CN103855280A - LED wafer-level packaging method - Google Patents
LED wafer-level packaging method Download PDFInfo
- Publication number
- CN103855280A CN103855280A CN201410038441.0A CN201410038441A CN103855280A CN 103855280 A CN103855280 A CN 103855280A CN 201410038441 A CN201410038441 A CN 201410038441A CN 103855280 A CN103855280 A CN 103855280A
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- Prior art keywords
- led
- wafer
- depression
- positive
- conductive layer
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 22
- 239000003292 glue Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000741 silica gel Substances 0.000 claims description 12
- 229910002027 silica gel Inorganic materials 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- -1 pottery Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 238000007788 roughening Methods 0.000 claims description 4
- 238000007731 hot pressing Methods 0.000 claims description 2
- 238000013517 stratification Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 25
- 239000000047 product Substances 0.000 description 13
- 238000005538 encapsulation Methods 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 4
- 241000218202 Coptis Species 0.000 description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED wafer-level packaging method suitable for the technical field of LED packaging. The method includes the following steps that a transparent base material with a cave is acquired, an opening of the cave is made upward, and two electrically-isolated conducting layers are arranged on the bottom face of the cave and extend to the bottom face of the base material through the lateral side of the cave; an LED wafer with a positive-electrode conductor and a negative-electrode conductor is placed into the cave, and the positive-electrode conductor and the negative-electrode conductor are fixedly connected to the corresponding conducting layers. In this way, a packaged LED can be directly welded to an application-end substrate, thermal resistors of support layers required for conventional packaging are not used, heat of a PN junction can be conveniently dissipated, and reliability of the LED is improved.
Description
Technical field
The invention belongs to LED encapsulation technology field, relate in particular to a kind of LED methods for wafer-level packaging.
Background technology
At present, the packaged type of white light LEDs product is that the mode of LED wafer is bonding by crystal-bonding adhesive or eutectic welding is fixed on support, adopt gold thread the positive pole of wafer to be connected in to the positive pole of support, the negative pole of wafer is connected in the negative pole of support, recharges the fluorescent material that meets aim colour district.Due to support, the thermal coefficient of expansion difference of wafer colloid, at support, crystal-bonding adhesive, gold thread, easily there is integrity problem in the aspects such as colloid.And LED support is of a great variety, the material of bonding support both positive and negative polarity is PPA, PCT, and EMC material, in heat-resisting quantity, air-tightness all has larger defect, and affects LED product reliability; Ceramics bracket has good heat-resisting quantity and good air-tightness, but support cost approaches wafer cost, and ceramics bracket packaged LED system take costliness, and equipment investment is large, and production capacity is little.In a word, the LED illuminating product of support encapsulated structure is in reliability, and useful life, larger obstruction was brought to the alternative traditional lighting of LED illuminating product in aspect.
Summary of the invention
The object of the embodiment of the present invention is to provide a kind of LED methods for wafer-level packaging, encapsulating through the method the LED forming can be directly welded on application end substrate, deduct the thermal resistance of the required shelf layer of conventional encapsulation, be beneficial to the heat radiation of wafer PN junction, strengthened LED product reliability.
The embodiment of the present invention is achieved in that a kind of LED methods for wafer-level packaging, comprises the following steps:
Obtain the transparent base with depression, and make described depression opening up, described depression bottom surface is provided with the conductive layer of two electricity isolation, and described conductive layer is extended down to the bottom surface of transparent base through depression side;
The LED wafer with positive and negative electrode electric conductor is placed in to described depression, and makes described positive and negative electrode electric conductor be fixed in corresponding conductive layer.
The embodiment of the present invention is first obtained the transparent base with depression, and makes described depression opening up, and described depression bottom surface is provided with the conductive layer of two electricity isolation, and described conductive layer is extended down to the bottom surface of transparent base through depression side; Then the LED wafer with positive and negative electrode electric conductor is placed in to described depression, and makes described positive and negative electrode electric conductor be fixed in corresponding conductive layer.The LED that so encapsulation forms can be directly welded on application end substrate, has deducted the thermal resistance of the required shelf layer of conventional encapsulation, is beneficial to the heat radiation of wafer PN junction, strengthens LED product reliability.
