CN104078548A - Full-angle light-emitting LED white light source and manufacturing method thereof - Google Patents
Full-angle light-emitting LED white light source and manufacturing method thereof Download PDFInfo
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- CN104078548A CN104078548A CN201310106383.6A CN201310106383A CN104078548A CN 104078548 A CN104078548 A CN 104078548A CN 201310106383 A CN201310106383 A CN 201310106383A CN 104078548 A CN104078548 A CN 104078548A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000003292 glue Substances 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 29
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 238000004806 packaging method and process Methods 0.000 claims description 11
- 239000004033 plastic Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000004643 material aging Methods 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 238000004021 metal welding Methods 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a full-angle light-emitting LED white light source which comprises a transparent support, more than one blue-light LED chip, a metal welding wire and an electrode. The LED chip is arranged on the transparent support through die bond glue mixed with fluorescent powder, the metal welding wire is in serial connection or parallel connection with the LED chip, the LED chip is connected with a power supply through the electrode, and the LED chip is packed on the transparent support through fluorescent glue. In addition, the invention further discloses a manufacturing method for the full-angle light-emitting LED white light source. According to the white-light LED light source, the blue-light LED chip is bonded to the transparent support through the die bond glue mixed with the fluorescent powder and is packed through the fluorescent glue. Thus, the problem that a light-emitting angle of an ordinary LED packed light source is limited within 180 degrees is solved, and all-dimensional even light emitting of the white-light LED light source is achieved.
Description
Technical field
The present invention relates to a kind of white LED light source and manufacture method thereof, for general illumination light fixture, commercial lighting, as bulb lamp etc., belongs to field of semiconductor illumination.
Background technology
LED is as a kind of novel solid lighting source, there is the features such as volume is little, life-span length, good reliability, energy-saving and environmental protection, illumination, backlight and large scale display aspect are widely used in, the topmost implementation of current LED white light source is that blue-light LED chip adds fluorescent material, as bloom, rouge and powder, green powder etc., part blue light is absorbed by fluorescent material, excites and sends corresponding gold-tinted, ruddiness and green glow.Blue light, gold-tinted, the mixing of ruddiness and green glow, has just produced the visual white light of people.
The white LED light source of encapsulation at present, no matter be that point-source of light is as Top-LED, or area source is as polycrystalline integrated optical source, be COB, all adopt material opaque, good heat conductivity to do stent substrate, as copper, aluminium, aluminium oxide ceramics etc., derive from stent substrate rapidly to the heat energy that LED blue chip is produced in the time lighting, thereby effectively reduce the working temperature of chip, the junction temperature of chip is operated in the operating temperature range of demarcation, improve the life-span of chip.Just because of the utilization of this stent substrate, cause LED bright dipping within the scope of 180 °, its light distribution becomes 120 ° of shapes of lambert's that.
The shortcoming that packaged LED white light source exists at present:
1) one side is luminous, and lighting angle is less than 180 °, as the application for bulb lamp, the Nei You dark space, space of 360 °.
2) if adopt secondary optical design to make divergence of beam, in the process at expansion lamp luminescence angle, can reduce the light extraction efficiency of light source, be unfavorable for energy-conservation.
Summary of the invention
The problem existing for prior art, the object of the present invention is to provide emitting led white light source of a kind of full angle and preparation method thereof, and the Omnibearing even of having realized white LED light source is luminous.
The emitting led white light source of a kind of full angle of the present invention comprises:
Transparent rack;
Blue-light LED chip, this LED chip is more than a slice, and is arranged on described transparent rack by being mixed with the crystal-bonding adhesive of fluorescent material;
Metal bonding wire, for connecting described LED chip or be connected in parallel;
Electrode, for being connected described LED chip with power supply;
Wherein, described LED chip is encapsulated on described transparent rack by fluorescent glue.
Preferably, described metal bonding wire or electrode are arranged on transparent rack by insulating barrier.
Preferably, described crystal-bonding adhesive is transparent resin material or silica gel, and crystal-bonding adhesive thickness is 4～20 μ m.
Preferably, described LED chip is the transparent LED chip of back side no-reflection rete.
Preferably, described fluorescent glue is mixed by fluorescent material and packaging plastic, and wherein the mixed proportion of fluorescent material and packaging plastic is 1:0.05～0.5, and the thickness of fluorescent glue is 0.1～2.0mm.
Preferably, described packaging plastic is silica gel or epoxy resin.
