CN103956356A - Efficient heat conducting large-power LED integration package structure - Google Patents
Efficient heat conducting large-power LED integration package structure Download PDFInfo
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- CN103956356A CN103956356A CN201410176671.3A CN201410176671A CN103956356A CN 103956356 A CN103956356 A CN 103956356A CN 201410176671 A CN201410176671 A CN 201410176671A CN 103956356 A CN103956356 A CN 103956356A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention belongs to the technical field of semiconductor lighting devices, and particularly relates to an efficient heat conducting large-power LED integration package structure. The efficient heat conducting large-power LED integration package structure comprises a first current-conducting board, a first heat-conducting insulating board, a second current-conducting board, a second heat-conducting insulating board and a plurality of LED chips. The current-conducting boards are directly used as a positive electrode and a negative electrode of circuit connection. The current-conducting boards and the heat-conducting insulating boards are arranged in a spaced mode to form a sandwich structure. The positions of boundary surfaces are coated with insulating cement with the high heat conductivity coefficient. The bottoms of the LED chips are directly and adhesively connected with the surface of the lower-layer current-conducting board. The LED chips are connected in parallel or in series or in the mode that series connection and the parallel connection are combined to form a single LED package module, and a larger-power LED module is formed through combination, so that the voltage of the module is improved, and the design requirement of a power source is reduced; the whole integration package structure can be fixed mechanically, no printed circuit boards are needed, the technology is simple and reliable, and the package cost is reduced; the package structure is applicable to the application fields of visual lighting, ultraviolet irradiation and special lighting.
Description
Technical field
The invention belongs to semiconductor lighting device technical field, be specifically related to a kind of large-power light-emitting diodes (LED) integrated encapsulation structure of high-efficiency heat conduction.
Background technology
Fast development along with semiconductor technology, light-emitting diode (LED) relies on the advantages such as volume is little, the life-span is long, reliability is high, brightness is adjustable, and the light source of being made by it, light fixture and ligthing paraphernalia product progress into various visible illumination and ultraviolet irradiation application.Along with people are to the illumination variation of application requirements and the increase of high light flux and high radiant energy flux application demand, the demand of great power LED constantly increases, and specific requirement is also in continuous variation., searchlight standby such as High-Pole Lamp, engineering machinery, harbour machinery, extra large frock, car headlamp, projecting apparatus, traffic shooting illuminating lamp, squid angle lamp, stadium lighting lamp etc. not only to need energy-efficient high-power high-intensity light source, and power density is very high, the size of light fixture and volume are had to strict requirement restriction; And as synthetic in ultra-violet curing, photochemistry and the photo-biological modification etc. at industrial circle, more than the power requirement of the ultraviolet source of application has even reached multikilowatt.
Along with the increase of LED lamp power density, heat dissipation problem becomes one of key obstacle of restriction heavy-power LED product.Especially LED light fixture more than 200 W, heat dissipation characteristics has a strong impact on the performance performance of light fixture.Fixed chip (Chips on board that existing high-power LED encapsulation mainly adopts or direct; COB) integration packaging technology; be about to LED chip and be directly bonded on printed circuit board (PCB), then carry out Bonding, then chip and lead-in wire are sealed to the technology of protection by organic gel.Although existing many research and patent attempt improving the heat dissipation characteristics of COB encapsulation, but the number of levels causing due to its encapsulating structure is many, insulating material and the inevitable problem such as sealing-in adhesives thermal conductivity is low, chip heat conduction contact area is little, cause chip heat to export to the efficiency of radiator lower, limit the heat dissipation characteristics of LED integration packaging, affected the Performance And Reliability of high-power LED lamp.
