CN107146788A - A kind of high-power deep ultraviolet LED/light source module and preparation method thereof - Google Patents
A kind of high-power deep ultraviolet LED/light source module and preparation method thereof Download PDFInfo
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- CN107146788A CN107146788A CN201710365588.4A CN201710365588A CN107146788A CN 107146788 A CN107146788 A CN 107146788A CN 201710365588 A CN201710365588 A CN 201710365588A CN 107146788 A CN107146788 A CN 107146788A
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- deep ultraviolet
- ultraviolet led
- light source
- source module
- ceramic substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Abstract
The invention discloses a kind of high-power deep ultraviolet LED/light source module, including semicircle quartz lens (3), deep ultraviolet LED chip (4), sealant (5), cover copper ceramic substrate (2) and hexagonal copper base (1)；The surface of the hexagonal copper base (1) is provided with gold-plated welding position；The copper ceramic substrate (2) that covers is welded on the gold-plated welding position；The deep ultraviolet LED chip (4) is square or rectangular inverted structure, and its back surfaces is provided with golden tin layers, for carrying out eutectic welding with the copper ceramic substrate (2) that covers；The semicircle quartz lens (3) is bonded in the surface of the deep ultraviolet LED chip (4) by the sealant (5).The invention also discloses a kind of preparation method of high-power deep ultraviolet LED/light source module.The light source module of the present invention, substantially increases the luminous power of product, reduces thermal resistance, controls junction temperature, increase life-span and reliability, and preparation technology is simple, easily holds operation, may be adapted to batch production.
Description
Technical field
The invention belongs to the sterilization of deep ultraviolet light source and curing technology field, more particularly, to a kind of high-power deep ultraviolet
LED/light source module and preparation method thereof.
Background technology
Ultraviolet LED based on group III nitride material sterilizing, glue curing, biochemical detection, non line of sight communication and
The fields such as special lighting have broad application prospects, and receive more and more attention and pay attention in recent years.More than past ten
Nian Li, the ultraviolet LED that ultraviolet LED is achieved between significant progress, 400~210nm of emission wavelength is successively developed, short
Only surpass 10% in 360nm deep ultraviolet LED external quantum efficiency (EQE) best result, compared with ripe blue-light LED chip also
Differ greatly.
At present, traditional mercury lamp is main in occupation of deep ultraviolet sterilization and curing light source field, and the mercury element in mercury lamp is to ring
Border is simultaneously unfriendly, and has that preheating time is long, and the shortcomings of wave band is not single is not preferable deep ultraviolet light source.By extension material
Material growth limitation, the deep ultraviolet LED photovoltaic transformation efficiency of 280nm wave bands is less than 5%, have that luminous quantity is not enough, heating is serious,
The problems such as light decay is too fast, has had a strong impact on deep ultraviolet LED popularization and application, does not meet the theory for building Green China instantly.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, the present invention provides a kind of high-power deep ultraviolet LED/light source mould
Group and preparation method thereof, its object is to combine multilayer copper-clad aluminium nitride substrate and uvioresistant sealant, can greatly improve production
The luminous power of product, reduces thermal resistance, controls junction temperature, increase life-span and reliability.
To achieve the above object, according to one aspect of the present invention there is provided a kind of high-power deep ultraviolet LED/light source module,
Including semicircle quartz lens, deep ultraviolet LED chip, sealant, cover copper ceramic substrate and hexagonal copper base；
Wherein, the hexagonal copper base is the thermoelectricity isolating construction with high heat conduction characteristic and high mechanical properties, for fitting
Answer high-power packaging environment；The surface of the hexagonal copper base is provided with gold-plated welding position；It is described cover copper ceramic substrate be welded on it is described
On gold-plated welding position；The quantity for covering copper ceramic substrate is many, and the surface that copper ceramic substrate is covered described in each is coated with gold
Tin layers, for eutectic welding；
The deep ultraviolet LED chip is square or rectangular inverted structure, and its back surfaces is provided with golden tin layers, for
The copper ceramic substrate that covers carries out eutectic welding；The semicircle quartz lens is bonded in the deep ultraviolet by the sealant
The surface of LED chip, forms waterproof oxygen sealing structure.
