CN106229311B - A kind of production technology of LED light emitting diode - Google Patents
A kind of production technology of LED light emitting diode Download PDFInfo
- Publication number
- CN106229311B CN106229311B CN201610692082.XA CN201610692082A CN106229311B CN 106229311 B CN106229311 B CN 106229311B CN 201610692082 A CN201610692082 A CN 201610692082A CN 106229311 B CN106229311 B CN 106229311B
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- Prior art keywords
- emitting diode
- light
- substrate
- backlight unit
- led
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Abstract
The invention discloses a kind of production technologies of LED light emitting diode, and LED wafer is placed in the substrate of groove shapes, conducting resinl is applied on substrate；LED wafer is cut into several light-emitting diode chip for backlight unit being separated from each other, and forms a gap between adjacent light-emitting diode chip for backlight unit, is put into insulating layer in the gap between adjacent light-emitting diode chip for backlight unit；On the led chips by the covering of the first glue-line, the substrate that the second glue-line fills up groove shapes is placed into；There is heat sink between light-emitting diode chip for backlight unit and substrate, has several heat dissipation channels on heat sink, and heat dissipation channel is connected with the radiator in substrate.There is insulating layer between light-emitting diode chip for backlight unit of the present invention, prevents short circuit；With radiator, increase the service life of light emitting diode, and radiator is arranged in substrate, saves space and resource.
Description
Technical field
The present invention relates to a kind of diode production techniques, and in particular to a kind of production technology of LED light emitting diode.
Background technique
LED source is as a kind of emerging third generation light source, because it is with long working life, energy-saving and environmental protection etc.
Advantage, and generally had an optimistic view of by market.Moreover, the illuminating module being made of at present light emitting diode can generate high-power, high brightness
Light source.Therefore it will widely, revolutionaryly replace the existing light source such as traditional incandescent lamp, become and meet energy conservation and environmental protection theme
Principal light source.However, being that LED wafer is first cut into several light-emitting diodes mostly when manufacturing light emitting diode
Then several LED wafer monomers are placed on bottom plate by pipe chip monomer one by one, then use the side of single package
LED wafer monomer is packaged into light emitting diode by formula, but this packaging method production efficiency is low, is difficult to realize big rule
The automated production of mould is unfavorable for reducing cost, largely hinders the universal of light emitting diode.
Under normal circumstances, it is 0.2 ~ 0.3nm/ DEG C that the emission wavelength of LED, which varies with temperature, and spectral width increases therewith, shadow
Ring bright-colored degree.In addition, heat generation loss makes interface generate temperature rise, near room temperature, temperature when forward current flows through pn-junction
Every to increase 1 DEG C, the luminous intensity of LED can correspondingly reduce 1% or so, package cooling；When keep excitation purity and luminous intensity it is non-
It is often important, the method for reducing its driving current is mostly used in the past, reduces junction temperature, and the driving current of most LED is limited in the left side 20mA
It is right.But the light output of LED can increase with the increase of electric current, currently, the driving current of many power-type LEDs can achieve
Even 1A grades of 70mA, 100mA, need to improve encapsulating structure, completely new LED encapsulation design concept and low thermal resistance encapsulating structure and skill
Art improves thermal characteristics.For example, selecting the elargol of good heat conductivity using large-area chips inverted structure, increasing metallic support
Surface area, the silicon carrier of solder bump are directly installed in heat sink the methods of upper.In addition, in application design, the heat of PCB circuit board etc.
Design, heating conduction are also particularly significant.
Into after 21 century, high efficiency, the super brightness of LED continue to develop innovation, LED chip and encapsulation no longer edge
The design concept and manufacture production model of Gong Chuantong, in terms of the light output for increasing chip, research and development are not limited only to change material
Interior amount of impurities, lattice defect and dislocation improve internal efficiency, meanwhile, how to improve tube core and encapsulation internal structure, enhancing
The probability that photon outgoing is generated inside LED, improves light efficiency, solves heat dissipation, and light and heat is taken sink optimization design, improvement optical property,
Accelerating surface mount SMD process is even more the main flow direction of industrial circle research and development.
