CN203871325U - Aluminium nitride ceramic bracket - Google Patents

Aluminium nitride ceramic bracket Download PDF

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Publication number
CN203871325U
CN203871325U CN201420259690.8U CN201420259690U CN203871325U CN 203871325 U CN203871325 U CN 203871325U CN 201420259690 U CN201420259690 U CN 201420259690U CN 203871325 U CN203871325 U CN 203871325U
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CN
China
Prior art keywords
aluminium nitride
chip
wall structure
nitride ceramics
rack body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420259690.8U
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Chinese (zh)
Inventor
王志成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Ge Tian Photoelectric Co Ltd
Original Assignee
Shenzhen Ge Tian Photoelectric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Ge Tian Photoelectric Co Ltd filed Critical Shenzhen Ge Tian Photoelectric Co Ltd
Priority to CN201420259690.8U priority Critical patent/CN203871325U/en
Application granted granted Critical
Publication of CN203871325U publication Critical patent/CN203871325U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model discloses an aluminium nitride ceramic bracket. The structure includes a bracket body made of aluminium nitride ceramic, a plurality of wafer fixing areas are arranged on one side of the bracket body, a wafer fixing groove having a retaining wall structure is formed after dam wall glue is applied in the periphery of each wafer fixing area, and a flip chip is arranged on the bottom of each wafer fixing groove; convex lens structures are formed after fluorescent powder glue is coated and molding glue is dispensed in sequence on the surfaces of the flip chips; and a positive electrode and a negative electrode which are used for being welded to an external supply lead are arranged on two side edges of the bracket body. The design of the retaining wall structure not only has a function of eutectic positioning of the flip chips, but can also prevent fluorescent powder of the wafer fixing areas overflows and adheres together, and the aluminium nitride ceramic bracket also has the characteristics of reasonable design, small size, convenient use, firm chip bonding and no easy disengagement of the chip, high luminous flux and good lighting efficiency of an LED lamp packaged by using the aluminium nitride ceramic bracket, good coefficient of heat conduction, advanced production technology, high production efficiency and the like.

