CN106229311A - A kind of production technology of LED light emitting diode - Google Patents
A kind of production technology of LED light emitting diode Download PDFInfo
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Abstract
本发明公开了一种LED发光二极管的生产工艺，将发光二极管晶片放在凹槽形状的基板中，在基板上涂导电胶；将发光二极管晶片切割成若干相互分离的发光二极管芯片，并且相邻的发光二极管芯片之间形成一个间隙，在相邻的发光二极管芯片之间的间隙内放入绝缘层；将第一胶层覆盖在发光二极管芯片上，再放入第二胶层填满凹槽形状的基板；在发光二极管芯片与基板之间有散热板，在散热板上有若干的散热通道，并且散热通道与基板内的散热装置相连。本发明发光二极管芯片之间有绝缘层，防止短路；具有散热装置，增加发光二极管的使用寿命，并且散热装置设置在基板内，节约空间与资源。
The invention discloses a production process of LED light-emitting diodes. The light-emitting diode chip is placed in a groove-shaped substrate, and conductive glue is coated on the substrate; the light-emitting diode chip is cut into several light-emitting diode chips separated from each other, and adjacent A gap is formed between the LED chips, and an insulating layer is placed in the gap between adjacent LED chips; the first adhesive layer is covered on the LED chip, and then the second adhesive layer is placed to fill the groove The shape of the substrate; there is a heat dissipation plate between the light-emitting diode chip and the substrate, and there are several heat dissipation channels on the heat dissipation plate, and the heat dissipation channels are connected with the heat dissipation device in the substrate. The invention has an insulating layer between the chips of the light-emitting diode to prevent short circuit; it has a heat dissipation device to increase the service life of the light-emitting diode, and the heat dissipation device is arranged in the substrate to save space and resources.
Description
技术领域technical field
本发明涉及一种二极管生产工艺，具体涉及一种LED发光二极管的生产工艺。The invention relates to a diode production process, in particular to a LED light-emitting diode production process.
背景技术Background technique
发光二极管光源作为一种新兴的第三代光源，因其具有工作寿命长、节能、环保等优点，而普遍被市场看好。而且，目前由发光二极管组成的发光模组能产生大功率、高亮度的光源。因此将广泛地、革命性地取代传统的白织灯等现有的光源，成为符合节能环保主题的主要光源。然而，在制造发光二极管时，大多是先将发光二极管晶片切割为若干发光二极管晶片单体，然后将该若干发光二极管晶片单体逐一放置于底板上，再采用单个封装的方式将发光二极管晶片单体封装成发光二极管，但这种封装方法生产效率低，很难实现大规模的自动化生产，不利于降低成本，很大程度上阻碍了发光二极管的普及。As an emerging third-generation light source, light-emitting diode light source is generally favored by the market because of its advantages such as long working life, energy saving, and environmental protection. Moreover, the current light-emitting modules composed of light-emitting diodes can produce high-power, high-brightness light sources. Therefore, it will widely and revolutionaryly replace existing light sources such as traditional white woven lamps, and become the main light source in line with the theme of energy conservation and environmental protection. However, when manufacturing light-emitting diodes, most of the light-emitting diode chips are first cut into several light-emitting diode chip monomers, and then the plurality of light-emitting diode chip monomers are placed on the base plate one by one, and then the light-emitting diode chips are individually packaged. Body packaging into light-emitting diodes, but this packaging method has low production efficiency, it is difficult to achieve large-scale automated production, which is not conducive to reducing costs, and largely hinders the popularization of light-emitting diodes.