Summary of the invention
The technical problem to be solved by the present invention is to conventional light emitting diodes service life is short, the easy problem of short circuit, purpose
It is to provide a kind of production technology of LED light emitting diode, advanced optimizes the production technology of light emitting diode, improves performance.
The present invention is achieved through the following technical solutions:
A kind of production technology of LED light emitting diode, comprising the following steps:
(1) LED wafer is placed in the substrate of groove shapes, conducting resinl is applied on substrate；
(2) LED wafer is cut into several light-emitting diode chip for backlight unit being separated from each other, and adjacent shone
A gap is formed between diode chip for backlight unit, is put into insulating layer in the gap between adjacent light-emitting diode chip for backlight unit；
(3) on the led chips by the covering of the first glue-line, the substrate that the second glue-line fills up groove shapes is placed into；
(4) there is heat sink between light-emitting diode chip for backlight unit and substrate, there is several heat dissipation channels on heat sink, and
Heat dissipation channel is connected with the radiator in substrate.
The gold-plated diode wafer of diffusion, pickling, sintering, nickel plating will be had already passed through and be put into the base that groove surfaces have conducting resinl
On plate, LED wafer is cut into several light-emitting diode chip for backlight unit being separated from each other, and adjacent light emitting diode
A gap is formed between chip, and insulating layer, insulating layer partition are put into the gap between adjacent light-emitting diode chip for backlight unit
Conducting resinl between adjacent light-emitting diode chip for backlight unit prevents the conducting particles in conducting resinl from run because being squeezed to adjacent hair
In gap between luminous diode chip, so that can be because conducting particles contacts with each other between the adjacent light-emitting diode chip for backlight unit
And it is connected, and then generate short circuit.There is heat sink between light-emitting diode chip for backlight unit and substrate, there is several heat dissipations on heat sink
Channel, and heat dissipation channel is connected with the radiator in substrate.
Further, in powerful diode of giving out light, a large amount of heat, common two pole can be generated when passing through high current
The heat dissipation performance of pipe is very poor, substantially reduces the service life of diode.Heat sink increases position on the downside of light-emitting diode chip for backlight unit
The heat dissipation performance set, while heat release hole also increases the heat dissipation area of light-emitting diode chip for backlight unit, also, heat dissipation is arranged in substrate
Device also saves raw material and spatial area.
A kind of production technology of LED light emitting diode, the conducting resinl in the step (1) be epoxy adhesive and
Conducting particles.
A kind of production technology of LED light emitting diode, the first glue-line in the step (3) are fluorescent powder, high light transmittance
Silica gel, epoxy resin it is one or more.
A kind of production technology of LED light emitting diode, the second glue-line in the step (3) be high light transmittance silica gel or
One of epoxy resin is a variety of.
A kind of production technology of LED light emitting diode has cooling fin in the radiator in the step (4).
Wherein, epoxy resin adhesive, because its performance is more comprehensive, using than wide, so being referred to as " omnipotent
Glue " occupies very important effect in synthetic adhesive, is the outstanding person in adhesive, possesses many excellent characteristics, such as
Viscous glutinous intensity is high, and resistant to chemical media, preparation method is simple, and use temperature range is wide, and ageing-resistant performance is good, and toxic dosage is few, environment
It pollutes few etc..Epoxy resin adhesive all has extraordinary viscous glutinous effect to the kind material of many different attributes.In addition to this,
Epoxy resin adhesive can be rated as performance highest, the most abundant adhesive of function there are also the functions such as sealing, insulation, wear-resisting, reinforcing.
It may be said that can find the trace of epoxy resin adhesive in modern industry and daily life.
Further, conducting resinl passes through usually using matrix resin and conductive filler, that is, conducting particles as main constituents
The bonding effect of matrix resin is combined together conducting particles, forms conductive path, realizes the conductive connection for being glued material.By
It is a kind of adhesive in the matrix resin of conducting resinl, can choose suitable solidification temperature and be bonded.
