CN205452355U - High -power flip -chip structure ultraviolet LED solidification light source - Google Patents
High -power flip -chip structure ultraviolet LED solidification light source Download PDFInfo
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- CN205452355U CN205452355U CN201620237035.1U CN201620237035U CN205452355U CN 205452355 U CN205452355 U CN 205452355U CN 201620237035 U CN201620237035 U CN 201620237035U CN 205452355 U CN205452355 U CN 205452355U
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- silica gel
- ultraviolet led
- curing light
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Abstract
The utility model provides a high -power flip -chip structure ultraviolet LED solidification light source, including 28 golden tin eutectic flip -chip UV the LED chip, cover that copper ceramic substrate, gilding electrode, annular box dam are gluey, the transparent silica gel of deaeration, semicolumn quartz lens, electrically conductive screw, heat conduction silicone grease, liquid cooling ware. The utility model discloses when improving packaging density, cover copper ceramic substrate and advance golden tin eutectic flip chip technology through adopting the low thermal resistance, but effective control UV LED chip junction temperature improves ultraviolet LED's luminous power, and adopts anti near ultraviolet silica gel, can avoid the ageing harmful effects that bring of silica gel. Through actual test, in liquid cooling's environment, during electric current 8800mA, voltage 26.1V, luminous power intensity can reach 74W, and the light decay is less than 10% per 1000 hours under the normal behavior. Process flow is simple in its structure preparation, is applicable to the large -scale production, has very wide application prospect in fields such as ultra -violet curing light sources.
Description
Technical field
This utility model relates to the fields such as ultra-violet curing light source, particularly to a kind of high-power inverted structure ultraviolet LED curing light source.
Background technology
At present, the outer LED(UltravioletLED of high-power purple based on AlGaN, it is called for short UV-LED), can be applicable to plate making, ink setting, medical science physical therapy, degradation, photochemical catalysis, fluorescence analysis, fluorescent penetrating inspection, glass without the solidification of shadow adhesive curing Mobile phone screen, UV glue curing, ink solidification etc..Wherein, peak wavelength is that the UV-LED of 395nm is believed to be widely used in ultra-violet curing field.Relative to conventional ultra-violet curing apparatus, use 30-40 times that service life is tradition mercury lamp of UV-LED system.But current high-power ultraviolet LED curing light source processing technology is immature, there is the problems such as caloric value is big, poor reliability, light decay are strong, hinder the extensive application of the ultraviolet LED curing light source of high optical power density, when can not meet the solidification of UV material, the demand of ultraviolet ray intensity, runs counter to the most existing environment protecting and power-saving idea.
In order to promote and promote the extensive application of ultraviolet LED curing light source, the utility model proposes a kind of high-power inverted structure ultraviolet LED curing light source.This high-power inverted structure ultraviolet LED curing light source and preparation method thereof is different from traditional ultraviolet LED curing light source and preparation method thereof, this utility model uses advanced upside-down mounting eutectic technology, in conjunction with multilayer copper-clad aluminium nitride substrate and uvioresistant silica gel, the luminous power of product can be greatly improved, reduce thermal resistance, control junction temperature, increase life-span and reliability.
Summary of the invention
For above-mentioned deficiency, technical problem to be solved in the utility model is how to reduce thermal resistance in high-power ultraviolet LED curing light source encapsulating structure, control junction temperature, improve light efficiency, also ensure that reliability and the life-span of product itself simultaneously, and a kind of high-power inverted structure ultraviolet LED curing light source is provided.
