CN113964260B - Diode packaging method - Google Patents
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- CN113964260B CN113964260B CN202111177038.2A CN202111177038A CN113964260B CN 113964260 B CN113964260 B CN 113964260B CN 202111177038 A CN202111177038 A CN 202111177038A CN 113964260 B CN113964260 B CN 113964260B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000005507 spraying Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000000853 adhesive Substances 0.000 claims abstract description 11
- 230000001070 adhesive effect Effects 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 86
- 238000007751 thermal spraying Methods 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000000608 laser ablation Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 238000004088 simulation Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an energy-saving and efficient diode packaging method and a diode. Spraying a packaging adhesive material in the groove of the substrate, and fixing the first electrode and the second electrode; arranging an insulating layer on the front surface of the substrate, and packaging the light-emitting diode chip into the first insulating layer; and arranging a circuit layer on the insulating layer, and leading out the first electrode and the second electrode through the circuit layer. The substrate is provided with the groove, and the electrode can be fixed by directly spraying the adhesive material. The insulating layer directly contains the LED chip, so that the chip is prevented from being damaged and offset, the electrode is led out by the final circuit layer, and meanwhile, the electrode can be protected to a certain extent. The beneficial effects are that: the mould is used as a packaging carrier, so that the packaging substrate does not need to be operated too much, and the cost can be saved. The circuit layer is present, a plurality of common lines can be printed at the same time, and the speed of process production can be improved. The manufactured package structure can be directly mounted on a component (board) by SMT, thereby improving the production efficiency.
Description
Technical Field
The invention relates to the technical field of diodes, in particular to a diode packaging method.
Background
At present, the traditional packaging mode of the light emitting diode is to connect the electrode of the light emitting diode with a packaging substrate by wire bonding, and because the wire bonding needs to be carried out one by one, the application requirements of multiple chips have the problem that the production speed and the yield can not meet the requirements; moreover, the wire bonding method is difficult to be miniaturized in volume, has high impedance, and is difficult to satisfy the application requirements of light weight, thinness, smallness and high brightness.
In the prior art, a chip needs to be accurately positioned, picked and placed at a designated position of a package substrate, however, as the size of the chip of the light emitting diode is smaller and smaller, the chip pickup stability is poor, and the chip rotation, offset, material dropping and other abnormalities are easy to occur.
Disclosure of Invention
The invention provides a diode packaging method, which is used for solving the problems that a chip rotates, deviates, falls off materials and the like, the size of a suction nozzle is quite small in order to meet the size of the chip, the suction nozzle is easy to block to cause insufficient suction, the waste of production efficiency is caused, and the production cost is increased.
A diode packaging method, comprising:
spraying a packaging adhesive material in the groove of the substrate, and fixing the first electrode and the second electrode;
arranging an insulating layer on the front surface of the substrate, and packaging the light-emitting diode chip into the insulating layer;
and arranging a circuit layer on the insulating layer, and leading out the electrodes through the circuit layer.
As an embodiment of the present invention: the method further comprises the following steps:
determining the substrate surface profile through an image pickup device;
determining the position of a groove according to the surface profile;
according to the position of the groove, the first electrode and the second electrode are symmetrically arranged in the groove by the central point of the substrate;
and after the first electrode and the second electrode are arranged in the groove, determining a thermal spraying range, and performing glue material spraying in the thermal spraying range.
As an embodiment of the present invention: the insulating layer is formed by the following steps:
embedding an insulating embedder on the substrate by adopting laser ablation melting to form an insulating array layer;
arranging a hollow area in the insulation array layer, and arranging a light-emitting diode chip in the hollow area; wherein,
at least 1 light-emitting diode chip can be arranged in the hollow area;
And the insulating array layer is wrapped by an insulating transparent material to form an insulating layer.
As an embodiment of the present invention: the spraying encapsulation glue material still includes:
obtaining the groove position of the groove, and spraying heat-conducting silica gel in the groove;
determining a first electrode and a second electrode according to the position of the groove;
conducting conductive silver paste spraying on the first electrode and the second electrode;
and after the conductive silver adhesive is sprayed, filling an insulating material in the groove until the groove is level to the upper surface of the substrate.