Further, it is described to cover the multilayer co-firing aluminium nitride ceramic material that copper ceramic substrate is low thermal resistance high intensity, its surface
Provided with golden tin layers, the height of the golden tin layers is 80~120um, and its surface roughness root mean square is less than 400nm.
Further, transmitance of the semicircle quartz lens (3) in 220nm-310nm deep ultraviolet bands be 95%~
99%.
Further, the quantity for covering copper ceramic substrate is four.
Further, the surface of the hexagonal copper base is additionally provided with gold-plated electrode, for connecting extraneous positive and negative polarity wire.
Further, the sealant is high ultraviolet permeability silica gel or full-inorganic fluorine glue.
According to another aspect of the present invention there is provided a kind of preparation method of high-power deep ultraviolet LED/light source module, it is special
Levy and be, specifically include following steps：
(1) ultrasound such as carry out to covering copper ceramic substrate to involve Ion Cleaning and dry；
(2) deep ultraviolet LED chip is encapsulated on the gold-plated electrode for covering copper ceramic substrate, and protected in nitrogen and hydrogen mixture
Room temperature is cooled under atmosphere；
(3) print solder paste on the copper-based plate surface welding position of hexagonal；
(4) the deep ultraviolet LED lamp bead that step (2) is made, which is placed on, covers on copper ceramic substrate welding position, and uses reflow ovens
Reflow soldering is carried out, ultrasonic wave cleaning and drying are carried out after the completion of backflow；
(5) sealant is subjected to deaeration processing in advance；
(6) sealant is uniformly applied to LED chip surface and surrounding, glue is highly difficult to exceed chip height two
Times；
(7) semicircle quartz lens is placed on sealant, semicircle quartz lens center is aligned with chip center, adjusts position
Put；
(8) above-mentioned manufactured goods are placed in vacuum defoamation case, vacuum defoamation；
(9) check in sealant whether also have gas bubbles left after deaeration, if not having, toast sealant；If still having bubble residual
Stay, repeat step (8)；
(10) circuit, test, you can prepare the deep ultraviolet LED/light source module are connected.
Further, tin cream thickness described in step (3) is between 100-150 μm.
Further, baking time described in step (9) is 60 minutes, and temperature is 60 DEG C.
In general, by the contemplated above technical scheme of the present invention compared with prior art, it can obtain down and show
Beneficial effect：
(1) deep ultraviolet LED/light source module of the invention, is sealed by combining multilayer copper-clad aluminium nitride substrate and uvioresistant
Agent, substantially increases the luminous power of product, reduces thermal resistance, controls junction temperature, increase life-span and reliability.
(2) deep ultraviolet LED/light source module of the invention, light extraction efficiency is improved using uvioresistant sealant, increases photoelectricity
Transformation efficiency, realizes the application and industrialization of high-power highlight extract efficiency ultraviolet sterilizing light source, in addition, being sealed using uvioresistant
Agent can avoid the harmful effect that sealant aging is brought.
(3) preparation method of deep ultraviolet LED/light source module of the invention, preparation technology is simple, easily holds operation, may be adapted to
Batch production, the deep ultraviolet LED/light source module electricity conversion of preparation is high, and reliable and stable, service life is long；And use
Equipment is conventional equipment, greatly reduces the preparation cost of deep ultraviolet LED/light source module, contributes to answering for ultraviolet sterilizing light source
With and industrialization.
Brief description of the drawings
Fig. 1 is a kind of high-power deep ultraviolet LED/light source module top view of the embodiment of the present invention；
Fig. 2 is a kind of front view of high-power deep ultraviolet LED/light source module of the embodiment of the present invention；
Fig. 3 is a kind of preparation method process flow diagram of high-power deep ultraviolet LED/light source module of the embodiment of the present invention.