一般情况下，LED的发光波长随温度变化为0.2~0.3nm/℃，光谱宽度随之增加，影响颜色鲜艳度。另外，当正向电流流经pn结，发热性损耗使结区产生温升，在室温附近，温度每升高1℃，LED的发光强度会相应地减少1％左右，封装散热；时保持色纯度与发光强度非常重要，以往多采用减少其驱动电流的办法，降低结温，多数LED的驱动电流限制在20mA左右。但是，LED的光输出会随电流的增大而增加，目前，很多功率型LED的驱动电流可以达到70mA、100mA甚至1A级，需要改进封装结构，全新的LED封装设计理念和低热阻封装结构及技术，改善热特性。例如，采用大面积芯片倒装结构，选用导热性能好的银胶，增大金属支架的表面积，焊料凸点的硅载体直接装在热沉上等方法。此外，在应用设计中，PCB线路板等的热设计、导热性能也十分重要。In general, the luminous wavelength of LED varies with temperature by 0.2~0.3nm/℃, and the spectral width increases accordingly, which affects the color vividness. In addition, when the forward current flows through the pn junction, the exothermic loss will cause a temperature rise in the junction area. At room temperature, every time the temperature rises by 1 °C, the luminous intensity of the LED will decrease by about 1%, and the package will dissipate heat; while maintaining the color Purity and luminous intensity are very important. In the past, the method of reducing its driving current was often used to reduce the junction temperature. The driving current of most LEDs is limited to about 20mA. However, the light output of LED will increase with the increase of current. At present, the driving current of many power LEDs can reach 70mA, 100mA or even 1A level. It needs to improve the packaging structure, new LED packaging design concept and low thermal resistance packaging structure and technology to improve thermal characteristics. For example, a large-area chip flip-chip structure is adopted, silver glue with good thermal conductivity is selected, the surface area of the metal bracket is increased, and the silicon carrier of the solder bump is directly mounted on the heat sink. In addition, in the application design, the thermal design and thermal conductivity of PCB circuit boards are also very important.
进入21世纪后，LED的高效化、超高亮度化，不断发展创新，LED芯片和封装不再沿龚传统的设计理念与制造生产模式，在增加芯片的光输出方面，研发不仅仅限于改变材料内杂质数量，晶格缺陷和位错来提高内部效率，同时，如何改善管芯及封装内部结构，增强LED内部产生光子出射的几率，提高光效，解决散热，取光和热沉优化设计，改进光学性能，加速表面贴装化SMD进程更是产业界研发的主流方向。After entering the 21st century, the high efficiency and ultra-high brightness of LEDs are constantly developing and innovating. LED chips and packages no longer follow the traditional design concept and manufacturing production mode. In terms of increasing the light output of chips, research and development is not limited to changing materials. The number of internal impurities, lattice defects and dislocations are used to improve internal efficiency. At the same time, how to improve the internal structure of the die and package, enhance the probability of photon emission inside the LED, improve light efficiency, solve heat dissipation, optimize the design of light extraction and heat sink, Improving optical performance and accelerating the process of surface mount SMD is the mainstream direction of research and development in the industry.
发明内容Contents of the invention
本发明所要解决的技术问题是传统发光二极管使用寿命短，易短路的问题，目的在于提供一种LED发光二极管的生产工艺，进一步优化发光二极管的生产工艺，提高性能。The technical problem to be solved by the present invention is the problem of short service life and easy short circuit of traditional light-emitting diodes. The purpose is to provide a production process of LED light-emitting diodes, further optimize the production process of light-emitting diodes, and improve performance.
本发明通过下述技术方案实现：The present invention realizes through following technical scheme:
一种LED发光二极管的生产工艺，包括以下步骤：A production process of LED light-emitting diodes, comprising the following steps:
（1）将发光二极管晶片放在凹槽形状的基板中，在基板上涂导电胶；(1) Put the light-emitting diode chip in the groove-shaped substrate, and coat the conductive glue on the substrate;
（2）将发光二极管晶片切割成若干相互分离的发光二极管芯片，并且相邻的发光二极管芯片之间形成一个间隙，在相邻的发光二极管芯片之间的间隙内放入绝缘层；(2) Cutting the LED wafer into several separated LED chips, and forming a gap between adjacent LED chips, and placing an insulating layer in the gap between adjacent LED chips;
（3）将第一胶层覆盖在发光二极管芯片上，再放入第二胶层填满凹槽形状的基板；(3) Cover the first adhesive layer on the light-emitting diode chip, and then put the second adhesive layer to fill the groove-shaped substrate;
（4）在发光二极管芯片与基板之间有散热板，在散热板上有若干的散热通道，并且散热通道与基板内的散热装置相连。(4) There is a heat dissipation plate between the light-emitting diode chip and the substrate, and there are several heat dissipation channels on the heat dissipation plate, and the heat dissipation channels are connected with the heat dissipation device in the substrate.
