CN102903710A - High-light-power-density ultraviolet ray LED (Light-emitting Diode) curing light source and preparation method thereof - Google Patents
High-light-power-density ultraviolet ray LED (Light-emitting Diode) curing light source and preparation method thereof Download PDFInfo
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- CN102903710A CN102903710A CN201210427524XA CN201210427524A CN102903710A CN 102903710 A CN102903710 A CN 102903710A CN 201210427524X A CN201210427524X A CN 201210427524XA CN 201210427524 A CN201210427524 A CN 201210427524A CN 102903710 A CN102903710 A CN 102903710A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H—ELECTRICITY
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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Abstract
The invention relates to a high-light-power-density ultraviolet ray LED (Light-emitting Diode) curing light source and a preparation method thereof. The light source comprises a heat radiator, an LED substrate, elargol, ultraviolet LED chips, a golden wire, silica gel, a transparent quartz glass cover plate and a gel stopping frame, wherein the ultraviolet LED chips are fixed on a crystal fixing face through the elargol, the LED substrate is fixed on a fixing face of the heat radiator and is provided with a reflecting cup, a gold striking bonding pad and a routing layer, the ultraviolet LED chips are connected with the gold striking bonding pad, the golden wire and the routing layer on the LED substrate to form an ultraviolet LED chip string, the gel stopping frame is fixed on the LED substrate, a silica gel coating layer is filled in the gel stopping frame, and the quartz glass cover plate is fixed on the gel stopping frame. According to the invention, light attenuation caused by adverse heat radiation of the light source is eliminated, the high-density array type integrated ultraviolet LED chips can be realized, and the high-light-power-density ultraviolet LED area light source or line light source is manufactured. The high-light-power-density ultraviolet ray LED curing light source is simple in structure and low in manufacture cost, and has a very wide application prospect in the industrial fields of curing, disinfection and the like.
Description
Technical field
The present invention relates to ultraviolet LED curing light source field, be specially a kind of high optical power density ultraviolet ray LED curing light source and preparation method thereof.
Background technology
At present, the curing light source for UV curing (abbreviation of Ultraviolet Rays, Chinese implication is ultraviolet light) printing ink, UV glue, UV ink etc. has mercury lamp, microwave non-electrode ultraviolet source, Halogen lamp LED etc.Along with the extensive use in industrial production of UV curing technology, traditional ultra-violet curing light source exposed day by day goes out some shortcomings.Ultraviolet ray LED curing light source is as the curing light source of new generation of green energy-conserving and environment-protective, has a life-span long, do not contain infrared ray, without series of advantages such as mercury pollution, has extremely wide development and application space at China's industrial circle.But present high optical power density ultraviolet ray LED curing light source manufacture method is immature, there is the heat dissipation technology bottleneck, can't resolve the heat dissipation problem of the ultraviolet LED curing light source of high optical power density, the ultraviolet LED curing light source product that only has in actual applications a small amount of low optical power density, the demand of ultraviolet ray intensity when not satisfying various UV material cured, hindered environmental protection, the commercial application of the ultraviolet LED curing light source of low energy consumption.
In order to promote and promote the commercial application of ultraviolet LED curing light source, the present invention proposes a kind of high optical power density ultraviolet ray LED curing light source and preparation method thereof, this high optical power density ultraviolet ray LED curing light source and preparation method thereof is different from traditional ultraviolet LED curing light source and preparation method thereof, can realize low cost, high optical power density and can effectively solve the heat dissipation technology bottleneck.