Preferably, described fluorescent material is LED with one or more the mixture in red, orange, yellow and green emitting phosphor.
The manufacture method of the emitting led white light source of a kind of full angle of the present invention, comprises the steps:
1) take crystal-bonding adhesive and fluorescent material, the two is mixed, with it, LED blue chip is fixed on transparent rack, put into baking oven baking-curing, taking-up, cooling stand-by;
2) the LED blue chip in the material of step 1) gained is accessed to the stent electrode above insulating barrier after the welding serial or parallel connection by metal wire;
3) weigh phosphor powder and packaging plastic, mixes the two to obtain fluorescent glue, is evenly coated on the support of intrinsic chip, puts into baking oven heating it is solidified, and takes out, cooling;
4) by the module place in circuit of step 3) gained, obtain full angle white LED light source.
The LED white light source advantage that the present invention makes:
1, the white LED light source that adopts the present invention to make, by the crystal-bonding adhesive that is mixed with fluorescent material, blue-light LED chip is bonded on transparent rack, and encapsulate by fluorescent glue, like this, be confined to the problem within 180 ° with regard to having overcome common LED packaged light source lighting angle, the Omnibearing even of having realized white LED light source is luminous;
2,, without 360 ° of secondary optical designs, improved the utilance of light.
Brief description of the drawings
Fig. 1 is the structural representation of white LED light source of the present invention;
Fig. 2 is fluorescent material crystal-bonding adhesive partial schematic diagram.
Embodiment
As shown in Figure 1, 2, implementation of the present invention: the transparent crystal-bonding adhesive 3 that transparent chips 4 use has been mixed to fluorescent material coheres on transparent rack 1, between chip and between chip and electrode 2, connect by metal bonding wire 6, transparent chips 4 covers the packaging plastic 5 that is mixed with fluorescent material above.
The selected package support material of the present invention is transparent material, including, but not limited to transparent alumina ceramics, and aluminium nitride ceramics, silica, glass or resin, shape can be circle, square or other geometries.
The selected transparent chips 4 of the present invention is transparent blue-light LED chip, is one or many, adopts the mode of serial or parallel connection that transparent chips 4 is connected with metal bonding wire 6; And be connected with the electrode on transparent rack 1.
The selected crystal-bonding adhesive 3 of the present invention is transparent resin or silica gel material, and light transmission is good, mixed fluorescent powder therein, preferably the mixed proportion of crystal-bonding adhesive and fluorescent material is 1:(0.05～0.5), crystal-bonding adhesive thickness is 2～15 μ m.
The selected packaging plastic of the present invention is transparent silica gel or the epoxy resin of light transmission, good stability, and mixes with fluorescent material.
The selected fluorescent material of the present invention is one or more mixture in the rouge and powder that can be excited by blue-ray LED, orange powder, bloom and green powder, and preferred particulates is 3～8 μ m;
In addition, the manufacture method of white LED light source of the present invention, step is as follows: 1, take transparent crystal-bonding adhesive and fluorescent material, the two is mixed, with it, transparent blue-light LED chip is fixed on transparent rack 1, put into baking oven baking-curing; 2, the transparent blue-light LED chip in step 1 resulting materials is welded by metal bonding wire 6, after serial or parallel connection, access the electrode 2 above support insulating barrier; 3, weigh phosphor powder and packaging plastic, mixes the two, is evenly coated on the support of intrinsic transparent chips, puts into baking oven heating it is solidified; 4,, by the module place in circuit of step 3 gained, obtain full angle LED white light source.
The white LED light source advantage that the present invention makes: the white LED light source that 1, adopts the present invention to make, by the crystal-bonding adhesive that is mixed with fluorescent material, blue-light LED chip is bonded on transparent rack, and encapsulate by fluorescent glue, like this, be confined to the problem within 180 ° with regard to having overcome common LED packaged light source lighting angle, the Omnibearing even of having realized white LED light source is luminous; 2,, without 360 ° of secondary optical designs, improved the utilance of light.
Claims (8)
1. the emitting led white light source of full angle, is characterized in that, comprising:
Transparent rack;
Blue-light LED chip, this LED chip is more than a slice, and is arranged on described transparent rack by being mixed with the crystal-bonding adhesive of fluorescent material;
Metal bonding wire, for connecting described LED chip or be connected in parallel;
Electrode, for being connected described LED chip with power supply;
Wherein, described LED chip is encapsulated on described transparent rack by fluorescent glue.
