the influence of light decay of white light luminescent diode.The support of light-emitting diode mainly contains copper stent and retort stand.Copper stent heat conduction, conduct electricity very well.See also shown in Figure 1ly, this figure is under the kindred circumstances, the light decay experimental result of selecting for use copper stent and retort stand to encapsulate.Be not difficult to find out thus, light-emitting diode with the copper stent encapsulation is obviously slow than the light attenuation of light emitting diode of retort stand encapsulation, when the 8th week, differ about 10%, this mainly is because the heat conductivility of copper is more much better than iron, the conductive coefficient of copper is 398W/ (mK), and the conductive coefficient of iron has only about 50W/ (mK), only is the former 1/8.But the price of copper is higher, certainly will increase the cost of product, and has more significantly concerning the improvement of light decay only is relative iron and improve.(2) crystal-bonding adhesive is to the influence of light decay of white light luminescent diode.At present, the crystal-bonding adhesive of light-emitting diode mainly contains silver slurry and insulating cement etc.The two cuts both ways, and need take all factors into consideration when selecting for use.The thermal conductivity of silver slurry is good, can prolong the life-span of light-emitting diode, but the silver slurry is bigger to the absorptance of light, and it is a lot of to cause light efficiency to descend, under the similarity condition, with the silver slurry solid brilliant with the solid crystalline phase ratio of insulating cement, it is more that initial luminous flux can differ.For the blue chip of bipolar electrode, also very strict to the control of glue amount with the solid crystalline substance of silver slurry the time, otherwise cause short circuit easily.Use insulating cement, because poor thermal conductivity, the life-span of light-emitting diode is lower, and the control of some glue does not have the silver slurry so strict yet.See also shown in Figure 2ly, this figure is the light decay experimental result that adopts silver slurry and the solid brilliant white light emitting diode that encapsulates of insulating cement respectively.(3) fluorescent material is to the influence of light decay of white light luminescent diode.The approach that realizes white light emitting diode has multiple, at present the most generally, also the most ripe a kind of be by the fluorescent material of coating jaundice light on blue chip, make blue light become white light with yellow light mix.Fluorescent material mainly is the YAG yttrium aluminium garnet fluorescent powder.See also shown in Figure 3ly, this figure is the light decay curve with the white light emitting diode of two kinds of different fluorescent material encapsulation and blue light-emitting diode contrast.Compare with blue light-emitting diode, fluorescent material has the aging effect of white light emitting diode of quickening.(4) join the influence of arogel to light decay of white light luminescent diode.The super brightness white light emitting diode of conventional package is joined arogel and is generally adopted epoxy resin or traditional silica gel.As shown in Figure 4, this figure carries out the light decay result of experiment for joining powder with epoxy resin and traditional silica gel respectively.As can be seen, it is more a lot of than the length of epoxy numerical value to join life-span of white light emitting diode of powder with traditional silica gel.
But, above-mentioned various measures at present all do not have significantly to reduce the light decay of white light emitting diode basically, still fall short of the actual life of white light emitting diode, limited the application of white light emitting diode to a great extent at lighting field, therefore, a kind of new encapsulation technology of market in urgent need is to reduce the light decay of white light emitting diode significantly, effectively to promote the application of white light emitting diode at lighting field.
[summary of the invention]
Technical problem to be solved by this invention is to overcome above-mentioned defective, and a kind of method for packing of new white light emitting diode is provided, and the white light emitting diode by the encapsulation of this kind method for packing has advantages such as low light decay, long-life, high stability.
The present invention is achieved by the following technical solutions: a kind of method for packing of white light emitting diode comprises the steps:
Point glue is about to insulating cement and clicks and enters in the support reflector;
Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put;
Gu the baking of brilliant back, soon the semi-finished product of solid good crystal grain toast, and make crystal grain and support fix adhesion;
Bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity;
Join fluorescent material, promptly take out the poly dimethyl silicone in proportion, LED package is prepared with curing agent, fluorescent material, stirs then, and it is fully mixed;
Dot fluorescent powder is about to be clicked and entered successively in the support reflector that has welded gold thread with the composite that curing agent, fluorescent material allotment form by poly dimethyl silicone, LED package;
Toast behind the dot fluorescent powder, the support that is about to the good fluorescent material of point toasts, so that its curing; And
Join baking procedure behind glue, encapsulating, the encapsulating.
Described joining in the fluorescent material step, poly dimethyl silicone, LED package are 3:3:1 with the ratio of curing agent, fluorescent material.
In the baking procedure, baking temperature is at the 130-150 degree behind the described dot fluorescent powder.