将已经经过扩散、酸洗、烧结、镀镍镀金的二极管晶片放入凹槽表面有导电胶的基板上，将发光二极管晶片切割成若干相互分离的发光二极管芯片，并且相邻的发光二极管芯片之间形成一个间隙，在相邻的发光二极管芯片之间的间隙内放入绝缘层，绝缘层隔断相邻的发光二极管芯片之间的导电胶，防止导电胶中的导电粒子因受挤压而跑至相邻的发光二极管芯片之间的间隙中，使得该相邻的发光二极管芯片之间会因为导电粒子相互接触而导通，进而产生短路。在发光二极管芯片与基板之间有散热板，在散热板上有若干的散热通道，并且散热通道与基板内的散热装置相连。Put the diode wafer that has been diffused, pickled, sintered, nickel-plated and gold-plated on the substrate with conductive glue on the surface of the groove, cut the LED wafer into several separate LED chips, and the adjacent LED chips A gap is formed between the adjacent LED chips, and an insulating layer is placed in the gap between the adjacent LED chips. The insulating layer separates the conductive glue between the adjacent LED chips, preventing the conductive particles in the conductive glue from running away due to extrusion. into the gap between adjacent light emitting diode chips, so that the adjacent light emitting diode chips will be conducted due to the mutual contact of conductive particles, thereby generating a short circuit. There is a heat dissipation plate between the light-emitting diode chip and the substrate, and several heat dissipation channels are arranged on the heat dissipation plate, and the heat dissipation channels are connected with the heat dissipation device in the substrate.
进一步的，在大功率的放光二极管中，通过高电流时会产生大量的热量，普通二极管的散热性能很差，大大缩短了二极管的使用寿命。散热板增大了发光二极管芯片下侧位置的散热性能，同时散热孔也增加了发光二极管芯片的散热面积，并且，在基板内设置散热装置也节约了原料与空间面积。Furthermore, in a high-power light-emitting diode, a large amount of heat will be generated when passing a high current, and the heat dissipation performance of an ordinary diode is very poor, which greatly shortens the service life of the diode. The heat dissipation plate increases the heat dissipation performance of the lower side of the LED chip, and the heat dissipation hole also increases the heat dissipation area of the LED chip, and the heat dissipation device arranged in the substrate also saves raw materials and space area.
一种LED发光二极管的生产工艺，所述步骤（1）中的导电胶为环氧树脂粘着剂以及导电粒子。A production process of LED light-emitting diodes, the conductive glue in the step (1) is an epoxy resin adhesive and conductive particles.
一种LED发光二极管的生产工艺，所述步骤（3）中的第一胶层为荧光粉、高透光性的硅胶、环氧树脂的一种或多种。A production process of LED light-emitting diodes, the first adhesive layer in the step (3) is one or more of fluorescent powder, high light-transmitting silica gel, and epoxy resin.
一种LED发光二极管的生产工艺，所述步骤（3）中的第二胶层为高透光性的硅胶或环氧树脂中的一种或多种。A production process of LED light-emitting diodes, the second glue layer in the step (3) is one or more of high light-transmitting silica gel or epoxy resin.
一种LED发光二极管的生产工艺，所述步骤（4）中的散热装置内有散热片。A production process of LED light-emitting diodes, the heat dissipation device in the step (4) has heat dissipation fins inside.
