CN202049955U - Polycrystalline packaging structure using constant voltage power supply and used for increasing magnitude of current - Google Patents

Polycrystalline packaging structure using constant voltage power supply and used for increasing magnitude of current Download PDF

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Publication number
CN202049955U
CN202049955U CN 201020642948 CN201020642948U CN202049955U CN 202049955 U CN202049955 U CN 202049955U CN 201020642948 CN201020642948 CN 201020642948 CN 201020642948 U CN201020642948 U CN 201020642948U CN 202049955 U CN202049955 U CN 202049955U
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colloid
type frame
circulating type
unit
mentioned
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Chinese (zh)
Inventor
钟嘉珽
戴世能
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Paragon Semiconductor Lighting Technology Co Ltd
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Paragon Semiconductor Lighting Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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Abstract

A polycrystalline packaging structure using constant voltage power supply and used for increasing magnitude of current comprises a substrate unit, a luminescence unit, a current limiting unit, a frame unit and a packaging unit, wherein the substrate unit is provided with a first crystal placing area and a second crystal placing area, the luminescence unit is provided with a plurality of light emitting diode chips electrically arranged on the first crystal placing area, the current limiting unit is provided with a plurality of current limiting chips electrically arranged on the second crystal placing area and electrically connected with the luminescence unit, the frame unit is provided with a first encircling frame colloid surrounding the light emitting diode chips and a second encircling frame colloid surrounding the current limiting chips, and the packaging unit is provided with a first packaging colloid surrounded by the first encircling frame colloid and used for covering the light emitting diode chips and a second packaging colloid surrounded by the second encircling frame colloid and used for covering the current limiting chips. The polycrystalline packaging structure can use the constant voltage power supply as a power supply, and can increase the magnitude of current.

Description

Use the constant voltage supply supply and be used to increase the polycrystalline encapsulating structure of the magnitude of current
Technical field
The utility model relates to a kind of polycrystalline encapsulating structure, refers to a kind of polycrystalline encapsulating structure that uses the constant voltage supply supply and be used to increase the magnitude of current especially.
Background technology
The creation of electric light can be described as the life style that has changed the whole mankind up hill and dale, if our life does not have electric light, when night or weather conditions are not good, the work of all will stop; If be subject to illumination, building construction mode or human life style are thoroughly changed, therefore the whole mankind will can't improve, the age that stays on and fall behind.Therefore, today employed on the market lighting apparatus, for example: fluorescent lamp, tungsten lamp even the more popular till now electricity-saving lamp of being accepted are widely used in the middle of the daily life all.Yet this type of electric light has fast, the high power consumption of optical attenuation mostly, be easy to generate high heat, the life-span is short, frangible or shortcoming such as difficult recovery.Therefore, the encapsulating structure that uses light-emitting diode in response to and give birth to.
The utility model content
Technical problem to be solved in the utility model is to provide a kind of polycrystalline encapsulating structure, and it can use the constant voltage supply supply as the source of power supply and can be according to the light-emitting diode chip for backlight unit of varying number to increase magnitude of current supply.In order to solve the problems of the technologies described above, the utility model provides a kind of polycrystalline encapsulating structure that uses the constant voltage supply supply and be used to increase the magnitude of current, it comprises: a base board unit, and it has first crystal area, and second crystal area that is positioned at this substrate body upper surface that a substrate body, is positioned at this substrate body upper surface; One luminescence unit, it has a plurality of light-emitting diode chip for backlight unit that electrically are arranged on this first crystal area; One current limliting unit, it has a plurality of current limliting chips that electrically are arranged on this second crystal area, and a plurality of current limliting chips are electrically connected at this luminescence unit; One frame unit, it has first a circulating type frame colloid and that forms in this substrate body upper surface around ground and forms in the second circulating type frame colloid of this substrate body upper surface around ground, this first circulating type frame colloid is around above-mentioned a plurality of light-emitting diode chip for backlight unit, to form a spacing space of first colloid corresponding to this first crystal area, and this second circulating type frame colloid is around a plurality of current limliting chips, to form a spacing space of second colloid corresponding to this second crystal area; One encapsulation unit, it has one and is filled in this spacing space of first colloid and is filled in this spacing space of second colloid to cover second packing colloid of a plurality of current limliting chips with first packing colloid and that covers above-mentioned a plurality of light-emitting diode chip for backlight unit.
