201143126 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種半導體封裝結構，尤其涉及一種發光二 極體封裝結構及其製造方法。 【先前技雜亍】 [0002] 一般的發光二極體（Light Emitting Diode, LED)封 裝結構是將螢光粉混在透明膠體中並覆蓋住發光二極體 晶片以形成白光或多種波長的混合光。然而，發光二極 體晶片發出的不同方向的光束經過透明膠體的距離往往 不同，從而造成發光二極體封裝結構出射光線混光不均 勻。例如，對於採用藍色發光二極體晶片及黃色螢光粉 的白光發光二極體封裝結構，出射光線中心區域往往偏 藍色，而週邊區域偏黃色。 [0003] 請參閱圖1，為解決上述問題，先前技術提供的一種發光 二極體封裝結構1包括一封裝載體2、發光二極體晶片3、 螢光粉4及透明膠體5。所述發光二極體晶片3貼設於封裝 載體2的一凹槽的底部，螢光粉4通過離心技術沉澱於封 裝載體2的凹槽的底壁和侧壁上，企圖形成厚度相同的螢 光粉層。然而，由於封裝載體2的凹槽的底壁和側壁間形 成一直角，位於該角落處的螢光粉層會具有一較大的厚 度，仍然無法得到厚度相同的螢光粉層，從而造成發光 二極體封裝結構出射光線仍然會混光不均勻。 【發明内容】 [0004] 有鑒於此，有必要提供一種混光更均勻的發光二極體封 裝結構及其製造方法。 099115613 表單編號A0101 第4頁/共18頁 0992027691-0 201143126 [0005] Ο [0006] 一種發光二極體封裝結構的製造方法’包括以下步驟： 提供—封裝載體及兩個導線架，該封裝載體包括一第— 表面，該第--表面上形成有一容置槽’所述容置搢由一> 底壁和一侧璧圍成，所述側壁包括一旅形凹面，該孤形 凹面與所述底壁連接；將發光二極體晶片貼設於所述容 置槽的底壁上，並與所述兩個導線架電性連接；將混有 螢光粉的透明膠體注入到所述容置槽内；在透明膠體固 化前利用離心技術使透明膠體中的螢光粉沉澱在所述發 光二極體晶片的表面、所述容置槽的底壁及侧壁上，得 到一第一螢光層；及固化所述透明膠體。 〇 一種發光二極體封裝結構，其包括一封裝栽，體、兩個導 線架 發光二極體晶片、一第一螢光層及一透明膠體 。該封裝載體包括一第一表面’該第一表面上形成有一 容置槽，所述容置槽由一底壁和一側壁齒成，所述側壁 包括一弧形凹面，該弧形凹面與所述底壁孝接。所述發 光二極體晶片貼設於所述容置槽的底壁上，並與所述兩 個導線架電性連接所：述第一-螢光層形成在所述發光二 極體晶片的表面、所述側壁及底壁上。所述透明膠體容 置於所述容置槽内並覆蓋所述發光二極體晶片及第一螢 光層。 [0007] 本發明實施方式提供的發光二極體封裝結構及製造方法 中，由於封裝載體的容置槽的側壁具有一與容置槽的底 壁連接的弧形凹面，叮在採用離心技術形成第一螢光層 時避免螢光粉在容置槽的侧壁或底壁某處堆積而導致第 一螢光層厚度不均，從而能夠得到厚度均勻的第一螢光 099115613 表單編號A0101 第5頁/共18頁 0992027691-0 201143126 層進而提r=j發光一極體封裝結構的混光均勾性。 【實施方式】 [0008] [0009] [0010] [0011] [0012] 以下將結合附圖對本發明作進—步的詳細說明。 請參關2，本發明第—實施方式提供的-種發光二極體 封裝結構10包㈣裝載體u、兩個⑽架12、發光二極 體日B片13、第一螢光層14及透明勝體15。 所述封裝載體11包括相對的第一表面lu及第二表面112 。該第一表面ill上形成有一容置槽113。所述容置槽 113由底壁114和側壁1丨5圍成。所述侧壁〗丨5包括一弧形 凹面115a，該弧形凹面1153位於側壁115靠近底壁114一 端，其與所述底壁114連接。優選地，所述底壁114與所 述弧形凹面115a相切。所述封裝載體丨丨可採用高導熱且 電絕緣材料製成，該高導熱且電絕緣材料可選自石墨、 矽、陶瓷、類鑽、環氧樹脂或矽烷氧樹脂等。 所述每個導線架12—端裸露在容查槽〗丨3的底壁丨14上， ：.'：：： 另一端裸露在封裝載體11的第土表面。所述導線架i 2可 採用金屬或金屬合金製成。 所述發光二極體晶片13貼設於所述容置槽丨13的底壁丨14 或導線架12上，具體地，該發光二極體晶片13可通過黏 著膠固定於容置槽11 3的底壁11 4或導線架12上。該發光 二極體晶片1 3包括兩個極性相反的電極131，該兩個電極 131分別通過焊線132與所述兩個導線架丨2電性連接n值 得說明的是，該發光二極體晶片13亦可以利用覆晶 (f 1 ip-ch ip)或共晶（eutectic)的方式電性連接所述兩 099115613 表單編號A0101 第6頁/共18頁 0992027691-0 201143126 個導線架12。所述發光二極體晶片13能夠發出一第一波 長的光，例如藍光、紫外光（ul travi〇1 et)等。 [0013] 所述第一螢光層14形成於發光二極體晶片13的表面、所 述容置槽113的底壁114及側壁115上。第一螢光層14是 依據容置槽113的底壁114及側壁115所設置，並且第一 螢光層14的厚度大致相同。該第一螢光層14由螢光粉組 成，當發光二極體晶片13發射的第一波長的光照射到該 第一螢光層14上後，該第一螢光層14中的螢光粉會受到 激發，產生電子能階的躍遷，進而發出一第二波長的光 ，例如黃光、其他可見光等。所述第一螢光層14也可以 包含透明膠體15。 [0014] 所述透明膠體15填充於所述容置槽113内，並覆蓋住發光 二極體晶片13和第一螢光層14。所述透明膠體15用於保 護發光二極體晶片13免受灰塵、水氣等影響。透明膠體 15的材質可以為石夕膠（sil i cone)、環氧樹脂（epoxy)或 其組合物。 [0015] 所述發光二極體封裝結構10中的發光二極體晶片13發射 出的部分第一波長的光會直接通過透明膠體15射出發光 二極體封裝結構10，其餘部分的第一波長的光會照射到 第一螢光層14上激發得到第二波長的光。通過該第一波 長的光與第二波長的光混合即可得到多種波長的混合光 。若該第一波長的光為藍光，第二波長的光為黃光，則 混合光為白光。 [0016] 請參閱圖3，本發明第二實施方式提供的一種發光二極體 099115613 表單編號A0101 第7頁/共18頁 0992027691-0 201143126 封裝U冓20具有一封裝載體21，該封裝載體^上的容置 槽213由底壁214和側壁215圍成。該側壁215包括一弧形 凹面215a，該弧形凹面215a與所述底壁214連接。所述 發光二極體封裝結構20與第一實施方式中的發光二極體 封裝、構1 〇相似，二者區別在於，所述發光二極體封裝 結構20中的側壁21 5還包括一弧形凸面215b，該弧形凸 面215b與弧形凹面215a遠離底壁214的一端連接。優選 地，所述弧形凸面215b與所述弧形凹面215a在二者相連 接處具有共同的切面。 [0017] 請參閱圖4，本發明第三實施方式提供的一種發光二極體 封裝結構30具有一封裝載體31及發光二極體晶片33，該 封裝載體31上的容置槽313由底壁314和側壁315圍成。 該底壁314和側壁315上形成有第一螢光層34，其中第 螢光層34的厚度大致相同。該側壁315包括一弧形凹面 315a，該弧形凹面315a與所述底壁314連接。所述發光 一極體封裝結構30與第一實施方式中的發光二極體封裝 、、、°構1 0相似，二者區別在於.，所·填發光二極體封裝結構 30中的底壁314上還具有凹槽314a，該凹槽31 4a内形成 有一第一螢光層36。本實施方式中’所述凹槽3i4a靠近 弧形凹面315a。在離心制程形成第一螢光層34時，螢光 粉會落入凹槽314a中並形成第二螢光層36，使堆積在底 壁314和側壁315的螢光粉高度下降，有助於形成一厚度 相同的第一螢光層34。