TW540168B - LED package with metal substrates protrusion outside the glue - Google Patents
LED package with metal substrates protrusion outside the glue Download PDFInfo
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- TW540168B TW540168B TW91104772A TW91104772A TW540168B TW 540168 B TW540168 B TW 540168B TW 91104772 A TW91104772 A TW 91104772A TW 91104772 A TW91104772 A TW 91104772A TW 540168 B TW540168 B TW 540168B
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Abstract
Description
540168 五、發明說明(1) -------- 1 ·本技藝適用領域 本技藝適用於發光二極體晶片之封裝技藝。 2 ·背景說明 圖1 ·習知技藝頂視圖 . j 藝如圖1所示(台灣專利申請案第08 9 1 0 99 99以及美, 1 、=明案第〇9/596,907)所述之發光二極體金屬基材 ===路之封裝,其金屬基材11 · 12 ·上方全部被封裝膠體 =瓜裸露金屬基材下方提供後續之焊接用。圖1為 、刖技藝之頂面視圖,顯示金屬基材丨丨· 12•具有凹邊14、 以及凹溝17,發光二極體晶片10安置在第一金屬基材11上 方,以打線1 3耦合發光二極體晶片丨〇之表面電極至第二金 屬基材12,發光二極體晶片ι〇的底面電極接觸耦合至第一 金屬基材11。最後以保護膠體封裝之,如圖2所示。 圖2.圖1.之AA截面圖 圖2是圖1依據AA線切割之剖面圖,顯示封裝膠體i 5會充滿響 於凹溝17之中,封裝膠體也充滿凹邊14之旁邊,凹&14旁 邊之保護膠體15將凹溝17之中的保護膠體15與金屬基材 11 · 1 2 ·上面的保護膠體1 5相連結構成保護膠體1 5整體,使 得保護膠體1 5可以穩固地與金屬基材丨丨·丨2 ·相結合。這個· 習知技藝僅裸露金屬基材11·12·的下方表面,提供作為後540168 V. Description of the invention (1) -------- 1 · Applicable fields of this technology This technology is applicable to the packaging technology of light-emitting diode chips. 2 · Background Description Figure 1 · Top view of conventional techniques. The technique is shown in Figure 1 (Taiwan Patent Application No. 08 9 1 0 99 99 and Mei, 1 = Ming Ming No. 09 / 596,907) The light-emitting diode metal substrate === road package, the metal substrate 11 · 12 · all of which is encapsulated above the gel = the bare metal substrate is provided for subsequent welding. FIG. 1 is a top view of the 刖 craft, showing a metal substrate 丨 丨 12 12 having a concave edge 14 and a groove 17, a light emitting diode wafer 10 is disposed above the first metal substrate 11 to wire 1 3 The surface electrode of the light-emitting diode wafer is coupled to the second metal substrate 12, and the bottom electrode of the light-emitting diode wafer is coupled to the first metal substrate 11. Finally, it is encapsulated with protective colloid, as shown in Figure 2. Figure 2. Section AA of Figure 1. Figure 2 is a cross-sectional view cut along line AA of Figure 1. It shows that the encapsulant i 5 will fill the groove 17 and the encapsulant will fill the side of the recess 14. The protective colloid 15 next to 14 connects the protective colloid 15 in the groove 17 with the metal substrate 11 · 1 2 · The upper protective colloid 15 is connected to form the protective colloid 15 as a whole, so that the protective colloid 15 can be firmly connected to Metal substrate 丨 丨 · 丨 2 · combined. This know-how only exposes the lower surface of the metal substrate 11 · 12 ·, which is provided as a rear
第5頁 540168 五、發明說明(2) ΪΠ:由於只ί下表面提供焊接用,其焊接可靠度 :以及第-ί:了提尚焊接可靠度,•第一金屬基材的左 = 屬基材的右邊,凸出於封裝膠體25.35.,在 可;r料可以覆蓋至凸出之金屬腳β上表* 3 ·本技藝之詳細說明 圖3 ·本技藝實施例一截面圖 i食之金屬基材21·22·兩邊β凸出於封裝膠體25, &餘如同習知技藝所示。金屬基材21. 22·具有凹溝 25,^體25充滿於凹溝27之中,凹溝27中的封裝膠體 梦膠^^^圖一所示之凹邊14與金屬基材21.22.表面之封 ^二Ϊμ合成為一個整體。發光二極體晶片20安置於 極耦入至J材2 1上’藉著打線將發光二極體晶片的表面電 極金屬基材22’發光二極體晶片20的底面電 接觸耦合於第一金屬基材21。 為圖3·的焊接示意圖 : = 基材21·22.凸出於保護勝體25兩邊的區域Β,在 接時,缉錫材料26可以包覆在區_的〔上\Β在 扣向銲錫可靠度。 上衣面, 圖5 ·本技藝實施例二截面圖Page 5 540168 V. Description of the invention (2) ΪΠ: Since only the lower surface is provided for welding, its welding reliability: and No.