CN204834688U - High power UV uv light source - Google Patents
High power UV uv light source Download PDFInfo
- Publication number
- CN204834688U CN204834688U CN201520515875.5U CN201520515875U CN204834688U CN 204834688 U CN204834688 U CN 204834688U CN 201520515875 U CN201520515875 U CN 201520515875U CN 204834688 U CN204834688 U CN 204834688U
- Authority
- CN
- China
- Prior art keywords
- led
- high power
- ultraviolet source
- ceramic substrate
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model discloses a high power UV uv light source with gold thread lead bonding UV -LED chip positive and negative electrode to the corresponding electrode district of ceramic substrate, then connects ceramic substrate the direct crystalline substance admittedly of LED chip on the copper base plate through the tin ball bonding on low temperature burns ceramic substrate's silver -colored heat conduction piece altogether, links to each other with the copper radiator of taking the fan through the heat conduction silicone grease at last, and whole packaging structure's thermal resistance is less. The utility model discloses a silicon resin and the glass lens very high to ultraviolet ray transmission rate, improved luminous efficiency greatly. On arc structural design, install the support of arc with bar UV -LED module on, the effect of reinforcing center radiation light intensity is reached through cambered surface spotlight.
Description
Technical field
The utility model relates to LED field, relates to a kind of high power UV ultraviolet source specifically.
Background technology
Ultraviolet light-emitting diode (UV-LED) is compared traditional UV sources and is had the features such as luminous efficiency is high, life-span length, energy-saving and environmental protection, reaction speed is fast, volume is little, UV LED chip technology and encapsulation technology are developed rapidly in recent years, make it have huge market prospects in industries such as ink solidifications.Investment research and development ultraviolet LED light source is all fallen over each other in multiple countries and regions, this development of the industry such as photoelectron, material, the energy, semiconductor chip processing procedure and encapsulation also will promoting further to be correlated with.
Compared with abroad, that universities' research institutes or all kinds of enterprise are all also at the early-stage to the research of UV-LED no matter domestic, substantially still the starting stage is in, UV-LED encapsulates enterprise and does not also grasp core technology, packing forms is same, the package design form innovated is not proposed, light power is larger apart from external LED enterprise gap, technical strength is not strong on the whole, scope of the enterprise is common less than normal, lack patent and core technology, core component dependence on import, be unfavorable for forming competitive advantage and famous brand name.
Along with reaching its maturity of visible regime, researcher shifts research emphasis gradually to the ultraviolet light of short wavelength, and ultraviolet light has major application to be worth in fields such as silk screen printing, polymer cure, environmental protection, white-light illuminating and military detections.Ultraviolet light can be divided near ultraviolet UVA(320nm-400nm according to wavelength), UVB(275nm-320nm) and far ultraviolet UVC(100nm-275nm).Along with improving constantly of the fast development of LED technology and the luminous efficiency of LED chip and encapsulation technology, short wavelength UV LED(UV-LED in recent years) huge using value causes showing great attention to of people, becomes the new focus of global semiconductor area research and investment.UV-LED is the solid light source that newly-developed gets up, its spectral band concentrates in ultraviolet range, compare traditional UV sources, have unique advantage, comprise the plurality of advantages such as low in energy consumption, luminescence response is fast, reliability is high, radiation efficiency is high, the life-span is long, environmentally safe, compact conformation, optimumly wish that replacing existing ultraviolet high-pressure mercury-vapor lamp becomes follow-on ultraviolet source.
Just because of have above plurality of advantages, UV-LED becomes one of new study hotspot of each major company of the world and research institution nearly ten years.In the light output increasing UV-LED, research and development are not limited only to improve internal quantum efficiency by amount of impurities, lattice defect and the dislocation changed in material, and meanwhile, the continuous lifting of UV-LED chip input power proposes more stern challenge to encapsulation technology.How to improve tube core and internal enclosing structure, strengthen the probability that UV-LED inside produces photon outgoing, improve light efficiency, solve heat dissipation problem, carry out getting the flow-optimized design of light and heat, improve optical property, accelerating surface mount process, is also the important directions of UV-LED research and development.
UV-LED, as a kind of novel semiconductor solid-state optical source, has wide market application foreground.But we also must see, the LED technology of current ultraviolet band also far lags behind White light LED technology, is in particular in that radiant power little (be generally only 2-6mW, high-power chip is no more than 100mW), price are high simultaneously.The radiation peak wavelength of UV LED chip also drops between 380-420nm mostly in addition, and the most efficient absorption wave band interval of UV inks solidification is 360nm-375nm.Therefore, want to prepare practical ultraviolet LED light source system for applications such as ink solidifications, multiple chips array structure must be adopted to strengthen the radiation intensity of single tube LED chip.Now single-chip package technology simply for the encapsulation of multiple chips array, but can not must adopt new method, new construction, new technology.