In all accompanying drawings, same reference represents identical structure and part, wherein：1- hexagonal copper bases, 2- covers
Copper ceramic substrate, 3- semicircle quartz lens, 4- deep ultraviolet LED chips, 5- sealants, 6-SAC305 tin creams.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to explain the present invention, not
For limiting the present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below that
Not constituting conflict between this can just be mutually combined.
Fig. 1 is a kind of high-power deep ultraviolet LED/light source module top view of the embodiment of the present invention；Fig. 2 is the embodiment of the present invention
A kind of front view of high-power deep ultraviolet LED/light source module.As depicted in figs. 1 and 2, the light source module includes semicircle quartz lens
3rd, sealant 5, deep ultraviolet LED chip 4, cover copper ceramic substrate 2, hexagonal copper base 1.
As shown in figure 1, the hexagonal copper base 1 is located at bottom, its surface is designed with gold-plated electrode and 2 × 2 gold-plated welding positions,
Welding position uses series system, and hexagonal copper base 1 has high heat conduction characteristic and high mechanical properties, it is adaptable to high-power packaging environment.
Cover copper ceramic substrate 2 to make using the multilayer co-firing aluminium nitride ceramics of low thermal resistance high intensity, cover copper ceramic substrate just
Golden tin layers have been done in face, and highly preferred coating is 100 μm or 80um or 120um, and its surface roughness rms is small
In 400nm, copper ceramic substrate 2 is covered by the reflow soldering of SAC305 tin creams 6 on the gold-plated welding position of hexagonal copper base 1.
In invention preferred embodiment, cover copper ceramic substrate 2 and have four, each cover copper ceramic substrate 2 surface
Golden tin layers are coated with, for eutectic welding；
As shown in figure 1, deep ultraviolet LED chip 4 peak wavelength 280nm, dimensional structure 1mm × 1mm, are inverted structure, core
There are one layer 3 μm of golden tin layers on piece back electrode surface, for carrying out eutectic welding, deep ultraviolet LED with the copper ceramic substrate that covers
Chip 4 is encapsulated at the welding position for covering copper ceramic substrate 2 by eutectic welding；
The semicircle quartz lens of semicircle quartz lens 3, with high ultraviolet permeability, especially in deep ultraviolet band (220nm-
310nm) there is more than 95% transmitance.Semicircle quartz lens 3 is bonded in deep ultraviolet LED chip 4 by the sealant 5
Surface, forms the sealing of waterproof oxygen.
In a preferred embodiment of the invention, sealant 5 can use high ultraviolet permeability silica gel and full-inorganic fluorine glue etc.
A variety of colloids, can be used according to working environment selection.
The present invention covers copper ceramic substrate and advanced Sn/Au eutectic while packaging density is improved by using low thermal resistance
Flip chip technology, can effectively control deep ultraviolet LED chip junction temperature, improve luminous power and the life-span of deep ultraviolet LED chip, and using anti-
Ultraviolet sealant, the harmful effect that sealant aging can be avoided to bring.
Through actual test, in the environment of natural heat dissipation, during electric current 350mA, voltage 30V, optical power intensity can reach
Light decay is less than 10% every 500 hours under 60mW, and normal operation.Its structure fabrication processes flow is simple, it is adaptable to scale
Production, has boundless application prospect in fields such as deep ultraviolet germicidal light source, curing light sources.
Fig. 3 is a kind of preparation method process flow diagram of high-power deep ultraviolet LED/light source module of the embodiment of the present invention.
