CN105098031A - Chip-on-board (COB) light source of flip chip mining lamp - Google Patents
Chip-on-board (COB) light source of flip chip mining lamp Download PDFInfo
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- CN105098031A CN105098031A CN201510400491.3A CN201510400491A CN105098031A CN 105098031 A CN105098031 A CN 105098031A CN 201510400491 A CN201510400491 A CN 201510400491A CN 105098031 A CN105098031 A CN 105098031A
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- Prior art keywords
- light source
- aluminium nitride
- nitride ceramics
- optical glass
- glass lens
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- 238000005065 mining Methods 0.000 title abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000000919 ceramic Substances 0.000 claims abstract description 60
- 229910052802 copper Inorganic materials 0.000 claims abstract description 49
- 239000010949 copper Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000005304 optical glass Substances 0.000 claims abstract description 40
- 239000013078 crystal Substances 0.000 claims abstract description 36
- 239000011889 copper foil Substances 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 8
- 238000005476 soldering Methods 0.000 claims abstract description 7
- 229910017083 AlN Inorganic materials 0.000 claims description 53
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 53
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- 239000003292 glue Substances 0.000 claims description 8
- 239000002585 base Substances 0.000 claims description 7
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 abstract 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 3
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 230000007774 longterm Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The embodiment of the invention discloses a chip-on-board (COB) light source of a flip chip mining lamp. The COB light source of the flip chip mining lamp comprises a cooling copper substrate, an aluminum nitride ceramic bracket and an optical glass lens, wherein the cooling copper substrate comprises a sink table structure, a through hole structure and a copper foil line; the aluminum nitride ceramic bracket comprises a bracket body which is made of aluminum nitride ceramic; a plurality of solid crystal regions are evenly arranged on one surface of the bracket body; and the optical glass lens is adhered right above a chip packaging block on the cooling copper substrate, so that the problem in a light-emitting diode (LED) light source produced by a flip chip technology is avoided; crystal fixing is realized by welding; a bonding wire is not needed; and a eutectic bracket is connected with a cooling substrate in a reflow soldering manner, so that the anti-vibration stability is very good.
Description
Technical field
The embodiment of the present invention relates to the technical field of illumination, particularly relates to one and covers brilliant bulkhead lamp capable COB light source.
Background technology
At present, the bulkhead lamp capable lighting source product major part that market is applied is high-pressure sodium lamp, fraction adopts the solid state LED lighting source product that direct die bond the traditional handicraft mode of bonding wire are produced on aluminium base, copper base or ceramic substrate, additional secondary lens.Because common LED light source needs to use insulating cement or elargol to carry out die bond mostly, its thermal resistance is generally at 12 DEG C/W, and thermal resistance is relatively high, and light source heat radiation exists very large problem.The LED light source adopting traditional bonding wire craft to make in addition, can not bear larger pulse current, more can not long-time stable work under the driving of big current; Because the driving of pulse current excessive or long-time big current (1A) can cause the colloid of product, gold thread and chip P-N junction all can be greatly affected, easily cause colloid expanded by heating, break the problem such as dead lamp and junction temperature of chip rising.And common LED bulkhead lamp capable light source can not stand dither for a long time, because long-term dither very easily causes light source to occur the problems such as dead lamp, loose contact that break, greatly reduce the useful life of product, the light efficiency of common LED bulkhead lamp capable is generally at 70-90lm/w, and light extraction efficiency is lower and light source and secondary lens are splits.
Summary of the invention
The object of the embodiment of the present invention is that proposing one covers brilliant bulkhead lamp capable COB light source, is intended to solve LED bay light light source and can not stands dither for a long time, because long-term dither very easily causes light source to occur the problems such as dead lamp, loose contact that break.