由於凹槽314a為一凹陷結構，所 述發光二極體晶片33發出的光線無法打到凹槽3i4a内的 卓—螢光層36上’因此凹槽314a内的第二螢光層36並不 099115613 表單編號A0101 第8頁/共18頁 0992027691-0 201143126 影響發光二極體封裝結構30的先，陳。 剛料閱圖5,本發明實施方式還提供了一種發光二極體封 裝結構的製造方法’下面將α本發明第―實施方式提供 的發光二極體封裝結構10為例來說明該發光二極體封裝 結構的製造方法。該發光二極體封裝結構的製造方法包 括以下步驟： [0019]步驟S401，提供封裝載體11及兩個導線架12。所述封裝 載體11之結構於第一實施方式中已說明故不再贅述。 [QQ2Q]步驟S402，將發光士極體晶片13貼設於所述封裝載體11 的容置槽113的底壁11 4上’並與所述兩個導線架12電性 連接。 —- [0021] 步驟S 4 0 3，將混有螢光粉的透明膠體丨5注入到所述容置 槽113内。 [0022] 步驟S404，在透明膠體15固化前利用離心技術使透明膠 體15中的螢光粉沉澱在發4二極體晶片13的表面 '所述 ❹ 容置槽113的底壁114及側壁115上得到第一螢光層14， 其中第一螢光層14的厚度大致相同。具體地，在透明膠 體15固化前，可將整個發光二極體封裝結構1〇放入離心 機台内，利用離心力的作用使螢光粉沉澱到發光二極體 晶片13的表面、所述容置槽113的底壁114及側壁115上 〇 [0023] 步驟S405，固化所述透明膠體15，從而得到發光二極體 封裝結構10。 0992027691-0 099115613 表單編號A0101 第9頁/共丨8頁 201143126 [0024] 本發明實施方式提供的發光二極體封裝結構及製造方法 中，由於封裝載體的容置槽的側璧具有一與容置槽的底 壁連接的弧形四面’可在採用離心技術形成第一螢光層 時避免螢光粉在容置槽的側壁或底壁某處堆積而導致第 一螢光層厚度不均，從而能夠得到厚度均勻的第一螢光 層，進而提高發光二極體封裝結構的混光均勻性。 [0025] 内做其他變化 ，都應包含在 另外，本領域技術人員還可在本發明精神 ，當然，這些依據本發明精神所做之變化 本發明所要求保護之範圍之内。 [0026] [0027] 【圖式簡單說明】 圖1是先前技術提供的一種發A 崎先-極體封裝結構剖視 圖2是本發明第一實施方式提俾 ^ 的一種發光二極體封裝結201143126 VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor package structure, and more particularly to a light emitting diode package structure and a method of fabricating the same. [Previous Technology] [0002] A general Light Emitting Diode (LED) package structure is a method in which a fluorescent powder is mixed in a transparent colloid and covers a light emitting diode wafer to form white light or a mixed light of a plurality of wavelengths. . However, the distances of the light beams emitted from the LEDs in different directions through the transparent colloid are often different, resulting in uneven light mixing of the light emitted from the LED package structure. For example, for a white light emitting diode package structure using a blue light emitting diode chip and a yellow phosphor powder, the center area of the outgoing light tends to be bluish and the peripheral area is yellowish. [0003] Referring to FIG. 1, in order to solve the above problems, a light emitting diode package structure 1 provided by the prior art includes a package carrier 2, a light emitting diode chip 3, a phosphor powder 4, and a transparent colloid 5. The light emitting diode chip 3 is attached to the bottom of a groove of the package carrier 2, and the phosphor powder 4 is deposited on the bottom wall and the side wall of the groove of the package carrier 2 by centrifugal technique, in an attempt to form a firefly of the same thickness. Light powder layer. However, since the bottom wall and the side wall of the groove of the package carrier 2 form a right angle, the phosphor layer at the corner has a large thickness, and the phosphor powder layer having the same thickness is still not obtained, thereby causing the light to be emitted. The exiting light of the diode package structure will still be unevenly mixed. SUMMARY OF THE INVENTION [0004] In view of the above, it is necessary to provide a light-emitting diode package structure in which light mixing is more uniform and a method of manufacturing the same. 099115613 Form No. A0101 Page 4 / 18 pages 0992027691-0 201143126 [0005] A method of manufacturing a light emitting diode package structure includes the following steps: providing a package carrier and two lead frames, the package carrier Including a first surface, the first surface is formed with a receiving groove, wherein the