The technical solution of the utility model: a kind of high-power inverted structure ultraviolet LED curing light source, this curing light source includes upside-down mounting UV-LED chip, covers copper ceramic substrate, gold-plated electrode, annular box dam glue, deaeration transparent silica gel, semicolumn quartz lens, conduction screw, heat-conducting silicone grease, water-filled radiator；Described water-filled radiator is positioned at bottom, described heat-conducting silicone grease uniform application is covering copper ceramic substrate back, the described copper ceramic substrate that covers is fixed on air-cooled radiator upper surface by plastic screw, cover copper ceramic substrate front and do gold-plated electrode and conduction screw, described upside-down mounting UV-LED chip package is on the gold-plated electrode that highly dense line style is arranged, described annular box dam tempera painting is in UV-LED chip periphery surrounding, described deaeration transparent silica gel is uniformly coated on UV-LED chip surface and the surrounding of line style arrangement, described semicolumn quartz lens covers to be formed with deaeration transparent silica gel above annular box dam glue and coheres sealing.
At above-mentioned upside-down mounting UV-LED chip, peak wavelength 395nm, using four and seven string connected modes, package pitch is 1.5mm, flip-chip is being covered on copper ceramic substrate by Sn/Au eutectic technique.
Using the multilayer co-firing aluminium nitride ceramics of low thermal resistance high intensity to make at the above-mentioned copper ceramic substrate that covers, cover copper ceramic substrate front and done and cover copper wire, layers of copper height is 40 μm.
Covering at above-mentioned ceramic substrate and have one layer of Gold plated Layer in copper wire, its surface roughness rms is less than 400nm.
Electrical interconnection is formed by conduction screw and peripheral circuit, it is not necessary to welding circuit at the above-mentioned copper ceramic substrate that covers.
In above-mentioned use uvioresistant transparent silica gel, by planetary vacuum defoamation machine deaeration in advance.
In the above-mentioned flow distribution using annular box dam glue regulation and control deaeration transparent silica gel, enclose glue height 0.5mm, maintain an equal level with chip surface.
At the above-mentioned semicolumn quartz lens using high ultraviolet ray transmissivity.
A kind of high-power inverted structure ultraviolet LED curing light source, its concrete preparation process:
(1) plasma cleaning is carried out to covering copper ceramic substrate, scavenging period about 5 minutes, and dry；(2) full-automatic eutectic bonder is used, the method pressurizeed by heating, by UV-LED chip package on the gold-plated electrode that line style is arranged, and it is cooled to room temperature under the atmosphere of nitrogen protection；(3) using full-automatic glue-dropping machine, preset picture glue route, the chip periphery in line style arrangement is drawn annular and is enclosed glue, encloses glue surface and amasss slightly larger than semicolumn quartz lens cross section, encloses glue height and be set as 0.5mm；(4) baking；Toast 1 hour ± 10 minutes, design temperature 150 ± 10 DEG C, make annular box dam glue hardening；(5) transparent silica gel carries out deaeration beforehand through planetary vacuum defoamation machine, sets revolution 800 rpms, and program time is 2 minutes；(6) full-automatic glue-dropping machine is used, by deaeration transparent silica gel uniform application in chip surface and surrounding, glue height slightly above annular box dam glue height；(7) semicolumn quartz lens is placed on annular box dam glue, and coheres closely with deaeration transparent silica gel；(8) there is the copper ceramic substrate that covers of semicolumn quartz lens to be placed in vacuum defoamation case above-mentioned cohering, set pressure as 100 handkerchiefs, vacuum defoamation 10 minutes；(9) whether also having gas bubbles left in checking silica gel after deaeration, if not having, toasting silica gel；Toast 30 minutes, design temperature 150 DEG C；(10) cover copper ceramic substrate back uniform application heat-conducting silicone grease, be then fixed on the upper surface of water-filled radiator by plastic screw；(11) circuit is connected, test.
In above-mentioned one high-power inverted structure ultraviolet LED curing light source preparation method, it is characterized in that covering copper ceramic substrate forms electrical interconnection by conduction screw and peripheral circuit, it is not necessary to welding circuit.
In above-mentioned one high-power inverted structure ultraviolet LED curing light source preparation method, use uvioresistant transparent silica gel, by planetary vacuum defoamation machine deaeration in advance.
In above-mentioned one high-power inverted structure ultraviolet LED curing light source preparation method, use the flow distribution of annular box dam glue regulation and control deaeration transparent silica gel, enclose glue height 0.5mm, maintain an equal level with chip surface.