LED chip level encapsulation at present mainly contains two kinds of structures: plane packaging structure and vertical encapsulating structure.The P type of plane packaging structure LED chip and N-type electrode, at the homonymy of LED, are convenient to realize high-power integrated packaging, but electrode homonymy causes electric current laterally crowded, and local pyrexia amount is high, and P utmost point area coverage is large, affects the light extraction efficiency of chip.And two electrodes of light emitting diode (LED) chip with vertical structure are respectively in the both sides of LED epitaxial loayer, make electric current almost all vertical currents cross LED epitaxial loayer, current density is even, avoided current crowding problem, improved luminous efficiency, and solved the raise problems in terms of light absorption of the P utmost point, under high power density, its light extraction efficiency can reach 3 times of planar structure LED.Vertical encapsulating structure chip becomes the main flow of LED chip just gradually.Because the both positive and negative polarity of vertical encapsulating structure chip lays respectively at the above and below of chip, so during high-power integrated packaging, between chip and heat dissipation metal base plate, must there is insulating barrier.The high-power encapsulating structure of main flow adopts aluminium oxide ceramics as insulating barrier mostly at present, and LED chip is encapsulated on the metal film coating of aluminum oxide substrate.But the conductive coefficient of aluminium oxide ceramics is only 25 W/ (mK) left and right, and much smaller than the conductive coefficient of the common metal such as aluminium 230 W/ (mK), both differ an order of magnitude, and heat can not effectively conduct from chip.Therefore in high-power LED encapsulation, the method because of heat-conducting effect poor, affect light fixture and dispels the heat, restricted the raising of LED lamp power density.
In addition, in prior art, the printed circuit board (PCB) of LED encapsulation mostly adopts Copper Foil to make circuit.But Copper Foil sectional area is little, so current load ability is limited, has also limited the power density of LED light fixture.
Summary of the invention
For the deficiencies in the prior art, the object of this invention is to provide a kind of high-power LED integrated packaging structure of high-efficiency heat conduction, to realize the high-power LED lamp exploitation of high unit are package power.
The high-power LED integrated packaging structure of a kind of high-efficiency heat conduction provided by the invention, it comprises the first conductive plate, the first heat conductive insulating plate, the second conductive plate, the second heat conductive insulating plate and some LED chips; Described the first conductive plate, the first heat conductive insulating plate, the second conductive plate and the second heat conductive insulating plate set gradually from top to bottom, are coated with high heat conductive insulating glue on the contact interface of upper and lower plates; The both positive and negative polarity that described the first conductive plate, the second conductive plate connect as circuit separately or respectively; Described some LED chip adhesions are arranged on the second conductive plate, and its both positive and negative polarity being connected with circuit is connected.
Above-mentioned the first conductive plate comprises left and right two boards, is respectively positive conductive plate and negative conductive plate, is used separately as the both positive and negative polarity that circuit connects; Described the first heat conductive insulating plate is also divided into left and right two boards, its size shape adapts with positive conductive plate, negative conductive plate respectively, described some LED chips are placed between positive conductive plate and negative conductive plate, and the electrode of LED chip is connected with positive conductive plate, negative conductive plate respectively by gold thread.
On above-mentioned the first conductive plate and the first insulation board, some openings are set, some LED chips are placed in opening, and the electrode of LED chip is connected with first, second conductive plate respectively.
Above-mentioned some LED chips are planar structure or vertical stratification, or the mixing of planar structure and vertical stratification.
Above-mentioned the first conductive plate and the second conductive plate are sheet metal or the nonmetal plate for conducting electricity with high thermal conductivity coefficient; Described the first heat conductive insulating plate and the second heat conductive insulating plate are the sheet material that has thermal conductivity and insulating properties concurrently.
Above-mentioned sheet metal is aluminium sheet or copper coin; Described nonmetal plate is carborundum plate; Described the first heat conductive insulating plate and the second heat conductive insulating plate are nitrogenize aluminium sheet.
When on above-mentioned the second conductive plate, adhesion arranges some LED chips, chip egative film is directly bonded on the second conductive plate by high heat conduction viscose glue, scolder or eutectic bonding technology.
Above-mentioned high heat conductive insulating glue adopts aluminium nitride or beryllium nitride high heat conductive insulating powder mixing adhesives to make, more than conductive coefficient reaches 120 W/ (mK); Described high heat-conductivity conducting glue adopts elargol or silver-plated copper glue material to make, more than conductive coefficient reaches 120 W/ (mK).
In the present invention, between the first above-mentioned conductive plate, the first heat conductive insulating plate, the second conductive plate and the second heat conductive insulating plate, adopt screw or other mechanical systems to be fixed and clamped.
