US20220102599A1 - Deep molded reflector cup used as complete led package - Google Patents
Deep molded reflector cup used as complete led package Download PDFInfo
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- US20220102599A1 US20220102599A1 US17/549,278 US202117549278A US2022102599A1 US 20220102599 A1 US20220102599 A1 US 20220102599A1 US 202117549278 A US202117549278 A US 202117549278A US 2022102599 A1 US2022102599 A1 US 2022102599A1
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- lead
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- emitting device
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- 239000008393 encapsulating agent Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000002923 metal particle Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Definitions
- This invention relates to packaged light emitting diodes (LEDs) and, in particular, to a reflective cup used as a complete and compact package for an LED die.
- LEDs packaged light emitting diodes
- the LED die package is a combination of the PCB, the cup, and the encapsulant.
- a hemispherical lens containing an encapsulant is affixed over the LED die to improve light extraction. This requires a large center hole in the cup to accommodate the lens.
- the resulting package is fairly large since the PCB must extend beyond the reflective cup. Further, there are multiple parts to the package, which require handling and which reduce the reliability of the package.
- conventional reflective cups are relatively shallow, which produces a wide beam, since the purpose of the cup is just to reflect the side light and contain the encapsulant.
- the cup is not used to shape the beam.
- a lens is provided over the LED die prior to the cup being affixed to the PCB. Therefore, the lens and the added handling add further cost to the package.
- the lens also attenuates the light.
- shallow reflective cups are shown in US publication 2013/0228810, where the cups are completely filled and, in some cases, a lens is molded over the cup and LED die.
- a plastic cup is molded over a lead frame, where the center of the cup has metal pads for connection to electrodes of an LED die.
- the curved wall of the cup is coated with a highly reflective film, such as silver or aluminum.
- the cup is deep (e.g., at least 5 mm) to create a narrow collimated beam.
- the lead frame may extend out from the sides of the plastic cup, or the lead frame may lead to bottom electrodes on the cup.
- the lead frame may be copper for good electrical and heat conduction, and the metal pads/electrodes may be plated with gold, have gold bumps, wetted with solder, or otherwise prepared for being suitable for bonding to LED electrodes and to pads on a substrate (including a PCB).
- the LED die is then mounted on the cup's base and electrically connected to the lead frame.
- the lead frame and cup material conduct heat from the LED die. Wire bonding may also be used for non-flip-chip dies.
- the cup is partially filled with an encapsulant, which may be clear or a phosphor mixture.
- the encapsulant is then cured.
- the cup does not have a center hole, it can be easily molded so that there is no vertical portion of the wall next to the LED die that blocks the light or reflects light back into the die. All light incident on the reflective wall is reflected in a forward direction.
- the entire package is a single unit that is the size of the reflective cup.
- the deep cup is used to shape the beam so no lens is needed.
- the package has a high reliability since it is a single piece.
- FIG. 1 is a cross-sectional view of a flip-chip LED die mounted on a lead frame molded into a deep reflective cup in accordance with one embodiment of the invention.
- FIG. 2 is a cross-sectional view of a wire-bonded LED die mounted on a lead frame molded into a deep reflective cup in accordance with another embodiment of the invention.
- FIG. 3 is a cross-sectional view of a flip-chip LED die mounted on a lead frame molded into a deep reflective cup, where the lead frame forms bottom pads of the cup, in accordance with another embodiment of the invention.
- FIG. 4 is a cross-sectional view of a wire-bonded LED die mounted on a lead frame molded into a deep reflective cup, where the lead frame forms bottom pads of the cup, in accordance with another embodiment of the invention.
- FIG. 5 is a top down view of the cup portion of any of the embodiments of FIGS. 1-4 , showing the location of bonding pads in the cup and the location of the LED die within the cup.
- FIG. 6 illustrates the cup and LED die of FIG. 1 after a phosphor mixture or clear mixture is deposited in the cup to encapsulate the LED die.