-ί: Tishan welding reliability, left of the first metal substrate = metal base The right side of the material protrudes from the encapsulating gel 25.35. The material can be covered to the protruding metal feet β on the table. * 3 · Detailed description of the technique Figure 3 · Sectional view of the first embodiment of the technique Both sides of the base material 21 · 22 · are protruded from the encapsulating gel 25, as shown in the conventional art. Metal substrate 21. 22 · has a groove 25, and the body 25 is filled in the groove 27. The encapsulating gel dream gel in the groove 27 ^^^ The concave edge 14 shown in FIG. 1 and the metal substrate 21.22. Surface The seal ^ 二 Ϊμ is synthesized as a whole. The light-emitting diode wafer 20 is disposed on the pole coupled to the J material 21, and the surface electrode of the light-emitting diode wafer is metallized by wire bonding. The bottom surface of the light-emitting diode wafer 20 is electrically contact-coupled to the first metal. Substrate 21. It is the welding schematic diagram of Fig. 3: = substrate 21 · 22. The area B protruding from both sides of the protection body 25, when connected, the soldering material 26 can be covered in the area of [上 \ Β in the direction of the solder Reliability. Top, Fig. 5 · Sectional view of the second embodiment of the technique
第6頁 540168 五、發明說明(3) 顯示封裝膠體25也可以將金屬基材21· 22·的下表面包覆 如厚度C所示,提高封裝膠體25與金屬基材212g.之°間"的 穩定度。 ··曰 圖6.本技藝實施例三截面圖 顯示金屬基材211· 221·具有凹溝271,凹溝2n可以採用化· 學方法半蝕刻、或是以機械方法切割獲得,與圖3·4·5的 衝壓凹溝27不同,惟,其提供封裝膠體25之充滿效果是一- 樣的。 圖7 ·本技藝實施例四截面圖 顯示金屬基材31·32·係呈現L型,凹陷處37的功能與前面 的凹溝27· 271·是一樣的,提供封裝膠體35充滿之用,提 高封裝膠體35與金屬基材31· 32·之間的結合穩定度。 圖8.本技藝實施例五截面圖 顯示金屬基材311.321.的凹陷處37再增加凹溝371,這也 是增加封裝膠體35充滿之量,提高封裝膠體35與金屬芙 311· 321·之間的結合穩定度。 土 ^ 圖9 ·本技藝實施例六截面圖 顯示封裝膠體35也可以覆蓋至金屬基材311·321•的下表 面,比起圖8而言,下表面增加區域])被封裝膠體所覆蓋。, 這樣可以將兩邊金屬腳的銲錫區域分開比較遠,減少銲錫Page 6 540168 V. Description of the invention (3) It is shown that the encapsulating colloid 25 can also cover the lower surface of the metal substrate 21 · 22 · as shown in thickness C to increase the interval between the encapsulating colloid 25 and the metal substrate 212g. ; Stability. ··· Figure 6. Sectional view of the third embodiment of the present technology shows a metal substrate 211 · 221 · With a groove 271, the groove 2n can be obtained by chemical etching or semi-etching, or by mechanical cutting, as shown in Figure 3 · The stamping groove 27 of 4.5 is different, but the filling effect of the encapsulation gel 25 is the same. Figure 7 · The fourth cross-sectional view of the fourth embodiment of the present technology shows that the metal substrate 31 · 32 · is L-shaped, and the function of the recess 37 is the same as that of the previous groove 27 · 271 ·. The bonding stability between the encapsulant 35 and the metal substrate 31 · 32 ·. Figure 8. The cross-sectional view of the fifth embodiment of the present technology shows that the recess 37 of the metal substrate 311.312. Is further increased by the groove 371, which is also to increase the filling volume of the encapsulating colloid 35, and to increase the gap between the encapsulating colloid 35 and the metal buff 311 · 321 ·. Combined stability. Figure 9 · Sectional view of the sixth embodiment of the present technology shows that the encapsulating colloid 35 can also be covered on the lower surface of the metal substrate 311 · 321 ·, compared with Fig. 8, the lower surface has an increased area]) covered by the encapsulating colloid. This can separate the solder area of the metal feet on both sides relatively far, reducing the solder
