CN202013883U - High-power LED (Light Emitting Diode) module sealing structure - Google Patents
High-power LED (Light Emitting Diode) module sealing structure Download PDFInfo
- Publication number
- CN202013883U CN202013883U CN201120038851.7U CN201120038851U CN202013883U CN 202013883 U CN202013883 U CN 202013883U CN 201120038851 U CN201120038851 U CN 201120038851U CN 202013883 U CN202013883 U CN 202013883U
- Authority
- CN
- China
- Prior art keywords
- led chip
- led chips
- gold thread
- led
- sealing structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007789 sealing Methods 0.000 title abstract 6
- 239000000843 powder Substances 0.000 claims abstract description 15
- 241000218202 Coptis Species 0.000 claims abstract description 13
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000741 silica gel Substances 0.000 claims description 17
- 229910002027 silica gel Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 239000003292 glue Substances 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 7
- 238000005266 casting Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 238000009434 installation Methods 0.000 abstract description 4
- 238000010923 batch production Methods 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 abstract 5
- 238000004382 potting Methods 0.000 abstract 2
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000005439 thermosphere Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
The utility model relates to a high-power LED (Light Emitting Diode) module sealing structure which effectively solves the problems that the cooling effect is poor, the installation is complex, and batch production is not easy to perform. The sealing structure has the technical scheme that the sealing structure comprises a radiator, LED chips, a gold thread, fluorescent powder and electrodes; wherein the LED chips are arranged on the front surface of a cooling insulating baseplate, a uniform array is composed by a plurality of LED chips, all the LED chips are in serial or parallel connection through the gold thread and then are welded with wiring terminals of the positive and negative electrode; a fluorescent powder layer is arranged at the periphery and the top parts of the LED chips; the LED chips, the gold thread and the fluorescent powder layer are sealed in a pit at the upper part of the cooling insulating base plate by potting adhesive; a lens used for sealing is arranged on the potting adhesive; and the radiator is arranged at the rear part of the cooling insulating base plate. The LED module sealing structure is convenient to install and use and has novel and unique structure, low cost, high brightness, good light quality, good cooling effect and long service life.
Description
One, technical field
The utility model relates to the LED lighting field, particularly a kind of high-power LED module encapsulating structure.
Two, background technology
Light-emitting diode belong to the 4th generation light source, have advantages such as energy-saving and environmental protection, volume is little, the life-span is long, extensively apply to indicator light, display panel, backlight at present, and in all kinds of electric equipment productss such as ordinary luminaire, decorating lighting lamp, along with the day by day ripe utilization field of great power LED technology is more extensive, but because structural problem, from being used for illumination, heat dissipation problem is restricting the development and the application of great power LED always, and usually the heat dissipation channel of LED light fixture has three: one, chip, phosphor powder layer, casting glue, lens, to environment; Two, chip, gold thread, electrode pin are to environment; Three, chip, crystal-bonding adhesive, thermosphere, adhesive glue, radiator, to environment.Wherein the 3rd is main heat dissipation channel, have approximately in 98% the heat energy environment around being lost to by this approach, therefore shorten and improve main heat dissipation channel, to improve the LED radiating effect greatly, reduction LED junction temperature, and present led module encapsulates installation complexity when being used for illuminator, difficult batch process etc., therefore, its improvement and innovation are the technical problems that needs to be resolved hurrily.
Three, summary of the invention
At the problems referred to above, for overcoming the defective of prior art, the purpose of the utility model just provides a kind of high-power LED module encapsulating structure that heat radiation is good and combined is installed, and effectively solves the radiating effect difference and complexity is installed, and is difficult for the problem of producing in batches.
Technical solutions of the utility model are as follows:
The high-power LED module encapsulating structure, comprise radiator, led chip, gold thread, fluorescent material, electrode, led chip is contained on the radiating insulating substrate front side, led chip is a plurality of, constitute uniform array row, each chip chamber is by behind the gold thread serial or parallel connection, weld together with the positive and negative electrode binding post, phosphor powder layer is arranged at around the led chip and top, led chip, gold thread and phosphor powder layer are packaged in the pit on radiating insulating substrate top by casting glue, be useful on the lens of encapsulation on the casting glue, radiator is equipped with at radiating insulating substrate rear portion.