- FIG. 7 illustrates the cup and LED die of FIG. 3 after a phosphor mixture or clear mixture is deposited in the cup to encapsulate the LED die.
- FIG. 8 is a light intensity vs. angle profile for any LED die wavelength between 400-750 nm, illustrating the relatively narrow beam that results with the deep cup of FIGS. 1-7 .
- FIG. 1 illustrates a reflective cup package 10 in accordance with one embodiment of the invention.
- a copper lead frame is stamped from a sheet or sheets to form the leads 12 and 14 of the package 10 .
- the area where the leads 12 and 14 are to be bonded to the LED die 16 electrodes 18 and 20 may be plated with a suitable metal, such as gold or alloys, to form bonding pads 22 and 24 .
- a suitable metal such as gold or alloys
- Any portion of the lead frame that is used for an electrical connection is referred to herein as a bonding pad or an electrode, whether the connection is by solder, ultrasonic weld, wire bond, conductive epoxy, etc.
- a plastic cup 26 Over the lead frame is molded a plastic cup 26 .
- An identical plastic cup is simultaneously molded over each lead frame in the array. Compression molding or injection molding may be used.
- the plastic is thermally conductive. If the plastic is also electrically conductive, for example, due to containing metal particles (for increasing its thermal conductivity), the portion of the lead frame in contact with the plastic has a dielectric coating (not separately shown) formed over it prior to the molding step.
- the cup 26 generally forms a parabola which is orthogonal to the plane of the top light emitting surface of LED 16 , with a circular cross-section which is parallel to the plane of the top light emitting surface of LED 16 , such as shown in FIG. 5 .
- the shape can also be a compound parabolic concentrator (CPC).
- CPC compound parabolic concentrator
- the parabola portion of the cup 26 is about 5 mm deep, its top opening is about 6-7 mm in diameter, and its bottom surface flat area for the LED die 16 is about 1-2 mm in diameter.
- the cup 26 slopes up from its bottom surface to its top edge to generally reflect all LED die light upward. The deeper the cup, the narrower the beam, so the beam shape is determined by the cup shape rather than any lens. In the preferred embodiment, no lens is used.
- the inside surface of the cup 26 is then coated with a reflective material 28 , such as a silver or aluminum film, by sputtering, evaporation, spraying, or other process.
- a reflective material 28 such as a silver or aluminum film
- the reflection may be specular for the narrowest beam or may be diffusive (such as by using white paint) for a wider beam.
- a masking process may be used to ensure that that bonding pads 22 / 24 are not shorted or coated by reflective material 28 .
- the reflective material may be removed from bonding pad 22 / 24 and then plated with gold or any other suitable material.
- the reflective film is a dichroic coating tuned to the LED die emission.
- a masking process may be used to ensure that that the electrodes are not coated with reflective material 28 or the alternative dichroic coating.
- the bottom electrodes 18 / 20 of the flip-chip LED die 16 are then bonded to the bonding pads 22 / 24 formed at the ends of the leads 12 and 14 .
- the bonding may be by ultrasonic welding, solder, solder paste, conductive epoxy, or by other means.
- LED dies are typically square and on the order of 0.5-1 mm per side.
- the leads 12 and 14 form anode and cathode leads for connection to a power supply.
- the outer ends of the leads 12 and 14 may be soldered to metal pads on a printed circuit board (PCB) or other substrate to supply power to the LED die 16 .
- PCB printed circuit board
- a light ray 30 emitted from the LED die 16 is shown reflecting off the wall of the cup 26 in a forward direction. Any light rays from the side walls of the LED die 16 will similarly be reflected upwards by the cup 26 .
- Heat from the LED die 16 is removed by a combination of the air over the LED die 16 , the leads 12 and 14 , and the package 10 .
- the bottom surface 32 of the package 10 may be thermally coupled to a substrate using a thermally conductive paste.
- the substrate and/or the cup 26 may have an aluminum core (not shown) that acts as a heat sink.