In the baking procedure, stoving time was at 1-2 hour behind the described dot fluorescent powder.
Behind the step dot fluorescent powder, before the baking, also have one to vacuumize step behind the step dot fluorescent powder, promptly to carrying out vacuum defoamation with the composite that curing agent, fluorescent material allotment form by poly dimethyl silicone, LED package.
Described fluorescent material can be YAG yttrium aluminium garnet fluorescent powder, TAG terbium aluminium garnet fluorescent material, silicate fluorescent powder or sulphide fluorescent material.
Described LED package curing agent is the bronsted lowry acids and bases bronsted lowry of dibutyl tin dilaurate or the catalytic action that can play the silanol condensation reaction or the solubility organic salt of lead, cobalt, tin, iron and other metal.
Behind the step encapsulating, behind the step encapsulating, before the baking, also have one to vacuumize step.
Compared with prior art, the method for packing of white light emitting diode of the present invention is joined powder by poly dimethyl silicone and LED package with the composite that curing agent forms in proportion by adopting in joining the fluorescent material step, and to baking temperature, time is controlled, reduced the light decay rate of white light emitting diode widely, as when adopting standard 20mA current drives, the luminous flux of light-emitting diode has 4% rising in the time of 168 hours, during by 336 hours, still keep 4% climbing, during by 1000 hours, it optical attenuation still do not occur, and 3% rising is arranged, thereby has improved significantly the life-span of white light emitting diode.
[description of drawings]
Fig. 1 is under the kindred circumstances, the light decay of white light luminescent diode experimental result curve chart of selecting for use copper stent and retort stand to encapsulate.
Fig. 2 is under the kindred circumstances, adopts the light decay of white light luminescent diode experimental result curve chart of silver slurry and the solid brilliant encapsulation of insulating cement respectively.
Fig. 3 is under the kindred circumstances, with the white light emitting diode of two kinds of different fluorescent material encapsulation and the light decay curve chart of blue light-emitting diode contrast.
Fig. 4 is under the kindred circumstances, and the white light emitting diode of joining powder with epoxy resin and traditional silica gel carries out light decay result of experiment curve chart respectively.
Fig. 5 is the encapsulation flow chart of white light emitting diode method for packing of the present invention.
Fig. 6 is under the kindred circumstances, during employing standard 20mA current drives, disclosed employing poly dimethyl silicone and LED package encapsulate and adopt traditional silica gel encapsulation and adopt epoxy encapsulation to carry out light decay result of experiment curve chart with the curing agent composite.
Fig. 7 is under the kindred circumstances, during employing standard 40mA current drives, disclosed employing poly dimethyl silicone and LED package encapsulate and adopt traditional silica gel encapsulation and adopt epoxy encapsulation to carry out light decay result of experiment curve chart with the curing agent composite.
[embodiment]
White light emitting diode according to method for packing encapsulation of the present invention comprises support, LED crystal particle, joins arogel and fluorescent material, described LED crystal particle is fixed on the support, described fluorescent material with join arogel and allocate in proportion, the described arogel of joining is allocated in proportion with curing agent by poly dimethyl silicone and LED package and is formed.
See also shown in Figure 5ly, the encapsulation process of the white light emitting diode that is disclosed in the present embodiment is for comprising the steps:
Step 1: some glue is about to insulating cement and clicks and enters in the support reflector.
Step 2: Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put.
Step 3:, make crystal grain and support fix adhesion Gu the baking of brilliant back is about to the semi-finished product of solid good crystal grain and puts into the high temperature baking box and toast.
Step 4: bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity.
Step 5: join fluorescent material, promptly prepare with curing agent, carbonate fluorescent material in ratio (quality, down together) taking-up poly dimethyl silicone, the LED package of 3:3:1, stir then, it is fully mixed, mixing time is about 5 minutes.
Step 6: vacuumize, promptly to carrying out vacuum defoamation by poly dimethyl silicone, LED package with the composite that curing agent, the allotment of carbonate fluorescent material form, the pumpdown time is about 5-10 minute.
Step 7: dot fluorescent powder, be about to take out pouring in the syringe of point gum machine with the composite that curing agent, fluorescent material allotment form of vacuum by poly dimethyl silicone, LED package, after regulating the jelly amount, it is clicked and entered in the support reflector that has welded gold thread successively.
Step 8: toast behind the dot fluorescent powder, the support that is about to the good fluorescent material of point is put into the high temperature baking box and is toasted, so that its curing, temperature is at the 130-150 degree, and stoving time was at 1-2 hour.
Step 9: join glue, be about to the good A of preheating, B agent epoxy glue, be generally the 1:1 ratio and prepare, and stir, so that it fully mixes by certain.
