CN203746897U

CN203746897U - Led

Info

Publication number: CN203746897U
Application number: CN201420051704.7U
Authority: CN
Inventors: 裴小明; 曹宇星
Original assignee: SHANGHAI RUIFENG OPTOELECTRONICS Co Ltd
Current assignee: Shenzhen Refond Optoelectronics Co Ltd
Priority date: 2014-01-26
Filing date: 2014-01-26
Publication date: 2014-07-30
Anticipated expiration: 2024-01-26

Abstract

The utility model provides an LED suitable for the field of LED packaging technology. The LED comprises a transparent cover casing, an LED chip and conductors, wherein the conductors are welded to electrodes of the LED chip, the transparent cover casing includes a recess hole, the bottom surface of the recess hole is provided with two conducting layers which are electrically isolated, the conducting layers extend to the bottom surface of the transparent cover casing via the side surface of the recess hole, and the conductors are fixedly arranged in the transparent cover casing via the conducting layers in the recess holes. Thus, the LED can be directly welded on a substrate at the application end via the conducting layers at the bottom surface of the transparent cover casing, so that the thermal resistance of a support layer which is required by normal packaging is reduced, a PN node of the chip is used for heat radiation, and the reliability of the LED is enhanced.

Description

A kind of LED

Technical field

The utility model belongs to LED encapsulation technology field, relates in particular to a kind of LED.

Background technology

At present, the packaged type of white light LEDs product is that the mode of LED wafer is bonding by crystal-bonding adhesive or eutectic welding is fixed on support, adopt gold thread the positive pole of wafer to be connected in to the positive pole of support, the negative pole of wafer is connected in the negative pole of support, recharges the fluorescent material that meets aim colour district.Due to support, the thermal coefficient of expansion of wafer colloid is different, at support, and crystal-bonding adhesive, gold thread, easily there is integrity problem in the aspects such as colloid.And LED support is of a great variety, the material of bonding support both positive and negative polarity is PPA, PCT, and EMC material, in heat-resisting quantity, air-tightness all has larger defect, and affects LED product reliability; Ceramics bracket has good heat-resisting quantity and good air-tightness, but support cost approaches wafer cost, and ceramics bracket packaged LED system take costliness, and equipment investment is large, and production capacity is little.In a word, the LED illuminating product of support encapsulated structure is in reliability, and useful life, larger obstruction was brought to the alternative traditional lighting of LED illuminating product in aspect.

Utility model content

The object of the utility model embodiment is to provide a kind of LED being directly welded on application end substrate, has deducted like this thermal resistance of the required shelf layer of conventional encapsulation, is beneficial to the heat radiation of wafer PN junction, strengthens LED product reliability.

The utility model embodiment realizes like this, a kind of LED, comprise transparent casing, LED wafer and the electric conductor that is welded in the electrode of described LED wafer, described transparent casing has depression, the conductive layer of two electricity isolation is established in the bottom surface of described depression, described conductive layer is extended down to the bottom surface of transparent casing through the side of depression, described electric conductor is fixedly arranged on transparent casing via conductive layer.

The utility model embodiment is prior to the electrode welding electric conductor of LED wafer, then via this electric conductor, LED wafer is fixedly arranged in the depression of transparent base, the conductive layer that is extended down to transparent base bottom surface is established in the bottom surface of described depression, and described electric conductor is fixedly arranged on the conductive layer in depression.Can by the conductive layer of transparent base bottom surface, be directly welded on application end substrate like this, deduct the thermal resistance of the required shelf layer of conventional encapsulation, be beneficial to the heat radiation of wafer PN junction, strengthen LED product reliability.

Accompanying drawing explanation

Fig. 1 is the realization flow figure of the LED methods for wafer-level packaging that provides of the utility model embodiment;

Fig. 2 is the structural representation (upper surface is plane) of the transparent base that provides of the utility model embodiment;

Fig. 3 is the structural representation (upper surface is cambered surface) of the transparent base that provides of the utility model embodiment;

Fig. 4 is the structural representation (surface is through roughening treatment) of the transparent base that provides of the utility model embodiment;

Fig. 5 is the LED wafer-class encapsulation process schematic diagram (not filling transparent silica gel or fluorescent glue) that the utility model embodiment provides;