In the present invention, LED chip can adopt ultraviolet LED chip, is packaged into the high-power ultraviolet LED light source module of high unit are package power, and a plurality of light source modules are combined into more powerful light source module; Described ultraviolet LED light source module or module can encapsulate other components and parts such as quartz lens, resin material or silicone oil bath; The ultraviolet irradiation applications such as, photo-biological modification synthetic for photocuring, sterilization, photochemistry, material modification, material surface processing.Also can adopt and exempt from packaging LED chips, also can adopt multi-colored led chip mixed light, also can adopt chip to add fluorescent material mode and be packaged into the large power white light LED light fixture of high unit are package power as technology such as phosphor gel coating, remote fluorescence powder plates; Large power white light LED light fixture can be applied to visible lighting field as High-Pole Lamp, stadium lighting, searchlight, cinema lamp etc.Can packaging protection device, be applied to special occasions lighting field as standby in the harbour machinery of hypersaline environment, extra large frock etc.; Described high unit are package power LED light fixture can be used as that volume is little, heat radiation requires special source high, flexible design, as projection lamp, car headlamp, road monitoring shooting light compensating lamp etc.; Described LED light fixture adopts the LED chip of different colours, can be as special sources such as fishing lamp and plant light compensation illuminating lamps.
Compare with existing encapsulating structure, the present invention has following advantage:
1, the present invention adopts conductive plate and heat conductive insulating plate sandwich structure spaced apart, has realized the high-power integrated packaging of high unit are package power.
2, the both positive and negative polarity that the present invention directly connects the conductive plate in encapsulating structure as circuit, conductive plate is welding lead extracted current directly, the sectional area of the sectional area ratio printed circuit board conductor lines of conductive plate has increased more than 10 times simultaneously, the current load ability of LED integrated packaging power source module has been increased more than 10 times than printed circuit board (PCB), greatly improved current load ability, improve unit are package power, solved the current-carrying restricted problem of printed circuit board (PCB).
3, in high-power LED integrated packaging structure of the present invention, LED chip and conductive plate are directly bonding, reduced the number of levels of unlike material and thermal conductivity between LED chip and radiator, and the insulation board of the high-termal conductivity of arranging between conductive plate, effectively reduce internal thermal resistance rate, improve the derivation efficiency of LED chip heat, improved the heat dispersion of LED light fixture.
4, the present invention adopts the mode of parallel connection-series combination, and several LED chips first form a high-power package module, and a plurality of modules reconstruct more powerful module.By changing parallel connection-tandem compound mode of chip and module, can conveniently effectively set operating current and the operating voltage of LED light fixture, not only can realize high-power, high-tension LED module packaging, and reduce the current design requirement of driving power.
5, encapsulating structure of the present invention can be installed fixing mechanically; Heat conductive insulating plate can adopt laser processing mode to process, and processing is simple; And the both positive and negative polarity that conductive plate directly connects as circuit has been avoided the design of printed circuit board (PCB) and the manufacturing process of complexity thereof; Therefore encapsulating structure of the present invention has been simplified manufacture craft, can effectively improve rate of finished products, reduces manufacturing cost.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of high-efficiency heat radiation large-power LED integrated encapsulation structure of the present invention.
Fig. 2 is the sectional view of employing light emitting diode (LED) chip with vertical structure integrating packaging module example of the present invention.
Fig. 3 is the vertical view of employing light emitting diode (LED) chip with vertical structure integrating packaging module example of the present invention.
Fig. 4 is the sectional view of employing planar structure LED chip integrating packaging module example of the present invention.
Fig. 5 is the vertical view of employing planar structure LED chip integrating packaging module example of the present invention.
Number in the figure: the 1-the first conductive plate; The 2-the first heat conductive insulating plate; The 3-the second conductive plate; The 4-the second heat conductive insulating plate; 5-high heat conductive insulating glue; 6-LED chip; 7-high heat-conductivity conducting glue; 8-gold thread; 9-screw; 10-opening; 11-positive conductive plate; 12-negative conductive plate; 13-light emitting diode (LED) chip with vertical structure; 14-planar structure LED chip.
Embodiment
Below in conjunction with accompanying drawing and example, the present invention will be further described.Described embodiment is only part embodiment of the present invention.Embodiment based in the present invention and do not make other all embodiment of creative achievement, belongs to protection scope of the present invention.