receiving space is surrounded by a bottom wall and a side wall, and the side wall includes a traveling concave surface, and the orphan concave surface The bottom wall is connected to the bottom wall of the receiving groove and electrically connected to the two lead frames; and the transparent colloid mixed with the fluorescent powder is injected into the bottom wall Storing the inside of the groove; using a centrifugal technique to precipitate the phosphor in the transparent colloid on the surface of the LED chip, the bottom wall and the sidewall of the accommodating groove, and obtain a first a phosphor layer; and curing the transparent colloid.发光 A light emitting diode package structure comprising a package body, two wire frame LED chips, a first phosphor layer and a transparent colloid. The package carrier includes a first surface having a receiving groove formed on the first surface, the receiving groove being formed by a bottom wall and a side wall, the side wall including an arcuate concave surface, the curved concave surface Said the bottom wall filial piety. The light-emitting diode wafer is attached to the bottom wall of the accommodating groove, and is electrically connected to the two lead frames: the first-fluorescent layer is formed on the light-emitting diode chip On the surface, the side walls and the bottom wall. The transparent colloid is disposed in the accommodating groove and covers the illuminating diode chip and the first luminescent layer. In the LED package structure and manufacturing method provided by the embodiment of the present invention, since the sidewall of the receiving groove of the package carrier has a curved concave surface connected to the bottom wall of the receiving groove, the crucible is formed by centrifugal technology. In the first phosphor layer, the phosphor powder is prevented from accumulating in the side wall or the bottom wall of the accommodating groove, resulting in uneven thickness of the first phosphor layer, so that the first fluorescent film having a uniform thickness can be obtained. 099115613 Form No. A0101 No. 5 Page / a total of 18 pages 0992027691-0 201143126 layer and then r=j light-emitting one-pole package structure of the light-mixing properties. [0098] [0012] [0012] [0012] The present invention will be described in detail below with reference to the accompanying drawings. Please refer to 2, the light-emitting diode package structure provided by the first embodiment of the present invention includes four (four) carriers u, two (10) frames 12, a light-emitting diode day B piece 13, a first phosphor layer 14 and Transparent victory body 15. The package carrier 11 includes opposing first surface lu and second surface 112. A receiving groove 113 is formed on the first surface ill. The accommodating groove 113 is surrounded by the bottom wall 114 and the side wall 1丨5. The side wall 丨5 includes an arcuate concave surface 115a located at one end of the side wall 115 near the bottom wall 114, which is coupled to the bottom wall 114. Preferably, the bottom wall 114 is tangential to the curved concave surface 115a. The package carrier 丨丨 can be made of a highly thermally conductive and electrically insulating material selected from the group consisting of graphite, tantalum, ceramic, diamond-like, epoxy or decyloxy resin. Each of the lead frames 12-end is exposed