The utility model also provides a kind of polycrystalline encapsulating structure that uses the constant voltage supply supply and be used to increase the magnitude of current, it comprises: a base board unit, and it has first crystal area, and second crystal area that is positioned at this substrate body upper surface that a substrate body, two are positioned at this substrate body upper surface; One luminescence unit, it has at least one first light emitting module and at least one second light emitting module that is used to produce second kind of colour temperature that is used to produce first kind of colour temperature, above-mentioned at least one first light emitting module has a plurality of first light-emitting diode chip for backlight unit that electrically are arranged on one first crystal area wherein, and above-mentioned at least one second light emitting module has a plurality of second light-emitting diode chip for backlight unit that electrically are arranged on other one first crystal area; One current limliting unit, it has a plurality of current limliting chips that electrically are arranged on this second crystal area, and a plurality of current limliting chips are electrically connected at this luminescence unit; One frame unit, it has two first circulating type frame colloids and that form in this substrate body upper surface around ground and forms in the second circulating type frame colloid of this substrate body upper surface around ground, above-mentioned two first circulating type frame colloids are respectively around above-mentioned at least one first light emitting module and above-mentioned at least one second light emitting module, to form the spacing space of first colloid of two corresponding above-mentioned two first crystal areas respectively, and this second circulating type frame colloid is around a plurality of current limliting chips, to form a spacing space of second colloid corresponding to this second crystal area; And an encapsulation unit, it has two and is filled in respectively in above-mentioned two the first spacing spaces of colloid and is filled in this spacing space of second colloid to cover second packing colloid of a plurality of current limliting chips with first packing colloid and that covers above-mentioned at least one first light emitting module and above-mentioned at least one second light emitting module respectively.
The utility model provides a kind of polycrystalline encapsulating structure that uses the constant voltage supply supply and be used to increase the magnitude of current again, it comprises: a base board unit, and it has first crystal area, and second crystal area that is positioned at this substrate body upper surface that a substrate body, two are positioned at this substrate body upper surface; One luminescence unit, it has at least one first light emitting module and at least one second light emitting module that is used to produce second kind of colour temperature that is used to produce first kind of colour temperature, wherein above-mentioned at least one first light emitting module has a plurality of first light-emitting diode chip for backlight unit that electrically are arranged on one first crystal area wherein, and above-mentioned at least one second light emitting module has a plurality of second light-emitting diode chip for backlight unit that electrically are arranged on other one first crystal area; One current limliting unit, it has a plurality of current limliting chips that electrically are arranged on this second crystal area, and a plurality of current limliting chips are electrically connected at this luminescence unit; One frame unit, it has two first circulating type frame colloids and that form in this substrate body upper surface around ground and forms in the second circulating type frame colloid of this substrate body upper surface around ground, and one of them first circulating type frame colloid is around the another one first circulating type frame colloid, above-mentioned two first circulating type frame colloids are respectively around above-mentioned at least one first light emitting module and above-mentioned at least one second light emitting module, to form the spacing space of first colloid of two corresponding above-mentioned two first crystal areas respectively, above-mentioned at least one second light emitting module is between above-mentioned two first circulating type frame colloids, and this second circulating type frame colloid is around a plurality of current limliting chips, to form a spacing space of second colloid corresponding to this second crystal area; And an encapsulation unit, it has two and is filled in respectively in above-mentioned two the first spacing spaces of colloid and is filled in this spacing space of second colloid to cover second packing colloid of a plurality of current limliting chips with first packing colloid and that covers above-mentioned at least one first light emitting module and above-mentioned at least one second light emitting module respectively.
Therefore, the beneficial effects of the utility model are: except can be by the design of " a plurality of light-emitting diode chip for backlight unit and a plurality of current limliting chip are electrically connected on the same base board unit ", so that polycrystalline encapsulating structure of the present utility model can use the source of constant voltage supply supply as power supply, and can reach according to the light-emitting diode chip for backlight unit that uses varying number so that the purpose of different magnitude of current supplies to be provided.
For enabling further to understand feature of the present utility model and technology contents, see also following about detailed description of the present utility model and accompanying drawing, yet accompanying drawing only provide with reference to and the explanation usefulness, be not to be used for the utility model is limited.
Description of drawings
Figure 1A is the schematic perspective view of the utility model embodiment one;
Figure 1B is the side-looking generalized section of the utility model embodiment one;
Fig. 1 C is the schematic top plan view of the new embodiment one of this practicality;
Fig. 1 D is the functional block diagram of the utility model embodiment one;
Fig. 1 E is the circuit diagram that the utility model embodiment one selects the current limliting chip of a 350mA for use;
Fig. 1 F is the circuit diagram that the utility model embodiment one selects the current limliting chip of two 350mA for use;
Fig. 1 G is the circuit diagram that the utility model embodiment one selects the current limliting chip of three 350mA for use;
Fig. 2 A is the schematic top plan view of the utility model embodiment two;
Fig. 2 B is the side-looking generalized section of the utility model embodiment two;
Fig. 3 is the schematic top plan view of the utility model embodiment three;
Fig. 4 A is the schematic top plan view of the utility model embodiment four;
Fig. 4 B is the side-looking generalized section of the utility model embodiment four;
Fig. 5 A is the schematic top plan view of the utility model embodiment five;
Fig. 5 B is the side-looking generalized section of the utility model embodiment five;
Fig. 6 A is the schematic top plan view of the utility model embodiment six;
Fig. 6 B is the side-looking generalized section of the utility model embodiment six;
Fig. 7 A is the schematic top plan view of the utility model embodiment seven;
Fig. 7 B is the side-looking generalized section of the utility model embodiment seven;
Fig. 8 is the schematic top plan view of the utility model embodiment eight;
Fig. 9 A is the schematic top plan view of the utility model embodiment nine;
Fig. 9 B is the side-looking generalized section of the utility model embodiment nine;
Figure 10 is the side-looking generalized section of the utility model embodiment ten;
Figure 11 uses the local schematic top plan view of a plurality of standby weld pads for the utility model.