Fluorescent powder is generally divided into two class of photo-induced energy storage luminescent powder and luminescent powder with radionuclide.Photo-induced energy storage luminescent powder
It is fluorescent powder after by the irradiation such as natural light, daylight light, ultraviolet light, luminous energy is stored, after stopping light irradiation, then
It slowly releases in a manner of fluorescence, so at night or dark, remains to see luminous, the duration is up to several small
Up to ten a few houres.
Silica gel is a kind of high activity adsorbent material, belongs to amorphous substance.Not soluble in water and any solvent, it is non-toxic and tasteless, change
It learns property to stablize, not react with any substance in addition to highly basic, hydrofluoric acid.The silica gel of various models is because of its manufacturing method difference
And form different microcellular structures.The chemical composition and physical structure of silica gel determine that it has many other same type of material difficult
To replace to obtain feature: absorption property is high, thermal stability is good, chemical property is stable, has higher mechanical strength etc..
The epoxy resin of top encapsulating is shaped, and has effects several in this way: tube core etc. being protected not corroded by the external world；
It takes different shapes and controls the angle of divergence of light with material properties (mixing or do not mix color dispersing agent), lens or diffusing lens function；
Tube core refractive index is related to air refraction too big, causes the cirtical angle of total reflection very little of die internal, what active layer generated
Light only has fraction to be removed, most of to be easily absorbed in die internal through multiple reflections, and total reflection, which easily occurs, to be caused excessively
Light loss selects the epoxy resin of respective indices of refraction to make transition, improves the light emission efficiency of tube core.As the epoxy for constituting shell
Resin must have moisture-proof, insulating properties, and mechanical strength issues the refractive index and transmissivity height of light to tube core.Select different refractions
The encapsulating material of rate, influence of the package geometry to photon evolution efficiency are different, the distribution of the angle of luminous intensity also with pipe
Cored structure, optical output mode, material is related with shape used in package lens.According to pointed resin lens, light can be made to focus on
The axis direction of LED, corresponding visual angle are smaller；If the resin lens at top are round or plane, corresponding visual angle will increase
Greatly.
Cooling fin is a kind of device that the easy heat-generating electronic elements in electric appliance radiate, mostly by aluminium alloy, brass or bronze
It is made into plate, sheet, splintery etc..Common cooling fin material is copper and aluminium alloy, and the two respectively has its advantage and disadvantage.Copper it is thermally conductive
Property is good, but price is more expensive, and difficulty of processing is higher, and weight is excessive, and thermal capacity is smaller, and easy to oxidize.And fine aluminium is too soft, it cannot
Directly use.
Compared with prior art, the present invention having the following advantages and benefits:
1, a kind of production technology of LED light emitting diode of the present invention has insulating layer between light-emitting diode chip for backlight unit, prevents short
Road.
2, a kind of production technology of LED light emitting diode of the present invention has radiator, increases the use of light emitting diode
Service life.
3, a kind of production technology of LED light emitting diode of the present invention, radiator are arranged in substrate, save space and money
Source.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is present invention process figure.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation for explaining only the invention, are not made
For limitation of the invention.
Embodiment
As shown in Figure 1, a kind of production technology of LED light emitting diode of the present invention, comprising the following steps:
(1) LED wafer is placed in the substrate of groove shapes, on substrate apply by epoxy adhesive with
And the molecular conducting resinl of conductive particle；
(2) LED wafer is cut into several light-emitting diode chip for backlight unit being separated from each other, and adjacent shone
A gap is formed between diode chip for backlight unit, is put into insulating layer in the gap between adjacent light-emitting diode chip for backlight unit；
(3) on the led chips by the covering of the first glue-line, the substrate that the second glue-line fills up groove shapes is placed into；
(4) there is heat sink between light-emitting diode chip for backlight unit and substrate, there is several heat dissipation channels on heat sink, and
Heat dissipation channel is connected with the radiator in substrate.And there is cooling fin in radiator.
First glue-line is the mixture of fluorescent powder, the silica gel of high light transmittance and epoxy resin composition.