540168 五、發明說明(4) 材料短路的機會。 圖1 0.本技藝實施例七頂面圖 顯示金屬基材311· 321·也可以挖出通孔381,讓保護膠體 35穿過充滿’提高封裝膠體35與金屬基材3丨1β 321•之間的 結合穩定度。凹邊24與圖1的凹邊14的功能一樣,將凹溝 中的保護膠體3 5連結於金屬基材3 11 · 3 2 1 ·上面之保護膠體 35 α 圖11 · 本技藝實施例八頂面圖 顯示金屬基材311 _ 321.的上表面加以粗造化,提高封裝膠 體35與金屬基材311·321·之間的結合穩定度。金屬基材 311 · 3 21 ·的下表面也可以力口以粗造化,提供同樣的效果。 圖1 2 ·本技藝實施例九截面圖 顯示封裝膠體35中央可以製作凹杯39,提供光線聚集增強 的功能。 3 圖1 3 ·本技藝實施例十截面圖 顯示發光一極體晶片2 0 1具有雙表面電極,分別以打線 131.132·耦合至金屬基材31.32.。 圖1 4.本技藝實施例十一截面圖 顯示發光二極體晶片202具有雙底面電極,分別接觸輕&540168 V. Description of the invention (4) Opportunity of material short circuit. Figure 10. The top view of the seventh embodiment of the present technology shows that the metal substrate 311 · 321 · can also be dug out through holes 381, allowing the protective colloid 35 to be filled with 'improving the sealing colloid 35 and the metal substrate 3 丨 1β 321 • of Inter-bound stability. The concave edge 24 has the same function as the concave edge 14 in FIG. 1, and the protective colloid 3 5 in the groove is connected to the metal substrate 3 11 · 3 2 1 · the upper protective colloid 35 α Fig. 11 · Eighth embodiment of this technical embodiment The plan view shows that the upper surface of the metal substrate 311_321. Is roughened to improve the bonding stability between the encapsulant 35 and the metal substrate 311 · 321 ·. The lower surface of the metal substrate 311 · 3 21 · can also be roughened to provide the same effect. Fig. 12 · Ninth cross-sectional view of the embodiment of the present technology shows that a concave cup 39 can be made at the center of the encapsulating gel 35 to provide the function of enhancing light gathering. 3 Figure 1 3 · Ten cross-sectional views of the embodiment of the present technology show that the light-emitting monopolar wafer 201 has a double-surface electrode, which is respectively coupled to a metal substrate 31.32 by wire 131.132 ·. Figure 1 4. Sectional view of the eleventh embodiment of the present technology shows that the light emitting diode wafer 202 has double bottom electrodes, which are respectively in contact with light &
第8頁 540168 五、發明說明(5)Page 8 540168 V. Description of the invention (5)
至金屬基材3 1 β 3 L 圖1 5 ·本技藝實施例十二截面圖 技ΐ的保護膠體351包含螢光材料或是其他光線体 ^枓:备晶片202發光時’螢光材料或是其他光線修飾To the metal substrate 3 1 β 3 L Figure 1 5 · The twelve cross-sectional view of the embodiment of this technology The protective colloid 351 of the technology contains a fluorescent material or other light body ^ 枓: When the prepared wafer 202 emits light, 'fluorescent material or Other light modifiers
ϊ 、光線相加、或是光線過渡的效果,使I 出射光與晶片原色光不肖’增加出色光顏色的變化。件 述揭示了本發明之較佳實施例以及設計圖式,惟, 列以=圖式僅是舉例說明,並非用於限制本 發日2d:此’凡是以均等之技藝手段實施本 疋;下述之「申請專利範圍」所涵蓋之權 利範圍而貝她=不脫離本發明之精神而為申請人之權ϊ, the addition of light, or the effect of light transition, so that the output light of I and the original color of the chip are not different, increasing the change of excellent light color. The description reveals the preferred embodiment of the present invention and the design scheme, but the = scheme is only an example, and is not intended to limit the current day 2d: This' everything is implemented by equal means; The scope of rights covered by the "Scope of Patent Application" mentioned above and Beckett = the right of the applicant without departing from the spirit of the invention