[main element description of reference numerals]
Constant voltage supply supply S
Polycrystalline encapsulating structure Z
Base board unit 1 substrate body 10
Circuit substrate 100
Heat dissipating layer 101
Conductive welding pad 102
Anodal weld pad P
Negative pole weld pad N
Insulating barrier 103
First crystal area 11
Second crystal area 12
Heat insulation slit 13
Luminescence unit 2 light-emitting diode chip for backlight unit 20
Anodal 201
Negative pole 202
The first light emitting module 2a, the first light-emitting diode chip for backlight unit 20a
The second light emitting module 2b, the first light-emitting diode chip for backlight unit 20b
Current limliting unit C current limliting chip C1
Frame unit 3 first circulating type frame colloids 30
The first circulating type frame colloid 30a
The first circulating type frame colloid 30b
Circular arc tangential line T
Angle θ
Height H
Width D
The spacing space 300 of first colloid
The second circulating type frame colloid 31
The spacing space 310 of second colloid
Encapsulation unit 4 first packing colloids 40
The first packing colloid 40a
The first packing colloid 40b
Second packing colloid 41
Lead unit W lead W1
First group of ray structure N1
Second group of ray structure N2
Blue light beam L1
White light beam L2
Embodiment
Embodiment one
Shown in Figure 1A to Fig. 1 D, the utility model embodiment one provides a kind of polycrystalline encapsulating structure Z that uses constant voltage supply supply S and be used to increase the magnitude of current, and it comprises: a base board unit 1, a luminescence unit 2, a current limliting unit C, a frame unit 3 and an encapsulation unit 4.
Base board unit 1 has first crystal area 11, and second crystal area 12 that is positioned at substrate body 10 upper surfaces that a substrate body 10, is positioned at substrate body 10 upper surfaces.For instance, substrate body 10 can have a circuit substrate 100, and is arranged at the heat dissipating layer 101 of circuit substrate 100 bottoms, a plurality of conductive welding pad 102 that is arranged at circuit substrate 100 upper surfaces, and one is arranged at circuit substrate 100 upper surfaces and is used to expose the insulating barrier 103 of a plurality of conductive welding pad 102.
Luminescence unit 2 has a plurality of light-emitting diode chip for backlight unit 20 (the not naked crystalline substance of encapsulated LED) that electrically are arranged on first crystal area 11.For instance, each light-emitting diode chip for backlight unit 20 can be a blue led chips, and each light-emitting diode chip for backlight unit 20 can pass through the mode of routing (wire-bonding), on first crystal area 11 that is arranged at base board unit 1 electrically.
Current limliting unit C has a plurality of current limliting chip C1 (only disclosing a current limliting chip in the accompanying drawing of the present utility model represents) that electrically are arranged on second crystal area 12.A plurality of current limliting chip C1 are electrically connected at luminescence unit 2, use to luminescence unit 2 so that a particular current to be provided.For instance, a plurality of current limliting chip C1 can be by the mode of routing, with on second crystal area 12 that electrically is arranged at base board unit 1 and be electrically connected at and decide (shown in Fig. 1 D) between voltage source supplies device S and the luminescence unit 2.In addition, because a plurality of current limliting chip C1 can be used as the bridge of deciding between voltage source supplies device S and the luminescence unit 2, so that luminescence unit 2 can obtain stable electric current supply from deciding voltage source supplies device S.
Frame unit 3 has first a circulating type frame colloid 30 and that can be by the mode of coating forms in substrate body 10 upper surfaces around ground can form in the second circulating type frame colloid 31 of substrate body 10 upper surfaces by the mode of coating around ground.The first circulating type frame colloid 30 is around a plurality of light-emitting diode chip for backlight unit 20, to form one corresponding to the spacing space 300 of first colloid of first crystal area 11, and the second circulating type frame colloid 31 is around a plurality of current limliting chip C1, to form one corresponding to the spacing space 310 of second colloid of second crystal area 12.In addition, the first circulating type frame colloid 30 and the second circulating type frame colloid, 31 specific ranges separated from one another.
For instance, the manufacture method of the first circulating type frame colloid 30 (or second circulating type frame colloid 31) comprises following several steps at least: (1) at first is coated with liquid glue material (figure does not show) in substrate body 10 upper surfaces around ground.Liquid glue material can optionally be surrounded into a predetermined shape (for example circular, square, rectangle or the like), and be coated with liquid glue material around ground and be about identical position, so starting point and terminating point have the outward appearance of the trickle protrusion of colloid in the starting point of substrate body 10 upper surfaces and terminating point; (2) then, solidify liquid glue material again to form the first circulating type frame colloid 30.Therefore, the upper surface of the first circulating type frame colloid 30 can present a circular arc, the first circulating type frame colloid 30 can be between 40 to 50 degree with respect to the angle θ of the circular arc tangential line T of substrate body 10 upper surfaces, the end face of the first circulating type frame colloid 30 can be between 0.3 to 0.7mm with respect to the height H of substrate body 10 upper surfaces, the width D of the first circulating type frame colloid, 30 bottoms can be between 1.5 to 3mm, the thixotropic index of the first circulating type frame colloid 30 can be between 4 to 6, and the first circulating type frame colloid 30 can be a white hot sclerosis frame colloid that is mixed with inorganic additive.