Step 10: vacuumize, promptly the composite of preparing in the step 9 is carried out vacuum defoamation, the pumpdown time is about 5-10 minute.
Step 11: encapsulating, promptly utilize the encapsulating machine that glue is injected in die cavity or the support successively.
Step 12: toast behind the encapsulating, promptly carry out high-temperature baking, the adhesive curing that makes in the step 11 to be injected, baking temperature is 125 degree, time 8-10 hour.
Step 13: cut pin: promptly utilize diel, separately with its both positive and negative polarity.
Step 14: beam split, promptly utilize light splitting machine, classify according to relevant electrical parameters such as the voltage of product, brightness, colors.
In the present embodiment, it is the LED crystal particle of 455-465nm that described chip is selected the blue light emitting wavelength for use, crystal-bonding adhesive is with insulating cement (slurry can certainly mine for silver), it (can certainly be the YAG yttrium aluminium garnet fluorescent powder that fluorescent material adopts silicate fluorescent powder, TAG terbium aluminium garnet fluorescent material or sulphide fluorescent material etc.), LED support adopts retort stand (can certainly adopt copper stent), joining arogel then adopts by poly dimethyl silicone and LED package and (adopts dibutyl tin dilaurate in the present embodiment with curing agent, can certainly be the bronsted lowry acids and bases bronsted lowry or the lead that can play the catalytic action of silanol condensation reaction, cobalt, tin, the solubility organic salt of iron and other metal) allotment forms in proportion, in the present embodiment, the poly dimethyl silicone, LED package is 1:1 with the allotment ratio of curing agent, described viscosity of joining arogel is 3.8pa.s, viscosity before the described poly dimethyl silicone allotment is 5.7pa.s, viscosity before the described curing agent allotment is 3.2pa.s, described fluorescent material, the poly dimethyl silicone, LED package is 1:3:3 with the allotment ratio (quality) of curing agent.
In order to verify the light decay situation of the white light emitting diode that above-mentioned method for packing is packaged, the present invention has done a large amount of experiments.See also shown in Figure 6, this figure is under the kindred circumstances, during employing standard 20mA current drives, adopt poly dimethyl silicone and LED package to encapsulate and adopt the silica gel encapsulation and adopt epoxy encapsulation to carry out light decay result of experiment curve chart with the curing agent composite.From this figure we as can be seen, sequence number 1 is the product of traditional silica gel encapsulation, has only 1% light decay rate in the time of 168 hours, but during by 336 hours, 7% decay occurred, and in the time of 1000 hours, its light decay rate reaches 28%.Sequence number 2 is the product of epoxy encapsulation, and existing 8% light decay rate during by 336 hours, has decayed 16% in the time of 168 hours, and during by 1000 hours, its light decay rate reaches 54%, and is very serious.The product that employing poly dimethyl silicone that sequence number 3 discloses for the present invention and LED package encapsulate with the curing agent composite, its luminous flux has 4% rising in the time of 168 hours, during by 336 hours, still keep 4% climbing, during by 1000 hours, it optical attenuation still do not occur, still keeps rising 3%.
The light decay situation of the white light emitting diode that employing poly dimethyl silicone that discloses for further checking the present invention and LED package encapsulate with the curing agent composite, when the inventor adopts standard 40mA current drives again, its light decay situation a large amount of experiments have been carried out.See also shown in Figure 7, when this figure was employing standard 40mA current drives, disclosed employing poly dimethyl silicone and LED package encapsulated and adopt traditional silica gel encapsulation and adopt epoxy encapsulation to carry out light decay result of experiment curve chart with the curing agent composite.From this figure we as can be seen, sequence number 1 is the product of traditional silica gel encapsulation, occurs 42% light decay rate in the time of 168 hours, during by 504 hours, its light decay rate reaches 65%.Optical attenuation is very serious.Sequence number 2 is the product of epoxy encapsulation, occurs 41% light decay rate in the time of 168 hours, and during by 500 hours, its light decay rate reaches 79%, and optical attenuation is very serious.The product that employing poly dimethyl silicone that sequence number 3 discloses for the present invention and LED package encapsulate with the curing agent composite, its luminous flux has 3% rising in the time of 168 hours, during by 504 hours, still keeps 3% climbing, optical attenuation still do not occur.This shows that the product of epoxy resin or the traditional silica gel encapsulation more in the market of the white light emitting diode by the encapsulation of disclosed method for packing has very low light decay, the very long life-span.
