201244178 六、發明說明： 【發明所屬之技術領威】 [0001] 本發明涉及〆穆發光二極體封裝結構及其製造方法。 【先前技術] [0002] 先前之發光二極體対裝制程通常是將發光二極體晶片設 置在基座上之後，利用注射等方式將液態封裝材料注入 反射杯中，填充滿整個反射杯並覆蓋發光二極體晶片， 接著加熱固化液態之封裝材料以形成封裝層。然而，由 於反射杯空間過大，容易使填充於其内之封裝材料内之 螢光粉使用過多，但反射杯内能被激發之螢光粉卻有限 ，從而會造成螢光粉浪費’導致成本提高，另外，過多 之螢光粉還會遮蔽發光二極體晶片，導致發光效率低。 【發明内容】 [0003] 有鑒於此，有必要提供一種能節省螢光粉使用之發光二 極體封裝結構及其製造方法。 [0004] —種發光二極體封裝結構’其包括一封裝基座，所述封 裝基座上形成一容置杯’該容置杯底部分別暴露有第一 電極及第二電極。所述發光二極體封裝結構還包括一設 置在容置杯中之封裝體模組以及填充在容置杯中並覆蓋 該封裝體模組之透明封裝層。所述封裝體模組包括基板 、設置在基板上之發光二極體晶片及包覆發光二極體晶 片之螢光粉層。該基板具有第一導電層及第二導電層， 該發光二極體晶片與第一導電層和第二導電層電性連接 ，所述第一導電層和第二導電層分別與封裝基座上之第 一電極及第二電極電性連接。 100114957 表單編號A0101 第4頁/共19頁 1002025020-0 201244178 [0005] [0006] [0007] [0008] [0009] Ο [0010] [0011]201244178 VI. Description of the Invention: [Technical Leadership of the Invention] [0001] The present invention relates to a germanium light emitting diode package structure and a method of fabricating the same. [Prior Art] [0002] The conventional LED package process usually involves placing a liquid crystal package material into a reflective cup by injection or the like after filling the light-emitting diode wafer on the pedestal, filling the entire reflector cup and The light-emitting diode wafer is covered, and then the liquid packaging material is heated and cured to form an encapsulation layer. However, since the reflective cup space is too large, it is easy to use too much fluorescent powder in the encapsulating material filled therein, but the fluorescent powder that can be excited in the reflective cup is limited, which causes waste of the fluorescent powder, resulting in an increase in cost. In addition, too much phosphor powder will block the LED chip, resulting in low luminous efficiency. SUMMARY OF THE INVENTION [0003] In view of the above, it is necessary to provide a light emitting diode package structure and a method of fabricating the same that can save the use of phosphor powder. [0004] A light emitting diode package structure includes a package base on which a receiving cup is formed. The bottom of the receiving cup is exposed with a first electrode and a second electrode, respectively. The LED package structure further includes a package module disposed in the receiving cup and a transparent encapsulation layer filled in the receiving cup and covering the package module. The package module includes a substrate, a light emitting diode chip disposed on the substrate, and a phosphor powder layer covering the light emitting diode chip. The substrate has a first conductive layer and a second conductive layer. The light emitting diode chip is electrically connected to the first conductive layer and the second conductive layer, and the first conductive layer and the second conductive layer are respectively on the package base The first electrode and the second electrode are electrically connected. 100114957 Form No. A0101 Page 4 of 19 1002025020-0 201244178 [0005] [0007] [0008] [0009] [0011] [0011]