As shown in figure 3, the preparation method of the deep ultraviolet LED/light source module comprises the following steps：
(1) involve Ion Cleaning, scavenging period about 2 minutes to covering the ultrasounds such as the progress of copper ceramic substrate 2, and dry；
(2) full-automatic eutectic bonder is used, deep ultraviolet LED chip 4 is encapsulated in and covers copper by the method by heating pressurization
On the gold-plated electrode of ceramic substrate 2, and room temperature is cooled under the atmosphere that nitrogen and hydrogen mixture is protected；
(3) screen process press is used, SAC305 tin creams 7 are printed on the surface welding position of hexagonal copper base 1, tin cream thickness does not surpass
Cross 150 μm；
(4) the deep ultraviolet LED lamp bead that step 2 is made is placed on and covered on copper ceramic substrate welding position, and entered using reflow ovens
Row reflow soldering, carries out ultrasonic wave cleaning and drying after the completion of backflow；
(5) sealant 5 is subjected to deaeration beforehand through planetary vacuum degasing machine, sets 800 rpms of revolution, program
Time is 2 minutes；
(6) full-automatic glue-dropping machine is used, sealant 5 is uniformly applied to chip surface and surrounding, glue is highly difficult to surpass
Cross twice of chip height；
(7) semicircle quartz lens 3 is placed on sealant, the center of semicircle quartz lens 3 is aligned with chip center, adjusts position
Put；
(8) above-mentioned manufactured goods are placed in vacuum defoamation case, set pressure as 100 handkerchiefs, vacuum defoamation 10 minutes；
(9) check in sealant whether also have gas bubbles left after deaeration, if not having, toast sealant；Baking 60 minutes, if
Determine temperature 60 C；
(10) circuit, test, you can prepare the deep ultraviolet LED/light source module are connected.
The preparation method of deep ultraviolet LED/light source module of the invention, preparation technology is simple, easily holds operation, may be adapted to criticize
Amount production, the deep ultraviolet LED/light source module electricity conversion of preparation is high, and reliable and stable, service life is long；And use set
Standby is conventional equipment, greatly reduces the preparation cost of deep ultraviolet LED/light source module, contributes to the application of ultraviolet sterilizing light source
And industrialization.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not used to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (9)
1. a kind of high-power deep ultraviolet LED/light source module, it is characterised in that including semicircle quartz lens (3), deep ultraviolet LED core
Piece (4), sealant (5), cover copper ceramic substrate (2) and hexagonal copper base (1)；
Wherein, the hexagonal copper base (1) is the thermoelectricity isolating construction with high heat conduction characteristic and high mechanical properties, for adapting to
High-power packaging environment；The surface of the hexagonal copper base (1) is provided with gold-plated welding position；The copper ceramic substrate (2) that covers is welded on
On the gold-plated welding position；The quantity for covering copper ceramic substrate (2) is many, and the table of copper ceramic substrate (2) is covered described in each
Face is coated with golden tin layers, for eutectic welding；
The deep ultraviolet LED chip (4) is square or rectangular inverted structure, and its back surfaces is provided with golden tin layers, for
The copper ceramic substrate (2) that covers carries out eutectic welding；The semicircle quartz lens (3) is bonded in institute by the sealant (5)
The surface of deep ultraviolet LED chip (4) is stated, waterproof oxygen sealing structure is formed.
2. a kind of high-power deep ultraviolet LED/light source module according to claim 1, it is characterised in that described to cover copper ceramics
Substrate (2) is the multilayer co-firing aluminium nitride ceramic material of low thermal resistance high intensity, and its surface is provided with golden tin layers, the height of the golden tin layers
For 80~120um, its surface roughness root mean square is less than 400nm.
3. a kind of high-power deep ultraviolet LED/light source module according to claim 1 or 2, it is characterised in that half roundstone
Transmitance of the English lens (3) in 220nm-310nm deep ultraviolet bands is 95%~99%.
4. a kind of high-power deep ultraviolet LED/light source module according to any one of claim 1-3, it is characterised in that institute
State and cover the quantity of copper ceramic substrate (2) for four.
5. a kind of high-power deep ultraviolet LED/light source module according to any one of claim 1-4, it is characterised in that institute
The surface for stating hexagonal copper base (1) is additionally provided with gold-plated electrode, for connecting extraneous positive and negative polarity wire.
6. a kind of high-power deep ultraviolet LED/light source module according to any one of claim 1-5, it is characterised in that institute
Sealant (5) is stated for high ultraviolet permeability silica gel or full-inorganic fluorine glue.