Fig. 6 is the structural representation (do not fill transparent silica gel or fluorescent glue, LED upper surface is plane) of the obtained LED of LED methods for wafer-level packaging that provides through the utility model embodiment;

Fig. 7 is the LED wafer-class encapsulation process schematic diagram (filling after transparent silica gel or fluorescent glue) that the utility model embodiment provides;

Fig. 8 is the structural representation (fill transparent silica gel or fluorescent glue, LED upper surface is plane) of the obtained LED of LED methods for wafer-level packaging that provides through the utility model embodiment;

Fig. 9 is the structural representation (fill transparent silica gel or fluorescent glue, LED upper surface is cambered surface) of the obtained LED of LED methods for wafer-level packaging that provides through the utility model embodiment;

Figure 10 is the structural representation (fill transparent silica gel or fluorescent glue, LED upper surface is through roughening treatment) of the obtained LED of LED methods for wafer-level packaging that provides through the utility model embodiment.

Embodiment

In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.

Fig. 1 shows the realization flow of the LED methods for wafer-level packaging that the utility model embodiment provides, and details are as follows.

In step S101, obtain the transparent base with depression, and make described depression opening up, the bottom surface of described depression is provided with the conductive layer of two electricity isolation, and described conductive layer is extended down to the bottom surface of transparent base through the side of depression.

The utility model embodiment first obtains the transparent base 2 with depression 1, and makes described depression 1 opening up, and described depression 1 bottom surface is provided with two conductive layers 3 of electricity isolation mutually, and described conductive layer is extended down to the bottom surface of transparent base 2 through depression 1 side.Wherein, described transparent base 2 is the solid-state high light transmittance material that ball bonding connects of planting, be preferably clear glass, pottery, sapphire or the carborundum with the depression 1 that a plurality of sizes are large compared with LED wafer 4, in described clear glass, pottery, sapphire or carborundum appropriate location, plate conductive layer 3, or first in whole transparent base bottom, plate conductive layer, then remove unwanted conductive layer.Described LED wafer 4 is packaged to be cut apart afterwards to clear glass, pottery, sapphire or carborundum, thereby obtains single led product, as shown in Fig. 2～4.It should be noted that described depression 1 is generally formed by the method (as etching) of physics or chemistry.Moreover the upper surface of described transparent base 2 may be molded to be beneficial to and promotes the cambered surface that light took out and reduced rising angle, as shown in Figure 3.In addition, also can to the middle part, bottom surface of the upper surface of described transparent base 2 and depression 1 thereof, carry out roughening treatment in advance, to promote light extraction efficiency and the uniformity that encapsulates the LED forming, as shown in Figure 4.

In step S102, the LED wafer with positive and negative electrode electric conductor is placed in to described depression, and makes described positive and negative electrode electric conductor be fixed in corresponding conductive layer.

The utility model embodiment is placed in each depression 1 of transparent base by the LED wafer 4 with positive and negative electrode electric conductor 6,7, and makes described positive and negative electrode electric conductor 6,7 be fixed in corresponding conductive layer 3.Wherein, described in, having the positive and negative electrode 8,9 that the LED wafer 4 of positive and negative electrode electric conductor 6,7 is welded in LED wafer 4 by gold goal forms; Described LED wafer 4 is through gold goal hot pressing in depression 1, and each gold goal is fixed on corresponding conductive layer 3 and forms and is electrically connected to, as shown in Figure 5,6.With gold goal welding, replace gold thread welding herein, greatly promoted the reliability that horizontal formal dress chip electrode is connected with packaging body positive and negative electrode.Wherein, described LED wafer 4 is preferably formal dress wafer, for example horizontal structure formal dress wafer.The LED12 obtaining is not like this containing fluorescent glue or transparent silica gel, and its glow color is LED wafer glow color, and made LED12 is lightweight, is suitable for the backlight of portable electronic products or/and illumination.

So realized especially horizontal structure formal dress wafer of LED wafer 4() without support integration packaging, by a large amount of integrated production, reduce the cost of LED product.Wherein, LED wafer 4 can be directly welded on application end substrate with transparent base 2, deducted the thermal resistance of conventional encapsulation medium-height trestle layer, the thermal conductance that has greatly shortened wafer PN junction goes out, promote the thermal reliability of LED product, effectively control the junction temperature of wafer PN junction, greatly promote efficiency and the useful life of LED device.