Encapsulation unit 4 has one and is filled in the spacing space of first colloid 300 and is filled in the spacing space 310 of second colloid to cover second packing colloid 41 of a plurality of current limliting chip C1 with first packing colloid 40 and that covers a plurality of light-emitting diode chip for backlight unit 20.First packing colloid 40 and second packing colloid, 41 specific ranges separated from one another, and the first circulating type frame colloid 30 and second packing colloid, 41 specific ranges separated from one another.For instance, because first packing colloid 40 can be a printing opacity colloid (for example fluorescent colloid or transparent colloid), therefore the blue light beam L1 that cast out of a plurality of light-emitting diode chip for backlight unit 20 (for example a plurality of blue led chips) can pass first packing colloid 40 (for example fluorescent colloid), to produce the white light beam L2 in similar fluorescent lamp source.In addition, second packing colloid 41 can be a light tight colloid, and it is used to cover a plurality of current limliting chip C1, is subjected to the irradiation of white light beam L2 and produces the situation of damage to avoid a plurality of current limliting chip C1.
Base board unit 1 further includes: at least one heat insulation slit 13 that runs through substrate body 10, and heat insulation slit 13 can be between luminescence unit 2 and the current limliting unit C or between the first circulating type frame colloid 30 and the second circulating type frame colloid 31.Therefore, use by heat insulation slit 13, the heat that can significantly reduce between current limliting unit C and the luminescence unit 2 passes the path, and then makes the utility model can effectively slow down the speed that heat that one or more current limliting chip C1 by current limliting unit C produced conducts to luminescence unit 2.
Shown in Fig. 1 E to Fig. 1 G, for instance, when a plurality of light-emitting diode chip for backlight unit that are cascaded 20 needed the electric current supply of 350mA, the designer can select for use the current limliting chip C1 of a 350mA to reach; When two groups of a plurality of light-emitting diode chip for backlight unit that are cascaded 20 need the electric current supply of 700mA, the designer can select the current limliting chip C1 of two 350mA for use, comes to reach respectively a plurality of light-emitting diode chip for backlight unit that the is cascaded 20 needed magnitudes of current of each group in parallel; When three groups of a plurality of light-emitting diode chip for backlight unit that are cascaded 20 need the electric current supply of 1050mA, the designer can select the current limliting chip C1 of three 350mA for use, comes to reach respectively a plurality of light-emitting diode chip for backlight unit that the is cascaded 20 needed magnitudes of current of each group in parallel.The rest may be inferred, can reach according to using not the light-emitting diode chip for backlight unit 20 of number and varying number on the same group, to reach the purpose that different magnitude of current supplies are provided.In other words, the utility model not only can directly use constant voltage supply supply S to obtain required electric power, and the utility model also can increase the required magnitude of current of luminescence unit 2 by above-mentioned a plurality of current limliting chip C1 that are connected in parallel.
Embodiment two
By the comparison of Fig. 2 A and Figure 1A (or Fig. 2 B and Figure 1B), be with the different of embodiment one: the base board unit 1 of embodiment two can omit the making of heat insulation slit 13.For instance, when current limliting unit C can not produce too much heat, then can consider to use the scheme of the utility model embodiment two.
Embodiment three
Comparison by Fig. 3 and Fig. 1 C, be with the different of embodiment one: in embodiment three, current limliting unit C is between the first circulating type frame colloid 30 and the second circulating type frame colloid 31, the second circulating type frame colloid 31 is around the first circulating type frame colloid 30, second packing colloid 41 is around first packing colloid 40, and the first circulating type frame colloid 30 and second packing colloid 41 are connected with each other.In other words, 30 in the first circulating type frame colloid centers on a plurality of light-emitting diode chip for backlight unit 20, and the second circulating type frame colloid 31 centers on a plurality of light-emitting diode chip for backlight unit 20, the first circulating type frame colloid 30 and a plurality of current limliting chip C1 simultaneously, and therefore the first circulating type frame colloid 30 and the second circulating type frame colloid 31 are arranged in a similar concentrically ringed pattern.
Embodiment four
Shown in Fig. 4 A and Fig. 4 B, the utility model embodiment four provides a kind of use constant voltage supply supply polycrystalline encapsulating structure Z of (figure does not show), and it comprises: a base board unit 1, a luminescence unit 2, a current limliting unit C, a frame unit 3 and an encapsulation unit 4.
Base board unit 1 has first crystal area 11, and second crystal area 12 that is positioned at substrate body 10 upper surfaces that a substrate body 10, two are positioned at substrate body 10 upper surfaces.For instance, substrate body 10 can have a circuit substrate 100, and is arranged at the heat dissipating layer 101 of circuit substrate 100 bottoms, a plurality of conductive welding pad 102 that is arranged at circuit substrate 100 upper surfaces, and one is arranged at circuit substrate 100 upper surfaces and is used to expose the insulating barrier 103 of a plurality of conductive welding pad 102.
