CN103247742A - LED heat radiation substrate and manufacturing method thereof - Google Patents
LED heat radiation substrate and manufacturing method thereof Download PDFInfo
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- CN103247742A CN103247742A CN2013101400416A CN201310140041A CN103247742A CN 103247742 A CN103247742 A CN 103247742A CN 2013101400416 A CN2013101400416 A CN 2013101400416A CN 201310140041 A CN201310140041 A CN 201310140041A CN 103247742 A CN103247742 A CN 103247742A
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- chip
- diamond
- led
- main body
- groove
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention provides an LED heat radiation substrate and a manufacturing method thereof. The LED heat radiation substrate is characterized by comprising a substrate main body made of diamond-copper alloy material, wherein a groove is formed in the substrate main body; a diamond chip is inlaid in the groove; and electrode wire areas and a chip connecting layer used for being connected with an LED chip are arranged on the upper surface of the diamond chip. According to the invention, as the structure that the diamond chip and the substrate main body made of the diamond-copper alloy material are combined to form the LED heat radiation substrate is adopted, the problem of heat radiation bottleneck of the current LED radiator due to introduction of an insulation layer is effectively solved; the diamond chip is closely inlaid in the groove formed in the substrate main body, so that the contact area of the diamond chip with the substrate main body is increased, and heat conducted to the diamond chip from the LED chip can be quickly conducted out; and meanwhile, the diamond chip and the substrate main body, and the LED chip and the diamond chip are respectively connected into a whole in a brazing manner, so that a dense alloy interface can be obtained, and thermal conductivity of the interface is high.
Description
Technical field
The invention belongs to the heat sink technical field of LED, specifically relate to a kind of LED heat-radiating substrate and manufacture method thereof of high heat conduction.
Background technology
The LED full name is semiconductor light-emitting-diode, can directly electric energy be converted into luminous energy.Be characterized in characteristics such as low in energy consumption, high brightness, beautiful in colour, anti-vibration, life-span length, cold light source.The LED product is widely used, and along with the increasing substantially of luminous efficiency and power, is that the various products of light source have been deep into all trades and professions with LED especially.
Semiconductor device is very responsive to temperature usually, and especially for great power LED, the temperature of P-N knot rises very obvious, and many application need a plurality of great power LED dense matrixs are arranged use, and its heat dissipation problem is especially obvious.Long-time heating or too high temperature can have a strong impact on efficient, stability and the useful life of device, and heat dissipation problem is to hinder high-power LED illumination to use a technical barrier of popularizing rapidly.
What influence LED heat radiation most critical is that can the heat of chip pass to rapidly on the metal heat sink of being made by copper or aluminium and do not have a problem of heat dissipation channel bottleneck.The encapsulation of traditional power LED generally be with chip be installed in heat sink on, heat sink being bonded in again on the insulating sealed layer, insulating sealed layer is bonded on the radiator by thermal interfacial material.The tack coat of this traditional structure, the thermal conductivity of insulating sealed layer are all very low, are the major parts that hinders chip cooling; In addition, heat sink (common metal Cu, Al, Al of chip
2O
3Or AlN etc.) and the radiating effect of radiator material (Cu commonly used or Al etc.) also remain further to be improved.
The patent No. is that the Chinese patent of ZL200810051719.2 discloses a kind of led chip pedestal and manufacture method with diamond film as heat sink material, is at Al
2O
3Or grow on the AlN base of ceramic or the last diamond film of welding, (thermal conductivity 1300～2000W/mk) is accelerated the heat of LED device to pass to utilize the very high rate of heat dissipation of diamond film.Yet, still relate to the poor slightly Al of heat dispersion in this scheme
2O
3((thermal conductivity 170～230W/mk) has reduced radiating effect to pottery for thermal conductivity 18～20W/mk) or AlN pottery.
Summary of the invention
The objective of the invention is at above-mentioned existing problems and deficiency, a kind of have high heat conductance and low interface thermal resistance are provided, the heat that can rapidly led chip be produced distributes, and simple and reliable for structure, easily manufactured LED heat-radiating substrate and manufacture method thereof.
Technical scheme of the present invention is achieved in that
LED heat-radiating substrate of the present invention, be characterized in comprising the base main body of being made by the diamond-copper alloy material, offer groove on the described base main body, be inlaid with the diamond chip that connects as one with the mode of base main body by soldering in the described groove, the upper surface of described diamond chip is provided with electrode cable district and the chip articulamentum that is used for being connected led chip, and described chip articulamentum and led chip connect as one by the mode of soldering.
The manufacture method of LED heat-radiating substrate of the present invention is characterized in comprising the steps.
A, the base main body of making at the diamond-copper alloy material are offered groove.
B, in groove, brush solder layer A, and the groove that is brushed with solder layer A can closely be contacted with the diamond chip of preparing to put into this groove.
C, plate metal film at the outer surface of diamond chip.