- FIG. 5 illustrates the location of the bonding pads 22 and 24 relative to the LED die 16 (shown by dashed lines as transparent).
- the bonding pads 22 and 24 may be as wide or wider than the LED die 16 .
- the leads 12 / 14 in FIG. 1 may be much wider than the LED die 16 to better sink the heat from the LED die.
- FIG. 2 illustrates a package 36 similar to that of FIG. 1 but the LED die 38 has a top electrode that is wire bonded to a bonding pad of the lead 40 via a wire 42 .
- the LED die 38 has a bottom electrode bonded to the bonding pad of the lead 44 for good thermal and electrically conductivity.
- the cup 26 is otherwise the same.
- the LED die may be the type that has two top electrodes, and both electrodes are wire bonded to bonding pads of the leads.
- the bottom thermal pad of the LED die would be thermally bonded to the plastic base of the cup 26 using a thermally conductive epoxy.
- the width of the leads 12 / 14 or 40 / 44 may be at least as wide as the LED die, such as 2 mm wide or more, to provide a good thermal path to the substrate (e.g., a PCB).
- FIG. 3 illustrates an electrode pattern for a package 48 where the lead frame forms bottom bonding pads 50 and 52 after the plastic cup 54 is molded around the lead frame.
- the top and bottom surfaces of the leads may be plated with gold or other metal to enhance bonding to the LED die 16 electrodes and the substrate electrodes. Gold balls, solder, or other bonding techniques may be used instead of plating.
- FIG. 3 shows top bonding pads 56 and 57 formed on the top surface of the lead frame.
- the bottom electrodes 50 and 52 may extend the entire width of the package 48 to maximize thermal contact with the substrate.
- the package 48 provides better thermal conduction between the LED die 16 and the substrate than the package 10 of FIG. 1 .
- the bonding pad configuration shown in FIG. 5 may also apply to FIG. 3 .
- FIG. 4 illustrates a package 58 similar to that of FIG. 3 but the top electrode of the LED die 38 is connected to the top bonding pad 60 by the wire 42 .
- the LED die may also have two top electrodes wire bonded to the top bonding pads of the lead frame, and the bottom thermal pad of the LED die is thermally coupled to the package 48 or 58 by a thermally conductive epoxy.
- FIGS. 6 and 7 illustrate the LED die 16 in the packages 10 and 48 being encapsulated after being mounted in the cup.
- the same encapsulation may also be used in the packages 36 and 58 .
- the encapsulation protects the LED die 16 and improves light extraction by typically having an index of refraction between the LED die material (e.g., GaN) and air.
- the encapsulant 64 may be a silicone binder infused with phosphor powder, such as YAG phosphor or red and green phosphor. If the LED die 16 emits blue light, some of the blue light will leak through and combine with the phosphor light to produce white light. Any color may be generated by the selection of the phosphor.
- a phosphor particle 66 is shown emitting a yellow light ray 68 that mixes with the LED die's blue light ray 30 to create white light.
- the encapsulant 64 may instead be clear or diffusing. Silicone may be used.
- a diffusing material may be TiO.sub. 2 (white) particles in the silicone.
- the phosphor may even be a separate layer covering the LED die 16 prior to depositing the encapsulant 64 .
- prior art shallow cups which are used to restrict side light, are typically completely filled with an encapsulant due to the very small volume of the cup.
- a lens in then typically mounted over the shallow cup.
- FIGS. 6 and 7 also show the leads 12 / 14 and bottom pads 50 / 52 bonded (e.g., soldered) to respective pads or traces 70 - 73 on a substrate 76 / 78 , such as a PCB.
- the substrate 76 / 78 may have a metal core (not shown) for conducting the heat away from the LED die 16 .
- the leads extend from a single side of the package and form male connectors (electrodes) for a socket or for other types of female connectors.
- FIG. 8 is a light intensity vs. angle profile of a 5 mm deep cup having parabolic reflective walls.
- the units on the y axis convey the relative flux rather than an absolute value.