For reaching this object, the embodiment of the present invention by the following technical solutions:
One covers brilliant bulkhead lamp capable COB light source, describedly cover brilliant bulkhead lamp capable COB light source and comprise radiating copper substrate, aluminium nitride ceramics support and optical glass lens, described radiating copper substrate comprises heavy stand structure, through-hole structure and copper foil circuit, described aluminium nitride ceramics support comprises the rack body be made up of aluminium nitride ceramics, the one side of described support support body is evenly provided with multiple crystal bonding area, and described optical glass lens is pasted onto directly over the chip package block on described radiating copper substrate.
Preferably, the refraction coefficient of described optical glass lens is 1.474.
Preferably, the acid resistance of described optical glass lens reaches 1 grade, and alkali resistance reaches A level.
Preferably, the coefficient of expansion of described optical glass lens is 3.3.
Preferably, described radiating copper substrate comprises heavy stand structure, through-hole structure and copper foil circuit, and the described heavy stand structure of described radiating copper base version upper surface, described through-hole structure and described copper foil circuit all have electrogilding process.
Preferably, described radiating copper substrate comprises the through-hole structure of the dark heavy stand structure of 0.15mm and 3.5mm.
Preferably, the overall dimension of described radiating copper substrate is 55mm*40mm.
Preferably, the conductive coefficient of described radiating copper substrate is comparatively up to 400 watts/more than meter Du.
Preferably, described aluminium nitride ceramics support comprises the rack body be made up of aluminium nitride ceramics, the one side of described support support body is evenly provided with multiple crystal bonding area, the back side of described aluminium nitride ceramics support, all there is electrosilvering process at crystal bonding area and the pin place in front, the die bond groove with barrier wall structure is formed after surrounding's box dam enclosure wall glue of each crystal bonding area, the crystal covered chip of the gold-tin alloy that the bottom of described die bond groove is coated with sticks to the crystal bonding area of described aluminium nitride ceramics support by scaling powder, the number in parallel of the crystal bonding area die bond of described aluminium nitride ceramics support comprises the number pre-set.
Preferably, the dual-side of described aluminium nitride ceramics rack body is provided with positive electrode for welding with external power leads and negative electrode.
Preferably, the another side of described aluminium nitride ceramics support is provided with the ceramic pad with the reflow soldering of described radiating copper substrate.
Preferably, on the surface of described aluminium nitride ceramics rack body, plating has layer gold or silver layer.
Preferably, the bottom land of described each die bond groove is equipped with the location hole of locating described crystal covered chip for die bond.
Preferably, described barrier wall structure is circular barrier wall structure or square barrier wall structure or rectangle barrier wall structure.
The embodiment of the present invention provides one to cover brilliant bulkhead lamp capable COB light source, describedly cover brilliant bulkhead lamp capable COB light source and comprise radiating copper substrate, aluminium nitride ceramics support and optical glass lens, described radiating copper substrate comprises heavy stand structure, through-hole structure and copper foil circuit, described aluminium nitride ceramics support comprises the rack body be made up of aluminium nitride ceramics, the one side of described support support body is evenly provided with multiple crystal bonding area, described optical glass lens is pasted onto directly over the chip package block on described radiating copper substrate, thus just there is not this problem with the LED light source covering brilliant explained hereafter, because it adopts welding die bond, coupled together without the need to bonding wire and between eutectic support and heat-radiating substrate by reflow soldering again, its vibrostability is very good.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation covering brilliant bulkhead lamp capable COB light source that the embodiment of the present invention provides;
Fig. 2 is the structural representation of a kind of utility model optical glass lens that the embodiment of the present invention provides;
Fig. 3 is the structural representation of a kind of radiating copper substrate that the embodiment of the present invention provides;
Fig. 4 is the vertical view of a kind of aluminium nitride ceramics support that the embodiment of the present invention provides;
Fig. 5 is the upward view of a kind of aluminium nitride ceramics support that the embodiment of the present invention provides;
Main element symbol description:
101 is optical glass lens, 102 is radiating copper substrate, and 103 is aluminium nitride ceramics support, and 201 is optical glass lens, 202 is radiating copper substrate, 301 is heavy stand structure, and 302 is through-hole structure, and 303 is copper foil circuit, 401 is the positive electrode pad of aluminium nitride ceramics support, 402 is the negative electrode pad of aluminium nitride ceramics support, and 403 is die bond groove, and 404 is crystal bonding area.