2. light source as claimed in claim 1, is characterized in that, described metal bonding wire or electrode are arranged on transparent rack by insulating barrier.
3. light source as claimed in claim 1, is characterized in that, described crystal-bonding adhesive is transparent resin material or silica gel, and crystal-bonding adhesive thickness is 4～20 μ m.
4. light source as claimed in claim 1, is characterized in that, described LED chip is the transparent LED chip of back side no-reflection rete.
5. light source as claimed in claim 1, is characterized in that, described fluorescent glue is mixed by fluorescent material and packaging plastic, and wherein the mixed proportion of fluorescent material and packaging plastic is 1:0.05～0.5, and the thickness of fluorescent glue is 0.1～2.0mm.
6. light source as claimed in claim 4, is characterized in that, described packaging plastic is silica gel or epoxy resin.
7. the light source as described in as arbitrary in claim 1 to 6 described in, is characterized in that, fluorescent material is LED with one or more the mixture in red, orange, yellow and green emitting phosphor.
8. a manufacture method for the emitting led white light source of full angle, is characterized in that, comprises the steps:
1) take crystal-bonding adhesive and fluorescent material, the two is mixed, with it, LED blue chip is fixed on transparent rack, put into baking oven baking-curing, taking-up, cooling stand-by;
2) the LED blue chip in the material of step 1) gained is accessed to the stent electrode above insulating barrier after the welding serial or parallel connection by metal wire;
3) weigh phosphor powder and packaging plastic, mixes the two to obtain fluorescent glue, is evenly coated on the support of intrinsic chip, puts into baking oven heating it is solidified, and takes out, cooling;
4) by the module place in circuit of step 3) gained, obtain full angle white LED light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310106383.6A CN104078548A (en) | 2013-03-29 | 2013-03-29 | Full-angle light-emitting LED white light source and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310106383.6A CN104078548A (en) | 2013-03-29 | 2013-03-29 | Full-angle light-emitting LED white light source and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN104078548A true CN104078548A (en) | 2014-10-01 |
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| CN201310106383.6A Pending CN104078548A (en) | 2013-03-29 | 2013-03-29 | Full-angle light-emitting LED white light source and manufacturing method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104518069A (en) * | 2014-11-14 | 2015-04-15 | 浙江英特来光电科技有限公司 | Die bond type LED (light emitting diode) lamp filament with red fluorescent glue |
| CN104681548A (en) * | 2015-03-03 | 2015-06-03 | 杭州士兰明芯科技有限公司 | LED luminous structure and manufacture method thereof |
| CN106257666A (en) * | 2015-06-19 | 2016-12-28 | 嘉兴山蒲照明电器有限公司 | LEDbulb lamp |
| CN106287339A (en) * | 2015-06-10 | 2017-01-04 | 嘉兴山蒲照明电器有限公司 | LEDbulb lamp |
| CN109742216A (en) * | 2019-01-15 | 2019-05-10 | 徐煜 | A kind of no dead angle shines and the led lighting source production method of single side encapsulation |
| CN110416382A (en) * | 2015-07-21 | 2019-11-05 | 福建天电光电有限公司 | The packaging method of LED light source |
| CN114279349A (en) * | 2021-12-31 | 2022-04-05 | 深圳电通纬创微电子股份有限公司 | Method for measuring thickness of integrated circuit die bonding glue |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104518069A (en) * | 2014-11-14 | 2015-04-15 | 浙江英特来光电科技有限公司 | Die bond type LED (light emitting diode) lamp filament with red fluorescent glue |
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| CN104681548A (en) * | 2015-03-03 | 2015-06-03 | 杭州士兰明芯科技有限公司 | LED luminous structure and manufacture method thereof |
| CN104681548B (en) * | 2015-03-03 | 2017-10-27 | 杭州士兰明芯科技有限公司 | A kind of LED ray structures and preparation method thereof |
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| CN110416382A (en) * | 2015-07-21 | 2019-11-05 | 福建天电光电有限公司 | The packaging method of LED light source |
| CN110416382B (en) * | 2015-07-21 | 2023-03-31 | 福建天电光电有限公司 | Packaging method of LED light source |
| CN109742216A (en) * | 2019-01-15 | 2019-05-10 | 徐煜 | A kind of no dead angle shines and the led lighting source production method of single side encapsulation |
| CN114279349A (en) * | 2021-12-31 | 2022-04-05 | 深圳电通纬创微电子股份有限公司 | Method for measuring thickness of integrated circuit die bonding glue |
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Application publication date: 20141001 |