Accompanying drawing explanation
Fig. 1 is the realization flow figure of the LED methods for wafer-level packaging that provides of the embodiment of the present invention;
Fig. 2 is the structural representation (upper surface is plane) of the transparent base that provides of the embodiment of the present invention;
Fig. 3 is the structural representation (upper surface is cambered surface) of the transparent base that provides of the embodiment of the present invention;
Fig. 4 is the structural representation (surface is through roughening treatment) of the transparent base that provides of the embodiment of the present invention;
Fig. 5 is the LED wafer-class encapsulation process schematic diagram (not filling transparent silica gel or fluorescent glue) that the embodiment of the present invention provides;
Fig. 6 is the structural representation (do not fill transparent silica gel or fluorescent glue, LED upper surface is plane) of the obtained LED of LED methods for wafer-level packaging that provides through the embodiment of the present invention;
Fig. 7 is the LED wafer-class encapsulation process schematic diagram (filling after transparent silica gel or fluorescent glue) that the embodiment of the present invention provides;
Fig. 8 is the structural representation (fill transparent silica gel or fluorescent glue, LED upper surface is plane) of the obtained LED of LED methods for wafer-level packaging that provides through the embodiment of the present invention;
Fig. 9 is the structural representation (fill transparent silica gel or fluorescent glue, LED upper surface is cambered surface) of the obtained LED of LED methods for wafer-level packaging that provides through the embodiment of the present invention;
Figure 10 is the structural representation (fill transparent silica gel or fluorescent glue, LED upper surface is through roughening treatment) of the obtained LED of LED methods for wafer-level packaging that provides through the embodiment of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
The embodiment of the present invention is first obtained the transparent base with depression, and makes described depression opening up, and described depression bottom surface is provided with the conductive layer of two electricity isolation, and described conductive layer is extended down to the bottom surface of transparent base through depression side; Then the LED wafer with positive and negative electrode electric conductor is placed in to described depression, and makes described positive and negative electrode electric conductor be fixed in corresponding conductive layer.The LED that so encapsulation forms can be directly welded on application end substrate, has deducted the thermal resistance of the required shelf layer of conventional encapsulation, is beneficial to the heat radiation of wafer PN junction, strengthens LED product reliability.
Fig. 1 shows the realization flow of the LED methods for wafer-level packaging that the embodiment of the present invention provides, and details are as follows.
In step S101, obtain the transparent base with depression, and make described depression opening up, the bottom surface of described depression is provided with the conductive layer of two electricity isolation, and described conductive layer is extended down to the bottom surface of transparent base through the side of depression.
The embodiment of the present invention is first obtained the transparent base 2 with depression 1, and makes described depression 1 opening up, and described depression 1 bottom surface is provided with two conductive layers 3 of electricity isolation mutually, and described conductive layer is extended down to the bottom surface of transparent base 2 through depression 1 side.Wherein, described transparent base 2 is the solid-state high light transmittance material that ball bonding connects of planting, be preferably clear glass, pottery, sapphire or the carborundum with the depression 1 that multiple sizes are large compared with LED wafer 4, plate conductive layer 3 in described clear glass, pottery, sapphire or carborundum appropriate location, or first plate conductive layer in whole transparent base bottom, then remove unwanted conductive layer.Described LED wafer 4 is packaged to be cut apart afterwards to clear glass, pottery, sapphire or carborundum, thereby obtains single led product, as shown in Fig. 2～4.It should be noted that described depression 1 is generally formed by the method (as etching) of physics or chemistry.Moreover the upper surface of described transparent base 2 may be molded to and is beneficial to the cambered surface that promotes light taking-up and reduce rising angle, as shown in Figure 3.In addition, also roughening treatment is carried out at middle part, the bottom surface of the upper surface to described transparent base 2 and depression 1 thereof in advance, to promote the light extraction efficiency and the uniformity that encapsulate the LED forming, as shown in Figure 4.
In step S102, the LED wafer with positive and negative electrode electric conductor is placed in to described depression, and makes described positive and negative electrode electric conductor be fixed in corresponding conductive layer.