As an embodiment of the present invention: the method further comprises the following steps:
arranging a glass shell outside the insulating layer to generate a transparent protective layer;
filling the upper part of the insulating layer and the interiors of the first electrode and the second electrode with a conductive material to form a ring-assembled conductive layer;
and a power supply circuit is arranged in the conductive layer and is electrically connected with the light-emitting diode chip in sequence to form an inverted T-shaped circuit layer.
As an embodiment of the present invention: the method further comprises the following steps:
taking the internal parameters of the diode as objects, and carrying out dynamic modeling through Saber;
the device is used for determining waveform data of the diode in the modeling process according to the dynamic modeling;
Determining the temperature parameter of the diode according to the waveform data;
and carrying out high-temperature annealing on the substrate, the first electrode, the second electrode and the insulating layer according to the temperature parameters.
As an embodiment of the present invention: the method further comprises the following steps:
loading dynamic test waveforms of the diodes into simulation software, and randomly generating coding waveforms of parameters to be extracted;
simulating the structure of the diode according to the coding waveform;
obtaining a simulation result and determining a packaging structure of the diode;
and determining the effective quantity, the base region width and the doping concentration of the diode according to the packaging structure.
An energy efficient diode comprising:
the electrode structure comprises a substrate, wherein a first electrode and a second electrode are arranged in a groove of the substrate;
the LED chip comprises an insulating layer, a light-emitting diode chip and a light-emitting diode chip, wherein the light-emitting diode chip is arranged in the insulating layer;
and the circuit layer is arranged on the insulating layer and leads out the electrodes.
As an embodiment of the present invention: at least 1 light-emitting diode chip is arranged in the insulating layer and connected with the first electrode and the second electrode;
as an embodiment of the present invention: further comprising:
the transparent protective layer is used for covering the light-emitting diode chip and wrapping the first electrode and the second electrode;
An insulating array layer for composing the insulating layer;
and the conductive layer is connected with the inner surfaces of the first electrode and the second electrode and is flush with the circuit layer, the first electrode and the second electrode.
The invention has the beneficial effects that: the substrate can be used as a mold and a packaging carrier, and the packaging substrate does not need to be operated too much, so that the cost can be saved. The circuit layer is present, a plurality of common lines can be printed at the same time, and the speed of process production can be improved. The manufactured package structure can be directly mounted on the package substrate (on board) by SMT, thereby improving the production efficiency. The LED energy-saving control system can be provided with a plurality of LED chips, so that the LED energy-saving control system can be suitable for various scenes, and further can keep high efficiency in any scene. And the LED chip can not be damaged.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a flow chart of a method for packaging a diode according to an embodiment of the present invention;
fig. 2 is a structural diagram of a diode according to an embodiment of the invention.
FIG. 3 is a top view of a diode according to an embodiment of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
As shown in fig. 1, the present invention is a diode packaging method, including:
spraying a packaging adhesive material in the groove of the substrate to fix the first electrode and the second electrode;
arranging an insulating layer on the front surface of the substrate, and packaging the light-emitting diode chip into the insulating layer;
and arranging a circuit layer on the insulating layer, and leading out the first electrode and the second electrode through the circuit layer.
The working principle of the technical scheme is as follows: the invention mainly carries out packaging in a mode of splicing the fixed dies during packaging, the substrate is provided with the groove, and the electrodes can be fixed by directly spraying the adhesive material. The insulating layer directly contains the light-emitting diode chip, so that the chip is prevented from being damaged and shifting, the electrode is led out by the final circuit layer, and meanwhile, the electrode can be protected to a certain extent. The electrode functions to link the electrode with any other device through the circuit layer. Meanwhile, a plurality of light emitting diode chips can be arranged in the insulating layer, and different diode chips are not interfered with each other.
The beneficial effects of the above technical scheme are: the substrate can be used as a mold and a packaging carrier, and the packaging substrate does not need to be operated too much, so that the cost can be saved. The circuit layer is present, a plurality of common lines can be printed at the same time, and the speed of process production can be improved. The manufactured package structure can be directly mounted on the package substrate (on board) by SMT, thereby improving the production efficiency. The LED energy-saving control system can be provided with a plurality of LED chips, so that the LED energy-saving control system can be suitable for various scenes, and further can keep high efficiency in any scene. And the LED chip can not be damaged.