Luminescence unit 2 has at least one first light emitting module 2a and at least one second light emitting module 2b that is used to produce second kind of colour temperature that is used to produce first kind of colour temperature.The first light emitting module 2a has a plurality of first light-emitting diode chip for backlight unit 20a that electrically are arranged on one first crystal area 11 wherein, and the second light emitting module 2b has a plurality of second light-emitting diode chip for backlight unit 20b that electrically are arranged on other one first crystal area 11.
Current limliting unit C has a plurality of current limliting chip C1 that electrically are arranged on second crystal area 12.A plurality of current limliting chip C1 are electrically connected at luminescence unit 2, use to the first light emitting module 2a and the second light emitting module 2b respectively so that a specific and stable electric current to be provided.
Frame unit 3 has two first circulating type frame colloids 30 and that form in substrate body 10 upper surfaces around ground and forms in the second circulating type frame colloid 31 of substrate body 10 upper surfaces around ground.Two first circulating type frame colloids 30 are respectively around the first light emitting module 2a and the second light emitting module 2b, with the spacing space 300 of first colloid that forms two corresponding two first crystal areas 11 respectively, and the second circulating type frame colloid 31 is around a plurality of current limliting chip C1, to form one corresponding to the spacing space 310 of second colloid of second crystal area 12.In addition, two first circulating type frame colloid 30 preset distances separated from one another, and two first circulating type frame colloids 30 are arranged on the substrate body 10 with being connected in parallel to each other, in addition each first circulating type frame colloid 30 and the second circulating type frame colloid, 31 specific ranges separated from one another.
Encapsulation unit 4 has two and is filled in respectively in the spacing spaces 300 of two first colloids and is filled in the spacing space 310 of second colloid to cover second packing colloid 41 of a plurality of current limliting chip C1 with first packing colloid (40a, 40b) and that covers the first light emitting module 2a and the second light emitting module 2b respectively.Each first packing colloid (40a, 40b) and second packing colloid, 41 specific ranges separated from one another, and each first circulating type frame colloid 30 and second packing colloid, 41 specific ranges separated from one another.For instance, wherein one first packing colloid 40a can be a fluorescent colloid with one first color, other one first packing colloid 40b can be a fluorescent colloid with one second color, and second packing colloid 41 can be a light tight colloid with shaded effect.
Base board unit 1 further includes: at least one heat insulation slit 13 that runs through substrate body 10, and heat insulation slit 13 can be between luminescence unit 2 and the current limliting unit C or wherein between the one first circulating type frame colloid 30 and the second circulating type frame colloid 31, the function of wherein heat insulation slit 13 is identical with embodiment one.
First group of ray structure N1 can comprise: substrate body 10, a plurality of first light-emitting diode chip for backlight unit 20a, wherein one first circulating type frame colloid 30 and one first packing colloid 40a wherein.Second group of ray structure N2 can comprise: substrate body 10, a plurality of second light-emitting diode chip for backlight unit 20b, other one first circulating type frame colloid 30 and other one first packing colloid 40b.
Embodiment five
Comparison by Fig. 5 A and Fig. 4 A (or Fig. 5 B and Fig. 4 B) is with the different of embodiment four: two first circulating type frame colloids 30 of the frame unit 3 of embodiment five can be connected in parallel to each other and arrange and link together.
Embodiment six
Comparison by Fig. 6 A and Fig. 5 A (or Fig. 6 B and Fig. 5 B) is with the different of embodiment five: in embodiment six, each first circulating type frame colloid 30 can be fluorescent colloid.In other words, the utility model can optionally add fluorescent material along with different demands in each first circulating type frame colloid 30, and then effectively reduces the blanking bar situation between two first packing colloids (40a, 40b) that betide encapsulation unit 4.
Embodiment seven
Shown in Fig. 7 A and Fig. 7 B, the utility model embodiment seven provides a kind of use constant voltage supply supply (figure does not show) and is used to increase the polycrystalline encapsulating structure Z of the magnitude of current, and it comprises: a base board unit 1, a luminescence unit 2, a current limliting unit C, a frame unit 3 and an encapsulation unit 4.
Base board unit 1 has first crystal area 11, and second crystal area 12 that is positioned at substrate body 10 upper surfaces that a substrate body 10, two are positioned at substrate body 10 upper surfaces.Luminescence unit 2 has at least one first light emitting module 2a and at least one second light emitting module 2b that is used to produce second kind of colour temperature that is used to produce first kind of colour temperature.The first light emitting module 2a has a plurality of first light-emitting diode chip for backlight unit 20a that electrically are arranged on one first crystal area 11 wherein, and the second light emitting module 2b has a plurality of second light-emitting diode chip for backlight unit 20b that electrically are arranged on other one first crystal area 11.Current limliting unit C has a plurality of current limliting chip C1 that electrically are arranged on second crystal area 12.A plurality of current limliting chip C1 are electrically connected at luminescence unit 2.