Embodiment
Below in conjunction with drawings and Examples, the embodiment of the present invention is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the embodiment of the present invention, but not the restriction to the embodiment of the present invention.It also should be noted that, for convenience of description, illustrate only the part relevant to the embodiment of the present invention in accompanying drawing but not entire infrastructure.
Embodiment one
A kind of structural representation covering brilliant bulkhead lamp capable COB light source that the embodiment of the present invention provides with reference to figure 1, Fig. 1.
In FIG, describedly cover brilliant bulkhead lamp capable COB light source and comprise radiating copper substrate 102, aluminium nitride ceramics support 103 and optical glass lens 101, described radiating copper substrate 102 comprises heavy stand structure, through-hole structure and copper foil circuit, described aluminium nitride ceramics support 103 comprises the rack body be made up of aluminium nitride ceramics, the one side of described support support body is evenly provided with multiple crystal bonding area, and described optical glass lens 101 is pasted onto directly over the chip package block on described radiating copper substrate 102.
The embodiment of the present invention provides one to cover brilliant bulkhead lamp capable COB light source, describedly cover brilliant bulkhead lamp capable COB light source and comprise radiating copper substrate, aluminium nitride ceramics support and optical glass lens, described radiating copper substrate comprises heavy stand structure, through-hole structure and copper foil circuit, described aluminium nitride ceramics support comprises the rack body be made up of aluminium nitride ceramics, the one side of described support support body is evenly provided with multiple crystal bonding area, described optical glass lens is pasted onto directly over the chip package block on described radiating copper substrate, thus just there is not this problem with the LED light source covering brilliant explained hereafter, because it adopts welding die bond, coupled together without the need to bonding wire and between eutectic support and heat-radiating substrate by reflow soldering again, its vibrostability is very good.
Embodiment two
With reference to the structural representation that figure 2, Fig. 2 is a kind of optical glass lens that the embodiment of the present invention provides.
In fig. 2, there is circular groove the middle, bottom of described optical glass lens 201, and there is frosted process at the edge of described optical glass lens 201; Described optical glass lens 201 is pasted onto directly over the chip package block on radiating copper substrate 202.
The refraction coefficient of described optical glass lens is 1.474.
The acid resistance of described optical glass lens reaches 1 grade, and alkali resistance reaches A level.
The coefficient of expansion of described optical glass lens is 3.3.
Concrete, it is high, wear-resistant that the material of optical glass lens has transparency, smooth surface, cleaning easily, the advantages such as health; The coefficient of expansion of this optical glass lens is 3.3, the high-boron-silicon glass coefficient of expansion is low, is generally to be taken out by glass to water the hot water just opened from refrigerating chamber at once, and glass can not break, the glassware of individual layer directly can enter microwave oven, and can be placed on naked light dry combustion method 20 minutes.
The invention provides a kind of optical glass lens, there is circular groove the middle, bottom of described optical glass lens, and there is frosted process at the edge of described optical glass lens; Described optical glass lens is pasted onto directly over the chip package block on radiating copper substrate, thus the use of solution light source terminal needs the problem selecting rational secondary lens.
Embodiment three
With reference to the structural representation that figure 3, Fig. 3 is a kind of radiating copper substrate that the embodiment of the present invention provides.
In figure 3, described radiating copper substrate comprises heavy stand structure 301, through-hole structure 302 and copper foil circuit 303, described heavy stand structure 301, described through-hole structure 302 and the described copper foil circuit 303 of described radiating copper base version upper surface and all have electrogilding process.
Concrete, in figure 3, the region of square region such as 301 marks is heavy stand structure, and the region of border circular areas such as 302 marks is through-hole structure, and the region beyond 301 and 302 marks is copper foil circuit.