其中，环氧树脂胶黏剂，因为它性能比较全面，应用比较广泛，所以被称为“万能胶”，在合成胶黏剂中占有非常重要的作用，是胶黏剂中的佼佼者，拥有很多优良的特性，如粘黏强度高，耐化学介质，配制方法简单，使用温度范围广，耐老化性能好，毒害量少，环境污染少等。环氧树脂胶黏剂对很多不同属性的种材料都具有非常好的粘黏效果。除此之外，环氧树脂胶黏剂还有密封、绝缘、耐磨、加固等功能，堪称性能最高，功能最丰富的胶黏剂。可以说在现代工业和日常生活中都能发现环氧树脂胶黏剂的痕迹。Among them, epoxy resin adhesive is called "universal adhesive" because of its comprehensive performance and wide application. It plays a very important role in synthetic adhesives and is the best among adhesives. Many excellent properties, such as high adhesive strength, chemical resistance, simple preparation method, wide temperature range, good aging resistance, less toxic amount, less environmental pollution, etc. Epoxy adhesives have very good adhesion to many materials with different properties. In addition, epoxy resin adhesives also have functions such as sealing, insulation, wear resistance, and reinforcement, which can be called the adhesive with the highest performance and the most abundant functions. It can be said that traces of epoxy resin adhesives can be found in modern industry and daily life.
进一步的，导电胶通常以基体树脂和导电填料即导电粒子为主要组成成分，通过基体树脂的粘接作用把导电粒子结合在一起，形成导电通路，实现被粘材料的导电连接。由于导电胶的基体树脂是一种胶黏剂，可以选择适宜的固化温度进行粘接。Furthermore, the conductive adhesive usually has a matrix resin and conductive fillers, namely conductive particles, as the main components. The conductive particles are combined through the bonding effect of the matrix resin to form a conductive path and realize the conductive connection of the adhered materials. Since the matrix resin of the conductive adhesive is an adhesive, an appropriate curing temperature can be selected for bonding.
荧光粉，通常分为光致储能夜光粉和带有放射性的夜光粉两类。光致储能夜光粉是荧光粉在受到自然光、日光灯光、紫外光等照射后，把光能储存起来，在停止光照射后，再缓慢地以荧光的方式释放出来，所以在夜间或者黑暗处，仍能看到发光，持续时间长达几小时至十几小时。Phosphor powder is usually divided into two types: photoluminescent energy storage luminous powder and radioactive luminous powder. Photo-energy storage luminous powder is a fluorescent powder that stores light energy after being irradiated by natural light, daylight, ultraviolet light, etc., and then slowly releases it in the form of fluorescence after stopping the light irradiation, so it can be used at night or in dark places. , can still see the luminescence, which lasts for several hours to more than ten hours.
硅胶是一种高活性吸附材料，属非晶态物质。不溶于水和任何溶剂，无毒无味，化学性质稳定，除强碱、氢氟酸外不与任何物质发生反应。各种型号的硅胶因其制造方法不同而形成不同的微孔结构。硅胶的化学组份和物理结构，决定了它具有许多其他同类材料难以取代得特点：吸附性能高、热稳定性好、化学性质稳定、有较高的机械强度等。Silica gel is a highly active adsorption material, which is an amorphous substance. Insoluble in water and any solvent, non-toxic and tasteless, stable in chemical properties, and does not react with any substance except strong alkali and hydrofluoric acid. Various types of silica gel form different microporous structures due to their different manufacturing methods. The chemical composition and physical structure of silica gel determine that it has many characteristics that other similar materials cannot replace: high adsorption performance, good thermal stability, stable chemical properties, and high mechanical strength.
顶部包封的环氧树脂做成一定形状，有这样几种作用：保护管芯等不受外界侵蚀；采用不同的形状和材料性质(掺或不掺散色剂)，起透镜或漫射透镜功能，控制光的发散角；管芯折射率与空气折射率相关太大，致使管芯内部的全反射临界角很小，其有源层产生的光只有小部分被取出，大部分易在管芯内部经多次反射而被吸收，易发生全反射导致过多光损失，选用相应折射率的环氧树脂作过渡，提高管芯的光出射效率。用作构成管壳的环氧树脂须具有耐湿性，绝缘性，机械强度，对管芯发出光的折射率和透射率高。选择不同折射率的封装材料，封装几何形状对光子逸出效率的影响是不同的，发光强度的角分布也与管芯结构、光输出方式、封装透镜所用材质和形状有关。若采用尖形树脂透镜，可使光集中到LED的轴线方向，相应的视角较小；如果顶部的树脂透镜为圆形或平面型，其相应视角将增大。The top-encapsulated epoxy resin is made into a certain shape, which has several functions: to protect the die from external erosion; to use different shapes and material properties (with or without dispersing agent), to act as a lens or a diffuse lens function, to control the divergence angle of light; the refractive index of the tube core is too related to the refractive index of air, so that the critical angle of total reflection inside the tube core is very small, and only a small part of the light generated by the active layer is taken out, and most of it is easy to pass through the tube The interior of the core is absorbed by multiple reflections, and total reflection is prone to cause excessive light loss. The epoxy resin with the corresponding refractive index is selected as the transition to improve the light output efficiency of the core. The epoxy resin used to form the shell must have moisture resistance, insulation, mechanical strength, high refractive index and transmittance to the light emitted by the die. Choosing packaging materials with different refractive indices, the impact of packaging geometry on photon escape efficiency is different, and the angular distribution of luminous intensity is also related to the die structure, light output mode, and the material and shape of the packaging lens. If a pointed resin lens is used, the light can be concentrated to the axial direction of the LED, and the corresponding viewing angle will be smaller; if the top resin lens is circular or flat, the corresponding viewing angle will be increased.