Current white light LEDs is progressively accepted by market, and except for except traditional white-light illuminating, LED television, LED display gradually become main flow, and cost and the performance of white light LEDs are increasingly rationalized, define strong challenge to conventional light source.But be limited to the development of current UV-LED chip technology, the radiant power of UV-LED chip is also very little, and price still remains high, therefore UV-LED temporarily can't form challenge to traditional high-pressure mercury uviol lamp.But along with the development of science and technology, UV-LED will welcome the opportunity of its great development in the near future.At present, the research and development of project breach the barrier of current LED technology, further and the gap of advanced foreign technology, solve the irradiation evenness problem of multiple chips array ultraviolet LED area source, the radiation intensity problem of multiple chips array ultraviolet LED area source and heat dissipation problem, in the development in future, project technical development is very necessary.
Compared with abroad, that universities' research institutes or all kinds of enterprise are all also at the early-stage to the research of UV-LED no matter domestic, substantially still the starting stage is in, technical strength is not strong on the whole, scope of the enterprise is common less than normal, lack patent and core technology, core component dependence on import, be unfavorable for forming competitive advantage and famous brand name.Say from another point of view, this provides very large development space in the research in this field also to us.
At ultraviolet chip manufacture view, the main production firm of TaiWan, China, the input power of its relatively high power product is 1.2W, and radiant power is at 10-70mW.Calendar year 2001, University Of Nanchang and Nanchang company first develop the InGaNUV-LED chip of UVA wave band at home, and its radiation peak wavelength is 375-385nm, rated voltage 5.0V, forward current 20mA, and radiant output power 0.5mW, can be used as false proof ultraviolet source.
Therefore, China UV-LED encapsulates enterprise and does not also grasp core technology as can be seen from above, and packing forms is same, and do not propose the package design form innovated, light power is larger apart from external LED enterprise gap.Following LED wants large-scale application, and the power of individual devices must increase, and the increase of input power proposes higher challenge to encapsulation technology, must adopt new packing forms and encapsulation theory.
At present, in the technical research of ultraviolet LED, mainly there is following problem.
1, the irradiation evenness problem of multiple chips array ultraviolet LED area source.The radiation uniformity is directly relevant with the application such as solidification, the bad solidification effect that must affect entirety of the uniformity.Single-chip can regard as point-source of light, and the area source radiation effect after multiple chips array is the superposition of a single point radiation of light source effect, brings the problem of the irradiation surface radiation uniformity.Irradiation evenness is relevant to which encapsulation parameter, and what the impact of these parameters on the radiation uniformity be, how each parameter arranges to obtain best optimum results, and this is all the problem that must consider.
2, the radiation intensity problem of multiple chips array ultraviolet LED area source, because single UV LED chip power can not reach the requirement of application, so must adopt the packing forms of multiple chips array.Adopt which kind of array structure effectively can improve radiation intensity, radiation intensity is relevant to which encapsulation parameter, and these parameters are again how to affect radiation intensity, and the optimal design of parameter is all the problem that must solve in ultraviolet LED light source research.
3, heat dissipation problem becomes particularly outstanding.When LED is luminous, the electric energy conversion of about 80% is heat.The heat of single UV-LED generation is also fewer, but after the packaged type adopting multiple chips array, due to increasing considerably of packaging density, the heat that the heat that unit are produces produces considerably beyond single encapsulation, how a large amount of heats being dissipated in time efficiently the external world is a particularly important difficult problem, the important place of this LED heat management just.
Utility model content
For deficiency of the prior art, the technical problems to be solved in the utility model there are provided effective, the loose heat-staple high power UV ultraviolet source of a kind of irradiation.
State technical problem, the utility model is realized by following scheme: a kind of high power UV ultraviolet source, this UV ultraviolet source comprises arc support, and the UV-LED module be arranged on arc support, described UV-LED module comprises illuminating part, heat-conducting part, radiating part, described illuminating part comprises UV-LED chip, heat-conducting part comprises silver-colored heat-conducting block, radiating part comprises copper radiator, copper base, described UV-LED chip die bond is on the silver-colored heat-conducting block of low-temperature co-fired ceramic substrate, the wire bonding UV-LED chip positive and negative electrode of gold thread is to the electrode district of ceramic substrate, described ceramic substrate is connected on copper base by tin ball bonding, be connected with copper radiator finally by heat-conducting silicone grease, described ceramic substrate arranges silicones, the glass lens of semicircle encapsulates.