Summary of the invention
The objective of the invention is to be the heat radiation defective that exists for existing ultraviolet LED curing light source and manufacture method by the improvement on encapsulating structure and packaging technology, provides a kind of high optical power density ultraviolet ray LED curing light source and preparation method thereof.Realize application and the industrialization of high optical power density ultraviolet LED curing light source, for achieving the above object, design of the present invention is:
With directly ultraviolet LED chip die bond on the die bond of radiator surface, the die bond surface of radiator place with reflector, above be furnished with line layer and beat brilliant pad the solution of LED substrate optically focused, circuit trace, beat gold thread.Because the direct die bond of ultraviolet LED chip is on the surface of radiator, ultraviolet LED chip die bond is fitted in spreader surface with heat-conducting cream compares behind the LED substrate with traditional, effectively reduced intermediate thermal conductivity link, interface resistance, obviously improved radiating efficiency.PN junction is in low-temperature condition when having guaranteed the ultraviolet LED chip operation by above-mentioned radiating mode, the infrared radiation problem that ultraviolet LED chip self excess Temperature produces when having solved because of work, realize ultraviolet LED " cold " curing light source, be the method for the high optical power density ultraviolet LED of a kind of low cost and simple realization curing light source, this preparation method has realized the application problem of high luminous power ultraviolet ray LED curing light source.In addition, on this basis, can also obtain easily the ultraviolet LED curing light source of different size by being connected in series ultraviolet led light source module, solve the light source problem of different application domain requirement different size.
According to the foregoing invention design, reach by following technical solution goal of the invention:
It comprises heat radiation a kind of high optical power density ultraviolet LED curing light source, the LED substrate, elargol, the ultraviolet LED chip, gold thread, silica gel, transparency silica glass cover plate and gear glue frame, it is characterized in that: described ultraviolet LED chip is by the die bond face of elargol arrayed die bond at radiator, the heat that the ultraviolet LED chip operation produces can directly be transmitted on the radiator by elargol, as adding again auxiliary air-cooled or water-cooling, can reduce rapidly the PN junction working temperature of ultraviolet LED chip, row between the array ultraviolet LED chip, the column pitch distance determines according to the optical power density of ultraviolet LED curing light source, optical power density is high, distance is little, optical power density is low, and distance is large; Described LED substrate is fixed on the die bond face of radiator, reflector is arranged on the LED substrate, beat gold solder dish and routing layer, the reflector shape is a bellmouth, beat large above the aperture, below little, top aperture is that 2mm is between the 3.5mm, following aperture is that 1.7mm is between the 2mm, the position of reflector is according to the determining positions of the ultraviolet LED chip of spreader surface institute arrayed, the ultraviolet LED chip is positioned at the center of reflector, the ultraviolet light that reflector reflection ultraviolet LED chip sends, the radiation intensity of increase ultraviolet light; Beat the both sides that the gold solder dish is positioned at the reflector hole, connect the electrode of ultraviolet LED chip and play the gold solder dish with gold thread, by gold thread and beat gold solder dish connection ultraviolet LED chip, formation ultraviolet LED chip string; Routing layer is positioned at the surface of LED substrate, is used for connecting the both positive and negative polarity of different ultraviolet LED strings, links to each other so that different ultraviolet LED string is anodal, and negative pole links to each other, and forms Parallel connection structure, and the thickness of routing layer is between 10 microns to 100 microns; Described shelves glue frame surrounds all ultraviolet LED chip strings and is fixed on the LED substrate, and the silica gel overlay is filled in the gear glue frame and admittedly seals all ultraviolet LED chip strings; Described elargol is used for the die bond of ultraviolet LED chip, and wherein the content of silver powder is greater than 95%; Described quartz glass cover plate is bonded and fixed on the gear glue frame by silica gel or ultraviolet adhesive glue.Patent proposition of the present invention is a kind of simply, low cost obtains high optical power density ultraviolet LED curing light source, thoroughly solves the heat dissipation problem of high optical power density ultraviolet LED curing light source.
In above-mentioned high optical power density ultraviolet LED curing light source, the emission wavelength of described ultraviolet LED chip is in 200nm to the 420nm wave band, and this chip structure is that (namely the both positive and negative polarity of this chip is at the upper surface of chip for positive assembling structure, the lower surface insulation of chip), can the integrated single wavelength of array (such as 365nm, 395nm, 405nm and 415nm) ultraviolet LED chip, obtain unimodal value length ultraviolet line source; Also can configure the ultraviolet LED chip of the integrated different peak wavelengths of array, obtain the LED ultraviolet ray multi-wavelength hybrid light source of different peak wavelengths.