In one embodiment of the invention:
the method further comprises the following steps:
determining the substrate surface profile through an image pickup device;
determining the position of a groove according to the surface profile;
according to the position of the groove, the first electrode and the second electrode are symmetrically arranged in the groove by the central point of the substrate;
and after the first electrode and the second electrode are arranged in the groove, determining a thermal spraying range, and performing glue material spraying in the thermal spraying range.
The working principle of the technical scheme is as follows: according to the invention, the thermal spraying glue material is adopted on the substrate, the direct fixation of the electrode can be realized by the thermal spraying glue material, and other layers are arranged for auxiliary fixation. It is not necessary to have too many operations on the electrode fixation. The reason why the present invention selects the image pickup apparatus is because it is necessary to symmetrically arrange the first electrode and the second electrode in the groove in the course of performing the fixing of the first electrode and the second electrode, and if it is desired to arrange the first electrode and the second electrode in the groove, it is necessary to have a spatial modeling which is effective to realize a virtual model for determining the surface profile of the substrate based on a spatial symmetry technique and then perform the thermal spraying of the paste material of the first electrode and the second electrode in the virtual model.
The beneficial effects of the above technical scheme are: although the invention is only used for the function of the simple first electrode and the second electrode, the invention is based on the space modeling technology of the camera, and the first electrode and the second electrode are fixedly arranged in the most accurate mode through the space modeling technology
In one embodiment:
from the captured image, a first electrode and a first coordinate set (a ═ a) are constructed 1 ,b 1 )，(a 2 ,b 2 )……(a i ,b i ) ); constructing a second electrode and a second set of coordinates (B ═ x) 1 ,y 1 )，(x 2 ,y 2 )……(x i ,y i ))；
Establishing a symmetric coordinate model according to the first coordinate set and the second coordinate set:
and determining that the first electrode and the second electrode are symmetrical according to the symmetrical coordinate model. In the formula, through the symmetrical coordinate model, the corresponding coordinates of the two electrodes are mutually symmetrical, and further, on calculating your result, the coordinate symmetry is expressed as long as the formula is met.
In one embodiment of the invention:
as shown in fig. 2, laser ablation melting is adopted to perform insulating embedder inlaying on the substrate to form an insulating array layer;
arranging a hollow area in the insulation array layer, and arranging a light-emitting diode chip in the hollow area; wherein,
at least 1 light-emitting diode chip can be arranged in the hollow area;
And the insulating array layer is wrapped by an insulating transparent material to form an insulating layer.
The working principle of the technical scheme is as follows: the invention aims to fix the corresponding equipment of the insulating array layer on the substrate firmly by laser ablation melting, mainly connects the chip and the first electrode and the second electrode on the substrate, and mainly connects the electrodes and the chip. In the process, the number of the light-emitting diode chips can be unlimited due to the arrangement of the insulation array, and the mode is efficient and stable, so that the light-emitting diode chips can be directly dismounted when not needed.
In one embodiment of the invention:
the spraying encapsulation glue material still includes:
obtaining the groove position of the groove, and spraying heat-conducting silica gel in the groove;
determining a first electrode and a second electrode according to the position of the groove;
conducting conductive silver paste spraying on the first electrode and the second electrode;
and after the conductive silver adhesive is sprayed, filling an insulating material in the groove until the groove is level to the upper surface of the substrate.
The working principle of the technical scheme is as follows: the powder spraying device has multiple spraying modes when powder spraying is carried out, and different spraying modes can produce different effects. The heat-conducting silica gel spraying enables the heat dissipation capacity to be achieved; the conductive silver paste is sprayed to make the conductive capability. The layer of conductive material is used to effect curing.
In one embodiment of the invention:
as shown in fig. 3, a glass shell is arranged outside the insulating layer to generate a transparent protective layer;
filling the upper part of the insulating layer and the interiors of the first electrode and the second electrode with a conductive material to form a ring-assembled conductive layer;
and a power supply circuit is arranged in the conductive layer and is electrically connected with the light-emitting diode chip in sequence to form an inverted T-shaped circuit layer. The transparent protective shell of the invention can emit light when emitting light, and the T-shaped circuit layer is used for contacting the circuit layer with the electrode.
The working principle and the beneficial effects of the technical scheme are as follows: the conductive layer is in a ring shape to cover the light emitting diode, which is beneficial to protecting the light emitting diode, but part of the electrode is exposed. The invention can also connect more LED chips and customer equipment, thereby improving the efficiency and protecting the safety of the equipment.