Second glue-line is the silica gel of high light transmittance and the mixture of epoxy resin composition.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (4)
1. a kind of production technology of LED light emitting diode, which comprises the following steps:
(1) LED wafer is placed in the substrate of groove shapes, conducting resinl is applied on substrate；
(2) LED wafer is cut into several light-emitting diode chip for backlight unit being separated from each other, and adjacent light-emitting diodes
A gap is formed between tube chip, is put into insulating layer in the gap between adjacent light-emitting diode chip for backlight unit；
(3) on the led chips by the covering of the first glue-line, the substrate that the second glue-line fills up groove shapes is placed into；
(4) there is heat sink between light-emitting diode chip for backlight unit and substrate, have several heat dissipation channels on heat sink, and radiate
Channel is connected with the radiator in substrate, and light-emitting diode chip for backlight unit is radiated by heat dissipation channel.
2. a kind of production technology of LED light emitting diode according to claim 1, which is characterized in that in the step (1)
Conducting resinl be epoxy adhesive and conducting particles.
3. a kind of production technology of LED light emitting diode according to claim 1, which is characterized in that in the step (3)
The second glue-line be high light transmittance silica gel or one of epoxy resin or a variety of.
4. a kind of production technology of LED light emitting diode according to claim 1, which is characterized in that in the step (4)
Radiator in have cooling fin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610692082.XA CN106229311B (en) | 2016-08-22 | 2016-08-22 | A kind of production technology of LED light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610692082.XA CN106229311B (en) | 2016-08-22 | 2016-08-22 | A kind of production technology of LED light emitting diode |
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| Publication Number | Publication Date |
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| CN106229311A CN106229311A (en) | 2016-12-14 |
| CN106229311B true CN106229311B (en) | 2019-06-07 |
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| CN201610692082.XA Active CN106229311B (en) | 2016-08-22 | 2016-08-22 | A kind of production technology of LED light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107911951A (en) * | 2017-11-22 | 2018-04-13 | 田国辉 | A kind of luminescent wafer fixes the method for packing of pcb board |
| CN112017550B (en) * | 2019-05-31 | 2022-06-03 | 成都辰显光电有限公司 | Display panel, manufacturing method thereof and display device |
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| CN201081166Y (en) * | 2007-07-17 | 2008-07-02 | 华刚光电（上海）有限公司 | Multiple-channel heat radiating high power LED device |
| CN101436637A (en) * | 2008-12-16 | 2009-05-20 | 王海军 | High-efficiency heat-dissipating luminous high-power LED packaging structure |
| CN101482230A (en) * | 2006-11-13 | 2009-07-15 | 弘元科技有限公司 | Structure with bearing substrate and manufacturing method thereof |
| CN102130111A (en) * | 2010-12-24 | 2011-07-20 | 郑伟 | Liquid-packaged high-power LED (light-emitting diode) device and packaging method of LED device |
| CN204118067U (en) * | 2014-07-25 | 2015-01-21 | 王伟奉 | Directly be packaged in the LED chip encapsulation architecture of radiator |
| CN204303868U (en) * | 2015-01-05 | 2015-04-29 | 福建天电光电有限公司 | Improve the light emitting semiconductor device of heat radiation and three-dimensional LED light source |
-
2016
- 2016-08-22 CN CN201610692082.XA patent/CN106229311B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101482230A (en) * | 2006-11-13 | 2009-07-15 | 弘元科技有限公司 | Structure with bearing substrate and manufacturing method thereof |
| CN201081166Y (en) * | 2007-07-17 | 2008-07-02 | 华刚光电（上海）有限公司 | Multiple-channel heat radiating high power LED device |
| CN101436637A (en) * | 2008-12-16 | 2009-05-20 | 王海军 | High-efficiency heat-dissipating luminous high-power LED packaging structure |
| CN102130111A (en) * | 2010-12-24 | 2011-07-20 | 郑伟 | Liquid-packaged high-power LED (light-emitting diode) device and packaging method of LED device |
| CN204118067U (en) * | 2014-07-25 | 2015-01-21 | 王伟奉 | Directly be packaged in the LED chip encapsulation architecture of radiator |
| CN204303868U (en) * | 2015-01-05 | 2015-04-29 | 福建天电光电有限公司 | Improve the light emitting semiconductor device of heat radiation and three-dimensional LED light source |
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| CN106229311A (en) | 2016-12-14 |
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