Preferably, described radiating copper substrate comprises the through-hole structure 102 of the dark heavy stand structure 101 of 0.15mm and 3.5mm.
Preferably, the overall dimension of described radiating copper substrate is 55mm*40mm.
Preferably, the conductive coefficient of described radiating copper substrate is comparatively up to 400 watts/more than meter Du.
The invention provides a kind of radiating copper substrate, described radiating copper substrate comprises heavy stand structure 301, through-hole structure 302 and copper foil circuit 303, described heavy stand structure 301, described through-hole structure 302 and the described copper foil circuit 303 of described radiating copper base version upper surface and all have electrogilding process, thus realize the object that light source integral heat sink efficiency is high, light source can bear long-term big current steady operation.
Embodiment four
With reference to the vertical view that figure 4, Fig. 4 is a kind of aluminium nitride ceramics support that the embodiment of the present invention provides.
With reference to the upward view that figure 5, Fig. 5 is a kind of aluminium nitride ceramics support that the embodiment of the present invention provides;
In figs. 4-5, described aluminium nitride ceramics support comprises the rack body be made up of aluminium nitride ceramics, the one side of described support support body is evenly provided with multiple crystal bonding area 404, the back side of described aluminium nitride ceramics support, all there is electrogilding process at crystal bonding area 404 and the pin place in front, the die bond groove 403 with barrier wall structure is formed after surrounding's box dam enclosure wall glue of each crystal bonding area 404, the crystal covered chip of the gold-tin alloy that the bottom of described die bond groove 403 is coated with sticks to the crystal bonding area 404 of described aluminium nitride ceramics support by scaling powder, the number in parallel of crystal bonding area 404 die bond of described aluminium nitride ceramics support comprises the number pre-set.
The dual-side of described aluminium nitride ceramics rack body is provided with positive electrode 401 for welding with external power leads and negative electrode 402.
The another side of described aluminium nitride ceramics support is provided with the ceramic pad with the reflow soldering of described radiating copper substrate.
On the surface of described aluminium nitride ceramics rack body, plating has layer gold or silver layer.
The bottom land of described each die bond groove is equipped with the location hole of locating described crystal covered chip for die bond.
Described barrier wall structure is circular barrier wall structure or square barrier wall structure or rectangle barrier wall structure.
The invention provides a kind of aluminium nitride ceramics support, described aluminium nitride ceramics support comprises the rack body be made up of aluminium nitride ceramics, the one side of described support support body is evenly provided with multiple crystal bonding area, the back side of described aluminium nitride ceramics support, all there is electrogilding process at crystal bonding area and the pin place in front, the die bond groove with barrier wall structure is formed after surrounding's box dam enclosure wall glue of each crystal bonding area, the crystal covered chip of the gold-tin alloy that the bottom of described die bond groove is coated with sticks to the crystal bonding area of described aluminium nitride ceramics support by scaling powder, the number in parallel of the crystal bonding area die bond of described aluminium nitride ceramics support comprises the number pre-set, good thermoelectricity separating effect can be realized, flip-chip adopts the mode covering crystalline substance to be fixed on die bond groove, not only can avoid the uneven loss causing luminous flux because of elargol amount in elargol die bond process, and make the combination of flip-chip and support very firm, adhesion is very good, the phenomenon come off can not be there is in chip because of environmental impact.