The utility model novel structure uniqueness, installation, easy to use, cost is low, and brightness is big, and light quality is good, good heat dissipation effect, long service life.
Four, description of drawings
Fig. 1 is a three-dimensional structure diagram of the present utility model.
Fig. 2 is a Chip Packaging cut-away section front view of the present utility model.
Five, embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is elaborated.
Shown in Fig. 1-2, the utility model comprises radiator, led chip, gold thread, fluorescent material, electrode, led chip 6 is contained on radiating insulating substrate 12 fronts, led chip is a plurality of, constitute uniform array row, each chip chamber is by behind gold thread 11 serial or parallel connections, weld together with positive and negative electrode binding post 4, phosphor powder layer 9 is arranged at around the led chip and top, LED chip, gold thread and phosphor powder layer are packaged in the pit on radiating insulating substrate top by embedding silica gel, be useful on the lens 10 of encapsulation on the casting glue, radiator 2 is equipped with at radiating insulating substrate rear portion.
In order to guarantee result of use and installation, easy to maintenance, described led chip connects through elargol, crystal-bonding adhesive or common gold solder and is anchored on the radiating insulating substrate, and embedding silica gel enclosing wall 7 is arranged outside the led chip 6; On the pit inwall on described radiating insulating substrate top reflector layer 8 is arranged; Described radiator 2 one ends have triangular groove 1, and the other end has triangular tongue 3; Described radiating insulating substrate 12, led chip 6, embedding silica gel and lens 10 are packaged together, and constitute a LED lamp 5.
Described radiator is by copper, the contour heat conduction alloy material of aluminium or magnesium is made, the led chip encapsulation region has N pit on substrate, the pit inwall is done silver-plated processing or is provided with reflector layer, be provided with high-power LED chip in the pit, the bottom substrate direct and radiator that is adhered to pit by crystal-bonding adhesive or common gold is associated in together, again that coefficient of viscosity is suitable silica gel, use point gum machine around led chip, to carry out picture glue or some glue, around led chip, be coated with the last layer silica gel enclosing wall, the enclosure wall of silica gel can carry out single or multiple according to required fluorescent powder silica gel thickness and draw glue and some glue, the product that coats silica gel enclosing wall is toasted, treat to carry out routing after silica gel enclosing wall is solidified, irritate layer of fluorescent powder silica gel in the presumptive area again behind the press-welding lead wires, baking-curing again, owing to around the LED chip, use the silica gel cloth silica gel enclosing wall, fluorescent powder silica gel can not flow to because of fluid mechanics outside the non-luminous region, the lip-deep fluorescent powder silica gel of whole actual led chip can evenly be coated with, can not cause the waste of fluorescent powder silica gel and increase whole luminous efficiency.Can arrange a plurality of power-type LED chips in the encapsulation region simultaneously to realize encapsulation integrated high power LED light source, be provided with the electrode terminal 4 of the serial or parallel connection of LED group at the pit two ends, each encapsulating structure forms a LED lamp.
The two ends of radiator also are provided with triangular groove and triangular tongue, can install and increase and reduce the quantity and the power of packaged light source module easily and fast.
Described led chip is generally selected the high power semi-conductor diode for use, and commonly used is the led chip of single 2W of luminous efficiency height, stable performance at present.
Good effect of the present utility model the encapsulation on than traditional saving about 50% expensive fluorescent material, and led chip connects radiator through the radiating insulating substrate, shortens heat dissipation channel, has significantly reduced calorific value, compare with former encapsulating structure, under equal conditions can reduce about 5-20 ℃ of LED junction temperature, both energy-conservation, non-environmental-pollution again, safety, long service life is beneficial to people's use of throwing light on, and economic and social benefit is remarkable.