[0012] [0013] [0014] 一種發光二極體封裝結構之製造方法，其包括以下幾個 步驟： 步驟1，提供一基板，該基板具有多個導電層； 步驟2，將多個發光二極體晶片設置在基板上，該多個發 光二極體晶片分別與基板上之多個導電層電性連接； 步驟3,利用螢光粉層包覆多個發光二極體晶片； 步驟4，切割基板，形成多個封裝體模組，每個封裝體模 組包括一發光二極體晶片及與發光二極體晶片電性連接 之兩個導電層； 步驟5，提供一封裝基座，該封裝基座上形成一容置杯， 該容置杯底部分別暴露有第一電極及第二電極，將切割 後之封裝體模組設置在容置杯中，並且其兩個導電層分 別與第一電極及第二電極電性連接； 步驟6，在封裝基座之容置杯中填充透明封裝層，形成一 發光二極體封裝結構。 上述之發光二極體封裝結構以及製造方法先獨立製造一 封裝體模組，然後將具有有發光二極體晶片及螢光粉層 之封裝體模組再設置在封裝基座之容置杯中，相對於傳 統之在容置杯中設置發光二極體晶片後在整個容置杯中 填滿螢光材料之封裝方法，能夠節省螢光粉使用。 實施方式】 以下將結合附圖對本發明作進一步之詳細說明。 實施方式一 100114957 表單編號Α0101 第5頁/共19頁 1002025020-0 201244178 [0015]請參閱圖1，本發明第一實施方式提供之一種發光二極體 封裝結構10包括封裝基座1〇〇、設置在封裝基座1〇〇上之 封裝體模組200以及包覆該封裝體模組2〇〇之透明封裝層 300 〇 [0016]所述封裝基座100包括頂面11〇以及底面12〇，從頂面11〇 沿底面12 0方向開設形成一容置杯13 0。該容置杯13 〇用 於提供封裝體模組20 0及透明封裝層300之容置空間並設 定發光二極體封裝結構10之光場，容置杯丨3〇之内表面為 傾斜面’該傾斜面自頂面11 〇向底面12 〇方向延伸並沿徑 向向内傾斜’使整個容置杯130上寬下窄，呈一漏斗狀。 優選地’容置杯130之内表面還塗敷有反光材料。所述封 裝基座100内還設置有相互間隔之第一電極14〇以及第二 電極150 ’該第一電極140以及第二電極150之一端分別 暴露在容置杯130之底部，用於與封裝體模組2〇〇連接， 另一端分別延伸到封裝基座1 〇 〇兩側外，用於與外部電路 連接。 [0017] 所述封裝體模組200包括基板210、設置在基板21〇上之 發光二極體晶片220以及包覆該發光二極體晶片220之螢 光粉層230。所述基板210由第一導電層211、絕緣層212 以及第二導電層213構成。該第一導電層211和第二導電 層21 3從基板21 0之頂面延伸到基板21 〇之底面。該絕緣 層212連接第一導電層211和第二導電層213。在本實施 方式中，絕緣層312可為高分子材料、陶瓷或塑膠材料構 成，第一導電層211和第二導電層213為金屬材料製成。 發光一極體晶片220覆晶設置在基板210上，與第一導電 1002025020-0 100114957 表單編號A0101 第6頁/共19頁 201244178 [0018] Ο [0019] 〇 [0020] [0021] [0022] 層211和第二導電層21 3電性連接。螢光粉層230覆蓋基 板210之表面以及發光二極體晶片220，其厚度略微大於 發光二極體晶片220之厚度。螢光粉層23〇是由參雜有螢 光粉之封膠樹脂製成，該螢光粉可選自釔鋁石榴石、铽 在乙紹石權石及梦酸鹽中之一種或幾種之组合。 所述封裝體模組200設置在封裝基座1〇〇之容置杯130中 ，並且其上第一導電層211和第二導電層213利用焊接或 者共晶方式分別與封裝基座1〇〇上之第一電極以及第 二電極150電性連接。當封裝體模組2〇〇設置在封裝基座 100之容置杯130中時，由於封裝體模組2〇〇之尺寸相對 容置杯130來說較小，所述螢光粉層230之侧壁與容置杯 130之内表面相隔開一定之距離，螢光粉層23〇只包覆在 容置杯130之底部之發光二極體晶片22〇之附近區域。 所述透明封裝層300為一封膠樹脂，其填充在封裝基座 100之容置杯130中並包覆封裝體模組2〇〇，用於保護封 裝體模組200免受灰塵、水氣等影響。 請參閱圖2，本發明第一實施方式提供之一種發光二極體 封裝結構之製造方法，其包括以下幾個步驟： 步驟一，提供一基板210，該基板210具有多個導電層 210a ’該多個導電層2i〇a之間藉由絕緣層2i〇b連接，該 多個導電層21〇a從基板210之頂面延伸到基板21〇之底面 。在本實施方式中，絕緣層210b可為高分子材料、陶究 或塑膠材料構成，導電層2l〇a由金屬材料製成。 步驟二’將多個發光二極體晶片220分別覆晶設置在基板 100114957 表單編號A0101 第7頁/共19頁 1002025020-0 201244178 [0023] [0024] [0025] [0026] [0027] 2 10上，該多個發光二極體晶片22〇分別與基板2i 〇上之 多個導電層21 0 a電性連接。 步驟三，將一螢光粉層23〇覆蓋基板21〇整個表面以及多 個發光二極體晶片220。螢光粉層23〇是由參雜有螢光粉 之封膠樹脂製成，所述螢光粉可選自釔鋁石榴石、铽釔 鋁石榴石及矽酸鹽中之一種或幾種之組合。 步驟四，切割基板21〇，分別形成多個封裝體模組2〇〇， 其中每個封裝體模組200包括一發光二極體晶片220、分 別與该發光二極體晶片220電性連接之兩個導電層21 〇3以 及覆蓋發光二極體晶片220之螢光粉層230。 步驟五，提供一封裝基座1〇〇，該封裝基座1〇〇上開設形 成一容置杯130，封裝基座1〇〇内還設置有相互間隔之第 一電極140以及第二電極〗50，該第一電極14〇以及第二 電極150之一端分別暴露在容置杯13〇之底部，另一端分 別延伸到封裝封裝基座100外，將切割後之封裝體模組 200設置在容置杯130中，並且其兩個導電層2i〇a利用焊 接或者共晶方式分別與第一電極140以及第二電極15〇電 性連接。容置杯130之内表面為傾斜面，該傾斜面自頂面 向底面方向並沿徑向向内傾斜，使整個容置杯13〇上寬下 窄，呈一漏斗狀。優選地，容置杯130之内表面還塗敷有 反光材料。 步驟六’在封裝基座1〇〇之容置杯130中填充透明封裝層 300，形成一發光二極體封裝結構1〇。 上述之發光二極體封裝結構10以及發光二極體封裝結構 100114957 表單編號A0101 第8頁/共19頁 1002025020-0 201244178 10之製造方法是先獨立製作封裝體模組200，將發光二極 體晶片220以及螢光粉層230設置在基板210上，然後將 載有發光二極體晶片220以及螢光粉層230之基板210再 設置在封裝基座100之容置杯130中。當封裝體模組200 設置在容置杯130中時，螢光粉層230只是包覆在容置杯 130之底部之發光二極體晶片220之附近區域，其厚度略 微大於發光二極體晶片220之厚度，因此，相對於傳統之 在整個容置杯130中填滿螢光材料之封裝結構，能夠節省 螢光粉使用。另外，藉由將多個發光二極體晶片220與一 Ο 螢光粉層23 0結合後再分割成多個封裝體模組20 0之方式 ，避免了先前技術中需要分別在每個發光二極體封裝單 獨注入螢光粉層，在制程方面更加簡化。 [0028] 實施方式二 [0029] 請參閱圖3，本發明第二實施方式提供之一種發光二極體 封裝結構20與第一實施方式之發光二極體封裝結構10之 區別在於：封裝體模組400之基板410包括一絕緣層411 Q 以及相互間隔形成在該絕緣層411上之第一導電層412和 第二導電層413。發光二極體晶片220覆晶設置在基板 410上，與第一導電層412和第二導電層41 3電性連接。 螢光粉層230形成基板410之表面，包覆發光二極體晶片 220，並且第一導電層412和第二導電層413分別從螢光 粉層230之兩端露出。封裝體模組400之絕緣層411採用 焊接或黏結等方式被固定在封裝基座100之容置杯130之 底面，第一導電層412和第二導電層413分別藉由金屬導 線420與封裝基座10 0上之第一電極140以及第二電極150 100114957 表單編號A0101 第9頁/共19頁 1002025020-0 201244178 連接。 [0030] 請參閱圖4，本發明第二實施方式提供之一種發光二極體 封裝結構之製造方法，其包括以下幾個步驟： [0031] 步驟一，提供一基板410，該基板410包括一絕緣層410a 以及形成在該絕緣層410a上之多個相互間隔之導電層 410b。 [0032] 步驟二，將多個發光二極體晶片220分別覆晶設置在基板 410上，該多個發光二極體晶片220分別與基板410上之 多個導電層410a電性連接。 [0033] 步驟三，利用螢光粉層230覆蓋每個發光二極體晶片220 ，螢光粉層230之間相互間隔，使導電層410a之一端露出 。螢光粉層230是由參雜有螢光粉之封膠樹脂製成，所述 螢光粉可選自釔鋁石榴石、铽釔鋁石榴石及矽酸鹽中之 一種或幾種之組合。 [0034] 步驟四，切割基板410，形成多個封裝體模組400，每個 封裝體模組400包括一發光二極體晶片220、與發光二極 體晶片220電性連接之兩個導電層410b以及覆蓋發光二極 體晶片220之螢光粉層230。 [0035] 步驟五，提供一封裝基座100，該封裝基座100上開設形 成一容置杯130，封裝基座100内還設置有相互間隔之第 一電極140以及第二電極150，該第一電極140以及第二 電極150之一端分別暴露在容置杯130之底部，另一端分 別延伸到封裝封裝基座100外，將切割後之封裝體模組 400設置在容置杯130中，並且封裝體模組400之絕緣層 100114957 表單編號A0101 第10頁/共19頁 1002025020-0 201244178 410a採用焊接或黏結等方式被固定在容置杯130之底面。 容置杯1 3 0之内表面為傾斜面，該傾斜面自頂面向底面方 向並沿徑向向内傾斜，使整個容置杯130上寬下窄，呈一 漏斗狀。優選地，容置杯130之内表面還塗敷有反光材料 [0036] 步驟六，利用金屬導線420將兩個導電層410b分別與封裝 基座100上之第一電極140以及第二電極150連接。 [0037] 步驟七，在封裝基座100之容置杯130中填充透明封裝層 300，形成一發光二極體封裝結構20。 [0038] 相較於先前技術，本發明之發光二極體封裝結構以及製 造方法先獨立製造一封裝體模組，然後將具有有發光二 極體晶片及螢光粉層之封裝體模組再設置在封裝基座之 容置杯中，相對於傳統之在容置杯中設置發光二極體晶 片後在整個容置杯中填滿螢光材料之封裝方法，能夠節 省螢光粉使用。 [0039] 另外，本領域技術人員還可在本發明精神内做其他變化 ，當然，這些依據本發明精神所做之變化，都應包含在 本發明所要求保護之範圍之内。 【圖式簡單說明】 [0040] 圖1為本發明第一實施方式中之發光二極體封裝結構示意 圖。 [0041] 圖2為本發明第一實施方式中之發光二極體封裝結構之製 造方法流程圖。 100114957 圖3為本發明第二實施方式中之發光二極體封裝結構示意 表單編號A0101 第11頁/共19頁 1002025020-0 [0042] 201244178 圖。 [0043] 圖4為本發明第二實施方式中之發光二極體封裝結構之製 造方法流程圖。 【主要元件符號說明】 [0044] 發光二極體封裝結構：10、20 [0045] 封裝基座：100 [0046] 頂面：110 [0047] 底面：120 [0048] 容置杯：130 [0049] 第一電極：140 [0050] 第二電極：150 [0051] 封裝體模組：200 ' 400 [0052] 基板：210、410 [0053] 第一導電層：211 ' 412 [0054] 絕緣層：212、411 [0055] 第二導電層：213 、413 [0056] 發光二極體晶片： 220 [0057] 螢光粉層：230 [0058] 透明封裝層：300 [0059] 金屬導線：420 表單編號A0101 第12頁/共19頁 100114957 1002025020-0[0014] [0014] A method of manufacturing a light emitting diode package structure, comprising the following steps: Step 1, providing a substrate having a plurality of conductive layers; Step 2, a plurality of light emitting two The polar body wafer is disposed on the substrate, and the plurality of light emitting diode chips are electrically connected to the plurality of conductive layers on the substrate respectively; Step 3, coating the plurality of light emitting diode chips with the phosphor powder layer; Step 4 Cutting the substrate to form a plurality of package modules, each package module comprising a light emitting diode chip and two conductive layers electrically connected to the light emitting diode chip; Step 5, providing a package base, Forming a receiving cup on the package base, the first electrode and the second electrode are respectively exposed on the bottom of the receiving cup, and the packaged module is disposed in the receiving cup, and the two conductive layers are respectively The first electrode and the second electrode are electrically connected; in step 6, the transparent encapsulation layer is filled in the receiving cup of the package base to form a light emitting diode package structure. In the above-mentioned LED package structure and manufacturing method, a package module is separately manufactured, and then a package module having a light-emitting diode chip and a phosphor layer is disposed in a receiving cup of the package base. Compared with the conventional packaging method in which the fluorescent material is filled in the accommodating cup after the illuminating diode is disposed in the accommodating cup, the use of the luminescent powder can be saved. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings. Embodiment 1 100114957 Form No. 101 0101 Page 5 / Total 19 Page 1002025020-0 201244178 [0015] Referring to FIG. 1 , a light emitting diode package structure 10 according to a first embodiment of the present invention includes a package base 1 , The package module 200 disposed on the package base 1 and the transparent package layer 300 covering the package module 〇 [0016] The package base 100 includes a top surface 11 〇 and a bottom surface 12 〇 A receiving cup 130 is formed from the top surface 11〇 along the bottom surface 120. The accommodating cup 13 〇 is used for providing the accommodating space of the package module 205 and the transparent encapsulation layer 300 and setting the light field of the illuminating diode package structure 10, and the inner surface of the accommodating cup 丨 3 为 is an inclined surface ′ The inclined surface extends from the top surface 11 〇 toward the bottom surface 12 并 and is inclined inwardly in the radial direction. The entire accommodating cup 130 is wide and narrow, and has a funnel shape. Preferably, the inner surface of the receiving cup 130 is also coated with a reflective material. The package base 100 is further provided with a first electrode 14 相互 and a second electrode 150 ′ which are spaced apart from each other. One end of the first electrode 140 and the second electrode 150 are respectively exposed at the bottom of the accommodating cup 130 for packaging. The body modules are connected to each other, and the other ends are respectively extended to the outside of the package base 1 to be connected to an external circuit. [0017] The package module 200 includes a substrate 210, a light emitting diode chip 220 disposed on the substrate 21A, and a phosphor layer 230 covering the light emitting diode wafer 220. The substrate 210 is composed of a first conductive layer 211, an insulating layer 212, and a second conductive layer 213. The first conductive layer 211 and the second conductive layer 213 extend from the top surface of the substrate 210 to the bottom surface of the substrate 21. The insulating layer 212 connects the first conductive layer 211 and the second conductive layer 213. In the present embodiment, the insulating layer 312 may be made of a polymer material, a ceramic material or a plastic material, and the first conductive layer 211 and the second conductive layer 213 are made of a metal material. The light-emitting diode wafer 220 is flip-chip disposed on the substrate 210, and the first conductive 1002025020-0 100114957 Form No. A0101 Page 6 / 19 pages 201244178 [0018] Ο [0019] 〇 [0020] [0022] The layer 211 and the second conductive layer 213 are electrically connected. The phosphor layer 230 covers the surface of the substrate 210 and the light emitting diode wafer 220, the thickness of which is slightly larger than the thickness of the LED wafer 220. The phosphor powder layer 23 is made of a sealing resin mixed with a fluorescent powder, and the fluorescent powder may be selected from one or more of yttrium aluminum garnet, yttrium sulphate and dream acid salt. The combination. The package module 200 is disposed in the receiving cup 130 of the package base 1 , and the first conductive layer 211 and the second conductive layer 213 are respectively soldered or eutectic to the package base 1 The first electrode and the second electrode 150 are electrically connected. When the package module 2 is disposed in the receiving cup 130 of the package base 100, since the size of the package module 2 is smaller than that of the receiving cup 130, the phosphor layer 230 The sidewall is spaced apart from the inner surface of the receiving cup 130 by a distance, and the phosphor layer 23 is only coated in the vicinity of the bottom of the light-emitting diode wafer 22 at the bottom of the receiving cup 130. The transparent