Further, described silver-colored heat-conducting block is heat conduction elargol.
Further, described copper radiator is provided with fan.
Further, described glass lens employing refractive index is the quartz glass lens of 1.46.
Further, the refractive index of described silicones is the silicones of 1.54.
Further, described UV-LED chip employing refractive index is the sapphire attachment of 1.76.
Further, described arc support semicircular in shape, it comprises the arc connector of two semicircles, and described arc connector is connected on base by straight shape support, and described base is provided with boss.
Further, described boss is placed with the ink be cured.
Further, one end of described arc connector-LED module, the width of described groove is consistent with the width of UV-LED module, and the described UV-LED module other end is fixed on boss.
Relative to prior art, the beneficial effects of the utility model are: the utility model by direct for LED chip die bond on the silver-colored heat-conducting block of low-temperature co-fired ceramic substrate, by gold thread wire bonding UV-LED chip positive and negative electrode to the corresponding electrode district of ceramic substrate, then ceramic substrate is connected on copper base by tin ball bonding, be connected finally by the copper radiator of heat-conducting silicone grease with band fan, the thermal resistance of whole encapsulating structure is less.The utility model have employed the very high silicones of ultraviolet transmittance and glass lens, substantially increases light extraction efficiency.Due to employ refractive index be 1.54 silicones and refractive index be 1.46 quartz glass lens, the sapphire (LED chip) being 1.76 with refractive index forms the three-decker that refractive index is successively decreased, eliminate the light losing of total reflection, also help and reduce the Fresnel loss of light in communication process.In arcuate structure design, bar shaped UV-LED module is installed on the support of circular arc, is reached the effect strengthening center radiation light intensity by cambered surface optically focused.
The two ends of bar-shaped LED are separately fixed on arc connector, and arc connector is connected on base by straight shape support, and the boss on base is used for placing the ink be cured.On connector, each recess is used for fixing one end of bar-shaped LED, is bolted.Width and the bar-shaped LED width of recess meet.Two arc connectors can well be connected and fixed by support, ensure to connect precision.Base convex platform is used for placing the ink be cured, its height dimension can ensure bar shaped UV-LED light source to ink distance meet radiation length requirement.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the utility model UV-LED modular structure schematic diagram.
Fig. 2 is the utility model arc support side schematic view.
Fig. 3 is the utility model arc support overall structure stereogram.
Mark in accompanying drawing: glass lens 1, silicones 2, silver-colored heat-conducting block 3, tin ball 4, heat-conducting silicone grease 5, copper radiator 6, copper base 7, ceramic substrate 8, gold thread 9, UV-LED chip 10, arc support 12, arc connector 121, boss 122, base 123, straight shape support 124.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail, to make advantage of the present utility model and feature can be easier to be readily appreciated by one skilled in the art, thus more explicit defining is made to protection range of the present utility model.
The utility model is in global design, and study a kind of light, ultraviolet LED encapsulating structure that heat management is good, one is encapsulating structure reasonable in design, and two is select rational encapsulating material, guarantees that on heat passage, thermal resistance is less.Changing bottom in LED design is entity, has thoroughly broken away from the problem of detail rigidity difference, and material also can change aluminium into simultaneously, significantly reduces weight.
Please refer to accompanying drawing 1 ~ 3, a kind of high power UV ultraviolet source of the present utility model, this UV ultraviolet source comprises arc support 12, and the UV-LED module be arranged on arc support 12, described UV-LED module comprises illuminating part, heat-conducting part, radiating part, described illuminating part comprises UV-LED chip 10, heat-conducting part comprises silver-colored heat-conducting block 3, radiating part comprises copper radiator 6, copper base 7, described UV-LED chip 10 die bond is on the silver-colored heat-conducting block 3 of low-temperature co-fired ceramic substrate 8, wire bonding UV-LED chip 10 positive and negative electrode of gold thread 9 is to the electrode district of ceramic substrate 8, described ceramic substrate 8 is welded on copper base 7 by tin ball 4, be connected with copper radiator 6 finally by heat-conducting silicone grease 5, described ceramic substrate 8 arranges silicones 2, the glass lens 1 of semicircle encapsulates.Described silver-colored heat-conducting block 3 is heat conduction elargol.Described copper radiator 6 is provided with fan.Described glass lens 1 adopt refractive index be 1.46 quartz glass lens, the refractive index of described silicones 2 is the silicones of 1.54, described UV-LED chip 10 adopt refractive index be 1.76 sapphire attachment, described arc support 12 semicircular in shape, it comprises the arc connector 121 of two semicircles, described arc connector 121 is connected on base 123 by straight shape support 124, and described base 123 is provided with boss 122.Described boss 122 is placed with the ink be cured.Described arc connector 121 is provided with groove, described UV-LED module is bar shaped, make at each groove the one end being joined with bolts UV-LED module, the width of described groove is consistent with the width of UV-LED module, and the described UV-LED module other end is fixed on boss 122.
