CN106229311A - A kind of production technology of LED light emitting diode - Google Patents
A kind of production technology of LED light emitting diode Download PDFInfo
- Publication number
- CN106229311A CN106229311A CN201610692082.XA CN201610692082A CN106229311A CN 106229311 A CN106229311 A CN 106229311A CN 201610692082 A CN201610692082 A CN 201610692082A CN 106229311 A CN106229311 A CN 106229311A
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- CN
- China
- Prior art keywords
- emitting diode
- light
- substrate
- led
- backlight unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Abstract
The invention discloses the production technology of a kind of LED light emitting diode, LED wafer is placed in the substrate of groove shapes, substrate is coated with conducting resinl；LED wafer is cut into some light-emitting diode chip for backlight unit being separated from each other, and between adjacent light-emitting diode chip for backlight unit, forms a gap, in the gap between adjacent light-emitting diode chip for backlight unit, put into insulating barrier；First glue-line is covered on the led chips, places into the second glue-line and fill up the substrate of groove shapes；Between light-emitting diode chip for backlight unit and substrate, there is heat sink, heat sink has some heat dissipation channels, and heat dissipation channel is connected with the heat abstractor in substrate.There is insulating barrier between light-emitting diode chip for backlight unit of the present invention, prevent short circuit；There is heat abstractor, increase the service life of light emitting diode, and heat abstractor is arranged in substrate, save space and resource.
Description
Technical field
The present invention relates to a kind of diode production technique, be specifically related to the production technology of a kind of LED light emitting diode.
Background technology
LED source is as a kind of emerging third generation light source, because it has long working life, energy-saving and environmental protection etc.
Advantage, and generally had an optimistic view of by market.And, the illuminating module being made up of light emitting diode at present can produce high-power, high brightness
Light source.Therefore by widely, revolutionaryly replacing the existing light sources such as traditional incandescent lamp, become and meet energy-conserving and environment-protective theme
Principal light source.But, when manufacturing light emitting diode, it is that first LED wafer is cut into some light-emitting diodes mostly
Then these some LED wafer monomers are positioned on base plate, then use the side of single package by pipe wafer monomer one by one
LED wafer monomer is packaged into light emitting diode by formula, but this method for packing production efficiency is low, is difficulty with advising greatly
The automated production of mould, is unfavorable for reducing cost, largely hinders the universal of light emitting diode.
Generally, the emission wavelength of LED varies with temperature and is 0.2 ~ 0.3nm/ DEG C, and spectral width increases therewith, shadow
Ring bright-colored degree.It addition, when forward current flows through pn-junction, and heat generation loss makes interface produce temperature rise, near room temperature, temperature
Often raising 1 DEG C, the luminous intensity of LED can correspondingly reduce about 1%, package cooling；Time keep excitation non-with luminous intensity
The most important, use reduces its way driving electric current more, reduces junction temperature, and it is left that the driving electric current of most LED is limited in 20mA
Right.But, the light output of LED can increase with the increase of electric current, and at present, the driving electric current of a lot of power-type LEDs can reach
70mA, 100mA even 1A level, needs to improve encapsulating structure, brand-new LED encapsulation design concept and low thermal resistance encapsulating structure and skill
Art, improves thermal characteristics.Such as, use large-area chips inverted structure, select the elargol of good heat conductivity, increase metal rack
Surface area, the silicon carrier of solder bump is directly installed in heat sink first-class method.Additionally, in Application Design, the heat of PCB etc.
Design, heat conductivility the most particularly significant.
Entering after 21 century, the high efficiency of LED, super brightness, development is innovated, LED chip and encapsulate no longer edge
The design concept of Gong Chuantong and manufacture production model, increasing the light output facet of chip, and research and development are not limited only to change material
Interior amount of impurities, lattice defect and dislocation improve internal efficiency, meanwhile, how to improve tube core and encapsulation internal structure, strengthen
The internal probability producing photon outgoing of LED, raising light efficiency, solve heat radiation, take heavy optimization of light and heat and design, improve optical property,
Accelerate the main flow direction of surface mount SMD process industrial circle especially research and development.
Summary of the invention
The technical problem to be solved is that conventional light emitting diodes is short for service life, easily the problem of short circuit, purpose
It is to provide the production technology of a kind of LED light emitting diode, the production technology of further optimized emission diode, improves performance.