on the bottom wall 丨14 of the accommodating groove 丨3, :.::: The other end is exposed on the soil surface of the package carrier 11. The lead frame i 2 may be made of metal or a metal alloy. The LED chip 13 is attached to the bottom wall 丨 14 or the lead frame 12 of the accommodating slot 13 . Specifically, the illuminating diode 13 can be fixed to the accommodating groove 11 by adhesive. The bottom wall 11 4 or the lead frame 12 is on. The LED chip 13 includes two electrodes 131 of opposite polarities, and the two electrodes 131 are electrically connected to the two lead frames 2 through the bonding wires 132 respectively. It is worth noting that the LEDs are The wafer 13 can also be electrically connected to the two 099115613 form number A0101 page 6 / 18 page 0992027691-0 201143126 lead frame 12 by means of flip chip (f 1 ip-ch ip) or eutectic. The light-emitting diode chip 13 is capable of emitting a first wavelength of light, such as blue light, ultraviolet light (ul travi〇1 et et al). The first phosphor layer 14 is formed on the surface of the LED chip 13, the bottom wall 114 and the sidewall 115 of the accommodating groove 113. The first phosphor layer 14 is disposed according to the bottom wall 114 and the sidewall 115 of the accommodating groove 113, and the thickness of the first phosphor layer 14 is substantially the same. The first phosphor layer 14 is composed of phosphor powder. After the first wavelength of light emitted by the LED chip 13 is irradiated onto the first phosphor layer 14, the phosphor in the first phosphor layer 14 is fluorescent. The powder is excited to produce a transition of the electron energy level, which in turn emits a second wavelength of light, such as yellow light, other visible light, and the like. The first phosphor layer 14 may also comprise a transparent colloid 15. [0014] The transparent colloid 15 is filled in the accommodating groove 113 and covers the luminescent diode chip 13 and the first fluorescent layer 14. The transparent colloid 15 is used to protect the light-emitting diode chip 13 from dust, moisture, and the like. The material of the transparent colloid 15 may be a sil i cone, an epoxy or a combination thereof. [0015] A portion of the first wavelength of light emitted by the LED chip 13 in the LED package 10 is directly emitted through the transparent colloid 15 to emit the LED package 10, and the remaining portion of the first wavelength. The light is irradiated onto the first phosphor layer 14 to excite the light of the second wavelength. By mixing the first wavelength of light with the second wavelength of light, mixed light of a plurality of wavelengths can be obtained. If the light of the first wavelength is blue light and the light of the second wavelength is yellow light, the mixed light is white light. Referring to FIG. 3, a light-emitting diode according to a second embodiment of the present invention is 099115613. Form No. A0101 Page 7 of 18 0992027691-0 201143126 The package U冓20 has a package carrier 21, and the package carrier ^ The upper receiving groove 213 is surrounded by a bottom wall 214 and a side wall 215. The side wall 215 includes an arcuate concave surface 215a that is coupled to the bottom wall 214. The light emitting diode package structure 20 is similar to the light emitting diode package and the first embodiment in the first embodiment, and