The utility model by UV-LED chip 10 directly die bond on the silver-colored heat-conducting block 3 of low-temperature co-fired ceramic substrate 8, by gold thread 9 wire bonding UV-LED chip 10 positive and negative electrode to the corresponding electrode district of ceramic substrate 8, then ceramic substrate 8 is welded on copper base 7 by tin ball 4, be connected finally by the copper radiator 6 of heat-conducting silicone grease 5 with band fan, the thermal resistance of whole encapsulating structure is less.The utility model have employed the very high silicones 2 of ultraviolet transmittance and glass lens 1, substantially increases light extraction efficiency.Due to employ refractive index be 1.54 silicones 2 and refractive index be 1.46 quartz glass lens 1, the sapphire UV-LED chip 10 being 1.76 with refractive index forms the three-decker that refractive index is successively decreased, eliminate the light losing of total reflection, also help and reduce the Fresnel loss of light in communication process.In arcuate structure design, bar shaped UV-LED module is installed on the support of circular arc, is reached the effect strengthening center radiation light intensity by cambered surface optically focused.
The two ends of bar shaped UV-LED module are separately fixed on arc connector 121, and arc connector 121 is connected on base by straight shape support, and the boss on base is used for placing the ink be cured.On arc connector 121, each recess is used for fixing one end of UV-LED module, is bolted.Width and the bar-shaped LED width of recess meet.Two arc connectors 121 can well be connected and fixed by straight shape support 124, ensure to connect precision.Base 123 convex platform 122 is used for placing the ink be cured, its height dimension can ensure bar shaped UV-LED light source to ink distance meet radiation length requirement.
The foregoing is only preferred implementation of the present utility model; not thereby the scope of the claims of the present utility model is limited; every utilize the utility model specification and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present utility model.
Claims (9)
1. a high power UV ultraviolet source, it is characterized in that: this UV ultraviolet source comprises arc support (12), and the UV-LED module be arranged on arc support (12), described UV-LED module comprises illuminating part, heat-conducting part, radiating part, described illuminating part comprises UV-LED chip (10), heat-conducting part comprises silver-colored heat-conducting block (3), radiating part comprises copper radiator (6), copper base (7), described UV-LED chip (10) die bond is on the silver-colored heat-conducting block (3) of low-temperature co-fired ceramic substrate (8), wire bonding UV-LED chip (10) positive and negative electrode of gold thread (9) is to the electrode district of ceramic substrate (8), described ceramic substrate (8) is welded on copper base (7) by tin ball (4), be connected with copper radiator (6) finally by heat-conducting silicone grease (5), described ceramic substrate (8) is arranged silicones (2), the glass lens (1) of semicircle encapsulates.
2. a kind of high power UV ultraviolet source according to claim 1, is characterized in that: described silver-colored heat-conducting block (3) is heat conduction elargol.
3. a kind of high power UV ultraviolet source according to claim 1, is characterized in that: (6) are provided with fan to described copper radiator.
4. a kind of high power UV ultraviolet source according to claim 1, is characterized in that: described glass lens (1) employing refractive index is the quartz glass lens of 1.46.
5. a kind of high power UV ultraviolet source according to claim 1, is characterized in that: the refractive index of described silicones (2) is the silicones of 1.54.
6. a kind of high power UV ultraviolet source according to claim 1, is characterized in that: described UV-LED chip (10) employing refractive index is the sapphire attachment of 1.76.
7. a kind of high power UV ultraviolet source according to claim 1, it is characterized in that: described arc support (12) semicircular in shape, it comprises the arc connector (121) of two semicircles, described arc connector (121) is connected on base (123) by straight shape support (124), described base (123) is provided with boss (122).
8. a kind of high power UV ultraviolet source according to claim 7, is characterized in that: (122) are placed with the ink be cured to described boss.