The present invention is achieved through the following technical solutions:
The production technology of a kind of LED light emitting diode, comprises the following steps:
(1) LED wafer is placed in the substrate of groove shapes, substrate is coated with conducting resinl；
(2) LED wafer is cut into some light-emitting diode chip for backlight unit being separated from each other, and adjacent light-emitting diodes
Form a gap between die, in the gap between adjacent light-emitting diode chip for backlight unit, put into insulating barrier；
(3) the first glue-line is covered on the led chips, place into the second glue-line and fill up the substrate of groove shapes；
(4) between light-emitting diode chip for backlight unit and substrate, have heat sink, heat sink has some heat dissipation channels, and dispels the heat
Passage is connected with the heat abstractor in substrate.
Put into groove surfaces have the base of conducting resinl by passing through the gold-plated diode wafer of diffusion, pickling, sintering, nickel plating
On plate, LED wafer is cut into some light-emitting diode chip for backlight unit being separated from each other, and adjacent light emitting diode
Forming a gap between chip, put into insulating barrier in the gap between adjacent light-emitting diode chip for backlight unit, insulating barrier cuts off
The adjacent conducting resinl between light-emitting diode chip for backlight unit, prevents the conducting particles in conducting resinl from running because being squeezed and sends out to adjacent
In gap between luminous diode chip so that can be because conducting particles contacts with each other between this adjacent light-emitting diode chip for backlight unit
And turn on, and then produce short circuit.Between light-emitting diode chip for backlight unit and substrate, there is heat sink, heat sink has some heat radiations
Passage, and heat dissipation channel is connected with the heat abstractor in substrate.
Further, give out light in diode powerful, during logical excessive current, substantial amounts of heat, common two poles can be produced
The heat dispersion of pipe is very poor, substantially reduces the service life of diode.Heat sink increases position on the downside of light-emitting diode chip for backlight unit
The heat dispersion put, louvre too increases the area of dissipation of light-emitting diode chip for backlight unit simultaneously, and, heat radiation is set in substrate
Device also saves raw material and spatial area.
A kind of production technology of LED light emitting diode, the conducting resinl in described step (1) be epoxy adhesive and
Conducting particles.
The production technology of a kind of LED light emitting diode, the first glue-line in described step (3) is fluorescent material, high light transmittance
Silica gel, epoxy resin one or more.
A kind of production technology of LED light emitting diode, the silica gel that the second glue-line is high light transmittance in described step (3) or
One or more in epoxy resin.
The production technology of a kind of LED light emitting diode, has fin in the heat abstractor in described step (4).
Wherein, epoxy resin adhesive, because its Performance comparision is comprehensive, Application comparison is extensive, so being referred to as " omnipotent
Glue ", synthetic adhesive occupies very important effect, is the outstanding person in adhesive, have the most excellent characteristic, as
Viscous glutinous intensity is high, resistant to chemical media, and compound method is simple, uses temperature range wide, and ageing-resistant performance is good, and toxic dosage is few, environment
Pollution is few.Epoxy resin adhesive all has extraordinary viscous glutinous effect to the kind material of a lot of different attributes.In addition,
Epoxy resin adhesive also has the functions such as sealing, insulation, wear-resisting, reinforcing, can be rated as performance the highest, the adhesive that function is the abundantest.
It may be said that the vestige of epoxy resin adhesive can be found in modern industry and daily life.
Further, conducting resinl generally with matrix resin and conductive filler i.e. conducting particles for mainly comprising composition, passes through
The bonding effect of matrix resin combines conducting particles, forms conductive path, it is achieved by being conductively connected of viscous material.By
Matrix resin in conducting resinl is a kind of adhesive, suitable solidification temperature can be selected to carry out bonding.
Fluorescent material, is generally divided into photo-induced energy storage luminescent powder and carries active luminescent powder two class.Photo-induced energy storage luminescent powder
It is fluorescent material after being irradiated by nature light, daylight light, ultraviolet light etc., luminous energy is stored, stopping after light irradiates, then
Discharging in the way of fluorescence lentamente, so at night or dark, remaining to see luminescence, the persistent period is up to several little
Up to tens hours.
Silica gel is a kind of high activity adsorbing material, belongs to amorphous substance.Water insoluble and any solvent, nonpoisonous and tasteless, change
Learn stable in properties, do not react with any material in addition to highly basic, Fluohydric acid..The silica gel of various models is different because of its manufacture method
And form different microcellular structures.The chemical composition of silica gel and physical arrangement, determine it and have other same type of material difficulties many
To replace to obtain feature: absorption property height, Heat stability is good, stable chemical nature, have higher mechanical strength etc..