- the beam is extremely well-defined, narrow, and symmetrical about the center axis of the LED die (at 90 degrees).
- the beam can be shaped by the cup rather than a lens. Cups having depths greater than 5 mm are also envisioned for a narrower beam. By using the deep cup package, even a low power LED may be used to generate a very bright but narrow beam.
- the resulting packages are essentially a minimum possible size, given that the cup must have certain dimensions for the desired light emission.
- the plastic cup is formed of a white plastic, then no reflective film is required to be deposited on the cup walls if a diffused reflection is desired.
- plastic has been used in the example of the moldable material, any other suitable moldable material may be used for the cup.
Abstract
Description
- This application is a continuation of U.S. Patent Application Ser. No. 15/104,475, filed Jun. 14, 2016, which is a National Stage Entry of PCT/IB2014/067266, filed Dec. 23, 2014, which claims the benefit of U.S. Provisional Application Ser. No. 61/924,740, filed Jan. 8, 2014, which are incorporated by reference as if fully set forth.
- This invention relates to packaged light emitting diodes (LEDs) and, in particular, to a reflective cup used as a complete and compact package for an LED die.
- It is common to mount an LED die on a printed circuit board (PCB), or other substrate, for electrically connecting electrodes of the LED to conductive traces on the PCB. Then, a molded reflector cup with a center hole is affixed to the PCB and surrounds the LED die. The cup is then filled with a phosphor mixture, or a clear material, and cured to encapsulate the LED die. The cup limits the side light emission of the LED die and directs it in a generally forward direction. Therefore, the LED die package is a combination of the PCB, the cup, and the encapsulant.
- In some cases, a hemispherical lens containing an encapsulant is affixed over the LED die to improve light extraction. This requires a large center hole in the cup to accommodate the lens.
- The resulting package is fairly large since the PCB must extend beyond the reflective cup. Further, there are multiple parts to the package, which require handling and which reduce the reliability of the package.
- Another drawback of using the molded reflector cup with the center hole is that the inner edges of the cup facing the LED die form short vertical walls, rather than angled knife edges. Knife edges are not achievable with a standard molding process. Therefore, the inner edges block some of the light rather than reflect it in a forward direction.
- Additionally, conventional reflective cups are relatively shallow, which produces a wide beam, since the purpose of the cup is just to reflect the side light and contain the encapsulant. The cup is not used to shape the beam. To shape the beam, such as to collimate the beam, a lens is provided over the LED die prior to the cup being affixed to the PCB. Therefore, the lens and the added handling add further cost to the package. The lens also attenuates the light.
- Some examples of shallow reflective cups are shown in US publication 2013/0228810, where the cups are completely filled and, in some cases, a lens is molded over the cup and LED die.
- What is needed is a more compact, less expensive, and more reliable package for an LED die in an application that requires a collimated beam.
- In one example of the invention, a plastic cup is molded over a lead frame, where the center of the cup has metal pads for connection to electrodes of an LED die. The curved wall of the cup is coated with a highly reflective film, such as silver or aluminum. The cup is deep (e.g., at least 5 mm) to create a narrow collimated beam. The lead frame may extend out from the sides of the plastic cup, or the lead frame may lead to bottom electrodes on the cup. The lead frame may be copper for good electrical and heat conduction, and the metal pads/electrodes may be plated with gold, have gold bumps, wetted with solder, or otherwise prepared for being suitable for bonding to LED electrodes and to pads on a substrate (including a PCB).
- The LED die is then mounted on the cup's base and electrically connected to the lead frame. The lead frame and cup material conduct heat from the LED die. Wire bonding may also be used for non-flip-chip dies.
- After the LED die is mounted in the cup, the cup is partially filled with an encapsulant, which may be clear or a phosphor mixture. The encapsulant is then cured.
- Since the cup does not have a center hole, it can be easily molded so that there is no vertical portion of the wall next to the LED die that blocks the light or reflects light back into the die. All light incident on the reflective wall is reflected in a forward direction.