散热片是一种给电器中的易发热电子元件散热的装置，多由铝合金，黄铜或青铜做成板状，片状，多片状等。常用的散热片材质是铜和铝合金，二者各有其优缺点。铜的导热性好，但价格较贵，加工难度较高，重量过大，热容量较小，而且容易氧化。而纯铝太软，不能直接使用。Heat sink is a device for dissipating heat from electronic components that are prone to heat in electrical appliances. It is mostly made of aluminum alloy, brass or bronze into plates, sheets, and multi-sheets. Commonly used heat sink materials are copper and aluminum alloy, both of which have their own advantages and disadvantages. Copper has good thermal conductivity, but it is more expensive, difficult to process, too heavy, has a small heat capacity, and is easy to oxidize. And pure aluminum is too soft to be used directly.
本发明与现有技术相比，具有如下的优点和有益效果：Compared with the prior art, the present invention has the following advantages and beneficial effects:
1、本发明一种LED发光二极管的生产工艺，发光二极管芯片之间有绝缘层，防止短路。1. A production process of LED light-emitting diodes according to the present invention. There is an insulating layer between the chips of the light-emitting diodes to prevent short circuits.
2、本发明一种LED发光二极管的生产工艺，具有散热装置，增加发光二极管的使用寿命。2. A production process of LED light-emitting diodes in the present invention has a cooling device to increase the service life of the light-emitting diodes.
3、本发明一种LED发光二极管的生产工艺，散热装置设置在基板内，节约空间与资源。3. In the production process of LED light-emitting diodes of the present invention, the heat dissipation device is arranged in the substrate, saving space and resources.
附图说明Description of drawings
此处所说明的附图用来提供对本发明实施例的进一步理解，构成本申请的一部分，并不构成对本发明实施例的限定。在附图中：The drawings described here are used to provide a further understanding of the embodiments of the present invention, constitute a part of the application, and do not limit the embodiments of the present invention. In the attached picture:
图1为本发明工艺图。Fig. 1 is process chart of the present invention.
具体实施方式detailed description
为使本发明的目的、技术方案和优点更加清楚明白，下面结合实施例和附图，对本发明作进一步的详细说明，本发明的示意性实施方式及其说明仅用于解释本发明，并不作为对本发明的限定。In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the examples and accompanying drawings. As a limitation of the present invention.