In above-mentioned high optical power density ultraviolet LED curing light source, described LED substrate is by the array taper reflector of arranging, the reflection aggtegation of the outer ultraviolet light that led chip sends of high-power purple, and be furnished with pad and the line layer of routing.
In above-mentioned high optical power density ultraviolet LED curing light source, described radiator is copper or aluminum material, and the die bond face is the horizon light sliding surface, is used for fixedly ultraviolet LED chip.
A kind of preparation method of high optical power density ultraviolet LED curing light source, for the preparation of above-mentioned light source, its specific features is that step of preparation process is as follows:
(1) gold-plated to radiator die bond face, plated thickness is between 0.075 micron to 0.2 micron;
(2) correspondence will be arranged ultraviolet LED chip part brush elargol on the Gold plated Layer of the solid product face of radiator; The elargol height is no more than 1/3 of institute's die bond ultraviolet LED chip height;
(3) place the ultraviolet LED chip at elargol;
(4) baking; Toasted 180 ° ± 15 ° of temperature 2 hours ± 10 minutes;
(5) after the reflector of the preparation of LED substrate and ultraviolet LED chip array arrangement correspondence position, fit tightly and be fixed on the die bond face of radiator;
(6) beat gold thread, the diameter of gold thread is greater than 32 microns; Make the gold thread machine with routine and beat gold thread;
(7) gear glue frame is fitted tightly placement and is fixed on the LED upper surface of base plate;
(8) embedding silica gel is filled the silica gel coating in the shelves glue frame;
(9) applying quartz glass plate is bonded at the quartz glass plate embedding on grade glue frame with silica gel or ultraviolet adhesive glue;
(10) test.
In the preparation method of above-mentioned high optical power density ultraviolet LED curing light source, described step (2) at the Gold plated Layer of radiator die bond face brush elargol is: adopt silk screen printing or related process printing elargol to be used for die bond, the thickness of elargol is less than 1/3 of the height of used ultraviolet LED chip.
In the preparation method of above-mentioned high optical power density ultraviolet LED curing light source, described step (5) is fixed on the LED substrate on the radiator die bond face and is: adopt the tin cream welding so that the LED substrate fits tightly on the die bond face of radiator.
In the preparation method of described high optical power density ultraviolet LED curing light source, during described step (9) applying quartz glass plate, should there be bubble between quartz glass plate and the silica gel.
The present invention compared with prior art, have following substantive distinguishing features and significant advantage: the present invention is simple in structure, cheap for manufacturing cost, simple to operate, heat in the time of can be rapidly the ultraviolet LED chip operation is transmitted on the radiator, again by the auxiliary air-cooled and water cooling method in the external world in time heat dissipation in external environment.Realize application and the industrialization of high optical power density ultraviolet LED curing light source.
Description of drawings
Fig. 1 is structural section schematic diagram among the present invention;
Fig. 2 is the traditional structure schematic cross-section;
Fig. 3 is schematic diagram after the radiator die bond among the present invention;
Fig. 4 is LED board structure schematic diagram among the present invention;
Fig. 5 is high luminous power ultraviolet LED curing light source module exploded perspective view among the present invention;
Fig. 6 is high luminous power ultraviolet LED curing light source module schematic diagram among the present invention;
Fig. 7 is high luminous power ultraviolet LED curing light source preparation method schematic flow sheet among the present invention.