The LED wafer 4 with positive and negative electrode electric conductor 6,7 is placed in the each depression 1 of transparent base by the embodiment of the present invention, and make described positive and negative electrode electric conductor 6,7 be fixed in corresponding conductive layer 3.Wherein, described in, having the positive and negative electrode 8,9 that the LED wafer 4 of positive and negative electrode electric conductor 6,7 is welded in LED wafer 4 by gold goal forms; Described LED wafer 4 is through gold goal hot pressing in depression 1, and each gold goal is fixed on corresponding conductive layer 3 and forms electrical connection, as shown in Figure 5,6.Replace gold thread welding with gold goal welding herein, greatly promoted the reliability that horizontal formal dress chip electrode is connected with packaging body positive and negative electrode.Wherein, described LED wafer 4 is preferably needs the horizontal structure of bonding wire formal dress wafer or vertical stratification formal dress wafer.The LED12 obtaining is not like this containing fluorescent glue or transparent silica gel, and its glow color is LED wafer glow color, and made LED12 is lightweight, is suitable for the backlight of portable electronic products or/and illumination.
So realized especially horizontal structure formal dress wafer of LED wafer 4() without support integration packaging, by a large amount of integrated production, reduce the cost of LED product.Wherein, LED wafer 4 can be directly welded on application end substrate with transparent base 2, deduct the thermal resistance of conventional encapsulation medium-height trestle layer, the thermal conductance that has greatly shortened wafer PN junction goes out, promote the thermal reliability of LED product, effectively control the junction temperature of wafer PN junction, greatly promote efficiency and the useful life of LED device.In other words, weld this LED encapsulating products in application end, LED wafer 4 bottoms are directly welded in heat sink, shorten heat conduction approach, reduce thermal resistance, the double-end conductive layer of base material is welded in wiring board counter electrode, packaging thermoelectricity separates, the heat of improving product and electric reliability.
As another embodiment of the present invention, described the LED wafer 4 with positive and negative electrode electric conductor 6,7 is placed in to described depression 1, and the step that makes described positive and negative electrode electric conductor 6,7 be fixed in corresponding conductive layer 3 also comprises afterwards: in the interior filling transparent silica gel of described depression 1 or fluorescent glue 11, until described fluorescent glue 11 is concordant with the bottom surface of LED wafer 4, then solidify described transparent silica gel or fluorescent glue 11, as shown in Fig. 7～10.Because the space between LED wafer 3 and base material depression 1 is controlled uniform thickness space, in this space, fill described transparent silica gel or fluorescent glue 11, get final product to obtain the fluorescent adhesive layer of even thickness, blue-light excited by wafer, and then obtain uniform white light, maximally utilise the blue light that wafer sends, do not have the inhomogeneous low phenomenon of luminous flux causing that excites of blue light, finally obtain maximum luminous flux.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. a LED methods for wafer-level packaging, is characterized in that, said method comprising the steps of:
Obtain the transparent base with depression, and make described depression opening up, described depression bottom surface is provided with the conductive layer of two electricity isolation, and described conductive layer is extended down to the bottom surface of transparent base through depression side;
The LED wafer with positive and negative electrode electric conductor is placed in to described depression, and makes described positive and negative electrode electric conductor be fixed in corresponding conductive layer.
2. LED methods for wafer-level packaging as claimed in claim 1, is characterized in that, described the LED wafer with positive and negative electrode electric conductor is placed in to described depression, and described positive and negative electrode electric conductor is also comprised after being fixed in the step of corresponding conductive layer:
In described depression, fill transparent silica gel or fluorescent glue, until described fluorescent glue is concordant with the bottom surface of LED wafer, then solidify described transparent silica gel or fluorescent glue.
3. LED methods for wafer-level packaging as claimed in claim 1 or 2, it is characterized in that, described transparent base is clear glass, pottery, sapphire or the carborundum with the depression that multiple sizes are large compared with LED wafer, and described conductive layer is plated on clear glass, pottery, sapphire or carborundum; After described LED wafer package is good, clear glass, pottery, sapphire or carborundum are cut apart, thereby obtained single led.
4. LED methods for wafer-level packaging as claimed in claim 3, is characterized in that, described in there is the positive and negative electrode that the LED wafer of positive and negative electrode electric conductor is welded in LED wafer by gold goal and form; Described LED wafer is through gold goal hot pressing in depression, and described gold goal is fixed on corresponding conductive layer and forms electrical connection.