7. a kind of preparation method of high-power deep ultraviolet LED/light source module, it is characterised in that specifically include following steps：
(1) ultrasound such as carry out to covering copper ceramic substrate to involve Ion Cleaning and dry；
(2) deep ultraviolet LED chip is encapsulated on the gold-plated electrode for covering copper ceramic substrate, and the atmosphere protected in nitrogen and hydrogen mixture
Under be cooled to room temperature；
(3) print solder paste on the copper-based plate surface welding position of hexagonal；
(4) the deep ultraviolet LED lamp bead that step (2) is made, which is placed on, covers on copper ceramic substrate welding position, and is carried out using reflow ovens
Reflow soldering, carries out ultrasonic wave cleaning and drying after the completion of backflow；
(5) sealant is subjected to deaeration processing in advance；
(6) sealant is uniformly applied to LED chip surface and surrounding, glue is highly difficult to exceed chip height twice；
(7) semicircle quartz lens is placed on sealant, semicircle quartz lens center is aligned with chip center, adjustment position；
(8) above-mentioned manufactured goods are placed in vacuum defoamation case, vacuum defoamation；
(9) check in sealant whether also have gas bubbles left after deaeration, if not having, toast sealant；If still there is gas bubbles left,
Repeat step (8)；
(10) circuit, test, so as to prepare the deep ultraviolet LED/light source module are connected.
8. a kind of preparation method of high-power deep ultraviolet LED/light source module according to claim 7, it is characterised in that step
Suddenly tin cream thickness described in (3) is between 100-150 μm.
9. a kind of preparation method of high-power deep ultraviolet LED/light source module according to claim 7 or 8, it is characterised in that
Baking time described in step (9) is 60 minutes, and temperature is 60 DEG C.
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| CN201710365588.4A CN107146788A (en) | 2017-05-22 | 2017-05-22 | A kind of high-power deep ultraviolet LED/light source module and preparation method thereof |
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| CN201710365588.4A CN107146788A (en) | 2017-05-22 | 2017-05-22 | A kind of high-power deep ultraviolet LED/light source module and preparation method thereof |
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Cited By (8)
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| CN107482001A (en) * | 2017-09-26 | 2017-12-15 | 深圳市立洋光电子股份有限公司 | A kind of super high power COB light source and its manufacture craft |
| CN107819447A (en) * | 2017-09-11 | 2018-03-20 | 上海亚明照明有限公司 | Line concentration type wave filter |
| CN108123022A (en) * | 2017-12-24 | 2018-06-05 | 深圳市泽海机电设备有限公司 | A kind of LED aflatoxins decomposes lamp |
| CN109192838A (en) * | 2018-08-15 | 2019-01-11 | 深圳优卫乐得科技有限公司 | A kind of ultraviolet LED light source module making method |
| CN111146324A (en) * | 2019-11-25 | 2020-05-12 | 华中科技大学鄂州工业技术研究院 | White light LED device with ultrahigh color rendering index |
| CN111883631A (en) * | 2020-08-21 | 2020-11-03 | 连云港光鼎电子有限公司 | Preparation method of UVC-LED light-emitting device |
| CN112467008A (en) * | 2020-11-13 | 2021-03-09 | 中山市聚明星电子有限公司 | Light-emitting device manufacturing method and light-emitting device |
| CN117805948A (en) * | 2024-03-01 | 2024-04-02 | 河南百合特种光学研究院有限公司 | High-temperature sintering method of quartz fly-eye lens |
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| CN111146324A (en) * | 2019-11-25 | 2020-05-12 | 华中科技大学鄂州工业技术研究院 | White light LED device with ultrahigh color rendering index |
| CN111883631A (en) * | 2020-08-21 | 2020-11-03 | 连云港光鼎电子有限公司 | Preparation method of UVC-LED light-emitting device |
| CN112467008A (en) * | 2020-11-13 | 2021-03-09 | 中山市聚明星电子有限公司 | Light-emitting device manufacturing method and light-emitting device |
| CN117805948A (en) * | 2024-03-01 | 2024-04-02 | 河南百合特种光学研究院有限公司 | High-temperature sintering method of quartz fly-eye lens |
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