Embodiment
Details are as follows by reference to the accompanying drawings for the preferred embodiments of the present invention:
Embodiment: ginseng Fig. 1, Fig. 3, Fig. 4, Fig. 5, Fig. 6, this high power density ultraviolet LED curing light source comprises radiator 1, LED substrate 2, elargol 3, ultraviolet LED chip 4, gold thread 5, silica gel 6, transparency silica glass cover plate 7 and gear glue frame 8, described ultraviolet LED chip 4 is by the die bond face of elargol 3 arrayed die bonds at radiator 1, the heat that 4 work of ultraviolet LED chip produce can directly be transmitted on the radiator 1 by elargol 3, as adding again auxiliary air-cooled or water-cooling, can reduce rapidly the PN junction working temperature of ultraviolet LED chip 4, row between the array ultraviolet LED chip 4, the column pitch distance determines according to the optical power density of ultraviolet LED curing light source, optical power density is high, distance is little, optical power density is low, and distance is large; Described LED substrate 2 is fixed on the die bond face of radiator 1, reflector is arranged on the LED substrate 2, beat gold solder dish and routing layer, the reflector shape is a bellmouth, beat large above the aperture, below little, top aperture at 2mm between the 3.5mm, following aperture is that 1.7mm is between the 2mm, the position of reflector is according to the determining positions of the ultraviolet LED chip 4 of spreader surface institute arrayed, ultraviolet LED chip 4 is positioned at the center of reflector, the ultraviolet light that reflector reflection ultraviolet LED chip 4 sends, the radiation intensity of increase ultraviolet light; Beat the both sides that the gold solder dish is positioned at the reflector hole, connect the electrode of ultraviolet LED chips 4 and play the gold solder dish with gold thread 5, by gold thread and beat gold solder dish connection ultraviolet LED chip 4, formation ultraviolet LED chip string; Routing layer is positioned at the surface of LED substrate 2, is used for connecting the both positive and negative polarity of different ultraviolet LED strings 4, links to each other so that different ultraviolet LED string is anodal, and negative pole links to each other, and forms Parallel connection structure, and the thickness of routing layer is between 10 microns to 100 microns; Described shelves glue frame 8 is fixed on the LED substrate 2, surrounds all ultraviolet LED chip strings, and silica gel 6 overlays are filled in gear glue frame 8 interior all ultraviolet LED chip strings that admittedly seal; Described elargol 3 is used for the die bond of ultraviolet LED chip 4, and wherein the content of silver powder is greater than 95%; Described quartz glass cover plate 7 is bonded and fixed on the gear glue frame 8 by silica gel or ultraviolet adhesive glue.Patent proposition of the present invention is a kind of simply, low cost obtains high optical power density ultraviolet LED curing light source, thoroughly solves the heat dissipation problem of high optical power density ultraviolet LED curing light source.
The ginseng Fig. 2, compare with the present invention, in traditional ultraviolet LED curing light source, the ultraviolet LED chip be die bond on the LED substrate, the LED substrate is fitted in the surface of radiator again by one deck heat-conducting cream 9.Because the conductive coefficient of heat-conducting cream 9 is very low, therefore form the heat conduction bottleneck at this, the heat that produces in the time of can not be the work of ultraviolet LED light source in time dissipates out.So that the too high generation light decay of the junction temperature of ultraviolet LED chip PN junction.The LED substrate is structurally also different with substrate of the present invention in addition.
Embodiment two: the present embodiment and embodiment one are basic identical, special feature is as follows: described high optical power density ultraviolet LED curing light source, it is characterized in that: the emission wavelength of described ultraviolet LED chip 4 is in 200nm to the 420nm wave band, and this chip structure is positive assembling structure, namely the both positive and negative polarity of this chip is at the upper surface of chip, the lower surface insulation of chip with the integrated single length ultraviolet led chip 4 of array, obtains unimodal value length ultraviolet line source; Perhaps with the ultraviolet LED chip 4 of the integrated different peak wavelengths of configuration array, obtain the LED ultraviolet ray multi-wavelength hybrid light source of different peak wavelengths.
Described high optical power density ultraviolet LED curing light source is characterized in that: described radiator 1 is copper or aluminum material, and the die bond face is the horizon light sliding surface, is used for fixedly ultraviolet LED chip 4.