- Accordingly, the entire package is a single unit that is the size of the reflective cup. The deep cup is used to shape the beam so no lens is needed. The package has a high reliability since it is a single piece.
- Other embodiments are described.
-
FIG. 1 is a cross-sectional view of a flip-chip LED die mounted on a lead frame molded into a deep reflective cup in accordance with one embodiment of the invention. -
FIG. 2 is a cross-sectional view of a wire-bonded LED die mounted on a lead frame molded into a deep reflective cup in accordance with another embodiment of the invention. -
FIG. 3 is a cross-sectional view of a flip-chip LED die mounted on a lead frame molded into a deep reflective cup, where the lead frame forms bottom pads of the cup, in accordance with another embodiment of the invention. -
FIG. 4 is a cross-sectional view of a wire-bonded LED die mounted on a lead frame molded into a deep reflective cup, where the lead frame forms bottom pads of the cup, in accordance with another embodiment of the invention. -
FIG. 5 is a top down view of the cup portion of any of the embodiments ofFIGS. 1-4 , showing the location of bonding pads in the cup and the location of the LED die within the cup. -
FIG. 6 illustrates the cup and LED die ofFIG. 1 after a phosphor mixture or clear mixture is deposited in the cup to encapsulate the LED die. -
FIG. 7 illustrates the cup and LED die ofFIG. 3 after a phosphor mixture or clear mixture is deposited in the cup to encapsulate the LED die. -
FIG. 8 is a light intensity vs. angle profile for any LED die wavelength between 400-750 nm, illustrating the relatively narrow beam that results with the deep cup ofFIGS. 1-7 . - Elements that are the same or similar are labeled with the same numeral.
-
FIG. 1 illustrates areflective cup package 10 in accordance with one embodiment of the invention. A copper lead frame is stamped from a sheet or sheets to form theleads package 10. There may be an array of lead frames connected together to simplify processing of the packages, and the lead frames are cut after forming the packages to separate out the individual packages. - The area where the leads 12 and 14 are to be bonded to the
LED die 16electrodes bonding pads electrodes 18/20. Any portion of the lead frame that is used for an electrical connection is referred to herein as a bonding pad or an electrode, whether the connection is by solder, ultrasonic weld, wire bond, conductive epoxy, etc. - Over the lead frame is molded a
plastic cup 26. An identical plastic cup is simultaneously molded over each lead frame in the array. Compression molding or injection molding may be used. Preferably, the plastic is thermally conductive. If the plastic is also electrically conductive, for example, due to containing metal particles (for increasing its thermal conductivity), the portion of the lead frame in contact with the plastic has a dielectric coating (not separately shown) formed over it prior to the molding step. - The
cup 26 generally forms a parabola which is orthogonal to the plane of the top light emitting surface ofLED 16, with a circular cross-section which is parallel to the plane of the top light emitting surface ofLED 16, such as shown inFIG. 5 . The shape can also be a compound parabolic concentrator (CPC). In one embodiment, the parabola portion of thecup 26 is about 5 mm deep, its top opening is about 6-7 mm in diameter, and its bottom surface flat area for the LED die 16 is about 1-2 mm in diameter. Thecup 26 slopes up from its bottom surface to its top edge to generally reflect all LED die light upward. The deeper the cup, the narrower the beam, so the beam shape is determined by the cup shape rather than any lens. In the preferred embodiment, no lens is used. - The inside surface of the
cup 26 is then coated with areflective material 28, such as a silver or aluminum film, by sputtering, evaporation, spraying, or other process. The reflection may be specular for the narrowest beam or may be diffusive (such as by using white paint) for a wider beam. A masking process may be used to ensure that thatbonding pads 22/24 are not shorted or coated byreflective material 28. In the alternative, the reflective material may be removed frombonding pad 22/24 and then plated with gold or any other suitable material. - In another embodiment, the reflective film is a dichroic coating tuned to the LED die emission. A masking process may be used to ensure that that the electrodes are not coated with