Frame unit 3 has two first circulating type frame colloids (30a, 30b) and that form in substrate body 10 upper surfaces around ground and forms in the second circulating type frame colloid 31 of substrate body 10 upper surfaces around ground, and one of them first circulating type frame colloid 30b is around the another one first circulating type frame colloid 30a, and therefore two first circulating type frame colloids (30a, 30b) are arranged in a similar concentrically ringed pattern.Two first circulating type frame colloids (30a, 30b) are respectively around the first light emitting module 2a and the second light emitting module 2b, with the spacing space 300 of first colloid that forms two corresponding two first crystal areas 11 respectively, the second light emitting module 2b is positioned between two the first circulating type frame colloids (30a, 30b), and the second circulating type frame colloid 31 is around a plurality of current limliting chip C1, to form one corresponding to the spacing space 310 of second colloid of second crystal area 12.
Encapsulation unit 4 has two and is filled in respectively in the spacing spaces 300 of two first colloids and is filled in the spacing space 310 of second colloid to cover second packing colloid 41 of a plurality of current limliting chip C1 with first packing colloid (40a, 40b) and that covers the first light emitting module 2a and the second light emitting module 2b respectively.
First group of ray structure N1 can comprise: substrate body 10, a plurality of first light-emitting diode chip for backlight unit 20a, wherein one first circulating type frame colloid 30a and one first packing colloid 40a wherein.Second group of ray structure N2 can comprise: substrate body 10, a plurality of second light-emitting diode chip for backlight unit 20b, other one first circulating type frame colloid 30b and other one first packing colloid 40b.First group of ray structure N1 with low colour temperature is set at inner ring, and second group of ray structure N2 with higher color temperature then is arranged at the outer ring.Embodiment eight
Comparison by Fig. 8 and Fig. 7 A, be with the different of embodiment seven: in embodiment eight, put upside down mutually the position of first group of ray structure N1 and second group of ray structure N2, therefore the first group of ray structure N1 that has low colour temperature is set at the outer ring, and second group of ray structure N2 with higher color temperature then is arranged at inner ring.
Embodiment nine
Comparison by Fig. 9 A and Fig. 7 A (or Fig. 9 B and Fig. 7 B) is with the different of embodiment seven: in embodiment nine, two first circulating type frame colloids (30a, 30b) all can be fluorescent colloid.In other words, the utility model can optionally add fluorescent material along with different demands in two first circulating type frame colloids (30a, 30b), so that light source (shown in the arrow that makes progress among Fig. 9 B) can be led between two first packing colloids (40a, 40b), and then reduce the blanking bar situation that betides between two first packing colloids (40a, 40b).
Embodiment ten
By the comparison of Figure 10 and Fig. 7 B, be with the different of embodiment seven: in embodiment ten, the first circulating type frame colloid 30a of inner ring can be fluorescent colloid, and the first circulating type frame colloid 30b of outer ring can be reflective colloid.In other words, the utility model can optionally add fluorescent material along with different demands in the first circulating type frame colloid 30a of inner ring, so that light source (shown in the arrow that makes progress among Figure 10) can be led between two first packing colloids (40a, 40b), and then reduce the blanking bar situation that betides between two first packing colloids (40a, 40b).In addition, by " the first circulating type frame colloid 30b of outer ring is reflective colloid " and design so that the light source that the utility model is launched can obtain preferable spotlight effect.
In addition, as shown in figure 11, in embodiment one to embodiment ten, base board unit 1 has a plurality of anodal weld pad P and a plurality of negative pole weld pad N that are arranged at substrate body 10 upper surfaces that are arranged at substrate body 10 upper surfaces, each light-emitting diode chip for backlight unit 20 has anodal 201 and one negative pole 202, among positive pole 201 corresponding a plurality of anodal weld pad P of each light-emitting diode chip for backlight unit 20 at least two, and among negative pole 202 corresponding a plurality of negative pole weld pad N of each light-emitting diode chip for backlight unit 20 at least two.In addition, lead unit W, it has many lead W1.Per two lead W1 be electrically connected between the positive pole 201 of each light-emitting diode chip for backlight unit 20 and among at least two anodal weld pad P one of them respectively and be electrically connected at the negative pole 202 of each light-emitting diode chip for backlight unit 20 and among at least two negative pole weld pad N one of them between.
Because the positive pole of each light-emitting diode chip for backlight unit 201 has at least one standby anodal weld pad P and at least one standby negative pole weld pad N respectively with negative pole 202, so when terminal the beating at (being welded on) one of them anodal weld pad P or negative pole weld pad N of lead W1 gone up and (caused floating the weldering during failure, be not produce between lead W1 and " anodal weld pad P or the negative pole weld pad N " to electrically connect), the producer need not remove because of the routing failure and be formed at the lip-deep welding slag of anodal weld pad P (or the lip-deep welding slag of negative pole weld pad N), the end of lead W1 can be beaten on the anodal weld pad P of another one (or another one negative pole weld pad N), with the time (promoting the efficient of routing) of saving routing and the yield that increases routing.