Embodiment three: with reference to figure 7, the preparation method of this high optical power density ultraviolet LED curing light source for the preparation of above-mentioned light source, is characterized in that step of preparation process is as follows:
(1) gold-plated to radiator 1 die bond face, plated thickness is between 0.075 micron to 0.2 micron;
(2) correspondence will be arranged ultraviolet LED chip 4 parts brush elargol 3 on the Gold plated Layer of radiator 1 die bond face; Elargol 3 highly is no more than 1/3 of institute's die bond ultraviolet LED chip 4 height;
(3) place ultraviolet LED chip 4 at elargol 3;
(4) baking; Toasted 180 ° ± 15 ° of temperature 2 hours ± 10 minutes;
(5) LED substrate 2 is fitted tightly on the die bond face that is fixed on radiator 1;
(6) beat gold thread, the diameter of gold thread is greater than 32 microns; Make the gold thread machine with routine and beat gold thread;
(7) gear glue frame 8 is fitted tightly placement and is fixed on LED substrate 2 upper surfaces;
(8) embedding silica gel 6, and silica gel 6 coatings are filled in the shelves glue frame 8;
(9) the applying quartz glass plate 7, with silica gel or ultraviolet adhesive glue quartz glass plate 7 embeddings are bonded on grade glue frame 8;
(10) test.
Embodiment four: the present embodiment and embodiment three are basic identical, special feature is as follows: above-mentioned steps (2) at the Gold plated Layer brush elargol of radiator 1 solid product face is: adopt silk screen printing or related process printing elargol to be used for die bond, the thickness of elargol is less than the thickness 1/3 of used ultraviolet LED chip; Above-mentioned steps (5) is fixed on LED substrate 2 on the die bond face of radiator 1: adopt the tin cream welding so that LED substrate 2 fits tightly on the die bond face of radiator; During above-mentioned steps (9) applying quartz glass plate 7, should there be bubble in quartz glass plate 7 and the silica gel 6.
Claims (7)
1. one kind high optical power density ultraviolet LED curing light source, comprise radiator (1), LED substrate (2), elargol (3), ultraviolet LED chip (4), gold thread (5), silica gel (6), transparency silica glass cover plate (7) and gear glue frame (8), it is characterized in that described ultraviolet LED chip (4) is by the die bond face of elargol (3) arrayed die bond at radiator (1), described LED substrate (2) is fixed on the solid product face of radiator (1), and the LED substrate has reflector on (2), beat gold solder dish and routing layer; Described reflector shape is a bellmouth, large above the aperture of this bellmouth, below little, top aperture is that 2mm is between the 3.5mm, following aperture is that 1.7mm is between the 2mm, it is corresponding that the position of reflector and the position of the ultraviolet LED chip (4) of the surperficial institute of radiator (1) arrayed are thought, ultraviolet LED chip (4) is positioned at the center of reflector; Beat the both sides that the gold solder dish is positioned at reflector, connect the electrode of ultraviolet LED chip (4) and play the gold solder dish with gold thread (5), by gold thread (5) and beat gold solder dish connection ultraviolet LED chip (4), formation ultraviolet LED chip string; Routing layer is positioned at the surface of LED substrate (2), is used for connecting the both positive and negative polarity of different ultraviolet LED chip strings, links to each other so that different ultraviolet LED chip string is anodal, and negative pole links to each other, and forms Parallel connection structure, and the thickness of routing layer is between 10 microns to 100 microns; Described shelves glue frames (8) are fixed on the LED substrate (2), surround all ultraviolet LED chip strings, and silica gel (6) overlay is filled in the gear glue frame (8); Admittedly seal all ultraviolet LED chip strings; Described elargol (3) is used for the die bond of ultraviolet LED chip (4), and wherein the content of silver powder is greater than 95%; Described quartz glass cover plate (7) is bonded and fixed on the gear glue frame (8) by silica gel or ultraviolet adhesive glue.
2. high optical power density ultraviolet LED curing light source according to claim 1, it is characterized in that: the emission wavelength of described ultraviolet LED chip (4) is in 200nm to the 420nm wave band, and this chip structure is positive assembling structure, namely the both positive and negative polarity of this chip is at the upper surface of chip, the lower surface insulation of chip, with the integrated single length ultraviolet led chip of array, obtain unimodal value length ultraviolet line source; Perhaps with the ultraviolet LED chip of the integrated different peak wavelengths of configuration array, obtain the LED ultraviolet ray multi-wavelength hybrid light source of different peak wavelengths.