encapsulating layer 300 is a piece of adhesive resin filled in the receiving cup 130 of the package base 100 and covering the package module 2 〇〇 for protecting the package module 200 from dust and moisture. And so on. Referring to FIG. 2, a method for fabricating a light emitting diode package structure according to a first embodiment of the present invention includes the following steps: Step 1: providing a substrate 210 having a plurality of conductive layers 210a' The plurality of conductive layers 2i〇a are connected by an insulating layer 2i〇b extending from a top surface of the substrate 210 to a bottom surface of the substrate 21〇. In the present embodiment, the insulating layer 210b may be made of a polymer material, a ceramic material or a plastic material, and the conductive layer 21a is made of a metal material. Step 2 'Covering multiple LED chips 220 on the substrate 100114957 respectively Form No. A0101 Page 7 / 19 pages 1002025020-0 201244178 [0023] [0025] [0027] [0027] 2 10 The plurality of LED chips 22 are electrically connected to the plurality of conductive layers 210 a on the substrate 2i. In the third step, a phosphor layer 23 is covered to cover the entire surface of the substrate 21 and the plurality of LED chips 220. The phosphor layer 23 is made of a sealant resin mixed with a phosphor powder, and the phosphor powder may be selected from one or more of yttrium aluminum garnet, yttrium aluminum garnet and citrate. combination. Step 4: cutting the substrate 21A to form a plurality of package modules 2, wherein each of the package modules 200 includes a light emitting diode chip 220 electrically connected to the LED chip 220. Two conductive layers 21 〇 3 and a phosphor layer 230 covering the LED array 220. In step 5, a package base 1 is provided. The package base 1 defines a receiving cup 130. The package base 1 is further provided with a first electrode 140 and a second electrode spaced apart from each other. 50. One end of the first electrode 14〇 and the second electrode 150 are respectively exposed at the bottom of the receiving cup 13〇, and the other ends respectively extend outside the package package base 100, and the packaged package module 200 is disposed in the capacity. The cup 130 is disposed, and the two conductive layers 2i〇a are electrically connected to the first electrode 140 and the second electrode 15 respectively by soldering or eutectic. The inner surface of the accommodating cup 130 is an inclined surface which is inclined from the top surface toward the bottom surface and radially inward, so that the entire accommodating cup 13 is wide and narrow, and has a funnel shape. Preferably, the inner surface of the receiving cup 130 is also coated with a reflective material. In step six, the transparent encapsulation layer 300 is filled in the receiving cup 130 of the package base 1 to form a light emitting diode package structure. The above-mentioned light-emitting diode package structure 10 and the light-emitting diode package structure 100114957 Form No. A0101 Page 8 / 19 pages 1002025020-0 201244178 10 The manufacturing method is to independently manufacture the package module 200 and the light-emitting diode The wafer 220 and the phosphor layer 230 are disposed on the substrate 210, and then the substrate 210 carrying the LED array 220 and the phosphor layer 230 is disposed in the receiving cup 130 of the package