Referring to Fig. 1, the high-power LED integrated packaging structure of a kind of high efficiency and heat radiation of the present invention comprises: the first conductive plate 1, the first heat conductive insulating plate 2, the second conductive plate 3, the second heat conductive insulating plate 4 and some LED chips 6, described the first conductive plate 1, the second conductive plate 3 and the first heat conductive insulating plate 2, the second heat conductive insulating plate 4 are intervally arranged, and its contact interface place scribbles the above high heat conductive insulating glue 5 of conductive coefficient 120 W/ (mK) to increase heat conduction contact area.Described the first conductive plate 1, the second conductive plate 3 adopt the high conductivity material such as copper, aluminium, the both positive and negative polarity directly connecting as circuit.Between the first conductive plate 1, the second conductive plate 3, with the first heat conductive insulating plate 2 insulation, the second heat conductive insulating plate 4 has played the insulating effect of the second conductive plate 3 with external heat sink or lamp outer casing.LED chip 6 is arranged on the second conductive plate 3 in certain sequence, and chip bottom is directly bonding by high heat-conductivity conducting glue 7 and conductive plate.
The structure described in Fig. 1 of take is basis, Fig. 2, Fig. 3 is a kind of high-efficiency heat radiation large-power integrating packaging module that adopts light emitting diode (LED) chip with vertical structure of the present invention, comprise: the first conductive plate 1, the first heat conductive insulating plate 2, the second conductive plate 3, the second heat conductive insulating plate 4 and light emitting diode (LED) chip with vertical structure 13, described the first conductive plate 1, the second conductive plate 3 and the first heat conductive insulating plate 2, the second heat conductive insulating plate 4 is intervally arranged, 1/2, 2/3, 3/4 interface scribbles high heat conductive insulating glue 5, and be fixed and clamped with screw 9, on the first conductive plate 1 and upper strata heat conductive insulating plate 3, have the opening 10 of several certain areas, the surface of exposing the second conductive plate 3, light emitting diode (LED) chip with vertical structure 13 is arranged on the second conductive plate 3 in certain sequence.A plurality of light emitting diode (LED) chip with vertical structure 13 parallel connections, chip top electrodes is welded on the first conductive plate 1 by gold thread 8, and chip bottom is directly bonded on the second conductive plate 3 by high heat-conductivity conducting glue 7.
Fig. 4, Fig. 5 are a kind of high-efficiency heat radiation large-power integrating packaging modules that adopts planar structure LED chip of the present invention, comprising: positive conductive plate 11, negative conductive plate 12, the first heat conductive insulating plate 2, the second conductive plate 3 and plane structure LED chip 14.Described positive conductive plate 11 and negative conductive plate 12 are distortion of the first conductive plate 1 described in Fig. 1, described the second conductive plate 3 only plays heat conduction and thermolysis, between conductive plate, with the first heat conductive insulating plate 2, insulate, the interface of conductive plate and heat conductive insulating plate scribbles high heat conductive insulating glue 5, and whole package module is fixed and clamped with screw 9.Between positive conductive plate 11 and negative conductive plate 12, be parallel with the tandem compound of multi-string LED chip.Planar structure LED chip 14 top electrodes adopt gold thread welding, and chip bottom is directly bonded on the second conductive plate 3 by high heat conductive insulating glue 5.
Structural design of the present invention, the sandwich structure that main employing conductive plate and high heat conductive insulating plate are spaced apart, conductive plate is directly as both positive and negative polarity, sectional area is large, current capacity has improved more than 10 times, several LED chips form high-power integrated packaging module by mode in parallel, serial or parallel connection-tandem compound, and a plurality of modules are combined into more high-power LED module, finally realize the exploitation of the high-efficiency high-power Uv and visible light LED light fixture product of high unit are package power.
Structural design of the present invention, mainly take that to reduce inner heat sink number be target, LED chip is directly bonded on conductive plate by modes such as high-heat-conductivity glues, and adopting the insulation board of high-termal conductivity as insulating barrier, the main derivation path of LED chip heat is: directly from chip bottom → high-heat-conductivity glue → the second conductive plate → high heat conductive insulating glue → the second heat conductive insulating plate.The less important derivation path of LED chip heat is: gold thread → the first conductive plate → high-heat-conductivity glue → the first heat conductive insulating plate → high-heat-conductivity glue → the second conductive plate → high-heat-conductivity glue → the second heat conductive insulating plate.This heat-conducting mode effectively reduces thermal resistivity, has improved the capacity of heat transmission.