In the preparation method of above-mentioned a kind of high-power inverted structure ultraviolet LED curing light source, use the semicolumn quartz lens of high ultraviolet ray transmissivity.
This utility model compared with prior art, has following substantive distinguishing features and remarkable advantage: this utility model is rational in infrastructure, and manufacturing process is simple, is suitable to batch production.Use this utility model structure, the heat of PN junction in ultraviolet LED epitaxial layer can be delivered to rapidly in external heat sink, " extraction " that utilize silica gel improves light extraction efficiency simultaneously, increases electricity conversion, it is achieved the application of high-power highlight extract efficiency ultra-violet curing light source and industrialization.
Accompanying drawing explanation
Fig. 1 is schematic top plan view of the present utility model；
Fig. 2 is schematic side view of the present utility model；
In figure: 1-conducts electricity screw, and 2-covers copper ceramic substrate, 3-annular box dam glue, 4-deaeration transparent silica gel, 5-gold-plated electrode, 6-upside-down mounting UV-LED chip, 7-semicolumn quartz lens, 8-heat-conducting silicone grease, 9 water-filled radiators.
Detailed description of the invention
As it is shown in figure 1, upside-down mounting UV-LED chip 6 is by 28 × 1 array FC packaged type arrangements, the driving electric current of single UV-LED chip is 1000mA, as a example by wavelength 395nm.nullPlasma cleaning is carried out to covering copper ceramic substrate 2，Scavenging period about 5 minutes，And dry，Use full-automatic eutectic bonder，The method pressurizeed by heating，Upside-down mounting UV-LED chip 6 is encapsulated on the gold-plated electrode 5 of line style arrangement，And it is cooled to room temperature under the atmosphere of nitrogen protection，Use full-automatic glue-dropping machine，Preset picture glue route，Chip periphery in line style arrangement is drawn annular and is enclosed glue 3，Enclose glue surface long-pending slightly larger than semicolumn quartz lens 7 cross section，Enclose glue height and be set as 0.5mm，Toast about 1 hour，Design temperature 150 DEG C，Annular box dam glue 3 is made to harden，Transparent silica gel 4 carries out deaeration beforehand through planetary vacuum defoamation machine，Set revolution 800 rpms，Program time is 2 minutes，Use full-automatic glue-dropping machine，By deaeration transparent silica gel uniform application in upside-down mounting UV-LED chip 6 surface and surrounding，Glue height slightly above annular box dam glue 3 height，Semicolumn quartz lens 7 is placed on annular box dam glue 3，And cohere closely with deaeration transparent silica gel 4，The copper ceramic substrate that covers of semicolumn quartz lens is had to be placed in vacuum defoamation case above-mentioned cohering，Set pressure as 100 handkerchiefs，Vacuum defoamation 10 minutes，Whether gas bubbles left is also had in checking silica gel after deaeration，If no，Baking silica gel；Toast 30 minutes, design temperature 150 DEG C, covering copper ceramic substrate 2 back uniform application heat-conducting silicone grease 8, then by plastic screw, substrate is fixed on the upper surface of water-filled radiator 9, finally circuit is connected with conduction screw 1, tests.Driving electric current to be set to every chips 1000mA, now total optical power is about 45W, and optical power density is up to 20W/cm2。
Claims (8)
1. a high-power inverted structure ultraviolet LED curing light source, it is characterised in that: this curing light source includes upside-down mounting UV-LED chip, covers copper ceramic substrate, gold-plated electrode, annular box dam glue, deaeration transparent silica gel, semicolumn quartz lens, conduction screw, heat-conducting silicone grease, water-filled radiator；Described water-filled radiator is positioned at bottom, described heat-conducting silicone grease uniform application is covering copper ceramic substrate back, the described copper ceramic substrate that covers is fixed on air-cooled radiator upper surface by plastic screw, cover copper ceramic substrate front and do gold-plated electrode and conduction screw, described upside-down mounting UV-LED chip package is on the gold-plated electrode that highly dense line style is arranged, described annular box dam tempera painting is in UV-LED chip periphery surrounding, described deaeration transparent silica gel is uniformly coated on UV-LED chip surface and the surrounding of line style arrangement, described semicolumn quartz lens covers to be formed with deaeration transparent silica gel above annular box dam glue and coheres sealing.