540168 圖式簡單說明 4. 圖式的簡單說明 - 圖1.習知技藝頂視圖 圖2.圖1,之AA截面圖 圖3. 本技藝實施例一截面圖 _ 圖4.為圖3.的焊接示意圖 圖5.本技藝實施例二截面圖 - 圖6.本技藝實施例三截面圖 圖7 · 本技藝實施例四截面圖 胃1 圖8. 本技藝實施例五截面圖 圖9. 本技藝實施例六截面圖 圖1 0. 本技藝實施例七頂面圖 圖11. 本技藝實施例八頂面圖 圖12. 本技藝實施例九截面圖 圖1 3. 本技藝實施例十截面圖 圖1 4. 本技藝實施例十一截面圖 圖1 5. 本技藝實施例十二截面圖 5. 元件編號表 晶片 1 0. 2 0.20 1.2 0 2. 金屬基材11. 12. 21. 22. 211. 221. 31· 32· 311· 321. 打線1 3.540168 Brief description of the drawings 4. Brief description of the drawings-Figure 1. Top view of the conventional technique Figure 2. Figure 1, AA sectional view Figure 3. Sectional view of the embodiment of this technology _ Figure 4. Figure 3. Welding schematic diagram 5. Sectional view of the second embodiment of the technology-Fig. 6. Sectional view of the third embodiment of the technology. Figure 7 · Sectional view of the fourth embodiment of the technology. Stomach 1 Figure 8. Sectional view of the fifth embodiment of the technology. The sixth embodiment of the present invention is a cross-sectional view of FIG. 10. The seventh embodiment of the present art is a top view of FIG. 11. The eighth embodiment of the present art is a top view of FIG. 12. The ninth embodiment of the present art is a sectional view of FIG. 1 4. Sectional view of the eleventh embodiment of the technology FIG. 1 5. Sectional view of the twelveth embodiment of the technology 5. Part number table wafer 1 0. 2 0.20 1.2 0 2. Metal substrate 11. 12. 21. 22. 211 221. 31 · 32 · 311 · 321. Wired 1 3.
第10頁 540168 圖式簡單說明 . 凹邊1 4, 24. 凹溝 17. 27. 271, 37· 371. 封裝膠體 15·25·35·351. 銲錫覆蓋區2 6. 通孔381. 粗糙面3 8 2 · ' 凹杯3 9.Page 540168 Simple illustration of the drawing. Concave edge 1, 4, 24. Concave groove 17. 27. 271, 37 · 371. Packaging gel 15.25 · 35 · 351. Solder footprint 2 6. Through hole 381. Rough surface 3 8 2 '' Concave cup 3 9.
第11頁Page 11
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TW91104772A TW540168B (en) | 2002-03-11 | 2002-03-11 | LED package with metal substrates protrusion outside the glue |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103855145A (en) * | 2014-01-13 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | LED lamp filament and illumination device |
CN103855148A (en) * | 2014-01-06 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | Led filament and lighting device |
CN103855146A (en) * | 2014-01-13 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | Led filament and lighting device |
CN103872033A (en) * | 2014-02-26 | 2014-06-18 | 深圳市瑞丰光电子股份有限公司 | LED (light-emitting diode) lamp filament and illuminator |
TWI555238B (en) * | 2011-02-10 | 2016-10-21 | 日亞化學工業股份有限公司 | Light emitting device, method of manufacturing the same, and package array |
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2002
- 2002-03-11 TW TW91104772A patent/TW540168B/en not_active IP Right Cessation
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI555238B (en) * | 2011-02-10 | 2016-10-21 | 日亞化學工業股份有限公司 | Light emitting device, method of manufacturing the same, and package array |
CN103855148A (en) * | 2014-01-06 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | Led filament and lighting device |
CN103855148B (en) * | 2014-01-06 | 2017-03-08 | 深圳市瑞丰光电子股份有限公司 | LED filament and illuminator |
CN103855145A (en) * | 2014-01-13 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | LED lamp filament and illumination device |
CN103855146A (en) * | 2014-01-13 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | Led filament and lighting device |
CN103855146B (en) * | 2014-01-13 | 2017-01-25 | 深圳市瑞丰光电子股份有限公司 | Led filament and lighting device |
CN103855145B (en) * | 2014-01-13 | 2017-09-15 | 深圳市瑞丰光电子股份有限公司 | A kind of LED filament and ligthing paraphernalia |
CN103872033A (en) * | 2014-02-26 | 2014-06-18 | 深圳市瑞丰光电子股份有限公司 | LED (light-emitting diode) lamp filament and illuminator |
CN103872033B (en) * | 2014-02-26 | 2017-08-25 | 深圳市瑞丰光电子股份有限公司 | A kind of LED filament and luminaire |
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