Description

Aluminium nitride ceramics support
Technical field
The utility model relates to lighting field, relates in particular to a kind of aluminium nitride ceramics support.
Background technology
LED support is a kind of base electronic component; it is one of critical elements of LED encapsulation; being mainly LED chip and interconnection line provides mechanical carrying, support, air-tightness protection and promotes the functions such as LED device heat radiation; in recent years; improvement along with semi-conducting material and packaging technology; the raising of luminous flux and light extraction efficiency, the LED lamp of power-type is widely used in urban look, traffic sign, automotive lighting, billboard, tunnel.For these LED lamps, LED support requires to have high electric insulation, high stability, high-termal conductivity and the thermal coefficient of expansion mating with chip, planarization and higher intensity.And existing LED lamp adopts metallic support to encapsulate mostly, there is following defect in the encapsulation of metallic support: LED lamp is the some glue that need to carry out phosphor gel and enclosure wall glue in the process of encapsulation, because enclosure wall glue height is limited, therefore in operating process, phosphor gel is easy to occur overflow phenomena, cause the out-of-flatness of glue face, phosphor gel amount is inhomogeneous, the coefficient of heat conduction is poor, and chip is directly to adopt old technique elargol or insulating cement die bond on metallic support, and the electrode on chip is by gold thread and heat-radiating substrate welding, after using for a long time, elargol is aging, can there is the phenomenon coming off because of environmental impact in chip, and then affected useful life of LED lamp.
Utility model content
For the weak point existing in above-mentioned technology, the utility model provides the aluminium nitride ceramics that a kind of coefficient of heat conduction is good, chips incorporate is firm, production technology is advanced and radiating efficiency is high support, by the design of barrier wall structure, can avoid overflowing mutually adhesion between the phosphor gel of crystal bonding area.
For achieving the above object, the utility model provides a kind of aluminium nitride ceramics support, comprise the rack body of being made by aluminium nitride ceramics, in the one side of described rack body, be evenly provided with a plurality of crystal bonding areas, after surrounding's box dam enclosure wall glue of each crystal bonding area, form and there is the die bond groove of barrier wall structure, and on the bottom land of each die bond groove, all cover crystalline substance and have flip-chip; After applying successively phosphor gel on the surface of described flip-chip and putting gum forming glue, form convex lens structures; And be also provided with for the positive electrode with external power source wire bonds and negative electrode on the dual-side of described rack body.
Wherein, the another side of described rack body is provided with the ceramic pad with heat-radiating substrate reflow soldering.
Wherein, on the surface of described rack body, plating has gold layer or silver layer.
Wherein, on the bottom land of described each die bond groove, be equipped with the location hole for die bond location flip-chip.
Wherein, described barrier wall structure is circular barrier wall structure or square barrier wall structure.
The beneficial effects of the utility model: compared with prior art, the aluminium nitride ceramics support that the utility model provides, in the one side of rack body, be evenly provided with a plurality of crystal bonding areas, and after surrounding's box dam enclosure wall glue of each crystal bonding area, form the die bond groove with barrier wall structure, the design of this barrier wall structure not only has the effect of flip-chip eutectic location, and can avoid overflowing mutually adhesion between the phosphor gel of crystal bonding area; In addition, adopt aluminium nitride ceramics to make rack body, can realize good thermoelectricity separating effect, flip-chip employing is covered brilliant mode and is fixed on die bond groove, not only can avoid in elargol die bond process the inhomogeneous loss that causes luminous flux because of elargol amount, and make the combination of flip-chip and support very firm, and adhesion is very good, and can there is not the phenomenon coming off because of environmental impact in chip.The utlity model has reasonable in design, volume is little, easy to use, the firm difficult drop-off of chips incorporate, the high light efficiency of luminous flux is good, the coefficient of heat conduction is good, production technology is advanced and production efficiency high.
Accompanying drawing explanation
Fig. 1 is the vertical view of aluminium nitride ceramics support in the utility model;
Fig. 2 is the upward view of aluminium nitride ceramics support in the utility model;
Fig. 3 is the structure chart of flip-chip in the utility model.
Main element symbol description is as follows:
1, rack body 2, flip-chip
11, barrier wall structure 12, die bond groove
13, positive electrode 14, negative electrode
15, ceramic pad 16, silver layer
17, location hole
Embodiment
In order more clearly to explain the utility model, below in conjunction with accompanying drawing, the utility model is further described.
Refer to Fig. 1-3, aluminium nitride ceramics support of the present utility model, comprise the rack body 1 of being made by aluminium nitride ceramics, in the one side of rack body 1, be evenly provided with a plurality of crystal bonding areas, after surrounding's box dam enclosure wall glue of each crystal bonding area, form the die bond groove 12 with barrier wall structure 11, and all covering crystalline substance on the bottom land of each die bond groove 12 has flip-chip 2, after applying successively phosphor gel on the surface of flip-chip 2 and putting gum forming glue, form convex lens structures; And on the dual-side of rack body 1, be also provided with for the positive electrode 13 with external power source wire bonds and negative electrode 14.In this structure, the barrier wall structure of each crystal bonding area is all to adopt DAM technique to make and form with epoxide resin material die sinking.
Situation compared to prior art, the aluminium nitride ceramics support that the utility model provides, in the one side of rack body 1, be evenly provided with a plurality of crystal bonding areas, and after surrounding's box dam enclosure wall glue of each crystal bonding area, form the die bond groove 12 with barrier wall structure 11, the design of this barrier wall structure 11 not only has the effect of flip-chip 2 eutectics location, and can avoid overflowing mutually adhesion between the phosphor gel of crystal bonding area; In addition, adopt aluminium nitride ceramics to make rack body 1, can realize good thermoelectricity separating effect, flip-chip 2 can adopt and cover brilliant mode and be fixed on die bond groove 12, not only can avoid in elargol die bond process the inhomogeneous loss that causes luminous flux because of elargol amount, and make flip-chip 2 very firm with the combination of support 1, and adhesion is very good, and can there is not the phenomenon coming off because of environmental impact in chip; Meanwhile, after applying phosphor gel and putting gum forming glue, form convex lens structures, make this product there is better optically focused effect.The utlity model has reasonable in design, volume is little, easy to use, the firm difficult drop-off of chips incorporate, the high light efficiency of luminous flux is good, the coefficient of heat conduction is good, difficult drop-off, production technology advanced person and production efficiency high.
In the present embodiment, the another side of rack body 1 is provided with the ceramic pad 15 with heat-radiating substrate reflow soldering.In this structure, positive electrode 13 and negative electrode 14 are arranged on to the side of rack body 1, and realize reflow soldering by ceramic pad 15, not only make the coefficient of heat conduction increase, and performance is more stable.In this structure, ceramic pad 15 is cross form, certainly, is not limited to this shape, can also be square or difform, if the change to ceramic pad 15 structures all falls in the protection range of this case.
In the present embodiment; on the surface of rack body 1, plating has gold layer or silver layer; it in this structure, is the form that adopts silver layer 16; on the bottom land of each die bond groove 12, be equipped with for the location hole 17 for die bond location flip-chip 2; in covering brilliant process; can first scaling powder be evenly coated in die bond groove 12; again flip-chip 2 being aimed to location hole 17 is fixed in die bond groove 12; finally by eutectic furnace, flip-chip 2 is covered brilliant on this die bond groove 12 under the protection of nitrogen atmosphere; certainly; also Design Orientation hole not, directly die bond.
In the present embodiment, barrier wall structure 11 is circular barrier wall structure or square barrier wall structure.Certainly, barrier wall structure 11 can also be other shapes such as ellipse or polygon, if the change to barrier wall structure 11 shapes all falls in the protection range of this case.
Disclosed is above only several specific embodiment of the present utility model, but the utility model is not limited thereto, and the changes that any person skilled in the art can think of all should fall into protection range of the present utility model.