The epoxy resin of top encapsulating is shaped, and has the most several effect: protection tube core etc. is not corroded by the external world；
Take different shapes and material character (mix or do not mix color dispersing agent), play lens or diffusing lens function, control the angle of divergence of light；
Tube core refractive index is relevant to air refraction too big, and the cirtical angle of total reflection causing die internal is the least, and its active layer produces
Light only has fraction to be removed, and major part is easily absorbed through multiple reflections at die internal, easily occurs total reflection to cause too much
Light loss, selects the epoxy resin of respective indices of refraction to make transition, improves the light outgoing efficiency of tube core.It is used as to constitute the epoxy of shell
Resin must have moisture-proof, insulating properties, mechanical strength, and refractive index and absorbance that tube core sends light are high.Select difference refraction
The encapsulating material of rate, package geometry on photon effusion efficiency impact be different, luminous intensity angular distribution also with pipe
Material used by cored structure, optical output mode, package lens is relevant with shape.According to pointed resin lens, light can be made to focus on
The axis direction of LED, corresponding visual angle is less；If the resin lens at top is circular or plane, its corresponding visual angle will increase
Greatly.
Fin is a kind of device dispelled the heat to the easy heat-generating electronic elements in electrical equipment, how by aluminium alloy, pyrite or bronze
Make tabular, lamellar, splintery etc..Conventional fin material is copper and aluminium alloy, and the two is respectively arranged with its pluses and minuses.The heat conduction of copper
Property is good, but expensive, and difficulty of processing is higher, and weight is excessive, and thermal capacity is less, and easily aoxidizes.And fine aluminium is too soft, it is impossible to
Directly use.
The present invention compared with prior art, has such advantages as and beneficial effect:
1, the production technology of a kind of LED of present invention light emitting diode, has insulating barrier, prevents short circuit between light-emitting diode chip for backlight unit.
2, the production technology of a kind of LED of present invention light emitting diode, has heat abstractor, increases the use of light emitting diode
Life-span.
3, the production technology of a kind of LED of present invention light emitting diode, heat abstractor is arranged in substrate, saves space and money
Source.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing being further appreciated by the embodiment of the present invention, constitutes of the application
Point, it is not intended that the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is present invention process figure.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with embodiment and accompanying drawing, to this
Invention is described in further detail, and the exemplary embodiment of the present invention and explanation thereof are only used for explaining the present invention, do not make
For limitation of the invention.
Embodiment
As it is shown in figure 1, the production technology of the present invention a kind of LED light emitting diode, comprise the following steps:
(1) LED wafer is placed in the substrate of groove shapes, substrate is coated with by epoxy adhesive and leads
The molecular conducting resinl of electrochondria；
(2) LED wafer is cut into some light-emitting diode chip for backlight unit being separated from each other, and adjacent light-emitting diodes
Form a gap between die, in the gap between adjacent light-emitting diode chip for backlight unit, put into insulating barrier；
(3) the first glue-line is covered on the led chips, place into the second glue-line and fill up the substrate of groove shapes；
(4) between light-emitting diode chip for backlight unit and substrate, have heat sink, heat sink has some heat dissipation channels, and dispels the heat
Passage is connected with the heat abstractor in substrate.And heat abstractor has fin.
Described first glue-line is fluorescent material, the silica gel of high light transmittance and the mixture of epoxy resin composition.
Described second glue-line is silica gel and the mixture of epoxy resin composition of high light transmittance.
Above-described detailed description of the invention, has been carried out the purpose of the present invention, technical scheme and beneficial effect further
Describe in detail, be it should be understood that the detailed description of the invention that the foregoing is only the present invention, be not intended to limit the present invention
Protection domain, all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, all should comprise
Within protection scope of the present invention.