the difference is that the sidewalls 2 5 of the light emitting diode package structure 20 further include an arc. A convex surface 215b is connected to an end of the curved concave surface 215a away from the bottom wall 214. Preferably, the curved convex surface 215b and the curved concave surface 215a have a common cut surface at the junction of the two. [0017] Referring to FIG. 4, a light emitting diode package structure 30 according to a third embodiment of the present invention has a package carrier 31 and a light emitting diode chip 33. The receiving groove 313 of the package carrier 31 is provided by the bottom wall. 314 and side wall 315 are enclosed. A first phosphor layer 34 is formed on the bottom wall 314 and the sidewall 315, wherein the thickness of the first phosphor layer 34 is substantially the same. The side wall 315 includes an arcuate concave surface 315a that is coupled to the bottom wall 314. The light-emitting diode package structure 30 is similar to the light-emitting diode package of the first embodiment, and is different in structure, and the difference is that the bottom wall of the light-emitting diode package structure 30 is filled. The 314 further has a recess 314a, and a first phosphor layer 36 is formed in the recess 31a. In the present embodiment, the groove 3i4a is close to the curved concave surface 315a. When the first phosphor layer 34 is formed by the centrifugation process, the phosphor powder falls into the recess 314a and forms the second phosphor layer 36, so that the phosphor powder deposited on the bottom wall 314 and the side wall 315 is lowered in height, which contributes to A first phosphor layer 34 having the same thickness is formed. Since the recess 314a is a recessed structure, the light emitted by the LED wafer 33 cannot be struck onto the phosphor layer 36 in the recess 3i4a. Therefore, the second phosphor layer 36 in the recess 314a is not 099115613 Form No. A0101 Page 8 / Total 18 Page 0992027691-0 201143126 Affects the LED package structure 30 first, Chen. Referring to FIG. 5, an embodiment of the present invention further provides a method for fabricating a light emitting diode package structure. The light emitting diode package structure 10 according to the first embodiment of the present invention is taken as an example to illustrate the light emitting diode. A method of manufacturing a body package structure. The manufacturing method of the LED package structure comprises the following steps: [0019] Step S401, a package carrier 11 and two lead frames 12 are provided. The structure of the package carrier 11 has been described in the first embodiment and will not be described again. [QQ2Q] In step S402, the illuminating body wafer 13 is attached to the bottom wall 117 of the accommodating groove 113 of the package carrier 11 and electrically connected to the two lead frames 12. — [0021] Step S 4 0 3, a transparent colloid 丨 5 mixed with phosphor powder is injected into the accommodating groove 113. [0022] Step S404, the phosphor powder in the transparent colloid 15 is deposited on the surface of the hairpin diode 13 by the centrifugation technique before the curing of the transparent colloid 15. The bottom wall 114 and the side wall 115 of the accommodating groove 113 are formed. The first phosphor layer 14 is obtained, wherein the thickness of the first phosphor layer 14 is substantially the same. Specifically, before the transparent colloid 15 is cured, the entire LED package structure can be placed in a centrifuge table, and the phosphor powder is precipitated onto the surface of the LED body 13 by the action of centrifugal force. The bottom wall 114 and the side wall 115 of the groove 113 are placed on the side wall 115. [0023] Step S405, the transparent colloid 15 is cured, thereby obtaining the light emitting diode package structure 10. 