5. LED methods for wafer-level packaging as claimed in claim 4, is characterized in that, described LED wafer is horizontal structure or vertical stratification formal dress wafer.
6. LED methods for wafer-level packaging as claimed in claim 5, is characterized in that, roughening treatment is carried out at middle part, the bottom surface of the upper surface to described transparent base and depression thereof in advance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038441.0A CN103855280B (en) | 2014-01-26 | 2014-01-26 | A kind of LED wafer level packaging methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038441.0A CN103855280B (en) | 2014-01-26 | 2014-01-26 | A kind of LED wafer level packaging methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103855280A true CN103855280A (en) | 2014-06-11 |
| CN103855280B CN103855280B (en) | 2018-05-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410038441.0A Active CN103855280B (en) | 2014-01-26 | 2014-01-26 | A kind of LED wafer level packaging methods |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103855280B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015109574A1 (en) * | 2014-01-26 | 2015-07-30 | 上海瑞丰光电子有限公司 | Led wafer-level encapsulation method |
| CN114664195A (en) * | 2021-12-16 | 2022-06-24 | 深圳市万值科技有限公司 | LED transparent display and dynamic picture synchronous transmission display equipment and process |
| WO2022140980A1 (en) * | 2020-12-28 | 2022-07-07 | 华为技术有限公司 | Packaged chip and chip packaging method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3942245A (en) * | 1971-11-20 | 1976-03-09 | Ferranti Limited | Related to the manufacture of lead frames and the mounting of semiconductor devices thereon |
| US20020008325A1 (en) * | 2000-05-11 | 2002-01-24 | Mitutoyo Corporation | Functional device unit and method of producing the same |
| US20040173808A1 (en) * | 2003-03-07 | 2004-09-09 | Bor-Jen Wu | Flip-chip like light emitting device package |
| US20080035942A1 (en) * | 2006-08-08 | 2008-02-14 | Lg Electronics Inc. | Light emitting device package and method for manufacturing the same |
| JP2008205138A (en) * | 2007-02-20 | 2008-09-04 | Misuzu Kogyo:Kk | Electronic optical device mounted body, and electronic optical apparatus incorporating it therein |
| CN102738353A (en) * | 2011-04-12 | 2012-10-17 | 国碁电子(中山)有限公司 | Led packaging structure |
-
2014
- 2014-01-26 CN CN201410038441.0A patent/CN103855280B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3942245A (en) * | 1971-11-20 | 1976-03-09 | Ferranti Limited | Related to the manufacture of lead frames and the mounting of semiconductor devices thereon |
| US20020008325A1 (en) * | 2000-05-11 | 2002-01-24 | Mitutoyo Corporation | Functional device unit and method of producing the same |
| US20040173808A1 (en) * | 2003-03-07 | 2004-09-09 | Bor-Jen Wu | Flip-chip like light emitting device package |
| US20080035942A1 (en) * | 2006-08-08 | 2008-02-14 | Lg Electronics Inc. | Light emitting device package and method for manufacturing the same |
| JP2008205138A (en) * | 2007-02-20 | 2008-09-04 | Misuzu Kogyo:Kk | Electronic optical device mounted body, and electronic optical apparatus incorporating it therein |
| CN102738353A (en) * | 2011-04-12 | 2012-10-17 | 国碁电子(中山)有限公司 | Led packaging structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015109574A1 (en) * | 2014-01-26 | 2015-07-30 | 上海瑞丰光电子有限公司 | Led wafer-level encapsulation method |
| WO2022140980A1 (en) * | 2020-12-28 | 2022-07-07 | 华为技术有限公司 | Packaged chip and chip packaging method |
| CN114664195A (en) * | 2021-12-16 | 2022-06-24 | 深圳市万值科技有限公司 | LED transparent display and dynamic picture synchronous transmission display equipment and process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103855280B (en) | 2018-05-18 |
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Effective date of registration: 20210119 Address after: 518000, 6th floor, building 1, Tianliao community, Gongming office, Guangming New District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Refond Optoelectronics Co.,Ltd. Address before: 201306 room 8650, building 1, 1758, Luchaogang Road, Luchaogang Town, Pudong New Area, Shanghai Patentee before: SHANGHAI RUIFENG OPTOELECTRONICS Co.,Ltd. |
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