One to the description of embodiment four in conjunction with the embodiments, provided by the invention a kind of cover brilliant industrial and mineral COB light source chip be adopt high thermal conductivity alloy welding die bond, instead of the elargol in traditional handicraft or insulating cement die bond, make chip can not occur obscission because of environmental impact.The aluminium nitride ceramics support adopted can realize good thermoelectricity separating effect, high pressure resistantly reaches more than 3000V.Adopt the large red metal heat-radiating substrate of conductive coefficient height area of dissipation, crystal covered chip in conjunction with eutectic technology, greatly optimize the heat dispersion of product, make product thermal resistance be reduced to 0.5 DEG C/W by 12 DEG C/W, solve the difficult problem of heat radiation of product.Common LED bulkhead lamp capable light source can not stand dither for a long time, because long-term dither very easily causes light source to occur the problems such as dead lamp, loose contact that break, greatly reduces the useful life of product; And adopt the LED light source covering brilliant explained hereafter just to there is not this problem, because of its adopt welding die bond, again without the need to bonding wire and be coupled together by reflow soldering between eutectic support and heat-radiating substrate, its vibrostability is very good; And owing to encapsulating without gold thread, single chips also there will not be the dead lamp problem of broken string under the driving of 350mA-1000mA electric current; In addition, with high transmission rate ageing-resistant performance excellent high-performance glue high transmission rate optical glass lens is pasted on directly over the chip package block having applied fluorescent material, lens are directly designed on light source product, eliminate the problem of the continuation choice for use secondary lens that will face when terminal uses.Owing to having done gold-plated process on Copper Foil design section surface, greatly can improve excellent surface between optical glass lens with radiating copper substrate in conjunction with tension force, make between lens and radiating copper substrate, chip package block in conjunction with close and firm difficult drop-off; And the light that light source emits can form reflection through gold-plated surface, light is reflected and carries out cooperation process through optical glass lens, luminous energy can farthest be utilized, and greatly improves the luminous efficiency of light source, and the gold-tinted circle produced when eliminating luminescence.Not only can protect IC package blocks make glue face not contaminated at the surface design optical glass lens of chip package block; the infiltration of moisture and air can also be prevented; isolated glue face contacts with the direct of environment, slows down the aging of glue face, the useful life of product is greatly improved.
Below the know-why of the embodiment of the present invention is described in conjunction with specific embodiments.These describe the principle just in order to explain the embodiment of the present invention, and can not be interpreted as the restriction to embodiment of the present invention protection range by any way.Based on explanation herein, those skilled in the art does not need to pay other embodiment that performing creative labour can associate the embodiment of the present invention, these modes all by fall into the embodiment of the present invention protection range within.
Claims (10)
1. one kind covers brilliant bulkhead lamp capable COB light source, it is characterized in that, describedly cover brilliant bulkhead lamp capable COB light source and comprise radiating copper substrate, aluminium nitride ceramics support and optical glass lens, described radiating copper substrate comprises heavy stand structure, through-hole structure and copper foil circuit, described aluminium nitride ceramics support comprises the rack body be made up of aluminium nitride ceramics, the one side of described support support body is evenly provided with multiple crystal bonding area, and described optical glass lens is pasted onto directly over the chip package block on described radiating copper substrate.
2. according to claim 1ly cover brilliant bulkhead lamp capable COB light source, it is characterized in that, there is circular groove the middle, bottom of described optical glass lens, and there is frosted process at the edge of described optical glass lens.
3. according to claim 2ly cover brilliant bulkhead lamp capable COB light source, it is characterized in that, the refraction coefficient of described optical glass lens is 1.474;
The acid resistance of described optical glass lens reaches 1 grade, and alkali resistance reaches A level;
The coefficient of expansion of described optical glass lens is 3.3.
4. according to claim 1ly cover brilliant bulkhead lamp capable COB light source, it is characterized in that, described radiating copper substrate comprises heavy stand structure, through-hole structure and copper foil circuit, and the described heavy stand structure of described radiating copper base version upper surface, described through-hole structure and described copper foil circuit all have electrogilding process.
5. according to claim 1ly cover brilliant bulkhead lamp capable COB light source, it is characterized in that, the described heavy stand structure of described radiating copper base version upper surface, described through-hole structure and described copper foil circuit all have electrogilding process.
6. according to claim 1ly cover brilliant bulkhead lamp capable COB light source, it is characterized in that, described radiating copper substrate comprises the through-hole structure of the dark heavy stand structure of 0.15mm and 3.5mm;
The overall dimension of described radiating copper substrate is 55mm*40mm;
The conductive coefficient of described radiating copper substrate is comparatively up to 400 watts/more than meter Du.