As another embodiment of the utility model, described the LED wafer 4 with positive and negative electrode electric conductor 6,7 is placed in to described depression 1, and the step that makes described positive and negative electrode electric conductor 6,7 be fixed in corresponding conductive layer 3 also comprises afterwards: in the interior filling transparent silica gel of described depression 1 or fluorescent glue 11, until described fluorescent glue 11 is concordant with the bottom surface of LED wafer 4, then solidify described transparent silica gel or fluorescent glue 11, as shown in Fig. 7～10.Because the space between LED wafer 3 and base material depression 1 is controlled uniform thickness space, in this space, fill described transparent silica gel or fluorescent glue 11, get final product to obtain the fluorescent adhesive layer of even thickness, blue-light excited by wafer, and then obtain uniform white light, maximally utilise the blue light that wafer sends, do not have the inhomogeneous low phenomenon of luminous flux causing that excites of blue light, finally obtain maximum luminous flux.

As shown in Fig. 8～10, the electric conductor 8,9 that the LED12 making through preceding method comprises transparent casing 13, LED wafer 4 and is welded in the electrode of described LED wafer 4, described transparent casing 13 has depression 1, the conductive layer 3 of two electricity isolation is established in the bottom surface of described depression 1, described conductive layer 3 is extended down to the bottom surface of transparent casing 13 through the side of depression 1, described electric conductor 8,9 is fixedly arranged on transparent casing 13 via the conductive layer in depression 1.Can be directly welded on application end substrate by the conductive layer of transparent casing 13 bottom surfaces like this, deducted the thermal resistance of the required shelf layer of conventional encapsulation, be beneficial to the heat radiation of wafer PN junction, strengthen LED product reliability.In other words, when application end is welded this LED, LED wafer 4 bottoms are directly welded in heat sink, shorten heat conduction approach, reduce thermal resistance, the double-end conductive layer of case is welded in wiring board counter electrode, packaging thermoelectricity is separated, the heat of improving product and electric reliability.

As preferably, in described depression 1, be installed with to enclose and cover the upper surface of LED wafer 4 and the transparent silica gel of side or fluorescent glue 11.So be beneficial to the described LED wafer 4 of protection, and make made LED luminous according to demand.Wherein, the size of described depression 1 is large compared with LED wafer 4, and described transparent casing 13 is clear glass, pottery, sapphire or carborundum, and described conductive layer 3 is plated on clear glass, pottery, sapphire or carborundum.

Electric conductor described in the utility model embodiment 8,9 is gold goal, and described LED wafer 4 is through gold goal hot pressing in depression 1, and described gold goal is fixedly arranged on corresponding conductive layer 3 and forms and is electrically connected to.Described LED wafer 4 is preferably horizontal structure formal dress wafer.In addition, middle part, the bottom surface of the upper surface of described transparent casing 13 and depression 1 is coarse surface, the light sending with homogenize LED.

The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.

Claims

1. a LED, it is characterized in that, comprise transparent casing, LED wafer and the electric conductor that is welded in the electrode of described LED wafer, described transparent casing has depression, the conductive layer of two electricity isolation is established in the bottom surface of described depression, described conductive layer is extended down to the bottom surface of transparent casing through the side of depression, described electric conductor is fixedly arranged on transparent casing via conductive layer.

2. LED as claimed in claim 1, is characterized in that, is installed with to enclose to cover the upper surface of LED wafer and the transparent silica gel of side or fluorescent glue in described depression.

3. LED as claimed in claim 1 or 2, is characterized in that, the size of described depression is large compared with LED wafer, and described transparent casing is clear glass, pottery, sapphire or carborundum, and described conductive layer is plated on clear glass, pottery, sapphire or carborundum.

4. LED as claimed in claim 3, is characterized in that, described electric conductor is gold goal, and described LED wafer is through gold goal hot pressing in depression, and described gold goal is fixedly arranged on corresponding conductive layer and forms and is electrically connected to.

5. LED as claimed in claim 4, is characterized in that, described LED wafer is formal dress wafer.

6. LED as claimed in claim 5, is characterized in that, the upper surface of described transparent casing and middle part, the bottom surface of depression are coarse surface.