In one embodiment of the invention:
taking the internal parameters of the diode as objects, and carrying out dynamic modeling through Saber;
the device is used for determining waveform data of the diode in the modeling process according to the dynamic modeling;
Determining the temperature parameter of the diode according to the waveform data;
and according to the temperature parameters, carrying out high-temperature annealing on the substrate, the first electrode, the second electrode and the insulating layer.
The working principle of the technical scheme is as follows: in order to calculate the temperature of spraying during diode packaging, modeling based on internal parameters of the diode as an object is carried out, and the highest sustainable temperature parameter is calculated.
The beneficial effects of the above technical scheme are: the invention can prevent failure or error of spraying caused by over-high or over-low temperature when high-temperature spraying is carried out.
In one embodiment of the invention:
the method further comprises the following steps:
loading dynamic test waveforms of the diodes into simulation software, and randomly generating coding waveforms of parameters to be extracted;
simulating the structure of the diode according to the coding waveform;
obtaining a simulation result and determining a packaging structure of the diode;
and determining the effective quantity, the base region width and the doping concentration of the diode according to the packaging structure.
The working principle of the technical scheme is as follows: the invention simulates the structure of the diode, because the transparent protective layer needs to protect all aspects and realizes the function of energy saving, the invention determines the simulation structure, mainly aims at realizing the quantity control of the diode, and the base region width is used for ensuring the safety of data transmission. And the final doping concentration is to keep the channel at a uniform level.
The beneficial effects of the above technical scheme are: the LED lamp is beneficial to the overall protection of the diode, and the working state of the LED can be seen.
As shown in fig. 2, an energy-saving and efficient diode comprises:
a substrate, a first electrode and a second electrode,
the electrode structure comprises a substrate, wherein a first electrode and a second electrode are arranged in a groove of the substrate;
the LED chip comprises an insulating layer, a light-emitting diode chip and a light-emitting diode chip, wherein the light-emitting diode chip is arranged in the insulating layer;
and the circuit layer is arranged on the insulating layer and leads out the electrodes.
The working principle of the technical scheme is as follows:
in fig. 2: 1 denotes a substrate, 2 denotes an insulating layer, 3 denotes an LED light emitting diode chip, 4 denotes a transparent protective layer, 7 denotes a first electrode, 8 denotes a second electrode, 6 denotes a circuit layer, and 5 denotes a conductive layer. The invention mainly carries out packaging in a mode of splicing the fixed dies during packaging, the substrate is provided with the groove, and the electrodes can be fixed by directly spraying the adhesive material. The insulating layer directly contains the light-emitting diode chip, so that the chip is prevented from being damaged and shifting, the electrode is led out by the final circuit layer, and meanwhile, the electrode can be protected to a certain extent.
The beneficial effects of the above technical scheme are: the mould is used as a packaging carrier, so that the packaging substrate does not need to be operated too much, and the cost can be saved. The circuit layer is present, a plurality of common lines can be printed at the same time, and the speed of process production can be improved. The manufactured package structure can be directly mounted on the package substrate (on board) by SMT, thereby improving the production efficiency.
In one embodiment of the invention: at least 1 light emitting diode chip is arranged in the insulating layer and connected with the first electrode and the second electrode.
The working principle of the technical scheme is as follows: the invention can at least be provided with a plurality of light emitting diodes, but if more light emitting diodes are needed, a chip can be added, and the number of electrodes is directly increased on the groove.
In one embodiment of the invention:
the transparent protective layer is used for covering the light-emitting diode chip and wrapping the first electrode and the second electrode;
an insulating array layer for composing the insulating layer;
and the conductive layer is connected with the inner surfaces of the first electrode and the second electrode and is flush with the circuit layer, the first electrode and the second electrode.