In sum, the utility model is except can be by the design of " a plurality of light-emitting diode chip for backlight unit and a plurality of current limliting chip are electrically connected on the same base board unit ", so that polycrystalline encapsulating structure of the present utility model can use the source of constant voltage supply supply as power supply, and can reach according to the light-emitting diode chip for backlight unit that uses varying number so that the purpose of different magnitude of current supplies to be provided.
The above only is a preferable possible embodiments of the present utility model, and is non-so limit to protection range of the present utility model, so the equivalence techniques that all utilizations specification of the present utility model and accompanying drawing content are done changes, all is contained in the protection range of the present utility model.

Claims (10)

1. a polycrystalline encapsulating structure that uses the constant voltage supply supply and be used to increase the magnitude of current is characterized in that, comprising:
One base board unit, it has first crystal area, and second crystal area that is positioned at this substrate body upper surface that a substrate body, is positioned at this substrate body upper surface;
One luminescence unit, it has a plurality of light-emitting diode chip for backlight unit that electrically are arranged on this first crystal area;
One current limliting unit, it has a plurality of current limliting chips that electrically are arranged on this second crystal area, and a plurality of current limliting chips are electrically connected at this luminescence unit;
One frame unit, it has first a circulating type frame colloid and that forms in this substrate body upper surface around ground and forms in the second circulating type frame colloid of this substrate body upper surface around ground, this first circulating type frame colloid is around above-mentioned a plurality of light-emitting diode chip for backlight unit, to form a spacing space of first colloid corresponding to this first crystal area, and this second circulating type frame colloid is around a plurality of current limliting chips, to form a spacing space of second colloid corresponding to this second crystal area; And
One encapsulation unit, it has one and is filled in this spacing space of first colloid and is filled in this spacing space of second colloid to cover second packing colloid of a plurality of current limliting chips with first packing colloid and that covers above-mentioned a plurality of light-emitting diode chip for backlight unit.
2. use constant voltage supply supply as claimed in claim 1 and be used to increase the polycrystalline encapsulating structure of the magnitude of current, it is characterized in that, each light-emitting diode chip for backlight unit is a blue led chips, this first packing colloid is a fluorescent colloid or a transparent colloid, this second packing colloid is a light tight colloid, and above-mentioned a plurality of current limliting chip is parallel with one another.
3. use constant voltage supply supply as claimed in claim 1 and be used to increase the polycrystalline encapsulating structure of the magnitude of current, it is characterized in that, the upper surface of this first circulating type frame colloid is a circular arc, this first circulating type frame colloid with respect to the angle of the circular arc tangential line of this substrate body upper surface between 40 to 50 degree, the end face of this first circulating type frame colloid with respect to the height of this substrate body upper surface between 0.3 to 0.7mm, the width of this first circulating type frame colloid bottom is between 1.5 to 3mm, the thixotropic index of this first circulating type frame colloid is between 4 to 6, and this first circulating type frame colloid is one to be mixed with the white hot sclerosis frame colloid of inorganic additive.
4. use constant voltage supply supply as claimed in claim 1 and be used to increase the polycrystalline encapsulating structure of the magnitude of current, it is characterized in that, this base board unit has a plurality of anodal weld pad and a plurality of negative pole weld pads that are arranged at this substrate body upper surface that are arranged at this substrate body upper surface, each light-emitting diode chip for backlight unit has an anodal and negative pole, in anodal corresponding above-mentioned a plurality of anodal weld pads of each light-emitting diode chip for backlight unit at least two, and in the corresponding above-mentioned a plurality of negative pole weld pads of the negative pole of each light-emitting diode chip for backlight unit at least two.
5. use constant voltage supply supply as claimed in claim 4 and be used to increase the polycrystalline encapsulating structure of the magnitude of current, it is characterized in that, further comprise: a lead unit, it has many leads, wherein per two leads be electrically connected between the positive pole of each light-emitting diode chip for backlight unit and in above-mentioned at least two anodal weld pads one of them respectively and be electrically connected at the negative pole of each light-emitting diode chip for backlight unit and in above-mentioned at least two negative pole weld pads one of them between.
6. use constant voltage supply supply as claimed in claim 1 and be used to increase the polycrystalline encapsulating structure of the magnitude of current, it is characterized in that, this first circulating type frame colloid and this second circulating type frame colloid specific range separated from one another, this first packing colloid and this second packing colloid specific range separated from one another, and this first circulating type frame colloid and this second packing colloid specific range separated from one another.
7. use constant voltage supply supply as claimed in claim 1 and be used to increase the polycrystalline encapsulating structure of the magnitude of current, it is characterized in that, this second circulating type frame colloid is around this first circulating type frame colloid, this second packing colloid is around this first packing colloid, and this first circulating type frame colloid and this second packing colloid are connected with each other.
8. use constant voltage supply supply as claimed in claim 1 and be used to increase the polycrystalline encapsulating structure of the magnitude of current, it is characterized in that, this base board unit has at least one heat insulation slit that runs through this substrate body, and above-mentioned at least one heat insulation slit is between this luminescence unit and this current limliting unit or between this first circulating type frame colloid and this second circulating type frame colloid.