High-power inverted structure ultraviolet LED curing light source the most according to claim 1, it is characterized in that: upside-down mounting UV-LED chip, peak wavelength 395nm, use four and seven string connected modes, package pitch is 1.5mm, flip-chip is being covered on copper ceramic substrate by Sn/Au eutectic technique.
High-power inverted structure ultraviolet LED curing light source the most according to claim 2, it is characterized in that: cover copper ceramic substrate and use the multilayer co-firing aluminium nitride ceramics of low thermal resistance high intensity to make, covering copper ceramic substrate front to have done and cover copper wire, layers of copper height is 40 μm.
High-power inverted structure ultraviolet LED curing light source the most according to claim 3, it is characterised in that: ceramic substrate covers one layer of Gold plated Layer in copper wire, its surface roughness rms is less than 400nm.
High-power inverted structure ultraviolet LED curing light source the most according to claim 1, it is characterised in that: cover copper ceramic substrate and form electrical interconnection by conduction screw and peripheral circuit, it is not necessary to welding circuit.
High-power inverted structure ultraviolet LED curing light source the most according to claim 1, it is characterised in that: use uvioresistant transparent silica gel, by planetary vacuum defoamation machine deaeration in advance.
High-power inverted structure ultraviolet LED curing light source the most according to claim 1, it is characterised in that: use the flow distribution of annular box dam glue regulation and control deaeration transparent silica gel, enclose glue height 0.5mm, maintain an equal level with chip surface.
High-power inverted structure ultraviolet LED curing light source the most according to claim 1, it is characterised in that: use the semicolumn quartz lens of high ultraviolet ray transmissivity.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620237035.1U CN205452355U (en) | 2016-03-25 | 2016-03-25 | High -power flip -chip structure ultraviolet LED solidification light source |
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| CN201620237035.1U CN205452355U (en) | 2016-03-25 | 2016-03-25 | High -power flip -chip structure ultraviolet LED solidification light source |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845817A (en) * | 2016-03-25 | 2016-08-10 | 武汉优炜星科技有限公司 | Large-power inverted-structure ultraviolet LED curing light source and preparation method thereof |
| CN106981561A (en) * | 2017-03-02 | 2017-07-25 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | Ultraviolet LED light source and preparation method thereof |
| CN109920740A (en) * | 2019-03-13 | 2019-06-21 | 河源创基电子科技有限公司 | A kind of encapsulation preparation method of chip diode |
| CN113904527A (en) * | 2021-09-15 | 2022-01-07 | 江苏德耐美克电气有限公司 | Water-cooled high-voltage shore power supply power unit and assembling and cooling method thereof |
-
2016
- 2016-03-25 CN CN201620237035.1U patent/CN205452355U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845817A (en) * | 2016-03-25 | 2016-08-10 | 武汉优炜星科技有限公司 | Large-power inverted-structure ultraviolet LED curing light source and preparation method thereof |
| CN106981561A (en) * | 2017-03-02 | 2017-07-25 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | Ultraviolet LED light source and preparation method thereof |
| CN109920740A (en) * | 2019-03-13 | 2019-06-21 | 河源创基电子科技有限公司 | A kind of encapsulation preparation method of chip diode |
| CN113904527A (en) * | 2021-09-15 | 2022-01-07 | 江苏德耐美克电气有限公司 | Water-cooled high-voltage shore power supply power unit and assembling and cooling method thereof |
| CN113904527B (en) * | 2021-09-15 | 2024-01-09 | 江苏德耐美克电气有限公司 | Water-cooled high-voltage shore power supply power unit and assembling and cooling method thereof |
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