base 100. When the package module 200 is disposed in the accommodating cup 130, the phosphor layer 230 is only wrapped in the vicinity of the illuminating diode chip 220 at the bottom of the accommodating cup 130, and the thickness thereof is slightly larger than that of the illuminating diode chip. The thickness of 220, therefore, can save the use of phosphor powder compared to the conventional packaging structure in which the entire receiving cup 130 is filled with the fluorescent material. In addition, by combining a plurality of LED chips 220 with a phosphor powder layer 230 and then dividing into a plurality of package modules 20, it is avoided that the prior art needs to be separately in each of the two LEDs. The polar package is separately injected into the phosphor layer, which is more simplified in terms of process. [0028] Embodiment 2 [0029] Referring to FIG. 3, a second embodiment of the present invention provides a light emitting diode package structure 20 that differs from the light emitting diode package structure 10 of the first embodiment in that: The substrate 410 of the group 400 includes an insulating layer 411 Q and a first conductive layer 412 and a second conductive layer 413 which are spaced apart from each other on the insulating layer 411. The LED wafer 220 is flip-chip mounted on the substrate 410 and electrically connected to the first conductive layer 412 and the second conductive layer 41 3 . The phosphor layer 230 forms the surface of the substrate 410, encapsulating the LED wafer 220, and the first conductive layer 412 and the second conductive layer 413 are exposed from both ends of the phosphor layer 230, respectively. The insulating layer 411 of the package module 400 is fixed on the bottom surface of the receiving cup 130 of the package base 100 by soldering or bonding. The first conductive layer 412 and the second conductive layer 413 are respectively connected by the metal wire 420 and the package base. The first electrode 140 and the second electrode 150 100114957 on the socket 100 form number A0101 page 9 / 19 pages 1002025020-0 201244178 connection. [0030] Please refer to FIG. 4, a method for fabricating a light emitting diode package structure according to a second embodiment of the present invention includes the following steps: [0031] Step 1 provides a substrate 410, and the substrate 410 includes a An insulating layer 410a and a plurality of mutually spaced conductive layers 410b formed on the insulating layer 410a. [0032] Step 2: The plurality of LED chips 220 are respectively flip-chip mounted on the substrate 410, and the plurality of LED chips 220 are electrically connected to the plurality of conductive layers 410a on the substrate 410. [0033] Step 3, covering each of the LED wafers 220 with the phosphor layer 230, and the phosphor layers 230 are spaced apart from each other to expose one end of the conductive layer 410a. The phosphor powder layer 230 is made of a sealant resin mixed with a phosphor powder, and the phosphor powder may be selected from one or a combination of yttrium aluminum garnet, yttrium aluminum garnet and bismuth citrate. . [0034] Step 4, cutting the substrate 410 to form a plurality of package modules 400, each package module 400 includes a light emitting diode chip 220 and two conductive layers electrically connected to the LED chip 220 410b and a phosphor layer 230 covering the LED