reflective material 28 or the alternative dichroic coating. Thebottom electrodes 18/20 of the flip-chip LED die 16 are then bonded to thebonding pads 22/24 formed at the ends of theleads - Depending on the application, the outer ends of the
leads light ray 30 emitted from the LED die 16 is shown reflecting off the wall of thecup 26 in a forward direction. Any light rays from the side walls of the LED die 16 will similarly be reflected upwards by thecup 26. - Heat from the LED die 16 is removed by a combination of the air over the LED die 16, the
leads package 10. Thebottom surface 32 of thepackage 10 may be thermally coupled to a substrate using a thermally conductive paste. The substrate and/or thecup 26 may have an aluminum core (not shown) that acts as a heat sink. -
FIG. 5 illustrates the location of thebonding pads bonding pads FIG. 1 may be much wider than the LED die 16 to better sink the heat from the LED die. -
FIG. 2 illustrates apackage 36 similar to that ofFIG. 1 but the LED die 38 has a top electrode that is wire bonded to a bonding pad of thelead 40 via awire 42. The LED die 38 has a bottom electrode bonded to the bonding pad of thelead 44 for good thermal and electrically conductivity. Thecup 26 is otherwise the same. - The LED die may be the type that has two top electrodes, and both electrodes are wire bonded to bonding pads of the leads. The bottom thermal pad of the LED die would be thermally bonded to the plastic base of the
cup 26 using a thermally conductive epoxy. - In
FIGS. 1 and 2 , the width of theleads 12/14 or 40/44 may be at least as wide as the LED die, such as 2 mm wide or more, to provide a good thermal path to the substrate (e.g., a PCB). -
FIG. 3 illustrates an electrode pattern for apackage 48 where the lead frame formsbottom bonding pads plastic cup 54 is molded around the lead frame. The top and bottom surfaces of the leads may be plated with gold or other metal to enhance bonding to the LED die 16 electrodes and the substrate electrodes. Gold balls, solder, or other bonding techniques may be used instead of plating.FIG. 3 showstop bonding pads bottom electrodes package 48 to maximize thermal contact with the substrate. Thepackage 48 provides better thermal conduction between the LED die 16 and the substrate than thepackage 10 ofFIG. 1 . - The bonding pad configuration shown in
FIG. 5 may also apply toFIG. 3 . -
FIG. 4 illustrates apackage 58 similar to that ofFIG. 3 but the top electrode of the LED die 38 is connected to thetop bonding pad 60 by thewire 42. - The LED die may also have two top electrodes wire bonded to the top bonding pads of the lead frame, and the bottom thermal pad of the LED die is thermally coupled to the
package -
FIGS. 6 and 7 illustrate the LED die 16 in thepackages packages encapsulant 64 may be a silicone binder infused with phosphor powder, such as YAG phosphor or red and green phosphor. If the LED die 16 emits blue light, some of the blue light will leak through and combine with the phosphor light to produce white light. Any color may be generated by the selection of the phosphor. Aphosphor particle 66 is shown emitting ayellow light ray 68 that mixes with the LED die's bluelight ray 30 to create white light. - The
encapsulant 64 may instead be clear or diffusing. Silicone may be used. A diffusing material may be TiO.sub.2 (white) particles in the silicone. - The phosphor may even be a separate layer covering the LED die 16 prior to depositing the
encapsulant 64. - In contrast to
FIGS. 6 and 7 , prior art shallow cups, which are used to restrict side light, are typically completely filled with an encapsulant due to the very small volume of the cup. A lens in then typically mounted over the shallow cup. -
FIGS. 6 and 7 also show the leads 12/14 andbottom pads 50/52 bonded (e.g., soldered) to respective pads or traces 70-73 on asubstrate 76/78, such as a PCB. Thesubstrate 76/78 may have a metal core (not shown) for conducting the heat away from the LED die 16. - In another embodiment, the leads extend from a single side of the package and form male connectors (electrodes) for a socket or for other types of female connectors.