Claims (5)
1. the production technology of a LED light emitting diode, it is characterised in that comprise the following steps:
(1) LED wafer is placed in the substrate of groove shapes, substrate is coated with conducting resinl；
(2) LED wafer is cut into some light-emitting diode chip for backlight unit being separated from each other, and adjacent light-emitting diodes
Form a gap between die, in the gap between adjacent light-emitting diode chip for backlight unit, put into insulating barrier；
(3) the first glue-line is covered on the led chips, place into the second glue-line and fill up the substrate of groove shapes；
(4) between light-emitting diode chip for backlight unit and substrate, have heat sink, heat sink has some heat dissipation channels, and dispels the heat
Passage is connected with the heat abstractor in substrate, and light-emitting diode chip for backlight unit is dispelled the heat by heat dissipation channel.
The production technology of a kind of LED light emitting diode the most according to claim 1, it is characterised in that in described step (1)
Conducting resinl be epoxy adhesive and conducting particles.
The production technology of a kind of LED light emitting diode the most according to claim 1, it is characterised in that in described step (3)
The first glue-line be fluorescent material, the silica gel of high light transmittance, epoxy resin one or more.
The production technology of a kind of LED light emitting diode the most according to claim 1, it is characterised in that in described step (3)
The silica gel that the second glue-line is high light transmittance or epoxy resin in one or more.
The production technology of a kind of LED light emitting diode the most according to claim 1, it is characterised in that in described step (4)
Heat abstractor in have fin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610692082.XA CN106229311B (en) | 2016-08-22 | 2016-08-22 | A kind of production technology of LED light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610692082.XA CN106229311B (en) | 2016-08-22 | 2016-08-22 | A kind of production technology of LED light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106229311A true CN106229311A (en) | 2016-12-14 |
| CN106229311B CN106229311B (en) | 2019-06-07 |
Family
ID=57553050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610692082.XA Active CN106229311B (en) | 2016-08-22 | 2016-08-22 | A kind of production technology of LED light emitting diode |
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| Country | Link |
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| CN (1) | CN106229311B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107911951A (en) * | 2017-11-22 | 2018-04-13 | 田国辉 | A kind of luminescent wafer fixes the method for packing of pcb board |
| CN112017550A (en) * | 2019-05-31 | 2020-12-01 | 云谷（固安）科技有限公司 | Display panel, manufacturing method thereof and display device |
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| CN101436637A (en) * | 2008-12-16 | 2009-05-20 | 王海军 | High-efficiency heat-dissipating luminous high-power LED packaging structure |
| CN101482230A (en) * | 2006-11-13 | 2009-07-15 | 弘元科技有限公司 | Structure with bearing substrate and manufacturing method thereof |
| CN102130111A (en) * | 2010-12-24 | 2011-07-20 | 郑伟 | Liquid-packaged high-power LED (light-emitting diode) device and packaging method of LED device |
| CN204118067U (en) * | 2014-07-25 | 2015-01-21 | 王伟奉 | Directly be packaged in the LED chip encapsulation architecture of radiator |
| CN204303868U (en) * | 2015-01-05 | 2015-04-29 | 福建天电光电有限公司 | Improve the light emitting semiconductor device of heat radiation and three-dimensional LED light source |
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2016
- 2016-08-22 CN CN201610692082.XA patent/CN106229311B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101482230A (en) * | 2006-11-13 | 2009-07-15 | 弘元科技有限公司 | Structure with bearing substrate and manufacturing method thereof |
| CN201081166Y (en) * | 2007-07-17 | 2008-07-02 | 华刚光电（上海）有限公司 | Multiple-channel heat radiating high power LED device |
| CN101436637A (en) * | 2008-12-16 | 2009-05-20 | 王海军 | High-efficiency heat-dissipating luminous high-power LED packaging structure |
| CN102130111A (en) * | 2010-12-24 | 2011-07-20 | 郑伟 | Liquid-packaged high-power LED (light-emitting diode) device and packaging method of LED device |
| CN204118067U (en) * | 2014-07-25 | 2015-01-21 | 王伟奉 | Directly be packaged in the LED chip encapsulation architecture of radiator |
| CN204303868U (en) * | 2015-01-05 | 2015-04-29 | 福建天电光电有限公司 | Improve the light emitting semiconductor device of heat radiation and three-dimensional LED light source |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107911951A (en) * | 2017-11-22 | 2018-04-13 | 田国辉 | A kind of luminescent wafer fixes the method for packing of pcb board |
| CN112017550A (en) * | 2019-05-31 | 2020-12-01 | 云谷（固安）科技有限公司 | Display panel, manufacturing method thereof and display device |
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| Publication number | Publication date |
|---|---|
| CN106229311B (en) | 2019-06-07 |
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