Sandwich encapsulating structure of the present invention can adopt the mechanical systems such as screw to fix, and conductive plate has substituted printed circuit board (PCB), reduced the production process of thin film technique, complex process while making printed circuit board (PCB) with the contour heat conductive insulating plate of nitrogenize aluminium sheet, rate of finished products is low, current density is low problem have been solved, simplified manufacture craft, improve rate of finished products, reduced manufacturing cost.
Claims (8)
1. a high-power LED integrated packaging structure for high-efficiency heat conduction, is characterized in that: it comprises the first conductive plate, the first heat conductive insulating plate, second
Conductive plate, the second heat conductive insulating plate and some LED chips; Described the first conductive plate, the first heat conductive insulating plate, the second conductive plate and the second heat conductive insulating plate set gradually from top to bottom, are coated with high heat conductive insulating glue on the contact interface of upper and lower plates; The both positive and negative polarity that described the first conductive plate, the second conductive plate connect as circuit separately or respectively; Described some LED chip adhesions are arranged on adhesion setting on the second conductive plate, and the both positive and negative polarity being connected with circuit is connected.
2. the high-power LED integrated packaging structure of high-efficiency heat conduction according to claim 1, is characterized in that: described the first conductive plate comprises left and right two boards, is respectively positive conductive plate and negative conductive plate, is used separately as the both positive and negative polarity that circuit connects; Described the first heat conductive insulating plate is also divided into left and right two boards, its size shape adapts with positive conductive plate, negative conductive plate respectively, described some LED chips are placed between positive conductive plate and negative conductive plate, and the electrode of LED chip is connected with positive conductive plate, negative conductive plate respectively by gold thread.
3. the high-power LED integrated packaging structure of high-efficiency heat conduction according to claim 1, it is characterized in that: on described the first conductive plate and the first insulation board, some openings are set, some LED chips are placed in opening, and the electrode of LED chip is connected with first, second conductive plate respectively.
4. according to the high-power LED integrated packaging structure of the high-efficiency heat conduction described in claim 1 or 2 or 3, it is characterized in that: described some LED chips are planar structure or vertical stratification, or the mixing of planar structure and vertical stratification.
5. the high-power LED integrated packaging structure of high-efficiency heat conduction according to claim 1, is characterized in that: described the first conductive plate and the second conductive plate are sheet metal or the nonmetal plate for conducting electricity with high thermal conductivity coefficient; Described the first heat conductive insulating plate and the second heat conductive insulating plate are the sheet material that has thermal conductivity and insulating properties concurrently.
6. the high-power LED integrated packaging structure of high-efficiency heat conduction according to claim 5, is characterized in that: described sheet metal is aluminium sheet or copper coin; Described nonmetal plate is carborundum plate; Described the first heat conductive insulating plate and the second heat conductive insulating plate are nitrogenize aluminium sheet.
7. the high-power LED integrated packaging structure of high-efficiency heat conduction according to claim 1, it is characterized in that: when on described the second conductive plate, adhesion arranges some LED chips, chip egative film is directly bonded on the second conductive plate by high heat conduction viscose glue, scolder or eutectic bonding technology.
8. the high-power LED integrated packaging structure of high-efficiency heat conduction according to claim 7, it is characterized in that: described high heat conductive insulating glue adopts aluminium nitride or beryllium nitride high heat conductive insulating powder mixing adhesives to make, and conductive coefficient is more than 120 W/ (mK); Described high heat-conductivity conducting glue adopts elargol or silver-plated copper glue material to make, and conductive coefficient is more than 120 W/ (mK).
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| CN201410176671.3A CN103956356A (en) | 2014-04-29 | 2014-04-29 | Efficient heat conducting large-power LED integration package structure |
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| CN201410176671.3A CN103956356A (en) | 2014-04-29 | 2014-04-29 | Efficient heat conducting large-power LED integration package structure |
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| CN107148705A (en) * | 2014-10-22 | 2017-09-08 | 三菱电机株式会社 | Laser light-source device |
| CN108518605A (en) * | 2016-12-14 | 2018-09-11 | 深圳市中科燧承科技有限公司 | Side entering type LED light source and manufacturing method for display |
| CN112856281A (en) * | 2021-01-18 | 2021-05-28 | 江西铭强新材料科技有限公司 | Composite aluminum substrate for searchlight |
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Application publication date: 20140730 |