Need to prove that above-mentioned kindred circumstances is meant: (1) each experiment is all carried out under same laboratory, same time period and environmental condition; (2) each test event all is 20 light-emitting diodes randomly drawing from some single tubes wherein, as the sample of test.
The present invention produces on the basis of a large amount of experiments, the inventor is through a series of experiment, the chip of a large amount of encapsulating materials and light-emitting diode is carried out matching test, the final composite of finding that use is formed with curing agent in proportion by poly dimethyl silicone and LED package is joined the powder encapsulation, can reduce the light decay rate of white light emitting diode widely, the life-span of improving white light emitting diode significantly.
More than describing is embodiments of the invention only, forgives and can understand, and under the prerequisite that does not depart from the present invention's design, to simple modification of the present invention and replacement, all should be included within the technical conceive of the present invention.
Claims (6)
1. the method for packing of a white light emitting diode comprises the steps:
Point glue is about to insulating cement and clicks and enters in the support reflector;
Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put;
Gu the baking of brilliant back, soon the semi-finished product of solid good crystal grain toast, and make crystal grain and support fix adhesion;
Bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity;
Join fluorescent material, promptly take out the poly dimethyl silicone in proportion, LED package is prepared with curing agent, fluorescent material, stirs then, and it is fully mixed; Wherein, poly dimethyl silicone, LED package are 3:3:1 with the ratio of curing agent, fluorescent material;
Dot fluorescent powder is about to be clicked and entered successively in the support reflector that has welded gold thread with the composite that curing agent, fluorescent material allotment form by poly dimethyl silicone, LED package;
Toast behind the dot fluorescent powder, behind the step dot fluorescent powder, before the baking, also have one to vacuumize step, promptly to carrying out vacuum defoamation with the composite that curing agent, fluorescent material allotment form by poly dimethyl silicone, LED package; The support that to put fluorescent material toasts then, so that its curing; And join baking procedure behind glue, encapsulating, the encapsulating.
2. the method for packing of white light emitting diode according to claim 1, it is characterized in that: in the baking procedure, baking temperature is at the 130-150 degree behind the described dot fluorescent powder.
3. the method for packing of white light emitting diode according to claim 1, it is characterized in that: in the baking procedure, stoving time was at 1-2 hour behind the described dot fluorescent powder.
4. the method for packing of white light emitting diode according to claim 1, it is characterized in that: described fluorescent material can be YAG yttrium aluminium garnet fluorescent powder, TAG terbium aluminium garnet fluorescent material, silicate fluorescent powder or sulphide fluorescent material.
5. as the method for packing of white light emitting diode as described in claim 1 or 4, it is characterized in that: described LED package curing agent is the solubility organic salt of the bronsted lowry acids and bases bronsted lowry of dibutyl tin dilaurate or the catalytic action that can play the silanol condensation reaction or lead, cobalt, tin, iron.
6. the method for packing of white light emitting diode according to claim 1 is characterized in that: before the baking, also have one to vacuumize step behind the step encapsulating, behind the step encapsulating.
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| CNB2007100364008A CN100474646C (en) | 2007-01-11 | 2007-01-11 | Packaging method for white light illuminating diode |
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| CNB2007100364008A CN100474646C (en) | 2007-01-11 | 2007-01-11 | Packaging method for white light illuminating diode |
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| CN100474646C true CN100474646C (en) | 2009-04-01 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101320775B (en) * | 2008-07-21 | 2012-05-23 | 晶能光电（江西）有限公司 | Encapsulation of silicon substrate LED |
| CN102637803A (en) * | 2012-04-11 | 2012-08-15 | 浙江金仕朗光电科技有限公司 | Production process of LED (Light-Emitting Diode) white light bead |
| CN108010908A (en) * | 2017-11-10 | 2018-05-08 | 江苏稳润光电科技有限公司 | One kind allows the comfortable white light led method for packing of people's sense organ |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2586251Y (en) * | 2002-12-04 | 2003-11-12 | 银河光电股份有限公司 | Packing structure of white light LED |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2586251Y (en) * | 2002-12-04 | 2003-11-12 | 银河光电股份有限公司 | Packing structure of white light LED |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320775B (en) * | 2008-07-21 | 2012-05-23 | 晶能光电（江西）有限公司 | Encapsulation of silicon substrate LED |
| CN102637803A (en) * | 2012-04-11 | 2012-08-15 | 浙江金仕朗光电科技有限公司 | Production process of LED (Light-Emitting Diode) white light bead |
| CN108010908A (en) * | 2017-11-10 | 2018-05-08 | 江苏稳润光电科技有限公司 | One kind allows the comfortable white light led method for packing of people's sense organ |
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| CN101068034A (en) | 2007-11-07 |
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