D, the diamond chip of metal-plated membrane is mounted in the groove that is brushed with solder layer A forms cooling plate structure with base main body.
E, brush solder layer B in the position that the metal film of diamond chip upper surface is used for the applying led chip.
F, align led chip and solder layer B bonding.
G, the cooling plate structure that will post led chip are put into soldering oven and are carried out heating soldering.
H, the metal film of the diamond chip upper surface on the cooling plate structure that welds is removed unnecessary part by photoetching technique, form electrode cable district and chip articulamentum, thereby finish the manufacturing of LED heat-radiating substrate.
Wherein, above-mentioned solder layer A and solder layer B are AgSn or AuSn or AgAuSn solder layer, and thickness is 10 μ m～50 μ m.
Above-mentioned metal film is Au-Ti or Au-Cr or Ag-Ti or Ag-Cr double-level-metal film, adopts the method for vacuum plating to make, and the gross thickness of described double-level-metal film is 1 μ m～10 μ m.
The present invention is owing to adopted the base main body that diamond chip and diamond-copper alloy material are made to be combined into the structure of LED heat-radiating substrate, greatly improve the thermal conductivity of LED heat-radiating substrate, its thermal conductivity is 1-3 times of fine copper, and adopt diamond chip as led chip directly contact heat sink, diamond chip is the highest material of nature thermal conductivity, be again good insulating body simultaneously, thereby avoided existing LED radiator because introducing the insulating barrier problem, the problem includes: the problem of heat radiation bottleneck effectively, and offer groove in base main body, diamond chip closely is embedded in structural design in the groove, increased the contact area of diamond chip and base main body widely, so just, the heat that led chip can be passed on the diamond chip conducts rapidly, thereby greatly improve the radiating efficiency of led chip, adopted metal film to make diamond chip and base main body as articulamentum and the mode by soldering simultaneously, led chip and diamond chip connect as one, thereby can obtain fine and close alloy interface, reduced interface resistance effectively, interface thermal conductivity height.The present invention has removed high insulating barrier or the tack coat of thermal resistance, and there is not the low material of thermal conductivity in the whole LED heat-radiating substrate, and the linkage interface thermal resistance is little, does not have the problem of the bottleneck that dispels the heat.Because the thermal conductivity height of the LED heat-radiating substrate of made of the present invention, therefore can effectively improve saturation current and the luminous efficiency of product, simultaneously can improve reliability of products and life-span, be specially adapted to the heat radiation of electronic devices such as great power LED or cooling integrated plate.
The present invention is further illustrated below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 only is provided with the cross-sectional view of a led chip for the present invention.
Fig. 2 is provided with the cross-sectional view of a plurality of led chips for the present invention.
Fig. 3 is provided with the vertical view of a plurality of led chips for the present invention.
Embodiment
As shown in Figure 1-Figure 3, LED heat-radiating substrate of the present invention, comprise the base main body of being made by the diamond-copper alloy material 1, offer groove 11 in base main body 1, in groove 11, be inlaid with the diamond chip 4 that connects as one with the mode of base main body 1 by soldering, upper surface at diamond chip 4 is provided with electrode cable district 5 and the chip articulamentum 6 that is used for being connected led chip 8, and described chip articulamentum 6 connects as one with the mode of led chip 8 by soldering.As shown in Figure 1, led chip 8 can only be provided with one; As shown in Figures 2 and 3, led chip 8 can be provided with a plurality of, and arranging of each led chip 8 can be adjusted according to actual needs with connected mode; And be electrically connected by contact conductor 9 between each led chip 8 and the electrode cable district 5.
The manufacture method of LED heat-radiating substrate of the present invention comprises the steps:
At first, the base main body of making at the diamond-copper alloy material 1 is offered groove 11.
Then, brush solder layer A2 in groove 11, this solder layer A2 is AgSn or AuSn or AgAuSn solder layer, and thickness is 10 μ m～50 μ m, and the groove 11 that is brushed with solder layer A2 can closely be contacted with the diamond chip 4 that this groove 11 is put in preparation.
Then, plate metal film 3 at the outer surface of diamond chip 4, this metal film 3 is Au-Ti or Au-Cr or Ag-Ti or Ag-Cr double-level-metal film, adopts the method for vacuum plating to make, and the gross thickness of described double-level-metal film is 1 μ m～10 μ m.
Then, the diamond chip 4 of metal-plated membrane 3 is mounted in the groove 11 that is brushed with solder layer A2 and forms cooling plate structure with base main body 1.
Then, the position that is used for applying led chip 8 at the metal film 3 of diamond chip 4 upper surfaces brushes solder layer B7, and this solder layer B7 is AgSn or AuSn or AgAuSn solder layer, and thickness is 10 μ m～50 μ m.
Then, align bonding with solder layer B7 led chip 8.
Then, the cooling plate structure that posts led chip 8 is put into soldering oven and carry out heating soldering.