0992027691-0 099115613 Form No. A0101 Page 9 / A total of 8 pages 201143126 [0024] In the LED package structure and manufacturing method provided by the embodiments of the present invention, since the side of the receiving groove of the package carrier has a tolerance The curved four sides of the bottom wall of the groove can prevent the phosphor powder from accumulating in the side wall or the bottom wall of the accommodating groove when the first fluorescent layer is formed by centrifugation, resulting in uneven thickness of the first fluorescent layer. Thereby, the first phosphor layer having a uniform thickness can be obtained, thereby improving the light mixing uniformity of the light emitting diode package structure. [0025] Other variations are intended to be included within the scope of the invention as claimed in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a front-end polar body package structure provided by the prior art. FIG. 2 is a light-emitting diode package junction according to a first embodiment of the present invention.
圖 構剖視圖。 [0028] 圖3是本發明第二實施方式提供的—種發光 構剖視圖。 —極體封裝結 [0029] 圖4是本發明第三實施方式提供的 構剖視圖。 一種發光二極體封裝結Figure cross-sectional view. 3 is a cross-sectional view showing a light-emitting structure according to a second embodiment of the present invention. - Pole package junction [0029] Fig. 4 is a cross-sectional view of a third embodiment of the present invention. Light-emitting diode package junction
[0030] 圖5是本發明實施方式提供的— 製造方法流程圊。 種發光二極體封裝結構的 【主要元件符號說明】 [0031] 發光二極體封裝結構：卜H ^ [0032] 封裝載體：2 ’ 11，21，3 1 [0033] 發光二極體晶片：3，13 , Μ 099115613 表單編號Α0101 第10頁/共18頁 0992027691-0 201143126 [0034] 螢光粉： [0035] 透明膠體：5，15 [0036] 導線架：12 [0037] 第一螢光層：14，34 [0038] 第二螢光層：36 [0039] 第一表面：111 [0040] 第二表面：112 [0041] 容置槽：113，213，313 [0042] 凹槽：314a [0043] 底壁：114，214，314 [0044] 側壁：115，215，315 [0045] 弧形凹面：115a，215a，315a ' ^ !.；-； - - [0046] ❹ 電極：131 [0047] 焊線：132 [0048] 弧形凸面：215b 099115613 表單編號A0101 第11頁/共18頁 0992027691-0[0030] FIG. 5 is a flow chart of a manufacturing method provided by an embodiment of the present invention. [Main Component Symbol Description of Light Emitting Diode Package Structure] [0031] Light Emitting Diode Package Structure: Bu H ^ [0032] Package Carrier: 2 ' 11, 21, 3 1 [0033] LED Diode Wafer: 3,13 , Μ 099115613 Form No. 1010101 Page 10 / Total 18 Page 0992027691-0 201143126 [0034] Fluorescent Powder: [0035] Transparent Colloid: 5,15 [0036] Conductor: 12 [0037] First Fluorescent Layer: 14, 34 [0038] Second phosphor layer: 36 [0039] First surface: 111 [0040] Second surface: 112 [0041] accommodating groove: 113, 213, 313 [0042] Groove: 314a [0043] Bottom wall: 114, 214, 314 [0044] Side wall: 115, 215, 315 [0045] Curved concave surface: 115a, 215a, 315a ' ^ !.; -; - - [0046] ❹ Electrode: 131 [ 0047] Wire bond: 132 [0048] Curved convex surface: 215b 099115613 Form number A0101 Page 11 / Total 18 page 0992027691-0