The working principle and the beneficial effects of the technical scheme are as follows: the invention is provided with a metal electrode layer, mainly connects a chip, a first electrode and a second electrode on a substrate, and mainly connects the electrodes and the chip. The connection mode is a metal layer, so that the base area is extremely large. No contact failure occurs. The first conducting layer is in a ring shape and covers the light emitting diode, so that the light emitting diode is protected, but partial electrodes are exposed.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (6)
1. A method of packaging a diode, comprising:
spraying a packaging adhesive material in the groove of the substrate to fix the first electrode and the second electrode; wherein,
a first electrode and a second electrode are arranged in the groove of the substrate;
arranging an insulating layer on the front surface of the substrate, and packaging the light-emitting diode chip into the insulating layer;
arranging a circuit layer above the insulating layer, and leading out the first electrode and the second electrode through the circuit layer;
the method further comprises the following steps:
determining the substrate surface profile through an image pickup device;
determining the position of a groove according to the surface profile;
according to the position of the groove, the first electrode and the second electrode are symmetrically arranged in the groove by the central point of the substrate;
and after the first electrode and the second electrode are arranged in the groove, determining a thermal spraying range, and performing glue material spraying in the thermal spraying range.
2. The diode packaging method of claim 1, wherein the insulating layer is formed by:
embedding an insulating embedder on the substrate by adopting laser ablation melting to form an insulating array layer;
arranging a hollow area in the insulation array layer, and arranging a light-emitting diode chip in the hollow area; wherein,
at least 1 light-emitting diode chip can be arranged in the hollow area;
and the insulating array layer is wrapped by an insulating transparent material to form an insulating layer.
3. The diode packaging method of claim 1, wherein the spraying of the packaging adhesive further comprises:
obtaining the groove position of the groove, and spraying heat-conducting silica gel in the groove;
determining a first electrode and a second electrode according to the position of the groove;
conducting conductive silver paste spraying on the first electrode and the second electrode;
and after the conductive silver adhesive is sprayed, filling an insulating material in the groove until the groove is level to the upper surface of the substrate.
4. The method of claim 1, further comprising:
arranging a glass shell outside the insulating layer to generate a transparent protective layer;
Filling the first electrode and the second electrode with a conductive material on the insulating layer to form an annular conductive layer;
and a power supply circuit is arranged in the conductive layer and is electrically connected with the light-emitting diode chip in sequence to form an inverted T-shaped circuit layer.
5. The method of claim 1, further comprising:
taking the internal parameters of the diode as objects, and carrying out dynamic modeling through Saber;
the device is used for determining waveform data of the diode in the modeling process according to the dynamic modeling;
determining the temperature parameter of the diode according to the waveform data;
and carrying out high-temperature annealing on the substrate, the first electrode, the second electrode and the insulating layer according to the temperature parameters.
6. The diode packaging method of claim 5, wherein the method further comprises:
loading dynamic test waveforms of the diodes into simulation software, and randomly generating coding waveforms of parameters to be extracted;
simulating the structure of the diode according to the coding waveform;
obtaining a simulation result and determining a packaging structure of the diode;
and determining the effective quantity, the base region width and the doping concentration of the diode according to the packaging structure.
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| CN202111177038.2A CN113964260B (en) | 2021-10-09 | 2021-10-09 | Diode packaging method |
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| CN202111177038.2A CN113964260B (en) | 2021-10-09 | 2021-10-09 | Diode packaging method |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199187A (en) * | 2013-04-19 | 2013-07-10 | 安徽三安光电有限公司 | Light-emitting diode (LED) encapsulating baseplate and encapsulating structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7339198B2 (en) * | 2004-01-16 | 2008-03-04 | Yu-Nung Shen | Light-emitting diode chip package body and packaging method thereof |
| TWI389295B (en) * | 2009-02-18 | 2013-03-11 | Chi Mei Lighting Tech Corp | Light-emitting diode light source module |
| CN102760822B (en) * | 2011-04-27 | 2015-02-04 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulation structure and manufacturing method thereof |
| TWM441261U (en) * | 2012-05-18 | 2012-11-11 | Truelight Corp | Laser diode array die structure and has the laser diode array die structure of package device |
| CN102916112B (en) * | 2012-10-31 | 2015-07-29 | 佛山市国星光电股份有限公司 | A kind of high power LED device and manufacture method thereof |
| CN208738300U (en) * | 2018-05-09 | 2019-04-12 | 深圳市聚飞光电股份有限公司 | LED support and LED with circuit |
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| CN103199187A (en) * | 2013-04-19 | 2013-07-10 | 安徽三安光电有限公司 | Light-emitting diode (LED) encapsulating baseplate and encapsulating structure and manufacturing method thereof |
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