At last, the metal film 3 of diamond chip 4 upper surfaces on the cooling plate structure that welds is removed unnecessary part by photoetching technique, form electrode cable district 5 and chip articulamentum 6, thereby finish the manufacturing of LED heat-radiating substrate.
In addition, after the LED heat-radiating substrate is made, led chip 8 can be electrically connected by contact conductor 9 with electrode cable district 5.
The present invention describes by embodiment, but the present invention is not construed as limiting, with reference to description of the invention, other variations of the disclosed embodiments, expect easily that as the professional person for this area such variation should belong within the claim restricted portion of the present invention.
Claims (4)
1. LED heat-radiating substrate, it is characterized in that comprising the base main body of being made by the diamond-copper alloy material (1), offer groove (11) on the described base main body (1), be inlaid with the diamond chip (4) that connects as one with the mode of base main body (1) by soldering in the described groove (11), the upper surface of described diamond chip (4) is provided with electrode cable district (5) and the chip articulamentum (6) that is used for being connected led chip (8), and described chip articulamentum (6) connects as one with the mode of led chip (8) by soldering.
2. the manufacture method of a LED heat-radiating substrate, this method is characterized in that comprising the steps: for the manufacture of LED heat-radiating substrate as described in above-mentioned claim 1
A, the base main body of making at the diamond-copper alloy material (1) are offered groove (11).
B, in groove (11), brush solder layer A(2), and make be brushed with solder layer A(2) groove (11) can closely contact with the diamond chip (4) that this groove (11) are put in preparation.
C, plate metal film (3) at the outer surface of diamond chip (4).
D, the diamond chip (4) of metal-plated membrane (3) is mounted to be brushed with solder layer A(2) groove (11) in form cooling plate structure with base main body (1).
E, brush solder layer B(7 in the position that the metal film (3) of diamond chip (4) upper surface is used for applying led chip (8));
F, with led chip (8) and solder layer B(7) align bonding.
G, the cooling plate structure that will post led chip (8) are put into soldering oven and are carried out heating soldering.
H, the metal film (3) of the diamond chip on the cooling plate structure that welds (4) upper surface is removed unnecessary part by photoetching technique, form electrode cable district (5) and chip articulamentum (6), thereby finish the manufacturing of LED heat-radiating substrate.
3. according to the manufacture method of the described LED heat-radiating substrate of claim 2, it is characterized in that above-mentioned solder layer A(2) and solder layer B(7) being AgSn or AuSn or AgAuSn solder layer, thickness is 10 μ m～50 μ m.
4. according to the manufacture method of the described LED heat-radiating substrate of claim 2, it is characterized in that above-mentioned metal film (3) is Au-Ti or Au-Cr or Ag-Ti or Ag-Cr double-level-metal film, adopt the method for vacuum plating to make, the gross thickness of described double-level-metal film is 1 μ m～10 μ m.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310140041.6A CN103247742B (en) | 2013-04-22 | 2013-04-22 | A kind of LED heat radiation substrate and manufacture method thereof |
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| CN201310140041.6A CN103247742B (en) | 2013-04-22 | 2013-04-22 | A kind of LED heat radiation substrate and manufacture method thereof |
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| CN103247742A true CN103247742A (en) | 2013-08-14 |
| CN103247742B CN103247742B (en) | 2015-12-09 |
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Cited By (3)
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| CN106163732A (en) * | 2014-04-02 | 2016-11-23 | 千住金属工业株式会社 | LED solder alloy and LED component |
| CN109863611A (en) * | 2016-10-25 | 2019-06-07 | 京瓷株式会社 | Substrate for mounting light-emitting element, light emitting device and light emitting module |
| CN112234037A (en) * | 2020-09-17 | 2021-01-15 | 中国电子科技集团公司第五十五研究所 | Embedded diamond silicon-based micro-fluid heat dissipation adapter plate and preparation method thereof |
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| CN112234037A (en) * | 2020-09-17 | 2021-01-15 | 中国电子科技集团公司第五十五研究所 | Embedded diamond silicon-based micro-fluid heat dissipation adapter plate and preparation method thereof |
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| Publication number | Publication date |
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| CN103247742B (en) | 2015-12-09 |
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Effective date of registration: 20171214 Address after: 510651 Changxin Road, Guangzhou, Guangdong, No. 363, No. Patentee after: NEW MATERIALS RESEARCH INSTITUTE OF GUANGDONG PROVINCE Address before: 510651 Changxin Road, Guangzhou, Guangdong, No. 363, No. Patentee before: Guangzhou Research Institute of Non-ferrous Metals |
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| CP01 | Change in the name or title of a patent holder |
Address after: 510651 Changxin Road, Guangzhou, Guangdong, No. 363, No. Patentee after: Institute of new materials, Guangdong Academy of Sciences Address before: 510651 Changxin Road, Guangzhou, Guangdong, No. 363, No. Patentee before: GUANGDONG INSTITUTE OF NEW MATERIALS |