9. a kind of high power UV ultraviolet source according to claim 7, it is characterized in that: (121) are provided with groove to described arc connector, described UV-LED module is bar shaped, the one end being joined with bolts UV-LED module is made at each groove, the width of described groove is consistent with the width of UV-LED module, and the described UV-LED module other end is fixed on boss (122).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520515875.5U CN204834688U (en) | 2015-07-16 | 2015-07-16 | High power UV uv light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520515875.5U CN204834688U (en) | 2015-07-16 | 2015-07-16 | High power UV uv light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204834688U true CN204834688U (en) | 2015-12-02 |
Family
ID=54692252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520515875.5U Active CN204834688U (en) | 2015-07-16 | 2015-07-16 | High power UV uv light source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204834688U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146788A (en) * | 2017-05-22 | 2017-09-08 | 华中科技大学鄂州工业技术研究院 | A kind of high-power deep ultraviolet LED/light source module and preparation method thereof |
| CN108321287A (en) * | 2018-03-16 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of deep ultraviolet LED lamp bead inorganic encapsulated structure |
| CN110786817A (en) * | 2019-11-13 | 2020-02-14 | 山西医科大学 | Two-waveband optical molecular image light source device based on LED efficient refrigeration |
| CN113161469A (en) * | 2021-03-23 | 2021-07-23 | 聿耒科技(天津)有限公司 | Tubular packaging-free ultraviolet LED light source module and processing method |
-
2015
- 2015-07-16 CN CN201520515875.5U patent/CN204834688U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146788A (en) * | 2017-05-22 | 2017-09-08 | 华中科技大学鄂州工业技术研究院 | A kind of high-power deep ultraviolet LED/light source module and preparation method thereof |
| CN108321287A (en) * | 2018-03-16 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of deep ultraviolet LED lamp bead inorganic encapsulated structure |
| CN110786817A (en) * | 2019-11-13 | 2020-02-14 | 山西医科大学 | Two-waveband optical molecular image light source device based on LED efficient refrigeration |
| CN113161469A (en) * | 2021-03-23 | 2021-07-23 | 聿耒科技(天津)有限公司 | Tubular packaging-free ultraviolet LED light source module and processing method |
| CN113161469B (en) * | 2021-03-23 | 2023-12-01 | 聿耒科技(天津)有限公司 | Tubular packaging-free ultraviolet LED light source module and processing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204834688U (en) | High power UV uv light source | |
| CN102903710A (en) | High-light-power-density ultraviolet ray LED (Light-emitting Diode) curing light source and preparation method thereof | |
| CN202013883U (en) | High-power LED (Light Emitting Diode) module sealing structure | |
| CN102364710A (en) | Light emitting diode (LED) white light source device | |
| CN102410504B (en) | Large-heat-radiation-surface LED lighting device and manufacture method thereof | |
| CN202423289U (en) | Light emitting diode (LED) light emitting module | |
| CN203026552U (en) | LED (lighting emitted diode) component bracket | |
| CN106229311B (en) | A kind of production technology of LED light emitting diode | |
| CN204271135U (en) | The light source module that photoelectric conversion efficiency is high | |
| CN102569284B (en) | The LED that New LED luminescence chip and assembling thereof are formed | |
| CN203589024U (en) | High-power UVLED vertical chip integration module | |
| CN203367274U (en) | LED packaging structure | |
| CN203800073U (en) | COB light source composite aluminum substrate support | |
| CN203423214U (en) | Light emitting diode packaging structure and light emitting diode tube | |
| CN204005422U (en) | A kind of liquid cooling lamp | |
| CN205231044U (en) | Integrative high -power encapsulation module of UVLED of forced -air cooling heat dissipation | |
| CN203553164U (en) | High color rendering led filament | |
| CN202549839U (en) | Novel LED (Light-Emitting Diode) light-emitting chip and LED lamp formed by assembling same | |
| CN202302944U (en) | COB (chip on board) encapsulating lamp strip module for LED (light-emitting diode) surface light source | |
| CN202395031U (en) | High-power LED support structure | |
| CN201434236Y (en) | Fixture formed by light-emitting diodes | |
| CN205919161U (en) | Adopt de -electrification source photovoltaic module of no gold thread white light LED chip of high pressure | |
| CN202452143U (en) | 15-string and eight-parallel-branch light emitting diode (LED) chip integrated surface light source | |
| CN202452142U (en) | Eight-string and ten-parallel-branch light emitting diode (LED) chip integrated surface light source | |
| CN203489208U (en) | Led water cooling device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |