CN203434195U - Thermoelectricity-separation COB packaging structure - Google Patents
Thermoelectricity-separation COB packaging structure Download PDFInfo
- Publication number
- CN203434195U CN203434195U CN201320458951.4U CN201320458951U CN203434195U CN 203434195 U CN203434195 U CN 203434195U CN 201320458951 U CN201320458951 U CN 201320458951U CN 203434195 U CN203434195 U CN 203434195U
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- China
- Prior art keywords
- heat
- copper
- thermoelectricity
- substrate
- shortcut
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- Expired - Fee Related
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- 238000000926 separation method Methods 0.000 title claims abstract description 13
- 238000004806 packaging method and process Methods 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052802 copper Inorganic materials 0.000 claims abstract description 28
- 239000010949 copper Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000005619 thermoelectricity Effects 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 241000218202 Coptis Species 0.000 claims description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- WBLJAACUUGHPMU-UHFFFAOYSA-N copper platinum Chemical compound [Cu].[Pt] WBLJAACUUGHPMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000004907 flux Effects 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract 5
- 230000007794 irritation Effects 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Led Device Packages (AREA)
Abstract
The utility model discloses a thermoelectricity-separation COB packaging structure which comprises at least one LED chip and a substrate. Each LED chip is provided with a P pole and an N pole. The substrate comprises a heat-dissipation aluminum substrate, an upper copper circuit, a copper heat shortcut, and an insulating layer. The copper heat shortcut is a copper channel, and the copper channel is disposed between a circuit layer and the heat-dissipation aluminum substrate and can conduct heat easily. The insulating layer is disposed between the upper copper circuit and the heat-dissipation aluminum substrate. The heat of the LED chips is directly conducted to the heat-dissipation aluminum substrate through the copper heat shortcut, and electricity still flows through the upper copper circuit. The structure is called as the thermoelectricity-separation structure. The conduction of heat is not blocked by an interface, thereby achieving good dissipation of heat without increasing cost. The COB structure is good in consistency of a light-emission plane, is wide in irritation angle, is high in luminous efficiency, is uniform and soft in luminescence, has no light spots, and is easy to assemble. The higher the luminous flux of the thermoelectricity-separation structure is, the better the performance of heat dissipation is. Moreover, the service life of a product is prolonged.
Description
Technical field
The utility model relates to LED lighting field, relates in particular to a kind of COB encapsulating structure of thermoelectricity separation.
Background technology
Compare with conventional light source, LED light fixture has the feature of long, the high and low power of light efficiency of life-span, low power consuming.In recent years, white light LEDs is fast-developing, just progressively enters general lighting field.
At present popular COB light source on the market, is that chip is directly consolidated on the copper platinum of aluminium base mostly, though this method can obtain higher luminous flux, caloric value is large.Its passage of heat of current LED light source and conductive channel share simultaneously, and electric channel is mainly that both positive and negative polarity and the solder joint with regard to chip couples together by gold thread, therefore the heat that chip sends can have influence on the reliability of gold thread and copper wire welding, and there is no independently passage of heat, to the light decay of chip, can have a great impact yet.Therefore, need to adopt the novel COB structure of a kind of high heat conduction, high light efficiency.
Summary of the invention
The utility model provides a kind of COB encapsulating structure of thermoelectricity separation.Overcome that existing COB structure radiating effect is bad, cost is high, complex process etc.This novel COB structure exiting surface high conformity of the utility model, lighting angle is wide, and luminous efficiency is high, luminous evenly soft, without hot spot, simple and convenient assembly, this thermoelectricity isolating construction luminous flux is higher, and heat dispersion more can be embodied, and can improve the useful life of product.
The utility model for the method that solves its technical problem and adopt is: a kind of COB encapsulating structure of thermoelectricity separation is provided, and this structure comprises heat-radiating substrate, the hot shortcut of copper, upper copper circuit, insulating barrier, at least one LED chip, fluorescent glue.LED chip is directly solid on the hot shortcut of copper, crosses gold thread be connected with upper copper link tester.The hot shortcut of copper is mainly plated with copper platinum on substrate, is insulating barrier between upper copper circuit and heat-radiating substrate.Heat-radiating substrate is ceramic substrate or is metal aluminum substrate.This substrate is directly connected with radiator, can reach good radiating effect.Fluorescent glue is directly enclosed in and on chip, becomes convex.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the utility model is further illustrated.
Accompanying drawing 1 is the profile that adopts the COB encapsulating structure of thermoelectricity isolation technics
Accompanying drawing 2 is the local structural graphs that adopt the COB encapsulating structure of thermoelectricity isolation technics
Accompanying drawing 3 is the vertical views that adopt the COB encapsulating structure of thermoelectricity isolation technics
Embodiment
Below in conjunction with accompanying drawing, describe the concrete execution mode of the utility model in detail.
As shown in Figure 1, a kind of COB encapsulating structure of thermoelectricity separation, comprises heat-radiating substrate (1), the hot shortcut of copper (2), upper copper circuit (3), insulating barrier (4), at least one LED chip (5), fluorescent glue (6).
Described heat-radiating substrate (1) is ceramic substrate or is metal aluminum substrate.This substrate is directly connected with radiator, can reach good radiating effect.LED chip (5) is directly connected with the hot shortcut of copper (2), and LED chip is connected by gold thread with upper copper circuit (3).It between upper copper circuit and heat-radiating substrate, is insulating barrier (4).The hot shortcut of copper (2) is exactly between circuit layer and San Re Aluminum plate, to output the copper passage of a very easy heat conduction.The heat of LED chip is directly led on radiator aluminium base plate through the hot shortcut of copper, and electricity is still walked upper strata copper wire (3).Fluorescent glue (6) is directly enclosed on LED chip (5) and becomes convex.
This structure is called thermoelectricity isolating construction, and the conduction of heat can not run into the obstruction of interface, can reach better heat radiation, can not increase cost yet.This COB structure exiting surface high conformity, lighting angle is wide, and luminous efficiency is high, luminous evenly soft, without hot spot, simple and convenient assembly, this thermoelectricity isolating construction luminous flux is higher, and heat dispersion more can be embodied, and can improve the useful life of product.
Claims (4)
1. the COB encapsulating structure of a thermoelectricity separation, it is characterized in that: comprise heat-radiating substrate (1), the hot shortcut of copper (2), upper copper circuit (3), insulating barrier (4), at least one LED chip (5), fluorescent glue (6), LED chip (5) comprises a P utmost point and a N utmost point, and the hot shortcut of copper (2) refers at the upper plated with copper platinum of substrate (1).
2. according to right 1, require the COB encapsulating structure of described a kind of thermoelectricity separation, it is characterized in that: LED chip (5) is directly connected with the hot shortcut of copper (2), LED chip is connected by gold thread with upper copper circuit (3), is insulating barrier (4) between upper copper circuit and heat-radiating substrate.
3. according to right 1, require the COB encapsulating structure of described a kind of thermoelectricity separation, it is characterized in that heat-radiating substrate (1) is ceramic substrate or is metal aluminum substrate, this substrate is directly connected with radiator.
4. according to right 1, require the COB encapsulating structure of described a kind of thermoelectricity separation, it is characterized in that: fluorescent glue (6) is directly enclosed in and on LED chip, becomes convex.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320458951.4U CN203434195U (en) | 2013-07-30 | 2013-07-30 | Thermoelectricity-separation COB packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320458951.4U CN203434195U (en) | 2013-07-30 | 2013-07-30 | Thermoelectricity-separation COB packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203434195U true CN203434195U (en) | 2014-02-12 |
Family
ID=50063216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320458951.4U Expired - Fee Related CN203434195U (en) | 2013-07-30 | 2013-07-30 | Thermoelectricity-separation COB packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203434195U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280793A (en) * | 2014-06-19 | 2016-01-27 | 厦门汇耕电子工业有限公司 | Electric-thermal separated, LED chip integrated and high-reflectivity circuit board and manufacture method thereof |
| CN107482001A (en) * | 2017-09-26 | 2017-12-15 | 深圳市立洋光电子股份有限公司 | A kind of super high power COB light source and its manufacture craft |
| CN108644630A (en) * | 2018-06-13 | 2018-10-12 | 宁波升谱光电股份有限公司 | A kind of patch type light modulation toning LED light and preparation method thereof |
-
2013
- 2013-07-30 CN CN201320458951.4U patent/CN203434195U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280793A (en) * | 2014-06-19 | 2016-01-27 | 厦门汇耕电子工业有限公司 | Electric-thermal separated, LED chip integrated and high-reflectivity circuit board and manufacture method thereof |
| CN107482001A (en) * | 2017-09-26 | 2017-12-15 | 深圳市立洋光电子股份有限公司 | A kind of super high power COB light source and its manufacture craft |
| CN108644630A (en) * | 2018-06-13 | 2018-10-12 | 宁波升谱光电股份有限公司 | A kind of patch type light modulation toning LED light and preparation method thereof |
| CN108644630B (en) * | 2018-06-13 | 2024-04-26 | 宁波升谱光电股份有限公司 | SMD dimming and color mixing LED lamp and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140212 |