-
FIG. 8 is a light intensity vs. angle profile of a 5 mm deep cup having parabolic reflective walls. The units on the y axis convey the relative flux rather than an absolute value. The beam is extremely well-defined, narrow, and symmetrical about the center axis of the LED die (at 90 degrees). The beam can be shaped by the cup rather than a lens. Cups having depths greater than 5 mm are also envisioned for a narrower beam. By using the deep cup package, even a low power LED may be used to generate a very bright but narrow beam. - The resulting packages are essentially a minimum possible size, given that the cup must have certain dimensions for the desired light emission.
- If the plastic cup is formed of a white plastic, then no reflective film is required to be deposited on the cup walls if a diffused reflection is desired.
- Although plastic has been used in the example of the moldable material, any other suitable moldable material may be used for the cup.
- While particular embodiments of the present invention have been shown and described, it will be obvious to those skilled in the art that changes and modifications may be made without departing from this invention in its broader aspects and, therefore, the appended claims are to encompass within their scope all such changes and modifications as fall within the true spirit and scope of this invention.
Claims (20)
Priority Applications (1)
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US17/549,278 US20220102599A1 (en) | 2014-01-08 | 2021-12-13 | Deep molded reflector cup used as complete led package |
Applications Claiming Priority (4)
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US201461924740P | 2014-01-08 | 2014-01-08 | |
PCT/IB2014/067266 WO2015104619A1 (en) | 2014-01-08 | 2014-12-23 | Deep molded reflector cup used as complete led package |
US201615104475A | 2016-06-14 | 2016-06-14 | |
US17/549,278 US20220102599A1 (en) | 2014-01-08 | 2021-12-13 | Deep molded reflector cup used as complete led package |
Related Parent Applications (2)
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PCT/IB2014/067266 Continuation WO2015104619A1 (en) | 2014-01-08 | 2014-12-23 | Deep molded reflector cup used as complete led package |
US15/104,475 Continuation US11227982B2 (en) | 2014-01-08 | 2014-12-23 | Deep molded reflector cup used as complete LED package |
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US20220102599A1 true US20220102599A1 (en) | 2022-03-31 |
Family
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US15/104,475 Active US11227982B2 (en) | 2014-01-08 | 2014-12-23 | Deep molded reflector cup used as complete LED package |
US17/549,278 Pending US20220102599A1 (en) | 2014-01-08 | 2021-12-13 | Deep molded reflector cup used as complete led package |
Family Applications Before (1)
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US15/104,475 Active US11227982B2 (en) | 2014-01-08 | 2014-12-23 | Deep molded reflector cup used as complete LED package |
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US (2) | US11227982B2 (en) |
EP (1) | EP3092668B1 (en) |
JP (1) | JP6847661B2 (en) |
KR (1) | KR20160106153A (en) |
CN (1) | CN105874620B (en) |
WO (1) | WO2015104619A1 (en) |
Families Citing this family (2)
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US10686109B2 (en) | 2016-12-30 | 2020-06-16 | Lumileds Llc | LED package using electroform stencil printing |
JP2022517870A (en) * | 2019-03-11 | 2022-03-10 | ルミレッズ リミテッド ライアビリティ カンパニー | Light extraction bridge in the cup |
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Also Published As
Publication number | Publication date |
---|---|
WO2015104619A1 (en) | 2015-07-16 |
CN105874620B (en) | 2019-03-29 |
CN105874620A (en) | 2016-08-17 |
JP6847661B2 (en) | 2021-03-24 |
US11227982B2 (en) | 2022-01-18 |
EP3092668A1 (en) | 2016-11-16 |
US20160322549A1 (en) | 2016-11-03 |
JP2017502523A (en) | 2017-01-19 |
EP3092668B1 (en) | 2021-03-31 |
KR20160106153A (en) | 2016-09-09 |
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