Claims (4)
1. high-power LED module encapsulating structure, comprise radiator, led chip, gold thread, fluorescent material, electrode, it is characterized in that, led chip (6) is contained on radiating insulating substrate (12) front, led chip is a plurality of, constitute uniform array row, each chip chamber is by behind gold thread (11) serial or parallel connection, weld together with positive and negative electrode binding post (4), phosphor powder layer (9) is arranged at around the led chip and top, led chip, gold thread and phosphor powder layer are packaged in by embedding silica gel in the pit on radiating insulating substrate top, are useful on the lens (10) of encapsulation on the casting glue, and radiator (2) is equipped with at radiating insulating substrate rear portion.
2. high-power LED module encapsulating structure according to claim 1 is characterized in that, embedding silica gel enclosing wall (7) is arranged outside the described led chip (6).
3. high-power LED module encapsulating structure according to claim 1 is characterized in that, on the pit inwall on described radiating insulating substrate top reflector layer (8) is arranged.
4. high-power LED module encapsulating structure according to claim 1 is characterized in that, described radiator (2) one ends have triangular groove (1), and the other end has triangular tongue (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120038851.7U CN202013883U (en) | 2011-02-15 | 2011-02-15 | High-power LED (Light Emitting Diode) module sealing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120038851.7U CN202013883U (en) | 2011-02-15 | 2011-02-15 | High-power LED (Light Emitting Diode) module sealing structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202013883U true CN202013883U (en) | 2011-10-19 |
Family
ID=44784498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120038851.7U Expired - Fee Related CN202013883U (en) | 2011-02-15 | 2011-02-15 | High-power LED (Light Emitting Diode) module sealing structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202013883U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102980155A (en) * | 2012-12-04 | 2013-03-20 | 东莞市中实创半导体照明有限公司 | An LED integrated light source base plate |
| CN104157637A (en) * | 2014-08-25 | 2014-11-19 | 北京大学东莞光电研究院 | MCOB LED package structure |
| CN105304794A (en) * | 2015-10-30 | 2016-02-03 | 东莞市光宇实业有限公司 | A high-power LED packaging structure |
| CN106122901A (en) * | 2016-07-01 | 2016-11-16 | 广州柏睿光电科技有限公司 | A kind of illuminator |
| WO2019037094A1 (en) * | 2017-08-25 | 2019-02-28 | Cree Huizhou Solid State Lighting Company Ltd. | Multiple led light source lens design in an integrated package |
| WO2019085479A1 (en) * | 2017-10-30 | 2019-05-09 | 深圳市立洋光电子股份有限公司 | Support-free packaged led light source and manufacturing method therefor |
| CN112289780A (en) * | 2020-10-14 | 2021-01-29 | 深圳市同一方光电技术有限公司 | LED packaging structure, processing method, lamp strip and lamp |
-
2011
- 2011-02-15 CN CN201120038851.7U patent/CN202013883U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102980155A (en) * | 2012-12-04 | 2013-03-20 | 东莞市中实创半导体照明有限公司 | An LED integrated light source base plate |
| CN104157637A (en) * | 2014-08-25 | 2014-11-19 | 北京大学东莞光电研究院 | MCOB LED package structure |
| CN105304794A (en) * | 2015-10-30 | 2016-02-03 | 东莞市光宇实业有限公司 | A high-power LED packaging structure |
| CN106122901A (en) * | 2016-07-01 | 2016-11-16 | 广州柏睿光电科技有限公司 | A kind of illuminator |
| WO2019037094A1 (en) * | 2017-08-25 | 2019-02-28 | Cree Huizhou Solid State Lighting Company Ltd. | Multiple led light source lens design in an integrated package |
| WO2019085479A1 (en) * | 2017-10-30 | 2019-05-09 | 深圳市立洋光电子股份有限公司 | Support-free packaged led light source and manufacturing method therefor |
| CN112289780A (en) * | 2020-10-14 | 2021-01-29 | 深圳市同一方光电技术有限公司 | LED packaging structure, processing method, lamp strip and lamp |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111019 Termination date: 20130215 |