9. a polycrystalline encapsulating structure that uses the constant voltage supply supply and be used to increase the magnitude of current is characterized in that, comprising:
One base board unit, it has first crystal area, and second crystal area that is positioned at this substrate body upper surface that a substrate body, two are positioned at this substrate body upper surface;
One luminescence unit, it has at least one first light emitting module and at least one second light emitting module that is used to produce second kind of colour temperature that is used to produce first kind of colour temperature, above-mentioned at least one first light emitting module has a plurality of first light-emitting diode chip for backlight unit that electrically are arranged on one first crystal area wherein, and above-mentioned at least one second light emitting module has a plurality of second light-emitting diode chip for backlight unit that electrically are arranged on other one first crystal area;
One current limliting unit, it has a plurality of current limliting chips that electrically are arranged on this second crystal area, and a plurality of current limliting chips are electrically connected at this luminescence unit;
One frame unit, it has two first circulating type frame colloids and that form in this substrate body upper surface around ground and forms in the second circulating type frame colloid of this substrate body upper surface around ground, above-mentioned two first circulating type frame colloids are respectively around above-mentioned at least one first light emitting module and above-mentioned at least one second light emitting module, to form the spacing space of first colloid of two corresponding above-mentioned two first crystal areas respectively, and this second circulating type frame colloid is around a plurality of current limliting chips, to form a spacing space of second colloid corresponding to this second crystal area; And
One encapsulation unit, it has two and is filled in respectively in above-mentioned two the first spacing spaces of colloid and is filled in this spacing space of second colloid to cover second packing colloid of a plurality of current limliting chips with first packing colloid and that covers above-mentioned at least one first light emitting module and above-mentioned at least one second light emitting module respectively.
10. a polycrystalline encapsulating structure that uses the constant voltage supply supply and be used to increase the magnitude of current is characterized in that, comprising:
One base board unit, it has first crystal area, and second crystal area that is positioned at this substrate body upper surface that a substrate body, two are positioned at this substrate body upper surface;
One luminescence unit, it has at least one first light emitting module and at least one second light emitting module that is used to produce second kind of colour temperature that is used to produce first kind of colour temperature, wherein above-mentioned at least one first light emitting module has a plurality of first light-emitting diode chip for backlight unit that electrically are arranged on one first crystal area wherein, and above-mentioned at least one second light emitting module has a plurality of second light-emitting diode chip for backlight unit that electrically are arranged on other one first crystal area;
One current limliting unit, it has a plurality of current limliting chips that electrically are arranged on this second crystal area, and a plurality of current limliting chips are electrically connected at this luminescence unit;
One frame unit, it has two first circulating type frame colloids and that form in this substrate body upper surface around ground and forms in the second circulating type frame colloid of this substrate body upper surface around ground, and one of them first circulating type frame colloid is around the another one first circulating type frame colloid, above-mentioned two first circulating type frame colloids are respectively around above-mentioned at least one first light emitting module and above-mentioned at least one second light emitting module, to form the spacing space of first colloid of two corresponding above-mentioned two first crystal areas respectively, above-mentioned at least one second light emitting module is between above-mentioned two first circulating type frame colloids, and this second circulating type frame colloid is around a plurality of current limliting chips, to form a spacing space of second colloid corresponding to this second crystal area; And
One encapsulation unit, it has two and is filled in respectively in above-mentioned two the first spacing spaces of colloid and is filled in this spacing space of second colloid to cover second packing colloid of a plurality of current limliting chips with first packing colloid and that covers above-mentioned at least one first light emitting module and above-mentioned at least one second light emitting module respectively.
CN 201020642948 2010-12-02 2010-12-02 Polycrystalline packaging structure using constant voltage power supply and used for increasing magnitude of current Expired - Lifetime CN202049955U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103165589A (en) * 2011-12-08 2013-06-19 东莞柏泽光电科技有限公司 Mixed light type polycrystal packaging structure
CN103247749A (en) * 2012-02-06 2013-08-14 东莞柏泽光电科技有限公司 Multiple-chip encapsulation structure and manufacturing method thereof
EP2797128A4 (en) * 2011-12-20 2015-08-12 Citizen Holdings Co Ltd Led module

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103165589A (en) * 2011-12-08 2013-06-19 东莞柏泽光电科技有限公司 Mixed light type polycrystal packaging structure
EP2797128A4 (en) * 2011-12-20 2015-08-12 Citizen Holdings Co Ltd Led module
US9508910B2 (en) 2011-12-20 2016-11-29 Citizen Holdings Co., Ltd. LED module
EP3220427A1 (en) 2011-12-20 2017-09-20 Citizen Watch Co., Ltd. Led module
US9887185B2 (en) 2011-12-20 2018-02-06 Citizen Watch Co., Ltd. Packaging of LED chips and driver circuit on the same substrate
CN103247749A (en) * 2012-02-06 2013-08-14 东莞柏泽光电科技有限公司 Multiple-chip encapsulation structure and manufacturing method thereof

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