Claims (5)

1. an aluminium nitride ceramics support, it is characterized in that, comprise the rack body of being made by aluminium nitride ceramics, in the one side of described rack body, be evenly provided with a plurality of crystal bonding areas, after surrounding's box dam enclosure wall glue of each crystal bonding area, form and there is the die bond groove of barrier wall structure, and on the bottom land of each die bond groove, all cover crystalline substance and have flip-chip; After applying successively phosphor gel on the surface of described flip-chip and putting gum forming glue, form convex lens structures; And be also provided with for the positive electrode with external power source wire bonds and negative electrode on the dual-side of described rack body.
2. aluminium nitride ceramics support according to claim 1, is characterized in that, the another side of described rack body is provided with the ceramic pad with heat-radiating substrate reflow soldering.
3. aluminium nitride ceramics support according to claim 2, is characterized in that, on the surface of described rack body, plating has gold layer or silver layer.
4. aluminium nitride ceramics support according to claim 1, is characterized in that, is equipped with the location hole for die bond location flip-chip on the bottom land of described each die bond groove.
5. aluminium nitride ceramics support according to claim 1, is characterized in that, described barrier wall structure is circular barrier wall structure or square barrier wall structure.
CN201420259690.8U 2014-05-21 2014-05-21 Aluminium nitride ceramic bracket Expired - Fee Related CN203871325U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420259690.8U CN203871325U (en) 2014-05-21 2014-05-21 Aluminium nitride ceramic bracket

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420259690.8U CN203871325U (en) 2014-05-21 2014-05-21 Aluminium nitride ceramic bracket

Publications (1)

Publication Number Publication Date
CN203871325U true CN203871325U (en) 2014-10-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420259690.8U Expired - Fee Related CN203871325U (en) 2014-05-21 2014-05-21 Aluminium nitride ceramic bracket

Country Status (1)

Country Link
CN (1) CN203871325U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107845714A (en) * 2017-10-30 2018-03-27 深圳市蓝谱里克科技有限公司 A kind of COB packing forms for high-power LED chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107845714A (en) * 2017-10-30 2018-03-27 深圳市蓝谱里克科技有限公司 A kind of COB packing forms for high-power LED chip
CN107845714B (en) * 2017-10-30 2020-08-28 深圳市蓝谱里克科技有限公司 COB packaging form for high-power LED chip

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20141008

Termination date: 20180521

CF01 Termination of patent right due to non-payment of annual fee