实施例Example
如图1所示，本发明一种LED发光二极管的生产工艺，包括以下步骤：As shown in Figure 1, a kind of production technology of LED light-emitting diode of the present invention comprises the following steps:
（1）将发光二极管晶片放在凹槽形状的基板中，在基板上涂由环氧树脂粘着剂以及导电粒子组成的导电胶；(1) Put the light-emitting diode chip in the groove-shaped substrate, and coat the conductive glue composed of epoxy resin adhesive and conductive particles on the substrate;
（2）将发光二极管晶片切割成若干相互分离的发光二极管芯片，并且相邻的发光二极管芯片之间形成一个间隙，在相邻的发光二极管芯片之间的间隙内放入绝缘层；(2) Cutting the LED wafer into several separated LED chips, and forming a gap between adjacent LED chips, and placing an insulating layer in the gap between adjacent LED chips;
（3）将第一胶层覆盖在发光二极管芯片上，再放入第二胶层填满凹槽形状的基板；(3) Cover the first adhesive layer on the light-emitting diode chip, and then put the second adhesive layer to fill the groove-shaped substrate;
（4）在发光二极管芯片与基板之间有散热板，在散热板上有若干的散热通道，并且散热通道与基板内的散热装置相连。并且散热装置中有散热片。(4) There is a heat dissipation plate between the light-emitting diode chip and the substrate, and there are several heat dissipation channels on the heat dissipation plate, and the heat dissipation channels are connected with the heat dissipation device in the substrate. And there are cooling fins in the cooling device.
所述第一胶层为荧光粉、高透光性的硅胶以及环氧树脂组成的混合物。The first adhesive layer is a mixture of fluorescent powder, high light-transmitting silica gel and epoxy resin.
所述第二胶层为高透光性的硅胶和环氧树脂组成的混合物。The second adhesive layer is a mixture of high light transmittance silica gel and epoxy resin.
以上所述的具体实施方式，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施方式而已，并不用于限定本发明的保护范围，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the scope of the present invention. Protection scope, within the spirit and principles of the present invention, any modification, equivalent replacement, improvement, etc., shall be included in the protection scope of the present invention.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107911951A (en) * | 2017-11-22 | 2018-04-13 | 田国辉 | A packaging method for fixing a light-emitting chip to a PCB board |
| CN112017550A (en) * | 2019-05-31 | 2020-12-01 | 云谷（固安）科技有限公司 | Display panel, manufacturing method thereof and display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201081166Y (en) * | 2007-07-17 | 2008-07-02 | 华刚光电（上海）有限公司 | Multiple-channel heat radiating high power LED device |
| CN101436637A (en) * | 2008-12-16 | 2009-05-20 | 王海军 | High-efficiency heat-dissipating luminous high-power LED packaging structure |
| CN101482230A (en) * | 2006-11-13 | 2009-07-15 | 弘元科技有限公司 | Structure with bearing substrate and manufacturing method thereof |
| CN102130111A (en) * | 2010-12-24 | 2011-07-20 | 郑伟 | Liquid-packaged high-power LED (light-emitting diode) device and packaging method of LED device |
| CN204118067U (en) * | 2014-07-25 | 2015-01-21 | 王伟奉 | Directly be packaged in the LED chip encapsulation architecture of radiator |
| CN204303868U (en) * | 2015-01-05 | 2015-04-29 | 福建天电光电有限公司 | Improve the light emitting semiconductor device of heat radiation and three-dimensional LED light source |
-
2016
- 2016-08-22 CN CN201610692082.XA patent/CN106229311B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101482230A (en) * | 2006-11-13 | 2009-07-15 | 弘元科技有限公司 | Structure with bearing substrate and manufacturing method thereof |
| CN201081166Y (en) * | 2007-07-17 | 2008-07-02 | 华刚光电（上海）有限公司 | Multiple-channel heat radiating high power LED device |
| CN101436637A (en) * | 2008-12-16 | 2009-05-20 | 王海军 | High-efficiency heat-dissipating luminous high-power LED packaging structure |
| CN102130111A (en) * | 2010-12-24 | 2011-07-20 | 郑伟 | Liquid-packaged high-power LED (light-emitting diode) device and packaging method of LED device |
| CN204118067U (en) * | 2014-07-25 | 2015-01-21 | 王伟奉 | Directly be packaged in the LED chip encapsulation architecture of radiator |
| CN204303868U (en) * | 2015-01-05 | 2015-04-29 | 福建天电光电有限公司 | Improve the light emitting semiconductor device of heat radiation and three-dimensional LED light source |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107911951A (en) * | 2017-11-22 | 2018-04-13 | 田国辉 | A packaging method for fixing a light-emitting chip to a PCB board |
| CN112017550A (en) * | 2019-05-31 | 2020-12-01 | 云谷（固安）科技有限公司 | Display panel, manufacturing method thereof and display device |
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