array 220. [0035] Step 5, a package base 100 is provided, and a receiving cup 130 is formed on the package base 100. The package base 100 is further provided with a first electrode 140 and a second electrode 150 spaced apart from each other. One end of the electrode 140 and the second electrode 150 are respectively exposed at the bottom of the accommodating cup 130, and the other end extends to the outside of the package package base 100, and the packaged package module 400 is disposed in the accommodating cup 130, and Insulation layer 100114957 of package module 400 Form No. A0101 Page 10 / Total 19 page 1002025020-0 201244178 410a is fixed on the bottom surface of the receiving cup 130 by welding or bonding. The inner surface of the receiving cup 130 is an inclined surface which is inclined from the top surface toward the bottom surface and is inclined inward in the radial direction, so that the entire receiving cup 130 is wide and narrow, and has a funnel shape. Preferably, the inner surface of the receiving cup 130 is further coated with a reflective material. [0036] Step 6. The two conductive layers 410b are respectively connected to the first electrode 140 and the second electrode 150 on the package base 100 by using the metal wires 420. . [0037] Step 7: filling the transparent encapsulation layer 300 in the receiving cup 130 of the package base 100 to form a light emitting diode package structure 20. [0038] Compared with the prior art, the LED package structure and the manufacturing method of the present invention separately manufacture a package module, and then package the module with the LED chip and the phosphor layer. The packaging method of the fluorescent material is provided in the accommodating cup of the package base, and the fluorescent material is filled in the entire accommodating cup after the illuminating diode is disposed in the accommodating cup. In addition, those skilled in the art can make other changes in the spirit of the present invention. Of course, all changes made in accordance with the spirit of the present invention should be included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS [0040] FIG. 1 is a schematic view showing a package structure of a light-emitting diode according to a first embodiment of the present invention. 2 is a flow chart showing a method of manufacturing a light emitting diode package structure according to a first embodiment of the present invention. 100114957 FIG. 3 is a schematic diagram of a package structure of a light-emitting diode according to a second embodiment of the present invention. Form No. A0101 Page 11 of 19 1002025020-0 [0042] 201244178. 4 is a flow chart showing a method of fabricating a light emitting diode package structure according to a second embodiment of the present invention. [Main component symbol description] [0044] LED package structure: 10, 20 [0045] Package base: 100 [0046] Top surface: 110 [0047] Bottom surface: 120 [0048] accommodating cup: 130 [0049 First electrode: 140 [0050] Second electrode: 150 [0051] Package module: 200 '400 [0052] Substrate: 210, 410 [0053] First conductive layer: 211 ' 412 [0054] Insulation layer: 212, 411 [0055] second conductive layer: 213, 413 [0056] light emitting diode wafer: 220 [0057] phosphor powder layer: 230 [0058] transparent encapsulation layer: 300 [0059] metal wire: 420 form number A0101 Page 12 of 19 100114957 1002025020-0