3. high optical power density ultraviolet LED curing light source according to claim 1, it is characterized in that: described radiator (1) is copper or aluminum material, and the die bond face is the horizon light sliding surface, is used for fixedly ultraviolet LED chip (4).
4. the preparation method of one kind high optical power density ultraviolet LED curing light source for the preparation of high optical power density ultraviolet LED curing light source according to claim 1, is characterized in that step of preparation process is as follows:
(1) gold-plated to radiator (1) die bond face, plated thickness is between 0.075 micron to 0.2 micron;
(2) correspondence will be arranged ultraviolet LED chip (4) part brush elargol (3) on the Gold plated Layer of radiator (1) die bond face; Elargol (3) highly is no more than 1/3 of institute's die bond ultraviolet LED chip (4) height;
(3) place ultraviolet LED chip (4) at elargol (3);
(4) baking; Toasted 180 ° ± 10 ° of temperature 2 hours ± 10 minutes;
(5) after the reflector of LED substrate (2) preparation and ultraviolet LED chip (4) arrayed correspondence position, fit tightly and be fixed on the die bond face of radiator 1;
(6) beat gold thread, the diameter of gold thread is greater than 32 microns; Make the gold thread machine with routine and beat gold thread;
(7) gear glue frame (8) is fitted tightly placement and is fixed on LED substrate (2) upper surface;
(8) embedding silica gel (6) is filled silica gel (6) coating in the shelves glue frames (8);
(9) applying quartz glass plate (7) is bonded at quartz glass plate (7) embedding on grade glue frame (8) with silica gel or ultraviolet adhesive glue;
(10) test.
5. the preparation method of high optical power density ultraviolet LED curing light source according to claim 4 is characterized in that described step (2) realizes die bond at the Gold plated Layer brush elargol of radiator (1) die bond face.
6. the preparation method of high optical power density ultraviolet LED curing light source according to claim 4 is characterized in that described step (5) is fixed on LED substrate (2) on the die bond face of radiator (1) and is: adopt the tin cream welding so that LED substrate (2) fits tightly on the die bond face of radiator (1).
7. the preparation method of high optical power density ultraviolet LED curing light source according to claim 4 when it is characterized in that described step (9) applying quartz glass plate (7), should not have bubble between quartz glass plate (7) and the silica gel (6).
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| CN103165807A (en) * | 2013-03-26 | 2013-06-19 | 朱小春 | Light-emitting diode (LED) light emitting module and manufacturing method thereof |
| CN103794603A (en) * | 2014-02-18 | 2014-05-14 | 江苏新广联科技股份有限公司 | Packaging-free UVLED solidification light source module |
| CN105932146A (en) * | 2016-06-15 | 2016-09-07 | 青岛杰生电气有限公司 | Ultraviolet light-emitting device |
| CN106058031A (en) * | 2016-08-08 | 2016-10-26 | 中山市光圣半导体科技有限责任公司 | Integrated high-power ultraviolet LED heat dissipation plate |
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| CN108962882A (en) * | 2018-07-04 | 2018-12-07 | 深圳世元吉科技发展有限公司 | A kind of UV LED encapsulating structure, production method and sterilizing unit |
| US20190031930A1 (en) * | 2017-07-28 | 2019-01-31 | Ledvance Llc | Systems and methods for curing an ultraviolet adhesive within a container |
| CN109314165A (en) * | 2016-06-01 | 2019-02-05 | 信越石英株式会社 | The gas-tight seal manufacturing method with quartz glass component and ultraviolet light LED quartz glass component of ultraviolet light SMD type LED element |
| CN112736184A (en) * | 2019-10-29 | 2021-04-30 | 深圳第三代半导体研究院 | High-power chip packaging heat dissipation structure and preparation method thereof |
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