7. according to claim 1ly cover brilliant bulkhead lamp capable COB light source, it is characterized in that, described aluminium nitride ceramics support comprises the rack body be made up of aluminium nitride ceramics, the one side of described support support body is evenly provided with multiple crystal bonding area, the back side of described aluminium nitride ceramics support, all there is electrogilding process at crystal bonding area and the pin place in front, the die bond groove with barrier wall structure is formed after surrounding's box dam enclosure wall glue of each crystal bonding area, the crystal covered chip of the gold-tin alloy that the bottom of described die bond groove is coated with sticks to the crystal bonding area of described aluminium nitride ceramics support by scaling powder, the number in parallel of the crystal bonding area die bond of described aluminium nitride ceramics support comprises the number pre-set.
8. according to claim 7ly cover brilliant bulkhead lamp capable COB light source, it is characterized in that, the dual-side of described aluminium nitride ceramics rack body is provided with positive electrode for welding with external power leads and negative electrode.
9. cover brilliant bulkhead lamp capable COB light source according to claim described in 7, it is characterized in that, the another side of described aluminium nitride ceramics support is provided with the ceramic pad with the reflow soldering of described radiating copper substrate.
10. according to claim 7ly cover brilliant bulkhead lamp capable COB light source, it is characterized in that, on the surface of described aluminium nitride ceramics rack body, plating has layer gold or silver layer;
The bottom land of described each die bond groove is equipped with the location hole of locating described crystal covered chip for die bond;
Described barrier wall structure is circular barrier wall structure or square barrier wall structure or rectangle barrier wall structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510400491.3A CN105098031A (en) | 2015-07-09 | 2015-07-09 | Chip-on-board (COB) light source of flip chip mining lamp |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510400491.3A CN105098031A (en) | 2015-07-09 | 2015-07-09 | Chip-on-board (COB) light source of flip chip mining lamp |
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| CN105098031A true CN105098031A (en) | 2015-11-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510400491.3A Pending CN105098031A (en) | 2015-07-09 | 2015-07-09 | Chip-on-board (COB) light source of flip chip mining lamp |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105546499A (en) * | 2016-02-25 | 2016-05-04 | 深圳市格天光电有限公司 | Radiator and flip-chip mining lamp |
| CN105716034A (en) * | 2016-04-21 | 2016-06-29 | 广州市积光电子有限公司 | LED hybrid integrated light source for aquarium illumination |
| CN107146788A (en) * | 2017-05-22 | 2017-09-08 | 华中科技大学鄂州工业技术研究院 | A kind of high-power deep ultraviolet LED/light source module and preparation method thereof |
| CN107316933A (en) * | 2017-07-18 | 2017-11-03 | 中山市圣上光电科技有限公司 | The special LED high beams of high ferro |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104037314A (en) * | 2014-05-21 | 2014-09-10 | 深圳市格天光电有限公司 | Stage light flip-chip chip-on-board (COB) light source and production process thereof |
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| CN204271136U (en) * | 2014-12-06 | 2015-04-15 | 深圳市格天光电有限公司 | The heat-radiating substrate of brilliant COB light source is covered for street lamp |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105546499A (en) * | 2016-02-25 | 2016-05-04 | 深圳市格天光电有限公司 | Radiator and flip-chip mining lamp |
| CN105716034A (en) * | 2016-04-21 | 2016-06-29 | 广州市积光电子有限公司 | LED hybrid integrated light source for aquarium illumination |
| CN107146788A (en) * | 2017-05-22 | 2017-09-08 | 华中科技大学鄂州工业技术研究院 | A kind of high-power deep ultraviolet LED/light source module and preparation method thereof |
| CN107316933A (en) * | 2017-07-18 | 2017-11-03 | 中山市圣上光电科技有限公司 | The special LED high beams of high ferro |
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